CN106409956A - N-type crystalline silicon double-sided solar cell structure and preparation method thereof - Google Patents
N-type crystalline silicon double-sided solar cell structure and preparation method thereof Download PDFInfo
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- CN106409956A CN106409956A CN201610483135.7A CN201610483135A CN106409956A CN 106409956 A CN106409956 A CN 106409956A CN 201610483135 A CN201610483135 A CN 201610483135A CN 106409956 A CN106409956 A CN 106409956A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 111
- 239000002184 metal Substances 0.000 claims abstract description 111
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 43
- 238000009826 distribution Methods 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000007650 screen-printing Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 239000006071 cream Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 238000003475 lamination Methods 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000010146 3D printing Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910001111 Fine metal Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000009795 derivation Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 238000007581 slurry coating method Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an N-type crystalline silicon double-sided solar cell structure and a preparation method thereof. The N-type crystalline silicon double-sided solar cell structure sequentially comprises a front metal wire, a front local contact metal electrode, a front antireflection film, a front passivation film, a P-type doped layer, an N-type crystalline silicon substrate, an N+ region, a back passivation film, a back local contact metal electrode and a back metal wire from top to bottom, wherein fine metal wires are combined with the local contact metal electrodes through a conductive bonded material to form a conductive assembly capable of replacing a fine grid line of a battery. A main grid line or an electrode lead exports current collected on the front surface and the back surface of the battery. Due to the structure of the battery, the contact area of metal and the silicon substrate is reduced, the composite loss is reduced, the light shading area of the grid lines is significantly reduced, so that the conversion efficiency of the battery is improved, and meanwhile, the production cost is reduced by reducing the dosage of silver paste.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly to a kind of N-type crystalline silicon double-sided solar battery structure and its system
Preparation Method.
Background technology
From first piece of solaode in 1954 since AT＆T Labs's birth, crystal silicon solar energy battery has obtained widely should
With conversion efficiency is constantly lifted, production cost continuous decrease.At present, crystal silicon solar energy battery accounts for solaode world market
More than the 80% of total value, the producing line conversion efficiency of crystalline silicon battery plate has broken through 20% at present, global year adding new capacity about
50GW and speedup substantially, are constantly reduced with the degree electricity cost of thermal power generation, are expected to maintain an equal level therewith in the coming years.The crystalline silicon sun
Can battery increasingly highlight in the important function of the aspects such as ambient pressure of restructuring the use of energy, alleviate as a kind of clean energy resource.
By the doping type of base material, crystal silicon solar energy battery is divided into P-type crystal silicon solaode and N-type crystalline silicon solar energy
Battery.Compared with P-type crystal silicon solaode, N-type crystalline silicon solaode has higher conversion efficiency and impurity tolerance
Degree, and substantially free of photo attenuation.Because N-type crystalline silicon has longer minority carrier life time than P-type crystal silicon, so N-type is brilliant
Silion cell generally can make two-sided illuminated battery to increase the output of battery, and value added is typically more than 20%.
N-type crystalline silicon double-sided solar battery wants to lift competitiveness, obtains bigger development and application it is necessary to raising turns further
Change efficiency, reduce production cost simultaneously, especially will reduce the cost of the silver electrode accounting for battery production cost about 15%.N at present
If the front of type crystalline silicon double-sided solar battery and backplate be many formed by the way of silver paste silk screen printing nearly hundred thin grid and
Dry bar main grid, the Material Cost that this operation uses is expensive, and silver electrode can cause the area on cell piece surface 5%～7% to be formed to light
Block, also result in resistance loss and recombination loss, make N-type double-sided solar battery fail to fully demonstrate on odds for effectiveness.
How to be balanced between the good electric conductivity of minimizing shading-area and holding, be current N-type crystal silicon double-sided solar electricity
One focus of pond electrode research.Have benefited from the progress of Size Technology and printing technology, the width of the thin grid of electrode constantly reduces, according to
SEMI predicts, the width to the thin grid of the year two thousand twenty will be further reduced to less than 35 microns, and main grid will be using many main grids and nothing simultaneously
Main grid.Someone improves the depth-width ratio of thin grid line by the way of secondary double exposure in recent years, and the electric conductivity of electrode also makes moderate progress,
But the method can increase the usage amount of silver paste.Also someone adopts the method for making its electrode such as photoetching plating, LIP, ink-jet although can
Produce relatively thin thin grid line, but be also added significantly to the complexity of technique simultaneously, so being not suitable for N-type crystal silicon battery
Industrialized production.Filament is combined together with silicon chip matrix or localized metallic electrode by somebody by conductive bond body,
To substitute traditional thin grid line, but these method for making its electrode do not obtain in the electrode of N-type crystal silicon double-sided solar battery
Application.
Content of the invention
It is an object of the invention to provide a kind of N-type crystalline silicon double-sided solar battery structure and preparation method thereof, using thin metal
The localized metallic electrode in front and the back side is coupled together the positive and negative electrode forming battery by wire.The structure of battery makes metal and silicon substrate
The contact area of body reduces, and recombination loss reduces, and significantly reduces the light shielded area of grid line, and then improves the conversion effect of battery
Rate, reduces production cost by reducing silver paste consumption simultaneously.
For reaching above-mentioned purpose, the present invention employs the following technical solutions：
A kind of N-type crystalline silicon double-sided solar battery structure is it is characterised in that include successively from top to down：Front metal wire,
Front localized contact metal electrode, front surface antireflection film, front passivating film, p-type doped layer, N-type crystal silicon matrix, N+ area, the back of the body
Face passivating film, back side local connect metal electrode and back metal wire；
Front metal wire is connected formation Hanging sectionally structure by front side conductive bond material and makees with front localized contact metal electrode
For the conductive composition body of battery front side electrode, and the front main grid line that is connected with front metal wire by setting or positive electrode lead general
The electric current that front is collected is derived；
Back metal wire is connected formation Hanging sectionally structure by back side conductive bonding material and makees with rear side local contact metal electrode
For the conductive composition body of cell backside electrode, and the back side main gate line that is connected with back metal wire by setting or negative electrode lead general
The electric current that the back side is collected is derived.
As a further improvement on the present invention, localized contact metal electrode in front is arranged in N-type crystalline silicon piece front with regular pattern
Antireflective coating on, front localized contact metal electrode penetrates the antireflective coating in N-type crystalline silicon piece front and passivating film is mixed with p-type
Diamicton forms Ohmic contact,
Rear side local contact metal electrode is arranged on the passivating film at the N-type crystalline silicon piece back side with regular pattern, rear side local contact
Metal electrode penetrates the passivating film at the N-type crystalline silicon piece back side and N+ area forms Ohmic contact.
As a further improvement on the present invention, regular pattern is one-dimensional, two-dimentional geometric figure or one-dimensional combining with two-dimentional geometric figure；
One-dimensional geometric figure is selected from：Straight line, line segment, phantom line segments, camber line or grid line shape；Two-dimentional geometric figure is selected from：Circular, oval,
Rectangle, spindle, annular, polygon, polygon or sector.
As a further improvement on the present invention, described one-dimensional geometric live width is 30～200um, and length is 0.05～160mm；
It is 0.25～2.5mm with linear spacing two neighboring in a line, in same row, two neighboring linear spacing is 0.5～3mm；
The size of described two-dimentional geometric figure is 30～200um, and the spacing with figure two neighboring in a line is 0.5～2mm, with
In string, the spacing of two neighboring figure is 0.5～3mm.
As a further improvement on the present invention, described front metal wire and back metal wire are copper cash, silver wire, silver-plated copper
Line, nickel plated copper wire, tinned wird or alloy wire, a diameter of 20～100um；Described front side conductive bond material and the back side are conductive
Bond material is tin cream, Sn-containing alloy, conducting resinl or conductive film.
As a further improvement on the present invention, front passivating film is aluminum oxide film, silicon oxide film, silicon nitride film, nitrogen oxidation
One or more of silicon thin film, thin film of titanium oxide, carborundum films, amorphous silicon membrane lamination is constituted, the entirety of front passivating film
Thickness is 1～50nm；
Front surface antireflection film is silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, in carborundum films
One or more lamination is constituted, and antireflective coating integral thickness is 50～100nm；
Backside passivation film is silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, thin film of titanium oxide, carbonization
One or more of silicon thin film lamination is constituted, and backside passivation film integral thickness is 20～150nm.
As a further improvement on the present invention, N-type double-side cell surface using fall into light texture, sunken light texture be pyramid, fall gold
Word tower, Nano/micron loose structure；N-type crystalline silicon piece be n type single crystal silicon piece or N-type polycrystalline silicon piece, its thickness be 100～
200um.
As a further improvement on the present invention, the p-type doped layer contacting with front localized contact metal electrode is Uniform Doped layer or choosing
Selecting property doped layer, the sheet resistance of Uniform Doped layer is 50～100 Ω/；In selective doping layer, shallow mix region sheet resistance be 50～
150 Ω/, heavily doped area sheet resistance is 10～50 Ω/；Front localized contact metal electrode is distributed within the figure of heavily doped area distribution；
The N+ area contacting with rear side local contact metal electrode is Uniform Doped floor or selective doping floor, the sheet resistance of Uniform Doped layer
For 20～100 Ω/；In selective doping layer, shallow region sheet resistance of mixing is 50～150 Ω/, and heavily doped area sheet resistance is 10～50 Ω/,
Within the rear side local contact metal electrode distribution figure of heavily doped region distribution overleaf.
As a further improvement on the present invention, when arranging front main grid line and during the main gate line of the back side, front main grid line and back side main gate line
Arrange with front metal wire and back metal wire crossbar respectively, all of front metal wire is all by front side conductive bond material
It is connected formation Hanging sectionally structure with front main grid line；All of back metal wire is all by back side conductive bonding material and back side master
Grid line connects formation Hanging sectionally structure；
When arranging positive electrode lead and during negative electrode lead, positive electrode lead and negative electrode lead connect respectively all front metal wires,
All back metal wires, and positive electrode lead and negative electrode lead positioned opposite.
A kind of preparation method of N-type crystalline silicon double-sided solar battery structure, comprises the steps：
(1) N-type crystalline silicon piece is carried out surface-texturing process；
(2) low pressure diffusion, normal pressure diffusion, ion implanting, laser doping or impurity slurry are adopted in the front of N-type crystalline silicon piece
The collaborative heat-treating methods of coating form p-type doped layer, and p-type doped layer is uniformity doping or selective doping；
(3) normal pressure diffusion, low pressure diffusion, ion implanting, the collaborative heat treatment of coating phosphorus slurry are adopted at the back side of N-type crystalline silicon piece
Or the collaborative heat-treating methods of doped dielectric film form N+ area；
(4) Chemical cleaning is carried out to the silicon chip after doping treatment；
(5) it is sequentially depositing front passivating film and front surface antireflection film in p-type doping layer surface；Passivating back is deposited on N+ area
Film；
(6) silk screen printing, ink-jet, 3D printing, laser transfer, chemical attack is adopted to work in coordination with gas phase and sink in front surface antireflection film
Long-pending, photoinduction plating or electric plating method make the front localized contact metal electrode of array distribution；
(7) overleaf on passivating film adopt silk screen printing, ink-jet, 3D printing, laser transfer, chemical attack work in coordination with vapour deposition,
Photoinduction plating or the rear side local contact metal electrode of electric plating method making array distribution；
(8) carry out drying and processing；
(9) carry out heat treatment, front localized contact metal electrode penetrates front surface antireflection film and front passivating film and p-type doped layer
Form good Ohmic contact；Rear side local contact metal electrode penetrates backside passivation film and forms Ohmic contact with N+ area；
(10) conductive bonding material is made on front localized contact metal electrode and rear side local contact metal electrode；
(11) by front metal wire and back metal wire respectively along front and back localized contact metal electrode line direction drawing simultaneously
It is close on conductive bonding material；
(12) carry out heat treatment, so that the plain conductor of front and back is combined with localized contact metal electrode by conductive bonding material
Together, form the positive and negative electrode of N-type crystalline silicon double-sided solar battery.
The N-type crystalline silicon double-sided solar battery structural advantages of the present invention are：Firstth, front, backplate adopt Hanging sectionally
Thin grid line, the thin grid line of Hanging sectionally is connected and composed with localized metallic electrode by conductive bonding material by thin plain conductor, and thin metal is led
Line especially fine copper wire, instead of the partly silver in front and backplate, reduces N-type crystal silicon double-side cell silver electrode and use
Amount, thus reduce the manufacturing cost of N-type crystal silicon double-side cell；The thin plain conductor at the secondth, battery front side and the back side has more
High grid line depth-width ratio, and be Hanging sectionally structure, this can make metal and the contact area of silicon substrate reduce, and recombination loss reduces,
Due to the multiple reflections of light, the silicon face in hanging region as sensitive surface, can also significantly reduce the light shielded area of grid line,
And then improve the conversion efficiency of battery；3rd, the battery production method described in this patent is simple, reliable, is suitable to industrialized production.
The preparation method of the present invention, the mode that the structure according to battery is carried out from inside to outside is carried out, and this part can adopt various ways
Make, process is simple, workable.N-type double-side cell method for making its electrode of the present invention is simple, reliable, is suitable to
Industrialized production.
Brief description
Fig. 1 be front, the back side be selective doping N-type double-side cell along thin grid line (plain conductor) direction part section
Schematic diagram.
Fig. 2 be front Uniform Doped, back side selective doping N-type double-side cell along main gate line direction partial cutaway schematic.
Fig. 3 be front, the back side be Uniform Doped N-type double-side cell along thin grid line direction partial cutaway schematic.
Fig. 4 be front selective doping, back side Uniform Doped N-type double-side cell along main gate line direction partial cutaway schematic.
Fig. 5 is the partial schematic plan view one having main grid front or backplate.
Fig. 6 is the partial schematic plan view two of no main grid front or backplate.
In figure, 1 is front surface antireflection film, and 2 is front passivating film, and 3 is p-type crystal silicon layer (uniform or selectivity heavy doping), 4
For N-type crystal silicon matrix, 5 is N+ area (uniform or selectivity heavy doping), and 6 is backside passivation film, and 7 is positive electrode lead, 8
For front metal wire, 9 is front main grid line, and conductive bonding material is glued in 10 fronts, and 11 is front localized contact metal electrode,
12 is back metal wire, and 13 is back side main grid, and 14 is back side conductive bonding material, and 15 is rear side local contact metal electrode,
16 is negative electrode lead.
Specific embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Figures 1 to 4, a kind of N-type crystalline silicon of present invention double-sided solar battery structure, battery structure wraps from top to down
Include：Front metal wire 8, front localized contact metal electrode 11, front surface antireflection film 1, front passivating film 2, p-type doping
Floor 3, N-type crystal silicon matrix 4, N+ area 5, backside passivation film 6, rear side local contact metal electrode 15 and back metal wire 12.
Wherein, the front of battery and backplate are made up of it is also possible to completely by the thin grid line of Hanging sectionally main gate line and the thin grid line of Hanging sectionally
Constitute.The thin grid line of Hanging sectionally is made up of localized contact metal electrode and thin plain conductor, localized metallic electrode with one-dimensional pattern, two
Tie up figure or a peacekeeping two-dimensional combination graphic array is distributed in the front and back of N-type cell, and (can be typically to mix with silicon substrate
Miscellaneous or heavy doping) form good Ohmic contact.Thin plain conductor (copper cash, silver wire, silver-coated copper wire, nickel plated copper wire,
Tinned wird or alloy wire) it is combined together with localized contact metal electrode by conductive bonding material, form an alternative battery
The conductive composition body of thin grid line.The electric current that battery front side and the back side collect is derived by main gate line or contact conductor.
Specifically, front electrode is intersected vertically and is constituted by front main grid line 9 and the thin grid line of front Hanging sectionally, or all by front office
Vacantly thin grid line is constituted in portion.Wherein Hanging sectionally thin grid line in front is by the thin plain conductor of front localized contact metal electrode 11 and front
8 compositions, front localized contact metal electrode 11 is distributed in N with one-dimensional pattern, X-Y scheme or a peacekeeping two-dimensional combination graphic array
The front of type battery, front localized contact metal electrode 11 penetrates front surface antireflection film 1 and front passivating film 2 is formed with silicon substrate
Good Ohmic contact；The thin plain conductor in front 8 is combined with front localized metallic electrode 11 by front side conductive bond material 10
Together.
Backplate is intersected vertically and is constituted by back side main gate line 13 and the thin grid line of back side Hanging sectionally, or all by front Hanging sectionally
Thin grid line is constituted.Wherein Hanging sectionally thin grid line in the back side is made up of the thin plain conductor of rear side local contact metal electrode 15 and the back side 12,
Rear side local contact metal electrode 15 is distributed in N-type cell with one-dimensional pattern, X-Y scheme or a peacekeeping two-dimensional combination graphic array
The back side, rear side local contact metal electrode 15 penetrated backside passivation film 6 and contacted with back side N+ area 5；The thin plain conductor in the back side
12 are combined together with back side partial metallic contact electrode 15 by back side conductive bonding material 14.
As it can be seen in figures 5 and 6, N-type crystalline silicon double-sided solar battery front of the present invention, backplate can also be not required to
Want main gate line, be made up of the thin grid line of Hanging sectionally completely, battery front side one end is provided with front electrode and draws section, the cell backside other end
It is provided with backplate and draws section, draw section plain conductor and be used for deriving the electric current collecting.
Conductive bonding material is tin cream, Sn-containing alloy, conducting resinl or conductive film., conductive bonding material and front localized contact gold
The method belonging to electrode connection is that silk screen printing works in coordination with heat treatment, heat treatment, thermocompression bonding, ultrasonic bond, spot welding and stickup are worked in coordination with ink-jet.
The invention provides a kind of N-type crystalline silicon double-sided solar battery structure, its preparation method can be carried out as follows：
(1) N-type crystalline silicon piece is carried out surface-texturing process, silicon chip can be n type single crystal silicon piece, N-type polycrystalline silicon piece,
Texture processes and can adopt the method such as chemical liquid burn into plasma etching, metal catalytic, laser ablation.
It is doped process in the front of N-type silicon chip, impurity source can be BBr3、B2O3、BCl3、BF3、B2H6, boracic mixes
Miscellaneous dose etc., the method for doping can be using low pressure diffusion, normal pressure diffusion, ion implanting, laser doping, the heating of impurity slurry coating
The methods such as process, doped dielectric film heat treated.The p-type doped layer 3 contacting with front localized contact metal electrode 11 is uniform
Doped layer, sheet resistance is 50～100 Ω/；Or be selective doping layer, shallow region sheet resistance of mixing is 50～150 Ω/, heavily doped area sheet resistance
For 10～50 Ω/, front localized contact metal electrode 11 is distributed within the figure of heavily doped area distribution.
It is doped process at the back side of silicon chip, impurity source can be POCl3、PH3, phosphoric acid, P2O5Or other phosphorous slurries etc.,
The method of doping can using normal pressure diffusion, low pressure diffusion, ion implanting, laser doping, the collaborative heat treatment of impurity slurry coating,
Doped dielectric film works in coordination with the methods such as heat treatment.The N+ area 5 contacting with rear side local contact metal electrode 15 is Uniform Doped, sheet resistance
For 20～100 Ω/；Or be selective doping, shallow region sheet resistance of mixing is 50～150 Ω/, and heavily doped area sheet resistance is 10～50 Ω/,
Rear side local contact metal electrode 15 is distributed within the figure of heavily doped region distribution overleaf.Back side selectivity heavy doping pattern
For one-dimensional, two-dimentional geometric figure or one-dimensional combining with two-dimentional geometric figure；One-dimensional geometric figure is selected from：Straight line, line segment, dotted line
Section or camber line；Two-dimentional geometric figure is selected from：Circle, ellipse, spindle, annular, polygon, polygon or sector.Described
One-dimensional geometric live width is 30～200um, and length is 0.05～160mm；With linear spacing two neighboring in a line it is
0.25～2.5mm, in same row, two neighboring linear spacing is 0.5～3mm.The size of described two-dimentional geometric figure be 30～
200um, with figure two neighboring in a line spacing be 0.5～2mm, in same row the spacing of two neighboring figure be 0.5～
3mm.This operation, according to the doping method adopting, both can overleaf passivating film be carried out before or after depositing.
(2) Chemical cleaning is carried out to the silicon chip after doping treatment.
(3) passivating film 2 of 1～50nm and the antireflective coating 1 of 50～100nm are deposited in the front of N-type silicon chip；Overleaf sink
The passivating film 6 (or doping passivating film) of long-pending 20～150nm.Front passivating film 2 is aluminum oxide film, silicon oxide film, nitridation
One or more of silicon thin film, silicon oxynitride film, thin film of titanium oxide, carborundum films, amorphous silicon membrane lamination is constituted；Just
Face antireflective coating 1 is one of silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, carborundum films
Or multiple lamination is constituted；The passivating film 6 at the back side be silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film,
One or more of thin film of titanium oxide, carborundum films lamination is constituted.
(4) by specific figure, the array distribution localized contact metal with silicon substrate directly contact is made on the front of N-type silicon chip
Electrode 11, front localized contact metal electrode 11 can be silver electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or gold
Belong to combination electrode, manufacture method can adopt silk screen printing, steel plate printing, ink-jet, 3D printing, laser transfer etc., or permissible
The methods such as vapour deposition, photoinduction plating, plating are worked in coordination with using laser or chemical attack.The distribution patterns of localized metallic be one-dimensional, two
Dimension geometric figure or one-dimensional combining with two-dimentional geometric figure；One-dimensional geometric figure is selected from：Line segment, phantom line segments or camber line；Two dimension is several
What figure is selected from：Circle, ellipse, spindle, annular, polygon, polygon or sector.Described one-dimensional geometric line
A width of 30～200um, length is 0.05～160mm；It is 0.25～2.5mm with linear spacing two neighboring in a line, same
In row, two neighboring linear spacing is 0.5～3mm.The size of described two-dimentional geometric figure is 30～200um, with phase in a line
The spacing of adjacent two figures is 0.5～2mm, and in same row, the spacing of two neighboring figure is 0.5～3mm.Front localized metallic
Under silicon substrate can be general doping or heavy doping.
(5) make rear side local contact metal electrode 15 at the back side of silicon chip, rear side local contact metal electrode 15 can be silver
Electrode, aluminium electrode, nickel electrode, copper electrode, alloy electrode or metal composite electrode, manufacture method can adopt silk screen printing, steel
Plate printing, ink-jet, 3D printing, laser transfer etc..
(6) dried at 200～300 DEG C.
(7) carry out heat treatment at 300～900 DEG C, so that front and the localized metallic electrode of back side array distribution is formed with silicon substrate
Good Ohmic contact.
(8) conductive bonding material 10 and conductive bonding material 14 are made on the localized metallic electrode with the back side for the N-type silicon chip front,
The method making can be using printing, ink-jet, thermocompression bonding, ultrasonic bond, spot welding or stickup etc..
(9) thin plain conductor along the line direction drawing of front and back localized metallic electrode and is close on conductive bonding material,
The material of thin plain conductor is copper cash, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or alloy wire etc., thin plain conductor
A diameter of 20～100um.
(10) plain conductor making thin front and back at 100～400 DEG C is combined with localized metallic electrode by conductive bonding material
Together, being formed can be used as the conductive composition body in N-type crystal silicon battery front and backplate.
Embodiment 1：
(1) by the incorgruous corrosion in 80 DEG C about of KOH solution of n type single crystal silicon piece, obtain surface pyramid structure.
(2) in front side of silicon wafer, with BBr3As impurity, diffuse to form the uniform diffusion layer of 40 Ω/ in 950 DEG C about low pressure.
(3) in silicon chip back side, with POCl3As impurity, diffuse to form the uniform diffusion layer of 40 Ω/ in 800 DEG C about low pressure.
(4) press special pattern and mask is sprayed on the front of silicon chip with the back side.Front is equally spaced for four with the figure of backside mask
The combining of main grid and array-like line segment, the width of wherein single line segment is 40um, and length is 0.5mm, with a line adjacent two
The spacing of individual line segment is 0.5mm, and in same row, the spacing of two neighboring line segment is 1.5mm.The width of main grid is 1.2mm, long
Spend for 156mm.
(5) remove the Pyrex in front and the phosphorosilicate glass at the back side using wet etching.At front and the back side of silicon chip, cover
The region of film forms the low square resistance of about 50 Ω/, forms the high square resistance of about 90 Ω/ in the region not having mask.
(6) front first deposit 5nm about aluminium oxide, afterwards deposition 60nm about silicon oxide；Overleaf deposit 80nm
The silicon oxide of left and right.
(7) method adopting silk screen printing in front presses the localized metallic electrode of front heavy doping graphic making array distribution, this mistake
Journey forms 4 silver-colored primary gate electrode being equally spaced simultaneously.
(8) dried at 200～300 DEG C.
(9) the localized metallic electrode by back side heavy doping graphic making array distribution for the method for silk screen printing, this mistake are overleaf adopted
Journey forms 4 silver-colored primary gate electrode being equally spaced simultaneously.
(10) dried at 200～300 DEG C.
(11) carry out heat treatment at 300～900 DEG C, make battery front side and the metal paste of back side array distribution penetrate antireflective
Film and passivating film, form good Ohmic contact with the heavily doped region of silicon substrate.
(12) on the localized metallic electrode with the back side for the front, the method using silk screen printing makes tin cream.
(13) fine copper wire along the line direction drawing of front and back side localized metallic electrode and is close on tin cream, fine copper wire straight
Footpath is 40um.
(14) fine copper wire is made to be combined together with localized metallic electrode by tin cream at 300 DEG C, formation can be used as N-type crystal silicon electricity
Pond front and the conductive composition body of backplate.
Embodiment 2：
(1) n type single crystal silicon piece incorgruous corrosion in 80 DEG C about of KOH solution, obtains surface pyramid structure.
(2) in the front of silicon chip coating boron slurry.
(3) the boron slurry of front side of silicon wafer is dried.
(4) special pattern printing phosphorus slurry is pressed at the back side in silicon chip, and printed pattern is the line segment of array distribution, the width of single line segment
For 50um, length is 3mm, and the spacing with line segment two neighboring in a line is 2mm, in same row between two neighboring line segment
Away from for 3mm.
(5) the phosphorus slurry of silicon chip back side regional area is dried.
(6) carry out heat treatment under 950 DEG C about, make the boron atom of front side of silicon wafer bulk diffusion to silicon substrate with the phosphorus atoms at the back side,
Thus form the uniform p type diffused layer of 100 Ω/ in front side of silicon wafer, form 40 Ω/ local N+ type diffusion layer in silicon chip back side.
(7) Pyrex of front side of silicon wafer and the phosphorosilicate glass at the back side is removed using wet etching.
(8) front first deposit 5nm about aluminium oxide, afterwards deposition 70nm about silicon nitride；Overleaf deposit 50nm
The silicon nitride of left and right.
(9) method adopting ink-jet in front presses the localized metallic electrode that special pattern makes array distribution, and printed pattern adopts line
Section shape array, width is 50um, and length is 3mm, and the spacing with line segment two neighboring in a line is 2mm, phase in same row
The spacing of adjacent two line segments is 3mm.
(10) dried at 200～300 DEG C.
(11) overleaf adopt the localized metallic electrode by the heavy doping graphic making array distribution at the back side for the method for ink-jet.
(12) dried at 200～300 DEG C.
(13) carry out heat treatment at 300～900 DEG C, make battery front side and the metal paste of back side array distribution penetrate antireflective
Film and passivating film, form good Ohmic contact with silicon substrate.
(14) on the localized metallic electrode with the back side for the front, the method using printing makes tin cream.
(15) thin silver wire along the line direction drawing of front and back side localized metallic electrode and is close on tin cream, thin silver wire straight
Footpath is 50um.The side of the thin silver wire in front is flushed with silicon chip edge, and opposite side grows about 3mm than silicon chip edge, using as battery
Front-side current collects the lead of derivation.The side of the thin silver wire in the back side is flushed with silicon chip edge, and opposite side grows about 3mm than silicon chip edge,
To collect the lead of derivation as cell backside electric current.Front is positioned opposite with the lead at the back side.
(16) thin silver wire is made to be combined together with localized metallic electrode by tin cream at 400 DEG C, formation can be used as N-type crystal silicon electricity
Pond front and the conductive composition body of backplate.
Embodiment 3：
(1) n type single crystal silicon piece incorgruous corrosion in 80 DEG C about of NaOH solution, obtains surface pyramid structure.
(2) method adopting ion implanting in the front of N-type silicon chip mixes boron atom, and boron source adopts BF3, form 80 Ω/ 's
Uniformly diffusion layer.
(3) method adopting ion implanting at the back side of N-type silicon chip mixes phosphorus atoms, and boron source adopts PH3, form 70 Ω/ 's
Uniformly diffusion layer.
(4) Chemical cleaning is carried out to the silicon chip after ion implanting.
(5) front first deposit 3nm about aluminium oxide, afterwards deposition 80nm about silicon nitride；Overleaf deposit 80nm
The silicon nitride of left and right.
(6) method adopting silk screen printing in the front of silicon chip presses array distribution figure preparation front localized contact metal electrode, print
Map brushing shape is spotted array, a diameter of 60um of a single point, and the centre-to-centre spacing with point two neighboring in a line is 1mm, in same row
The centre-to-centre spacing of two neighboring line point is 1.5mm.
(7) dried at 200～300 DEG C.
(8) method adopting silk screen printing at the back side of silicon chip presses array distribution figure preparation rear side local contact metal electrode, print
Map brushing shape is spotted array, a diameter of 60um of a single point, and the centre-to-centre spacing with point two neighboring in a line is 1mm, in same row
The centre-to-centre spacing of two neighboring line point is 1.5mm.
(9) dried at 200～300 DEG C.
(10) carry out heat treatment at 300～900 DEG C, make battery front side and the metal paste of back side array distribution penetrate antireflective
Film and passivating film, form good Ohmic contact with silicon substrate.
(11) on the localized metallic electrode with the back side for the front, the method using silk screen printing makes tin cream.
(12) thin silver wire along the line direction drawing of front and back side localized metallic electrode and is close on tin cream, thin silver wire straight
Footpath is 40um.The side of the thin silver wire in front is flushed with silicon chip edge, and opposite side grows about 3mm than silicon chip edge, using as battery
Front-side current collects the lead of derivation.The side of the thin silver wire in the back side is flushed with silicon chip edge, and opposite side grows about 3mm than silicon chip edge,
To collect the lead of derivation as cell backside electric current.Front is positioned opposite with the lead at the back side.
(13) thin silver wire is made to be combined together with localized metallic electrode by tin cream at 300 DEG C, formation can be used as N-type crystal silicon electricity
Pond front and the conductive composition body of backplate.
The foregoing is only one embodiment of the present invention, be not all of or unique embodiment, those of ordinary skill in the art
Any equivalent conversion technical solution of the present invention taken by reading description of the invention, is the claim institute of the present invention
Cover.
Claims (10)
1. a kind of N-type crystalline silicon double-sided solar battery structure is it is characterised in that include successively from top to down：Front metal is led
Line (8), front localized contact metal electrode (11), front surface antireflection film (1), front passivating film (2), p-type doped layer (3),
N-type crystal silicon matrix (4), N+ area (5), backside passivation film (6), back side local connects metal electrode (15) and back metal is led
Line (12)；
Front metal wire (8) is connected shape by front side conductive bond material (10) with front localized contact metal electrode (11)
Become Hanging sectionally structure as the conductive composition body of battery front side electrode, and be just connected with front metal wire (8) by setting
The electric current that front is collected is derived by face main gate line (9) or positive electrode lead (7)；
Back metal wire (12) is connected shape by back side conductive bonding material (14) with rear side local contact metal electrode (15)
Become Hanging sectionally structure as the conductive composition body of cell backside electrode, and the back of the body being connected with back metal wire (12) by setting
The electric current that the back side is collected is derived by face main gate line (13) or negative electrode lead (16).
2. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1 it is characterised in that front local
Contacting metal electrode (11) is arranged on the antireflective coating (1) in N-type crystalline silicon piece front with regular pattern, front localized contact
Metal electrode (11) penetrates antireflective coating (1) and passivating film (2) and p-type doped layer (3) shape in N-type crystalline silicon piece front
Become Ohmic contact；
Rear side local contact metal electrode (15) is arranged on the passivating film (6) at the N-type crystalline silicon piece back side with regular pattern, the back of the body
Face localized contact metal electrode (15) penetrates the passivating film (6) at the N-type crystalline silicon piece back side and N+ area (5) forms Ohmic contact.
3. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 2 is it is characterised in that regular pattern
For one-dimensional, two-dimentional geometric figure or one-dimensional combining with two-dimentional geometric figure；One-dimensional geometric figure is selected from：Straight line, line segment, dotted line
Section, camber line or grid line shape；Two-dimentional geometric figure is selected from：Circle, ellipse, rectangle, spindle, annular, polygon, polygonal
Shape or sector.
4. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 3 is it is characterised in that described one-dimensional
Geometric live width is 30～200um, and length is 0.05～160mm；With linear spacing two neighboring in a line be 0.25～
2.5mm, in same row, two neighboring linear spacing is 0.5～3mm；
The size of described two-dimentional geometric figure is 30～200um, and the spacing with figure two neighboring in a line is 0.5～2mm, with
In string, the spacing of two neighboring figure is 0.5～3mm.
5. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1 it is characterised in that described just
Face plain conductor (8) and back metal wire (12) be copper cash, silver wire, silver-coated copper wire, nickel plated copper wire, tinned wird or
Alloy wire, a diameter of 20～100um；Described front side conductive bond material (10) and back side conductive bonding material (14) are
Tin cream, Sn-containing alloy, conducting resinl or conductive film.
6. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1 is it is characterised in that front is passivated
Film (2) be aluminum oxide film, silicon oxide film, silicon nitride film, silicon oxynitride film, thin film of titanium oxide, carborundum films,
One or more of amorphous silicon membrane lamination is constituted, and the integral thickness of front passivating film (2) is 1～50nm；
Front surface antireflection film (1) is silicon nitride film, silicon oxide film, silicon oxynitride film, thin film of titanium oxide, carborundum are thin
One or more of film lamination is constituted, and antireflective coating integral thickness is 50～100nm；
Backside passivation film (6) be silicon nitride film, silicon oxide film, amorphous silicon membrane, silicon oxynitride film, thin film of titanium oxide,
One or more of carborundum films lamination is constituted, and backside passivation film (6) integral thickness is 20～150nm.
7. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1 is it is characterised in that N-type is two-sided
Using falling into light texture, sunken light texture is pyramid, inverted pyramid, Nano/micron loose structure on the surface of battery；N-type crystalline silicon
Piece is n type single crystal silicon piece or N-type polycrystalline silicon piece, and its thickness is 100～200um.
8. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1 it is characterised in that with front office
The p-type doped layer (3) that portion's contacting metal electrode (11) contacts is Uniform Doped layer or selective doping layer, Uniform Doped layer
Sheet resistance is 50～100 Ω/；In selective doping layer, shallow mix region sheet resistance be 50～150 Ω/, heavily doped area sheet resistance be 10～
50Ω/□；Front localized contact metal electrode (11) is distributed within the figure of heavily doped area distribution；
The N+ area (5) contacting with rear side local contact metal electrode (15) is Uniform Doped floor or selective doping floor, uniformly mixes
The sheet resistance of diamicton is 20～100 Ω/；In selective doping layer, shallow region sheet resistance of mixing is 50～150 Ω/, and heavily doped area sheet resistance is
10～50 Ω/, within rear side local contact metal electrode (15) the distribution figure of heavily doped region distribution overleaf.
9. a kind of N-type crystalline silicon double-sided solar battery structure according to claim 1 is it is characterised in that just work as setting
When face main gate line (9) and back side main gate line (13), front main grid line (9) and back side main gate line (13) respectively with front metal
Wire (8) and back metal wire (12) are crisscross arranged, and all of front metal wire (8) all combines material by front side conductive
Material (10) is connected formation Hanging sectionally structure with front main grid line (9)；All of back metal wire (12) is all by the back side
Conductive bonding material (14) is connected formation Hanging sectionally structure with back side main gate line (13)；
When arranging positive electrode lead (7) and negative electrode lead (16), positive electrode lead (7) and negative electrode lead (16) are divided
Do not connect all front metal wires (8), all back metal wires (12), and positive electrode lead (7) and negative electrode lead (16)
Positioned opposite.
10. a kind of preparation method of N-type crystalline silicon double-sided solar battery structure is it is characterised in that comprise the steps：
(1) N-type crystalline silicon piece is carried out surface-texturing process；
(2) low pressure diffusion, normal pressure diffusion, ion implanting, laser doping or impurity slurry are adopted in the front of N-type crystalline silicon piece
The collaborative heat-treating methods of coating form p-type doped layer (3), and p-type doped layer (3) is uniformity doping or selective doping；
(3) normal pressure diffusion, low pressure diffusion, ion implanting, the collaborative heat treatment of coating phosphorus slurry are adopted at the back side of N-type crystalline silicon piece
Or the collaborative heat-treating methods of doped dielectric film form N+ area (5)；
(4) Chemical cleaning is carried out to the silicon chip after doping treatment；
(5) it is sequentially depositing front passivating film (2) and front surface antireflection film (1) in p-type doping layer surface (3)；In N+
Area (5) is upper to deposit backside passivation film (6)；
(6) upper collaborative using silk screen printing, ink-jet, 3D printing, laser transfer, chemical attack in front surface antireflection film (1)
Vapour deposition, photoinduction plating or electric plating method make front localized contact metal electrode (11) of array distribution；
(7) overleaf passivating film (6) is upper adopts silk screen printing, ink-jet, 3D printing, laser transfer, chemical attack to work in coordination with gas
Mutually deposition, photoinduction plating or electric plating method make the rear side local contact metal electrode (15) of array distribution；
(8) carry out drying and processing；
(9) carry out heat treatment, front localized contact metal electrode (11) penetrates front surface antireflection film (1) and front passivating film (2)
Form good Ohmic contact with p-type doped layer (3)；Rear side local contact metal electrode (15) penetrates backside passivation film (6)
Form Ohmic contact with N+ area (5)；
(10) in front localized contact metal electrode (11) and rear side local contact metal electrode (15), the upper conduction that makes combines material
Material；
(11) by front metal wire (8) and back metal wire (12) respectively along front and back localized contact metal electrode
Line direction drawing is simultaneously close on conductive bonding material；
(12) carry out heat treatment, so that the plain conductor of front and back is combined with localized contact metal electrode by conductive bonding material
Together, form the positive and negative electrode of N-type crystalline silicon double-sided solar battery.
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| CN112687755A (en) * | 2020-12-28 | 2021-04-20 | 浙江正泰太阳能科技有限公司 | Back metal electrode of N-type TopCOn solar cell, preparation method and cell |
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