CN207281327U - A kind of Optical Waveguide Modes spot-size converter - Google Patents

A kind of Optical Waveguide Modes spot-size converter Download PDF

Info

Publication number
CN207281327U
CN207281327U CN201720981382.XU CN201720981382U CN207281327U CN 207281327 U CN207281327 U CN 207281327U CN 201720981382 U CN201720981382 U CN 201720981382U CN 207281327 U CN207281327 U CN 207281327U
Authority
CN
China
Prior art keywords
fiber waveguide
fiber
waveguide
size converter
cladding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201720981382.XU
Other languages
Chinese (zh)
Inventor
刘柳
秦子翔
阮子良
刘宇轩
陈伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Easy Cable Micro Power Technology Co Ltd
Original Assignee
Suzhou Easy Cable Micro Power Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Easy Cable Micro Power Technology Co Ltd filed Critical Suzhou Easy Cable Micro Power Technology Co Ltd
Priority to CN201720981382.XU priority Critical patent/CN207281327U/en
Application granted granted Critical
Publication of CN207281327U publication Critical patent/CN207281327U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Optical Couplings Of Light Guides (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The utility model discloses a kind of Optical Waveguide Modes spot-size converter, including top covering, intermediate cladding layer, insulator layer, substrate, the first fiber waveguide and the second fiber waveguide, the insulator layer is placed on the substrate, and intermediate cladding layer, top covering are set gradually on the insulator layer;First fiber waveguide is placed between intermediate cladding layer and the insulator layer, and second fiber waveguide is placed between the top covering and the intermediate cladding layer;First fiber waveguide and the second fiber waveguide is oppositely arranged, and the first fiber waveguide and the opposite side of the second fiber waveguide are tapered;Second fiber waveguide and the opposite side of the first fiber waveguide are also tapered end, and the mould field in the mould field and single mode optical fiber at its tip matches;First fiber waveguide and the opposite side of the second fiber waveguide are rectangle.The utility model can realize that silicon nano optical wave guide directly carries out end face with general single mode fiber and is connected, without using tapered lens fiber, reduce light from general single mode fiber into waveguide communication process from the radiation loss of silicon substrate, improve and single-mode fiber mode spot matching degree, the coupling efficiency of light is improved, is integrated easy to extensive light path.

Description

A kind of Optical Waveguide Modes spot-size converter
Technical field
It the utility model is related to optic communication and light network technical field, and in particular to a kind of Optical Waveguide Modes spot-size converter, is used In the interface problem for solving silicon based photon chip and optical fiber.
Background technology
With the fast development of the communication technology, under the background in big data epoch, data traffic sharp increase, to bandwidth It is required that it is increasing, and traditional electrical interconnection is also more and more prominent in the limitation of bandwidth, distance, energy consumption etc., it is difficult To meet the growth requirement of high-speed communication and high-performance microelectronics chip.In recent years, with emerging silicon based photon integrated chip Technology constantly develops rapidly, realizes that the short distance light network such as chip and chip chamber becomes using large-scale integrated photon chip May.
Since silicon based photon device has, big bandwidth compatible with CMOS technology, low latency, low energy The advantages of consumption, low crosstalk etc. are notable, it is possible to achieve high-performance, low cost, small size, highly integrated on piece optical interconnection.And for For silicon based photon chip, a urgent problem to be solved is the efficient of the optical signal outside the optical signal and piece realized in chip slapper It is of coupled connections.Since silicon and silica or air have very big refringence, silicon substrate fiber waveguide has very strong limitation The ability of light field, the usual very little of size of silicon substrate fiber waveguide, its sectional dimension is less than 0.5 micron, and the core of general single mode fiber Footpath is about 8-10 microns, both differ greatly at size, causes serious model field unbalance, so as to cause very big coupling loss. In order to realize the efficient coupling of the waveguide of optical fiber and small size, it would be desirable to certain moduli spot-size converter is designed on chip, To realize that mould field matches, coupling efficiency is improved.
Spot-size converter has end coupling and grating coupling two ways.Grating coupling is by making light in silicon waveguide Grid structure, when light incides grating coupler surface from optical fiber, since Bragg diffraction effect is realized with being put above chip Optical fiber effectively coupled.This mode can improve the alignment tolerance of optical fiber and coupler, but coupling efficiency it is relatively low and Wavelength sensitive, is unfavorable for encapsulating, is used to test chip more.And end coupling causes optical signal directly in the transversal of silica-based waveguides Face and the cross section of optical fiber are directly coupled.The advantages of end coupling device, is that coupling efficiency is higher, and can not change It is aligned in the case of light path.
Therefore, design that a kind of packaging technology is simple, the high silicon substrate spot-size converter of coupling efficiency is extremely important and intentional Justice.
Utility model content
1st, purpose of utility model.
The utility model aims to solve the mould spot transformational structure for being conventionally used to end coupling, solution need to use tapered lens light The problem of fine and coupling efficiency is relatively low, there is provided a kind of Optical Waveguide Modes spot-size converter that can be directly docked with general single mode fiber, And preparation method thereof.
2nd, technical solution used by the utility model.
The utility model proposes a kind of Optical Waveguide Modes spot-size converter, including:Top covering, intermediate cladding layer, insulator layer, lining Bottom, the first fiber waveguide and the second fiber waveguide, the insulator layer are placed on the substrate, are set successively on the insulator layer Put intermediate cladding layer, top covering;First fiber waveguide is placed between intermediate cladding layer and the insulator layer, second fiber waveguide It is placed between the top covering and the intermediate cladding layer;First fiber waveguide and the second fiber waveguide is oppositely arranged, the first light Waveguide and the opposite side of the second fiber waveguide are tapered;Second fiber waveguide is also cone with the opposite side of the first fiber waveguide Type end, the mould field in the mould field and single mode optical fiber at its tip match;First fiber waveguide and the second fiber waveguide are opposite Side is rectangle.
Further, the tapered tip of the first fiber waveguide is not provided with setting groove on the substrate of the first fiber waveguide, leads to Cross after intermediate cladding layer is filled into plane and make the second fiber waveguide.
Further, the top covering thickness is between 10-25um.
Further, the first fiber waveguide thickness is in below 500nm.
Further, the intermediate cladding layer thickness is in below 500nm.
Further, the second fiber waveguide thickness is in below 600nm.
Further, the insulator layer thickness is between 1-5um.
Further, the depth of groove is between 10-15um.
Further, first fiber waveguide is silicon.
Further, second fiber waveguide is silicon nitride.
Further, the top covering is silica.
Further, the intermediate cladding layer is silica.
Further, the insulator layer is silica.
Further, the substrate is silicon.
The production method of above-mentioned spot-size converter, including step:
(1) in the silicon base on insulator layer, collected using beamwriter lithography or deep UV lithography and dry etching etc. The first fiber waveguide is made into microelectronic technique;
(2) after the tip of the first fiber waveguide, collected using beamwriter lithography or deep UV lithography and dry etching etc. Groove is made into microelectronic technique;
(3) depositing inter-layer silica is filled groove, and uses cmp method, to whole chip It is planarized, and controls the thickness of intermediate layer silica;
(4) one layer of silicon nitride is being deposited obtained by step (3) on chip;
(5) the integrated micro technique such as beamwriter lithography or deep UV lithography and dry etching is used, in silicon nitride layer The second fiber waveguide of upper making;
(6) top covering silica is being deposited obtained by step (5) on chip.
3rd, technique effect caused by the utility model.
(1) the utility model is by using twin-guide tapered structure so that Optical Waveguide Modes spot-size converter can be with common list Mode fiber directly carries out end face connection, without using the tapered lens fiber of tradition.
(2) the utility model reduces light and is damaged from general single mode fiber into waveguide communication process from the radiation of silicon substrate Consumption, improve with single-mode fiber mode spot matching degree, improve the coupling efficiency of light, integrated easy to extensive light path.
Brief description of the drawings
Fig. 1 is the structure diagram of the utility model Optical Waveguide Modes spot converter.To clearly show that waveguiding structure, in omission Covering.
Fig. 2 is the utility model preparation method step 1 gained intermediate structure front schematic view.
Fig. 3 is the utility model preparation method step 1 gained intermediate structure schematic top plan view.
Fig. 4 is the utility model preparation method step 2 gained intermediate structure front schematic view.
Fig. 5 is the utility model preparation method step 2 gained intermediate structure schematic top plan view.
Fig. 6 is the utility model preparation method step 3 gained intermediate structure front schematic view.
Fig. 7 is the utility model preparation method step 4 gained intermediate structure front schematic view.
Fig. 8 is the utility model preparation method step 5 gained intermediate structure front schematic view.
Fig. 9 is the utility model preparation method step 5 gained intermediate structure schematic top plan view.
Figure 10 is the utility model preparation method step 6 gained Optical Waveguide Modes spot-size converter front schematic view.
When Figure 11 is that transverse electric mode light is transmitted in Optical Waveguide Modes spot-size converter described in the utility model, optical field distribution is overlooked Figure.
When Figure 12 is that transverse electric mode light is transmitted in Optical Waveguide Modes spot-size converter described in the utility model, optical field distribution side view Figure.
When Figure 13 is that E mode light transmits in Optical Waveguide Modes spot-size converter described in the utility model, optical field distribution is overlooked Figure.
When Figure 14 is that E mode light transmits in Optical Waveguide Modes spot-size converter described in the utility model, optical field distribution side view Figure.
Wherein, 1- top coverings, 2- intermediate cladding layers, 3- insulator layers, 4- substrates, the first fiber waveguides of 5-, the second fiber waveguides of 6-, 7- silicon nitride layers, 8- grooves.
Embodiment
Embodiment 1
Below by the description to embodiment, the shape of for example involved each component of specific embodiment of the present utility model The effect and operation principle of mutual alignment and connection relation, each several part between shape, construction, each several part, manufacturing process and operation Application method etc., is described in further detail, to help those skilled in the art to conceive the utility model of the utility model, Technical solution has more complete, accurate and deep understanding.
As shown in Figure 1, a kind of Optical Waveguide Modes spot-size converter of the present embodiment, including top covering 1, intermediate cladding layer 2, insulator layer 3rd, substrate 4.In common silicon optical chip, for the thickness of insulator layer 3 usually between 1-5um, the thickness of the first fiber waveguide 5 is usual In below 500nm.
In Optical Waveguide Modes spot-size converter described in the present embodiment, substrate 4 is silicon, and being made on substrate 4 has insulator layer 3.Absolutely 3 surface of edge body layer, which makes, the first fiber waveguide 5, and 5 material of the first fiber waveguide is silicon, includes one section of tapered fiber waveguide, the first light wave 5 are led to be positioned between intermediate cladding layer 2 and insulator layer 3.Second fiber waveguide 6 is including one section of reverse tapered fiber waveguide 6a and one section just To tapered fiber waveguide 6b.Second fiber waveguide 6 is silicon nitride material, is placed between top covering 1 and intermediate cladding layer 2.
The present embodiment provides a kind of production method of above-mentioned Optical Waveguide Modes spot-size converter, comprise the following steps that:
Step 1:In silicon base on insulator layer, using beamwriter lithography or deep UV lithography and dry etching etc. Integrated micro technique makes the first fiber waveguide.After the completion of the step, its structure is as shown in Figure 2,3.
Step 2:After the tip of the first fiber waveguide, using beamwriter lithography or deep UV lithography and dry etching etc. Integrated micro technique makes groove.After the completion of the step, its structure is as shown in Figure 4,5.
Step 3:Depositing inter-layer silica is filled groove, and uses cmp method, to whole Chip is planarized, and controls the thickness of intermediate layer silica.After the completion of the step, its structure is as shown in Figure 6.
Step 4:One layer of silicon nitride is being deposited obtained by step (3) on chip.After the completion of the step, its structure is as shown in Figure 7.
Step 5:Using the integrated micro technique such as beamwriter lithography or deep UV lithography and dry etching, in silicon nitride The second fiber waveguide is made on layer.After the completion of the step, its structure is as shown in Figure 8,9.
Step 6:Top covering silica is being deposited obtained by step (5) on chip.After the completion of the step, its structure such as Figure 10 It is shown.
When using the structure of the utility model, light is incident from left side.The mould field of reverse tapered fiber waveguide 6a left side tips Match with the mould field in single mode optical fiber, the light guide lotus root in single mode optical fiber can be incorporated into the second fiber waveguide 6.General single mode light The diameter of fine mould field is in general 10um or so, to avoid light field from being leaked in substrate 4, it is necessary to make reversely below tapered fiber waveguide 6a Thickness of insulating layer cannot be too thin.The usual thickness of insulator layer 3 cannot be met the requirements, therefore, in reverse tapered fiber waveguide 6a Groove 8 is made below, and depth fills silica between 10-15um.It is at the same time the symmetrical above and below of guarantee waveguiding structure Property, the upper under-clad layer of reverse tapered fiber waveguide 6a should be consistent, therefore the material of top covering 1 is titanium dioxide in the utility model Silicon, thickness is between 10-25um.Width with reverse tapered fiber waveguide 6a gradually increases, and light field is preferably limited in anti- Into tapered fiber waveguide 6a, light field diameter also accordingly reduces.Reach reversely tapered fiber waveguide 6a's and positive tapered fiber waveguide 6b During intersection, the usual thickness of insulator layer 3 can ensure that light field will not be leaked in substrate 4, therefore the edge of groove 8 It also is located at this.Afterwards, the width of positive tapered fiber waveguide 6b is gradually reduced, while the width of the first fiber waveguide 5 gradually increases, Due to coupling, light field is transferred in the first fiber waveguide 5.To ensure to have between positive tapered fiber waveguide 6b and the first fiber waveguide 5 Certain stiffness of coupling, the thickness of intermediate cladding layer 2 is in below 500nm.The final effect of the utility model structure is to realize light field From single mode optical fiber to the coupling of silicon waveguide
In Figure 11,12, to transmission situation of the transverse electric mode light in the Optical Waveguide Modes spot-size converter that the utility model is realized Carry out numerical simulation.Light is inputted from left side, is emitted from right side silicon waveguide.Transmitting procedure intuitively demonstrates above description.
In Figure 13,14, to transmission situation of the E mode light in the Optical Waveguide Modes spot-size converter that the utility model is realized Carry out numerical simulation.Light is inputted from left side, is emitted from right side silicon waveguide.Transmitting procedure intuitively demonstrates above description.
The utility model is exemplarily described above, it is clear that the utility model implements and from aforesaid way Limitation, as long as not employing the improvement for the various unsubstantialities that the methodology of the utility model and technical solution carry out, or not It is improved that the design of the utility model and technical solution are directly applied into other occasions, the protection model in the utility model Within enclosing.The scope of protection of the utility model should be determined by the scope of protection defined in the claims.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiment of the utility model and from above-mentioned The limitation of embodiment, the change made under other any Spirit Essences and principle without departing from the utility model, modify, replace Generation, combination, simplify, and should be equivalent substitute mode, is included within the scope of protection of the utility model.

Claims (9)

  1. A kind of 1. Optical Waveguide Modes spot-size converter, it is characterised in that including:Top covering(1), intermediate cladding layer(2), insulator layer(3), Substrate(4), the first fiber waveguide(5)With the second fiber waveguide(6), the insulator layer(3)It is placed in the substrate(4)On, it is described Insulator layer(3)On set gradually intermediate cladding layer(2), top covering(1);First fiber waveguide(5)It is placed in intermediate cladding layer(2) With the insulator layer(3)Between, second fiber waveguide(6)It is placed in the top covering(1)With the intermediate cladding layer(2)It Between;First fiber waveguide(5)With the second fiber waveguide(6)It is oppositely arranged, the first fiber waveguide(5)With the second fiber waveguide(6)Phase To side to be tapered;Second fiber waveguide(6)With the first fiber waveguide(5)Opposite side is also tapered end, its tip Mould field and single mode optical fiber in mould field match;First fiber waveguide(5)With the second fiber waveguide(6)Opposite side is Rectangle.
  2. 2. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that including:First fiber waveguide(5) Tapered tip is not provided with setting groove on the substrate of the first fiber waveguide, is filled into by intermediate cladding layer after plane and makes the second light wave Lead(6).
  3. 3. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the top covering is silica, thickness Between 10-25um.
  4. 4. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that first fiber waveguide is silicon, and thickness exists Below 500nm.
  5. 5. Optical Waveguide Modes spot-size converter according to claim 2, it is characterised in that the depth of groove 10-15um it Between.
  6. 6. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the intermediate cladding layer is silica, thick Degree is in below 500nm.
  7. 7. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that second fiber waveguide is silicon nitride, thick Degree is in below 600nm.
  8. 8. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the insulator layer is silica, thick Degree is between 1-5um.
  9. 9. Optical Waveguide Modes spot-size converter according to claim 1, it is characterised in that the substrate is silicon.
CN201720981382.XU 2017-08-08 2017-08-08 A kind of Optical Waveguide Modes spot-size converter Active CN207281327U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201720981382.XU CN207281327U (en) 2017-08-08 2017-08-08 A kind of Optical Waveguide Modes spot-size converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201720981382.XU CN207281327U (en) 2017-08-08 2017-08-08 A kind of Optical Waveguide Modes spot-size converter

Publications (1)

Publication Number Publication Date
CN207281327U true CN207281327U (en) 2018-04-27

Family

ID=61985757

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201720981382.XU Active CN207281327U (en) 2017-08-08 2017-08-08 A kind of Optical Waveguide Modes spot-size converter

Country Status (1)

Country Link
CN (1) CN207281327U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107346049A (en) * 2017-08-08 2017-11-14 苏州易缆微光电技术有限公司 A kind of Optical Waveguide Modes spot-size converter and preparation method thereof
WO2021175082A1 (en) * 2020-03-02 2021-09-10 苏州旭创科技有限公司 Spot size converter and silicon-optical integrated chip
CN114460685A (en) * 2022-01-30 2022-05-10 上海图灵智算量子科技有限公司 Optical unit, chip and method for manufacturing the same
CN114895401A (en) * 2022-04-20 2022-08-12 黄山博蓝特半导体科技有限公司 Silicon photonic chip optical coupling structure and manufacturing method thereof
CN117348153A (en) * 2023-12-05 2024-01-05 希烽光电科技(南京)有限公司 Multilayer waveguide edge coupler

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107346049A (en) * 2017-08-08 2017-11-14 苏州易缆微光电技术有限公司 A kind of Optical Waveguide Modes spot-size converter and preparation method thereof
WO2021175082A1 (en) * 2020-03-02 2021-09-10 苏州旭创科技有限公司 Spot size converter and silicon-optical integrated chip
CN114460685A (en) * 2022-01-30 2022-05-10 上海图灵智算量子科技有限公司 Optical unit, chip and method for manufacturing the same
CN114895401A (en) * 2022-04-20 2022-08-12 黄山博蓝特半导体科技有限公司 Silicon photonic chip optical coupling structure and manufacturing method thereof
CN117348153A (en) * 2023-12-05 2024-01-05 希烽光电科技(南京)有限公司 Multilayer waveguide edge coupler
CN117348153B (en) * 2023-12-05 2024-06-11 希烽光电科技(南京)有限公司 Multilayer waveguide edge coupler

Similar Documents

Publication Publication Date Title
CN207281327U (en) A kind of Optical Waveguide Modes spot-size converter
CN107346049A (en) A kind of Optical Waveguide Modes spot-size converter and preparation method thereof
CN110658586B (en) End face coupler and preparation method thereof
CN108132499B (en) Silicon waveguide mode spot converter based on multilayer polymer structure and preparation method thereof
CN101359071B (en) Light coupled device
CN101915965B (en) Grating coupler and package structure thereof
US9696498B2 (en) Three-dimensional (3D) photonic chip-to-fiber interposer
US20050157989A1 (en) Optical package substrate, optical device, optical module, and method for molding optical package substrate
CN108983352B (en) End face coupler and preparation method thereof
CN104459890B (en) Optical fiber and silicon waveguide coupled structure based on polymer waveguide and preparation method thereof
CN104765102B (en) A kind of encapsulating structure of silicon photon chip
CN109143466A (en) A kind of hybrid integrated silicon optical chip, optical device and chip manufacture method
CN106461872A (en) Apparatus and method for optical waveguide edge coupler for photonic integrated chips
CN109324372B (en) Silicon optical waveguide end face coupler
CN210626707U (en) End face coupler
CN210666088U (en) Silicon optical mode spot mode converter
CN113534337B (en) Processing method and structure of silicon photonic chip optical coupling structure
CN109791251A (en) Beam spot size converter
CN105866903A (en) Laser and planar optical waveguide hybrid integrated structure and manufacturing method thereof
WO2022135095A1 (en) End face coupler and manufacturing method therefor
CN112285829A (en) Silicon-based light spot mode field converter and manufacturing process thereof
CN106921112A (en) Multi-wavelength silicon substrate hybrid integrated slot laser integrated optical sources and preparation method thereof
CN103777283B (en) Multi-mode interference-type photoswitch that a kind of input position controls and preparation method thereof
CN213517647U (en) Silicon-based light spot mode field converter
CN113917613A (en) Silicon waveguide end face coupling structure and preparation method thereof

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant