CN106981544A - The preparation method and battery and its component, system of full back contact solar cell - Google Patents
The preparation method and battery and its component, system of full back contact solar cell Download PDFInfo
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- CN106981544A CN106981544A CN201710229068.0A CN201710229068A CN106981544A CN 106981544 A CN106981544 A CN 106981544A CN 201710229068 A CN201710229068 A CN 201710229068A CN 106981544 A CN106981544 A CN 106981544A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000011159 matrix material Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 235000008216 herbs Nutrition 0.000 claims abstract description 10
- 210000002268 wool Anatomy 0.000 claims abstract description 10
- 230000011218 segmentation Effects 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000002347 injection Methods 0.000 claims abstract 2
- 239000007924 injection Substances 0.000 claims abstract 2
- 210000004027 cell Anatomy 0.000 claims description 94
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 9
- 241000533950 Leucojum Species 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 3
- 210000003850 cellular structure Anatomy 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000002002 slurry Substances 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 208000035346 Margins of Excision Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The present invention relates to a kind of preparation method of full back contact solar cell and battery and its component, system.The preparation method of the present invention is mainly included the following steps that：Making herbs into wool processing is made to the preceding surface of N-type solar cell matrix；It is put into industrial diffusion furnace and boron diffusion is carried out to making herbs into wool face；Pattern is prepared in the back side with laser or corrosive slurry or barrier layer, is used as doped region；Phosphorus atoms injection is carried out using ion implantation apparatus and make annealing treatment in the TMAH etch areas of silicon chip back side；Remove the oxide layer of front and back；Silicon nitride film layer is plated in the front and back of silicon chip, the metal electrode of segmentation is prepared, with substrate formation Ohmic contact；On the metal electrode that wire is laid on to P areas and N areas respectively, the unnecessary wire of excision battery edge obtains solar cell.The beneficial effects of the invention are as follows：Reduce the surface recombination that the secondary grid of argentiferous bring reduces the production cost of chemical metallization program again.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of preparation method of full back contact solar cell
With battery and its component, system.
Background technology
Full back contact solar cell is the semiconductor devices that a kind of efficient solar energy is converted into electric energy, but it is golden
Categoryization needs to expend substantial amounts of precious metal material.At present, method for metallising the most frequently used in volume production solar cell is screen printing
Brush metal paste method, by printing silver paste or mixing aluminum paste, by high-temperature sintering process, formation possesses electrical contact, electricity and passed
Lead, weld the metallization of the functions such as interconnection.In order to form good Ohmic contact and take into account solderability, crystal silicon solar electricity
The front surface in pond typically prints silver paste or mixes aluminum paste, but silver paste or mix aluminum paste price it is general all costly, cause to contain
Accounting of the silver paste in solar cell manufacturing cost remains high.Thus searching one kind can be reduced uses containing silver paste
Measure, while can meet the battery preparation method of Ohmic contact and solderability requirement again turns into reduction manufacture of solar cells cost
One key job.
The content of the invention
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of inexpensive full back contact solar cell
Preparation method and battery and its component, system.The method for metallising of described solar cell can significantly decrease argentiferous
The usage amount of slurry, so as to reduce the production cost of solar cell.
A kind of preparation method for full back of the body solar cell that the present invention is provided, its technical scheme is：
A kind of preparation method of full back contact solar cell, comprises the following steps：
(1) N-type solar cell matrix, is selected, and making herbs into wool processing, N-type are made to the preceding surface of N-type solar cell matrix
The resistivity of solar cell matrix is 0.5~15 Ω cm；
(2), the N-type solar cell matrix after step (1) processing is put into industrial diffusion furnace making herbs into wool face is carried out
Boron spreads, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minutes；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
(3), pattern is prepared at the back side of the N-type solar cell matrix after step (2) processing, is used as p-type doping or N
Type doped region, other regions are N-type or p-type doped region；
(4), the TMAH etch areas at the N-type solar cell matrix back side after step (3) processing carries out phosphorus atoms note
Enter and make annealing treatment；The peak temperature of annealing is 700~950 DEG C, and annealing time is 30~200min；
(5), the N-type solar cell matrix after step (4) processing is put into cleaning machine, the oxygen of front and back is removed
Change layer；
(6), the N-type solar cell matrix after step (5) processing is put into PECVD device, it is equal in front and back
Plate silicon nitride film layer；
(7), the P areas of the battery back surface after plated film and N areas prepare the metal electrode of segmentation, form ohm with substrate and connect
Touch；
(8), retain full wafer battery, or battery section is welded again；
(9) on the metal electrode that, wire is laid on to P areas and N areas respectively, then heated so that wire and
Electrode formation Ohmic contact；
(10), the unnecessary wire of excision battery edge, the wire in side compartment of terrain cut-out N areas, opposite side compartment of terrain
The wire in P areas is cut off, solar cell is obtained.
Preferably, the shape of the pattern is cross, snowflake type or polygon；
Preferably, the electrode is discrete round dot, and discrete round dot is a diameter of 30-300 microns.The electrode is
Discrete line segment, the length of discontinuous line segment is 40-1000 microns, width is 40-300 microns；A diameter of 40- of wire
80 microns, the discontinuous line segment is perpendicular to the wire.
Preferably, in step (8), welded after battery is cut into 2-6 pieces.
Another aspect of the present invention provides a kind of solar cell of full back contacts, including N-type crystalline silicon matrix, its feature
It is：The N-type crystalline silicon matrix back surface, which is provided with, gos deep into mutually staggered p-type doped region and n-type doping region,
It is provided with the p-type doped region on P areas metal electrode, the n-type doping region and is provided with N areas metal electrode；The P areas
Metal electrode and N areas metal electrode are provided with the wire of formed Ohmic contact；With N areas and P areas metal electrode
The wire for forming Ohmic contact stretches out the N-type crystalline silicon matrix in opposite direction successively.
Preferably, P areas metal electrode and N areas metal electrode are segmented electrode.
Another aspect of the present invention provides a kind of preparation method of the solar cell module of full back contacts, and its feature exists
In：After the step (10) described in claim 1, increase step (11)：
(11), the N areas wire and busbar of a piece of battery are welded together, then by this busbar and another electricity
The P areas welded wire in pond forms component to battery strings, lamination is obtained together.
Another aspect of the invention provides a kind of solar cell module of full back contacts, including full back contact solar electricity
Pond and busbar；The full back contact solar cell is the full back contact solar cell described in claim any one of 6-7；
The busbar is arranged between the adjacent full back contact solar cell.
Another aspect of the invention provides a kind of solar cell system, includes the solar battery group of at least one series connection
Part, the solar cell module is a kind of solar cell module as described above.
The implementation of the present invention includes following technique effect：
The technological merit of the present invention is mainly reflected in：P-type or n-type doping region overleaf uses cross or snowflake type
Or polygon pattern so that N/P doped regions deeply interlock mutually, it is possible to reduce N/P repeat unit, reduce metallization face
Product.Replace partial silver slurry to form secondary grid using copper cash, not only reduced surface recombination that the secondary grid of argentiferous bring but also reduced
The production cost of chemical metallization program.Compared to existing metallization process, what the present invention can save general 50-70% contains silver paste
Expect consumption.
Brief description of the drawings
Fig. 1 is a kind of full back contact solar cell schematic diagram of the embodiment of the present invention, wherein the state shown is preparation
Before the electrode of matrix formation Ohmic contact.
Fig. 2 be a kind of full back contact solar cell schematic diagram of the embodiment of the present invention, wherein the state shown for prepare with
After the electrode of matrix formation Ohmic contact.
Fig. 3 is a kind of full back contact solar cell schematic diagram of the embodiment of the present invention, wherein the state shown is to be coated with heat
After wire, thermo-sensitive conductive layer and the secondary grid formation Ohmic contact of segmentation of quick conductive material.
Fig. 4 is a kind of full back contact solar cell schematic diagram of the embodiment of the present invention, wherein the state shown is using sharp
Light or electric arc are discontinuously cut off after wire.
Fig. 5 is a kind of full back contact solar cell schematic diagram of the embodiment of the present invention, wherein the state shown is busbar
Battery strings are obtained with the N areas welded wire of a piece of battery, then a piece of P areas welded wire with.
Fig. 6 is a kind of battery structure schematic diagram of full back contact solar cell of the embodiment of the present invention.
1st, the P doped regions (or N doped regions) of cell backside；2nd, the N doped region opposite with 1 (or P doped regions)；3rd, P areas
The electrode in (or N areas)；4th, the electrode in (or the P areas) in N areas；5th, with the wire of P areas (or N areas) electrode formation Ohmic contact；6、
With the wire of N areas (or P areas) electrode formation Ohmic contact；7th, busbar.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing, it should be pointed out that described reality
Apply example and be intended merely to facilitate the understanding of the present invention, and do not play any restriction effect to it.
Referring to shown in Fig. 1-4, the preparation method of a kind of full back contact solar cell of the present embodiment, mainly including following
Step：
(1) N-type solar cell matrix, is selected, and making herbs into wool processing is made to the preceding surface of N-type solar cell matrix；N-type
The resistivity of solar cell matrix is 0.5~15 Ω cm；
(2), the N-type solar cell matrix after step (1) processing is put into industrial diffusion furnace making herbs into wool face is carried out
Boron spreads, and boron source is preferred to use Boron tribromide, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minutes；After boron diffusion
Sheet resistance value is 40-100 Ω/sqr；
(3), pattern will be prepared at the back side of battery after step (2) processing, as p-type doping or N types doped region 2,
Other regions are N-type or p-type doped region 1；Laser or the scheme on corrosive slurry or barrier layer can be used by preparing pattern, and pattern can
To use cross or snowflake type or polygon so that N/P doped regions deeply interlock mutually, such as Fig. 1 of the structure after plated film institutes
Show；
(4), the TMAH etch areas at the silicon substrate back side after step (3) processing carries out phosphorus atoms using ion implantation apparatus
Inject and make annealing treatment；The peak temperature of annealing is 700~950 DEG C, and annealing time is 30~200min, and environment source of the gas is preferred
For nitrogen and oxygen；
(5), the silicon substrate after step (4) processing is put into cleaning machine, the oxide layer of front and back is removed；
(6), the N-type solar cell matrix after step (5) processing is put into PECVD device, it is equal in front and back
Plate silicon nitride film layer；
(7), the N-type solar cell after step (6) processing is prepared to the metal electricity of segmentation in the P areas of back surface and N areas
Pole, with substrate formation Ohmic contact；Structure after sintering is as shown in Fig. 2 including P areas (or N areas) metal electrode 3 and N areas
(or P areas) metal electrode 4, both constitute the secondary grid of segmentation；
(8), retain the full wafer battery of the N-type solar cell after step (7) processing, or battery section is welded again
Connect；
(9), on the N-type solar cell after step (8) processing, wire 5 and 6 is laid on P areas and N areas respectively
On metal electrode, then heated so that wire and electrode formation Ohmic contact, as shown in Figure 3；
(10) it is, that the N-type solar cell after step (9) processing is more using laser method or arc process compartment of terrain margins of excision
Remaining conductor wire, the wire in side cut-out N areas, the wire in opposite side cut-out P areas, as shown in Figure 4.
Preferably, can also be by the N-type solar cell after step (10) processing, the N areas wire 6 of a piece of battery and remittance
Stream bar 7 welds together, then the P areas wire 5 of this busbar 7 and another battery is welded together obtains battery strings,
As shown in Figure 5.
The solar cell obtained using the above method can reduce N/P repeat unit, reduce metallization area, and
Partial silver slurry can be replaced using metal wire (preferably copper cash), both reduce the surface recombination that the secondary grid of argentiferous are brought, and subtracted again
The production cost of chemical metallization program is lacked.Compared to existing front-side metallization technique, the present invention can save general 50-70%
Consumption containing silver paste.
It is following to be described in detail with specific embodiment：
(1) solar cell matrix, is selected, the present embodiment selects 156.75mm*156.75mm N-type crystalline silicon matrix,
And making herbs into wool processing is made to the surface of N-type crystalline silicon matrix；The resistivity of N-type crystalline silicon matrix is 0.5~15 Ω cm, preferably 3
~7 Ω cm, its thickness is 50~300 μm, preferably 80~200 μm.
(2), the N-type solar cell matrix after step (1) processing is put into industrial diffusion furnace making herbs into wool face is carried out
Boron spreads, and boron source uses Boron tribromide, and diffusion temperature is 920-1000 DEG C, and the time is 60-180 minutes；Sheet resistance after boron diffusion
It is worth for 40-100 Ω/sqr, preferably 70-90 Ω/sqr.
(3), the silicon substrate after step (2) processing is carried out back-etching with laser to remove BSG (Pyrex), then used
TMAH etches diffused layer of boron.
(4), the TMAH etch areas at the silicon substrate back side after step (3) processing carries out phosphorus atoms using ion implantation apparatus
Inject and make annealing treatment；The peak temperature of annealing is 700~950 DEG C, and annealing time is 30~200min, and environment source of the gas is preferred
For nitrogen and oxygen.
(5), the silicon substrate after step (4) processing is put into cleaning machine, the oxide layer of front and back is removed.
(6), the N-type solar cell matrix after step (5) processing is put into PECVD device, it is equal in front and back
Plate silicon nitride film layer.
(7), the N-type solar cell after step (6) processing is prepared to the metal electricity of segmentation in the P areas of back surface and N areas
Pole, with substrate formation Ohmic contact.；
(8), retain the full wafer battery of the N-type solar cell after step (7) processing, or battery section is welded again
Connect；
(9), on the N-type solar cell after step (8) processing, wire is laid on to the gold in P areas and N areas respectively
Belong on electrode, then heated so that wire and electrode formation Ohmic contact；
(10) it is, that the N-type solar cell after step (9) processing is more using laser method or arc process compartment of terrain margins of excision
Remaining conductor wire, the wire in side cut-out N areas, the wire in opposite side cut-out P areas.
As shown in fig. 6, the present embodiment additionally provides a kind of solar cell, including N-type crystalline silicon matrix, the N-type is brilliant
Body silicon substrate back surface, which is provided with, gos deep into mutually staggered p-type doped region 1 and n-type doping region 2, the p-type doping
It is provided with region 1 on P areas metal electrode 3, the n-type doping region 2 and is provided with N areas metal electrode 4；P areas metal electricity
Pole 3 and N areas metal electrode 4 are provided with the wire 5,6 of formed Ohmic contact；With N areas and P areas metal electrode shape
Wire into Ohmic contact stretches out the N-type crystalline silicon matrix in opposite direction successively.
Preferably, P areas metal electrode 3 and N areas metal electrode 4 are segmented electrode.Electrode can be discrete
Round dot or discrete line segment, a diameter of 30-300 microns of discontinuous round dot, the length of discontinuous line segment is micro- for 40-1000
Rice, the width of the discontinuous line segment is 40-300 microns, a diameter of 40-200 microns of the metal wire；Discrete lines
Perpendicular to wire.
Wherein, wire can set 100~200.Using doping graphic designs mutually deeply staggeredly, it is possible to reduce
N/P repeat unit, reduces metallization area, replaces partial silver slurry to form secondary grid using copper cash, both reduces argentiferous
The surface recombination that secondary grid are brought reduces the production cost of chemical metallization program again.Compared to the full back contacts sun of existing silk-screen printing
Energy battery process, the present invention can save general 50-70% consumption containing silver paste.
The present embodiment additionally provides a kind of preparation method of full back contact solar cell component, described in claim 1
The step of (10) after, increase step (11)：
(11), the N areas wire and busbar of a piece of battery are welded together, then by this busbar and another electricity
The P areas welded wire in pond forms component to battery strings, lamination is obtained together.
The present embodiment additionally provides a kind of solar cell module, including be from top to bottom sequentially connected preceding layer material, envelope
Package material, solar cell, busbar 7, encapsulating material, backboard, solar cell are a kind of above-mentioned solar cells, described
Busbar 7 is arranged between adjacent solar battery, for Ohmic contact between solar cell.The solar energy of the present embodiment
The structure and working principle of battery component uses technology well known in the art, and the solar cell module that the present invention is provided changes
Enter to only relate to above-mentioned solar cell, other parts are not modified.Therefore this specification is only to solar cell and its system
Preparation Method is described in detail, and the miscellaneous part and operation principle of solar cell module are repeated no more here.People in the art
Member is in the content basis that this specification is described, you can realize the solar cell module of the present invention.
The present embodiment additionally provides a kind of solar cell system, includes the solar cell module of at least one series connection,
Solar cell module is a kind of above-mentioned solar cell module.The structure of the solar cell system of the present embodiment and work
Principle uses technology well known in the art, and the improvement of the solar cell system of the invention provided only relates to above-mentioned solar energy
Other parts are not modified by battery.Therefore this specification is only described in detail to solar cell and preparation method thereof, to the sun
The miscellaneous part and operation principle of energy battery system are repeated no more here.The content that those skilled in the art describe in this specification
On the basis of, you can realize the solar cell system of the present invention.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than to present invention guarantor
The limitation of scope is protected, although being explained with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent substitution, without departing from the reality of technical solution of the present invention
Matter and scope.
Claims (10)
1. a kind of preparation method of full back contact solar cell, it is characterised in that：Comprise the following steps：
(1) N-type solar cell matrix, is selected, and making herbs into wool processing, the N-type sun are made to the preceding surface of N-type solar cell matrix
The resistivity of energy cell matrix is 0.5~15 Ω cm；
(2), the N-type solar cell matrix after step (1) processing is put into industrial diffusion furnace boron expansion is carried out to making herbs into wool face
Dissipate, diffusion temperature is 920-1000 DEG C, the time is 60-180 minutes；Sheet resistance value after boron diffusion is 40-100 Ω/sqr；
(3), pattern is prepared at the back side of the N-type solar cell matrix after step (2) processing, is mixed as p-type doping or N-type
Miscellaneous region, other regions are N-type or p-type doped region；
(4), the TMAH etch areas at the N-type solar cell matrix back side after step (3) processing carries out phosphorus atoms injection simultaneously
Annealing；The peak temperature of annealing is 700~950 DEG C, and annealing time is 30~200min；
(5), the N-type solar cell matrix after step (4) processing is put into cleaning machine, the oxidation of front and back is removed
Layer；
(6), the N-type solar cell matrix after step (5) processing is put into PECVD device, plated in front and back
Silicon nitride film layer；
(7), the P areas of the battery back surface after plated film and N areas prepare the metal electrode of segmentation, with substrate formation Ohmic contact；
(8), retain full wafer battery, or battery section is welded again；
(9) on the metal electrode that, wire is laid on to P areas and N areas respectively, then heated so that wire and electrode
Form Ohmic contact；
(10), the unnecessary wire of excision battery edge, the wire in side compartment of terrain cut-out N areas, opposite side compartment of terrain cut-out P
The wire in area, obtains solar cell.
2. preparation method according to claim 1, it is characterised in that：The shape of the pattern be cross, snowflake type or
Polygon.
3. preparation method according to claim 1 or 2, it is characterised in that：The electrode is discrete round dot, discontinuous
Round dot it is a diameter of 30-300 microns.
4. preparation method according to claim 1 or 2, it is characterised in that：The electrode is discrete line segment, discontinuous
The length of line segment is 40-1000 microns, width is 40-300 microns；A diameter of 40-80 microns of wire, the discontinuous line
Section is perpendicular to the wire.
5. the preparation method according to claim 1 or 2 or 3, it is characterised in that：In step (8), battery is cut into
Welded after 2-6 pieces.
6. a kind of full back contact solar cell, including N-type crystalline silicon matrix, it is characterised in that：The N-type crystalline silicon matrix back of the body
Surface, which is provided with, gos deep into mutually staggered p-type doped region and n-type doping region, and P is provided with the p-type doped region
N areas metal electrode is provided with area's metal electrode, the n-type doping region；P areas metal electrode and N areas metal electricity
Pole is provided with the wire of formed Ohmic contact；The wire of Ohmic contact is formed with N areas and P areas metal electrode successively
The N-type crystalline silicon matrix is stretched out in opposite direction.
7. solar cell according to claim 6, it is characterised in that：P areas metal electrode and N areas metal electrode are equal
For segmented electrode.
8. a kind of preparation method of full back contact solar cell component, it is characterised in that：In the step described in claim 1
(10) after, step (11) is increased：
(11), the N areas wire and busbar of a piece of battery are welded together, then by this busbar and another battery
P areas welded wire forms component to battery strings, lamination is obtained together.
9. a kind of solar cell module of full back contacts, it is characterised in that：Including full back contact solar cell and busbar；
The full back contact solar cell is the full back contact solar cell described in claim any one of 6-7；The busbar
It is arranged between the adjacent full back contact solar cell.
10. a kind of solar cell system, includes the solar cell module of at least one series connection, it is characterised in that：It is described too
Positive energy battery component is a kind of solar cell module described in claim 9.
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