CN107039556B - A kind of photovoltaic conversion structure - Google Patents
A kind of photovoltaic conversion structure Download PDFInfo
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- CN107039556B CN107039556B CN201710269695.7A CN201710269695A CN107039556B CN 107039556 B CN107039556 B CN 107039556B CN 201710269695 A CN201710269695 A CN 201710269695A CN 107039556 B CN107039556 B CN 107039556B
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- photovoltaic conversion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a kind of photovoltaic conversion structures, it include: P-type silicon substrate layer, its back side is equipped with anti-reflective film layer, its surface is equipped with the black silicon layer that cone-shaped micro-nano array is formed, PtSi film layer is successively arranged on the black silicon layer from the inside to the outside, hot hole reflecting medium layer and electrode layer form non-planar micro-structure, wherein, black silicon layer and PtSi film layer form schottky junction, and PtSi film layer, hot hole reflecting medium layer and electrode layer three form reflection optical cavity.The present invention utilizes the sunken luminous effect of black silicon and constructs nonplanar structure reflection optical cavity, so that structure of the invention can be realized strong absorption, high response in wide spectral range, and then solve the problems, such as that prior art photodetector response spectrum is narrow and solar cell photoelectric transfer efficiency is low.It the composite can be widely applied in photoproduction electro-technical field, such as solar battery technology and photodetector technology.
Description
Technical field
The photovoltaic conversion structure with wide spectrum response, high-absorbility that the present invention relates to a kind of.
Background technique
The theoretical basis of photoelectric conversion technique be derived from photoelectric effect, it be research using photon as information carrier and energy loading gage
The science of body.Photoelectric effect includes inner photoeffect and external photoeffect, wherein inner photoeffect include photovoltaic effect and
Photoconductive effect, so-called photovoltaic effect refer to that illumination makes the difference of inhomogeneos semiconductor or semiconductor and metallic combination
The phenomenon that potential difference is generated between position；So-called photoconductive effect is that illumination acts on lower Electron absorption photon energy from bond styles
Free state is excessively arrived, so that the phenomenon that material electric conductivity changes.The photoproduction electricity battery manufactured using photovoltaic effect
It is widely used in the fields such as space development, air transportation, meteorological observation, communication apparatus, signal designation；Utilize photoconductive effect system
The photodetector made is widely used in the fields such as guidance, safety check, drug identification, monitoring, imaging.
Improving photoelectric conversion efficiency is theme eternally immutable in photoelectric conversion technique, such as: solar power generation is being given
The energy consumption structure of the mankind brings revolutionary variation, and future will develop as the important support comparable with modern fossil energy
Performance source, however cost for solar power generation is higher, and photoelectric conversion efficiency is unsatisfactory, so that the big rule of solar energy power generating
Mould application is restricted；In addition, existing photodetector haves the defects that response spectrum narrow range, and photoelectric conversion efficiency is urgently
It improves, traditional PtSi/P-Si Schottky infrared detector operates mainly in middle infrared band (3~5 μm), integrates black silicon
MSM type detector also can only have preferable absorb to respond near infrared band, and above-mentioned deficiency makes narrowband response photodetector
It is not able to satisfy the demand of engineering.So developing the photoelectric detecting system of wide spectrum, strong absorption, high response, become photodetection
One of field important research direction,
Reducing reflection loss, realizing to the efficient absorption of light is to improve an important channel of photoelectric conversion efficiency；Meanwhile
Utilization efficiency to light not only can be improved in the response spectrum for widening photovoltaic conversion structure, and can widen photovoltaic conversion structure
Application range field.Therefore, a kind of photoelectric conversion knot that can be realized strong absorption, high response in wide spectral range is needed
Structure.
Summary of the invention
It is a kind of with high photoelectric conversion technical problem to be solved by the present invention lies in providing in view of the demand of the prior art
The photovoltaic conversion structure of efficiency, the present invention utilize the sunken luminous effect of black silicon and construct nonplanar structure on the light trapping structure of black silicon
Optical cavity is reflected, utmostly to improve the light path that light passes through in device architecture, to improve light utilization efficiency；Using P-type silicon,
The different absorption response spectrum of black silicon, PtSi material, so that structure of the invention can be realized strong absorption, height in wide spectral range
Response, and then solve the problems, such as that existing photovoltaic conversion structure response spectrum is narrow, photoelectric conversion efficiency is low.
To achieve the above object, the invention provides the following technical scheme:
A kind of photovoltaic conversion structure, comprising: P-type silicon substrate layer, PtSi film layer, hot hole reflecting medium layer and electrode
Layer, the P-type silicon substrate layer surface are equipped with cone-shaped micro-nano array and form black silicon layer；The black silicon surface is from the inside to the outside successively
Non-planar micro-structure is formed equipped with PtSi film layer, hot hole reflecting medium layer and electrode layer；Wherein, black silicon layer and PtSi film
Layer forms schottky junction, and PtSi film layer, hot hole reflecting medium layer and electrode layer three form reflection optical cavity.
Further, photovoltaic conversion structure of the present invention further includes being set to the anti-reflective film layer at the P-type silicon substrate layer back side；It is anti-
Reflective coating can increase the light passing amount of structure, and the thickness of anti-reflective film can be rationally designed according to functional need, according to this
Inventive embodiments, when response wave length scope is 0.4 μm~5 μm, taking central wavelength is 2.7 μm, if Refractive Index of Material is 1.5,
It is then to realize maximum antireflective effect, the thickness of anti-reflective film layer according to can be calculated in 0.4 μm~5 μm of response wave length scope
It should be 450nm.
Further, in order to reduce loss of the incident light before reaching black silicon layer, while meeting in short wavelength range
Photon excitation, the present invention in P-type silicon substrate layer with a thickness of 1~10 μm.
It is actually a kind of non-planar light trapping structure that the present invention, which has the black silicon layer of cone-shaped micro-nano array, passes through black silicon
Luminous effect is fallen into, so that light passes through multiple reflection in light trapping structure, improves the light path passed through, to improve light utilization ratio,
And then increase absorptivity；And the cone-shaped micro-nano array being prepared on P-type silicon substrate layer tends to controllably, shape size
Can be by technology controlling and process, the basal diameter of any pointed cone is any not less than 0.5 μm in the micro-nano array of black silicon layer in the present invention
The height of pointed cone is not less than 2 μm.
Further, the ratio between the height of any pointed cone and basal diameter are not less than 5: 1.
PtSi film layer is set up directly on the light trapping structure surface of black silicon layer in the present invention, forms Schottky gesture with black silicon
It builds, to make smoothly to be crossed potential barrier by the hot hole that photon excitation generates in PtSi layers, the thickness of PtSi film should be less than hole and exist
Mean free path therein, therefore, the thickness of PtSi film layer is not more than 50nm in the present invention.
In order to stop the hot hole in PtSi film layer to spread, the efficiency of hole injecting p-type silicon substrate is improved, the present invention is excellent
The material for selecting hot hole reflecting medium layer is Si3N4。
According to embodiments of the present invention, the material of electrode layer is aluminium (Al) in the present invention；In order to guarantee aluminium as electrode
Layer is used to conduct photo-generated carrier while can also be formed as reflecting layer with PtSi film layer and hole reflections dielectric layer non-planar
The reflection optical cavity of micro-structure, and then make light by multiple reflections, to absorb more luminous energy, therefore preferably,
The thickness of aluminium electrode layer is not less than 100nm in the present invention.Photovoltaic conversion structure provided by the invention can be used as photodetector or
Person's solar battery.
The principle of the present invention is as follows:
The Schottky barrier that black silicon and PtSi are formed in the present invention distinguishes the hole generated by photoconductive effect and electronics
It is hoarded in black silicon, PtSi, forms built-in field, generate photovoltaic effect, meanwhile, the carrier on both sides can be drawn by electrode
Out, electric current is formed.
To improve photoelectric conversion efficiency, the present invention passes through first rationally designs structure raising absorptivity, wherein main logical
Cross following three kinds of approach: (1) designing anti-reflective film layer at the back side of P-type silicon substrate layer, it is ensured that light before entering structure just
Has biggish throughput, to provide light radiation for subsequent absorption；(2) cone-shaped by being designed on P-type silicon substrate layer
Micro-nano array forms black silicon layer, not only increases effective sorbent surface product of structure, also makes light in cone-shaped micro-nano array
Between carry out multiple reflections, improve light stroke, the probability for improving absorptivity, increasing photoelectric conversion；(3) pass through black silicon layer
On PtSi film layer, hot hole reflecting medium layer and this three of electrode layer form nonplanar structure and reflect optical cavity, increase light
Transmission light path, it is secondary on the basis of black silicon light trapping structure to improve the light absorption that reflection generates and utilize, greatly reduce light because
The energy loss generated is leaked out, with the probability for absorbing more luminous energy, increasing photoelectric conversion.
In addition to this, the present invention also widens the response spectrum of photovoltaic conversion structure by following technological means: due to this hair
Bright middle P-type silicon material, black silicon material, PtSi material have different forbidden bandwidths, light when by different material layers,
The light of different-waveband is absorbed response by different materials respectively, therefore total absorption response spectrum of the photovoltaic conversion structure is opened up
Width, to realize the absorption response in wide spectral range；Further, the impurity energy level that black silicon introduces during the preparation process makes
The forbidden bandwidth for obtaining black silicon further decreases, and enables to further widen absorption response spectrum range.P-type silicon material is multipair
The absorption response spectrum for answering short-wave band, the visible light and near-infrared being more common in 1.1 μm；The multipair suction for answering medium wave band of black silicon material
Response spectrum is received, is more common in infrared in 1.1 μm~5 μm close；The multipair absorption spectrum for answering long-wave band of PtSi material, is more common in 3 μ
Mid and far infrared outside m.The response of its grading absorption may refer to attached drawing 3.
Compared with prior art, the invention has the following advantages:
The present invention is responded by grading absorption, has widened the response range of spectrum, and then has widened application model of the invention
It encloses, is able to solve the narrow problem of prior art photodetector response spectrum；The present invention is by falling into luminous effect and non-planar micro- knot
Structure light reflection cavity improves the absorptivity and utilization rate of light, according in Figure of description 4 it can be seen that black silicon material of the present invention not
In the case where doping, absorptivity can be greatly improved by this new structure.Therefore, photoelectric conversion knot provided by the present invention
Structure can realize strong absorption, high response in wide spectral range, can be widely applied in photoproduction power technology, such as solar battery
Technology and photodetector technology.
Detailed description of the invention
Fig. 1 is the schematic diagram of photovoltaic conversion structure of the present invention；
Fig. 2 is that photovoltaic conversion structure of the present invention is enhanced by black silicon light trapping structure (block arrow) and optical cavity structure (thin arrow)
The schematic diagram of absorption efficiency；
Fig. 3 is the schematic diagram of photovoltaic conversion structure wide spectrum of the present invention segmentation response；
Fig. 4 is the specific embodiment of the invention in the absorptivity of 0.4~1.7 mu m waveband, transmissivity, reflectivity simulation curve；
Wherein, 1 is anti-reflective film layer, and 2 be P-type silicon substrate layer, and 3 be black silicon layer, and 4 be PtSi film layer, and 5 is anti-for hot hole
Dielectric layer is penetrated, 6 be electrode layer.
Specific embodiment
The principle of the invention is described in detail below in conjunction with the specific embodiment of the invention and Figure of description:
Embodiment:
It is as shown in Figure 1 the structural schematic diagram of this photovoltaic conversion structure specific embodiment, comprising: be set to P-type silicon substrate
The anti-reflective film layer 1 at 2 back side of layer and the black silicon layer 3 of the cone-shaped micro-nano array formation set on 2 surface of P-type silicon substrate layer, institute
State black 3 surface of silicon layer be successively arranged from the inside to the outside PtSi film layer 4, hot hole reflecting medium layer 5 and electrode layer 6 formed it is non-planar
Micro-structure；Wherein, black silicon layer 3 forms schottky junction, PtSi film layer 4,5 and of hot hole reflecting medium layer with PtSi film layer 4
6 three of electrode layer forms reflection optical cavity.
Specifically, in the present embodiment P-type silicon substrate layer 2 with a thickness of 2 μm；
Specifically, the bottom surface average diameter of pointed cone is 1 μm in the micro-nano array of black silicon layer 3 in the present embodiment；The height of pointed cone
Degree is 5 μm；The ratio between the height of pointed cone and basal diameter are 5: 1；
Specifically, in the present embodiment PtSi film layer 4 with a thickness of 50nm.
Specifically, the material of hot hole reflecting medium layer 5 is Si in the present embodiment3N4, with a thickness of 50nm；
Specifically, the material of electrode layer 6 is Al in the present embodiment, with a thickness of 100nm.
Photovoltaic conversion structure provided by the embodiment of the present invention can be improved absorptivity, mainly pass through following three kinds of ways
Diameter:
(1) anti-reflective film layer is designed at the back side of P-type silicon substrate layer, it is ensured that light just has larger before entering structure
Throughput, with for it is subsequent absorption light radiation is provided；
(2) black silicon layer is formed by designing cone-shaped micro-nano array on P-type silicon substrate layer, not only increase structure has
Sorbent surface product is imitated, light is also made to carry out multiple reflections between cone-shaped micro-nano array, light stroke is improved, improves light
Absorptivity, the probability for increasing photoelectric conversion；
(3) it is formed by PtSi film layer on black silicon layer, hot hole reflecting medium layer and electrode layer this three non-planar
Structure reflects optical cavity, increases the transmission light path of light, the secondary light suction for improving reflection and generating on the basis of black silicon light trapping structure
It receives and utilizes, greatly reduce light because leaking out the energy loss generated, to absorb more luminous energy, increase the several of photoelectric conversion
Rate.
As shown in Fig. 2, wherein block arrow indicates to pass through the light of black silicon light trapping structure, thin arrow expression passes through optical cavity structure
Light, as shown above by both modes can achieve the purpose that enhance absorption efficiency.
On the other hand, as shown in figure 3, the present invention is responded using grading absorption, due to P-type silicon material, black silicon in the present invention
Material, PtSi material have different forbidden bandwidths, wherein the impurity energy level that black silicon introduces during the preparation process makes black silicon
Forbidden bandwidth further decreases, and when by different material layers, the light of different-waveband is absorbed light respectively by different materials
Response, therefore total absorption response spectrum of the photovoltaic conversion structure is widened, to realize the suction in wide spectral range
Receive response.Further, the multipair absorption response spectrum for answering short-wave band of P-type silicon material is more common in visible light in 1.1 μm and close
It is infrared；The multipair absorption response spectrum for answering medium wave band of black silicon material is more common in infrared in 1.1 μm~5 μm close；PtSi material is more
The absorption spectrum of corresponding long-wave band, the mid and far infrared being more common in outside 3 μm.
Fig. 4 is the specific embodiment of the invention in the absorptivity of 0.4~1.7 mu m waveband, transmissivity, reflectivity simulation curve；
Specifically, since simulation software material depot is free of the material parameter of PtSi, the optical constant of PtSi is by instrument Filmetrics
F20 test obtains, therefore chooses test equipment and emulated in 0.4~1.7 μm of service band；Structural parameters are arranged such as preceding institute
It states；Reflectivity R, the transmissivity T for distinguishing measurement structure by the way that optical field detection device is arranged before and after structure, by utilizing formula as follows
The absorptivity of the structure is calculated:
A=1-T-R
Wherein: A is absorptivity, and T is transmissivity, and R is reflectivity.
As can be seen from Figure 4: photovoltaic conversion structure proposed by the present invention is preferable in medium-long wave band absorptivity, reaches 80%
More than；Simultaneously because anti-reflecting layer thickness cannot take into account all incident wavelengths, at shortwave end because reflectivity is bigger to a certain extent
Affect the absorption of structure, however be still maintained at 60% or more, entire wave band because black silicon light trapping structure and reflection optical cavity, thoroughly
The rate of penetrating is reduced to 1% or less, it is seen that the significant effect of structure raising light absorption.
The embodiment of the present invention is expounded in conjunction with attached drawing above, but the invention is not limited to above-mentioned specific
Embodiment, above-mentioned specific embodiment is only schematical, rather than restrictive, and those skilled in the art exist
Under enlightenment of the invention, without breaking away from the scope protected by the purposes and claims of the present invention, many shapes can be also made
Formula, all of these belong to the protection of the present invention.
Claims (10)
1. a kind of photovoltaic conversion structure characterized by comprising P type substrate layer (2), PtSi film layer (4), hot hole reflection
Dielectric layer (5) and electrode layer (6), P type substrate layer (2) surface is equipped with cone-shaped micro-nano array and is formed black silicon layer (3), described
Black silicon layer (3) surface is successively arranged PtSi film layer (4), hot hole reflecting medium layer (5) and electrode layer (6) formation from the inside to the outside
Non-planar micro-structure；Wherein, black silicon layer (3) and PtSi film layer (4) form schottky junction, and PtSi film layer (4), hot hole are anti-
It penetrates dielectric layer (5) and electrode layer (6) three forms reflection optical cavity.
2. a kind of photovoltaic conversion structure according to claim 1, which is characterized in that P-type silicon substrate layer (2) with a thickness of 1
~10 μm.
3. a kind of photovoltaic conversion structure according to claim 1, which is characterized in that appoint in the micro-nano array of black silicon layer (3)
The basal diameter of one pointed cone is not less than 0.5 μm, and the height of any pointed cone is not less than 2 μm.
4. a kind of photovoltaic conversion structure according to claim 3, which is characterized in that the height and basal diameter of any pointed cone
The ratio between be not less than 5: 1.
5. a kind of photovoltaic conversion structure according to claim 1, which is characterized in that the thickness of PtSi film layer (4) is little
In 50nm.
6. a kind of photovoltaic conversion structure according to claim 1, which is characterized in that the material of hot hole reflecting medium layer (5)
Material is Si3N4。
7. a kind of photovoltaic conversion structure according to claim 1, which is characterized in that the material of electrode layer (6) is Al.
8. a kind of photovoltaic conversion structure according to claim 7, which is characterized in that the thickness of aluminium electrode layer is not less than 100
Nanometer.
9. a kind of photovoltaic conversion structure according to any one of claims 1 to 8, which is characterized in that further include being set to p-type
The anti-reflective film layer (1) at substrate layer (2) back side.
10. a kind of photovoltaic conversion structure according to claim 9, which is characterized in that the photovoltaic conversion structure is used as
Photodetector or solar battery.
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| CN109659374A (en) * | 2018-11-12 | 2019-04-19 | 深圳市灵明光子科技有限公司 | Photodetector, the preparation method of photodetector, photodetector array and photodetection terminal |
| CN110206172A (en) * | 2019-06-10 | 2019-09-06 | 苏州大学 | A kind of passive cooling system based on micro-nano structure |
| CN110718596A (en) * | 2019-09-11 | 2020-01-21 | 复旦大学 | PN junction enhanced black silicon Schottky junction infrared detector and preparation method thereof |
| CN110931577B (en) * | 2019-11-11 | 2021-12-31 | 中国科学院上海技术物理研究所 | Artificial microstructure with longitudinally-graded plasmon enhanced infrared wide-spectrum absorption |
| CN113324662A (en) * | 2021-05-17 | 2021-08-31 | 深圳先进技术研究院 | Uncooled infrared detector and preparation method thereof |
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| US8628996B2 (en) * | 2011-06-15 | 2014-01-14 | International Business Machines Corporation | Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells |
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| US20120017966A1 (en) * | 2010-07-26 | 2012-01-26 | Chienkuo Technology University | Solar power generation system with cone -shaped protrusions array |
| CN104064627A (en) * | 2014-06-27 | 2014-09-24 | 电子科技大学 | Method for manufacturing broadband high-absorption black silicon material |
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