CN210626707U - End face coupler - Google Patents
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- CN210626707U CN210626707U CN201922006665.4U CN201922006665U CN210626707U CN 210626707 U CN210626707 U CN 210626707U CN 201922006665 U CN201922006665 U CN 201922006665U CN 210626707 U CN210626707 U CN 210626707U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
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Abstract
The utility model relates to the field of photoelectric devices, in particular to an end face coupler, which comprises an SOI substrate, a buried oxide layer and a coupler, wherein the SOI substrate comprises a silicon substrate and the buried oxide layer arranged on the silicon substrate; the silicon oxide layer is arranged on one side of the oxygen buried layer opposite to the silicon substrate; a first waveguide, which is located on the side of the end-face coupler from which the quasi-coupled wave is introduced, for confining the quasi-coupled wave within a mode field of a predetermined size; the silicon-based optical waveguide is positioned on one side where the quasi-coupled wave of the end face coupler is transmitted out; and a second waveguide for coupling the quasi-coupled wave confined in the predetermined mode by the first waveguide into the silicon-based optical waveguide; and the first waveguide, the second waveguide and the silicon-based optical waveguide are all positioned in the silicon oxide layer. The utility model provides an end face coupler has with the optical fiber coupling efficient, the bandwidth is big, the technology degree of difficulty and the lower advantage of cost.
Description
Technical Field
The utility model relates to a photoelectric device field, concretely relates to end face coupler.
Background
With the rapid development of communication technology, under the background of big data era, data traffic is rapidly increased, the requirement on bandwidth is higher and higher, the limitations of traditional electrical interconnection in the aspects of bandwidth, distance, energy consumption and the like are more and more prominent, and the development requirements of high-speed communication and high-performance microelectronic chips are difficult to meet. Silicon-based optoelectronic interconnects, as one of the most promising solutions today, have become an ongoing focus of research.
The silicon-based photonic device has the remarkable advantages of compatibility with a Complementary Metal Oxide Semiconductor (CMOS) process, large bandwidth, low delay, low energy consumption, low crosstalk and the like, and can realize on-chip optical interconnection with high performance, low cost, small size and high integration. For a silicon-based photonic chip, a problem to be solved is to realize efficient coupling connection between an optical signal inside the chip and an optical signal outside the chip.
Because silicon and silicon dioxide or air have great refractive index difference, the silicon-based optical waveguide has strong capacity of limiting an optical field, the size of the silicon-based optical waveguide can be made into a very small size, the cross-sectional size of the silicon-based optical waveguide is usually less than 0.5 micron, the core diameter of a common single-mode optical fiber is about 8-10 microns, the size difference between the silicon-based optical waveguide and the common single-mode optical fiber is great, and serious mode field mismatch is caused, so that great coupling loss is caused.
Therefore, the design of the end face coupler capable of increasing the mode field matching degree between the silicon-based optical waveguide and the single-mode optical fiber so as to improve the coupling efficiency is of great significance to the silicon-based photoelectric interconnection technology.
SUMMERY OF THE UTILITY MODEL
Therefore, the to-be-solved technical problem of the present invention is to overcome the defect of large coupling loss between the silica-based optical waveguide and the single-mode optical fiber in the prior art, thereby providing an end-face coupler.
In order to solve the technical problem, the utility model discloses a technical scheme does:
an end-face coupler comprising:
the SOI substrate comprises a silicon substrate and a buried oxide layer arranged on the silicon substrate;
the silicon oxide layer is arranged on one side of the buried oxide layer opposite to the silicon substrate;
a first waveguide, located on a side of the end-face coupler from which a quasi-coupled wave is introduced, for confining the quasi-coupled wave within a mode field of a predetermined size;
the silicon-based optical waveguide is positioned on one side where the quasi-coupled wave of the end face coupler is transmitted out;
and a second waveguide for coupling a quasi-coupled wave confined in a predetermined mode by the first waveguide into the silicon-based optical waveguide;
and the first waveguide, the second waveguide and the silicon-based optical waveguide are all positioned inside the silicon oxide layer.
Furthermore, the first waveguide comprises a plurality of enclosing waveguides, the enclosing waveguides are matched to enclose a cylinder or a cube, the extending direction of the cylinder or the cube is consistent with the outgoing direction of the quasi-coupled wave, the second waveguide is arranged in the cylinder or the cube, and the extending direction of the second waveguide is consistent with the outgoing direction of the quasi-coupled wave.
Further, the first waveguide further comprises a central waveguide, the plurality of enclosing waveguides are arranged around the central waveguide, and in the outgoing direction of the quasi-coupled wave, the central axis of the central waveguide coincides with the central axis of the cylinder or the cube.
Further, along the outgoing direction of the quasi-coupled wave, the second waveguide is disposed at the end of the central waveguide, and along the outgoing direction of the quasi-coupled wave, the central axis of the second waveguide coincides with the central axis of the cylinder or the cube.
Furthermore, the plurality of enclosed waveguides are uniformly distributed on the same cylindrical surface.
Further, the first waveguide and the second waveguide are silicon nitride waveguides.
Further, the length of the second waveguide is one half of the length of the end-face coupler.
Further, along the outgoing direction of the wave to be coupled, the second waveguide comprises a waveguide increasing section and a waveguide tapering section.
Further, the waveguide increment occupies half of the length of the second waveguide.
Further, the silicon-based optical waveguide is close to the waveguide tapered section.
Further, the length of the silicon-based optical waveguide accounts for one fourth of the length of the end face coupler.
Further, the silicon-based optical waveguide gradually increases along the outgoing direction of the quasi-coupled wave.
The utility model discloses technical scheme has following advantage:
1. the utility model provides an end face coupler, through set up first waveguide, silica-based optical waveguide and second waveguide in the silica layer, the light that single mode fiber spreads into in the end face coupler back, light reveals outside first waveguide and carries out the mode field distribution along first waveguide, first waveguide is used for prescribing a limit to the coupled wave in the mode field of predetermined size, the mode field of this predetermined size is unanimous with the mode field of the single mode fiber that the end face coupler needs the coupling, then light carries out the secondary coupling by the second waveguide and spreads to silica-based optical waveguide in, the mode field size of silica-based optical waveguide is unanimous with the mode field size of the silica-based photon chip that needs the coupling, through the setting of first waveguide, when making single mode fiber and end face coupler coupling, the mode spot size of single mode fiber and the quasi-coupled wave of end face coupler transmit the side is close, thereby can improve the coupling efficiency between single mode fiber and the end face coupler, coupling loss is reduced, and the silicon-based optical waveguide is arranged, so that when the silicon-based photonic chip is coupled with the end face coupler, the size of a mode spot of the silicon-based photonic chip is close to that of a mode spot of a quasi-coupling wave outgoing side of the end face coupler, the coupling efficiency between the silicon-based photonic chip and the end face coupler can be improved, the coupling efficiency between the single-mode optical fiber and the silicon-based photonic chip can be improved, and the coupling loss is reduced.
2. The utility model provides an end face coupler, the spot that single mode fiber formed is circular, through setting up first waveguide to including a plurality of enclosure waveguide, and a plurality of enclosure waveguide cooperation formation cylinders or square to make the spot shape that first waveguide coupling light formed more unanimous with single mode fiber's spot shape, and then improve single mode fiber and end face coupler's spot matching degree, improve coupling efficiency.
3. The utility model provides an end face coupler, the energy of mode field is all concentrated at its central point and is put, through setting up first waveguide to including central waveguide and enclose the waveguide that closes for first waveguide can absorb the energy of the wave of simulating the coupling as much as possible, thereby reduces the quantity that encloses the waveguide that needs set up.
4. The utility model provides an end face coupler is through setting up the second waveguide at the end of central waveguide for the light that the second waveguide can spread to first waveguide better carries out the coupling.
5. The utility model provides an end face coupler closes waveguide evenly distributed on same face of cylinder through enclosing for on guaranteeing to realize first silicon nitride waveguide and single mode fiber coupling's basis, the reduction that can be as few as possible encloses the quantity that closes the waveguide, thereby reduces end face coupler's the processing technology degree of difficulty, is favorable to end face coupler's production popularization.
6. The utility model provides an end face coupler forms first waveguide and second waveguide through chooseing for use silicon nitride, silicon nitride's refracting index is near 2.0, compare silicon, silicon nitride is less with the refracting index contrast of silicon oxide, the silicon nitride waveguide size that can make is great, thereby can reduce the coupling loss between silica-based optical waveguide and the single mode fiber, in addition, silicon nitride has lower transmission loss, adopt silicon nitride preparation silicon nitride waveguide, can reduce the transmission loss between silica-based optical waveguide and the single mode fiber.
7. The utility model provides an end face coupler sets up to including waveguide gradual increase section and waveguide gradual change section through with the second waveguide in the direction is spread to the coupled wave along wanting for the second waveguide forms taper (gradual change) form, thereby makes the second waveguide can with the light that spreads through first waveguide as much as possible couple to silicon-based optical waveguide in, thereby further improves coupling efficiency, reduces the coupling loss.
8. The utility model provides an end face coupler is through the specification and shape, the size of injecing each waveguide for the process compatibility of each waveguide is better, and is high to process error's tolerance, so can reduce its requirement to processing device, thereby reduces the manufacturing cost of end face coupling structure.
9. The utility model provides a preparation method of end face coupler only includes steps such as deposit sculpture, and preparation method is simple, is favorable to end face coupler's mass production.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an end-face coupler according to embodiment 1 of the present invention;
fig. 2 is a cross-sectional view of the end-face coupler in embodiment 1 of the present invention, taken along the vertical direction;
fig. 3 is a front view of an end face coupler according to embodiment 1 of the present invention
Fig. 4 is a plan view of an end-face coupler according to embodiment 1 of the present invention;
reference numerals:
1. an SOI substrate; 11. a silicon substrate; 12. an oxygen burying layer; 2. a silicon oxide layer; 3. a first waveguide; 31. enclosing the waveguide; 32. a central waveguide; 4. a silicon-based optical waveguide; 5. a second waveguide.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the following embodiments are provided for better understanding of the present invention, not limited to the best mode, and not for the limitation of the content and the protection scope of the present invention, and any product identical or similar to the present invention, obtained by combining the features of the present invention with other prior art, or any product in the teaching of the present invention, falls within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
The examples do not show the specific experimental steps or conditions, and can be performed according to the conventional experimental steps described in the literature in the field. The reagents or instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
Example 1
With reference to fig. 1-4, the present embodiment relates to an end-face coupler comprising an SOI substrate 1, a silicon oxide layer 2, a first waveguide 3, a second waveguide 5, and a silicon-based optical waveguide 4.
The silicon oxide layer 2 is arranged on the SOI substrate 1, the first waveguide 3, the second waveguide 5 and the silicon-based optical waveguide 4 are arranged in the silicon oxide layer 2, the first waveguide 3 is located on one side, where a quasi-coupled wave of the end-face coupler is introduced, of the end-face coupler, the first waveguide 3 is used for limiting the quasi-coupled wave in a mode with a preset size, the silicon-based optical waveguide 4 is located on one side, where the quasi-coupled wave of the end-face coupler is discharged, the second waveguide 5 is used for coupling the quasi-coupled wave limited in the preset mode by the first waveguide 3 into the silicon-based optical waveguide 4, specifically, in this embodiment, the first waveguide 3 is used for coupling with a single-mode optical fiber with the size of 8mm, and the silicon-based optical waveguide 4 is used for.
The SOI substrate 1 is a substrate used for a common Silicon-based device, and is fully called a Silicon-On-Insulator, and includes a Silicon substrate 11 and a buried oxide layer 12 disposed On the Silicon substrate 11, where the thickness of the buried oxide layer 12 is 3 μm, it should be noted that the complete SOI substrate 1 further includes a top Silicon disposed On the buried oxide layer 12, the thickness of the top Silicon is usually 220nm, but when an end-face coupler is manufactured, in order to prevent light from being drawn into the top Silicon, the top Silicon is removed to leak out the buried oxide layer 12, and then corresponding processing is performed On the buried oxide layer 12. A silicon oxide layer 2 is disposed on the side of the buried oxide layer 12 opposite the silicon substrate.
The first waveguide 3 includes a plurality of enclosed waveguides 31, in this embodiment, the enclosed waveguides 31 cooperate to form a cylinder whose extending direction is the same as the outgoing direction of the quasi-coupled wave, in other embodiments, the enclosed waveguides 31 may also be a cube or other shape that can cover the mode spot of the single mode fiber, only because the mode spot is circular, the enclosed waveguides 31 enclose into the cylinder, so that the mode spot formed by the first waveguide 3 can be more matched with the mode spot of the single mode fiber, thereby reducing the number of the enclosed waveguides 31 as much as possible on the basis of covering the mode spot of the single mode fiber, and further reducing the processing difficulty of the end-face coupler. The second waveguide 5 is arranged in the shape enclosed by the enclosing waveguide 31, and the extending direction of the second waveguide 5 is consistent with the outgoing direction of the wave to be coupled.
To further reduce the number of enclosing waveguides 31 required to be used, the first waveguide 3 may be configured to further include a central waveguide 32, wherein the enclosing waveguides 31 are disposed around the central waveguide 32, and in the outgoing direction of the quasi-coupled wave, the central axis of the central waveguide 32 coincides with the central axis of the cylinder or cube enclosed by the enclosing waveguides 31. Because the energy of the mode field is basically concentrated in the middle of the mode field, the central waveguide 32 can be used for absorbing the energy of the mode field as much as possible, so that the number of the enclosing waveguides 31 required to be used can be reduced, and the process difficulty is reduced. Meanwhile, to achieve the above purpose, the enclosing waveguides 31 may be disposed to be uniformly distributed along the central waveguide 32.
In this embodiment, the enclosing waveguides 31 are uniformly distributed on the same cylindrical surface around the central waveguide 32, specifically, three waveguide layers are disposed in the silicon oxide layer 2, and are arranged from a side close to the SOI substrate 1 to a side far from the SOI substrate 1, which are sequentially a first waveguide layer, a second waveguide layer, and a third waveguide layer, and the distances between the waveguide layers are the same, where the first waveguide layer and the third waveguide layer both include one enclosing waveguide 31, and the second waveguide layer includes two enclosing waveguides 31 and one central waveguide 32. When the whole end-face coupler is overlooked from top to bottom, the enclosing waveguides 31 in the first waveguide layer and the third waveguide layer are completely overlapped with the central waveguide 32, and the two enclosing waveguides 31 in the second waveguide layer are symmetrically distributed around the central waveguide 32. That is, in the present embodiment, the central waveguide 32 is located on the central axis of the cylinder, and the four enclosing waveguides 31 are located on the four quarter lines of the side surfaces of the cylinder, respectively.
In order to make the second waveguide 5 couple as much light as possible from the first waveguide 3 to the silica-based optical waveguide 4, thereby further improving the coupling efficiency between the silica-based optical chip and the single-mode optical fiber, in the present embodiment, the second waveguide 5 is disposed at the end of the central waveguide 32, and the central axis of the second waveguide 5 coincides with the central axis of the cylinder surrounded by the enclosing waveguides 31 along the outgoing direction of the wave to be coupled. In addition, the second waveguide 5 is arranged to include a waveguide increasing section and a waveguide decreasing section along the outgoing direction of the wave to be coupled, that is, the second waveguide 5 is arranged to be of a taper type, which is commonly referred to as a mode gradual change type. In the present embodiment, the second waveguide 5 is gradually changed in the horizontal direction, and when the whole end-face coupler is overlooked from top to bottom, the surface shape of the second waveguide 5 is approximately a rhombus. In addition, the above object can be also achieved by setting the length of the enclosing waveguide 31 on the second waveguide layer to be equal to the sum of the lengths of the second waveguide 5 and the central waveguide 32.
In order to make the silicon-based optical waveguide 4 better receive light from the second waveguide 5, the silicon-based optical waveguide 4 is arranged to be located between the first waveguide layer and the second waveguide layer, and the silicon-based optical waveguide 4 is close to the waveguide tapered section of the second waveguide 5. The length of the silicon-based optical waveguide 4 accounts for one fourth of the length of the end face coupler, the shape of the silicon-based optical waveguide 4 is also a taper type, but the silicon-based optical waveguide 4 is gradually increased along the outgoing direction of the intended coupling. In this embodiment, the silicon-based optical waveguide 4 abuts against the second waveguide 5, the silicon-based optical waveguide 4 is also gradually changed in the horizontal direction, and when the entire end-face coupler is viewed from the top down, the shape of the silicon-based optical waveguide 4 is an isosceles trapezoid.
In this embodiment, the first waveguide 3 and the second waveguide 5 are both silicon nitride waveguides, the first waveguide 3 and the second waveguide 5 are formed by selecting silicon nitride, the refractive index of the silicon nitride is near 2.0, the refractive index contrast of the silicon nitride and silicon oxide is smaller compared with silicon, and the size of the silicon nitride waveguide which can be manufactured is larger, so that the coupling loss between the silicon-based optical waveguide 4 and the single-mode optical fiber can be reduced, in addition, the silicon nitride has lower transmission loss, and the transmission loss between the silicon-based optical waveguide 4 and the single-mode optical fiber can be reduced by preparing the silicon nitride waveguide by using the silicon nitride.
In order to make the process compatibility of the end-face coupler better, in this embodiment, the length of the end-face coupler is 1200 micrometers, the central waveguide 32 and the enclosing waveguide 31 are both configured as strips, and as viewed in the outgoing direction of the wave to be coupled, the thicknesses of the enclosing waveguides 31 and the central waveguide 32 in the first waveguide layer and the third waveguide layer are both 0.2 micrometers and 0.34 micrometers, wherein the lengths of the enclosing waveguides 31 and the central waveguide 32 in the first waveguide layer and the third waveguide layer are both 600 micrometers, the length of the enclosing waveguide 31 on the second waveguide layer is 1200 micrometers, the thickness of the second waveguide 5 is 0.2 micrometers, the width gradually increases from 0.34 micrometers to 1 micrometer, and then gradually decreases to 0.34 micrometers and 600 micrometers, the thickness of the silicon-based optical waveguide 4 is 0.22 micrometers, the width of the narrow end thereof is 200 nanometers, the width of the wide end thereof is 0.45 micrometers, and the length is 300 micrometers.
The end-face coupler of this example was prepared as follows:
s1, cleaning the SOI substrate, then etching the top silicon layer to be clean, and waiting for the subsequent growth of silicon nitride;
s2, depositing a first layer of silicon nitride in a large area by adopting an LPCVD (Low Pressure Chemical vapor deposition) technology, then spin-coating a photoresist on the first layer of silicon nitride, masking a surrounding waveguide area in the first waveguide layer by using the photoresist by adopting a photoetching technology, then carrying out dry etching, completely etching the large area of silicon nitride, removing the photoresist, and cleaning the surface of a sample;
s3, depositing silicon oxide on the first waveguide layer in large area by PECVD (plasma enhanced Chemical Vapor Deposition), and then Polishing the material surface by CMP (Chemical Mechanical Polishing);
s4, depositing silicon on the silicon oxide layer in a large area by adopting an LPCVD technology, then spin-coating photoresist on the silicon, masking the silicon-based optical waveguide area by adopting a photoetching technology, then carrying out dry etching, completely etching the silicon in a large area, removing the photoresist, and cleaning the surface of a sample;
s5, depositing silicon oxide on the silicon-based optical waveguide in a large area by adopting a PECVD (plasma enhanced chemical vapor deposition) technology, and then grinding the surface of the material to be flat by adopting a CMP (chemical mechanical polishing) method;
s6, depositing a second layer of silicon nitride on the silicon oxide layer in the step S5 in a large area by adopting an LPCVD (low pressure chemical vapor deposition) technology, then spin-coating photoresist on the second layer of silicon nitride, masking the area where the first waveguide is located and the area where the second waveguide is located in the second waveguide layer by adopting a photoetching technology, then carrying out dry etching, completely etching the large area of silicon nitride, removing the photoresist, and cleaning the surface of a sample;
s7, depositing silicon oxide on the second waveguide layer in a large area by adopting a PECVD (plasma enhanced chemical vapor deposition) technology, and then grinding the surface of the material to be flat by adopting a CMP (chemical mechanical polishing) method;
s8, depositing a third layer of silicon nitride on the silicon oxide layer in the step S7 in a large area by adopting an LPCVD (low pressure chemical vapor deposition) technology, then spin-coating photoresist on the third layer of silicon nitride, masking a surrounding waveguide area in a third waveguide layer by using the photoresist by adopting a photoetching technology, then carrying out dry etching, completely etching the large area of silicon nitride, removing the photoresist, and cleaning the surface of a sample;
s9, depositing silicon oxide on the product obtained in S8 in a large area by adopting a PECVD (plasma enhanced chemical vapor deposition) technology, and then etching a 100-micron deep groove convenient for optical fiber coupling near the front end of the first silicon nitride waveguide to finish the preparation of the end-face coupler.
The principle of use of the end-face coupler of the present embodiment is generally as follows:
by arranging the first waveguide 3, the silicon-based optical waveguide 4 and the second waveguide 5 in the silicon oxide layer 2, after light transmitted by a single-mode optical fiber is transmitted into the end-face coupler, the light leaks out of the first waveguide 3 and is distributed along the first waveguide 3 in a mode field mode, the first waveguide 3 is used for limiting a quasi-coupled wave in a mode field with a preset size, the mode field with the preset size is consistent with the mode field of the single-mode optical fiber to be coupled of the end-face coupler, then the light is secondarily coupled by the second waveguide 5 and is transmitted into the silicon-based optical waveguide 4, the size of the mode field of the silicon-based optical waveguide 4 is consistent with that of a silicon-based photonic chip to be coupled, when the single-mode optical fiber is coupled with the end-face coupler, the size of the mode spot of the single-mode optical fiber is close to that of the quasi-coupled wave of the end-face coupler at the transmission side, so that the coupling efficiency between the, coupling loss is reduced, and the silicon-based optical waveguide 4 is arranged, so that when the silicon-based photonic chip is coupled with the end face coupler, the size of a mode spot of the silicon-based photonic chip is close to that of a mode spot of a quasi-coupling wave outgoing side of the end face coupler, the coupling efficiency between the silicon-based photonic chip and the end face coupler can be improved, the coupling efficiency between the single-mode optical fiber and the silicon-based photonic chip can be improved, and the coupling loss is reduced.
When the end face coupler is coupled with SMF28 and an optical fiber with 8.2 mu m of mode spot diameter, the coupling efficiency is 84 percent, and the coupling loss is less than 0.5 dB.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications can be made without departing from the scope of the invention.
Claims (12)
1. An end-face coupler, comprising:
an SOI substrate (1) comprising a silicon substrate (11) and a buried oxide layer (12) disposed on the silicon substrate (11);
a silicon oxide layer (2) arranged on the side of the buried oxide layer (12) opposite to the silicon substrate (11);
a first waveguide (3) located on a side of the end-face coupler from which a quasi-coupled wave is introduced, for confining the quasi-coupled wave within a mode field of a predetermined magnitude;
the silicon-based optical waveguide (4) is positioned on one side from which the end face coupler quasi-coupled wave is transmitted;
and a second waveguide (5) for coupling a wave to be coupled, confined within a predetermined mode by the first waveguide (3), into the silica-based optical waveguide (4);
wherein the first waveguide (3), the second waveguide (5) and the silicon-based optical waveguide (4) are all positioned inside the silicon oxide layer (2).
2. An end-face coupler according to claim 1, characterized in that the first waveguide (3) comprises a plurality of enclosing waveguides (31), the enclosing waveguides (31) cooperate to enclose a cylinder or a cube having an extension direction coinciding with the outgoing direction of the wave to be coupled, and the second waveguide (5) is arranged in the cylinder or the cube and has an extension direction coinciding with the outgoing direction of the wave to be coupled.
3. An end-face coupler according to claim 2, characterized in that the first waveguide (3) further comprises a central waveguide (32), the several enclosing waveguides (31) being arranged around the central waveguide (32) and the central axis of the central waveguide (32) coinciding with the central axis of the cylinder or cube in the outgoing direction of the wave to be coupled.
4. An end-face coupler according to claim 3, characterized in that the second waveguide (5) is arranged at the end of the central waveguide (32) in the outgoing direction of the quasi-coupled wave, and the central axis of the second waveguide (5) coincides with the central axis of the cylinder or cube in the outgoing direction of the quasi-coupled wave.
5. An end-face coupler according to claim 3 or 4, characterized in that the several enclosing waveguides (31) are evenly distributed on the same cylindrical surface.
6. An end-face coupler according to claim 5, characterized in that the first waveguide (3), the second waveguide (5) are silicon nitride waveguides.
7. An end-face coupler according to claim 2, 3, 4 or 6, characterized in that the length of the second waveguide (5) is half the length of the end-face coupler.
8. An end-face coupler according to claim 2, 3, 4 or 6, characterized in that the second waveguide (5) comprises, in the outgoing direction of the wave to be coupled, a waveguide increasing section and a waveguide tapering section.
9. The end-face coupler of claim 8, wherein the waveguide increment occupies one half of the length of the second waveguide (5).
10. An end-face coupler according to claim 8, characterized in that the silicon-based optical waveguide (4) is adjacent to the waveguide tapered section.
11. An end-face coupler according to claim 1 or 10, characterized in that the length of the silicon-based optical waveguide (4) is a quarter of the length of the end-face coupler.
12. An end-face coupler according to claim 1 or 10, characterized in that the silicon-based optical waveguide (4) is tapered in the outgoing direction of the wave to be coupled.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922006665.4U CN210626707U (en) | 2019-11-19 | 2019-11-19 | End face coupler |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201922006665.4U CN210626707U (en) | 2019-11-19 | 2019-11-19 | End face coupler |
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| CN210626707U true CN210626707U (en) | 2020-05-26 |
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| CN201922006665.4U Withdrawn - After Issue CN210626707U (en) | 2019-11-19 | 2019-11-19 | End face coupler |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110658586A (en) * | 2019-11-19 | 2020-01-07 | 华进半导体封装先导技术研发中心有限公司 | End face coupler and preparation method thereof |
| CN115220149A (en) * | 2021-04-20 | 2022-10-21 | 北京邮电大学 | End face coupler |
| US11567262B2 (en) | 2021-01-29 | 2023-01-31 | Cisco Technology, Inc. | End-face coupling structures underneath a photonic layer |
| US20230314708A1 (en) * | 2022-04-05 | 2023-10-05 | Globalfoundries U.S. Inc. | Stacked edge couplers in the back-end-of-line stack of a photonic chip |
-
2019
- 2019-11-19 CN CN201922006665.4U patent/CN210626707U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110658586A (en) * | 2019-11-19 | 2020-01-07 | 华进半导体封装先导技术研发中心有限公司 | End face coupler and preparation method thereof |
| CN110658586B (en) * | 2019-11-19 | 2024-01-26 | 华进半导体封装先导技术研发中心有限公司 | End face coupler and preparation method thereof |
| US11567262B2 (en) | 2021-01-29 | 2023-01-31 | Cisco Technology, Inc. | End-face coupling structures underneath a photonic layer |
| CN115220149A (en) * | 2021-04-20 | 2022-10-21 | 北京邮电大学 | End face coupler |
| CN115220149B (en) * | 2021-04-20 | 2024-04-12 | 北京邮电大学 | End face coupler |
| US20230314708A1 (en) * | 2022-04-05 | 2023-10-05 | Globalfoundries U.S. Inc. | Stacked edge couplers in the back-end-of-line stack of a photonic chip |
| US11947168B2 (en) * | 2022-04-05 | 2024-04-02 | Globalfoundries U.S. Inc. | Stacked edge couplers in the back-end-of-line stack of a photonic chip |
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