CN109082663A - A kind of copper/molybdenum etching liquid composition and its application - Google Patents
A kind of copper/molybdenum etching liquid composition and its application Download PDFInfo
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- CN109082663A CN109082663A CN201810795063.9A CN201810795063A CN109082663A CN 109082663 A CN109082663 A CN 109082663A CN 201810795063 A CN201810795063 A CN 201810795063A CN 109082663 A CN109082663 A CN 109082663A
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- copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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Abstract
The present invention provides a kind of etchants, each component including following weight fraction: hydrogen peroxide 5~30%, stabilizer of hydrogen peroxide 0.1~5%, etch inhibitor 0.001~0.2%, additive 5~20% is etched, pH adjusting agent 0.1~5% etches style control agent 2~15%, and the deionized water of surplus, the etching style control agent are alcamine compound.The etchant not fluoride, it is environmentally friendly, the harm to operator can be reduced, reduce treatment cost of waste liquor, and etching process is stable, etch-rate is moderate, effectively can avoid emptying the generation of phenomenon, finally obtains the good metal wiring structure of shape.The present invention also provides application of the copper/molybdenum etching liquid composition in display panel preparation.
Description
Technical field
The present invention relates to etching solution technical fields, more particularly to a kind of copper/molybdenum etching liquid composition and its application.
Background technique
At present in the TFT-LCD liquid crystal display of advanced lines, for the cabling requirement for meeting large size panel, grid and data
Metal wiring uses Cu alloy material mostly, and is used as lower barrier metal using titanium, molybdenum etc..
And the existing substantially equal fluoride of copper/molybdenum etching liquid, although the presence of fluoride can be in etching process
Certain beneficial effect is played to the removal of molybdenum layer residue, but the presence of fluoride can react with base plate glass, F- with
SiO2Chemical action occurs and then destruction is generated to base plate glass, influences later period processing procedure performance, and fluoride belongs to environment not
The processing cost of friendly substance, health and waste water to operator proposes challenge.In addition, existing part etching
Copper/molybdenum etch-rate mismatch causes to empty (undercut) phenomenon (irising out as shown in figure 1 shown in part) liquid during the reaction,
Empty phenomenon presence may cause insulating layer fracture and TFT electrically deviate the problems such as, influence Display panel effect.It is based on
Problems existing for existing copper/molybdenum etching liquid, it is necessary to a kind of environmentally friendly copper/molybdenum etching liquid be provided, it is folded to solve copper/molybdenum
Easily there is the problem of emptying phenomenon in etching process in layer.
Summary of the invention
In consideration of it, the etching solution is to environment friend the present invention provides a kind of copper/molybdenum etching liquid composition of not fluoride
Good, and have excellent etching effect, etching process is stable, etch-rate is moderate, can effectively solve copper/molybdenum be stacked in it is etched
Easily occur the problem of emptying phenomenon in journey, finally obtains the good wire structures of shape.
Specifically, in a first aspect, the present invention provides a kind of copper/molybdenum etching liquid composition, the etchant packet
The each component of following weight fraction: hydrogen peroxide 5~30% is included, stabilizer of hydrogen peroxide 0.1~5% etches inhibitor 0.001
~0.2%, additive 5~20% is etched, pH adjusting agent 0.1~5% etches going for style control agent 2~15% and surplus
Ionized water, the etching style control agent are alcamine compound.
In the present invention, the alcamine compound includes the alkanolamine that carbon atom number is 1-10.
In the present invention, the alkanolamine includes isopropanolamine, N- ehtylethanolamine, diglycolamine, triisopropanolamine, a second
Hydramine, N, one of N- dimethylethanolamine and N, N- diethyl ethylene diamine or a variety of.
In the present invention, the weight fraction of the etching style control agent is 2~10%.
In the present invention, the weight fraction of the etching style control agent is 5~15%.
In the present invention, the etching inhibitor includes azole compounds.
In the present invention, the etching additive is selected from tartaric acid, malonic acid, benzoic acid, diethyl alkyd, maleic acid, hydroxyl
Butyric acid, lactic acid, succinic acid, malic acid, glycolic, citric acid, phthalic acid, salicylic acid, alanine, asparagine and essence
At least one of propylhomoserin.
In the present invention, the stabilizer of hydrogen peroxide is selected from N- phenylurea, N, N'- diphenyl urea, 1,3- diethyl -1,3-
At least one of diphenyl urea, 4- methyl thio semicarbazides and diphenylsemicarbazide.
In the present invention, the pH adjusting agent is selected from least one of phosphate, hydrophosphate and organic hypophosphites, institute
The pH for stating etchant is controlled 3~6.
Copper/molybdenum etching liquid composition not fluoride that first aspect present invention provides, it is environmentally friendly, it can reduce to behaviour
Make the harm of personnel, reduces treatment cost of waste liquor comprising the specific components of certain content, under the synergistic effect of each component,
So that it with excellent etching effect, etching process is stable, etch-rate is moderate, it effectively can avoid emptying the generation of phenomenon,
Finally obtain the good metal wiring structure of shape.
Second aspect, the present invention provides a kind of above-mentioned copper/molybdenum etching liquid composition answering in display panel preparation
With the application includes: that the copper/molybdenum etching liquid composition is used to perform etching to form grid and/or source and drain copper/molybdenum film
Pole.
Copper/molybdenum film is performed etching using copper provided in an embodiment of the present invention/molybdenum etching liquid composition, not fluoride,
Later period processing procedure performance is influenced due to without generating destruction to base plate glass, and under the comprehensive function of each component, with excellent
Different etching effect can effectively avoid the presence for emptying phenomenon that the fracture of insulating layer and TFT is led to problems such as electrically to deviate, mention
Rise Display panel effect.In addition, copper of the embodiment of the present invention/it can be used repeatedly for molybdenum etching liquid composition, it is difficult to reduce wastewater treatment
Degree, so as to which the cost of manufacture of panel is effectively reduced.
Advantages of the present invention will be illustrated partially in the following description, and a part is apparent according to specification
, or can implementation through the embodiment of the present invention and know.
Detailed description of the invention
Fig. 1 is to generate the copper/molybdenum film scanning electron microscope for emptying phenomenon after performing etching using existing etching solution to copper/molybdenum film
Figure；
Fig. 2 is copper/molybdenum film after being performed etching using copper/molybdenum etching liquid composition of the embodiment of the present invention 1 to copper/molybdenum film
Scanning electron microscope (SEM) photograph；
Fig. 3 is copper/molybdenum film after being performed etching using copper/molybdenum etching liquid composition of the embodiment of the present invention 1 to copper/molybdenum film
Scanning electron microscope (SEM) photograph under another angle.
Specific embodiment
As described below is the preferred embodiment of the embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, without departing from the principles of the embodiments of the present invention, several improvements and modifications can also be made, these improvement
Also it is considered as the protection scope of the embodiment of the present invention with retouching.
The embodiment of the invention provides a kind of copper/molybdenum etching liquid composition, the etchant includes following weight
The each component of score: hydrogen peroxide 5~30%, stabilizer of hydrogen peroxide 0.1~5% etch inhibitor 0.001~0.2%, erosion
Additive 5~20% is carved, pH adjusting agent 0.1~5% etches the deionized water of style control agent 2~15% and surplus, institute
Stating etching style control agent is alcamine compound.
In embodiment of the present invention, hydrogen peroxide is as copper, the primary oxidizers of molybdenum.Still optionally further, the peroxide
The content for changing hydrogen is 5.5%-25%, 8-15%, 6.5-10%.It, then can be to the acidification of copper/molybdenum when the content deficiency of hydrogen peroxide
It is not enough, thus cannot achieve etching, and when the content of hydrogen peroxide is too high, etching speed will be too fast, to be difficult to control
Make the progress of etching.
In embodiment of the present invention, the etching style control agent is conducive to adjust etching cone angle, makes to etch cone angle control
, further can be by etching cone angle control at ideal 45 ° ± 5 in 30 ° -60 ° of OK range, while ideal quarter can be obtained
Lose straightness.The embodiment of the present invention selects alcamine compound as style control agent, additionally it is possible to inhibit well because in system
Concentration of metal ions is increased with continuous carry out of etching and then the decomposition of caused hydrogen peroxide, maintains etching solution etching effect
Fruit and its larger hydrophily can inhibit the generation of metallic residue.Specifically optionally, the alcamine compound includes carbon atom
Number is the alkanolamine of 1-10；Can specifically be but not limited to isopropanolamine, N- ehtylethanolamine, diglycolamine, triisopropanolamine,
Monoethanolamine, N, one of N- dimethylethanolamine and N, N- diethyl ethylene diamine or a variety of.
In embodiment of the present invention, in order to obtain preferable etch effect, obtain preferably etching cone angle and etching straight line
Degree needs rationally to control the content for etching style control agent described in etching solution for copper/molybdenum film layer of different-thickness.It is described
Copper/molybdenum film layer refers to layers of copper (can be copper or copper alloy) and the lamination that molybdenum layer is formed.Optionally, when the copper layer thickness existsWhen following, the weight fraction of the etching style control agent is 2~10%, be further 2%~4%, 5%~
9%.And when the copper layer thickness existsOr more when, it is described etching style control agent weight fraction be 5~15%,
It is further 6~12%, 12~15%.
In embodiment of the present invention, the metal ion generated after the etching maskable etching of inhibitor plays similar yin
The effect of polarity corrosion inhibiter inhibits metal ion to decomposing hydrogen dioxide solution, to improve the uniformity of etching.The etching inhibitor
Selected from azole compounds, the azole compounds include non-substituted azole compounds, amino substituted azole compounds, phenyl substitution
One of azole compounds, benzazoles compound are a variety of.The azole compounds can be imidazoles or thiazole, the benzene
And azole compounds include one of benzimidazoles compound, benzothiazole compound and benzotriazole compound or
It is a variety of.Such as can be 1H- imidazoles, 1H-TETRAZOLE, 5- phenyl -1H-TETRAZOLE, 5- amino -1H-TETRAZOLE, 3- amino -1H- triazole,
1,3-thiazoles, benzotriazole, mercaptobenzothiazoler and methylbenzotrazole etc..Further, the content of the etching inhibitor
It is 0.02~0.1%, 0.09~0.2%.
In embodiment of the present invention, the etching additive can effectively regulate and control the etch-rate of etching solution, facilitate
The etching of copper and molybdenum, and the removal of the residue from molybdenum obtain good wiring cross sectional shape.The etching additive is
Organic acid specifically can be selected from tartaric acid, malonic acid, benzoic acid, diethyl alkyd, maleic acid, hydroxybutyric acid, lactic acid, succinic acid, apple
At least one of tartaric acid, glycolic, citric acid, phthalic acid, salicylic acid, alanine, asparagine and arginine.Into
One step, the etching additive is in tartaric acid, malonic acid, benzoic acid, diethyl alkyd, malic acid, glycolic, citric acid
Any two or three of combination.Under the comprehensive function of a variety of organic acids, etch-rate can be preferably controlled, is obtained more excellent
Different etch effect.Further, the content of the etching additive is 6~10%, 8~15%.
In embodiment of the present invention, the chain reaction that the stabilizer of hydrogen peroxide can prevent hydrogen peroxide violent, resistance
The only too quick decomposition of hydrogen peroxide, so that hydrogen peroxide steadily adequately plays a role.The stabilizer of hydrogen peroxide is optional
From N- phenylurea, N, N'- diphenyl urea, 1,3- diethyl -1,3- diphenyl urea, 4- methyl thio semicarbazides and diphenylsemicarbazide
At least one of.Further, the content of the stabilizer of hydrogen peroxide is 0.5~2%, 0.9~4%.
In embodiment of the present invention, the pH adjusting agent can be selected from phosphate, hydrophosphate and organic hypophosphites, specifically
It can be at least one of ammonium phosphate, diammonium hydrogen phosphate, potassium dihydrogen phosphate and ammonium dihydrogen phosphate.The etchant
PH control is 3~6, and further control is 4.5~5.5.Too low pH causes acidity excessive, can be to it in etching process
He generates destruction at film layer, and excessively high pH will lead to the decomposition of hydrogen peroxide again, is unfavorable for the steady progress of reaction.Specifically, institute
The content of pH adjusting agent is stated depending on the final pH of etching solution.
In embodiment of the present invention, the preferable etch temperature of the etchant is 30~35 DEG C.
Copper provided in an embodiment of the present invention/molybdenum etching liquid composition, fluoride, not environmentally friendly, can reduce to behaviour
Make the harm of personnel, reduces treatment cost of waste liquor, and etching process is stable, etch-rate is moderate, can effectively avoid emptying phenomenon
Generation, finally obtain the good metal wiring structure of shape.
The embodiment of the invention also provides by above-mentioned copper/molybdenum etching liquid composition display panel preparation in application,
Concrete application includes, and in the preparation process of tft array substrate, is carried out using the copper/molybdenum etching liquid composition to copper/molybdenum film
Etching is to form the metal wiring structures such as grid, source-drain electrode.The display panel can be liquid crystal display panel, be also possible to
OLED display panel.
Divide multiple embodiments that embodiment of the present invention is further described below:
Embodiment 1
A kind of copper/molybdenum etching liquid composition, each component including following weight fraction: hydrogen peroxide 5.5%, N- phenylurea
0.85%, 5- phenyl -1H-TETRAZOLE 0.04%, citric acid 10.0%, pH adjusting agent 0.1-5%, monoethanolamine 8% and surplus
Deionized water, etching solution pH value be 4.7.
Embodiment 2
A kind of copper/molybdenum etching liquid composition, each component including following weight fraction: hydrogen peroxide 6.5%, N, N'- bis-
Phenylurea 0.9%, 5- amino -1H-TETRAZOLE 0.05%, glycolic and citric acid 10%, pH adjusting agent 0.1-5%, N- ethyl second
The deionized water of hydramine 7% and surplus, etching solution pH value are 4.8.
Embodiment 3
A kind of copper/molybdenum etching liquid composition, each component including following weight fraction: hydrogen peroxide 10.0%, N- phenyl
Urea and N, N'- diphenyl urea 1.2%, 3- amino -1H- triazole 0.09%, benzoic acid and tartaric acid 8.5%, pH adjusting agent 0.1-
5%, the deionized water of isopropanolamine 5% and surplus, etching solution pH value is 4.9.
Embodiment 4
A kind of copper/molybdenum etching liquid composition, each component including following weight fraction: hydrogen peroxide 15%, N- phenylurea
2%, methylbenzotrazole 0.02%, benzoic acid and citric acid 9%, pH adjusting agent 0.1-5%, diglycolamine 12%, Yi Jiyu
The deionized water of amount, etching solution pH value are 5.2.
Embodiment 5
A kind of copper/molybdenum etching liquid composition, each component including following weight fraction: hydrogen peroxide 6%, diphenylsemicarbazide
0.8%, benzotriazole 0.06%, glycolic, benzoic acid and citric acid 8.5%, pH adjusting agent 0.1-5%, isopropanolamine 9%,
And the deionized water of surplus, etching solution pH value are 4.7.
Embodiment 6
A kind of copper/molybdenum etching liquid composition, each component including following weight fraction: hydrogen peroxide 20%, N- phenylurea
3%, methylbenzotrazole 0.2%, tartaric acid, malic acid and citric acid 6%, pH adjusting agent 0.1-5%, diglycolamine 6%, with
And the deionized water of surplus, etching solution pH value are 5.2.
In order to evaluate copper/molybdenum etching liquid composition effect of the embodiment of the present invention, following etching performance test is carried out:
Deposition thickness is on the glass substrateMolybdenum layer, then deposition thickness is on molybdenum layerLayers of copper,
Then photoetching engineering is carried out, pattern is formed, test piece is made.In photoetching process, using the etching solution group in above-mentioned specific embodiment
It closes object to be etched, the etch temperature in etching process is 34 DEG C, using scanning electron microscope to the erosion of copper/molybdenum film after etching
It carves feature to be observed, as a result as shown in Fig. 2, Fig. 2 is copper/molybdenum etching liquid composition using the embodiment of the present invention 1 to copper/molybdenum
Film perform etching after copper/molybdenum film scanning electron microscope (SEM) photograph, Fig. 3 be using the embodiment of the present invention 1 copper/molybdenum etching liquid composition pair
Copper/molybdenum film perform etching after copper/another angle of molybdenum film under scanning electron microscope (SEM) photograph, from figures 2 and 3, it will be seen that etching after obtain
Good cross sectional shape was obtained, good etching straightness has been obtained, forms about 58 ° of etching cone angle, and the present embodiment
Etchant is to glass substrate without destruction, thus performance is made in the later period that can improve panel.
Know after tested, other embodiments of the invention obtain good cross sectional shape, and it is straight to have obtained good etching
Dimension, forms 30-60 ° of etching cone angle, and etching result is ideal.
It should be noted that the announcement and elaboration of book, those skilled in the art in the invention may be used also according to the above description
To change and modify the above embodiment.Therefore, the invention is not limited to specific implementations disclosed and described above
Mode should also be as within scope of protection of the claims of the invention some equivalent modifications of the invention and change.In addition,
Although using some specific terms in this specification, these terms are merely for convenience of description, not to structure of the present invention
At any restrictions.
Claims (10)
1. a kind of copper/molybdenum etching liquid composition, which is characterized in that the etchant includes each group of following weight fraction
Point: hydrogen peroxide 5~30%, stabilizer of hydrogen peroxide 0.1~5% etch inhibitor 0.001~0.2%, etch additive 5
~20%, pH adjusting agent 0.1~5% etches the deionized water of style control agent 2~15% and surplus, the etching shape
Controlling agent is alcamine compound.
2. copper as described in claim 1/molybdenum etching liquid composition, which is characterized in that the alcamine compound includes carbon original
Subnumber is the alkanolamine of 1-10.
3. copper as described in claim 1/molybdenum etching liquid composition, which is characterized in that the alcamine compound includes isopropyl
Hydramine, N- ehtylethanolamine, diglycolamine, triisopropanolamine, monoethanolamine, N, N- dimethylethanolamine and N, N- diethyl second
One of hydramine is a variety of.
4. copper as described in any one of claims 1-3/molybdenum etching liquid composition, which is characterized in that the etching shape control
The weight fraction of agent is 2~10%.
5. copper as described in any one of claims 1-3/molybdenum etching liquid composition, which is characterized in that the etching shape control
The weight fraction of agent is 5~15%.
6. copper as described in claim 1/molybdenum etching liquid composition, which is characterized in that the etching inhibitor includes azole
Close object.
7. copper as described in claim 1/molybdenum etching liquid composition, which is characterized in that the etching additive be selected from tartaric acid,
Malonic acid, benzoic acid, diethyl alkyd, maleic acid, hydroxybutyric acid, lactic acid, succinic acid, malic acid, glycolic, citric acid, adjacent benzene
At least one of dioctyl phthalate, salicylic acid, alanine, asparagine and arginine.
8. copper as described in claim 1/molybdenum etching liquid composition, which is characterized in that the stabilizer of hydrogen peroxide is selected from N-
Phenylurea, N, in N'- diphenyl urea, 1,3- diethyl -1,3- diphenyl urea, 4- methyl thio semicarbazides and diphenylsemicarbazide
It is at least one.
9. copper as described in claim 1/molybdenum etching liquid composition, which is characterized in that the pH adjusting agent is selected from phosphate, phosphorus
The pH of at least one of sour hydrogen salt and organic hypophosphites, the etchant is controlled 3~6.
10. described such as application of the described in any item copper of the claim 1-9/molybdenum etching liquid composition in display panel preparation
Using including: that the copper/molybdenum etching liquid composition is used to perform etching to form grid and/or source-drain electrode copper/molybdenum film.
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| CN201810795063.9A CN109082663A (en) | 2018-07-19 | 2018-07-19 | A kind of copper/molybdenum etching liquid composition and its application |
| PCT/CN2018/104179 WO2020015078A1 (en) | 2018-07-19 | 2018-09-05 | Copper/molybdenum etching solution composition and application thereof |
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| CN201810795063.9A CN109082663A (en) | 2018-07-19 | 2018-07-19 | A kind of copper/molybdenum etching liquid composition and its application |
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| CN111074278A (en) * | 2020-01-03 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Etching solution composition and etching method of copper-molybdenum film layer |
| CN111472003A (en) * | 2020-05-27 | 2020-07-31 | 湖北兴福电子材料有限公司 | Etching solution for adjusting etching cone angle in copper process panel and adjusting method |
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