CN107078102A - 半导体背面用薄膜 - Google Patents
半导体背面用薄膜 Download PDFInfo
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- CN107078102A CN107078102A CN201680001818.2A CN201680001818A CN107078102A CN 107078102 A CN107078102 A CN 107078102A CN 201680001818 A CN201680001818 A CN 201680001818A CN 107078102 A CN107078102 A CN 107078102A
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- bond layer
- film
- semiconductor
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- semiconductor chip
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Abstract
本发明提供一种能够防止半导体晶片或半导体芯片的翘曲、并且能够防止碎片或回焊破裂的发生的半导体背面用薄膜。本发明的半导体保护用薄膜的特征在于,具有用于贴合在半导体芯片的背面的金属层、和用于将所述金属层粘接于所述半导体芯片的背面的粘接剂层,所述粘接剂层的粘接于所述半导体芯片的一侧的面及与所述金属剂层粘接侧的面的表面自由能均为35mJ/m2以上,B阶段的所述粘接剂层与所述金属层的剥离力为0.3N/25mm以上。
Description
技术领域
本发明涉及半导体背面用薄膜,特别是涉及用于贴合于以倒装(face down)方式加以安装的半导体芯片背面的半导体背面用薄膜。
背景技术
近年,更进一步要求半导体装置及其封装体的薄型化、小型化。加以进行使用称为所谓倒装(face down)方式的安装法的半导体装置的制造。在倒装方式中,使用在电路面形成用于确保导通的被称为凸块的凸状的电极而成的半导体芯片,使电路面反转(日文:フェイスダウン),成为将电极连接于基板的结构(所谓的倒装芯片连接)。在如此的半导体装置中,有时借助半导体背面用薄膜而保护半导体芯片的背面,防止半导体芯片的损伤等(参照专利文献1)。另外,也有时对该半导体背面用薄膜实施激光标识,而提高制品的识别性等(参照专利文献2)。
作为倒装芯片连接的代表性的步骤,将在粘接有半导体背面用薄膜的半导体芯片表面形成的焊料凸块等浸渍于助焊剂,然后使凸块与形成于基板上的电极(根据需要而在该电极上也形成有焊料凸块)接触,最后使焊料凸块熔融而使焊料凸块与电极回焊连接。助焊剂是出于焊接时的焊料凸块的清洗、氧化的防止、焊料的润湿性的改善等目的而加以使用。经由以上的步骤,可构筑半导体芯片与基板之间的良好的电连接。
在此,助焊剂通常仅附着于凸块部分,但根据作业环境的不同而有时附着于粘贴在半导体芯片的背面上的背面用薄膜。而且,当保持附着有助焊剂于背面用薄膜的状态而进行回焊连接时,在背面用薄膜表面产生有来自助焊剂的污痕,而有外观性、激光标识性降低之虞。
因此,作为能够制造即使附着有助焊剂也可防止污痕的产生、能够制造外观性优异的半导体装置的半导体背面用薄膜,提出了具备粘接剂层、和层叠在该粘接剂层上的保护层,用玻璃化转移温度为200℃以上的耐热性树脂或金属构成保护层的半导体背面用薄膜(参照专利文献3)。
现有技术文献
专利文献
专利文献1:日本特开2007-158026号公报
专利文献2:日本特开2008-166451号公报
专利文献3:日本特开2012-033626号公报
发明内容
发明要解决的课题
如上述专利文献1或专利文献2所示,利用放射线或热而使包含放射线固化性成分或热固化性成分的树脂固化而形成保护膜的情况下,固化后的保护膜与半导体晶片的热膨胀系数差大,因此有加工途中的半导体晶片、半导体芯片产生翘曲的问题。本申请发明者们进行研究的结果:了解到如专利文献3那样利用金属而形成保护层的情况也有助于半导体晶片或半导体芯片的翘曲防止。
但是,在用于将金属的保护层粘接于半导体晶片的粘接剂层的粘接力不充分,粘接剂的应力缓和不充分的情况下,半导体晶片与粘接层之间、或者粘接剂层与保护层之间的粘接变得不稳定。其结果是,在半导体晶片的切割时,在半导体晶片或半导体芯片与粘接层之间、或者粘接剂层与保护层之间产生剥离,而有半导体芯片产生碎片(日文:チツピング)(缺口)的问题。另外,在封装时,在半导体芯片与粘接层之间、或者粘接剂层与保护层之间发生回焊破裂,而有可靠性降低的问题。
因此,本发明的课题在于,提供防止半导体晶片或半导体芯片的翘曲、并且可防止碎片或回焊破裂的发生的半导体背面用薄膜。
用于解决课题的手段
为了解决以上的课题,本发明的半导体背面用薄膜的特征在于,具有用于贴合于半导体芯片的背面的金属层、和用于将所述金属层粘接于所述半导体芯片的背面的粘接剂层,所述粘接剂层的粘接于所述半导体芯片的一侧的面及与所述金属剂层粘接侧的面的表面自由能均为35mJ/m2以上,B阶段的所述粘接剂层与所述金属层的剥离力为0.3N/25mm以上。
上述半导体背面用薄膜的所述粘接剂层的吸水率优选为1.5vol%以下。
另外,上述半导体背面用薄膜的所述粘接剂层的饱和吸湿率优选为1.0vol%以下。
另外,半导体背面用薄膜的所述粘接剂层的残存挥发性组分优选为3.0wt%以下。
另外,上述半导体背面用薄膜具有包含基材薄膜与粘合剂层的切割胶带,在所述粘合剂层上设置有所述金属层。
另外,上述半导体背面用薄膜的所述粘合剂层优选为利用放射线的照射而使粘合力降低的放射线固化型粘合剂层。
发明效果
如根据本发明,可防止半导体晶片或半导体芯片的翘曲,并且可防止碎片或回焊破裂的发生。
附图说明
图1是示意性地表示有关本发明的实施方式的半导体背面用薄膜的结构的剖面图。
图2是用于说明有关本发明的实施方式的半导体背面用薄膜的使用方法的剖面图。
具体实施方式
以下,对于本发明的实施方式,详细地加以说明。
图1是表示有关本发明的实施方式的半导体背面用薄膜10的剖面图。本实施方式的半导体背面用薄膜10是切割胶带一体型的半导体背面用薄膜10。该半导体背面用薄膜10具有包含基材薄膜11和设置于基材薄膜11上的粘合剂层12的切割胶带13,在粘合剂层12上,设置有用于保护半导体芯片C(参照图2)的金属层14、和设置于金属层14上的粘接剂层15。
关于粘接剂层15,与金属层14相接的面的相反侧的面优选利用间隔件(剥离衬垫)加以保护者(未图示)。间隔件具有作为提供实用为止保护粘接剂层15的保护材料的功能。另外,在切割胶带一体型的半导体背面用薄膜10的情况下,间隔件可作为将金属层14贴合于切割胶带13的基材薄膜11上的粘合剂层12时的支承基材而使用。
粘合剂层12,金属层14及粘接剂层15可以配合使用工序、装置而预先切断(预切割)成规定形状。此外,本发明的半导体背面用薄膜10也可以是按照每1个半导体晶片W的部分而被切断的形态,也可以是将形成有多个按照每1个半导体晶片W的部分而被切断的薄膜的长条的片卷取成辊状的形态。以下,对于各构成要素加以说明。
<基材薄膜11>
作为基材薄膜11,只要为以往公知的基材薄膜则可没有特别限制地使用,但对于作为后述的粘合剂层12而使用放射线固化性的材料的情况下,优选使用具有放射线透过性的基材薄膜。
例如,作为其材料,可列举:聚乙烯、聚丙烯、乙烯-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、离聚物等的α-烯烃的均聚物或共聚物、或者它们的混合物、聚氨酯、苯乙烯-乙烯-丁烯系共聚物、苯乙烯-乙烯-戊烯系共聚物、聚酰胺-多元醇共聚物等的热塑性弹性体、及它们的混合物。另外,基材薄膜11可以是将选自这些组中的2种以上的材料混合而得者,也可以是将它们单层或多层化而得者。
基材薄膜11的厚度并未特别加以限定,而适宜地进行设定即可,但优选为50~200μm。
为了使基材薄膜11与粘合剂层12的密接性提升,可以对基材薄膜11的表面施以铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、离子化放射线处理等的化学或物理表面处理。
另外,在本实施方式中,在基材薄膜11之上直接设置了粘合剂层12,但也可以借助用于提升密接性的底涂层、用于提高切割时的切削性的锚固层、应力缓和层、静电防止层等而间接地设置。
<粘合剂层12>
作为使用于粘合剂层12的树脂,并未特别加以限定,而可使用用于粘合剂的公知的氯化聚丙烯树脂、丙烯酸类树脂、聚酯树脂、聚氨酯树脂、环氧树脂等。优选在粘合剂层12的树脂中适宜配合丙烯酸系粘合剂、放射线聚合性化合物、光聚合引发剂、固化剂等来制备粘合剂。粘合剂层12的厚度并未特别加以限定,而适宜地设定即可,但优选为5~30μm。
可将放射线聚合性化合物配合在粘合剂层12中,利用放射线固化而容易自金属层14剥离。该放射线聚合性化合物例如使用通过光照射而能够三维网状化的分子内至少具有2个以上的光聚合碳-碳双键的低分量化合物。
具体而言,可应用三羟甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇单羟基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、或低聚酯丙烯酸酯等。
另外,除了如上述的丙烯酸酯系化合物之外,也可使用氨基甲酸酯丙烯酸酯系低聚物。氨基甲酸酯丙烯酸酯系低聚物如下得到:使聚酯型或聚醚型等的多元醇化合物、与多元异氰酸酯化合物(例如,2,4-甲苯二异氰酸酯,2,6-甲苯二异氰酸酯,1,3-亚二甲苯基二异氰酸酯,1,4-亚二甲苯基二异氰酸酯,二苯甲烷4,4-二异氰酸酯等)反应而得到末端异氰酸酯氨基甲酸酯预聚物,使该末端异氰酸酯氨基甲酸酯预聚物与具有羟基的丙烯酸酯或甲基丙烯酸酯(例如,丙烯酸2-羟乙酯,甲基丙烯酸2-羟乙酯,丙烯酸2-羟丙酯,甲基丙烯酸2-羟丙酯,聚乙二醇丙烯酸酯,聚乙二醇甲基丙烯酸酯等)反应。粘合剂层12也可以是将选自上述树脂的2种以上混合而得。
使用光聚合引发剂的情况下,例如可使用异丙基苯偶姻醚、异丁基苯偶姻醚、二苯甲酮、米氏酮、氯噻吨酮、十二烷基噻吨酮、二甲基噻吨酮、二乙基噻吨酮、苯偶酰甲基缩酮、α-羟基环己基苯基甲酮、2-羟基甲基苯基丙烷等。这些光聚合引发剂的配合量相对于丙烯酸系共聚物100质量份优选为0.01~5质量份。
<金属层14>
作为构成金属层14的金属,并未特别加以限定,例如,从激光标识性的点出发,优选为选自不锈钢、铝、铁、钛、锡及铜中的至少1种。在它们之中,从防止半导体晶片W或者半导体芯片C的翘曲的观点,不锈钢特别优选。
金属层14的厚度可以考虑半导体晶片W或者半导体芯片C的翘曲的防止及加工性等而作适宜决定,通常为2~200μm的范围,优选为3~100μm,更优选为4~80μm,特别优选为5~50μm。金属层为200μm以上时,卷曲则变为困难,而为50μm以上时,因加工性的问题而生产率降低。另一方面,作为翘曲抑制的效果,最低至少需要为2μm以上。
<粘接剂层15>
粘接剂层15是预先将粘接剂薄膜化而成的层,粘接于半导体芯片C的一侧的面及与金属层14粘接侧的面的表面自由能均为35mJ/m2以上。在本发明中,表面自由能设为:测定水及二碘甲烷的接触角(液滴容量:水2μL、二碘甲烷3μL、读取时间:滴下30秒后),并由以下式所算出的值。在使用前在粘接于半导体芯片C的一侧的表面贴合有间隔件等的情况下,粘接于半导体芯片C的一侧的面的表面自由能为剥离间隔件后的表面自由能,与金属层14粘接侧的面的表面自由能为剥离金属层14后的表面自由能。
[数学式1]
γs:表面自由能
:表面自由能的极性成分
:表面自由能的分散成分
θH:水对固体表面的接触角
θI:二碘甲烷对固体表面的接触角
当粘接剂层15的粘接于半导体芯片C的一侧的面及与金属层14粘接侧的面的表面自由能小于35mJ/m2时,因润湿性不充分而容易引入空隙,并且金属层14与粘接层15的密接性变得不充分,半导体芯片C与粘接剂层15之间或者粘接剂层15与金属层14之间发生回焊破裂,可靠性则降低。在粘接剂层15的粘接于半导体芯片C的一侧的面及与金属层14粘接侧的面的表面自由能为55mJ/m2以下是实用的。
另外,粘接剂层15在B阶段(未固化状态或半固化状态)中的与金属层14的剥离力(23℃、剥离角度180度、线速度300mm/分钟)为0.3N/25mm以上。剥离力小于0.3N/25mm时,在半导体晶片W的切割时,在半导体晶片W或半导体芯片C与粘接剂层15之间、或者粘接剂层15与金属层14之间产生剥离,而半导体芯片C产生碎片(缺口)。
粘接剂层15的吸水率优选为1.5vo1%以下者为佳。吸水率的测定方法如下。即,将50×50mm尺寸的粘接剂层15(薄膜状粘接剂)作为样品,使样品在真空干燥机中以120℃进行3小时干燥,在干燥器中放冷后,测定干燥质量而作为M1。将样品在室温下浸渍于蒸馏水中24小时然后取出,以滤纸擦拭样品表面,马上进行秤量而作为M2。吸水率利用下式(1)而算出。
吸水率(vol%)=[(M2-M1)/(M1/d)]×100 (1)
在此,d为薄膜的密度。
当吸水率超出1.5vol%时,因吸水的水分而在回流焊接时有产生回焊破裂之虞。
粘接剂层15的饱和吸湿率优选为1.0vol%以下。饱和吸湿率的测定方法如下。即,将直径100mm的圆形的粘接剂层15(薄膜状粘接剂)作为样品,使样品在真空干燥机中以120℃进行3小时干燥,在干燥器中放冷后,测定干燥质量而作为M1。将样品在85℃、85%RH的恒温恒湿槽中进行168小时吸湿然后取出,马上进行秤量而作为M2。饱和吸湿率利用下式(2)而算出。
饱和吸湿率(vol%)=[(M2-M1)/(M1/d)]×100 (2)
在此,d为薄膜的密度。
当饱和吸湿率超出1.0vol%时,因回焊时的吸湿故蒸气压的值则变高,无法得到良好的回焊特性。
粘接剂层15的残存挥发性组分优选为3.0wt%以下。残存挥发性组分的测定方法如下。即,将50×50mm尺寸的粘接剂层15(薄膜状粘接剂)作为样品,测定样品的初期的质量而作为M1,将样品在热风循环恒温槽中以200℃进行2小时加热后,进行秤量而作为M2。残存挥发性组分利用下式(3)而算出。
残存挥发性组分(wt%)=[(M2-M1)/M1]×100 (3)
当残存挥发性组分超出3.0wt%时,因封装时的加热故溶剂挥发,于粘接剂层15的内部产生空隙,成为封装体破裂的主要原因。
就粘接剂层15而言,例如,可使用用于粘接剂的公知的聚酰亚胺树脂、聚酰胺树脂、聚醚酰亚胺树脂、聚酰胺酰亚胺树脂、聚酯树脂、聚酯酰亚胺树脂、苯氧基树脂、聚砜树脂、聚醚砜树脂、聚苯硫醚树脂、聚醚酮树脂、氯化聚丙烯树脂、丙烯酸类树脂、聚氨酯树脂、环氧树脂、聚丙烯酰胺树脂、三聚氰胺树脂等或其混合物,但从粘接剂层15的粘接性与可靠性的观点出发,优选包含丙烯酸系共聚物、环氧树脂,丙烯酸系共聚物的Tg为0℃以上40℃以下,重均分子量为10万以上100万以下。更优选的重均分子量为60万以上90万以下。
需要说明的是,重均分子量是利用胶凝渗透色谱(GPC)法而使用基于标准聚苯乙烯的校正曲线而测得的。
(基于GPC法的测定条件)
使用机器:高效液相色谱LC-20AD[株式会社岛津制作所制、商品名]
柱:Shodex Colμmn GPC KF-805[株式会社岛津制作所制、商品名]
洗脱液:氯仿
测定温度:45℃
流量:3.0ml/min
RI检测器:RID-10A
丙烯酸系共聚物的聚合方法并无特别限制,例如,可举出珠状聚合、溶液聚合、悬浮聚合等,利用这些方法而得到共聚物。由于耐热性优异故优选悬浮聚合,作为这样的丙烯酸系共聚物,例如可举出ParacronW-197C(根上工业株式会社制、商品名)。
丙烯酸系共聚物优选包含丙烯腈。相对于丙烯酸系共聚物,优选10~50质量%、更优选20~40质量%为丙烯腈。丙烯腈为10质量%以上时,可提升粘接剂层15的Tg,使粘接性提升者,但为50质量%以上时,粘接剂层15的流动性变差,有时粘接性下降。特别优选含有丙烯腈的基于悬浮聚合的丙烯酸系共聚物。
为了使粘接性提升,丙烯酸系共聚物可以具有官能团。作为官能团并无特别限定,例如,可举出胺基、氨基甲酸酯基、酰亚胺基、羟基、羧基、缩水甘油基等,其中,优选缩水甘油基。缩水甘油基与作为热固化树脂的环氧树脂的反应性良好,若与羟基等进行比较则不易与粘合剂层12反应,因此不易引起表面自由能的变化。
粘接剂层15也可以含有无机填料,但当添加量多时流动性下降,粘接性降低,因此优选小于40质量%,更优选小于20质量%,进一步优选小于15质量%。另外,粒径大时在粘接面的表面产生凹凸,粘接性下降,因此平均粒径优选小于1μm,更优选小于0.5μm,进一步优选小于0.1μm。无机填料的粒径的下限并无特别限制,但为0.003μm以上的情况是切与实际的。
为了控制表面自由能,可以添加硅烷偶联剂或钛酸酯偶联剂、氟系接枝共聚物作为添加剂。优选含有巯基、缩水甘油基。
粘接剂层15的厚度并无特别限制,通常优选为3~100μm,更优选为5~20μm。
金属层14的线膨胀系数相对于粘接剂层15的线膨胀系数之比(金属层14的线膨胀系数/粘接剂层15的线膨胀系数)优选为0.2以上。当该比小于0.2时,金属层14与粘接剂层15之间容易发生剥离,在封装时发生回焊破裂,有可靠性降低之虞。
在本实施方式中,在粘合剂层12上直接设置了金属层14,但也可以借助用于使拾取性提升的剥离层、将半导体芯片C、金属层14、与粘接剂层15同时自粘合剂层12剥离而用于赋予半导体芯片C功能的功能层(例如,散热层等)而间接性地设置。另外,在金属层14与粘接剂层15之间也可以设置功能层。
(间隔件)
间隔件为使粘接剂层15的处理性良好、并用于保护粘接剂层15的构件。作为间隔件,可使用聚酯(PET、PBT、PEN、PBN、PTT)系、聚烯烃(PP、PE)系、共聚物(EVA、EEA、EBA)系、以及将这些材料作分置换而进一步提升粘接性、机械强度的薄膜。另外,也可以为这些薄膜的层叠体。
间隔件的厚度并未特别加以限定,可以适宜地进行设定,但优选为25~50μm。
(背面用薄膜的制造方法)
对于有关本实施方式的切割胶带一体型的半导体背面用薄膜10的制造方法加以说明。首先,粘接剂层15可通过制备树脂组合物、并利用形成为薄膜状的层的惯用方法而形成。具体而言,例如,可举出:在适当的间隔件(剥离纸等)上涂布所述树脂组合物并进行干燥(在需要热固化的情况等下,根据需要实施加热处理并进行干燥)而形成粘接剂层15的方法等。所述树脂组合物可以为溶液,也可以为分散液。接着,贴合所得到的粘接剂层15与另外准备的金属层14。作为金属层14,使用市售的金属箔即可。之后,使用压切刀而将粘接剂层15及金属层14预切割为规定尺寸的圆形标签形状,再除去周边的不需要部分。
接着,制作切割胶带13。基材薄膜11可利用以往公知的制膜方法来进行制膜。作为该制膜方法,例如,可例示压延制膜法、在有机溶剂中的流延法、在密闭体系中的吹塑法、T模挤出法、共挤出法、干式层压法等。然后,在基材薄膜11上涂布粘合剂组合物,使其干燥(根据需要而使其加热交联)而形成粘合剂层12。作为涂布方式,可举出辊涂敷、丝网涂敷、凹版涂敷等。需要说明的是,将粘合剂层12组合物直接涂布于基材薄膜11、而于基材薄膜11上形成粘合剂层12亦可,另外,将粘合剂组合物涂布于对表面进行了剥离处理的剥离纸上而形成粘合剂层12后、使该粘合剂层12转印至基材薄膜11亦可。由此,制作在基材薄膜11上形成了粘合剂层12的切割胶带13。
之后,以使金属层14与粘合剂层12相接的方式,在设置有圆形的金属层14及粘接剂层15的间隔件上层压切割胶带13,而根据情况将切割胶带13也预切割为规定尺寸的圆形标签形状等,由此制作切割胶带一体型的半导体背面用薄膜10。
<使用方法>
接下来,对于使用本实施方式的切割胶带一体型的半导体背面用薄膜10而制作半导体装置的方法,参照图2同时加以说明。
半导体装置的制造方法至少具备:在切割胶带一体型的半导体背面用薄膜10上粘贴半导体晶片W的工序(装配工序);切割半导体晶片W而形成半导体芯片C的工序(切割工序);将半导体芯片C与半导体背面用薄膜10一起自切割胶带13的粘合剂层12剥离的工序(拾取工序);和将半导体芯片C倒装芯片连接于被粘物16上的工序(倒装芯片连接工序)。
[装配工序]
首先,适宜地将任选地设置于切割胶带一体型的半导体背面用薄膜10上的间隔件玻璃,如图2(A)所示地,将半导体晶片W粘贴于粘接剂层15,使其粘接保持而固定(装配工序)。此时,粘接剂层15处于未固化状态(包含半固化状态)。另外,切割胶带一体型的半导体背面用薄膜10粘贴于半导体晶片W的背面。半导体晶片W的背面是指与电路面相反一侧的面(亦称为非电路面、非电极形成面等)。粘贴方法并无特别限定,但利用压接的方法。压接通常利用压接辊等按压手段而在按压的同时加以进行。
[切割工序]
接下来,如图2(B)所示地,进行半导体晶片W的切割。由此,将半导体晶片W切断为规定的尺寸而进行单片化(小片化),制造半导体芯片C。切割例如自半导体晶片W的电路面侧依照常用方法来进行。另外,在本工序中,例如,可采用至半导体背面用薄膜10为止进行切入的称为全切割的切断方式等。作为在本工序所使用的切割装置,并无特别限定,可使用以往公知的装置。另外,半导体晶片W利用半导体背面用薄膜10而以优异的密接性被粘接固定,因此可抑制芯片缺陷、芯片飞散,并且可抑制半导体晶片W的破损。需要说明的是,进行切割胶带一体型的半导体背面用薄膜10的展开(日文:ェキスパンド)的情况下,该展开可使用以往公知的展开装置来进行。
[拾取工序]
如图3(C)所示,进行半导体芯片C的拾取,将半导体芯片C与粘接剂层15及金属层14一起自切割胶带13剥离。作为拾取的方法并无特别限定,可采用以往公知的各种方法。例如,可举出:利用针状物自半导体背面用薄膜10的基材薄膜11侧对各个半导体芯片C进行推顶,利用拾取装置将被推顶的半导体芯片C拾取的方法等。需要说明的是,所拾取的半导体芯片C的背面被金属层14加以保护。
[倒装芯片连接工序]
所拾取的半导体芯片C如在图3(D)所示,利用倒装芯片覆晶接合方式(倒装芯片安装方式)而使其固定于基板等的被粘物16。具体而言,以半导体芯片C的电路面(也称为表面、电路图案形成面、电极形成面等)与被粘物16相向的形态,依照常用方法使半导体芯片C固定于被粘物16。例如,首先,使助焊剂附着于形成于半导体芯片C的电路面侧的作为连接部的凸块17。接着,使半导体芯片C的凸块17、与粘附于被粘物16的连接焊盘的接合用的导电材料18(焊料等)接触并按压,同时使凸块17及导电材料18熔融,由此确保半导体芯片C与被粘物16的电导通,可使半导体芯片C固定于被粘物16(倒装芯片接合工序)。此时,在半导体芯片C与被粘物16之间形成空隙,该空隙间距离一般为30μm~300μm程左右。需要说明的是,将半导体芯片C倒装芯片接合(倒装芯片连接)于被粘物16之后,洗净除去残存于半导体芯片C与被粘物16的相向面、间隙的助焊剂,使密封材料(密封树脂等)充填该间隙而进行密封。
作为被粘物16,可使用引线框或电路基板(布线电路基板等)等的各种基板。作为这样的基板的材质,并未特别加以限定,但可举出陶瓷基板、塑料基板等。作为塑料基板,例如,可举出环氧基板、双马来酸酰亚胺三嗪基板、聚酰亚胺基板等。
在本实施方式中,对于切割胶带一体型的半导体背面用薄膜10进行了说明,但即使未与切割胶带13一体化亦可。在粘接剂层15及金属层14未层叠于切割胶带13的半导体背面用薄膜的情况下,粘接剂层15的与金属层14相接面的相反侧的面优选利用具有剥离层的间隔件加以保护。在使用时,适宜剥离间隔件,在粘接剂层15贴合半导体晶片W的背面。在粘接剂层15及金属层14未被预切割为规定形状的情况,切割为规定形状,将所得到的层叠体的金属层14侧贴合于另外的切割胶带的粘合剂层,再与上述的切割工序以后的工序同样操作,制造半导体装置即可。
<实施例>
接下来,为了使本发明的效果更为明确,而对实施例及比较例加以详细说明,但本发明并非限定于这些实施例。
(1)丙烯酸类聚合物的制作
首先,对包含于有关各实施例及各比较例的半导体背面用薄膜的粘接剂层的丙烯酸类聚合物的制作方法加以说明。
<丙烯酸类聚合物(1)>
在具备搅拌机的玻璃制的四口圆底烧瓶中放入水300质量份,作为分散安定剂而溶解聚乙烯醇0.7质量份,在利用搅拌翼而以300rpm进行搅拌同时,一次性投入包含丙烯酸乙酯65质量份、丙烯酸丁酯23质量份、甲基丙烯酸缩水甘油酯2质量份、丙烯腈12质量份的单体混合物与作为聚合引发剂的N,N’-偶氮二异丁腈1质量份,制成悬浮液。
在搅拌继续下,使反应体系内升温至68℃,4小时保持状态不变而是悬浮液反应。之后,冷却至室温(约25℃)为止。接下来,固液分离反应物,以水充分地清洗之后,使用干燥机而以70℃进行12小时干燥,然后加入2-丁酮而调整固体成分达到15%,得到丙烯酸类聚合物(1)。自配合比计算出的Tg为-22℃。此聚合物的重均分子量为40万,分散度为3.8。重均分子量利用凝胶渗透色谱(Gel Permeation Chromatography:GPC)法而使用基于标准聚苯乙烯的校准曲线而测定。
<丙烯酸类聚合物(2)>
将丙烯酸乙酯设为43质量份、丙烯酸丁酯设为15质量份、甲基丙烯酸缩水甘油酯设为5质量份、丙烯腈设为37质量份,除此以外,利用与丙烯酸类聚合物(1)同样的制造法来制作丙烯酸类聚合物(2)。自配合比计算的Tg为12℃。该聚合物的基于凝胶渗透色谱法的重均分子量为70万,分散度为3.6。
<丙烯酸类聚合物(3)>
将丙烯酸乙酯设为43质量份、丙烯酸丁酯设为15质量份、甲基丙烯酸缩水甘油酯设为5质量份、丙烯腈设为36质量份,并加入改性硅油1质量份,除此以外,利用与丙烯酸类聚合物(1)同样的制造法来制作丙烯酸类聚合物(3)。自配合比计算的Tg为12℃。该聚合物的基于凝胶渗透色谱法的重均分子量为60万,分散度为4.0。
<丙烯酸类聚合物(4)>
将丙烯酸乙酯设为34质量份、丙烯酸丁酯设为15质量份、甲基丙烯酸缩水甘油酯设为2质量份、丙烯腈设为49质量份,除此以外,利用与丙烯酸类聚合物(1)同样的制造法来制作丙烯酸类聚合物(4)。自配合计算的Tg为21℃。该聚合物的基于凝胶渗透色谱法的重均分子量为12万,分散度为2.3。
(2)粘接剂层的制作
<粘接剂层(1)>
相对于上述丙烯酸类聚合物(1)100质量份,添加甲酚酚醛型环氧树脂(环氧当量197、分子量1200、软化点70℃)25质量份、亚二甲苯基酚醛树脂(羟基当量104、软化点80℃)60质量份,作为充填材料的平均粒径0.045μm的二氧化硅填料20质量份而得到热固化性的粘接剂组合物。将该粘接剂组合物涂布于构成间隔件的PET薄膜上,以120℃进行10分钟加热干燥,形成干燥后的厚度20μm的B阶段状态的涂膜,而得到PET薄膜/粘接剂层(1)/PET薄膜的层叠体。
需要说明的是,PET薄膜使用了经硅酮脱模处理的PET薄膜(帝人:HYUPIREKUSUS-314(商品名)、厚度25μm)。
<粘接剂层(2)>
除了代替上述丙烯酸类聚合物(1)而使用丙烯酸类聚合物(2)以外,以与粘接剂层(1)同样的方法而得到粘接剂层(2)。
<粘接剂层(3)>
除了代替上述丙烯酸类聚合物(1)而使用丙烯酸类聚合物(3)以外,以与粘接剂层(1)同样的方法而得到粘接剂层(3)。
<粘接剂层(4)>
除了代替上述丙烯酸类聚合物(1)而使用丙烯酸类聚合物(4)以外,以与粘接剂层(1)同样的方法而得到粘接剂层(4)。
<粘接剂层(5)>
将与粘接剂层(1)同样的粘接剂组合物涂布于构成间隔件的PET薄膜上,以120℃进行6分钟加热干燥,除此以外,以与粘接剂层(1)同样的方法而得到粘接剂层(5)。
(3)粘合剂层组合物的制作
<粘合剂层组合物(1)>
使丙烯酸丁酯65质量份、丙烯酸2-羟乙酯25质量份、丙烯酸10质量份自由基聚合,在使甲基丙烯酸2-异氰酸基乙酯滴加反应而合成的重均分子量80万的丙烯酸共聚物中,添加作为固化剂的聚异氰酸酯3质量份、作为光聚合引发剂的1-羟基环己基苯基酮1质量份并混合,制成粘合剂层组合物(1)。
<粘合剂层组合物(2)>
在使丙烯酸2-乙基己酯77质量份、丙烯酸2-羟丙酯23质量份聚合后的重均分子量80万的丙烯酸类共聚物中,添加作为固化剂的聚异氰酸酯3重量份并混合,制成粘合剂层组合物(2)。
<粘合剂层组合物(3)>
在使丙烯酸2-乙基己酯77质量份,丙烯酸2-羟丙酯23质量份聚合后的重均分子量80万的丙烯酸类共聚物中,添加作为添加剂的改性硅油3质量份、作为固化剂的聚异氰酸酯3重量份并混合,制成粘合剂层组合物(3)。
(4)切割胶带的制作
<切割胶带(1)>
将所制作的粘合剂层组合物(1)涂布于构成间隔件的PET薄膜而使得干燥膜厚成为10μm,以120℃进行3分钟干燥。使涂敷于该PET薄膜的粘合剂层组合物转印至作为基材薄膜的厚度100μm的聚丙烯弹性体(PP∶HSBR=80∶20的弹性体)树脂薄膜上,制作切割胶带(1)需要说明的是,聚丙烯(PP)使用日本Polychem株式会社制的NOVATECFG4(商品名),而氢化苯乙烯丁二烯(HSBR)使用JSR株式会社制的DYNARON1320P(商品名)。另外,PET薄膜使用加以经硅酮脱模处理过的PET薄膜(帝人:HYUPIREKUSUS-314(商品名)、厚度25μm)。
<切割胶带(2),(3)>
除了代替粘合剂层组合物(1)而使用粘合剂层组合物(2)以外,与切割胶带(1)同样地制作切割胶带(2)。另外,除了代替粘合剂层组合物(1)而使用粘合剂层组合物(3)以外,与切割胶带(1)同样地制作切割胶带(3)。
(5)切割胶带一体型的半导体背面用薄膜的制作。
<实施例1>
层压贴合如上操作而得的粘接剂层(1)与50μm厚的SUS304制金属箔而得到层叠体,进一步地以使层叠体的粘接剂层与粘合剂层相接的方式将粘合薄膜(1)与层叠体贴合,得到基材薄膜、粘合剂层、金属层、粘接剂层、间隔件的依次层叠的带有间隔件的半导体背面用薄膜。将该半导体背面用薄膜作为实施例1的样品。
<实施例2>
使用所得到的上述粘接层(2)与粘合薄膜(2),以与实施例1同样的方法而制成实施例2的半导体背面用薄膜。
<实施例3>
使用所得到的上述粘接层(3)与粘合薄膜(2),作为金属层而使用50μm厚的铜箔,以与实施例1同样的方法而制成实施例3的半导体背面用薄膜。
<比较例1>
使用所得到的上述粘接层(4)与粘合薄膜(3),以与实施例1同样的方法而制成比较例1的半导体背面用薄膜。
<比较例2>
使用所得到的上述粘接层(1)与粘合薄膜(1),以粘接层与粘合层相接的方式进行贴合,得到基材薄膜、粘合剂层、粘接剂层、间隔件依次层叠的带有间隔件的半导体背面用薄膜。将此半导体背面用薄膜作为比较例2的样品。
<比较例3>
使用所得到的上述粘接层(5)与粘合薄膜(2),作为金属层而使用50μm厚的铜箔,以与实施例1同样的方法而制成比较例3的半导体背面用薄膜。
对于有关实施例1~3及比较例1~3的半导体背面用薄膜进行以下的测定、评估。将其结果示于表1。
(表面自由能)
在有关上述实施例、比较例的半导体背面用薄膜的粘接剂层中,将自间隔件剥离的面作为A面,将自金属层剥落的面作为B面。测定相对于该A面及B面的水及二碘甲烷的接触角(液滴容量:水2μL、二碘甲烷3μL、读取时间:滴下后30秒),再由通过测定而得到的水及二碘甲烷的接触角,使用几何平均法,利用下述的算出式而算出表面自由能。需要说明的是,比较例2因没有金属层故省略测定。
[数学式1]
γs:表面自由能
:表面自由能的极性成分
:表面自由能的分散成分
θH:水对固体表面的接触角
θI:二碘甲烷对固体表面的接触角
(剥离力)
将有关各实施例、比较例的半导体背面用薄膜的粘接剂层的间隔件剥离,切取为25mm宽度的长条状,制作基材薄膜与粘合剂层、金属层、粘接剂层依次层叠的试验片。通过2kg的辊使形状保持胶带(日本积水化学工业公司制、商品名:FORTE)贴合于粘接剂层的表面而制作成试验片,将该试验片分为“切割胶带及金属层”和“粘接剂层及补强胶带”的各层叠体并利用株式会社日本东洋精机制作所制的拉张强度试验机(VE10)来把握,以线速300mm/min测定了粘接剂层与金属层之间的剥离力。需要说明的是,剥离力的单位为[N/25mm]。需要说明的是,比较例2没有金属层故省略测定。
(吸水率)
将有关各实施例、比较例的半导体背面用薄膜的粘接剂层切断为50×50mm的尺寸来作为样品,使样品在真空干燥机中以120℃进行3小时干燥,在干燥器中放冷后,测定干燥质量而作为M1。将样品在室温下浸渍于蒸馏水中24小时然后取出,以滤纸擦拭样品表面,马上进行秤量而作为M2。利用下式(1)而算出吸水率。
吸水率(vol%)=[(M2-M1)/(M1/d)]×100 (1)
在此,d为薄膜的密度。
(饱和吸湿率)
将有关各实施例、比较例的半导体背面用薄膜的粘接剂层切断为直径100mm的圆形而作为样品,使样品在真空干燥机中以120℃进行3小时干燥,在干燥器中放冷后,测定干燥质量而作为M1。将样品在85℃、85%RH的恒温恒湿槽中进行吸湿然后取出,马上进行秤量而作为M2。利用下式(2)而算出饱和吸湿率。
饱和吸湿率(vol%)=[(M2-M1)/(M1/d)]×100 (2)
在此,d为薄膜的密度。
(残存挥发性组分)
将有关各实施例、比较例的半导体背面用薄膜的粘接剂层切断为50×50mm尺寸而作为样品,测定样品的初期的质量而作为M1,将样品在热风循环恒温槽中以200℃进行2小时加热后,进行秤量而作为M2。利用下式(3)而算出残存挥发性组分。
残存挥发性组分(wt%)=[(M2-M1)/M1]×100 (3)
(碎片)
将有关各实施例、比较例的半导体背面用薄膜的间隔件剥离,将粘接剂层以70℃、10秒加热贴合于厚度50μm的硅晶片之后,切割成10mm×10mm的芯片。取出切割后的芯片,计测芯片的缺口,将缺口尺寸为10μm以下者作为良品而评估为“○”、将缺口尺寸为超过10μm者作为不良品而评估为“×”。
(芯片翘曲量)
将有关各实施例、比较例的半导体背面用薄膜的间隔件剥离,将粘接剂层以70℃、10秒加热贴合于厚度50μm的硅晶片之后,切割成10mm×10mm的芯片,将切割后的层叠体放置于玻璃基板上。此时,以芯片则成为玻璃板侧的方式而放置,测定层叠体与玻璃板的距离的最大值而作为芯片翘曲量。
(可靠性(回焊时发生破裂个数))
将有关各实施例、比较例的半导体背面用薄膜的间隔件剥离,将粘接剂层粘贴于厚度200μm的硅晶片的背面,将上述的粘接剂层(1)进一步贴合于硅晶片的表面,切割成7.5mm×7.5mm之后,在温度160℃、压力0.1MPa、时间1秒的条件下,装配在银镀敷处理后的引线框上。进一步地,用密封材料(KE-1000SV、京瓷化学株式会社制、商品名)进行模压,对于各实施例及各比较例而制作各20个样品。
将样品,在85℃/60质量%RH的恒温恒湿层进行196小时的处理之后,反复进行3次使样品通过以样品表面的最高温度为260℃且持续20秒的方式而设定的IR(红外线)回焊炉、再通过室温放置而进行冷却的处理。对于各实施例及各比较例,针对进行了如上处理的20个样品观察有无破裂,示出20个的样品中的发生破裂的样品的个数。需要说明的是,对于观察有无破裂时,使用超声波探査装置(Scanning Acoustic Tomograph:SAT)以透射法观察各样品,将各构件间观察到剥离者全视为破裂。
[表1]
实施例1 | 实施例2 | 实施例3 | 比较例1 | 比较例2 | 比较例3 | |
表面能(A面) | 40 | 55 | 35 | 29 | 40 | 40 |
表面能(B面) | 40 | 49 | 37 | 32 | - | 40 |
剥离力(N/25mm) | 0.7 | 0.9 | 0.3 | 0.4 | - | 0.1 |
吸水率 | 1 | 1.5 | 1 | 0.9 | 1 | 2 |
饱和吸水率 | 0.7 | 1 | 0.7 | 0.7 | 0.7 | 1.4 |
残存挥发性组分 | 3 | 3 | 3 | 3 | 3 | 4 |
碎片 | ○ | ○ | ○ | ○ | ○ | × |
芯片翘曲 | 0mm | 0mm | 0mm | 0mm | 1mm | 0mm |
回焊时破裂 | 0/20 | 0/20 | 0/20 | 1/20 | 1/20 | 1/20 |
如表1所示,有关实施例1~3的半导体背面用薄膜为粘接剂层的粘接于半导体芯片的一侧的面(A面)及与金属剂层粘接侧的面(B面)的表面自由能均为35mJ/m2以上,且B阶段的粘接剂层与金属层的剥离力为0.3N/25mm以上,因此为剥离、芯片翘曲、可靠性(回焊时破裂)均良好的结果。
相对于此,有关比较例1的半导体背面用薄膜为粘接剂层的粘接于半导体芯片的一侧的面(A面)及与金属剂层粘接侧的面(B面)的表面自由能小于35mJ/m2,因此回焊时发生破裂。另外,有关比较例2的半导体背面用薄膜不具有金属层,因此芯片产生翘曲,因该翘曲而导致回焊时发生破裂。有关比较例3的半导体背面用薄膜,其在B阶段的粘接剂层与金属层的剥离力小于0.3N/25mm,因此在切割时,在半导体晶片或半导体芯片与粘接层之间、或者粘接剂层与金属层之间发生剥离,半导体芯片产生碎片(缺口),回焊时发生破裂。
符号说明
10:半导体背面用薄膜
11:基材薄膜
12:粘合剂层
13:切割胶带
14:金属层
15:粘接剂层
Claims (6)
1.一种半导体保护用薄膜,其特征在于,具有:用于贴合于半导体芯片的背面的金属层、和用于将所述金属层粘接于所述半导体芯片的背面的粘接剂层,
所述粘接剂层的粘接于所述半导体芯片的一侧的面及与所述金属剂层粘接侧的面的表面自由能均为35mJ/m2以上,
B阶段的所述粘接剂层与所述金属层的剥离力为0.3N/25mm以上。
2.如权利要求1所述的半导体保护用薄膜,其特征在于,所述粘接剂层的吸水率为1.5vol%以下。
3.如权利要求1或2所述的半导体保护用薄膜,其特征在于,所述粘接剂层的饱和吸湿率为1.0vol%以下。
4.如权利要求1至3中任一项所述的半导体保护用薄膜,其特征在于,所述粘接剂层的残存挥发性组分为3.0wt%以下。
5.如权利要求1至4中任一项所述的半导体保护用薄膜,其特征在于,
具有包含基材薄膜与粘合剂层的切割胶带,
在所述粘合剂层上设置有所述金属层。
6.如权利要求5所述的半导体保护用薄膜,其特征在于,所述粘合剂层为利用放射线的照射而使粘合力降低的放射线固化型粘合剂层。
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US11001035B2 (en) | 2016-06-10 | 2021-05-11 | Lg Hausys, Ltd. | Sandwich panel and a manufacturing method thereof |
US11198273B2 (en) | 2016-06-10 | 2021-12-14 | Lg Hausys, Ltd. | Sandwich panel and a manufacturing method thereof |
KR102657124B1 (ko) * | 2016-10-20 | 2024-04-16 | 삼성디스플레이 주식회사 | 반도체 칩, 이를 구비한 전자장치 및 반도체 칩의 연결방법 |
JP7191586B2 (ja) * | 2018-08-17 | 2022-12-19 | 株式会社ディスコ | ウエーハの一体化方法 |
CN113261084A (zh) * | 2018-12-28 | 2021-08-13 | 昭和电工材料株式会社 | 半导体装置的制造方法、膜状黏合剂及切割晶粒接合一体型膜 |
JP7112997B2 (ja) * | 2019-10-30 | 2022-08-04 | 古河電気工業株式会社 | 電子デバイスパッケージ用テープ |
KR20220142447A (ko) * | 2020-02-21 | 2022-10-21 | 린텍 가부시키가이샤 | 이면 보호막 형성용 복합체, 제1 적층체의 제조 방법, 제3 적층체의 제조 방법, 및 이면 보호막이 형성된 반도체 장치의 제조 방법 |
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US20180190532A1 (en) | 2018-07-05 |
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