CN103921361A - Steel wire technology for cutting solar silicon wafers - Google Patents
Steel wire technology for cutting solar silicon wafers Download PDFInfo
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- CN103921361A CN103921361A CN201410176490.0A CN201410176490A CN103921361A CN 103921361 A CN103921361 A CN 103921361A CN 201410176490 A CN201410176490 A CN 201410176490A CN 103921361 A CN103921361 A CN 103921361A
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Abstract
The invention discloses a steel wire technology for cutting solar silicon wafers. The steel wire technology includes the following steps: a groove distance is decreased; in the cutting process, the wire inlet tension of a 105 steel wire for cutting single crystals is 17 N-18 N, and the wire outlet tension of the 105 steel wire for cutting the single crystals is 15 N-16 N; the density and the viscosity of mortar are increased; the flow of the mortar during cutting is improved by 10 L/min-15 L/min to be larger than 85 L/min; the temperature of the mortar during cutting is lowered from original 25 DEG C to 23 DEG C. By means of the steel wire technology, the diameter of the steel wire is decreased, more silicon wafers can be cut out, the cutting quality of the steel wire technology is not reduced, the cutting efficiency is accordingly improved, and the cutting cost is accordingly reduced.
Description
Technical field
The present invention is specifically related to a kind of for cutting the steel wire technique of solar silicon wafers.
Background technology
The industrial chain of monocrystalline photovoltaic is: silicon material, and------silicon chip---battery---assembly, the proportion of the value of silicon material in whole industry chain is larger to silicon rod, how silicon material can be utilized to the direction that becomes silicon chip business research efficiently.The steel wire diameter main flow that at present silicon single crystal rod is cut into silicon chip is 115um-120um.
The development in nearly 5 years of China's photovoltaic generation industry is swift and violent, and solar power silicon sheet cutting equipment drops into putting into operation of several times of nearly three year's harvest and tens times, wherein cutting with steel wire with section board expand production and consumption in a large number.
In solar silicon wafers line cutting process, whole mechanism is to utilize the rigid characteristic of silicon-carbide particle and sharp water caltrop that silicon rod is progressively blocked, therefore in cutting, mortar is coated on the steel wire surface in high-speed motion equably, the silicon-carbide particles that make of uniform and stable act on silicon rod surface, take away in time cutting heat and crushed particles simultaneously, guarantee the surface quality of silicon chip, steel wire is that carrier of cutting mortar is is also worn and torn by the carborundum in high-speed motion simultaneously indirectly, and wire diameter changes and affects line and cut quality.
Development along with whole solar energy industry, in the cutting of solar silicon wafers line, a large amount of lines that use are cut steel wire, be unfavorable for that environment controls and cause the increase of entreprise cost, in order to adapt to the competition development need of future market demand and price, how whole industry is all for improving steel wire surface abrasion resistance and use amount and cutting efficiency and reduction cutting cost is ceaselessly found new approach.
Summary of the invention
Goal of the invention: the invention provides a kind of for cutting the steel wire technique of solar silicon wafers.
Technical scheme: a kind of for cutting the steel wire technique of solar silicon wafers: to comprise the steps:
1, first reduce slot pitch and be reduced to 327um by original 337um, guide wheel material, included angle etc. do not change.
2, the steel wire in cutting has certain wear extent, making the wear extent of steel wire moderate is more crucial factor, wear extent is excessive, can cause outage to rise, wear extent is too small, steel wire does not utilize fully, and the wear extent of steel wire becomes certain positive correlation with the outage of steel wire, and the wear extent and the outage that found through experiments 105um steel wire have following relation:
The wear extent of steel wire and steel wire by line amount, have certain relation, steel wire larger by line amount, wear extent is less, but the consumption of steel wire is higher, cause the cutting cost of steel wire to rise, but too reducing by line amount of steel wire, will increase the wear extent of steel wire, cause outage to rise, product occurs that defect ware ratio rises, for 105 steel wires cuttings polycrystalline, it is the most reasonable that experiment finds that the wear extent when steel wire is controlled within the scope of 7-8um, and the economic benefit of generation is best.
3, in cutting process, cutting steel wire must possess certain tension force and just can cut, and the setting of tension force and the wire diameter of steel wire have certain relation, and the most rational tension force of 105 steel wire cutting monocrystalline is that inlet wire tension force is 17-18N, and going out line tension is 15-16N.Steel wire overtension, easily causes broken string, and steel wire tension force is too small, there will be stria sheet degradation.
4, because steel wire attenuates, its cross-sectional area diminishes, and the ability of carrying mortar dies down, and for increasing the band sand ability of steel wire, need to do following adjustment:
A, the density of mortar and viscosity need to be increased, density is brought up to 1.66-1.67kg/L by original 1.62-1.63kg/L, and viscosity is brought up to 330 ± 20mpa.s by 250 original ± 20mPas.Under this density and viscosity, the yields of cutting is the highest.
B, will cut in mortar flow improve 10-15L/min, more than reaching 85L/min.
C, because of the variation meeting of the viscosity with temperature of PEG in mortar, great changes will take place, and being increases mortar viscosity, and the temperature of mortar in cutting, by original 25 ℃, is reduced to 23 ℃.
Beneficial effect: the present invention, by reducing the diameter of steel wire, can cut out more silicon chip, and not reduce its cut quality, thus the efficiency of cutting improved, also therefore reduced cutting cost.
Industry is cut normally wire diameter and be take 115um as example, the thick 192um of sheet, slotting guide roller slot pitch is 337um, now use the steel wire of 105um, the thick 192um that maintains of sheet, slotting guide roller slot pitch changes 0.327mm into by 0.337mm, each adjacent slot pitch is dwindled 10um, the NTC slicer PV800H of take is example, cut the length of a cutter fuel rod at 800mm, can have more sheet subnumber is 800*1000/327-800*1000/337=73pcs, and each cutter frock can be the in the situation that of few consumption fuel rod, have more 73pcs silicon chip, be worth and be about 600 yuan.
For the product (silicon chip) after cutting, choose at random 20 sample contrasts, the in the situation that of same materials weight (this chooses the PV800H of our company slicer 2# board is example), kilogram non-defective unit number of contrast 115um steel wire and 105um steel wire (take industry nominal 17.6mm contrast for 1kg):
By above form, find, it utilizes above technique to use the cutting of 105um steel wire, than the cutting of 115um steel wire, do not increase cost prerequisite under, per kilogram raw material can cut non-defective unit 1.57pcs more.Produced very high economic worth.
The specific embodiment
Below in conjunction with specific embodiment, the present invention will be described in detail.
Specific embodiment:
A kind of for cutting the steel wire technique of solar silicon wafers: to comprise the steps:
1, first reduce slot pitch and be reduced to 327um by original 337um, guide wheel material, included angle etc. do not change.
2, the steel wire in cutting has certain wear extent, making the wear extent of steel wire moderate is more crucial factor, wear extent is excessive, can cause outage to rise, wear extent is too small, steel wire does not utilize fully, and the wear extent of steel wire becomes certain positive correlation with the outage of steel wire, and the wear extent and the outage that found through experiments 105um steel wire have following relation:
The wear extent of steel wire and steel wire by line amount, have certain relation, steel wire larger by line amount, wear extent is less, but the consumption of steel wire is higher, cause the cutting cost of steel wire to rise, but too reducing by line amount of steel wire, will increase the wear extent of steel wire, cause outage to rise, product occurs that defect ware ratio rises, for 105 steel wires cuttings polycrystalline, it is the most reasonable that experiment finds that the wear extent when steel wire is controlled within the scope of 7-8um, and the economic benefit of generation is best.
3, in cutting process, cutting steel wire must possess certain tension force and just can cut, the setting of tension force and the wire diameter of steel wire have certain relation, the most rational tension force of 105 steel wire cutting monocrystalline is that inlet wire tension force is 17-18N, going out line tension is 15-16N, optimal way is that inlet wire tension force is 17.5N, and going out line tension is 15.5N.Steel wire overtension, easily causes broken string, and steel wire tension force is too small, there will be stria sheet degradation.
4, because steel wire attenuates, its cross-sectional area diminishes, and the ability of carrying mortar dies down, and for increasing the band sand ability of steel wire, need to do following adjustment:
A, the density of mortar and viscosity need to be increased, density is brought up to 1.66-1.67kg/L by original 1.62-1.63kg/L, and preferred density is 1.665 kg/L, and viscosity is brought up to 330 ± 20Pas by 250 original ± 20mPas, and preferred viscosities is 330Pas.Under this density and viscosity, the yields of cutting is the highest.
B, will cut in mortar flow improve 10-15L/min, more than reaching 85L/min.
C, because of the variation meeting of the viscosity with temperature of PEG in mortar, great changes will take place, and being increases mortar viscosity, and the temperature of mortar in cutting, by original 25 ℃, is reduced to 23 ℃.
The present invention, by reducing the diameter of steel wire, can cut out more silicon chip, and not reduce its cut quality, thereby improves the efficiency of cutting, has also therefore reduced cutting cost.
Industry is cut normally wire diameter and be take 115um as example, the thick 192um of sheet, slotting guide roller slot pitch is 337um, now use the steel wire of 105um, the thick 192um that maintains of sheet, slotting guide roller slot pitch changes 0.327mm into by 0.337mm, each adjacent slot pitch is dwindled 10um, the NTC slicer PV800H of take is example, cut the length of a cutter fuel rod at 800mm, can have more sheet subnumber is 800*1000/327-800*1000/337=73pcs, and each cutter frock can be the in the situation that of few consumption fuel rod, have more 73pcs silicon chip, be worth and be about 600 yuan.
Claims (5)
1. for cutting a steel wire technique for solar silicon wafers, it is characterized in that: comprise the steps:
(1) reduce slot pitch, by original 337um, be reduced to 327um;
(2) in cutting process, the tension force of 105 steel wire cutting monocrystalline is that inlet wire tension force is 17-18N, and going out line tension is 15-16N;
(3) density of mortar and viscosity are increased, density is brought up to 1.66-1.67kg/L by original 1.62-1.63kg/L, and viscosity is brought up to 330 ± 20mPas by 250 original ± 20mPas;
(4) will cut in mortar flow improve 10-15L/min, more than reaching 85L/min;
(5) because of the variation meeting of the viscosity with temperature of PEG in mortar, great changes will take place, and being increases mortar viscosity, and the temperature of mortar in cutting, by original 25 ℃, is reduced to 23 ℃.
2. as claimed in claim 1 for cutting the steel wire technique of solar silicon wafers, it is characterized in that: the inlet wire tension force in described step (2) is 17.5N.
3. as claimed in claim 1 for cutting the steel wire technique of solar silicon wafers, it is characterized in that: the line tension that goes out in described step (2) is 15.5N.
4. as claimed in claim 1 for cutting the steel wire technique of solar silicon wafers, it is characterized in that: the density of the mortar in described step (3) is 1.665 kg/L.
5. as claimed in claim 1 for cutting the steel wire technique of solar silicon wafers, it is characterized in that: the viscosity of the mortar in described step (3) is 330 mPas.
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| CN201410176490.0A CN103921361A (en) | 2014-04-29 | 2014-04-29 | Steel wire technology for cutting solar silicon wafers |
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| CN201410176490.0A CN103921361A (en) | 2014-04-29 | 2014-04-29 | Steel wire technology for cutting solar silicon wafers |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108000739A (en) * | 2017-11-28 | 2018-05-08 | 江苏奥明能源有限公司 | A kind of mortar cutting method |
| CN109352845A (en) * | 2018-10-23 | 2019-02-19 | 开封大学 | A kind of NTC-MWM442DM silicon materials cutting machine method for cutting silicon chips |
| CN114770779A (en) * | 2022-04-29 | 2022-07-22 | 浙江晶盛机电股份有限公司 | Mortar cutting process of silicon carbide crystal and silicon carbide sheet |
| CN114872212A (en) * | 2022-04-22 | 2022-08-09 | 浙江晶盛机电股份有限公司 | Mortar temperature control method and system and slicing machine |
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| JPH1174234A (en) * | 1997-08-29 | 1999-03-16 | Super Silicon Kenkyusho:Kk | Wire-saw cutting method and device thereof |
| DE10062069A1 (en) * | 1999-12-14 | 2001-06-21 | Sumitomo Spec Metals | Cutting method for rare earth metal alloy involves cutting object with tensioned cutting wire whilst feeding slurry between wire and object, using organic polymer wire drive device surface |
| US20030181023A1 (en) * | 2000-08-28 | 2003-09-25 | Masanori Kimura | Method of processing silicon single crystal ingot |
| CN102172996A (en) * | 2011-02-14 | 2011-09-07 | 上海日进机床有限公司 | Crystal immersing and cutting method |
| CN103072211A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Fretsaw cutting method |
| CN103692563A (en) * | 2013-11-28 | 2014-04-02 | 国电兆晶光电科技江苏有限公司 | Polycrystalline silicon chip cutting method capable of saving steel wire |
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2014
- 2014-04-29 CN CN201410176490.0A patent/CN103921361A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1174234A (en) * | 1997-08-29 | 1999-03-16 | Super Silicon Kenkyusho:Kk | Wire-saw cutting method and device thereof |
| DE10062069A1 (en) * | 1999-12-14 | 2001-06-21 | Sumitomo Spec Metals | Cutting method for rare earth metal alloy involves cutting object with tensioned cutting wire whilst feeding slurry between wire and object, using organic polymer wire drive device surface |
| US20030181023A1 (en) * | 2000-08-28 | 2003-09-25 | Masanori Kimura | Method of processing silicon single crystal ingot |
| CN102172996A (en) * | 2011-02-14 | 2011-09-07 | 上海日进机床有限公司 | Crystal immersing and cutting method |
| CN103072211A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Fretsaw cutting method |
| CN103692563A (en) * | 2013-11-28 | 2014-04-02 | 国电兆晶光电科技江苏有限公司 | Polycrystalline silicon chip cutting method capable of saving steel wire |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108000739A (en) * | 2017-11-28 | 2018-05-08 | 江苏奥明能源有限公司 | A kind of mortar cutting method |
| CN108000739B (en) * | 2017-11-28 | 2019-11-12 | 泉州台商投资区中达工业设计有限公司 | A kind of mortar cutting method |
| CN109352845A (en) * | 2018-10-23 | 2019-02-19 | 开封大学 | A kind of NTC-MWM442DM silicon materials cutting machine method for cutting silicon chips |
| CN114872212A (en) * | 2022-04-22 | 2022-08-09 | 浙江晶盛机电股份有限公司 | Mortar temperature control method and system and slicing machine |
| CN114872212B (en) * | 2022-04-22 | 2024-05-07 | 浙江晶盛机电股份有限公司 | Mortar temperature control method, system and slicer |
| CN114770779A (en) * | 2022-04-29 | 2022-07-22 | 浙江晶盛机电股份有限公司 | Mortar cutting process of silicon carbide crystal and silicon carbide sheet |
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Application publication date: 20140716 |