CN106252449A - Local doping front-surface field back contact battery and preparation method thereof and assembly, system - Google Patents
Local doping front-surface field back contact battery and preparation method thereof and assembly, system Download PDFInfo
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- CN106252449A CN106252449A CN201610740237.2A CN201610740237A CN106252449A CN 106252449 A CN106252449 A CN 106252449A CN 201610740237 A CN201610740237 A CN 201610740237A CN 106252449 A CN106252449 A CN 106252449A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 131
- 239000011159 matrix material Substances 0.000 claims abstract description 126
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 239000012528 membrane Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 31
- 238000002347 injection Methods 0.000 claims description 24
- 239000007924 injection Substances 0.000 claims description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 18
- -1 boron ion Chemical class 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 12
- 238000002513 implantation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229910017107 AlOx Inorganic materials 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 239000012670 alkaline solution Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 235000008216 herbs Nutrition 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 238000003854 Surface Print Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 241000628997 Flos Species 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of local doping front-surface field back contact battery and preparation method thereof and assembly, system.The local doping front-surface field back contact battery of the present invention, including N-type crystalline silicon matrix, the front surface of N-type crystalline silicon matrix is followed successively by local doping n+ front-surface field and front surface passivated reflection reducing membrane from inside to outside, and the back surface of N-type crystalline silicon matrix is followed successively by alternately arranged back surface p+ doped region and back surface n+ doped region, back surface passivation film and back surface metal electrode from inside to outside.It provides the benefit that: only the front surface regional area at N-type crystalline silicon matrix carries out n+ doping, remaining region undopes, thus prepare the front-surface field of local doping, this structure not only reduces the compound of front-surface field self but also can provide the field passivation effect of excellence to N-type crystalline silicon matrix, and made battery has higher open-circuit voltage, short circuit current and conversion efficiency.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to a kind of local doping front-surface field back contact battery and
Its preparation method and assembly, system.
Background technology
Solaode is a kind of semiconductor device converting light energy into electric energy, relatively low production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.For the most conventional solaode, its p+ doped region
Contact electrode contacts electrode with n+ doped region and lays respectively at the tow sides of cell piece.The front of battery is sensitive surface, front
The sunlight that the covering of Metal contact electrode will cause a part incident is blocked reflection by metal electrode, causes a part of light
Learn loss.The area coverage of the front metal electrode of common crystal silicon solar batteries, about 7%, reduces the front of metal electrode
Covering can directly improve the energy conversion efficiency of battery.
Back contact battery, is that p+ doped region and n+ doped region are both placed in cell backside (non-illuminated surface) by one
Battery, the sensitive surface of this battery blocks without any metal electrode, thus effectively increases the short circuit current of cell piece, makes cell piece
Energy conversion efficiency be improved.Owing to PN junction is positioned at the back side of battery, the generation of photo-generated carrier is mainly attached at front surface
Closely, carrier needs the place arriving the back side through whole silicon wafer thickness just can be collected.If front surface passivation is bad, photoproduction
Carrier can be easy to just be combined before arriving the back side and reduce efficiency.Therefore, good front surface passivation seems particularly
Important.
The means of common back contact battery front surface passivation are to introduce the height knot of a n+/n at front surface, referred to as
Front-surface field.Front-surface field can give the field passivation effect that the offer of N-type silicon substrate is good, reduces photo-generated carrier at front surface
Recombination rate.Front-surface field generally by phosphorus diffusion or ion implanting method formed.The doping content of phosphorus is the highest, front
Surface field self compound the biggest, dark saturation current density J after passivation0The highest；If but the doping content of phosphorus is too low, its
The field passivation effect of N-type silicon substrate can be died down again.Therefore, find a kind of field passivation effect being both provided that excellence simultaneously self
The lowest compound front-surface field, is the key improving back contact battery conversion efficiency further.
Summary of the invention
It is an object of the invention to provide a kind of local doping front-surface field back contact battery and preparation method thereof and assembly,
System.The local doping front-surface field back contact battery of the present invention uses the front-surface field of local doping, has both decreased front surface
The compound of field self provides the field passivation effect of excellence can to again N-type crystalline silicon matrix, and it is electric that made battery has higher open circuit
Pressure, short circuit current and conversion efficiency.
For achieving the above object, the technical scheme that the present invention takes is:
A kind of local doping front-surface field back contact battery, including N-type crystalline silicon matrix, the front table of N-type crystalline silicon matrix
Face includes adulterating n+ front-surface field and undoped region in local, sets on the surface of local doping n+ front-surface field and undoped region
It is equipped with front surface passivated reflection reducing membrane；The back surface of N-type crystalline silicon matrix is followed successively by doped region, back surface passivation film from inside to outside
And with the metal electrode of doped region Ohmic contact, doped region includes back surface n+ doped region and the back of the body being arranged alternately with each other
Surface p+doped region, back surface n+ doped region is provided with n+ metal electrode, and back surface p+ doped region is provided with p+ metal
Electrode.
Wherein, the area of local doping n+ front-surface field is less than or equal to N-type crystalline silicon matrix front surface area
20%.
Wherein, local doping n+ front-surface field is linear pattern, linear pattern wide 100～200 μm, linear pattern
Between undoped region field width 500～1000 μm；Or local doping n+ front-surface field is dot pattern, and the point of dot pattern is straight
Footpath is 200～400 μm.
Wherein, the sheet resistance of local doping n+ front-surface field is 50～150 Ω/sqr, and junction depth is 0.2～2.0 μm；Back surface n
The sheet resistance of+doped region is 20～150 Ω/sqr, and junction depth is 0.3～2.0 μm；The sheet resistance of back surface p+ doped region be 20～
150 Ω/sqr, junction depth is 0.3～2.0 μm.
The preparation method of a kind of local doping front-surface field back contact battery of the present invention, comprises the following steps:
(1), front surface and back surface to N-type crystalline silicon matrix is doped process, at N-type crystalline silicon matrix respectively
Back surface forms the back surface boron ion implanted regions and back surface phosphonium ion injection zone being arranged alternately with each other, at N-type crystal
The front surface of silicon substrate forms local phosphonium ion injection zone and the undoped region without ion implanting；
(2), N-type crystalline silicon matrix is carried out the high temperature anneal；After having annealed formed local doping n+ front-surface field,
Back surface n+ doped region and back surface p+ doped region；
(3), then at the front surface formation passivated reflection reducing membrane of N-type crystalline silicon matrix, at the back surface of N-type crystalline silicon matrix
Form passivating film；
(4), N-type crystalline silicon matrix back surface prepare respectively with back surface n+ doped region and back surface p+ doped region
The metal electrode of territory Ohmic contact.
Wherein, in step (1), locally the area of phosphonium ion injection zone is less than or equal to table before N-type crystalline silicon matrix
The 20% of face area；
The implantation dosage of the phosphonium ion of the local phosphonium ion injection zone of N-type crystalline silicon matrix front surface is 1 × 1015cm-2
～4 × 1015cm-2, during ion implanting, mask is set between N-type crystalline silicon matrix front surface and ion beam, mask is arranged
Linear opening, linear opening wide 100～200 μm, non-open area wide 500～1000 μm between linear opening；Or
Arranging punctual openings on person's mask, the spot diameter of punctual openings is 200～400 μm.
The preparation method of a kind of local doping front-surface field back contact battery of the present invention, comprises the following steps:
(1), front surface and back surface to N-type crystalline silicon matrix is doped process, at N-type crystalline silicon matrix respectively
Back surface forms the back surface boron ion implanted regions and back surface phosphonium ion injection zone being arranged alternately with each other, at N-type crystal
The front surface of silicon substrate injects phosphonium ion；
(2), N-type crystalline silicon matrix is carried out the high temperature anneal, after having annealed, form n+ front-surface field, back surface n+
Doped region and back surface p+ doped region；Then the back surface at N-type crystalline silicon matrix prints one layer of whole back surface of covering
Acidproof mask, the front surface at N-type crystalline silicon matrix print one layer-selective cover N-type crystalline silicon matrix front surface acidproof
Mask；N-type crystalline silicon matrix is put in acid etching liquid, etch away the n+ front-surface field not covered by acidproof mask, by N-type
Crystalline silicon matrix is put in alkaline solution, removes acidproof mask and the acidproof mask of back surface of N-type crystalline silicon matrix front surface；
(3), then at the front surface formation passivated reflection reducing membrane of N-type crystalline silicon matrix, at the back surface of N-type crystalline silicon matrix
Form passivating film；
(4), the back surface at N-type crystalline silicon matrix is prepared and back surface n+ doped region and back surface p+ doped region Europe
The metal electrode of nurse contact.
Wherein, in step (2), selectivity cover N-type crystalline silicon matrix the acidproof mask of front surface area less than or
Equal to the area of N-type crystalline silicon matrix front surface 20%；Acidproof mask is linear opening, linear opening width 100-200 μ
M, the non-open area width 500-1000 μm between linear opening；Or acidproof mask is punctual openings, the point of punctual openings
A diameter of 200～400 μm.
Wherein, in step (2), acid etching liquid is HF and HNO3Mixed solution；Alkaline solution be potassium hydroxide solution,
Sodium hydroxide solution, tetramethyl ammonium hydroxide solution or ethylenediamine solution.
Wherein, in step (1), the method that the back surface of N-type crystalline silicon matrix is doped process is: first in N-type
Crystalline silicon matrix back surface carries out ion implanting, and injection element is boron, and implantation dosage is 0.5 × 1015cm-2～3 × 1015cm-2,
Then being selectively ion-implanted at N-type crystalline silicon matrix back surface, injection element is phosphorus, implantation dosage is 3 ×
1015cm-2～8 × 1015cm-2；During ion implanting phosphorus, mask is set between N-type crystalline silicon matrix back surface and ion beam, covers
Linear opening, linear opening wide 50～400 μm are set on film.
Wherein, in step (2), the peak temperature of annealing is 800～1100 DEG C, and annealing time is 30～200min, environment
Source of the gas is N2And O2；
In step (3), the preparation method of passivated reflection reducing membrane is to utilize PECVD device at the front surface of N-type crystalline silicon matrix
First deposition a layer thickness is the SiO of 5～30nmxDeielectric-coating, then at SiOxOn deielectric-coating, redeposited a layer thickness is 40～80nm
SiNxDeielectric-coating；The preparation method of passivating film is to utilize PECVD device or ALD equipment at the back surface of N-type crystalline silicon matrix
Make the AlO that a layer thickness is 4～20nmxDeielectric-coating, then at AlOxSurface redeposition a layer thickness of deielectric-coating be 20～
The SiN of 50nmxDeielectric-coating；
In step (4), the preparation method of metal electrode is by the method for silk screen printing N-type crystalline silicon base after treatment
Printing silver aluminium paste on the back surface p+ doped region of body, on back surface n+ doped region, printing silver slurry, is then sintered place
Reason.
Wherein, before carrying out step (1), the first front surface to N-type crystalline silicon matrix makees making herbs into wool process, N-type crystalline silicon
The resistivity of matrix is 0.5～15 Ω cm, and the thickness of N-type crystalline silicon matrix is 50～300 μm；
Before carrying out step (3), N-type crystalline silicon matrix is put in cleaning machine be carried out, drying and processing.
Present invention also offers a kind of solar module, including the front layer material from top to bottom set gradually, encapsulation
Material, solaode, encapsulating material, backsheet, a kind of local doping front-surface field back of the body that solaode is above-mentioned connects
Electric shock pond.
Present invention also offers a kind of solar cell system, including more than one solar module, solar energy
Battery component is above-mentioned solar module.
The technological merit of the present invention is mainly reflected in:
Only the front surface regional area at N-type crystalline silicon matrix carries out n+ doping, and remaining region undopes, thus prepares office
The front-surface field of portion's doping, this structure not only reduces the compound of front-surface field self but also can provide excellent to N-type crystalline silicon matrix
Different field passivation effect, made battery has higher open-circuit voltage, short circuit current and conversion efficiency.
The local doping front-surface field back contact battery of the present invention is after the passivating film completing front and rear surfaces covers, and it is hidden opens
Road voltage (Implied Voc) up to more than 700mV, dark saturation current density J0＜ 20fA/cm2, the back of the body made that prints electrode connects
Behind electric shock pond, the internal quantum efficiency of its short-wave band reaches more than 95%, and performance is better than existing battery.
Accompanying drawing explanation
Fig. 1 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
Battery structure schematic cross-section after one.
Fig. 2 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
Battery structure schematic cross-section after two.
Fig. 3 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
Battery structure schematic cross-section after three.
Fig. 4 is the electricity after the preparation method step 4 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 5 is the electricity after the preparation method step 5 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 6 is the electricity after the preparation method step 6 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 7 is the electricity after the preparation method step 7 of the local doping front-surface field back contact battery of the embodiment of the present invention 1
Pool structure schematic cross-section.
Fig. 8 is the electricity after the preparation method step 4 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Fig. 9 is the electricity after the preparation method step 5 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 10 is the electricity after the preparation method step 6 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 11 is the electricity after the preparation method step 7 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 12 is the electricity after the preparation method step 8 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 13 is the electricity after the preparation method step 9 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 14 is the electricity after the preparation method step 10 of the local doping front-surface field back contact battery of the embodiment of the present invention 2
Pool structure schematic cross-section.
Figure 15 is the preparation method step of the local doping front-surface field back contact battery of Example 1 and Example 2 of the present invention
The mask structure schematic diagram used in rapid three.
Figure 16 be the embodiment of the present invention 1 local doping front-surface field back contact battery preparation method step 4 in use
Strip perforate mask structure schematic diagram.
Figure 17 be the embodiment of the present invention 1 local doping front-surface field back contact battery preparation method step 4 in use
Point-like perforate mask structure schematic diagram.
Figure 18 be the embodiment of the present invention 2 local doping front-surface field back contact battery preparation method step 6 in use
Strip open cell mesh plate structure schematic diagram.
Figure 19 be the embodiment of the present invention 2 local doping front-surface field back contact battery preparation method step 6 in use
Point-like open cell mesh plate structure schematic diagram.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that described reality
Execute example and be intended merely to facilitate the understanding of the present invention, and it is not played any restriction effect.
The spot diameter of the dot pattern that the present invention relates to, dot pattern is if round dot, then spot diameter is diameter of a circle, as
Really dot pattern is irregular form point shape (such as square, oval or other random shape), then in spot diameter is pattern
The length of the longest edge of line.
Shown in Figure 13, a kind of local doping front-surface field back contact battery of the present embodiment, including N-type crystalline silicon base
Body, the front surface of N-type crystalline silicon matrix includes adulterating n+ front-surface field 13 and undoped region in local, table before local doping n+
The surface configuration in field, face 13 and undoped region has front surface passivated reflection reducing membrane；The back surface of N-type crystalline silicon matrix is from inside to outside
Being followed successively by doped region, back surface passivation film and the metal electrode with doped region Ohmic contact, doped region includes mutually handing over
For back surface n+ doped region 12 and the back surface p+ doped region 11 of arrangement, back surface n+ doped region 12 is provided with n+ metal
Electrode 32, back surface p+ doped region 11 is provided with p+ metal electrode 31.The local doping front-surface field back of the body of the present embodiment connects
Electric shock pond, only the front surface regional area at N-type crystalline silicon matrix carries out n+ doping, and remaining region undopes, thus prepares office
The front-surface field of portion's doping, this structure not only reduces the compound of front-surface field self but also can provide excellent to N-type crystalline silicon matrix
Different field passivation effect, made battery has higher open-circuit voltage, short circuit current and conversion efficiency.
Applicant is found by lot of experiments, and the area of local doping n+ front-surface field 13 is less than or equal to N-type crystal
The area of silicon substrate front surface 20% time, obtained back contact battery has more excellent performance, additionally it is possible to reduce cost.Office
Portion's doping n+ front-surface field 13 can be linear pattern, linear pattern wide 100～200 μm, non-between linear pattern
Doped region field width 500～1000 μm；Local doping n+ front-surface field 13 can also be dot pattern, and the spot diameter of dot pattern is
200～400 μm.The sheet resistance of local doping n+ front-surface field 13 is 50～150 Ω/sqr, and junction depth is 0.2～2.0 μm；Back surface n
The sheet resistance of+doped region 12 is 20～150 Ω/sqr, and junction depth is 0.3～2.0 μm；The sheet resistance of back surface p+ doped region 11 is
20～150 Ω/sqr, junction depth is 0.3～2.0 μm.
Preferably, p+ metal electrode 31 is aerdentalloy electrode, and n+ metal electrode 32 is silver electrode.Back surface p+ doped region
Territory 11 is linear pattern, a width of 200～3000 μm of linear pattern；Back surface n+ doped region 12 is linear pattern,
A width of 200～2000 μm of linear patterns of openings.The resistivity of N-type crystalline silicon matrix is 0.5～15 Ω cm；N-type crystal
The thickness of silicon substrate is 50～300 μm.Passivated reflection reducing membrane be thickness be the SiO of 5～30nm2Deielectric-coating 20 and thickness be 40～
The SiN of 80nmxDeielectric-coating 22；Passivating film be thickness be the AlO of 4～20nmxDeielectric-coating 21 and the SiN that thickness is 20～50nmxIt is situated between
Plasma membrane 23.
With two embodiments, the preparation method of the local doping front-surface field back contact battery of the present invention is carried out in detail below
State.
Embodiment 1
The preparation method of the local doping front-surface field back contact battery of the present embodiment, comprises the following steps:
(1), the N-type crystalline silicon matrix 10 of 156mm × 156mm, and the front surface system to N-type crystalline silicon matrix 10 are selected
Floss processes；The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, preferably 1～5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50～300 μm, preferably 80～200 μm；Complete the battery structure after this step as shown in Figure 1.
(2), ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (1) processes is used to carry out ion implanting,
Injection element is boron, and implantation dosage is 0.5 × 1015cm-2～3 × 1015cm-2, preferably 1.5 × 1015cm-2～2.5 × 1015cm-2.Complete the battery structure after this step as shown in Figure 2.
(3) ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (2) processes, is used to carry out optionally
Ion implanting, injection element is phosphorus, and implantation dosage is 3 × 1015cm-2～8 × 1015cm-2, preferably 4 × 1015cm-2～6 ×
1015cm-2.During ion implanting, mask 40 is set between N-type crystalline silicon matrix 10 back surface and ion beam.The material of mask 40
For graphite, as shown in figure 15, mask 40 arranges linear opening 41, linear opening 41 wide 50～400 μm, preferably 100～
300μm.Aperture pattern on mask 40 can also be other cycle arbitrarily arranged or arrays paracycle, and its pattern can basis
Need multiple choices, be not construed as limiting herein, only carry out citing and enumerate.The N-type crystalline silicon that open area on mask 40 is corresponding
Matrix 10 back surface is injected with boron and phosphorus, and other regions are then only boron and inject.Control the agent that the dosage of phosphorus injection injects more than boron
Amount.Complete the battery structure after this step as shown in Figure 3.
(4) ion implantation apparatus N-type crystalline silicon matrix 10 front surface after step (3) processes, is used to carry out optionally
Ion implanting, injection element is phosphorus, and implantation dosage is 1 × 1015cm-2～4 × 1015cm-2, preferably 1 × 1015cm-2～3 ×
1015cm-2.During ion implanting, mask 50 is set between N-type crystalline silicon matrix 10 front surface and ion beam.The material of mask 50
For graphite, as shown in figure 16, mask 50 arranging linear opening 51, linear opening 51 wide 100～200 μm, linear is opened
Non-open area wide 500～1000 μm between mouth 51.As shown in figure 17, mask 50 can also arrange punctual openings 52, point
A diameter of 200～400 μm of shape opening 52.Aperture pattern on mask 50 can also be other cycles arbitrarily arranged or quasi-week
Phase array, its pattern can have multiple choices as required, be not construed as limiting herein, only carries out citing and enumerates.Note on mask 50
Opening portion area less than N-type crystalline silicon matrix 10 front surface area 20%.Complete the knot of the battery after this step
Structure is as shown in Figure 4.
(5), by the N-type crystalline silicon matrix 10 after step (4) process put into and annealing furnace carries out the high temperature anneal, annealing
Peak temperature be 800～1100 DEG C, preferably 850～1000 DEG C, annealing time is 30～200min, preferably 60～
200min, environment source of the gas is preferably N2And O2.Local doping n+ front-surface field 13, back surface n+ doping is i.e. formed after having annealed
Region 12 and back surface p+ doped region 11.The N-type crystalline silicon matrix 10 back surface region that wherein opening on mask 40 is corresponding
For back surface n+ doped region 12, this is because the dosage of the phosphorus of this region injection is more than the dosage of boron, boron is in silicon simultaneously
Solid solubility phosphorus to be less than, so this region is n+ doping after Tui Huo.Other regions of back surface are back surface p+ doped region 11.Its
The sheet resistance of middle local doping n+ front-surface field 13 is 50～150 Ω/sqr, and junction depth is 0.2～2.0 μm.Back surface n+ doped region
The sheet resistance of 12 is 20～150 Ω/sqr, and junction depth is 0.3～2.0 μm.The sheet resistance of back surface p+ doped region 11 be 20～150 Ω/
Sqr, junction depth is 0.3～2.0 μm.Complete the battery structure after this step as shown in Figure 5.
(6), the N-type crystalline silicon matrix 10 after step (5) process is put in cleaning machine, be carried out and dry.Then
Mode at the front surface PECVD (plasma reinforced chemical vapour deposition) of N-type crystalline silicon matrix 10 first deposits a layer thickness
It is the SiO of 5～30nmxDeielectric-coating 20, then at SiOxRedeposited layer of sin on deielectric-coating 20xDeielectric-coating 22, the thickness of film is
40～80nm；Mode at back surface PECVD or ALD (ald) of N-type crystalline silicon matrix 10 makes one layer of AlOx
Deielectric-coating 21, the thickness of film is 4～20nm, then at AlOxThe surface redeposition layer of sin of deielectric-coating 21xFilm 23, SiNxFilm 23
Thickness be 20～50nm.The SiO of silicon substrate front surfacexDeielectric-coating 20 and SiNxDeielectric-coating 22 act as silicon substrate front surface
Passivation and the antireflective of light；The AlO of silicon substrate back surfacexDeielectric-coating 21 and SiNxDeielectric-coating 23 act as silicon substrate back of the body table
The passivation in face, simultaneously SiNxDeielectric-coating 23 also plays AlOxThe protective effect of deielectric-coating 21.Complete the knot of the battery after this step
Structure is as shown in Figure 6.
(7), by the method for silk screen printing step (6) process after N-type crystalline silicon matrix 10 back surface p+ adulterate
Aerdentalloy slurry is printed, printing silver slurry on back surface n+ doped region 12 on region 11.Print N-type crystalline silicon after terminating
Matrix 10 transmits and is sintered forming Ohmic contact into belt sintering stove, and after sintering, aerdentalloy slurry is formed and mixes with back surface p+
The p+ metal electrode 31 of miscellaneous region 11 Ohmic contact, with the n+ metal electrode 32 of back surface n+ doped region 12 Ohmic contact.Complete
Battery structure after cost step is as shown in Figure 7.The most i.e. complete the system of present invention local doping front-surface field back contact battery
Make.
Embodiment 2
The preparation method of the local doping front-surface field back contact battery of the present embodiment, comprises the following steps:
(1), the N-type crystalline silicon matrix 10 of 156mm × 156mm, and the front surface system to N-type crystalline silicon matrix 10 are selected
Floss processes；The resistivity of N-type crystalline silicon matrix 10 is 0.5～15 Ω cm, preferably 1～5 Ω cm；N-type crystalline silicon matrix 10
Thickness be 50～300 μm, preferably 80～200 μm；Complete the battery structure after this step as shown in Figure 1.
(2), ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (1) processes is used to carry out ion implanting,
Injection element is boron, and implantation dosage is 0.5 × 1015cm-2～3 × 1015cm-2, preferably 1.5 × 1015cm-2～2.5 × 1015cm-2.Complete the battery structure after this step as shown in Figure 2.
(3) ion implantation apparatus N-type crystalline silicon matrix 10 back surface after step (2) processes, is used to carry out optionally
Ion implanting, injection element is phosphorus, and implantation dosage is 3 × 1015cm-2～8 × 1015cm-2, preferably 4 × 1015cm-2～6 ×
1015cm-2.During ion implanting, mask 40 is set between N-type crystalline silicon matrix 10 back surface and ion beam.The material of mask 40
For graphite, as shown in figure 15, mask 40 arranges linear opening 41, linear opening 41 wide 50～400 μm, preferably 100～
300μm.Aperture pattern on mask 40 can also be other cycle arbitrarily arranged or arrays paracycle, and its pattern can basis
Need multiple choices, be not construed as limiting herein, only carry out citing and enumerate.The N-type crystalline silicon that open area on mask 40 is corresponding
Matrix 10 back surface is injected with boron and phosphorus, and other regions are then only boron and inject.Control the agent that the dosage of phosphorus injection injects more than boron
Amount.Complete the battery structure after this step as shown in Figure 3.
(4), ion implantation apparatus N-type crystalline silicon matrix 10 front surface after step (3) processes is used to carry out ion implanting,
Injection element is phosphorus, and implantation dosage is 1 × 1015cm-2～4 × 1015cm-2, preferably 1 × 1015cm-2～3 × 1015cm-2.Complete
Battery structure after this step is as shown in Figure 8.
(5), by the N-type crystalline silicon matrix 10 after step (4) process put into and annealing furnace carries out the high temperature anneal, annealing
Peak temperature be 800～1100 DEG C, preferably 850～1000 DEG C, annealing time is 30～200min, preferably 60～
200min, environment source of the gas is preferably N2And O2.N+ front-surface field 14, back surface n+ doped region 12 and is i.e. formed after having annealed
Back surface p+ doped region 11.The N-type crystalline silicon matrix 10 back surface region that wherein opening on mask 40 is corresponding is back surface n
+ doped region 12, this is because the dosage of the phosphorus of this region injection is more than the dosage of boron, boron solid solubility in silicon is low simultaneously
In phosphorus, so this region is n+ doping after Tui Huo.Other regions of back surface are back surface p+ doped region 11.Wherein n+ front surface
The sheet resistance of field 14 is 50～150 Ω/sqr, and junction depth is 0.2～2.0 μm.The sheet resistance of back surface n+ doped region 12 is 20～150
Ω/sqr, junction depth is 0.3～2.0 μm.The sheet resistance of back surface p+ doped region 11 is 20～150 Ω/sqr, junction depth be 0.3～
2.0μm.Complete the battery structure after this step as shown in Figure 9.
(6) back surface one layer of acidproof mask 26 of printing of the N-type crystalline silicon matrix 10, after step (5) processes, acidproof covers
Film 26 covers whole back surface.Front surface at N-type crystalline silicon matrix 10 prints one layer of acidproof mask 25, and acidproof mask 25 is only
The front surface of local complexity N-type crystalline silicon matrix 10.As shown in figure 18, wherein linear opening 61 is wide for the half tone that printing uses
100-200 μm, the non-open area width 500-1000 μm between linear opening 61, the corresponding acidproof mask 25 after ink excessively
Pattern is strip；Half tone as shown in figure 19 can also be used to print, wherein a diameter of 200～400 μ of punctual openings 62
M, the pattern of the corresponding acidproof mask 25 after ink excessively is then point-like.Complete the battery structure after this step as shown in Figure 10.
(7) the N-type crystalline silicon matrix 10 after, step (6) being processed is put in acid etching liquid, in n+ front-surface field 14 not
The region covered by acidproof mask will be etched away, and remaining region is local doping n+ front-surface field 13.Acid etching liquid
Using volume ratio is the HF/HNO of 1: 4: 103/H2O solution.Complete the battery structure after this step as shown in figure 11.
(8), the N-type crystalline silicon matrix 10 after step (7) process is put in alkaline solution, remove N-type crystalline silicon matrix
The acidproof mask 25 of 10 front surfaces and the acidproof mask 26 of back surface.Alkaline solution can be potassium hydroxide, sodium hydroxide, tetramethyl
Base ammonium hydroxide or ethylenediamine.Complete the battery structure after this step as shown in figure 12.
(9), the N-type crystalline silicon matrix 10 after step (8) process is put in cleaning machine, be carried out and dry.Then
Mode at the front surface PECVD (plasma reinforced chemical vapour deposition) of N-type crystalline silicon matrix 10 first deposits a layer thickness
It is the SiO of 5～30nmxDeielectric-coating 20, then at SiOxRedeposited layer of sin on deielectric-coating 20xDeielectric-coating 22, the thickness of film is
40～80nm；Mode at back surface PECVD or ALD (ald) of N-type crystalline silicon matrix 10 makes one layer of AlOx
Deielectric-coating 21, the thickness of film is 4～20nm, then at AlOxThe surface redeposition layer of sin of deielectric-coating 21xFilm 23, SiNxFilm 23
Thickness be 20～50nm.The SiO of silicon substrate front surfacexDeielectric-coating 20 and SiNxDeielectric-coating 22 act as silicon substrate front surface
Passivation and the antireflective of light；The AlO of silicon substrate back surfacexDeielectric-coating 21 and SiNxDeielectric-coating 23 act as silicon substrate back of the body table
The passivation in face, simultaneously SiNxDeielectric-coating 23 also plays AlOxThe protective effect of deielectric-coating 21.Complete the knot of the battery after this step
Structure is as shown in figure 13.
(10), by the method for silk screen printing step (9) process after N-type crystalline silicon matrix 10 back surface p+ adulterate
Aerdentalloy slurry is printed, printing silver slurry on back surface n+ doped region 12 on region 11.Print N-type crystalline silicon after terminating
Matrix 10 transmits and is sintered forming Ohmic contact into belt sintering stove, and after sintering, aerdentalloy slurry is formed and mixes with back surface p+
The p+ metal electrode 31 of miscellaneous region 11 Ohmic contact, with the n+ metal electrode 32 of back surface n+ doped region 12 Ohmic contact.Complete
Battery structure after cost step is as shown in figure 14.The most i.e. complete the system of present invention local doping front-surface field back contact battery
Make.
Present invention also offers a kind of solar module, including the front layer material from top to bottom set gradually, encapsulation
Material, solaode, encapsulating material, backsheet, a kind of local doping front-surface field back of the body that solaode is above-mentioned connects
Electric shock pond.
Present invention also offers a kind of solar cell system, including more than one solar module, solar energy
Battery component is above-mentioned solar module.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than the present invention is protected
Protecting the restriction of scope, although having made to explain to the present invention with reference to preferred embodiment, those of ordinary skill in the art should
Work as understanding, technical scheme can be modified or equivalent, without deviating from the reality of technical solution of the present invention
Matter and scope.
Claims (14)
1. a local doping front-surface field back contact battery, including N-type crystalline silicon matrix, it is characterised in that: described N-type crystal
The front surface of silicon substrate includes adulterating n+ front-surface field and undoped region in local, in local doping n+ front-surface field and undoped
The surface configuration in region has front surface passivated reflection reducing membrane；The back surface of described N-type crystalline silicon matrix is followed successively by doping from inside to outside
Region, back surface passivation film and the metal electrode with doped region Ohmic contact, described doped region includes being arranged alternately with each other
Back surface n+ doped region and back surface p+ doped region, described back surface n+ doped region is provided with n+ metal electrode, institute
State back surface p+ doped region and be provided with p+ metal electrode.
A kind of local doping front-surface field back contact battery the most according to claim 1, it is characterised in that: local doping n+
The area of front-surface field is less than or equal to the 20% of N-type crystalline silicon matrix front surface area.
A kind of local doping front-surface field back contact battery the most according to claim 1, it is characterised in that: local doping n+
Front-surface field is linear pattern, linear pattern wide 100～200 μm, undoped region field width 500 between linear pattern～
1000μm；Or local doping n+ front-surface field is dot pattern, and the spot diameter of dot pattern is 200～400 μm.
A kind of local doping front-surface field back contact battery the most according to claim 1, it is characterised in that: local doping n+
The sheet resistance of front-surface field is 50～150 Ω/sqr, and junction depth is 0.2～2.0 μm；The sheet resistance of back surface n+ doped region be 20～
150 Ω/sqr, junction depth is 0.3～2.0 μm；The sheet resistance of back surface p+ doped region is 20～150 Ω/sqr, junction depth be 0.3～
2.0μm。
5. the preparation method of a local doping front-surface field back contact battery, it is characterised in that: comprise the following steps:
(1), front surface and back surface to N-type crystalline silicon matrix is doped process, at the back of the body table of N-type crystalline silicon matrix respectively
Face forms the back surface boron ion implanted regions and back surface phosphonium ion injection zone being arranged alternately with each other, at N-type crystalline silicon base
The front surface of body forms local phosphonium ion injection zone and the undoped region without ion implanting；
(2), N-type crystalline silicon matrix is made annealing treatment；Local doping n+ front-surface field, back surface n+ is formed after having annealed
Doped region and back surface p+ doped region；
(3), then at the front surface formation passivated reflection reducing membrane of N-type crystalline silicon matrix, the back surface at N-type crystalline silicon matrix is formed
Passivating film；
(4), N-type crystalline silicon matrix back surface prepare respectively with back surface n+ doped region and back surface p+ doped region Europe
The metal electrode of nurse contact.
The preparation method of a kind of local the most according to claim 5 doping front-surface field back contact battery, it is characterised in that:
In step (1), locally the area of phosphonium ion injection zone is less than or equal to N-type crystalline silicon matrix front surface area
20%；
The implantation dosage of the phosphonium ion of the local phosphonium ion injection zone of N-type crystalline silicon matrix front surface is 1 × 1015cm-2～4 ×
1015cm-2, during ion implanting, mask is set between N-type crystalline silicon matrix front surface and ion beam, mask arranges linear
Opening, linear opening wide 100～200 μm, non-open area wide 500～1000 μm between linear opening；Or mask
On punctual openings is set, the spot diameter of punctual openings is 200～400 μm.
7. the preparation method of a local doping front-surface field back contact battery, it is characterised in that: comprise the following steps:
(1), front surface and back surface to N-type crystalline silicon matrix is doped process, at the back of the body table of N-type crystalline silicon matrix respectively
Face forms the back surface boron ion implanted regions and back surface phosphonium ion injection zone being arranged alternately with each other, at N-type crystalline silicon base
The front surface of body injects phosphonium ion；
(2), N-type crystalline silicon matrix is made annealing treatment, after having annealed, form n+ front-surface field, back surface n+ doped region
With back surface p+ doped region；Then back surface printing one layer covering the acidproof of whole back surface at N-type crystalline silicon matrix is covered
Film, the front surface at N-type crystalline silicon matrix prints a layer-selective and covers the acidproof mask of front surface of N-type crystalline silicon matrix；By N
Type crystalline silicon matrix is put in acid etching liquid, etches away the n+ front-surface field not covered by acidproof mask, by N-type crystalline silicon base
Body is put in alkaline solution, removes acidproof mask and the acidproof mask of back surface of N-type crystalline silicon matrix front surface；
(3), then at the front surface formation passivated reflection reducing membrane of N-type crystalline silicon matrix, the back surface at N-type crystalline silicon matrix is formed
Passivating film；
(4), N-type crystalline silicon matrix back surface prepare respectively with back surface n+ doped region and back surface p+ doped region Europe
The metal electrode of nurse contact.
The preparation method of a kind of local the most according to claim 7 doping front-surface field back contact battery, it is characterised in that:
In step (2), selectivity covers the area of the acidproof mask of front surface of N-type crystalline silicon matrix less than or equal to N-type crystalline silicon
The 20% of the area of matrix front surface；
Acidproof mask is linear opening, linear opening wide 100～200 μm, the non-open area width between linear opening
500～1000 μm；Or acidproof mask is punctual openings, the spot diameter of punctual openings is 200～400 μm.
The preparation method of a kind of local the most according to claim 7 doping front-surface field back contact battery, it is characterised in that:
In step (2), acid etching liquid is HF and HNO3Mixed solution；Alkaline solution be potassium hydroxide solution, sodium hydroxide solution,
Tetramethyl ammonium hydroxide solution or ethylenediamine solution.
10., according to the preparation method of the arbitrary described a kind of local doping front-surface field back contact battery of claim 5-9, it is special
Levying and be: in step (1), the method that the back surface of N-type crystalline silicon matrix is doped process is: first in N-type crystalline silicon
Matrix back surface carries out ion implanting, and injection element is boron, and implantation dosage is 0.5 × 1015cm-2～3 × 1015cm-2, then at N
Type crystalline silicon matrix back surface is selectively ion-implanted, and injection element is phosphorus, and implantation dosage is 3 × 1015cm-2～8 ×
1015cm-2；During ion implanting phosphorus, mask is set between N-type crystalline silicon matrix back surface and ion beam, mask arranges lines
Shape opening, linear opening wide 50～400 μm.
11. according to the preparation method of the arbitrary described a kind of local doping front-surface field back contact battery of claim 5-9, and it is special
Levying and be: in step (2), the peak temperature of annealing is 800～1100 DEG C, and annealing time is 30～200min, environment gas
Source is N2And O2；
In step (3), the preparation method of passivated reflection reducing membrane is to utilize PECVD device first to sink at the front surface of N-type crystalline silicon matrix
Long-pending a layer thickness is the SiO of 5～30nmxDeielectric-coating, then at SiOxOn deielectric-coating, redeposited a layer thickness is 40～80nm
SiNxDeielectric-coating；The preparation method of passivating film is to utilize PECVD device or ALD equipment system at the back surface of N-type crystalline silicon matrix
As the AlO that a layer thickness is 4～20nmxDeielectric-coating, then at AlOxSurface redeposition a layer thickness of deielectric-coating is 20～50nm
SiNxDeielectric-coating；
In step (4), the preparation method of metal electrode is by the method for silk screen printing N-type crystalline silicon matrix after treatment
Printing silver aluminium paste on back surface p+ doped region, on back surface n+ doped region, printing silver slurry, is then sintered.
12. according to the preparation method of the arbitrary described a kind of local doping front-surface field back contact battery of claim 5-9, and it is special
Levying and be: before carrying out step (1), the first front surface to N-type crystalline silicon matrix makees making herbs into wool process, N-type crystalline silicon matrix
Resistivity is 0.5～15 Ω cm, and the thickness of N-type crystalline silicon matrix is 50～300 μm；
Before carrying out step (3), N-type crystalline silicon matrix is put in cleaning machine be carried out, drying and processing.
13. a solar module, including the front layer material from top to bottom set gradually, encapsulating material, solaode,
Encapsulating material, backsheet, it is characterised in that: described solaode is that the arbitrary described a kind of local of claim 1-4 is mixed
Miscellaneous front-surface field back contact battery.
14. 1 kinds of solar cell systems, including more than one solar module, it is characterised in that: described solar energy
Battery component is the solar module described in claim 13.
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