CN107151795A - A kind of copper-molybdenum alloy film etching solution - Google Patents
A kind of copper-molybdenum alloy film etching solution Download PDFInfo
- Publication number
- CN107151795A CN107151795A CN201710407480.7A CN201710407480A CN107151795A CN 107151795 A CN107151795 A CN 107151795A CN 201710407480 A CN201710407480 A CN 201710407480A CN 107151795 A CN107151795 A CN 107151795A
- Authority
- CN
- China
- Prior art keywords
- etching solution
- copper
- acid
- molybdenum alloy
- alloy film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention relates to a kind of copper-molybdenum alloy film etching solution, its pH is 1 ~ 2, the composition of etching solution includes hydrogen peroxide, 0.1% ~ 10% inorganic acid, 0.5% ~ 10% sulfate, 0.5% ~ 15% Inorganic Ammonium salt buffer, 0.01% ~ 10% alcamines pH adjusting agent, 0.1% ~ 10% stabilizer of hydrogen peroxide, 0.1% ~ 5% metal ion chelation agent, 0.01% ~ 5% metal inhibitor for accounting for etching solution gross mass 1% ~ 5%, and surplus is deionized water.Etching solution of the present invention adds a small amount of hydrogen peroxide, it is aided with metal inhibitor and inorganic acid, the materials such as sulfate, Inorganic Ammonium salt buffer are added simultaneously, so that etching liquid of the present invention ties up to pH changes in etching process and maintained all the time in the range of+0.3, etching solution system of the present invention can maintain the stabilization of pH in etching process, being avoided that pH is too low again causes to etch uneven phenomenon, content of copper ion is during 0ppm ~ 8000ppm, etch-rate is constant, etching CD and the angle of gradient are basically unchanged, noresidue is etched, the high-precision processing request of client is met.
Description
Technical field
The present invention relates to metal etch liquid field, more particularly to a kind of copper molybdenum alloy belongs to film etching solution.
Background technology
In current advanced lines liquid crystal panel production technology, panel size maximization, grid and metal wiring use copper alloy,
Compared with conventional aluminium alloy, resistance reduction and no environmental problem.But the adhesion of copper and glass baseplate and dielectric film is relatively low, lead to
Titanium, molybdenum etc. often are used as lower film metal, so needing copper-molybdenum alloy film etching solution, etching film layer structure is copper/molybdenum
Alloy.During etching copper molybdenum alloy, general molybdenum is more difficult to etching than copper, and etch-rate is far below the etch-rate of copper.It is existing
There is copper molybdenum alloy etching solution generally using addition fluoride or greatly improve hydrogen peroxide content.Publication No.
Copper molybdenum alloy disclosed in the Chinese patents such as CN103890232A, CN103668208A, CN101684557A, CN102703902A loses
Carve in liquid, almost all adds the fluoride of 0.01%~5% mass fraction, to improve the etching speed of molybdenum alloy, reduce tail
Ba Changdu, removes the molybdenum alloy residue produced in etching, but addition fluoride has the following disadvantages：Firstth, fluoride electricity
Separate out fluorine ion big for environment pollution, etching waste liquor processing cost is high；Secondth, fluorine ion toxicity is big, the operation wind of operating personnel
Danger is high；3rd, fluorine ion corrosivity is high, can etch glass baseplate.Publication No. CN104498951A Chinese patent is disclosed
A kind of dioxygen water system copper-molybdenum alloy film etching solution, the main component of the etching solution includes accounting for etching solution gross weight 1~35%
Hydrogen peroxide, 0.05~5% inorganic acid, 0.1~5% stabilizer of hydrogen peroxide, 0.1~5% metal-chelator, 0.1
~5% etching additive, 0.1~5% surfactant and 0.1~5% defoamer, surplus is deionized water.The system
Etching solution content of hydrogen peroxide when being less than or equal to 5%, have a residual, content of hydrogen peroxide need to be improved to more than 10%, but mistake
When oxidation hydrogen content is larger, hydrogen peroxide is unstable, in etching process, as metal ion content is raised, promotes hydrogen peroxide
Fast decoupled, and substantial amounts of heat is released, cause etching uneven, while may set off an explosion, cause casualties and company's wealth
Production loss；In addition, with the addition of defoamer in system, silicon spot is easily produced on the glass substrate.
The content of the invention
The technical problems to be solved by the invention are to overcome the deficiencies in the prior art there is provided a kind of content of hydrogen peroxide is low,
Safe, stability is good, and etching performance is excellent, noresidue, meets the copper-molybdenum alloy film etching solution of high-precision processing request.
In order to solve the above technical problems, the present invention is adopted the following technical scheme that：
A kind of copper-molybdenum alloy film etching solution, the pH of the etching solution is 1~2, and the composition of the etching solution includes accounting for institute
State the hydrogen peroxide of etching solution gross mass 1%~5%, 0.1%~10% inorganic acid, 0.5%~10% sulfate,
0.5%~15% Inorganic Ammonium salt buffer, 0.01%~10% alcamines pH adjusting agent, 0.1%~10% peroxide
Change stabilized hydrogen agent, 0.1%~5% metal ion chelation agent, 0.01%~5% metal inhibitor, surplus is deionized water.
It should be noted that hydrogen peroxide is a kind of excellent oxidant, energy the efficient oxidation copper-molybdenum metal, and it is etched liquid
Middle inorganic acid solution, reaches etching purpose.It is completely pollution-free and hydroperoxidation accessory substance only has water and oxygen.In consideration of it,
A small amount of hydrogen peroxide of mass percent 1%~5% is added in the etching solution of the present invention, copper molybdenum alloy can be etched well,
Ensure the uniform of etching, the safety and stability of etching solution is can guarantee that again.
It should be noted that without any fluoride in the etching solution of the present invention, and content of hydrogen peroxide is low, in order to
Effective progress of etching is can guarantee that, the present invention adds appropriate inorganic acid to increase the etching speed to copper molybdenum alloy in etching solution
In rate, preferred embodiments of the present invention, the one kind or many of inorganic acid in nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, hypochlorous acid, permanganic acid
The combination planted.
In preferred embodiments of the present invention, sulfate be selected from niter cake, sodium sulphate, ammonium sulfate, ammonium hydrogen sulfate, copper sulphate,
At least one of potassium sulfate, potassium acid sulfate.
Preferably, the etching solution composition include account for the etching solution gross mass 1%~5% hydrogen peroxide, 1%~
7% inorganic acid, 2%~10% sulfate, 5%~15% Inorganic Ammonium salt buffer, 1%~5% alcamines pH
Conditioning agent, 0.1%~5% stabilizer of hydrogen peroxide, 0.1%~3% metal ion chelation agent, 0.1%~2% metal
Corrosion inhibiter, surplus is deionized water.
In the present invention, Inorganic Ammonium salt buffer be selected from ammonium carbonate, ammonium hydrogen carbonate, ammonium nitrate, ammonium phosphate, ammonium hydrogen phosphate,
At least one of ammonium dihydrogen phosphate.
In the present invention, the main function of the pH adjusting agent of alcamines is regulation etching solution pH value, it is to avoid etching solution pH value mistake
It is low, cause the uneven of etching.In preferred embodiments of the present invention, the pH adjusting agent of alcamines is selected from isopropanolamine, diisopropanol
At least one of amine, triisopropanolamine, monoethanolamine, diethanol amine, triethanolamine.
In the present invention, the main function of stabilizer of hydrogen peroxide is the stability for improving hydrogen peroxide, it is to avoid hydrogen peroxide
The fast decoupled in metal ion increase, makes the reduction of etching solution validity.It is preferred that, stabilizer of hydrogen peroxide has selected from aliphatic
Machine amine, the aliphatic organic matter of certain carbon chain lengths can effectively prevent the fast decoupled of hydrogen peroxide, while amine organic matter
Per se with certain alkalescence, the pH value of etching solution is further improved, it is furthermore preferred that stabilizer of hydrogen peroxide is selected from di-n-propylamine, two
One or more groups in methylamine, triethylamine, isopropylamine, n-butylamine, n-hexylamine, hexamethylene diamine, cyclohexylamine, diethylenetriamine
Close.
In the present invention, the main function of metal ion chelation agent is that the metal ion generated with etching process is quickly formed surely
The metal ion content dissociated in fixed complex compound, reduction etching solution, makes it reduce the influence to hydrogen peroxide, makes etching solution more
Safety and stability.In preferred embodiments of the present invention, metal ion chelation agent be selected from 1-hydroxy ethylidene-1,1-diphosphonic acid, ATMP,
One or more combinations in methylenediphosphonate, pyridinedicarboxylic acid, aminotriacetic acid, hydroxyacetic acid.
In the present invention, metal inhibitor is selected from nitrogen heterocyclic ring type organic, and nitrogen heterocyclic ring type organic can be adsorbed in metal
The surface of copper, effectively slows down the etch-rate of metallic copper, it is furthermore preferred that metal inhibitor is selected from thiophene, thiazole, imidazoles, pyrrole
At least one in azoles, monomethyl imidazoles, methylimidazole, tri-methylimidazolium, methyl benzotriazazole, tetrazole, methyl tetrazolium
Kind.
In the present invention, the resistivity of the deionized water is at least 15 mega-ohm centimeters, wherein the matter of the metal ion contained
Measure concentration and be less than 10ppb.
The another technical scheme that the present invention takes is：Etch application of the above-mentioned etching solution in copper-molybdenum alloy film.
Due to the implementation of above technical scheme, the present invention has following advantage compared with prior art：
Etching solution of the present invention adds a small amount of hydrogen peroxide, is aided with metal inhibitor and inorganic acid, while adding sulfate, nothing
The materials such as machine ammonium salt class buffer so that etching liquid of the present invention ties up to pH changes in etching process and maintains+0.3 scope all the time
It is interior.Etching solution system of the present invention causes etching solution system to maintain pH's in etching process steady due to the cooperation of formula each component
Fixed, being avoided that pH is too low again causes to etch uneven phenomenon, and content of copper ion is during 0ppm~8000ppm, etching speed
Rate is constant, and etching CD and the angle of gradient are basically unchanged, and etching CD Skew can be controlled at 1.0 ± 0.2 μm, and the angle of gradient is 45~60 °,
Noresidue is etched, the high-precision processing request of client is met.
The etching solution of the present invention is environmentally safe without fluoride, and liquid waste processing is simple, and human users' risk is small.
Content of hydrogen peroxide is low in etching solution of the present invention, and adds stabilizer of hydrogen peroxide, and etching solution safety and stability is kept away
Exempt from hydrogen peroxide and acutely decompose to explode, cause casualties and property loss.
Embodiment
Below in conjunction with specific embodiment, the present invention will be further described in detail, but the invention is not restricted to following reality
Apply example.
Embodiment 1
The present embodiment provides a kind of copper-molybdenum alloy film etching solution, and it is by hydrogen peroxide, inorganic acid, sulfate, Inorganic Ammonium
PH conditioning agents, stabilizer of hydrogen peroxide, metal ion chelation agent, metal inhibitor and the deionization of salt buffer, alcamines
Water is constituted.In this example, inorganic acid uses nitric acid and phosphoric acid；Sulfate uses ammonium hydrogen sulfate；Inorganic Ammonium salt buffer uses phosphorus
Acid dihydride ammonium；The PH conditioning agents of alcamines use triethanolamine；Stabilizer of hydrogen peroxide uses n-hexylamine；Metal ion chelation agent
Using pyridinedicarboxylic acid；Metal inhibitor uses imidazoles.This example is tested to the consumption of above component respectively, refers to table 1,
Each percentage is mass percent in table 1, i.e., the component accounts for the percentage of etching solution gross weight, and surplus is deionized water.
Table 1
Embodiment 2
The present embodiment provides a kind of copper-molybdenum alloy film etching solution, and it is by hydrogen peroxide, inorganic acid, sulfate, Inorganic Ammonium
Salt buffer, the pH adjusting agent of alcamines, stabilizer of hydrogen peroxide, metal ion chelation agent, metal inhibitor and deionization
Water is constituted.In this example, inorganic acid uses hydrochloric acid and phosphoric acid；Sulfate uses sodium sulphate；Inorganic Ammonium salt buffer uses phosphoric acid
Ammonium；The pH adjusting agent of alcamines uses isopropanolamine；Stabilizer of hydrogen peroxide uses triethylamine；Metal ion chelation agent uses hydroxyl
Base ethylene-diphosphonic acid；Metal inhibitor uses methyl benzotriazazole.This example is tested to the consumption of above component respectively,
It is mass percent to refer to each percentage in table 2, table 2, i.e. the component accounts for the percentage of etching solution gross weight, surplus for go from
Sub- water.
Table 2
Comparative example 1
The present embodiment provides a kind of copper-molybdenum alloy film etching solution, and it is by hydrogen peroxide, inorganic acid, sulfate, Inorganic Ammonium
Salt buffer, the pH adjusting agent of alcamines, hydrogen peroxide stabilizer, metal ion chelation agent, metal inhibitor and deionized water
Composition.In this example, inorganic acid uses nitric acid and phosphoric acid；Sulfate uses ammonium hydrogen sulfate；Inorganic Ammonium salt buffer uses phosphoric acid
Ammonium dihydrogen；The pH adjusting agent of alcamines uses triethanolamine；Hydrogen peroxide stabilizer uses n-hexylamine；Metal ion chelation agent is used
Pyridinedicarboxylic acid；Metal inhibitor uses imidazoles.Each component addition：Hydrogen peroxide 15%, nitric acid 1%, phosphoric acid 2%, sulfuric acid
Hydrogen ammonium 2%, ammonium dihydrogen phosphate 5%, triethanolamine 1%, n-hexylamine 3%, pyridinedicarboxylic acid 1.5%, imidazoles 0.6%.
Comparative example 2
This comparative example provides a kind of copper-molybdenum alloy film etching solution, and the etching solution adds 0.1%HF on the basis of experiment 2.
Comparative example 3
This comparative example provides a kind of copper-molybdenum alloy film etching solution, and the etching solution is without sulfate, and other are with experiment 4.
Comparative example 4
This comparative example provides a kind of copper-molybdenum alloy film etching solution, and the etching solution is slow without sulfate and Inorganic Ammonium salt
Electuary, other are with experiment 4.
Comparative example 5
This comparative example provides a kind of copper-molybdenum alloy film etching solution, the etching solution without Inorganic Ammonium salt buffer, its
He is with experiment 4.
Comparative example 6
This comparative example provides a kind of addition of Inorganic Ammonium salt buffer in copper-molybdenum alloy film etching solution, the etching solution
For 20%, other same experiments 4.
Comparative example 7
This comparative example provides a kind of copper-molybdenum alloy film etching solution, and the addition of the etching solution Inorganic Ammonium salt buffer is
0.3%, other are with experiment 4.
Etching solution performance test
The etching solution of 1~9 and comparative example 1~7 will be tested to using glass as substrate copper-containing metal film and the sample of molybdenum film
Piece is etched, and specific copper metal film thickness is 10 with molybdenum film thickness ratio：1.
Engraving method is：Under the conditions of 30 ± 0.5 DEG C, print is immersed in etching solution, does not stop agitation, etching period
For 130 seconds, etching was cleaned 2 minutes after terminating with pure water, nitrogen drying, was tested afterwards with scanning electron microscopic observation, evaluated etching effect
Really.Test result is as shown in table 3.
Table 3
As shown in table 3, by experiment 2 and comparative example 2 data relatively from the point of view of, add fluoride, its etching speed
Influence after very little, but addition fluoride, etching cone angle is greatly improved, it is seen that the etching solution of the invention without fluoride, erosion
Quarter, process was more easy to control, and etching precision is high.From the point of view of the result of comparative example 1, etching solution hydrogen peroxide content is high, and etching cone angle and CD are damaged
Lose bigger than normal, and Cu contents, when reaching 8000ppm, hydrogen peroxide is extremely unstable, fast decoupled, easily occurs security incident.From experiment 2
Data analysis show that the consumption of imidazoles loses of great impact to Cu highests content, etching cone angle and CD.In order to ensure etching effect
Really, currently preferred imidazoles consumption is 0.1%~2%.From the point of view of experiment 3,4 and experiment 5,6 two groups of results, ammonium dihydrogen phosphate
The size that CD can be controlled to lose, and it is little on etching cone angle influence.
The etching solution obtained is prepared according to above consumption and component, etching cone angle is suitable, and CD losses meet the requirements, and molybdenum does not have
There is residual, etching solution etching performance is outstanding, meet the requirement of high accuracy processing.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand present disclosure and implement according to this, and it is not intended to limit the scope of the present invention, all according to the present invention
The equivalent change or modification that Spirit Essence is made, should all be included within the scope of the present invention.
Claims (10)
1. a kind of copper-molybdenum alloy film etching solution, it is characterised in that：The pH of the etching solution is 1 ~ 2, the composition of the etching solution
Including account for the hydrogen peroxide of the etching solution gross mass 1% ~ 5%, 0.1% ~ 10% inorganic acid, 0.5% ~ 10% sulfate, 0.5% ~
15% Inorganic Ammonium salt buffer, 0.01% ~ 10% alcamines pH adjusting agent, 0.1% ~ 10% stabilizer of hydrogen peroxide, 0.1%
~ 5% metal ion chelation agent, 0.01% ~ 5% metal inhibitor, surplus is deionized water.
2. copper-molybdenum alloy film etching solution according to claim 1, it is characterised in that：The composition of the etching solution includes accounting for
Hydrogen peroxide, 1% ~ 7% inorganic acid, 2% ~ 10% sulfate, 5% ~ 15% inorganic ammonium salt of the etching solution gross mass 1% ~ 5%
Class buffer, 1% ~ 5% alcamines pH adjusting agent, 0.1% ~ 5% stabilizer of hydrogen peroxide, 0.1% ~ 3% metal ion-chelant
Agent, 0.1% ~ 2% metal inhibitor, surplus is deionized water.
3. copper-molybdenum alloy film etching solution according to claim 1 or 2, it is characterised in that：The inorganic acid be selected from nitric acid,
One or more combinations in sulfuric acid, hydrochloric acid, phosphoric acid, hypochlorous acid, permanganic acid.
4. copper-molybdenum alloy film etching solution according to claim 1, it is characterised in that：The sulfate is selected from hydrogen sulfate
One or more combinations in sodium, sodium sulphate, ammonium sulfate, ammonium hydrogen sulfate, copper sulphate, potassium sulfate, potassium acid sulfate.
5. the copper-molybdenum alloy film etching solution according to claim 1 or 4, it is characterised in that：The Inorganic Ammonium salt buffering
One or more combinations of the agent in ammonium carbonate, ammonium hydrogen carbonate, ammonium nitrate, ammonium phosphate, ammonium hydrogen phosphate, ammonium dihydrogen phosphate.
6. copper-molybdenum alloy film etching solution according to claim 1 or 2, it is characterised in that：The alcamines pH adjusting agent
It is one or more in isopropanolamine, diisopropanolamine (DIPA), triisopropanolamine, monoethanolamine, diethanol amine, triethanolamine
Combination.
7. copper-molybdenum alloy film etching solution according to claim 1 or 2, it is characterised in that：The stabilizer of hydrogen peroxide
One in di-n-propylamine, dimethylamine, triethylamine, isopropylamine, n-butylamine, n-hexylamine, hexamethylene diamine, cyclohexylamine, diethylenetriamine
Plant or a variety of combinations.
8. copper-molybdenum alloy film etching solution according to claim 1 or 2, it is characterised in that：The metal ion chelation agent
Selected from 1-hydroxy ethylidene-1,1-diphosphonic acid, ATMP, methylenediphosphonate, pyridinedicarboxylic acid, aminotriacetic acid, hydroxyacetic acid
In one or more combinations.
9. copper-molybdenum alloy film etching solution according to claim 1 or 2, it is characterised in that：The metal inhibitor is selected from
Thiophene, thiazole, imidazoles, pyrazoles, monomethyl imidazoles, methylimidazole, tri-methylimidazolium, methyl benzotriazazole, tetrazole, first
One or more combinations in base tetrazolium.
10. etch application of the etching solution described in any one of claim 1 ~ 9 claim in copper-molybdenum alloy film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710407480.7A CN107151795A (en) | 2017-06-02 | 2017-06-02 | A kind of copper-molybdenum alloy film etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710407480.7A CN107151795A (en) | 2017-06-02 | 2017-06-02 | A kind of copper-molybdenum alloy film etching solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107151795A true CN107151795A (en) | 2017-09-12 |
Family
ID=59795526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710407480.7A Pending CN107151795A (en) | 2017-06-02 | 2017-06-02 | A kind of copper-molybdenum alloy film etching solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107151795A (en) |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107604360A (en) * | 2017-09-14 | 2018-01-19 | 江阴江化微电子材料股份有限公司 | A kind of selective copper corrosion liquid and application |
| CN108570678A (en) * | 2018-04-13 | 2018-09-25 | 深圳达诚清洗剂有限公司 | A kind of metal etch liquid applied to copper-molybdenum film layer |
| CN108754498A (en) * | 2018-06-15 | 2018-11-06 | 西安微电子技术研究所 | A kind of method that cryochemistry nickel groove body deposited nickel layer takes off except solution and take off nickel layer |
| CN109112545A (en) * | 2018-09-25 | 2019-01-01 | 惠州市宙邦化工有限公司 | A kind of chemical etching composition of copper-molybdenum alloy film |
| CN109252165A (en) * | 2018-08-09 | 2019-01-22 | 苏州纳勒电子科技有限公司 | A kind of preparation method for subtracting copper liquid subtracting copper composition and include the composition |
| CN109536962A (en) * | 2018-11-20 | 2019-03-29 | 无锡格菲电子薄膜科技有限公司 | A kind of CVD graphene growth substrate copper foil acidity etching liquid |
| WO2019090855A1 (en) * | 2017-11-10 | 2019-05-16 | 深圳市华星光电技术有限公司 | Copper-molybdenum titanium alloy etching solution |
| CN110004444A (en) * | 2018-08-09 | 2019-07-12 | 苏州纳勒电子科技有限公司 | A kind of pair of circuit board stings the micro-corrosion liquid lost |
| CN110029348A (en) * | 2018-08-09 | 2019-07-19 | 苏州纳勒电子科技有限公司 | It is a kind of for handling the micro-corrosion liquid on copper surface |
| CN110144588A (en) * | 2019-04-24 | 2019-08-20 | 深圳市华星光电技术有限公司 | Etching liquid and lithographic method |
| CN110204358A (en) * | 2019-06-26 | 2019-09-06 | 匡云叶 | A kind of ceramics pretreatment fluid and preprocess method |
| CN110205630A (en) * | 2018-08-09 | 2019-09-06 | 苏州纳勒电子科技有限公司 | A kind of micro-corrosion liquid that can be used for impurity removing |
| CN111270237A (en) * | 2020-02-26 | 2020-06-12 | 江阴润玛电子材料股份有限公司 | Copper-molybdenum etching solution for advanced plate |
| CN111472003A (en) * | 2020-05-27 | 2020-07-31 | 湖北兴福电子材料有限公司 | Etching solution for adjusting etching cone angle in copper process panel and adjusting method |
| CN111647889A (en) * | 2020-05-27 | 2020-09-11 | 湖北兴福电子材料有限公司 | Copper etching solution with stable etching rate |
| CN111902569A (en) * | 2018-03-26 | 2020-11-06 | 三菱瓦斯化学株式会社 | Etching solution |
| CN111979546A (en) * | 2020-08-19 | 2020-11-24 | 江苏科林泰电子有限公司 | Effective stripping cleaning agent for metal magnesium and silver |
| CN112342547A (en) * | 2019-08-07 | 2021-02-09 | 易安爱富科技有限公司 | Etching liquid composition |
| CN112522705A (en) * | 2020-11-09 | 2021-03-19 | Tcl华星光电技术有限公司 | Etchant for copper-molybdenum film and etching method of copper-molybdenum film |
| CN113529084A (en) * | 2021-06-09 | 2021-10-22 | 昆山晶科微电子材料有限公司 | Etching solution for TFT-array substrate |
| CN114318340A (en) * | 2021-12-22 | 2022-04-12 | 深圳深骏微电子材料有限公司 | Etching solution composition and preparation method thereof |
| CN114855169A (en) * | 2022-05-16 | 2022-08-05 | 江苏和达电子科技有限公司 | Copper etching liquid composition and use method thereof |
| CN115161642A (en) * | 2022-08-11 | 2022-10-11 | 常州百事瑞机电设备有限公司 | High-specific gravity tungsten-based alloy etchant and preparation and use method thereof |
| CN115725974A (en) * | 2022-12-15 | 2023-03-03 | 合肥中聚和成电子材料有限公司 | Copper etching liquid composition |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104480469A (en) * | 2014-12-12 | 2015-04-01 | 江阴润玛电子材料股份有限公司 | Novel TFT copper-molybdenum laminated film etching liquid composition and etching method |
| CN104611702A (en) * | 2015-02-11 | 2015-05-13 | 江阴江化微电子材料股份有限公司 | Liquid crystal panel copper-molybdenum membrane etching liquid |
| CN105908188A (en) * | 2016-05-23 | 2016-08-31 | 杭州格林达化学有限公司 | Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination |
| CN106460197A (en) * | 2015-03-20 | 2017-02-22 | 松下知识产权经营株式会社 | Etching liquid for multilayer film, etching concentrate, and etching method |
| CN106467969A (en) * | 2015-08-17 | 2017-03-01 | 东友精细化工有限公司 | Array substrate for display device manufacture method, etchant and engraving method |
-
2017
- 2017-06-02 CN CN201710407480.7A patent/CN107151795A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104480469A (en) * | 2014-12-12 | 2015-04-01 | 江阴润玛电子材料股份有限公司 | Novel TFT copper-molybdenum laminated film etching liquid composition and etching method |
| CN104611702A (en) * | 2015-02-11 | 2015-05-13 | 江阴江化微电子材料股份有限公司 | Liquid crystal panel copper-molybdenum membrane etching liquid |
| CN106460197A (en) * | 2015-03-20 | 2017-02-22 | 松下知识产权经营株式会社 | Etching liquid for multilayer film, etching concentrate, and etching method |
| CN106467969A (en) * | 2015-08-17 | 2017-03-01 | 东友精细化工有限公司 | Array substrate for display device manufacture method, etchant and engraving method |
| CN105908188A (en) * | 2016-05-23 | 2016-08-31 | 杭州格林达化学有限公司 | Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination |
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107604360A (en) * | 2017-09-14 | 2018-01-19 | 江阴江化微电子材料股份有限公司 | A kind of selective copper corrosion liquid and application |
| CN107604360B (en) * | 2017-09-14 | 2019-10-15 | 江阴江化微电子材料股份有限公司 | A kind of selectivity copper corrosion liquid and application |
| WO2019090855A1 (en) * | 2017-11-10 | 2019-05-16 | 深圳市华星光电技术有限公司 | Copper-molybdenum titanium alloy etching solution |
| CN111902569B (en) * | 2018-03-26 | 2022-03-29 | 三菱瓦斯化学株式会社 | Etching solution |
| CN111902569A (en) * | 2018-03-26 | 2020-11-06 | 三菱瓦斯化学株式会社 | Etching solution |
| CN108570678A (en) * | 2018-04-13 | 2018-09-25 | 深圳达诚清洗剂有限公司 | A kind of metal etch liquid applied to copper-molybdenum film layer |
| CN108754498A (en) * | 2018-06-15 | 2018-11-06 | 西安微电子技术研究所 | A kind of method that cryochemistry nickel groove body deposited nickel layer takes off except solution and take off nickel layer |
| CN110029348A (en) * | 2018-08-09 | 2019-07-19 | 苏州纳勒电子科技有限公司 | It is a kind of for handling the micro-corrosion liquid on copper surface |
| CN110004444A (en) * | 2018-08-09 | 2019-07-12 | 苏州纳勒电子科技有限公司 | A kind of pair of circuit board stings the micro-corrosion liquid lost |
| CN109252165A (en) * | 2018-08-09 | 2019-01-22 | 苏州纳勒电子科技有限公司 | A kind of preparation method for subtracting copper liquid subtracting copper composition and include the composition |
| CN110205630A (en) * | 2018-08-09 | 2019-09-06 | 苏州纳勒电子科技有限公司 | A kind of micro-corrosion liquid that can be used for impurity removing |
| CN109112545A (en) * | 2018-09-25 | 2019-01-01 | 惠州市宙邦化工有限公司 | A kind of chemical etching composition of copper-molybdenum alloy film |
| CN109536962B (en) * | 2018-11-20 | 2023-06-16 | 无锡格菲电子薄膜科技有限公司 | Copper foil acidic etching solution for CVD graphene growth substrate |
| CN109536962A (en) * | 2018-11-20 | 2019-03-29 | 无锡格菲电子薄膜科技有限公司 | A kind of CVD graphene growth substrate copper foil acidity etching liquid |
| CN110144588A (en) * | 2019-04-24 | 2019-08-20 | 深圳市华星光电技术有限公司 | Etching liquid and lithographic method |
| CN110204358A (en) * | 2019-06-26 | 2019-09-06 | 匡云叶 | A kind of ceramics pretreatment fluid and preprocess method |
| CN110204358B (en) * | 2019-06-26 | 2021-11-09 | 匡云叶 | Ceramic pretreatment liquid and pretreatment method |
| CN112342547B (en) * | 2019-08-07 | 2024-04-16 | 易安爱富科技有限公司 | Etching liquid composition |
| CN112342547A (en) * | 2019-08-07 | 2021-02-09 | 易安爱富科技有限公司 | Etching liquid composition |
| CN111270237A (en) * | 2020-02-26 | 2020-06-12 | 江阴润玛电子材料股份有限公司 | Copper-molybdenum etching solution for advanced plate |
| CN111472003A (en) * | 2020-05-27 | 2020-07-31 | 湖北兴福电子材料有限公司 | Etching solution for adjusting etching cone angle in copper process panel and adjusting method |
| CN111647889A (en) * | 2020-05-27 | 2020-09-11 | 湖北兴福电子材料有限公司 | Copper etching solution with stable etching rate |
| CN111979546A (en) * | 2020-08-19 | 2020-11-24 | 江苏科林泰电子有限公司 | Effective stripping cleaning agent for metal magnesium and silver |
| CN112522705A (en) * | 2020-11-09 | 2021-03-19 | Tcl华星光电技术有限公司 | Etchant for copper-molybdenum film and etching method of copper-molybdenum film |
| CN113529084A (en) * | 2021-06-09 | 2021-10-22 | 昆山晶科微电子材料有限公司 | Etching solution for TFT-array substrate |
| CN114318340B (en) * | 2021-12-22 | 2023-09-29 | 惠州达诚微电子材料有限公司 | Etching solution composition and preparation method thereof |
| CN114318340A (en) * | 2021-12-22 | 2022-04-12 | 深圳深骏微电子材料有限公司 | Etching solution composition and preparation method thereof |
| CN114855169A (en) * | 2022-05-16 | 2022-08-05 | 江苏和达电子科技有限公司 | Copper etching liquid composition and use method thereof |
| CN114855169B (en) * | 2022-05-16 | 2024-02-23 | 江苏和达电子科技有限公司 | Copper etching solution composition and use method thereof |
| CN115161642A (en) * | 2022-08-11 | 2022-10-11 | 常州百事瑞机电设备有限公司 | High-specific gravity tungsten-based alloy etchant and preparation and use method thereof |
| CN115161642B (en) * | 2022-08-11 | 2023-10-27 | 常州百事瑞机电设备有限公司 | High specific gravity tungsten-based alloy etchant and preparation and use methods thereof |
| CN115725974A (en) * | 2022-12-15 | 2023-03-03 | 合肥中聚和成电子材料有限公司 | Copper etching liquid composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107151795A (en) | A kind of copper-molybdenum alloy film etching solution | |
| CN104498951B (en) | Oxydol etching solution for copper-molybdenum alloy films | |
| CN105908188A (en) | Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination | |
| CN102834547B (en) | Etching liquid for a copper/titanium multilayer thin film | |
| CN102326235B (en) | Etching solution compositions for metal laminate films | |
| CN109234736A (en) | A kind of high life copper-molybdenum etching solution and engraving method | |
| CN109082663A (en) | A kind of copper/molybdenum etching liquid composition and its application | |
| CN108950557A (en) | A kind of copper/molybdenum etching liquid composition and its application | |
| CN101886265A (en) | Etching solution for copper-containing multilayer film | |
| CN106086891B (en) | A kind of advanced lines tablet copper titanium film acidic etching liquid | |
| CN102177219A (en) | Etching solution for a transparent conductive film | |
| CN103046052B (en) | The stripping liquid of environment-friendly type titanium-containing film and using method thereof | |
| CN107227463A (en) | The etchant of copper/molybdenum film or copper/molybdenum alloy film | |
| CN104893728B (en) | A kind of etching solution of the low-tension for ITO/Ag/ITO film | |
| CN105803459A (en) | Micro-electronic multilayer metal film etching liquid and application thereof | |
| CN102230178A (en) | Etching liquid composition for nickel or nickel/copper alloy | |
| CN112877695B (en) | Etching solution for copper and aluminum films | |
| CN107217248A (en) | Passivation for stainless steel liquid and its passivation new technology | |
| CN103132078A (en) | Etching solution, method for manufacturing the etching solution and etching method using the etching solution | |
| TWI618817B (en) | Etchant composition and etching method using thereof | |
| CN100572602C (en) | The etchant of metallic membrane | |
| CN103194755A (en) | Selective iron etching solution and etching method | |
| CN107217263A (en) | A kind of semicon industry lug manufacturing process copper titanium corrosive liquid | |
| CN109852970A (en) | A kind of dual oxide component aluminium etching solution | |
| CN109652809A (en) | A kind of hybrid corrosion inhibitor in the water base coolant liquid of ethylene glycol |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170912 |