CN209851338U - Electroplating diamond wire - Google Patents
Electroplating diamond wire Download PDFInfo
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- CN209851338U CN209851338U CN201822023565.8U CN201822023565U CN209851338U CN 209851338 U CN209851338 U CN 209851338U CN 201822023565 U CN201822023565 U CN 201822023565U CN 209851338 U CN209851338 U CN 209851338U
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Abstract
The utility model provides an electroplating diamond wire, electroplating diamond wire includes the generating line, plates at the plating layer on generating line surface and inlays the diamond particle layer on the plating layer, the granule of diamond particle layer goes out the sword height and is 5.0 ~ 7.5 mu m. The utility model discloses an electroplating buddha's warrior attendant line is showing when cutting polycrystalline impurity silicon rod and reducing silicon chip line mark, TTV and piece proportion, improves polycrystalline impurity stick's cutting yield, reduces the broken string rate, reduces the monolithic copper wire quantity simultaneously, is showing and is reducing the section processing cost.
Description
Technical Field
The utility model belongs to the technical field of polycrystalline silicon chip processing, a electroplating buddha's warrior attendant line is related to.
Background
Solar photovoltaic power generation has been rapidly developed in recent years as one of the most potential forms of renewable resource utilization. In 2017, the global photovoltaic market is strongly increased, the newly added installed capacity reaches 102GW, the installed capacity is increased by more than 37% on the same scale, and the accumulated photovoltaic capacity reaches 405 GW. In 2017, the quantity of newly added equipment in China is 53GW, the quantity of newly added equipment is increased by over 53.6 percent on the same scale, the equipment is located in the world first for 5 continuous years, the accumulated equipment reaches 130GW, and the equipment is located in the world first for 3 continuous years. And the polycrystalline assembly has the advantages of high cost performance, long-term stable power generation efficiency and the like, and the polycrystalline silicon wafer occupies the photovoltaic market share for more than 80 percent for many years continuously.
Different from the conventional silicon carbide cutting mode, the diamond wire cutting silicon rod is in a two-body grinding mode, diamond is fixedly bonded on the surface of a steel wire, and the diamond can directly grind the silicon rod through the high-speed movement of the steel wire. The cutting mode has high efficiency, the processing process of the polycrystalline silicon rod can be shortened to 2-3 h every time, and the silicon powder generated in the cutting process can be directly recycled without generating excessive pollutants.
Compared with a resin diamond wire, the cutting force of the electroplating diamond wire is relatively strong, the cutting ratio of the electroplating diamond wire in the polycrystalline silicon rod is over 90%, the processing time can be shortened to 70-80 min, and the cutting efficiency and the productivity are greatly improved. However, the electroplated diamond wire currently supplied in mass production in the market has the problems of low cutting yield, high wire breakage rate, high single chip wire consumption and the like when cutting the polycrystalline impurity rod. The main reasons are that when the plating line cuts to impurity points (such as SiC and the like) in the silicon rod, the diamonds on the surface of the steel wire are abnormally worn, even part of the diamonds fall off, so that the cutting capability of the plating line is reduced, the quality problems of line marks, uneven thickness and the like easily occur on the surface of the silicon wafer, even the diamond wire is broken due to too large abrasion of the steel wire or too large bow of a cutting line, the slicing yield and the single-chip wire consumption are seriously influenced, and the slicing processing cost is increased.
Therefore, in order to solve the above problems in the cutting of the polycrystalline impurity rod, the field of polycrystalline slicing is urgently needed to develop and customize an electroplating diamond wire specially used for cutting the polycrystalline impurity silicon rod.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model aims to provide an electroplating diamond wire.
In order to achieve the purpose of the utility model, the utility model adopts the following technical proposal:
the utility model provides an electroplating diamond wire, electroplating diamond wire includes the generating line, plates at the plating layer on generating line surface and inlays the diamond particle layer on the plating layer, the granule of diamond particle layer goes out the sword height and is 5.0 ~ 7.5 mu m.
The utility model discloses an among the electroplating buddha's warrior attendant line, through the granule with diamond grained layer go out sword altitude control at 5.0 ~ 7.5 mu m's within range for buddha's warrior attendant line can show the cutting yield that promotes polycrystal impurity stick, reduces the broken string rate, reduces the monolithic copper wire quantity simultaneously, is showing and is reducing section processing cost.
The utility model discloses in, through the adhesion state of control diamond on the generating line surface, make diamond particles's the height of going out to remain in the within range.
In the present invention, the particle projecting height of the diamond particle layer may be 5.0 μm, 5.2 μm, 5.5 μm, 5.8 μm, 6.0 μm, 6.2 μm, 6.5 μm, 6.8 μm, 7.0 μm, 7.2 μm, 7.5 μm, or the like, preferably 6.0 to 7.5 μm; if the grain cutting height of the diamond grain layer is less than 5.0 μm, the cutting force is easy to be insufficient when the electroplated diamond wire cuts the polycrystalline impurity rod, and the problems of serious line marks and Total Thickness deviation (TTV) appear on the surface of the cut silicon wafer; if the height of the edge of the diamond particle layer is larger than 7.5 mu m, the problem that diamond particles fall off easily occurs when the electroplated diamond wire cuts a polycrystalline impurity rod, the cut silicon wafer has abnormal conditions such as dark cracks, splinters and the like, and the silicon wafer loss rate is increased.
In the present invention, the height of the diamond particle layer at which the diamond particles are exposed is the distance from the highest point of exposure to the surface of the plating layer.
Preferably, the number of diamond particles on the circumference of a line is 280-470 particles per millimeter of the surface of the electroplated layer, that is, the particle cutting rate of the diamond particle layer is 280-470 particles/mm, such as 280 particles/mm, 285 particles/mm, 290 particles/mm, 295 particles/mm, 300 particles/mm, 330 particles/mm, 350 particles/mm, 380 particles/mm, 400 particles/mm, 420 particles/mm, 450 particles/mm or 470 particles/mm, and the like, preferably 330-420 particles/mm.
The utility model discloses in, the granule of diamond grained layer goes out sword rate control and is in the within range, can guarantee that the surface quality and the yields of electroplated gold steel wire cutting polycrystal impurity stick produced silicon chip are showing the processing procedure stability that promotes, cutting process also and are promoted, and the line volume of using of plating line can reduce by a wide margin simultaneously, reduces silicon chip processing cost. If the edge exposure rate is too low, the problems that the cutting force is insufficient when the electroplating diamond wire cuts the polycrystalline impurity rod, and the surface of a cut silicon wafer has serious line marks and Total Thickness deviation (TTV) are easily caused; if the edge-cutting rate is too high, in the electroplating process, the diamond particles are easy to agglomerate and accumulate on the surface of the bus, and the like, so that the equivalent diameter of the electroplated diamond wire is greatly fluctuated in different areas, the thickness of the surface of the electroplated wire cut silicon wafer is uneven, and the fragment ratio is increased.
Preferably, the thickness of the electroplating layer is 1-3 μm, such as 1 μm, 1.3 μm, 1.5 μm, 1.8 μm, 2 μm, 2.2 μm, 2.5 μm, 2.8 μm or 3 μm.
Preferably, the equivalent diameter of the electroplating diamond wire D and the bus bar direct D1 satisfy the following relation: d is not less than D1 and not more than 21 mu m and is not less than D1 and 13 mu m.
In the utility model, the equivalent diameter of the electroplating diamond wire is two times of the total length from the center point of the bus to the peak of the diamond particle projection. It can also be expressed as the equivalent diameter of the electroplated diamond wire, i.e. the diameter of the bus bar +2 x the height of the edge of the diamond particle +2 x the thickness of the electroplated layer.
In the present invention, the bus bar is a steel wire.
The utility model discloses in, the tensile strength of generating line is 4000 ~ 5500N/mm2，4000N/mm2、4300N/mm2、4500N/mm2、4800N/mm2、5000N/mm2、5200N/mm2Or 5500N/mm2。
Select the generating line that has suitable tensile strength, help controlling the electroplating buddha's warrior attendant line's anti deformation rate of breaking is in suitable within range.
The fracture deformation resistance of the electroplated diamond wire obtained by the utility model is 0.6-1.0%, such as 0.6%, 0.65%, 0.68%, 0.7%, 0.75%, 0.78%, 0.8%, 0.85%, 0.88%, 0.9%, 0.95%, 0.98% or 1.0%.
In the present invention, the fracture deformation resistance rate is (maximum fracture deformation resistance/sample length) × 100%.
The utility model discloses in, adopt the high strength generating line to prepare the plating line, make electroplating buddha's warrior attendant line possess great rupture deflection for the anti rupture deformation rate control of plating line is in the within range of preferred.
As the preferred technical scheme of the utility model, electroplating diamond wire includes the generating line, the plating layer of plating on the generating line surface and inlays the diamond particle layer on the plating layer, the granule of diamond particle layer goes out the sword height and is 5.0 ~ 7.5 mu m, and the rate of going out is 280 ~ 470 grain/mm, and electroplating diamond wire's equivalent diameter is D1+13 mu m and is less than or equal to D1+21 mu m with generating line diameter D1, the diameter of generating line is 50-70 mu m.
Further preferably, the electroplated diamond wire comprises a bus, an electroplated layer plated on the surface of the bus and a diamond particle layer embedded on the electroplated layer, the cutting height of the diamond particle layer is 6.0-7.5 μm, the cutting rate is 330-420 particles/mm, the equivalent diameter of the electroplated diamond wire is 78-86 μm, the diameter of the bus is 65 μm, and the bus is a steel wire.
The electroplating diamond wire of the utility model can be used for diamond wire cutting. For example, the electroplated diamond wire is used for cutting polycrystalline impurity silicon rods.
In the application of the utility model, the polycrystalline silicon rod adopts the infrared flaw detector to detect (semiab, IRB-50) the inside impurity condition, and the silicon rod that impurity point is less than or equal to 5mm is kept apart alone, concentrates the bonding on diamond wire slicer work piece board, waits to cut, uses electroplating diamond wire to cut into slices to the impurity silicon rod after the solidification has been bonded.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses an electroplating buddha's warrior attendant line is showing when cutting polycrystalline impurity silicon rod and reducing silicon chip line mark, TTV and piece proportion, improves polycrystalline impurity stick's cutting yield, reduces the broken string rate, reduces the monolithic copper wire quantity simultaneously, is showing and is reducing the section processing cost.
Drawings
Fig. 1 is the structure schematic diagram of the electroplated diamond wire of the present invention, wherein 1 is a bus, 2 is an electroplated layer plated on the surface of the bus, 3 is diamond particles embedded on the electroplated layer, and a represents the particle cutting height of the diamond particle layer.
FIG. 2 is a schematic diagram showing the selection of the plating layer surface per millimeter length when calculating the exposure rate of the electroplated diamond wire according to the present invention.
Detailed Description
The technical solution of the present invention will be further explained by the following embodiments. It should be understood by those skilled in the art that the described embodiments are merely provided to assist in understanding the present invention and should not be construed as specifically limiting the present invention.
Example 1
In the present embodiment, there is provided an electroplated diamond wire, the structure diagram of which is shown in fig. 1, the electroplated diamond wire comprises a bus bar 1, an electroplated layer 2 plated on the surface of the bus bar, and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer has a particle cutting height a of 6.6 μm and a cutting rate of 345 particles/mm (the cutting rate is the number of all diamond particles on the circumference of the wire in the unit millimeter length range of the electroplated layer surface shown in fig. 2), the bus bar is a steel wire with a diameter of 65 μm, the thickness of the electroplated layer is 2 μm, and the bus bar has a tensile strength of 4500N/mm2The equivalent diameter of the electroplated diamond wire is measured to be 82 mu m by adopting a micrometer, and the maximum breaking resistance deformation and the maximum deformation rate (the testing length of the electroplated wire is 500mm) of the electroplated diamond wire are respectively 3.5mm and 0.7% by adopting an electronic universal testing machine.
Example 2
In this embodiment, an electrogilding method is providedThe structure schematic diagram of the steel wire is shown in figure 1, the electroplated diamond wire comprises a bus 1, an electroplated layer 2 plated on the surface of the bus and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer is tested by a Kolbert wire saw analyzer to have a particle cutting height a of 7.0 mu m and a cutting rate of 345 particles/mm (the cutting rate is the number of all diamond particles on the circumference of the wire in the unit millimeter length range of the surface of the electroplated layer shown in figure 2), wherein the bus is a steel wire with the diameter of 65 mu m, the thickness of the electroplated layer is 2 mu m, and the tensile strength of the bus is 4300N/mm2The equivalent diameter of the electroplated diamond wire measured by a micrometer is 83 micrometers, and the maximum breaking resistance deformation and the maximum deformation rate (the testing length of the electroplated wire is 500mm) of the electroplated diamond wire measured by an electronic universal testing machine are 3.8mm and 0.76 respectively.
Example 3
In the present embodiment, there is provided an electroplated diamond wire, the structure diagram of which is shown in fig. 1, the electroplated diamond wire comprises a bus bar 1, an electroplated layer 2 plated on the surface of the bus bar, and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer has a particle cutting height a of 7.4 μm and a cutting rate of 411 particles/mm (the cutting rate is the number of all diamond particles on the circumference of the wire in the unit millimeter length range of the surface of the electroplated layer shown in fig. 2), wherein the bus bar is a steel wire with a diameter of 65 μm, the thickness of the electroplated layer is 1.5 μm, and the tensile strength of the bus bar is 4800N/mm2The equivalent diameter of the electroplated diamond wire is measured to be 83 micrometers by adopting a micrometer, and the maximum breaking resistance deformation and the maximum deformation rate (the testing length of the electroplated wire is 500mm) of the electroplated diamond wire are respectively 3.4mm and 0.68% by adopting an electronic universal testing machine.
Example 4
In the present embodiment, there is provided an electroplated diamond wire, the structure of which is schematically shown in fig. 1, the electroplated diamond wire comprises a bus bar 1, an electroplated layer 2 plated on the surface of the bus bar, and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer has a particle cutting height a of 6.0 μm and a cutting rate of 420 particles/mm (the cutting rate is in the range of millimeter length on the surface of the electroplated layer shown in fig. 2) measured by a kolbert wire saw analyzerNumber of diamond particles on circumference of wire), wherein the bus is a steel wire with diameter of 65 μm, the thickness of the plating layer is 1 μm, and the tensile strength of the bus is 5000N/mm2The equivalent diameter of the electroplated diamond wire is measured to be 80 mu m by adopting a micrometer, and the maximum breaking resistance deformation and the maximum deformation rate (the testing length of the electroplated wire is 500mm) of the electroplated diamond wire are respectively 3.2mm and 0.64 percent by adopting an electronic universal testing machine.
Example 5
In the present embodiment, there is provided an electroplated diamond wire, the structure diagram of which is shown in fig. 1, the electroplated diamond wire comprises a bus bar 1, an electroplated layer 2 plated on the surface of the bus bar, and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer has a particle cutting height a of 7.5 μm and a cutting rate of 330 particles/mm (the cutting rate is the number of all diamond particles on the circumference of the wire in the unit millimeter length range of the electroplated layer surface shown in fig. 2), the thickness of the electroplated layer is 1.5 μm, and the bus bar has a tensile strength of 4000N/mm2The bus is a steel wire with the diameter of 65 mu m, the equivalent diameter of the electroplated diamond wire is 83 mu m measured by a micrometer, and the maximum fracture resistance deformation and the deformation rate (the testing length of the electroplated wire is 500mm) of the electroplated diamond wire are respectively 5.0mm and 1.0% measured by an electronic universal testing machine.
Example 6
In the present embodiment, there is provided an electroplated diamond wire, the structure diagram of which is shown in fig. 1, the electroplated diamond wire comprises a bus bar 1, an electroplated layer 2 plated on the surface of the bus bar, and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer has a particle cutting height a of 5.0 μm and a cutting rate of 470 particles/mm (the cutting rate is the number of all diamond particles on the circumference of the wire in the unit millimeter length range of the surface of the electroplated layer shown in fig. 2) measured by a kolbert wire saw analyzer, wherein the bus bar is a steel wire with a diameter of 65 μm, the thickness of the electroplated layer is 2 μm, and the tensile strength of the bus bar is 5500N/mm2Measuring the equivalent diameter of the electroplated diamond wire to be 79 mu m by using a micrometer, and testing the maximum breaking resistance deformation and the deformation rate of the electroplated diamond wire by using an electronic universal testing machine (the testing length of the electroplated wire is 500 m)m) are 3.0mm and 0.60%, respectively.
Example 7
In the present embodiment, there is provided an electroplated diamond wire, the structure diagram of which is shown in fig. 1, the electroplated diamond wire comprises a bus bar 1, an electroplated layer 2 plated on the surface of the bus bar, and a diamond particle layer 3 embedded on the electroplated layer, the diamond particle layer has a particle cutting height a of 5.5 μm and a cutting rate of 280 particles/mm (the cutting rate is the number of all diamond particles on the circumference of the wire in the unit millimeter length range of the electroplated layer surface shown in fig. 2), wherein the bus bar is a steel wire with a diameter of 65 μm, the thickness of the electroplated layer is 1 μm, and the tensile strength of the bus bar is 5600N/mm2The equivalent diameter of the electroplated diamond wire is measured to be 78 micrometers by adopting a micrometer, and the maximum breaking resistance deformation and the maximum deformation rate of the electroplated diamond wire are respectively 2.5mm and 0.5 percent by adopting an electronic universal tester.
Comparative example 1
The only difference from example 1 is that the diamond particle layer had a particle edge height a of 4.8 μm and an equivalent diameter of 78 μm.
Comparative example 2
The only difference from example 1 is that the diamond particle layer had a particle cutting height a of 8.0 μm and an equivalent diameter of 87 μm, respectively.
Comparative example 3
The only difference from example 1 is that the particle chipping rate of the diamond particle layer was 230 particles/mm.
Comparative example 4
The only difference from example 1 is that the particle chipping rate of the diamond particle layer was 550 particles/mm.
Example 8
Polycrystalline contaminant rods from manufacturer X were cut using the electroplated diamond wires of examples 1-7 and comparative examples 1-4. The size of the impurity points in the silicon rod is 0-5 mm, and the number of the impurity points is not limited. The cutting process of the examples was kept the same as the comparative examples, all at 100min + single roll 12 knives/roll (50 km).
TABLE 1
As can be seen from Table 1, when the electroplated diamond wire of the present invention is used for cutting polycrystalline impurity rods, the actual number of cutting knives in a single coil reaches 14 knives, the average through rate is above 93%, the A piece rate is above 88.65%, the B-grade line mark and total thickness deviation (TTV) account for less than 3.5%, the C-grade line mark and TTV account for less than 3.05%, the piece account for less than 3.25%, and the average single piece line consumption is less than 1.51 m/piece, in comparison, the comparative examples 1-2 have lower or higher exposure height, which results in the decrease of the through rate and the A piece rate, the B-grade line mark and total thickness deviation (TTV) account for more than, the C-grade line mark and TTV account for more than or the piece ratio is increased. Comparative examples 3 to 4 resulted in a decrease in through-cut and a-plate cut, an increase in the ratio of class B line marks to Total Thickness Variation (TTV), and an increase in the ratio of class C line marks to TTV or chip ratios due to too low or too high particle exposure of the diamond particle layer.
The applicant states that the present invention is described by the above embodiments, but the present invention is not limited to the above embodiments, that is, the present invention must not be implemented by the above embodiments. It should be clear to those skilled in the art that any improvement of the present invention is to the equivalent replacement of the selected raw materials, the addition of auxiliary components, the selection of specific modes, etc., all fall within the protection scope and disclosure scope of the present invention.
Claims (10)
1. The electroplated diamond wire is characterized by comprising a bus, an electroplated layer plated on the surface of the bus and a diamond particle layer embedded on the electroplated layer, wherein the edge height of the diamond particle layer is 5.0-7.5 mu m; the number of diamond particles on the circumference of the wire is 280-470 particles within the unit millimeter length range of the surface of the electroplated layer.
2. The plated diamond wire according to claim 1, wherein the diamond particle layer has a particle edge height of 6.0 to 7.5 μm.
3. The electroplated diamond wire of claim 1, wherein the number of diamond particles on the circumference of the wire is 330-420 particles per millimeter of the surface of the electroplated layer.
4. The plated diamond wire according to claim 1, wherein the thickness of the plating layer is 1 to 3 μm.
5. The plated diamond wire of claim 1, wherein the equivalent diameter D of the plated diamond wire and the busbar diameter D1 satisfy the following relationship: d is not less than D1 and not more than 21 mu m and is not less than D1 and 13 mu m.
6. The plated diamond wire of claim 1, wherein the bus bar has a diameter of 50-70 μ ι η.
7. The electroplated diamond wire of claim 6, wherein the diameter of the busbar is 65 μ ι η.
8. The plated diamond wire of claim 1, wherein the bus bar is a steel wire.
9. The electroplated diamond wire of claim 1, wherein the equivalent diameter D of the electroplated diamond wire and the bus bar diameter D1 satisfy D1+13 μm ≦ D1+21 μm, and the bus bar diameter is 50-70 μm.
10. The electroplated diamond wire as claimed in claim 9, wherein the height of the diamond particle layer is 6.0-7.5 μm, the number of diamond particles on the circumference of the wire is 330-420 particles within the unit millimeter length of the surface of the electroplated layer, the equivalent diameter of the electroplated diamond wire is 78-86 μm, the diameter of the bus bar is 65 μm, and the bus bar is a steel wire.
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| CN201822023565.8U CN209851338U (en) | 2018-12-04 | 2018-12-04 | Electroplating diamond wire |
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| CN201822023565.8U CN209851338U (en) | 2018-12-04 | 2018-12-04 | Electroplating diamond wire |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111267253A (en) * | 2018-12-04 | 2020-06-12 | 洛阳阿特斯光伏科技有限公司 | Electroplating diamond wire and application thereof |
| CN112793023A (en) * | 2021-01-15 | 2021-05-14 | 河南鑫宇光科技股份有限公司 | Multi-wire cutting method for machining Faraday optical rotator |
-
2018
- 2018-12-04 CN CN201822023565.8U patent/CN209851338U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111267253A (en) * | 2018-12-04 | 2020-06-12 | 洛阳阿特斯光伏科技有限公司 | Electroplating diamond wire and application thereof |
| CN112793023A (en) * | 2021-01-15 | 2021-05-14 | 河南鑫宇光科技股份有限公司 | Multi-wire cutting method for machining Faraday optical rotator |
| CN112793023B (en) * | 2021-01-15 | 2022-07-29 | 河南鑫宇光科技股份有限公司 | Multi-line cutting method for machining Faraday rotator |
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