CN102497167A - Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation - Google Patents
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Abstract
The invention discloses a radio-frequency ultra-wideband low-noise amplifier based on inductance compensation, relating to a radio-frequency integrated circuit technology. The radio-frequency ultra-wideband low-noise amplifier mainly consists of an input amplification-stage circuit, a feedback-stage circuit, a matching-stage circuit, a load-stage circuit, a bias-stage circuit and an output buffering-stage circuit jointly. According to the radio-frequency ultra-wideband low-noise amplifier, both the input matching stage and the load stage are subjected to inductance compensation, and the sensitivity of the low-noise amplifier on the technology is reduced by adopting a current multiplexing technology with independent bias, so that the performance is more stable, the ultra-wideband is also realized, and the working frequency range is 0.1-12GHz; meanwhile, the radio-frequency ultra-wideband low-noise amplifier gets favorable indexes, such as noise, linearity, gain, power consumption and the like and is suitable for an ultra-wideband multi-standard wireless communication receiving system.
Description
Technical field
The invention belongs to the RF IC design field, be applied to the radio-frequency front-end of receiver, is a kind of ultra-wideband low-noise amplifier that is applicable to the various wireless communication standard, is applicable in the ultra wideband receiver system.
Background technology
Along with the development of electronics and information industry, circuit integration has become the direction of microelectronic industry talent joint research, and shared status can not be substituted and radio frequency chip is in the communications field.In radio frequency receiver, generally as the first order of receiver, its operating frequency is often very high for low noise amplifier, needs to consider the wave reflection characteristic; Simultaneously low noise amplifier need provide enough gains to overcome the noise that subsequent conditioning circuit brings, and the quality of noise characteristic has determined the sensitivity of receiver, explains that low noise amplifier must be able to handle the very faint signal near noise level; Low noise amplifier will need be handled the signal near the very high level of transmitting antenna simultaneously in addition; Guarantee the reception large-signal and do not produce distortion; Therefore the linearity is an important indicator of low noise amplifier, and the quality of the performance of a low noise amplifier plays crucial effects to the performance of whole receiver.Owing to be connected with antenna, so the input signal source of low noise amplifier shows as a specific impedance usually, for example 50 Ω or 75 Ω.Low noise amplifier has determined its researching value in the role of receiver, and the quality of wideband low noise amplifier performance is weighed by many indexs such as bandwidth, noise factor, reflection coefficient, the linearity, gain, power consumptions jointly.
Narrow-band low-noise amplifier can only be handled the radiofrequency signal of some frequency ranges; Can not meet the demands in some field; For example the software wireless electrical domain if adopt a plurality of narrow-band low-noise amplifiers to realize, can take very big chip area so; Also make circuit complicated, so wideband low noise amplifier becomes the focus of present RF IC research.Wideband low noise amplifier can be handled the radiofrequency signal of a plurality of frequency ranges, thereby has practiced thrift cost.
Super-broadband tech has become the focus of research since proposing, ultra broadband is defined as: the upper limiting frequency f of bandwidth
MaxWith lower frequency limit f
MinDifference divided by centre frequency f
0Value K greater than 125%, surpass 1.5GHz with Time Bandwidth, promptly satisfy
f
max-f
min＞1.5G (2)
And want to realize the receiver of various modes communication standard just to need low noise amplifier can handle the radiofrequency signal of a plurality of frequency ranges, guarantee the linearity that when handling the signal of these frequency ranges, has lower noise factor and can receive simultaneously.
Traditional wideband low noise amplifier is as shown in Figure 1, and this circuit is active feedback arrangement wideband low noise amplifier, and (following device nmos pass transistor is represented with MN; Device PMOS transistor is represented with MP), device MN1, MN2 forming circuit cascade amplifying stage, RL is the load of amplifier; Device R f, MN4 are that low noise amplifier provides active feedback in order to realize input impedance matching; Vb1 is that MN3 provides biasing, like this can be for MN4 provides electric current, MP1 play for load resistance RL shunting to reduce the effect of pressure drop above it; But this structure is difficult to realize simultaneously high-gain and very wide bandwidth; Reason is that shunting transistor MP1 will flow through bigger electric current, needs bigger device size, and it is very big to make that drain terminal arrives the parasitic capacitance on ground.For this reason, the invention provides a kind of new structure and realize ultra-wideband low-noise amplifier.
Summary of the invention
The objective of the invention is in order in the radio frequency ultra wide band range, to realize higher gain; The spy provides the ultra-wideband low-noise amplifier of a kind of 0.1-12GHz based on inductance compensation; To overcome the deficiency of prior art, learn that according to (1) formula K value of the present invention is about 1.967, far above other papers and wideband low noise amplifier that patent designed; Obtained performances such as good broadband input coupling, noise factor, the linearity simultaneously, can be applicable in the ultra-wideband communication system.
For the ultra-wideband low-noise amplifier of realizing that bandwidth is enough big; The present invention has adopted new technical scheme, and is as shown in Figure 2: ultra-wideband low-noise amplifier of the present invention mainly is made up of input amplifying stage, feedback stage, matching stage, load stage, bias stage and output buffer stage circuit jointly:
The input amplifying stage is made up of nmos pass transistor MN1, MN2 and PMOS transistor MP1 jointly, in order to realize the enlarging function to input signal;
Feedback stage is made up of nmos pass transistor MN3, resistance R _ f and capacitance C1, C2 jointly; Be connected between the output and input of input amplifying stage; Be used in circuit, realizing that feedback obtains the input impedance of equivalence, thereby can make matching stage realize input impedance matching;
Matching stage is made up of the pad parasitic capacitance CP that has esd protection, sheet internal inductance L1, feedback device MN3, Rf, C1, C2 jointly; Can realize input impedance matching like this, thereby obtain good input reflection coefficient (it is generally acknowledged that reflection coefficient is the acceptable value less than-10dBm);
Load stage is made up of resistance R L, sheet internal inductance L2, capacitor C L, thereby RL, L2 play the effect that provides load to realize normal amplifying signal for low noise amplifier, the electric capacity that CL is introduced for simulation low noise amplifier next stage (frequency mixer);
Bias stage is by current source I1, I2; Nmos pass transistor MN4, MN5, MN6, MN7, PMOS transistor MP2, resistance R 1, R2, R3 form jointly; Play the effect that bias current is provided for low noise amplifier, so that the low noise amplifier individual channel can operate as normal;
The output buffer stage is made up of nmos pass transistor MN8, resistance R 4, can the output DC position be adjusted to suitable value, also can carry out impedance matching to output port, is convenient to the independent test after the low noise amplifier flow.
Input amplifying stage and load stage realize input signal Vin is amplified; Input amplifying stage output connects feedback stage, load stage and output buffer stage; Signal is amplified the input amplifying stage after the drain terminal output of MN2; Feed back to the input of importing amplifying stage through feedback stage, the drain terminal output signal flow of MN2 goes into to export buffer stage simultaneously, the output signal Vout of output low noise amplifier; Bias stage is connected with input amplifying stage, feedback stage, for importing amplifying stage and feedback stage suitable bias current is provided.
Among the present invention; VDD, GND are respectively the DC potential that low noise amplifier provides power supply 1.2V and 0V; Under the rational situation of bias stage circuit design; Can realize good input matching effect through CP, L1, MN3, Rf, C1, C2, so input signal Vin can get into amplification grade circuit, and amplify through MN1, MP1, MN2; The grid buffering back that gets into MN8 from the drain terminal of MN2 output back is Vout from the source output of MN8, and the ratio of output signal Vout and input signal Vin is the gain of low noise amplifier.
Ultra-wideband low-noise amplifier proposed by the invention compare improved place with traditional low noise amplifier shown in Figure 1 and advantage following:
Not as traditional wideband low noise amplifier at the load resistance two ends shunting of parallel connection MOS transistor, can eliminate shunting MOS transistor drain terminal in the conventional art like this to the electric capacity on ground, thereby improve bandwidth to a certain extent;
2. adopted the current multiplexing technology at the input amplifying stage; The electric current that promptly flows through MP1 flows through MN1 simultaneously, so not only can increase the mutual conductance of amplifying stage, improves the gain of low noise amplifier; Simultaneously MP1 divide the part electric current of MN1; Alleviated the pressure drop above the load resistance RL, can obtain more rational output DC position, making under low supply voltage can operate as normal;
With other papers in or current multiplexing technology in the patent different; Current multiplexing technology of the present invention has adopted two independently biasings; Be MN1, MP1 owing to capacitor C 1, C2 have relatively independent biasing at a distance from straight effect, such benefit is that the electric current of MN1 and MP1 can be relatively independent, and does not receive the influence of process deviation; After the electric current that flows through MN1, MP1 is confirmed; Pressure drop substantially constant above the load resistance RL so like this can be for feedback device MN3 provides metastable DC potential, thereby makes the work that feedback control loop is more stable;
4. inductance L 1 is added in before the input amplifying stage of low noise amplifier, has not only done certain contribution for coupling, can compensate the electric capacity of input simultaneously, reaches the purpose of the bandwidth that increases low noise amplifier;
5. inductance L 2 is added in the load stage of low noise amplifier, can the output limit of low noise amplifier be compensated, and makes the output limit move to the direction away from initial point, reaches the purpose of the bandwidth that increases low noise amplifier, has also strengthened the flatness of gain;
6. the output buffer stage is used for the output signal is cushioned, and can the output DC position be adjusted to suitable value, also can mate output port, is convenient to the independent test after the low noise amplifier flow.
Ultra-wideband low-noise amplifier of the present invention has enough big bandwidth: in the 0.1-12GHz broadband range, all can realize good input coupling; Indexs such as noise, the linearity, gain, power consumption all meet the standard (concrete performance will provide) of typical ultra-wideband low-noise amplifier design in execution mode simultaneously, are applicable to wireless broadband communication.
Description of drawings
Fig. 1 is traditional wideband low noise amplifier.
Fig. 2 is the circuit theory diagrams of ultra-wideband low-noise amplifier of the present invention.
Fig. 3 is the input reflection coefficient simulation curve of ultra-wideband low-noise amplifier of the present invention.
Fig. 4 is the gain simulation curve of ultra-wideband low-noise amplifier of the present invention.
Fig. 5 is the noise factor simulation curve of ultra-wideband low-noise amplifier of the present invention.
Fig. 6 is the three rank input intermodulation point simulation curve of ultra-wideband low-noise amplifier of the present invention.
Embodiment
Below in conjunction with Fig. 2 ultra-wideband low-noise amplifier of the present invention is done further explanation.
Ultra-wideband low-noise amplifier of the present invention mainly is made up of input amplifying stage, feedback stage, matching stage, load stage, bias stage and output buffer stage circuit jointly, and the annexation and the role of each several part are following:
Supply voltage VDD is 1.2V, and GND is 0V;
The input amplifying stage is made up of nmos pass transistor MN1, MN2 and PMOS transistor MP1 jointly, in order to the enlarging function of realization to input signal, and the source ground of MN1, drain electrode is connected with the drain electrode of MP1 and the source electrode of MN2 respectively, and the source electrode of MP1 connects power vd D;
Feedback stage is made up of nmos pass transistor MN3, resistance R _ f and capacitance C1, C2 jointly; The drain electrode of MN3 meets power vd D; Grid connects the output of input amplifying stage, and source electrode connects feedback resistance Rf, and is connected to the input of input amplifying stage through capacitance C1, C2; Be used in circuit, realizing that feedback obtains the input impedance of equivalence, thereby make matching stage realize input impedance matching;
Matching stage is made up of the pad parasitic capacitance CP that has esd protection, sheet internal inductance L1, feedback device MN3, Rf, C1, C2 jointly; The capacitive of 1 pair of input of inductance L compensates; Choose suitable inductance value and can realize the broadband input impedance matching, thereby reach the purpose of the good input reflection coefficient of in needed frequency band acquisition;
Load stage is made up of resistance R L, sheet internal inductance L2, capacitor C L; Thereby RL, L2 play to low noise amplifier provides load and realize the effect of normal amplifying signal; Inductance L 2 is connected with resistance R L, the electric capacity that CL is introduced for simulation low noise amplifier next stage (frequency mixer);
The biasing part is by current source I1, I2; Nmos pass transistor MN4, MN5, MN6, MN7, PMOS transistor MP2, resistance R 1, R2, R3 form jointly; Bias stage is connected to the grid of MN1 and MP1 in the input amplifying stage respectively through resistance R 1, R2; Play the effect that bias current is provided for low noise amplifier, so that the low noise amplifier individual channel can operate as normal, input amplifying stage, the required electric current of feedback stage provide by bias stage;
The output buffer stage is made up of nmos pass transistor MN8, resistance R 4; The grid of MN8 is connected with the output (drain electrode of MN2) of input amplifying stage; The source electrode of MN8 links to each other with resistance R 4; Can the output DC position be adjusted to suitable value, also can carry out impedance matching, be convenient to the independent test after the low noise amplifier flow output port.
Vin is a radio-frequency input signals, under the good situation of input coupling, through getting into the grid of MN1, MP1 behind C1, the C2; Import out the source end of entering MN2 from the drain terminal of MN1 and MP1, and from the drain terminal output of MN2, be equivalent to MN1 like this, MP1 has used the current multiplexing technology; Simultaneously constituted mutual conductance enhancement mode cascade amplifying stage with MN2; Help improving gain, bank tube MN2 is used for strengthening the reverse isolation of low noise amplifier altogether, suppresses Miller effect; Reduce the local oscillation signal leakage of subsequent conditioning circuit (like frequency mixer) generation and reduced the feedback effect of output, improved the stability of circuit to input.
The drain terminal of MN2 is connected with load resistance RL and inductance L 2; Can realize amplification like this to input signal; 2 pairs of high-frequency gains of inductance L have certain compensating action; Thereby can expand the bandwidth of low noise amplifier, L2 carried out suitable value can make ultra-wideband low-noise amplifier have good gain flatness.
There is a feedback control loop between the drain terminal of MN2 to the input signal port; Be made up of MN3, Rf, because transistor has parasitic capacitance, esd protection also presents capacitive; In order to compensate the capacitive of input; The present invention has used inductance L 1 to do compensation to a certain degree, can realize the coupling that input is good like this, makes being reflected in the acceptable scope of input signal Vin.The condition of low noise amplifier input impedance matching does
1/g
mn3+R
f＝Rs(1+A
v) (3)
Rs is source input impedance, Rs value 50 Ω among the present invention, g
Mn3Be the mutual conductance of transistor MN3, R
fBe the resistance of band internal resistance Rf in the feedback control loop, A
vBe the input signal of MN2 drain terminal and the ratio of input signal.Can know, then have if want Satisfying Matching Conditions according to (3) formula
R
f＜Rs(1+A
v) (4)
The drain terminal of MN2 is connected to the grid of buffer stage MN8, and the source electrode of MN8 connects resistance R 4, and output signal Vout is a radio frequency output signal, and Vout exports from the junction between resistance R 4 and the MN8.Through regulating the output impedance of buffer stage MN8 and R4; Make impedance matching with tester; Can after flow, test low noise amplifier separately, buffer stage has further strengthened the isolation of low noise amplifier simultaneously, and buffer stage has the decay of 2dB among the present invention to gain.
If will realize importing the amplifying stage operate as normal, then need set up suitable quiescent point.The present invention adopts capacitance C1, C2 to make input amplifying stage transistor MN1, MP1 have independently biasing, thereby does not receive the influence of factors such as technology; Current source I1, transistor MN6 and resistance R 1 provide suitable bias current for MN1, to accomplish the effect of current mirror; Transistor MN7, MP2 and resistance R 2, R3 are that MP1 provides suitable bias current, to accomplish the effect of current mirror; Current source I2, transistor MN4, MN5 are that feedback control loop provides stable electric current, accomplish the effect of current mirror, thereby guarantee that MN3 has constant relatively mutual conductance.
Capacitor C L is a load capacitance, is used for simulating the electric capacity of the grid of next stage (frequency mixer) to ground, and it is 100fF that CL is set during emulation.
The simulation curve of the input reflection coefficient of ultra-wideband low-noise amplifier of the present invention (S11) is as shown in Figure 3.Input reflection coefficient all less than-10dB, satisfies the requirement of general low noise amplifier input impedance matching in the 0.1-12GHz frequency range.(Gain) is as shown in Figure 4 for gain curve.In the 0.1-12GHz frequency range, gaining changes between 15.26-16.76dB, has realized good gain flatness.
(Noise Figure) is as shown in Figure 5 for ultra-wideband low-noise amplifier noise factor of the present invention; Noise factor is between 2.3-3.5dB in the 0.1-12GHz frequency range; And in the 0.2-8GHz frequency range less than 2.8dB, satisfy the low noise requirement of ultra-wideband low-noise amplifier fully.
For low noise amplifier; The linearity also is vital, it determined low noise amplifier the maximum intensity of receptible signal, low noise amplifier of the present invention is under the power supply of 1.2V supply voltage; The simulation curve of three rank input intermodulation points (IIP3) is as shown in Figure 6; In the 0.1-12GHz frequency range, IIP3 changes between-the 4.4dBm at-10dBm, satisfies the linearity requirement of general low noise amplifier.
In sum, ultra-wideband low-noise amplifier of the present invention uses 65nm RFCMOS technology to carry out simulating, verifying, can operate as normal in the 0.1-12GHz bandwidth; The input matching performance is good; The noise and the linearity all can satisfy the operate as normal index, and main amplifying stage electric current is 5.54mA, and the feedback stage electric current is 1.73mA; Back buffer stage electric current is 1.38mA, consumes total current and is about 8.65mA.
What should explain at last is that the present invention is not only applicable to work in the low noise amplifier in the 0.1-12GHz bandwidth range; The present invention proposes concrete scheme and simulating, verifying; Therefore only otherwise break away from the enforcement thought among the present invention, all belong in the claim scope of the present invention.
Claims (3)
1. radio frequency ultra-wideband low-noise amplifier based on inductance compensation; Comprise input amplifying stage, feedback stage, matching stage, load stage, bias stage and output buffer stage; It is characterized in that adopting in this amplifier circuit in low noise inductance compensation to be implemented in the comparatively smooth high-gain in the ultra wide band range, circuit structure and the function of forming this low noise amplifier are following:
Described input amplifying stage is made up of nmos pass transistor MN1, MN2 and PMOS transistor MP1 jointly, in order to realize the enlarging function to input signal;
Described feedback stage is made up of nmos pass transistor MN3, resistance R _ f and capacitor C 1, C2 jointly; Be connected between the output and input of input amplifying stage; Be used in circuit, realizing that feedback obtains the input impedance of equivalence, thereby can make matching stage realize input impedance matching;
Described matching stage is made up of the pad parasitic capacitance CP that has esd protection, sheet internal inductance L1, feedback device MN3, Rf, C1, C2 jointly, can realize input impedance matching like this, thereby obtains good input reflection coefficient;
Described load stage is made up of resistance R L, sheet internal inductance L2, capacitor C L, thereby RL, L2 play the effect that provides load to realize normal amplifying signal for low noise amplifier, the electric capacity that CL is introduced for simulation low noise amplifier next stage (frequency mixer);
Described bias stage is by current source I1, I2; Nmos pass transistor MN4, MN5, MN6, MN7, PMOS transistor MP2, resistance R 1, R2, R3 form jointly; Play the effect that bias current is provided for low noise amplifier, so that the low noise amplifier individual channel can operate as normal;
Described output buffer stage is made up of nmos pass transistor MN8, resistance R 4, can the output DC position be adjusted to suitable value, also can carry out impedance matching to output port, is convenient to the independent test after the low noise amplifier flow;
Input amplifying stage and load stage realize input signal Vin is amplified; Input amplifying stage output connects feedback stage, load stage and output buffer stage; Signal is amplified the input amplifying stage after the drain terminal output of MN2; Feed back to the input of importing amplifying stage through feedback stage, the drain terminal output signal flow of MN2 goes into to export buffer stage simultaneously, the output signal Vout of output low noise amplifier; Bias stage is connected with input amplifying stage, feedback stage, for importing amplifying stage and feedback stage suitable bias current is provided.
2. the radio frequency ultra-wideband low-noise amplifier of inductance compensation according to claim 1; It is characterized in that C1, C2 in feedback stage and the matching stage are capacitance; Make transistor MN1 and MP1 have relatively independent biasing, such benefit is that the electric current of MN1 and MP1 can be relatively independent, and does not receive the influence of process deviation; After the electric current that flows through MN1, MP1 is confirmed, the pressure drop substantially constant above the load resistance RL so.
3. the radio frequency ultra-wideband low-noise amplifier of inductance compensation according to claim 1 is characterized in that matching stage and load stage have adopted inductance L 1 and L2 to carry out frequency compensation respectively, thereby can realize super large bandwidth of the present invention.
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| CN103532497A (en) * | 2013-10-18 | 2014-01-22 | 中国科学技术大学 | Ultra-wide-band low-noise amplifier adopting inductance compensation technology |
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| CN104158500A (en) * | 2013-05-14 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
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