CN107248850B - Non-inductance low-power-consumption high-gain high-linearity broadband low-noise amplifier - Google Patents
Non-inductance low-power-consumption high-gain high-linearity broadband low-noise amplifier Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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Abstract
A broadband low-noise amplifier without inductance, low power consumption, high gain and high linearity is provided with an amplifying unit, a multiplexing unit, a cascading unit, a load unit, an input matching feedback unit, a current mirror unit and a reverse isolation output matching unit; the radio frequency input signal is connected with the amplifying unit, the output of the amplifying unit is respectively connected with the multiplexing unit and the cascading unit, the output of the cascading unit is respectively connected with the load unit, the input matching feedback unit and the reverse isolation output matching unit, the output of the input matching feedback unit is also connected with the amplifying unit in a feedback mode besides the current mirror unit, and the reverse isolation output matching unit outputs a radio frequency output signal.
Description
Technical Field
The invention relates to a low noise amplifier in a radio frequency receiver system, in particular to a broadband low noise amplifier without inductance, low power consumption, high gain and high linearity.
Background
A low noise amplifier is a first stage active circuit in a wireless receiver that itself should have very low noise and provide sufficient gain to suppress noise in subsequent circuits. In designing, various design index requirements need to be met, for example: small chip area, low noise, low power consumption, high gain, high linearity, and wide bandwidth. Because some design indexes have contradictions, such as low noise and high linearity, the design is difficult to be considered completely, and compromise is required or some technical means are adopted.
The active resistance negative feedback structure amplifier generally occupies a small chip area due to no or little adoption of an inductor, so that the active resistance negative feedback structure amplifier is widely applied to the design of a low-cost broadband low-noise amplifier, mainly because the amplifier has a wide input matching characteristic and a certain voltage gain, and a traditional active resistance negative feedback low-noise amplifier circuit with a two-stage cascade structure is shown in fig. 1. Signal-driven transistor M1Gate input, transistor M1Is connected with a load resistor RLThe signal is finally passed through transistor M1Is output. By adjusting M1The width-to-length ratio and the gate bias voltage of the transistor can be adjusted to flow through M1The magnitude of the current. To achieve broadband matching, M1Is passed through transistor M2And a current source I1The source follower circuit is composed of a transistor M2Of the source output, transistor M2The signal output by the source stage passes through a feedback resistor RFBack to transistor M1A gate electrode of (1). By adjusting the transistor M1And gate bias voltage, thereby changing M1Transconductance g ofmDifferent voltage gains can be obtained. By optimizing the transistor M1Transconductance g ofmAnd a feedback resistor RFThe value is such that its input impedance matches a 50 ohm antenna, resulting in good broadband input matching characteristics. To improve the reverse isolation and output matching characteristics of the circuit, transistor M1Drain output signal pass transistor M3And a current source I2The source follower circuit is composed of a transistor M3Is output from the source stage. The structure has wider input bandwidth and gain bandwidth, and simultaneously has certain voltage gain. However, the conventional active resistance degeneration low noise amplifier of the two-stage cascade structure has the following disadvantages:
the first is large power consumption, and the input impedance of the active resistance negative feedback low noise amplifier of the traditional two-stage cascade structure is approximately (1+ g)m2RF)/gm2(1+gm1RL) Wherein g ism1For input transistor transconductance, gm2For source follower transistor M2Transconductance of (1). In order to obtain a certain voltage gain and realize the matching of the input impedance and the 50-ohm antenna, the transconductance of an input tube must be improved by increasing the working current, and the feedback resistor R must be adjustedFAnd a load resistance RLThe value of (d) makes the above equation approximately equal to 50 ohms.
Secondly, the gain is low, and the gain of the active resistance negative feedback low noise amplifier of the traditional two-stage cascade structure is greatly determined by the common source transistor M1Due to the feedback resistance RFThe gain of the amplifier is lost, so that the amplifier has a certain voltage gain although the amplifier is a two-stage cascade amplifier, but the gain is low.
And thirdly, the isolation degree is poor, the isolation degree in the active resistance negative feedback low noise amplifier of the traditional two-stage cascade structure is poor, so that the signal at the output end returns to the input end through a feedback loop, and the requirement of the system on the isolation degree index is difficult to meet.
Finally, the noise is large, and the noise coefficient of the active resistance negative feedback low noise amplifier of the traditional two-stage cascade structure is large and often exceeds 4 dB.
Disclosure of Invention
The invention aims to overcome the defects of an active resistance negative feedback low noise amplifier with a traditional two-stage cascade structure, and provides an inductionless low-power consumption high-gain high-linearity broadband low noise amplifier, which can reduce the power consumption and noise of the amplifier and improve the gain, isolation and linearity of the amplifier on the basis of ensuring the broadband characteristics.
The technical scheme adopted by the invention is as follows: a non-inductive low-power consumption high-gain high-linearity broadband low-noise amplifier is characterized in that: the device is provided with an amplifying unit, a multiplexing unit, a cascade unit, a load unit, an input matching feedback unit, a current mirror unit and a reverse isolation output matching unit; the radio frequency input signal connects the amplifying unit, and multiplexing unit and cascade unit are connected respectively to the output of amplifying unit, and load cell, input matching feedback unit and reverse isolation output matching unit are connected respectively to the output of cascade unit, and the output that the input matches the feedback unit is feedback connection amplifying unit except that connecting current mirror unit, reverse isolation output matching unit output radio frequency output signal, wherein:
the amplifying unit comprises an NMOS tube M1NMOS transistor M1Is connected to a radio frequency input signal RFinTransistor M1The gate bias voltage of (a) is provided by the input matching feedback unit and the current mirror unit;
the multiplexing unit comprises a PMOS tube M2PMOS transistor M4Resistance RB1And a capacitor C1PMOS transistor M2The grid electrode of the NMOS tube M in the amplifying unit is connected1Grid of (D), PMOS tube M2Source electrode connecting PMOS tube M4Drain electrode and capacitor C1One end of (D) PMOS transistor M4Gate pass resistance RB1Connecting bias voltage VB1PMOS transistor M4Source electrode of (2) is connected with a capacitor C1And the other end of the first switch is connected with a power supply VDD;
the cascade unit comprises an NMOS tube M3NMOS transistor M3The source electrodes of the NMOS transistors M in the amplifying units are respectively connected1Drain electrode of (1) and PMOS transistor M in multiplexing unit2A drain electrode of (1);
the load unit comprises a resistor RLResistance RLOne end of the NMOS tube M in the cascade unit is connected3Drain electrode of (3), resistance RLThe other end of the power supply is connected with a power supply VDD;
the input matching feedback unit comprises an NMOS tube M5NMOS transistor M6Bias resistor R1A feedback resistor RFA feedback capacitor CFAnd a capacitor C2NMOS transistor M5The grid electrode of the NMOS tube M in the cascade unit3Drain electrode of (1), NMOS tube M5The drain electrode of the NMOS transistor is connected with a power supply VDD and an NMOS transistor M5Source electrode of the NMOS transistor M6Is connected to the drain and the gate of the transistor and is connected to a bias resistor R1One terminal of (1), a bias resistor R1The other end of the capacitor C is connected with a capacitor C2One end of (1) and NMOS tube M in the cascade unit3Gate of (1), capacitor C2The other end of the NMOS tube M is grounded6Source electrode of (1) is connected with a feedback resistor RFAnd a feedback capacitor CFOne end after parallel connection, a feedback resistor RFAnd a feedback capacitor CFThe other end of the parallel connection is connected with an NMOS tube M in the amplifying unit1A gate electrode of (1);
the current mirror unit comprises a resistor R2Resistance R2One end of the NMOS tube M is connected with the NMOS tube M in the input matching feedback unit6Source electrode of (1), resistor R2The other end of the first and second electrodes is grounded;
the reverse isolation output matching unit comprises a PMOS tube M7PMOS transistor M10NMOS transistor M8NMOS transistor M9Resistance RB2Resistance RB3AC feedback capacitor C3And an output matching resistor Rout(ii) a PMOS tube M7Source electrode and PMOS transistor M10The source electrodes are all connected with a power supply VDD and a PMOS tube M7Gate pass resistance RB2Connecting bias voltage VB2PMOS transistor M7Drain electrode of and PMOS transistor M10Grid electrode and NMOS tube M8Drain electrode of and AC feedback capacitor C3Are connected together, an NMOS transistor M8The grid electrode of the NMOS tube M in the cascade unit3Drain electrode of (1), NMOS tube M8Source electrode and PMOS transistor M10Drain electrode of (1), NMOS tube M9And output matching resistor RoutAre connected together at one end, NMOSPipe M9Grid electrode of the capacitor is connected with an alternating current feedback capacitor C3And the other end of the resistor R passes throughB3Connecting bias voltage VB3NMOS transistor M9Is grounded and outputs a matching resistor RoutAnd the other end outputs a radio frequency output signal RFout.
The invention has the advantages and obvious effects that: the CMOS process is adopted, great advantages are achieved in designing the radio frequency circuit, the circuit structure does not contain on-chip inductors, and the chip area is greatly reduced. In addition, the structure of the traditional broadband circuit is improved, the noise performance and the gain are improved, and simultaneously, the power consumption is greatly reduced, so that the circuit has a larger gain bandwidth, a wider input matching bandwidth, higher linearity and a smaller noise coefficient.
(1) And the power consumption is low. Under the requirement of realizing 50-ohm broadband input impedance matching, the power consumption can be greatly reduced by adopting the invention, the working current can be reduced to 8mA (under 3V power supply voltage) by adopting a current multiplexing technology, and the traditional active resistance negative feedback low-noise amplifier with a two-stage cascade structure needs about 13mA working current (under 3V power supply voltage).
(2) High gain. According to the invention, through a two-stage current multiplexing technology, under the condition of ensuring that the working current is not changed, a first-stage cascode amplifier is added in a radio frequency signal input amplification unit to form a multiplexing unit, so that the effective transconductance g of an input stage is greatly improvedmMeanwhile, a primary cascode amplifier is also adopted in the reverse isolation output matching unit to form a current multiplexing unit, and the adoption of the technologies greatly improves the voltage gain. Under the same power consumption condition (3V power supply voltage, working current is 8mA), compared with the traditional active resistance negative feedback low noise amplifier with a two-stage cascade structure and an amplifier only adopting the current multiplexing technology, the voltage gain of the amplifier is greatly improved, and the amplifier is shown in figure 4.
(3) High isolation. The invention adopts the cascade current multiplexing technology, greatly improves the whole isolation of the amplifier, and compared with the traditional active resistance negative feedback low noise amplifier with a two-stage cascade structure, the circuit isolation can be improved from the original 30dB to 50 dB.
(4) And (4) low noise. The invention adopts the current multiplexing technology, reduces the power consumption and brings extremely high gain, thereby being beneficial to reducing the noise coefficient of the circuit. Besides, the circuit cascades NMOS transistors M of the unit3The drain output signal of the transistor passes through the NMOS transistor M5、M6Formed source follower and feedback resistor RFA feedback capacitor CFIs fed to the signal input to provide an additional degree of freedom for the noise figure and input impedance so that the circuit can further reduce the noise figure while maintaining a match. Under the same power consumption condition (3V power supply voltage, working current is 8mA), compared with the traditional active resistance negative feedback low noise amplifier with a two-stage cascade structure and an amplifier only adopting the current multiplexing technology at the input stage, the noise coefficient of the amplifier is greatly reduced, and the amplifier is shown in figure 5.
(5) High linearity. The invention aims at the condition that the gain and the linearity of the traditional active resistance negative feedback amplifier are contradictory, and a resistor R is adopted in the circuit2The current mirror circuit replaces the traditional current mirror circuit, and a direct current feedback path and an alternating current feedback path of the circuit are the same branch circuit by adopting a feedback circuit structure with active resistors and capacitors connected in parallel, so that the input 1dB compression point P of the circuit is improvedin-1dB. Under the condition of the same power consumption (3V power supply voltage, working current is 8mA), compared with the traditional active resistance negative feedback low noise amplifier with a two-stage cascade structure, the P-type active resistance negative feedback low noise amplifier has the advantages thatin-1dBCan be improved by about 6dB, see fig. 6.
(6) The two-stage current multiplexing and active resistor-capacitor parallel negative feedback low-noise amplifier provided by the invention can greatly reduce the power consumption, improve the voltage gain, the isolation degree and the linearity and reduce the noise coefficient, and can be applied to a broadband radio frequency front end.
(7) The invention adopts CMOS process, has great advantages in designing radio frequency circuit, and the circuit structure does not contain on-chip inductor, thus greatly reducing chip area. In addition, the structure of the traditional broadband circuit is improved, the noise performance and the gain are improved, and simultaneously, the power consumption is greatly reduced, so that the circuit has a larger gain bandwidth, a wider input matching bandwidth, higher linearity and a smaller noise coefficient.
Drawings
FIG. 1 is a schematic circuit diagram of a conventional active resistive degeneration low noise amplifier in a two-stage cascade configuration;
FIG. 2 is a circuit block diagram of the low noise amplifier of the present invention;
FIG. 3 is a circuit schematic of the low noise amplifier of the present invention;
FIG. 4 is a comparison of voltage gain curves for the same power consumption compared to a conventional active resistor degeneration low noise amplifier with a two-stage cascade structure and an amplifier with only an input stage using current multiplexing;
FIG. 5 is a comparison of noise figure curves for the same power consumption compared to a conventional active resistive degeneration low noise amplifier with a two-stage cascade structure and an amplifier with only an input stage using current multiplexing;
FIG. 6 shows the 1dB compression point P of the input of the amplifier with the same power consumption, the active resistance negative feedback low noise amplifier of the two-stage cascade structure and the amplifier with the input stage adopting the current multiplexing technologyin-1dBAnd (5) comparing the curves.
Detailed Description
Referring to fig. 2, the radio frequency power amplifier is provided with an amplifying unit 1, a multiplexing unit 2, a cascade unit 3, a load unit 4, an input matching feedback unit 5, a current mirror unit 6 and a reverse isolation output matching unit 7, wherein a radio frequency input signal is connected with the amplifying unit 1, the output of the amplifying unit 1 is respectively connected with the multiplexing unit 2 and the cascade unit 3, the output of the cascade unit 3 is respectively connected with the load unit 4, the input matching feedback unit 5 and the reverse isolation output matching unit 7, the output of the input matching feedback unit 5 is also connected with the amplifying unit 1 in a feedback manner besides being connected with the current mirror unit 6, and the reverse isolation output matching unit 7 outputs a radio frequency output signal.
The radio frequency input signal is connected with the amplifying unit 1 and the input matching feedback unit 5, and is used for realizing 50-ohm broadband input impedance matching. The output of the amplifying unit 1 is connected with the multiplexing unit 2 and the cascade unit 3, a circuit formed by the cascade unit 3 and the load unit 4 completes the first amplification of an input signal, the signal after the first amplification is sent to the input end of the reverse isolation output matching unit 7 besides the input matching feedback unit 5, the second amplification of the signal is completed, wherein the output end of the input matching feedback unit 5 is connected with the input end of the amplifying unit 1, the other end of the input matching feedback unit is connected with the current mirror unit 6, and a radio frequency output signal is output from the output end of the reverse isolation output matching unit 7.
Referring to fig. 3, the amplifying unit 1 includes an NMOS transistor M1NMOS transistor M1Except for the connection to the radio frequency input signal RFinAnd a transistor M connected to the output of the input matching feedback unit 51Is provided by a circuit consisting of an input matching feedback unit 5 and a current mirror unit 6.
The multiplexing unit 2 comprises a PMOS tube M2PMOS transistor M4Resistance RB1And a capacitor C1PMOS transistor M2Grid of and NMOS transistor M of amplification unit 11Is connected with the grid electrode of the PMOS tube M2Source and PMOS transistor M4Is connected with the drain electrode of the PMOS tube M4Gate pass resistance RB1Connecting bias voltage VB1Can be adjusted by adjusting PMOS tube M4To adjust the current flowing through the load cell RLThereby adjusting the NMOS transistor M of the cascade unit3The dc level of the drain. PMOS tube M4The source electrode of the NMOS transistor M is connected with a power supply end VDD1And PMOS transistor M2A current-multiplexed common source amplifier and a capacitor C1One end of the PMOS tube M is connected with2The other end of the source electrode is connected with a power supply end VDD and a large capacitor C1Will PMOS pipe M2The source of (2) is ac grounded.
The cascade unit 3 comprises an NMOS tube M3NMOS transistor M3Respectively with the NMOS transistor M1Drain electrode of (1) and PMOS transistor M2Is connected with the drain electrode of the NMOS tube M1Drain electrode of (1) and PMOS transistor M2The drain output current of the transistor passes through the NMOS transistor M of the cascade unit 33Into the load cell RLThe effective cross-over of the LNA input stage is improved through the current multiplexing technology, and the inflow of the NMOS pipe M is reduced3And RLDirect current ofReduce RLThe voltage drop in the load unit, thereby effectively improving the swing of the output stage of the LNA load unit and further improving the linearity of the LNA. The load unit 4 includes a load resistor RL，RLOne end of and NMOS tube M3And the other end is connected to a power supply terminal VDD.
The input matching feedback unit 5 comprises an NMOS tube M5NMOS transistor M6Grid bias resistance R1Feedback resistance RFFeedback capacitance CFCapacitor C2. Cascaded unit NMOS pipe M3Drain and NMOS transistor M5Is connected with the grid of the NMOS tube M5The drain end of the NMOS transistor M is connected with a power supply end VDD5NMOS transistor M with source electrode connected with diode6The drain electrode of the NMOS transistor M is connected and the grid and the drain electrode are in short circuit6Working in saturation region, gate bias resistor R1One end of the NMOS tube M6Is connected with the grid electrode of the transistor, and the other end of the transistor is connected with the NMOS tube M of the cascade unit3Is connected to provide a dc bias voltage thereto. Feedback resistor RFAnd a feedback capacitor CFOne end of and NMOS tube M6Is connected with the source line of the amplifier unit, and the other end is connected with the NMOS tube M of the amplifier unit1Grid and multiplexing unit PMOS tube M2Are connected with each other, and cascade unit NMOS tubes M3The drain output signal of the transistor passes through the NMOS transistor M5And M6A source follower formed by a feedback resistor RFAnd a feedback capacitor CFThe formed feedback loop is fed into the radio frequency signal input end of the amplifier, and the feedback capacitor CFThe introduction of (2) can not only improve the broadband matching of the input end, but also partially compensate the high-frequency gain loss of the amplifier. The alternating current and direct current feedback of the feedback structure is the same path, a blocking capacitor is omitted, the area of a chip is reduced, the influence of a parasitic capacitor from the blocking capacitor to a substrate on the load of the source follower is avoided, and therefore the linearity of the amplifier is improved.
The current mirror unit 6 comprises a resistor R2One end of the NMOS tube is connected with an NMOS tube M6The other end of the source electrode is connected with a grounding end and is connected with a resistor R2The circuit replaces the traditional current mirror circuit, and further improves the linearity of the circuit.
The reverse isolation output matching unit 7 comprises a PMOS tube M7、M10NMOS transistor M8、M9Grid bias resistance RB2、RB3An AC feedback capacitor C3Output matching resistance Rout. PMOS tube M7Drain electrode of and NMOS tube M8Is connected with the drain electrode of the PMOS tube M7、M10The source electrode of the PMOS transistor M is connected with a power supply end VDD7Gate and bias resistor R ofB2Are connected at one end to RB2The other end of the resistor is connected with an external bias voltage VB2Connected NMOS transistor M9Drain electrode of and NMOS tube M8Is connected with the source electrode of the NMOS tube M9The source electrode of the NMOS transistor M is connected with the grounding end9Gate and bias resistor R ofB3Are connected at one end to RB3The other end of the resistor is connected with an external bias voltage VB3Are connected. NMOS tube M8、M9The second source electrode follower is formed to provide a reverse isolation function and an output matching function, and meanwhile, the PMOS transistor M7And NMOS transistor M8And a second current multiplexing branch is formed, so that the current flowing through the branch is reduced, and the power consumption of the circuit is further reduced. In order to improve the large-current load driving capability of the circuit and realize wider broadband matching, the PMOS tube M is used10The source electrode is connected with a power supply end VDD, and the grid electrode is connected with an NMOS tube M8Is connected with the drain electrode of the NMOS tube M8Is connected to the source of the capacitor C3One end of and NMOS tube M8Is connected with the drain electrode of the NMOS tube M, and the other end of the NMOS tube M is connected with the drain electrode of the NMOS tube9Are connected with each other, and cascade unit NMOS tubes M3From the NMOS transistor M8From the NMOS transistor M8The output signal is connected with the output matching adjusting resistor RoutThe radio frequency output signal is adjusted by the output matching resistor RoutAnd the other end of the same is output.
The radio frequency input signal is input by the amplifying unit 1, and the input impedance of the active resistance negative feedback low noise amplifier of the traditional two-stage cascade structure is approximate to (1+ g)m2RF)/gm2(1+gm1RL) Wherein g ism1For input of a transistorLead, gm2For source follower transistor M2Transconductance of (1). In order to obtain a certain voltage gain and realize the matching of the input impedance and the 50-ohm antenna, the transconductance of an input tube must be improved by increasing the working current, and the feedback resistor R must be adjustedFAnd a load resistance RLThe value of (d) makes the above equation approximately equal to 50 ohms. The invention respectively adopts the current multiplexing technology in the multiplexing unit 2 and the reverse isolation output matching unit 7 modules, reduces the power consumption and brings extremely high gain, and besides, the NMOS tube M of the cascade unit 33The drain output signal of the transistor passes through the NMOS transistor M5、M6Formed source follower and feedback resistor RFA feedback capacitor CFFed to a signal input terminal, a feedback capacitor CFThis provides an additional degree of freedom for the noise figure and input impedance so that the circuit can further reduce the noise figure while maintaining a match.
Referring to fig. 4, compared with the conventional active resistance degeneration low noise amplifier with the two-stage cascade structure and the amplifier with only the input stage adopting the current multiplexing technology, the low noise amplifier designed by the invention has the highest gain as shown in the result.
Referring to fig. 5, it can be seen that compared with the conventional active resistance negative feedback low noise amplifier with a two-stage cascade structure and the amplifier with only the input stage adopting the current multiplexing technology, the noise coefficient of the low noise amplifier designed by the present invention is the lowest.
The working current of the low-noise amplifier designed by the invention is about 8mA under the power supply voltage of 3V. The 3dB bandwidth of the low noise amplifier is 0.2-2.5GHz, the maximum voltage gain is about 20.7dB, and the in-band noise coefficient is about 2.5dB to 3.1 dB. By contrast, the performance of the active resistance negative feedback low noise amplifier is far superior to that of a traditional active resistance negative feedback low noise amplifier with a two-stage cascade structure and that of a low noise amplifier only adopting a current multiplexing technology at an input stage.
Claims (1)
1. A non-inductive low-power consumption high-gain high-linearity broadband low-noise amplifier is characterized in that: the low noise amplifier is provided with an amplifying unit, a multiplexing unit, a cascading unit, a load unit, an input matching feedback unit, a current mirror unit and a reverse isolation output matching unit; the radio frequency input signal connects the amplifying unit, and multiplexing unit and cascade unit are connected respectively to the output of amplifying unit, and load cell, input matching feedback unit and reverse isolation output matching unit are connected respectively to the output of cascade unit, and the output that the input matches the feedback unit is feedback connection amplifying unit except that connecting current mirror unit, reverse isolation output matching unit output radio frequency output signal, wherein:
the amplifying unit comprises an NMOS tube M1NMOS transistor M1Is connected to a radio frequency input signal RFinNMOS transistor M1The gate bias voltage of (a) is provided by the input matching feedback unit and the current mirror unit;
the multiplexing unit comprises a PMOS tube M2PMOS transistor M4Resistance RB1And a capacitor C1PMOS transistor M2The grid electrode of the NMOS tube M in the amplifying unit is connected1Grid of (D), PMOS tube M2Source electrode connecting PMOS tube M4Drain electrode and capacitor C1One end of (D) PMOS transistor M4Gate pass resistance RB1Connecting bias voltage VB1PMOS transistor M4Source electrode of (2) is connected with a capacitor C1And the other end of the first switch is connected with a power supply VDD;
the cascade unit comprises an NMOS tube M3NMOS transistor M3The source electrodes of the NMOS transistors M in the amplifying units are respectively connected1Drain electrode of (1) and PMOS transistor M in multiplexing unit2A drain electrode of (1);
the load unit comprises a resistor RLResistance RLOne end of the NMOS tube M in the cascade unit is connected3Drain electrode of (3), resistance RLThe other end of the power supply is connected with a power supply VDD;
the input matching feedback unit comprises an NMOS tube M5NMOS transistor M6Bias resistor R1A feedback resistor RFA feedback capacitor CFAnd a capacitor C2NMOS transistor M5The grid electrode of the NMOS tube M in the cascade unit3Drain electrode of (1), NMOS tube M5The drain electrode of the NMOS transistor is connected with a power supply VDD and an NMOS transistor M5Source electrode of the NMOS transistor M6Is connected to the drain and the gate of the transistor and is connected to a bias resistor R1One terminal of (1), a bias resistor R1The other end of the capacitor C is connected with a capacitor C2One end of (1) and NMOS tube M in the cascade unit3Gate of (1), capacitor C2The other end of the NMOS tube M is grounded6Source electrode of (1) is connected with a feedback resistor RFAnd a feedback capacitor CFOne end after parallel connection, a feedback resistor RFAnd a feedback capacitor CFThe other end of the parallel connection is connected with an NMOS tube M in the amplifying unit1A gate electrode of (1);
the current mirror unit comprises a resistor R2Resistance R2One end of the NMOS tube M is connected with the NMOS tube M in the input matching feedback unit6Source electrode of (1), resistor R2The other end of the first and second electrodes is grounded;
the reverse isolation output matching unit comprises a PMOS tube M7PMOS transistor M10NMOS transistor M8NMOS transistor M9Resistance RB2Resistance RB3AC feedback capacitor C3And an output matching resistor Rout(ii) a PMOS tube M7Source electrode and PMOS transistor M10The source electrodes are all connected with a power supply VDD and a PMOS tube M7Gate pass resistance RB2Connecting bias voltage VB2PMOS transistor M7Drain electrode of and PMOS transistor M10Grid electrode and NMOS tube M8Drain electrode of and AC feedback capacitor C3Are connected together, an NMOS transistor M8The grid electrode of the NMOS tube M in the cascade unit3Drain electrode of (1), NMOS tube M8Source electrode and PMOS transistor M10Drain electrode of (1), NMOS tube M9And output matching resistor RoutAre connected together, an NMOS transistor M9Grid electrode of the capacitor is connected with an alternating current feedback capacitor C3And the other end of the resistor R passes throughB3Connecting bias voltage VB3NMOS transistor M9Is grounded and outputs a matching resistor RoutAnd the other end of which outputs a radio frequency output signal RFout。
Priority Applications (1)
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| CN108170194B (en) * | 2017-12-19 | 2020-07-28 | 重庆湃芯创智微电子有限公司 | High-energy-efficiency voltage driver for terminal equipment of Internet of things |
| CN109743024A (en) * | 2018-10-31 | 2019-05-10 | 西安电子科技大学 | A kind of integrated circuit of current multiplexing type gm-boost low-noise amplifier |
| CN110957981B (en) * | 2019-11-28 | 2024-03-15 | 上海磐启微电子有限公司 | Gain and impedance matching separated inductance-free low-noise amplifier |
| CN111682851B (en) * | 2020-08-13 | 2020-12-04 | 成都嘉纳海威科技有限责任公司 | Anti-mismatch broadband low-noise amplifier for 5G communication |
| CN112653396B (en) * | 2020-12-31 | 2023-04-07 | 电子科技大学 | Ultra-wideband bidirectional amplifier based on 500nm GaAs pHEMT process |
| CN113346848A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | HBT (heterojunction bipolar transistor) process-based high-three-order intermodulation point medium-power radio-frequency amplification circuit |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832335A (en) * | 2006-04-13 | 2006-09-13 | 复旦大学 | CMOS superwide band low noise discharger |
| US7432763B2 (en) * | 2005-01-05 | 2008-10-07 | Broadcom Corporation | Gain boosting for tuned differential LC circuits |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN102361435A (en) * | 2011-10-28 | 2012-02-22 | 电子科技大学 | Variable gain broadband low-noise amplifier |
| WO2012048544A1 (en) * | 2010-10-15 | 2012-04-19 | 中兴通讯股份有限公司 | Amplifier and implementation method thereof |
| CN102497167A (en) * | 2011-12-09 | 2012-06-13 | 电子科技大学 | Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation |
| CN103117712A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| CN104539244A (en) * | 2014-12-23 | 2015-04-22 | 天津大学 | Distortion and noise cancellation based high-linearity CMOS broadband low noise amplifier |
| CN106230389A (en) * | 2016-09-27 | 2016-12-14 | 无锡中科微电子工业技术研究院有限责任公司 | high-gain low-noise amplifier |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6452456B1 (en) * | 2000-11-16 | 2002-09-17 | Texas Instruments Incorporated | Fast-setting, low power, jammer insensitive, biasing apparatus and method for single-ended circuits |
-
2017
- 2017-04-24 CN CN201710270401.2A patent/CN107248850B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7432763B2 (en) * | 2005-01-05 | 2008-10-07 | Broadcom Corporation | Gain boosting for tuned differential LC circuits |
| CN1832335A (en) * | 2006-04-13 | 2006-09-13 | 复旦大学 | CMOS superwide band low noise discharger |
| WO2012048544A1 (en) * | 2010-10-15 | 2012-04-19 | 中兴通讯股份有限公司 | Amplifier and implementation method thereof |
| CN102332868A (en) * | 2011-10-18 | 2012-01-25 | 东南大学 | Low-power-consumption wideband low-noise amplifier |
| CN102361435A (en) * | 2011-10-28 | 2012-02-22 | 电子科技大学 | Variable gain broadband low-noise amplifier |
| CN102497167A (en) * | 2011-12-09 | 2012-06-13 | 电子科技大学 | Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation |
| CN103117712A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| CN104539244A (en) * | 2014-12-23 | 2015-04-22 | 天津大学 | Distortion and noise cancellation based high-linearity CMOS broadband low noise amplifier |
| CN106230389A (en) * | 2016-09-27 | 2016-12-14 | 无锡中科微电子工业技术研究院有限责任公司 | high-gain low-noise amplifier |
Non-Patent Citations (5)
| Title |
|---|
| "3～5 GHz超宽带无电感CMOS低噪声放大器设计";王巍等;《微电子学与计算机》;20120630;第29卷(第6期);第130页到第133页及第137页 * |
| "Analysis，design and X-band implementation of a self-biased active feedback Gm-boosted common-gate CMOS LNA";Ibrahim Ramez Chamas等;《IEEE Transactions on Microwave Theory and Techniques》;20090331;第57卷(第3期);第542页到第551页 * |
| "CMOS工艺的低电压低噪声放大器研究";刘宝宏;《中国博士学位论文全文数据库•信息科技辑》;20120715;第2012年卷(第7期);I135-77 * |
| "CMOS毫米波低功耗超宽带共栅低噪声放大器";杨格亮等;《红外与毫米波学报》;20141231;第33卷(第6期);第584页到第590页 * |
| "Series peaked noise matched gm-boosed 3.1～10.6 GHz CG CMOS differential LNA for UWB WiMedia";Khurram M等;《Electronics Letters》;20111124;第47卷(第24期);第1346页到第1348页 * |
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