CN107068809A - 紫外光发射器件 - Google Patents
紫外光发射器件 Download PDFInfo
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Abstract
公开了一种紫外光发射器件。描述了一种不使用p型半导体层的紫外光发射器件。为了产生紫外光,电子束发生器被提供,且将在电子束发生器中产生的电子束导向紫外光发生器的活性层。在活性层中,电子束经历碰撞,且由碰撞产生的电子‑空穴对由于活性层的势垒层而限于阱层中。被限制的电子和空穴通过复合产生紫外光。
Description
技术领域
本发明涉及发光器件,更具体地,涉及可发射紫外光的发光器件。
背景技术
发光二极管是通过使电子激发到导带且使空穴激发到价带的复合来产生光并发光的器件。为了发光,发光二极管具有特定的多量子阱结构。多量子阱结构具有多重交替的阱层和势垒层的薄层。也就是说,电子和空穴限于在势垒层之间形成的阱层中,且因它们的复合而发射光。这是量子限制效应。
相应地,在发光二极管中产生的光典型地由阱层的带隙能来确定。也就是说,当阱层的带隙能大时,其中产生的光的波长短,且当阱层的带隙能小时,其中产生的光的波长长。限于阱层中的电子由n型半导体层提供,且空穴由p型半导体层提供。因此,多量子阱结构形式的生光层被夹在n型半导体层与p型半导体层之间,以形成接合。
形成发光二极管的半导体层由化合物半导体制成。半导体层比生光层中的阱层需要更高的带隙能。这是用于防止生光层中产生的光在半导体层中被吸收。而且,随着产生的光的波长越来越短,形成p型半导体层变得越来越有问题。也就是说,即使当经由MOCVD工艺等形成空穴浓度不足且包含掺杂剂的p型层时,效率也会降低。这对于产生紫外光的发光二极管尤其成问题。
例如,虽然AlN、AlGaN或AlGaIn被用作形成p型半导体层的材料,但是p型半导体层中的掺杂剂活化并不容易,且由于p型半导体层的导电率低,因此效率降低。此外,基于p型GaN的半导体层的光吸收是效率降低的重要原因。
然而,尽管存在上述技术难题,但是对于紫外发光二极管的市场需求仍稳步增长。紫外发光二极管与水银灯相比在环保方面具有优势,且可被用于通过水净化、空气净化、消毒等消除人类生活环境中的污染物。
然而,由于紫外发光二极管的技术挑战问题,效率不够高,因此,紫外发光二极管未广泛应用于市场需求。
发明内容
技术问题
为了解决上述问题,本发明的技术目标是使用场效应来提供紫外光发射器件。
技术方案
为了达到目标,本发明提供一种紫外光发射器件,所述紫外光发射器件包括电子束发生器和紫外光发生器,其中,电子束发生器基于施加的电压而产生电子束,紫外光发生器与电子束发生器隔开一定空间且面向电子束发生器,以用于通过基于电子束的碰撞而产生的电子-空穴对的复合来产生紫外光。
有益效果
根据上述的本发明,碳纳米管被用于电子发射,且发射的电子在没有p型半导体层的情况下入射到紫外光发生器。入射的电子在活性层的量子阱结构中进行碰撞,以产生电子-空穴对。产生的电子-空穴对由于势垒层而限于阱层中,并通过复合来产生紫外光。因此,解决了由于p型半导体的构造而产生的以及由导电率低所导致的光学效率低的问题。
附图说明
图1是根据本发明的第一实施例的紫外光发射器件的截面图。
图2是根据本发明的示例性实施例的图1的电子束发生器的示图。
图3是根据本发明的示例性实施例的用于概念性描述紫外光器件的操作的示意图。
具体实施方式
虽然将在附图中描述且详细地在此说明特定实施例,但是本发明可以以各种形式被修改和实施。同样地,不意图将本发明限于特定公开,且应理解的是,本发明包括包含在其构思和技术范围中的所有变型、等同物和替代方案。在描述每个附图时,相同的参考标号被用于表示相同元件。
除非另外定义,否则包括在此使用的技术术语和科学术语的所有术语均具有与本发明所属领域的普通技术人员通常理解的含义相同的含义。除非在本发明中清楚地进行了定义,否则通用术语(诸如词典中定义的术语)均应按照与相关技术的语境一致的含义来理解,而不应按照理想含义或过于正式的含义来理解。
在下文中,将参照附图进一步详细地描述本发明的示例性实施例。
示例
图1是根据本发明的第一实施例的紫外光发射器件的截面图。
参照图1,根据本发明的紫外光发射器件具有电子束发生器100和紫外光发生器200。
电子束发生器100通过场效应形成电子束,并朝向紫外光发生器200发射电子。紫外光发生器200基于从电子束发生器100发射的电子的碰撞而产生电子-空穴对,并基于产生的电子-空穴对的复合而发射紫外光。
电子束发生器100具有阴极110和在阴极110上形成的电子束发射器120。阴极110被设置为使得电压可被施加到电子束发射器120。为此,阴极110具有Al、Ag、Cu、Ti、Pt、Ni、Ir或Rh。
在阴极110上形成的电子束发射器120包括碳纳米管。电子束基于施加给碳纳米管的电场而产生。优选地,电子束发射器120的至少一个碳纳米管的一端附着到阴极110上而另一端不与阴极110接触。也就是说,碳纳米管位于阴极110的表面上,且与阴极110的表面成规定角度。相应地,碳纳米管的两端之间的直线优选地不被设置为平行于阴极110的表面。
此外,反射层130可被设置在阴极110的背面。反射层130用于反射紫外光发生器200中产生的紫外光。例如,反射层130可以是分布式布拉格反射镜(DBR)层。DBR层可由HfO2、ZrO2、Al2O3、TiO2、Ti2O3或SiO2制成。
紫外光发生器200被设置为与电子束发生器100隔开规定距离。紫外光发生器200具有基底210、缓冲层220、半导体层230、活性层240和阳极250。
基底210是透明材料(诸如,蓝宝石),在基底210上生长出缓冲层220、半导体层230或活性层240是可行的,但是只要产生的紫外光的吸收可被最小化,任何材料就都是可行的。
此外,在基底210上生长出的缓冲层220可利用常规的MOCVD工艺来生长。缓冲层220被设置以减少由于基底210与半导体层230之间的晶格失配而产生的晶体失配,且优选地由紫外光吸收最少的材料形成。因此,缓冲层220可利用AlN或AlGaN材料来形成。
半导体层230形成在缓冲区220上。半导体层230可具有特定导电类型。相应地,半导体层230可形成为n型或p型。假设半导体层230具有特定导电类型,则当与阴极250进行电连接时,可方便地实现导电。否则,半导体层可形成为本征半导体。此外,半导体层230优选地利用具有带隙能的材料形成,该材料可最小化对活性层240所产生的紫外光的吸收。因此,半导体层230可包括AlN或AlGaN,但是只要该层具有适合于生长出活性层240的结构且为可最小化对于产生的紫外光的吸收的材料,任何材料就都是可应用的。
例如,当半导体层230形成为AlGaN层时,包括在半导体层230中的Ga元素的含量通过在活性层240中产生的紫外光的波长来确定。例如,对于作为在200nm至280nm范围内的紫外光的UV-C,与作为在280nm至315nm范围内的紫外光的UV-B相比,半导体层230优选地具有更少含量的Ga。相应地,对于作为在315nm至400nm范围内的紫外光的UV-A,Ga的含量可能是最高的。这是因为带隙能随着Ga的含量增加而降低。然而,只要半导体层230具有适合于不吸收在活性层240中产生的紫外光的带隙能,则任何成分都是可应用的。也就是说,半导体层230被要求具有比活性层240的量子阱结构的阱层的带隙能更高的带隙能。
活性层240被设置在半导体层230上。活性层240具有交替的势垒层和阱层的结构。阱层成分被调整为具有适合于将产生的紫外光的带隙能。也就是说,为了产生更短波长的紫外光,AlGaN中Ga的含量减少,相对地,为了产生更长波长的紫外光,Ga的含量增加。也就是说,阱层可利用AlGaN来形成,势垒层可利用AlN或AlGaN来形成。但是,势垒层的带隙能高于阱层的带隙能是优选的。
阳极250可形成在缓冲层220或半导体层230上。例如,通过台面腐蚀活性层240,可通过暴露出缓冲层220或半导体层230的表面的一部分来形成由金属材料制成的阳极250。
此外,阳极和阴极也可形成在具有量子阱结构的活性层240的部分区域。
此外,以规定的间隔距离设置电子束发生器100和紫外光发生器200,电子束发生器100与紫外光发生器200之间的空间优选地处于真空状态下。
图2是根据本发明的示例性实施例的图1的电子束发生器的示图。
参照图2,电子束发生器100包括阴极110和电子束发射器120。此外,在阴极110的背面可包括反射层130。反射层130还可形成在阴极110与电子束发射器120之间。
阴极110通过外部施加的电压而成为负极(-),且优选地由导电金属材料制成。
此外,电子束发射器120由碳纳米管制成。例如,电子束发射器120具有碳纳米管层121、电子发射材料122和图案化金属层123。
碳纳米管层121设置在阴极110上,且可覆盖整个或部分阴极110。此外,图案化金属层123设置在碳纳米管层121上,位于阴极110的表面上且形成规定角度的电子发射材料122设置在图案化金属层123的***。电子发射材料122具有单层碳纳米管或者多层碳纳米管,且沿着碳纳米管的长度方向延伸的直线不平行于阴极的表面,而是相对于阴极的表面形成规定角度。
也就是说,电子发射材料122由碳纳米管制成,所述碳纳米管形成为从阴极110与碳纳米管层121接合的拐角处朝上。
首先,具有分散在溶剂中的碳纳米管的溶液被制成覆盖阴极110。随后,溶剂蒸发以形成碳纳米管层。在碳纳米管层上形成图案化金属层123。相应地,具有规定规格布局的图案化金属层123形成在碳纳米管层121上。然后,在相邻的图案化金属层123之间形成的碳纳米管层被去除。部分去除碳纳米管层可使用诸如胶带的粘合剂来完成。也就是说,胶带粘合在碳纳米管层和图案化金属层123上,通过分层,形成在图案化金属层123之间的碳纳米管层被去除。在去除过程中,布置在图案化金属层123的较低部分的拐角部分处的碳纳米管形成为相对于阴极表面形成规定角度。也就是说,通过分层工艺,被布置为与阴极表面几乎平行的碳纳米管从此分开,使得碳纳米管的一端与阴极表面分开,从而相对于阴极的表面形成规定角度。通过这种处理,电子发射材料122形成在图案化金属层的较低的拐角部分处。
图3是根据本发明的示例性实施例的用于概念性描述紫外光器件的操作的示意图。
参照图3,由于外部施加的电力,电压被施加到电子束发生器100与紫外光发生器200之间。也就是说,电压被施加到电子束发生器100的阴极110与紫外光发生器200的阳极250之间。由于施加的电压,阴极层110上的电子发射层120形成电子束,所述电子束通过电子束发生器100与紫外光发生器200之间的间隔空间入射到紫外光发生器200上。
入射到紫外线发生器200上的电子束在具有量子阱结构的活性层240中进行碰撞。由于活性层240中的碰撞,在活性层240上形成电子-空穴对。形成的电子-空穴对的电子被激发到阱层的导带,且空穴被激发到阱层的价带。激发到导带的电子和激发到价带的空穴被势垒层限制。此外,由于势垒层而限于阱层中的电子和空穴复合,且发生光的产生。
此外,未参与复合的剩余的电子和空穴移动到半导体层230。
在上述本发明中,阴极射线发光(cathodoluminescence,CL)被用于产生紫外光。在具有夹在p型半导体层与n型半导体层之间的多量子阱结构的传统的紫外发光二极管结构中,由于p型半导体层的技术限制,光效率非常低,在大约2%左右。这是由于掺杂剂未充分地充当接受体,且因此造成了p型半导体层的导电率低。
在本发明中,未使用p型半导体层,电子-空穴对由于电子束而直接形成在活性层中。因此,可通过施加的电子束的密度和能量来确定电子-空穴对的产生,且通过这样,可实现具有高亮度和高效率的紫外光发射器件。
Claims (9)
1.一种紫外光发射器件,包括:
电子束发生器,基于施加的电压来产生电子束;
紫外光发生器,面向电子束发生器,紫外光发生器与电子束发生器隔开真空状态下的间隔空间,并且紫外光发生器用于根据基于电子束的碰撞而产生的电子-空穴对的复合来产生紫外光。
2.如权利要求1所述的紫外光发射器件,其中,电子束发生器包括:
被施加电压的阴极;
电子束发射器,形成在阴极上且用于使用碳纳米管产生电子束。
3.如权利要求2所述的紫外光发射器件,其中,电子束发射器包括:
形成在阴极上的碳纳米管层;
图案化金属层,以规定的相互间隔的空间形成在碳纳米管层上;
电子发射材料,形成在图案化金属层的较低部的拐角部分处,由碳纳米管制成且具有与阴极表面分离的端部以发射电子束。
4.如权利要求2所述的紫外光发射器件,其中,电子束发生器还包括:设置在阴极上且面向电子束发射器的反射层,用于反射紫外光,其中,阴极位于反射层与电子束发射器之间。
5.如权利要求1所述的紫外光发射器件,其中,紫外光发生器包括:
基底;
形成在基底上的半导体层;
形成在半导体层上的活性层;
用于向活性层施加电压的阳极。
6.如权利要求5所述的紫外光发射器件,其中,半导体层包括AlN或AlGaN。
7.如权利要求5所述的紫外光发射器件,其中,电子束在活性层中进行碰撞以产生电子-空穴对。
8.如权利要求7所述的紫外光发射器件,其中,产生的电子-空穴对由于活性层的势垒层而限于阱层中,且通过复合产生紫外光。
9.如权利要求5所述的紫外光发射器件,其中,阳极形成在活性层上或半导体层上。
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