CN107253294A - A kind of new structure line slice process - Google Patents
A kind of new structure line slice process Download PDFInfo
- Publication number
- CN107253294A CN107253294A CN201710339535.5A CN201710339535A CN107253294A CN 107253294 A CN107253294 A CN 107253294A CN 201710339535 A CN201710339535 A CN 201710339535A CN 107253294 A CN107253294 A CN 107253294A
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- CN
- China
- Prior art keywords
- steel wire
- rod
- cutting
- workpiece
- slice process
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of new structure line slice process, comprise the following steps：Slurry is changed, and makes liquid level accurate；Upper rod is clamped, and workpiece is installed in place；File configuration, makes the fast flow matches of line platform, the matching of Tensity size ripple；Preheating, which is opened, cuts, it is ensured that gauze cleanliness factor；Rod under rod is risen, workpiece is cut through.Traditional steel wire is substituted using structure steel wire in the present invention, the adhesive force of silicon-carbide particle can be increased during cutting silicon rod, it is not easy to come off from structure steel wire surface, structure steel wire is carried the cutting that more mortars participate in silico briquette.Also the cutting power of structure steel wire is substantially increased.
Description
Technical field
Present invention relates particularly to a kind of new structure line slice process.
Background technology
Currently with the development of society, solar photovoltaic industry progressively turns into new leading industry.Cut in solar silicon wafers
During cutting, mainly by steel wire drive slurry (slurry configured according to a certain percentage by silicon carbide powder and suspension and
Into), in the presence of some tension, silicon rod is cut into size qualification using the rigid characteristic and sharp water caltrop of silicon-carbide particle
Silicon chip.Steel wire in whole cutting process is participated in as a carrier, while also worn and torn by the silicon-carbide particle of high-speed motion,
The change of line footpath may influence the cut quality of silicon chip surface.
Carborundum Mohs' hardness in mortar is 9.5 grades, and the Mohs' hardness of crystalline silicon is 7 grades, main in cutting process
Grinding cutting is carried out to crystalline silicon by carborundum.Steel wire carry mortar number directly affect silicon rod cutting effect.At present
It is circular or ellipse common steel wire that the steel wire for the cutting silicon chip that solar energy industry is generally used, which is mainly cross section,.In cutting
During silicon rod, silicon-carbide particle easily comes off due to lacking adhesive force from steel wire surface, and steel wire can cause in silicon rod line inlet port
The splashing of slurry, and then carry the cutting that fewer mortar participates in silicon rod.This causes steel wire easily to be worn and torn in cutting process,
Cause broken string, be greatly reduced the cutting power of steel wire.
The content of the invention
Goal of the invention：In order to solve the deficiencies in the prior art, the invention provides a kind of new structure line slice process.
Technical scheme：A kind of new structure line slice process, comprises the following steps：
(1) slurry is changed, and makes liquid level accurate；
(2) rod is clamped on, and workpiece is installed in place；
(3) file configuration, makes the fast flow matches of line platform, the matching of Tensity size ripple；
(4) preheating, which is opened, cuts, it is ensured that gauze cleanliness factor；
(5) rod under rod is risen, workpiece is cut through.
It is used as optimization：After the structure lines slice process, the carborundum of silicon chip surface is ground vestige in 3-4um, and silicon chip is whole
Body thickness is well maintained at 200um ± 20um, and TTV<15um.
Beneficial effect：Traditional steel wire is substituted using structure steel wire in the present invention, carbonization can be increased during cutting silicon rod
The adhesive force of silicon grain, it is not easy to come off from structure steel wire surface, makes structure steel wire carry more mortars and participates in silico briquette
Cutting.Also the cutting power of structure steel wire is substantially increased.
Embodiment
The technical scheme in the embodiment of the present invention will be clearly and completely described below, so that the technology of this area
Personnel can be better understood from advantages and features of the invention, so as to make apparent boundary to protection scope of the present invention
It is fixed.Embodiment described in the invention is only a part of embodiment of the invention, rather than whole embodiments, based on the present invention
In embodiment, the every other implementation that those of ordinary skill in the art are obtained on the premise of creative work is not made
Example, belongs to the scope of protection of the invention.
Embodiment
The main consumption of overall section link cost at present is carborundum, suspension, steel wire, the present whole prices of raw materials
Glide, cutting steel wire ratio shared in sand, line, liquid cost is 20%, and wherein carborundum and cutting liquid account for main portion
Point.The main application of structure steel wire is that polycrystalline ingot evolution is used in photovoltaic industry, less, the master of the application in silicon chip cutting
It is that the cost of structure lines in itself is higher than common steel wire to want reason, this allow for steel wire consumption it is larger silicon chip cutting in into
This is higher.By the way that structure lines are replaced into common steel wire, line of cut ratio where in yarn liquid, reduction carborundum and cutting are improved
The consumption of liquid, so as to reduce the holistic cost of yarn liquid.The price of structure lines is higher than ordinary straight steel wire by 30% in the market, leads to
The consumption of reduction mortar is crossed, the speed of table of process equipment is improved, the Homes Using TV of equipment is improved, raw material is finally reached and sets
The common reduction of standby expense.
A kind of new structure line slice process, comprises the following steps：
(1) slurry is changed, and makes liquid level accurate；
(2) rod is clamped on, and workpiece is installed in place；
(3) file configuration, makes the fast flow matches of line platform, the matching of Tensity size ripple；
(4) preheating, which is opened, cuts, it is ensured that gauze cleanliness factor；
(5) rod under rod is risen, workpiece is cut through.
Silicon rod is cut by using structure steel wire and test data is tracked, the carborundum mill of silicon chip surface
Sheeter lines mark is well maintained at 200um ± 20um, and TTV in 3-4um, silicon chip integral thickness<15um.
Claims (2)
1. a kind of new structure line slice process, it is characterised in that：Comprise the following steps：
(1) slurry is changed, and makes liquid level accurate；
(2) rod is clamped on, and workpiece is installed in place；
(3) file configuration, makes the fast flow matches of line platform, the matching of Tensity size ripple；
(4) preheating, which is opened, cuts, it is ensured that gauze cleanliness factor；
(5) rod under rod is risen, workpiece is cut through.
2. new structure line slice process according to claim 1, it is characterised in that：After the structure lines slice process,
The carborundum of silicon chip surface is ground vestige in 3-4um, and silicon chip integral thickness is well maintained at 200um ± 20um, and TTV<15um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710339535.5A CN107253294A (en) | 2017-05-15 | 2017-05-15 | A kind of new structure line slice process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710339535.5A CN107253294A (en) | 2017-05-15 | 2017-05-15 | A kind of new structure line slice process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107253294A true CN107253294A (en) | 2017-10-17 |
Family
ID=60027981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710339535.5A Pending CN107253294A (en) | 2017-05-15 | 2017-05-15 | A kind of new structure line slice process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107253294A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448701A (en) * | 1982-01-28 | 1984-05-15 | The United States Of America As Represented By The United States Department Of Energy | Aqueous cutting fluid for machining fissionable materials |
| CN102059749A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon wafer by using steel wire with diameter of 0.1mm |
| CN103343871A (en) * | 2013-07-02 | 2013-10-09 | 江苏宝钢精密钢丝有限公司 | Low-elasticity structure line and manufacturing method thereof |
| CN103448154A (en) * | 2013-08-28 | 2013-12-18 | 衡水英利新能源有限公司 | Silicon-block cutting method |
| CN105252660A (en) * | 2015-11-22 | 2016-01-20 | 天津英利新能源有限公司 | Silicon wafer cutting treatment method |
-
2017
- 2017-05-15 CN CN201710339535.5A patent/CN107253294A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448701A (en) * | 1982-01-28 | 1984-05-15 | The United States Of America As Represented By The United States Department Of Energy | Aqueous cutting fluid for machining fissionable materials |
| CN102059749A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon wafer by using steel wire with diameter of 0.1mm |
| CN103343871A (en) * | 2013-07-02 | 2013-10-09 | 江苏宝钢精密钢丝有限公司 | Low-elasticity structure line and manufacturing method thereof |
| CN103448154A (en) * | 2013-08-28 | 2013-12-18 | 衡水英利新能源有限公司 | Silicon-block cutting method |
| CN105252660A (en) * | 2015-11-22 | 2016-01-20 | 天津英利新能源有限公司 | Silicon wafer cutting treatment method |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20171017 |