CN104064627A - Method for manufacturing broadband high-absorption black silicon material - Google Patents
Method for manufacturing broadband high-absorption black silicon material Download PDFInfo
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- CN104064627A CN104064627A CN201410296521.6A CN201410296521A CN104064627A CN 104064627 A CN104064627 A CN 104064627A CN 201410296521 A CN201410296521 A CN 201410296521A CN 104064627 A CN104064627 A CN 104064627A
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- silicon
- silicon substrate
- black silicon
- layer
- passivation layer
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 56
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000010521 absorption reaction Methods 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001020 plasma etching Methods 0.000 claims abstract description 10
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiments of the invention disclose a method for manufacturing a broadband high-absorption black silicon material. The method comprises the following steps: a P-type heavily-doped silicon substrate is obtained; the silicon substrate is etched by using the inductively coupled plasma-reactive ion etching method (ICP-RIE) to form a black silicon layer on the surface of the silicon substrate surface; and a passivation layer is deposited onto the surface of the black silicon layer. In the method of the embodiments of the invention, the P-type heavily-doped silicon substrate is adopted, and the ICP-RIE is used to etch the silicon surface, the ICP has the advantages of high etching selection ratio and good uniformity, so the advantage of high etching perpendicularity and finish degree can be realized, so that a better cross section morphology can be obtained and the advantage of less pollution can be realized. On the black silicon material obtained through etching, a layer of Al2O3 passivation layer is then deposited on the surface of the black silicon layer through atomic layer deposition (ALD), so the reflection can be reduced, and the surface charge recombination rate can be reduced.
Description
Technical field
The present invention relates to Electrophotosensitivmaterial material technical field, especially relate to a kind of high method that absorbs black silicon material of broadband of manufacturing.
Background technology
In semicon industry, crystalline silicon material due to its aboundresources, easily obtain, easily purify, easily doping, the plurality of advantages such as high temperature resistant, in fields such as microelectronics, photovoltaic industry, communications, have a very wide range of applications.But crystalline silicon itself also has its intrinsic defect simultaneously: first, surface of crystalline silicon is very high to infrared reflection of light to visible ray, if the surface of crystalline silicon is left intact, it to visible ray to the reflectivity of infrared light more than 30%, to ultraviolet reflection of light up to more than 50%; Secondly, crystalline silicon material energy gap is 1.124 electronvolt (eV) under room temperature (300K), and this absorptivity that causes it to be greater than the near infrared light of 1100 nanometers (nm) to wavelength reduces greatly.Therefore when surveying these wave bands, need to adopt the material of the infrared-sensitives such as germanium, indium gallium arsenic to substitute.But these material prices are expensive, thermodynamic property and crystal mass is poor and can not be with the drawbacks limit of existing ripe silicon technology compatibility its in the application aspect silicon-based devices.
Black silicon material is as a kind of to the new function material obtaining after common crystalline silicon material micro-structural, and near ultraviolet, the absorptivity to the light of near infrared band (250-2500nm) exceeds much than common crystalline silicon material for it.Due to the photoconductive gain of its superelevation, the photoelectric current that black silicon material produces is the hundred times of traditional silicon material, and due to advantages such as itself and the silicon technology compatibility of existing maturation are fine, has attracted the researcher of lot of domestic and foreign to study.
Before mention, the energy gap of ordinary silicon material is 1.124eV.After employing wet method (acid system or alkaline process) is carried out micro-structural processing to silicon face, the black silicon material obtaining has very high absorptivity in visible region to 1000nm left and right, but the absorptivity after 1100nm is not still very high.It is not very desirable adopting black silicon material absorptivity that simple reactive ion etching (RIE) silicon materials the obtain absorptivity after 1100nm the same.
Adopt the method that femto-second laser irradiates also can obtain black silicon material, but the black silicon material obtaining is like this owing to having introduced the doping of foreign ion, and silicon face has been carried out processing for structuring, caused it to the absorptivity of near ultraviolet-near infrared light, can reach more than 90% high-absorbility.Visible, black silicon material prepared by femtosecond laser irradiation is absorption bands wide ranges not only, and all keeps this very high absorptivity in whole broadband.But femto-second laser equipment is more expensive, and is not suitable for large area and prepares black silicon material.Therefore it is necessary, exploring simpler and easy and effective method.
Black silicon material is to process on silicon materials basis, the black silicon material obtaining after processing, its surface is pointed cone, pyramid or the needle-like of forest shape, and this makes black silicon have very large blemish, and has introduced to adulterate and reduced especially the opto-electronic conversion performance of material afterwards.
Summary of the invention
One of object of the present invention is to provide a kind of method of manufacturing black silicon material, wherein according to the black silicon material of the method manufacture, in broadband, all has high absorptivity.
Technical scheme disclosed by the invention comprises:
A kind of high method that absorbs black silicon material of broadband of manufacturing is provided, has it is characterized in that, having comprised: obtain P type heavily doped silicon substrate; Use inductively coupled plasma-reactive ion etching method to carry out etching to described silicon substrate, in described surface of silicon, form black silicon layer; In described black silicon surface deposit passivation layer.
In one embodiment of the present of invention, the step that described use inductively coupled plasma-reactive ion etching method carries out etching to described silicon substrate comprises: clean described silicon substrate; Described silicon substrate after cleaning is placed in to etch chamber, is evacuated to the first pressure, and temperature is remained on to the first temperature; In described etch chamber, with first flow, pass into sulfur hexafluoride gas, with the second flow, pass into oxygen; Add radio frequency described silicon substrate is carried out to the etching very first time.
In one embodiment of the present of invention, described the first pressure is 10
-8to 1 Pascal.
In one embodiment of the present of invention, described the first temperature is-30 to-50 degrees Celsius.
In one embodiment of the present of invention, described first flow is 500 to 1200 ml/min.
In one embodiment of the present of invention, described the second flow is 800 to 2000 ml/min.
In one embodiment of the present of invention, the described very first time is 7 to 12 minutes.
In one embodiment of the present of invention, use atomic layer deposition method in described black silicon surface deposit passivation layer.
In one embodiment of the present of invention, described passivation layer is aluminium oxide passivation layer, silicon dioxide passivation layer or silicon nitride passivation.
In the method for embodiments of the invention, employing be P type heavily doped silicon substrate, and select ICP-RIE to carry out etching to silicon face, because ICP etching selection ratio is high, good uniformity, perpendicularity and the fineness of etching are higher, therefore can obtain better Cross Section Morphology and of reduced contamination.The black silicon material obtaining after etching deposits one deck passivation layer Al by ALD in black silicon surface again
2o
3, can reduce reflection, reduce surface charge recombination rate.
Accompanying drawing explanation
Fig. 1 is the high schematic flow sheet that absorbs the method for black silicon material of the manufacture broadband of one embodiment of the invention.
Fig. 2 is the schematic cross-section of the black silicon material of method manufacture according to an embodiment of the invention.
Fig. 3 is the cross-sectional scans electron microscope picture of the black silicon material of method manufacture according to an embodiment of the invention.
Fig. 4 is the schematic cross-section of the black silicon material after black silicon face deposit passivation layer of one embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing, describe the high concrete steps that absorb the method for black silicon material of manufacture broadband of embodiments of the invention in detail.
Fig. 1 is the high schematic flow sheet that absorbs the method for black silicon material of the manufacture broadband of one embodiment of the invention, describes each step in Fig. 1 below in detail.
As shown in Figure 1, in step 10, first obtain P type heavily doped silicon substrate.
In embodiments of the invention, black silicon material is prepared based on heavily doped silicon substrate, therefore, first in step 10, obtains heavily doped silicon backing material.In an embodiment, this heavily doped silicon backing material can be P type heavily doped silicon backing material.Here, P type heavily doped silicon backing material is the silicon materials of hole conduction, and for example, it can be the silicon materials of boron of wherein having adulterated, and can be also the P type silicon of other elements of doping.
Then, in step 12, by inductively coupled plasma-reactive ion etching method (ICP-RIE), this P type heavily doped silicon substrate is carried out to etching, thereby form black silicon layer on this P type heavily doped silicon substrate surface.
In an embodiment, by the step that inductively coupled plasma-reactive ion etching method (ICP-RIE) is carried out etching to this P type heavily doped silicon substrate, may further include following step:
Clean this P type heavily doped silicon substrate;
Described silicon substrate after cleaning is placed in to etch chamber, is evacuated to the first pressure, and temperature is remained on to the first temperature;
In described etch chamber, with first flow, pass into sulfur hexafluoride gas, with the second flow, pass into oxygen;
Add radio frequency described silicon substrate is carried out to the etching very first time.
In one embodiment of the present of invention, aforesaid the first pressure can be 10
-8to 1 Pascal (Pa).
In one embodiment of the present of invention, aforesaid the first temperature can be-30 to-50 degrees Celsius.
In one embodiment of the present of invention, aforesaid first flow can be 500 to 1200 ml/min (ml/min).
In one embodiment of the present of invention, aforesaid the second flow can be 800 to 2000 ml/min (ml/min).
In one embodiment of the present of invention, the aforesaid very first time can be 7 to 12 minutes (min).
In one embodiment of the present of invention, the step of cleaning this P type heavily doped silicon substrate can comprise: described P type heavily doped silicon substrate is carried out to ultrasonic cleaning by trichloroethylene, acetone, ethanol and deionized water successively.
For example, in one embodiment of the present of invention, an instantiation of step that by inductively coupled plasma-reactive ion etching method (ICP-RIE), this P type heavily doped silicon substrate is carried out etching is as follows:
P type heavily doped silicon substrate is clean by trichloroethylene, acetone, ethanol, deionized water ultrasonic cleaning successively;
Then, the P type heavily doped silicon substrate of wash clean is put into etch chamber, be evacuated to pressure range 10
-8～1Pa, to silicon substrate, cooling also remains on-40 ℃ always, and then the flow with 500～1200ml/min passes into SF
6gas, passes into O with 800～2000ml/min
2, wait after the pressure stability in cavity, add radio frequency etching 7～12min, stop afterwards passing into gas, be again evacuated to 10
-8～1Pa, then passes into nitrogen to 1 standard atmospheric pressure, opens afterwards chamber, and P type heavily doped silicon substrate is taken out.
Like this, can obtain pointed cone or the acicular texture layer of height from 300 nanometers (nm)～5000nm, spacing from 200nm～500nm, this structure sheaf is black silicon layer.As shown in Figure 2 to Figure 3, wherein Fig. 2 is the schematic cross-section of the black silicon material that obtains (P type heavily doped silicon substrate and on black silicon layer), cross-sectional scans electron microscope (SEM) figure that Fig. 3 is black silicon material.In Fig. 2,1 is silicon substrate, and 2 is black silicon layer.
Then, in step 14, on this black silicon layer, deposition forms passivation layer.
In one embodiment of the present of invention, this passivation layer can be aluminium oxide (Al
2o
3) passivation layer.In other embodiment of the present invention, this passivation layer can be also silicon dioxide passivation layer or silicon nitride passivation.
In one embodiment of the present of invention, can use ald (ALD) method to deposit on black silicon layer and form passivation layer.
Fig. 4 show one embodiment of the invention deposition the schematic cross-section of black silicon material of passivation layer, wherein 1 is silicon substrate, 2 is black silicon layer, 3 is passivation layer.
For example, in one embodiment of the present of invention, the detailed process that use atomic layer deposition method deposits formation aluminium oxide passivation layer on black silicon layer is as follows:
First, GeiALD settling chamber and compartment are evacuated to below 0.02 holder (Torr);
Then, specimen holder is pulled out in rotation, above-mentioned etching P type heavily doped silicon substrate is later put into sample stage, to loadlock, vacuumize afterwards, after exhausting, open ALD deposition chamber door, push specimen holder and send into sample stage, continue afterwards to vacuumize 10～20 minutes (min), go up the concrete operational factor of ALD is arranged simultaneously, for example, vector gas (Carrier gas) is set to 6 to 10 mark condition milliliters (sccm) per minute, wafer heater (wafer heater) is 150 to 300 ℃, chamber wall heater (CW heater) is 50 to 80 ℃, the pipe temperature (Prcomp) that presoma enters reative cell is set to 50 to 80 ℃, cycle-index (cycle) is 200～400, presoma TMA(trimethylaluminum) correlation time, parameter was set to: electuary amount time (Dose time)=0.5 second (s)～5s, reaction time (Reaction time)=10～20 s, clarification time (Purge time)=5～20s, oxygen parameter correlation time is set to: Dose time=0.3s～3s, Reaction time=10～20 s, Purge time=15～25s.After parameter setting completes, open presoma bottle and source of oxygen valve, start ald.
Finally, after treating that ALD running finishes, close presoma bottle and source of oxygen valve, rotate and pull out specimen holder, will deposit Al
2o
3p type heavily doped silicon substrate take out.
Like this,, obtained surperficial modified passivation black silicon material.
In the method for embodiments of the invention, employing be P type heavily doped silicon substrate, and select ICP-RIE to carry out etching to silicon face, because ICP etching selection ratio is high, good uniformity, perpendicularity and the fineness of etching are higher, therefore can obtain better Cross Section Morphology and of reduced contamination.The black silicon material obtaining after etching deposits one deck Al by ALD in black silicon surface again
2o
3, can reduce reflection, reduce surface charge recombination rate.
Through test, by the black silicon material obtaining after step 12 etching, at the absorptivity of the whole wave band of 250-25000nm higher than 95%; Through ALD deposition AL
2o
3black silicon material afterwards at the absorptivity of the whole wave band of 250-25000nm higher than 98%, the black silicon material of visible method according to an embodiment of the invention manufacture has quite high absorptivity in broadband, and the method for the embodiment of the present invention is easy and simple to handle, cost is controlled.
By specific embodiment, describe the present invention above, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and can also make various modifications to the present invention, be equal to replacement, change etc., these conversion, all should be within protection scope of the present invention as long as do not deviate from spirit of the present invention.In addition, " embodiment " described in above many places represents different embodiment, can certainly be by its all or part of combination in one embodiment.
Claims (9)
1. manufacture the high method that absorbs black silicon material of broadband, it is characterized in that, comprising:
Obtain P type heavily doped silicon substrate;
Use inductively coupled plasma-reactive ion etching method to carry out etching to described silicon substrate, in described surface of silicon, form black silicon layer;
In described black silicon surface deposit passivation layer.
2. the method for claim 1, is characterized in that, the step that described use inductively coupled plasma-reactive ion etching method carries out etching to described silicon substrate comprises:
Clean described silicon substrate;
Described silicon substrate after cleaning is placed in to etch chamber, is evacuated to the first pressure, and temperature is remained on to the first temperature;
In described etch chamber, with first flow, pass into sulfur hexafluoride gas, with the second flow, pass into oxygen;
Add radio frequency described silicon substrate is carried out to the etching very first time.
3. method as claimed in claim 2, is characterized in that: described the first pressure is 10
-8to 1 Pascal.
4. the method as described in claim 2 or 3, is characterized in that: described the first temperature is-30 to-50 degrees Celsius.
5. the method as described in claim 2 or 3, is characterized in that: described first flow is 500 to 1200 ml/min.
6. method as claimed in claim 2, is characterized in that: described the second flow is 800 to 2000 ml/min.
7. method as claimed in claim 2, is characterized in that: the described very first time is 7 to 12 minutes.
8. method as claimed in any of claims 1 to 7 in one of claims, is characterized in that: use atomic layer deposition method in described black silicon surface deposit passivation layer.
9. the method as described in claim 1 or 8, is characterized in that: described passivation layer is aluminium oxide passivation layer, silicon dioxide passivation layer or silicon nitride passivation.
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| CN201410296521.6A CN104064627A (en) | 2014-06-27 | 2014-06-27 | Method for manufacturing broadband high-absorption black silicon material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039556A (en) * | 2017-04-24 | 2017-08-11 | 电子科技大学 | A kind of photovoltaic conversion structure |
| CN109216474A (en) * | 2018-09-29 | 2019-01-15 | 江苏顺风新能源科技有限公司 | Dual oxide layer PERC battery and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916787A (en) * | 2010-05-25 | 2010-12-15 | 中国科学院微电子研究所 | Black silicon solar cell and preparation method thereof |
| CN102351569A (en) * | 2011-07-08 | 2012-02-15 | 中国科学院物理研究所 | Preparation method for silicon surface anti-reflection nanometer array structure |
| US20130340824A1 (en) * | 2011-03-08 | 2013-12-26 | Alliance For Sustainable Energy, Llc | Efficient Black Silicon Photovoltaic Devices With Enhanced Blue Response |
-
2014
- 2014-06-27 CN CN201410296521.6A patent/CN104064627A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916787A (en) * | 2010-05-25 | 2010-12-15 | 中国科学院微电子研究所 | Black silicon solar cell and preparation method thereof |
| US20130340824A1 (en) * | 2011-03-08 | 2013-12-26 | Alliance For Sustainable Energy, Llc | Efficient Black Silicon Photovoltaic Devices With Enhanced Blue Response |
| CN102351569A (en) * | 2011-07-08 | 2012-02-15 | 中国科学院物理研究所 | Preparation method for silicon surface anti-reflection nanometer array structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107039556A (en) * | 2017-04-24 | 2017-08-11 | 电子科技大学 | A kind of photovoltaic conversion structure |
| CN107039556B (en) * | 2017-04-24 | 2019-01-01 | 电子科技大学 | A kind of photovoltaic conversion structure |
| CN109216474A (en) * | 2018-09-29 | 2019-01-15 | 江苏顺风新能源科技有限公司 | Dual oxide layer PERC battery and preparation method thereof |
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