CN106940309B - 具有薄层层析的拉曼检测芯片及分离检测分析物的方法 - Google Patents
具有薄层层析的拉曼检测芯片及分离检测分析物的方法 Download PDFInfo
- Publication number
- CN106940309B CN106940309B CN201611186111.1A CN201611186111A CN106940309B CN 106940309 B CN106940309 B CN 106940309B CN 201611186111 A CN201611186111 A CN 201611186111A CN 106940309 B CN106940309 B CN 106940309B
- Authority
- CN
- China
- Prior art keywords
- nanowire
- detection chip
- layer chromatography
- raman detection
- thin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 72
- 238000001514 detection method Methods 0.000 title claims abstract description 64
- 238000004809 thin layer chromatography Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000012491 analyte Substances 0.000 title abstract description 12
- 239000002070 nanowire Substances 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 7
- 238000012986 modification Methods 0.000 claims description 7
- 230000004048 modification Effects 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 239000002923 metal particle Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 229920000877 Melamine resin Polymers 0.000 description 14
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 14
- 238000000926 separation method Methods 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 101710134784 Agnoprotein Proteins 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 229910001961 silver nitrate Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 239000008267 milk Substances 0.000 description 4
- 210000004080 milk Anatomy 0.000 description 4
- 235000013336 milk Nutrition 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000005526 G1 to G0 transition Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004587 chromatography analysis Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- HCITUYXHCZGFEO-UHFFFAOYSA-N 1,3,5-triazine-2,4,6-triamine Chemical group NC1=NC(N)=NC(N)=N1.N=C1NC(=N)NC(=N)N1 HCITUYXHCZGFEO-UHFFFAOYSA-N 0.000 description 1
- -1 EA) Chemical compound 0.000 description 1
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- JQOAQUXIUNVRQW-UHFFFAOYSA-N hexane Chemical compound CCCCCC.CCCCCC JQOAQUXIUNVRQW-UHFFFAOYSA-N 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/44—Raman spectrometry; Scattering spectrometry ; Fluorescence spectrometry
- G01J3/4412—Scattering spectrometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means
- G01N15/0211—Investigating a scatter or diffraction pattern
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/90—Plate chromatography, e.g. thin layer or paper chromatography
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/90—Plate chromatography, e.g. thin layer or paper chromatography
- G01N30/92—Construction of the plate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/90—Plate chromatography, e.g. thin layer or paper chromatography
- G01N30/95—Detectors specially adapted therefor; Signal analysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Dispersion Chemistry (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
本发明公开一种具有薄层层析的拉曼检测芯片及分离检测分析物的方法。该具有薄层层析的拉曼检测芯片包含一硅基底,包含一平坦部及配置于该平坦部之上的多个纳米线,其中每一纳米线具有一顶端表面及一侧壁;以及,一金属层覆盖该纳米线的顶端表面及至少部分侧壁,其中该纳米线的总长度L为5μm至15μm。
Description
技术领域
本发明涉及一种具有薄层层析的拉曼检测芯片及分离检测分析物的方法。
背景技术
拉曼光谱(raman spectroscopy)由于具有指纹专一性(fingerprint)及多领域(multi-domain)应用的特性,近年来已被广泛应用在生物感测、医学制药、环境监控、鉴识科学、健康监控等领域。然而,利用拉曼光谱进行定性鉴别与定量分析时,由于拉曼信号散射强度微弱,且容易受到大量的复杂样品干扰,因而降低了检测灵敏度。
因此,开发出的检测技术,以分离干扰信号并增强拉曼光谱信号,以解决现有技术所遭遇到的问题。
发明内容
为解决上述问题,根据本发明实施例,本发明提供一种具有薄层层析的拉曼检测芯片。该具有薄层层析的拉曼检测芯片包含一硅基底以及一金属层。该硅基底包含一平坦部及配置于该平坦部之上的多个纳米线,其中每一纳米线具有一顶端表面及一侧壁。该金属层覆盖该纳米线的顶端表面及至少部分侧壁,其中该纳米线的总长度L为5μm至15μm。
根据本发明其他实施例,本发明提供一种分离检测分析物的方法,包含:提供上述具有薄层层析的拉曼检测芯片;提供一样品,其中该样品包含一溶剂及至少一种化合物;将该样品点附于该具有薄层层析的拉曼检测芯片上;通过一薄层层析法(thin layerchromatography)分离该样品,得到至少一个分析点;以及对该分析点进行一拉曼光谱测量。
附图说明
图1是本发明实施例所述具有薄层层析的拉曼检测芯片的示意图;
图2是图1所示具有薄层层析的拉曼检测芯片沿切线2-2’的剖面结构示意图;
图3-图5是本发明其他实施例所述具有薄层层析的拉曼检测芯片的剖面结构示意图;
图6A至图6D是一系列示意图,用以说明本发明实施例所述硅基底的制造流程;
图7A至图7B是利用本发明实施例所述具有薄层层析的拉曼检测芯片进行薄层层析法(thin layer chromatography)的示意图;
图8是实施例4所述的拉曼检测芯片4其剖面结构的扫描式电子显微镜(scanningelectron microscope,SEM)图谱;
图9是本发明实施例1至6所述拉曼检测芯片1至6其纳米线长度与Rf值的关系图;以及
图10为实施例9所述以拉曼检测芯片4对牛奶进行分离检测所得的混掺物三聚氰胺的拉曼光谱。
符号说明
2-2’ 切线;
10 硅基底;
20 平坦部;
22 纳米线;
23 顶端表面;
25 侧壁;
30 金属层;
40 修饰层;
50 单晶硅芯片;
52 银纳米图案;
100 具有薄层层析的拉曼检测芯片;
101 样品;
102 分析点;
A、B、C 区域;
D、D1、D2 距离;
L、L1、L2 长度;
M 直径;
T 厚度。
具体实施方式
以下针对本发明的显示装置作详细说明。应了解的是,以下的叙述提供许多不同的实施例或例子,用以实施本发明的不同样态。以下所述特定的元件及排列方式仅为简单描述本发明。当然,这些仅用以举例而非本发明的限定。此外,在不同实施例中可能使用重复的标号或标示。这些重复仅为了简单清楚地叙述本发明,不代表所讨论的不同实施例及/或结构之间具有任何关连性。且在附图中,实施例的形状、数量、或是厚度可扩大,并以简化或是方便标示。再者,附图中各元件的部分将以分别描述说明之,值得注意的是,图中未绘示或描述的元件,为所属技术领域中具有通常知识者所知的形式,此外,特定的实施例仅为揭示本发明使用的特定方式,其并非用以限定本发明。
本发明提供一种具有薄层层析分离功能的拉曼检测芯片及分离检测分析物的方法。根据本发明实施例,该具有薄层层析的拉曼检测芯片可通过具有特定长度硅纳米线的硅基底,达到快速分离混合物及去除背景基质干扰的效果。此外,通过覆盖该硅纳米线部分表面的金属层,达到拉曼信号放大的效果。如此一来,可同时实现薄层层析与表面增强拉曼散射作用,有效降低背景值的干扰并提升鉴别率。
请参照图1,为本发明一实施例所述薄层层析的拉曼检测芯片100的示意图,该具有薄层层析的拉曼检测芯片100包含一硅基底10,其中该硅基底10由一平坦部20及形成于该平坦部20之上的多个纳米线22所构成。每一纳米线22具有一顶端表面23及一侧壁25,而一金属层30形成于该纳米线22之上,并覆盖该顶端表面23及至少部分侧壁25。该金属层可由多个金属颗粒所构成。根据本发明实施例,该金属颗粒的材料可为银(Ag)、金(Au)、铝(Al)、铜(Cu)、锡(Sn)、钛(Ti)、钡(Ba)、铂(Pt)、钴(Co)、或上述的组合。根据本发明实施例,该硅基底10的平坦部20及多个纳米线22为一体成形。
图2为图1所示薄层层析的拉曼检测芯片100延切线2-2’的剖面结构示意图。请参照图2,该纳米线22可具有一总长度L,其中该总长度L可约为5μm至15μm(具有薄膜层析的效果)。当该纳米线22的总长度过小时,易使得待测物分子与多个的纳米线之间的吸附力不足,造成分离距离过长,增加成本及处理时间;相反的,当该纳米线22的总长度过大时,易使待测物分子与多个的纳米线之间的吸附力太强,导致待测物分子无法有效进行分离。
根据本发明实施例,请参照图2,每一纳米线22的顶端表面23的直径M可约为50nm至200nm。根据本发明实施例,任意两相邻的纳米线相隔的距离D(例如任意两相邻的纳米线侧壁间的最短距离)可约为50nm至200nm,当两纳米柱之间距离约为100-200nm,分布于两纳米线顶端的金属纳米颗粒,有机会形成微小的间距,有利于拉曼增强效应。同时,也可使待测物分子与多个的纳米线之间维持足够的吸附力。此外,根据本发明实施例,该金属层30的厚度T可约为20nm至100nm。当金属层的厚度为20至100nm时,相邻两纳米线顶端的金属层之间会形成为小的缝隙,有利于拉曼增强效应。
此外,根据本发明实施例,请参照图2,该金属层30完全覆盖该纳米线22的顶端表面23,并进一步往该纳米线22的侧壁25延伸,以覆盖该纳米线22的部分侧壁25。如此一来,该纳米线22的部分侧壁25并未被该金属层30所覆盖。根据本发明某些实施例,被该金属层30覆盖的该纳米线22侧壁的长度L1与该纳米线22的总长度L的比值(L1/L)可约为0.2至0.8(例如约为0.3至0.74之间)。当该纳米线22被该金属层30覆盖的区域过小时(即长度L1与长度L的比值(L1/L)过小时),增强效应局限于表层;相反的,当该纳米线22被该金属层30覆盖的区域过大时(即长度L1与长度L的比值(L1/L)过大时),易导致待测物分子与多个的纳米线之间的吸附力不足,造成分离距离过长,增加成本及处理时间。另一方面,请参照图2,未被该金属层30覆盖该纳米线22侧壁的长度L2与该纳米线22的总长度L的比值(L2/L)可约为0.2至0.8(例如约为0.26至0.7之间)。根据本发明实施例,该具有薄层层析的拉曼检测芯片可还包含一修饰层40形成于未被该金属层30所覆盖的该纳米线22侧壁25上,如图3所示。该修饰层40可为增加或降低待测物分子与纳米线之间吸附力的材质,例如在22纳米线的未覆盖金属区域,形成一氧化硅层、氮化硅层、氧化铝层,或对于硅表面的极性(polarity)进行官能化修饰的材料。
根据本发明实施例,该修饰层40除了可形成于未被该金属层30所覆盖的该纳米线22侧壁25之外,也可进一步形成于该硅基底的平坦部20表面上(未被该纳米线22所覆盖的表面),如图4所示。
根据本发明某些实施例,该纳米线22可具有一倾斜的侧壁(slanted sidewall)25,如图5所示。换言之,该纳米线22的侧壁25并非实质垂直于该平坦部20之上。当该纳米线22具有倾斜的侧壁25时,可使纳米线22较易与该硅基底的平坦部20实质上垂直。
根据本发明实施例,该具有薄层层析的拉曼检测芯片可由以下步骤制备而得。首先,先制备该拉曼检测芯片的硅基底如图6A-图6D所示,提供一具有特定尺寸的单晶硅芯片50(举例来说,单晶硅芯片50的长度可为20mm至25mm、宽度可为10mm至15mm、以及厚度可为500μm至1mm),如图6A所示。接着,将该单晶硅芯片50浸泡于一含有硝酸银(AgNO3)以及氢氟酸(HF)的一第一溶液中并维持一第一制作工艺时间(例如:5至10秒),以在该单晶硅芯片50的上表面51生成网络状银纳米图案52,如图6B所示。接着,将该单晶硅芯片50由该含有硝酸银(AgNO3)以及氢氟酸(HF)的溶液中取出,并将该表面具有网络状银纳米图案52的单晶硅芯片50浸泡于一含有氢氟酸(HF)以及过氧化氢(H2O2)的一第二溶液中并维持一第二制作工艺时间(例如:40min),以进行一金属辅助化学蚀刻(metal assisted chemical etching、MACE)制作工艺。在该金属辅助化学蚀刻制作工艺中,该单晶硅芯片50覆盖网络状银纳米图案52之处会被往下蚀刻,如图6C所示。接着,将网络状银纳米图案52移除,形成如图6D所示由一平坦部20及多个纳米线22所构成的硅基底10。此外,该纳米线22的长度L可由该金属辅助化学蚀刻的制作工艺时间加以控制,即该纳米线22的长度L与该第二制作工艺时间成正比。最后,将该硅基底10由第二溶液中取出,并浸泡于一含有硝酸银(AgNO3)的第三溶液中并维持一第三制作工艺时间(例如:30-240秒),以使该纳米线22顶端表面23进一步覆盖金属层30(银层)并且往该纳米线22的侧壁25延伸,以覆盖该纳米线22的部分侧壁25,得到如图1所示的具有薄层层析的拉曼检测芯片100。在此,被该金属层30所覆盖的纳米线22的长度L1可由第三制作工艺时间加以控制,即被该金属层30所覆盖的纳米线22的长度L1与该第三制作工艺时间成正比。
根据本发明实施例,本发明也提供一种以上述具有薄层层析的拉曼检测芯片进行分离检测分析物的方法。该方法包含提供上述具有薄层层析的拉曼检测芯片及提供一样品,其中该样品包含一溶剂及至少一种化合物。其中,该溶剂可为任何可以溶解该至少一种化合物的溶剂。接着,将该样品101点附于该具有薄层层析的拉曼检测芯片100上,请参照图7A。接着,通过一薄层层析法(thin layer chromatography)分离该样品,因此可在该薄层层析的拉曼检测芯片100得到至少一个分析点102,请参照图7B。其中,距离D1为该样品于该拉曼检测芯片100的最大可展开距离、距离D2为分析点102与样品101之间的距离(即展开距离)、而滞留因子(retention factor、Rf)则定义为D2/D1。在该薄层层析法中使用该拉曼检测芯片作为层析静止相(stationary phase),以液体展开剂作为流动相(mobile phase),其中该展开剂可包含二氯甲烷(dichloromethane、DCM)、甲醇(methanol)、***(ethylether)、乙酸乙酯(ethyl acetate、EA)、正己烷(n-hexane)、丙酮(acetone)、氯仿(chloroform)、甲苯(toluene)、水、或上述的组合。然而,展开剂并不限于上述提及的溶剂,本领域人士可依据实际应用的需求,选择所需的展开剂。最后,对该分析点102进行一拉曼光谱测量。
为了让本发明的上述和其他目的、特征、和优点能更明显易懂,下文特举数实施例及比较实施例,作详细说明如下:
拉曼检测芯片的制备
实施例1:
首先,提供一单晶硅芯片(15mm x 25mm)。接着,将该单晶硅芯片浸泡于一含有硝酸银(AgNO3)以及氢氟酸(HF)的一溶液中维持一第一制作工艺时间(约10秒)。接着,在将该单晶硅芯片由该含有硝酸银(AgNO3)以及氢氟酸(HF)的溶液中取出后,将单晶硅芯片浸泡于一含有氢氟酸(HF)以及过氧化氢(H2O2)的溶液中并维持一第二制作工艺时间(约4分),以进行一金属辅助化学蚀刻(metal assisted chemical etching、MACE)制作工艺,得到一具有多个纳米线的硅基底,其中该纳米线的平均长度约为1μm。接着,将该硅基底浸泡于一含有硝酸银(AgNO3)的溶液中并维持一第三制作工艺时间(约120秒),以形成银颗粒层于纳米线的侧壁,得到拉曼检测芯片(1),其中被该金属层覆盖的该纳米线的长度L1与该纳米线长度L的比值(L1/L)约为0.74。
实施例2:
如实施例1所述的方式进行,除了将第二制作工艺时间由4分增加至8分,得到拉曼检测芯片(2),其中该纳米线的平均长度约为2μm被该金属层覆盖的该纳米线的长度L1与该纳米线长度L的比值(L1/L)约为0.6。
实施例3:
如实施例1所述的方式进行,除了将第二制作工艺时间由4分增加至20分,得到拉曼检测芯片(3),其中该纳米线的平均长度约为5μm被该金属层覆盖的该纳米线的长度L1与该纳米线长度L的比值(L1/L)约为0.46。
实施例4:
如实施例1所述的方式进行,除了将第二制作工艺时间由4分增加至40分,得到拉曼检测芯片(4),其中该纳米线的平均长度约为10μm被该金属层覆盖的该纳米线的长度L1与该纳米线长度L的比值(L1/L)约为0.4。请参照图8,为拉曼检测芯片(4)剖面的扫描式电子显微镜(scanning electron microscope,SEM)图谱。对图8所标示的区域A、B、及C进行X光能量分散光谱(energy dispersive spectroscopy、EDS)分析,测量其银硅比(Ag/Si),结果如表1所示:
表1
银硅比(Ag/Si) | |
区域A | 0.123 |
区域B | 0.118 |
区域C | 0.0012 |
由表1可知,银颗粒层确实形成于纳米线的上半部,而未进一步形成于纳米线的根部。
实施例5:
如实施例1所述的方式进行,除了将第二制作工艺时间由4分增加至60分,得到拉曼检测芯片(5),其中该纳米线的平均长度约为15μm被该金属层覆盖的该纳米线的长度L1与该纳米线长度L的比值(L1/L)约为0.37。
实施例6:
如实施例1所述的方式进行,除了将第二制作工艺时间由4分增加至80分,得到拉曼检测芯片(6),其中该纳米线的平均长度约为20μm被该金属层覆盖的该纳米线的长度L1与该纳米线长度L的比值(L1/L)约为0.3。
以拉曼检测芯片进行三聚氰胺的分离检测
实施例7:
首先,在牛奶中加入50ppm的三聚氰胺,作为待测样品。接着,将该样品以施涂器(CAMAG Linomat 5)利用气体压力分别点附于拉曼检测芯片(1)至(6)上。接着,将拉曼检测芯片(1)至(6)置于一展开槽中并以甲醇作为展开液。展开完毕后,对拉曼检测芯片(1)至(6)沿着待测物分离方向,每1mm测量一次拉曼光谱,以测量50ppm的三聚氰胺分别于拉曼检测芯片(1)至(6)的Rf值,结果如图9所示。
由图9可知,若拉曼检测芯片的纳米线长度小于5μm(例如1μm、或2μm),则待测物分子与纳米线的吸附力量不足,造成分离距离过长(Rf值过大),增加成本及处理时间。若纳米阵列的长度大于15μm(例如为20μm),则待测分子与纳米线之间的吸附力太强,导致待测分子不易随着挥发溶剂来移动,造成很短的分离距离(Rf值过小),无法有效进行分离。此外,由拉曼光谱测量的结果可知,过长或过短的分离距离,皆会使最终测量到的三聚氰胺的拉曼光谱信号强度下降。
实施例8:
首先,在牛奶中加入30ppm的三聚氰胺,作为待测样品。接着,将该样品以施涂器(CAMAG Linomat 5)利用气体压力分别点附于拉曼检测芯片(4)上,并对该样品进行拉曼光谱测量,结果如图10所示。接着,将拉曼检测芯片(4)置于一展开槽中并以甲醇作为展开液。展开完毕后,对拉曼检测芯片(4)沿着待测物分离方向,每1mm测量一次拉曼光谱,并记录三聚氰胺(melamine)信号最强处,结果如图10所示。由图10可知,与未展开前的样品三聚氰胺特征光谱信号相比,经展开分离后所得的三聚氰胺特征光谱信号可增加至约数十倍,此代表经过分离后可减少三聚氰胺小分子被牛奶中的大分子(例如蛋白质)覆盖或占据芯片感测位置的干扰,因而使三聚氰胺信号增强。
实施例9:
如实施例8所述的方式进行,除了将样品中的三聚氰胺浓度由30ppm降低至5ppm。与未展开前的样品三聚氰胺特征光谱信号相比,经展开分离后所得的三聚氰胺特征光谱信号可增加至5倍左右。由此可知,本发明所述拉曼检测芯片即使具有较低浓度的三聚氰胺时,仍可有效降低背景值的干扰并提升鉴别率。
虽然结合以上数个实施例揭露了本发明,然而其并非用以限定本发明,任何本技术领域中熟悉此技术者,在不脱离本发明的精神和范围内,可作任意的更动与润饰,因此本发明的保护范围应以附上的权利要求所界定的为准。
Claims (9)
1.一种具有薄层层析的拉曼检测芯片,包含:
硅基底,包含一平坦部及配置于该平坦部之上的多个纳米线,其中每一纳米线具有一顶端表面及一侧壁;
金属层,覆盖该纳米线的顶端表面及至少部分侧壁,其中该纳米线的总长度L为5μm至15μm,其中被该金属层覆盖的该纳米线侧壁的长度L1与该纳米线的总长度L的比为0.3至0.74;以及
修饰层,形成于未被该金属层覆盖的该纳米线侧壁上和该硅基底的该平坦部表面上,其中该修饰层为氧化硅、氮化硅、氧化铝,或可调整硅表面的极性(polarity)的官能化修饰材料。
2.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中金属层由多个金属颗粒所构成。
3.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中该金属颗粒的材料是银(Ag)、金(Au)、铝(Al)、铜(Cu)、锡(Sn)、钛(Ti)、钡(Ba)、铂(Pt)、钴(Co)、或上述的组合。
4.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中该纳米线的顶端表面的直径是50nm至200nm。
5.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中任意两相邻的纳米线相隔的距离为50nm至200nm。
6.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中该金属层的厚度为20nm至100nm。
7.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中被该金属层是由该纳米线的顶端往该纳米线的侧壁延伸以覆盖该纳米线的部分侧壁。
8.如权利要求1所述的具有薄层层析的拉曼检测芯片,其中该纳米线的侧壁为一倾斜侧壁(slanted sidewall)。
9.一种分离检测分析物的方法,包含:
提供如权利要求1所述的具有薄层层析的拉曼检测芯片;
提供一样品,其中该样品包含一溶剂及至少一种待测化合物;
将该样品点附于该具有薄层层析的拉曼检测芯片上;
通过一薄层层析法分离该样品,得到至少一个分析点;以及
对该分析点进行一表面增强拉曼光谱测量。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662274938P | 2016-01-05 | 2016-01-05 | |
US62/274,938 | 2016-01-05 | ||
TW105138051A TW201725385A (zh) | 2016-01-05 | 2016-11-21 | 具有薄層層析之拉曼檢測晶片及分離檢測分析物之方法 |
TW105138051 | 2016-11-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106940309A CN106940309A (zh) | 2017-07-11 |
CN106940309B true CN106940309B (zh) | 2020-04-21 |
Family
ID=60047262
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611186111.1A Active CN106940309B (zh) | 2016-01-05 | 2016-12-20 | 具有薄层层析的拉曼检测芯片及分离检测分析物的方法 |
CN201711444998.4A Active CN109813696B (zh) | 2016-01-05 | 2017-12-27 | 具有薄层层析的拉曼检测芯片及分离检测分析物的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711444998.4A Active CN109813696B (zh) | 2016-01-05 | 2017-12-27 | 具有薄层层析的拉曼检测芯片及分离检测分析物的方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US10012625B2 (zh) |
CN (2) | CN106940309B (zh) |
TW (2) | TW201725385A (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201725385A (zh) * | 2016-01-05 | 2017-07-16 | 財團法人工業技術研究院 | 具有薄層層析之拉曼檢測晶片及分離檢測分析物之方法 |
TWI687677B (zh) * | 2019-01-23 | 2020-03-11 | 國立清華大學 | 光學基板及其製備方法 |
CN114324293A (zh) * | 2021-12-29 | 2022-04-12 | 国家纳米科学中心 | 一种表面增强拉曼芯片 |
CN114295599A (zh) * | 2021-12-29 | 2022-04-08 | 国家纳米科学中心 | 一种表面增强拉曼散射芯片及其制备方法与应用 |
CN114280028A (zh) * | 2021-12-29 | 2022-04-05 | 国家纳米科学中心 | 一种介质增强拉曼散射芯片及其制备方法与应用 |
TWI827170B (zh) * | 2022-07-29 | 2023-12-21 | 四方仁禾半導體股份有限公司 | 表面增強型拉曼光譜晶片及其檢測系統 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103620358A (zh) * | 2011-05-20 | 2014-03-05 | 惠普发展公司,有限责任合伙企业 | 表面增强拉曼光谱传感器、传感***和方法 |
CN104422751A (zh) * | 2013-08-22 | 2015-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 生化分离检测一体芯片及其制备方法 |
CN104937391A (zh) * | 2013-01-25 | 2015-09-23 | 惠普发展公司,有限责任合伙企业 | 化学传感装置 |
CN105259158A (zh) * | 2015-11-13 | 2016-01-20 | 暨南大学 | 一种表面增强拉曼散射免疫层析试纸条及制备方法与应用 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180415B1 (en) * | 1997-02-20 | 2001-01-30 | The Regents Of The University Of California | Plasmon resonant particles, methods and apparatus |
US7116416B1 (en) * | 2002-04-26 | 2006-10-03 | The United States Of America As Represented By The Secretary Of The Navy | Thermo-electrically cooled surface enhanced Raman spectroscopy sensor system |
US7400395B2 (en) | 2002-06-12 | 2008-07-15 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced raman spectroscopy (SERS) substrate |
CN1254306C (zh) * | 2002-08-28 | 2006-05-03 | 财团法人工业技术研究院 | 填充磁性金属纳米碳球的制造方法 |
US7297966B2 (en) * | 2004-08-17 | 2007-11-20 | California Institute Of Technology | Utilizing an integrated plasmon detector to measure a metal deposit roughness on a semiconductor surface |
US7158219B2 (en) | 2004-09-16 | 2007-01-02 | Hewlett-Packard Development Company, L.P. | SERS-active structures including nanowires |
US7738096B2 (en) | 2004-10-21 | 2010-06-15 | University Of Georgia Research Foundation, Inc. | Surface enhanced Raman spectroscopy (SERS) systems, substrates, fabrication thereof, and methods of use thereof |
US7880876B2 (en) | 2004-10-21 | 2011-02-01 | University Of Georgia Research Foundation, Inc. | Methods of use for surface enhanced raman spectroscopy (SERS) systems for the detection of bacteria |
GB2419940B (en) * | 2004-11-04 | 2007-03-07 | Mesophotonics Ltd | Metal nano-void photonic crystal for enhanced raman spectroscopy |
US7940387B2 (en) | 2005-03-15 | 2011-05-10 | Univeristy Of Georgia Research Foundation, Inc. | Surface enhanced Raman spectroscopy (SERS) systems for the detection of viruses and methods of use thereof |
JP4939182B2 (ja) * | 2006-11-22 | 2012-05-23 | キヤノン株式会社 | 検知素子、該検知素子を用いた標的物質検知装置及び標的物質を検知する方法 |
US7639354B2 (en) * | 2007-01-31 | 2009-12-29 | Hewlett-Packard Development Company, L.P. | Raman signal-enhancing structures for Raman spectroscopy and methods for performing Raman spectroscopy |
EP2149050A2 (en) * | 2007-04-27 | 2010-02-03 | The Regents Of The University Of California | Device and methods for detection of airborne agents |
CN101281133B (zh) * | 2008-05-12 | 2010-08-18 | 中国科学院合肥物质科学研究院 | 具有大面积微纳树状结构阵列的表面增强拉曼活性基底的制备方法 |
US8953159B2 (en) * | 2008-10-03 | 2015-02-10 | The Board Of Trustees Of The University Of Illinois | Surface enhanced raman spectroscopy nanodome biosensors and methods of manufacturing the same |
US8384892B2 (en) * | 2008-10-03 | 2013-02-26 | Board Of Trustees Of The University Of Illinois | Surface enhanced raman spectroscopy on optical resonator (e.g., photonic crystal) surfaces |
CN102282094A (zh) | 2008-11-17 | 2011-12-14 | 惠普开发有限公司 | 用于表面增强拉曼散射(sers)的衬底 |
US20120081703A1 (en) * | 2009-05-07 | 2012-04-05 | Nant Holdings Ip, Llc | Highly Efficient Plamonic Devices, Molecule Detection Systems, and Methods of Making the Same |
US8107070B2 (en) | 2009-06-11 | 2012-01-31 | University Of Georgia Research Foundation, Inc. | Methods of melamine detection and quantification |
WO2011014176A1 (en) | 2009-07-30 | 2011-02-03 | Hewlett-Packard Development Company, L.P. | Nanowire-based systems for performing raman spectroscopy |
US20110037976A1 (en) | 2009-08-17 | 2011-02-17 | Yiping Zhao | Flexible surface enhanced raman spectroscopy (sers) substrates, methods of making, and methods of use |
US8767202B2 (en) | 2009-10-23 | 2014-07-01 | Danmarks Tekniske Universitet | SERS substrate and a method of providing a SERS substrate |
US9190099B2 (en) * | 2010-03-15 | 2015-11-17 | Purdue Research Foundation | Higher order structured dyes with enhanced optical features |
US8358408B2 (en) | 2010-04-30 | 2013-01-22 | Hewlett-Packard Development Company, L.P. | Apparatus for performing SERS |
US8358407B2 (en) | 2010-04-30 | 2013-01-22 | Hewlett-Packard Development Company, L.P. | Enhancing signals in Surface Enhanced Raman Spectroscopy (SERS) |
US8314932B2 (en) | 2010-04-30 | 2012-11-20 | Hewlett-Packard Development Company, L.P. | Surface-enhanced Raman spectroscopy device and a mold for creating and a method for making the same |
WO2012024006A2 (en) * | 2010-05-21 | 2012-02-23 | Princeton University | Structures for enhancement of local electric field, light absorption, light radiation, material detection and methods for making and using of the same |
US9410949B2 (en) * | 2010-12-03 | 2016-08-09 | Washington University In St. Louis | Label-free detection of renal cancer |
CN103765208B (zh) * | 2011-09-22 | 2016-01-20 | 华东理工大学 | 金属纳米颗粒及其制备方法与用途 |
US20140198314A1 (en) * | 2011-10-18 | 2014-07-17 | Zhiyong Li | Molecular sensing device |
JP5823053B2 (ja) * | 2011-10-26 | 2015-11-25 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 検知用途で使用する装置及び検知の用途を果たす方法 |
US8810789B2 (en) * | 2011-11-07 | 2014-08-19 | University Of Georgia Research Foundation, Inc. | Thin layer chromatography-surfaced enhanced Raman spectroscopy chips and methods of use |
TWI490474B (zh) | 2012-01-12 | 2015-07-01 | Phansco Corp | 表面增強拉曼光譜(sers)感測基板及其製造方法 |
GB201205178D0 (en) | 2012-03-23 | 2012-05-09 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
DK2839295T3 (en) * | 2012-04-20 | 2017-05-15 | Hewlett-Packard Dev Company | Integrated sensors |
CN102701138A (zh) * | 2012-04-27 | 2012-10-03 | 苏州大学 | 一种金属辅助硅纳米线阵列大面积分层刻蚀和转移方法 |
JP5935492B2 (ja) * | 2012-05-01 | 2016-06-15 | セイコーエプソン株式会社 | 光学デバイス及び検出装置 |
JP2014010046A (ja) * | 2012-06-29 | 2014-01-20 | Seiko Epson Corp | 物質検出装置、腕時計型体脂肪燃焼測定装置 |
TWI469917B (zh) * | 2012-08-09 | 2015-01-21 | Nat Univ Tsing Hua | 具表面增強拉曼散射活性之結構、其製造方法及其偵測裝置 |
JP2014119263A (ja) * | 2012-12-13 | 2014-06-30 | Seiko Epson Corp | 光学デバイス、検出装置、電子機器及び光学デバイスの製造方法 |
US10067060B2 (en) * | 2013-01-30 | 2018-09-04 | Hewlett-Packard Development Company, L.P. | Polarization selective surface enhanced raman spectroscopy |
EP2951562A1 (en) * | 2013-01-30 | 2015-12-09 | Hewlett-Packard Development Company, L.P. | Polarization selective surface enhanced raman spectroscopy |
JP2016505157A (ja) * | 2013-01-30 | 2016-02-18 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー.Hewlett‐Packard Development Company, L.P. | 表面増強蛍光分光装置 |
US20140268128A1 (en) * | 2013-03-12 | 2014-09-18 | Hewlett-Packard Development Company, L.P. | Self-Exciting Surface Enhanced Raman Spectroscopy |
WO2015009737A1 (en) * | 2013-07-18 | 2015-01-22 | Optokey, Inc. | Surface enhanced raman spectroscopy resonator structures and methods of making same |
EP2977347A1 (en) * | 2014-07-22 | 2016-01-27 | Niklas Anttu | Optical molecular nanowire sensor |
US20160169886A1 (en) * | 2014-12-10 | 2016-06-16 | The Trustees Of Princeton University | Assay structures and enhancement by selective modification and binding on amplification structures |
CN104897638B (zh) | 2015-04-24 | 2017-09-26 | 中国科学院合肥物质科学研究院 | 银‑锗‑铜复合结构器件及其制备方法和用途 |
CN204758556U (zh) * | 2015-06-23 | 2015-11-11 | 中美华世通生物医药科技(武汉)有限公司 | 薄层层析装置 |
TWI582403B (zh) * | 2015-12-24 | 2017-05-11 | 財團法人工業技術研究院 | 感測晶片 |
TW201725385A (zh) * | 2016-01-05 | 2017-07-16 | 財團法人工業技術研究院 | 具有薄層層析之拉曼檢測晶片及分離檢測分析物之方法 |
CN106841314B (zh) * | 2017-03-29 | 2019-10-11 | 西安交通大学 | 一种基于纳米TiO2的低功耗微纳气体传感器及制备方法 |
-
2016
- 2016-11-21 TW TW105138051A patent/TW201725385A/zh unknown
- 2016-12-20 CN CN201611186111.1A patent/CN106940309B/zh active Active
- 2016-12-29 US US15/394,045 patent/US10012625B2/en active Active
-
2017
- 2017-11-21 TW TW106140275A patent/TWI634329B/zh active
- 2017-12-27 CN CN201711444998.4A patent/CN109813696B/zh active Active
-
2018
- 2018-04-30 US US15/966,776 patent/US10520363B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103620358A (zh) * | 2011-05-20 | 2014-03-05 | 惠普发展公司,有限责任合伙企业 | 表面增强拉曼光谱传感器、传感***和方法 |
CN104937391A (zh) * | 2013-01-25 | 2015-09-23 | 惠普发展公司,有限责任合伙企业 | 化学传感装置 |
CN104422751A (zh) * | 2013-08-22 | 2015-03-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 生化分离检测一体芯片及其制备方法 |
CN105259158A (zh) * | 2015-11-13 | 2016-01-20 | 暨南大学 | 一种表面增强拉曼散射免疫层析试纸条及制备方法与应用 |
Non-Patent Citations (4)
Title |
---|
"Arrays of Cone-Shaped ZnO Nanorods Decorated with Ag Nanoparticles as 3D Surface-Enhanced Raman Scattering Substrates for Rapid Detection of Trace Polychlorinated Biphenyls";Haibin Tang 等;《ADVANCED FUNCTIONAL MATERIAL》;20121231;第22卷;第218-224页 * |
"On-Chip Ultra-Thin Layer Chromatography and Surface Enhanced Raman Spectroscopy";Jing Chen 等;《Lab on a Chip》;20121231;第12卷;第3096-3102页 * |
"Surface Enhanced Raman Scattering Imaging of Developed Thin-Layer Chromatography Plates";Chris E.Freye 等;《analytical chemistry》;20131231;第85卷;第3991-3998页 * |
"ZnO-nanotaper array sacrificial templated synthesis of noble-metal building-block assembled nanotube arrays as 3D SERS-substrates ";Chuhong Zhu 等;《Nano Research》;20151231;第8卷(第3期);第957-966页 * |
Also Published As
Publication number | Publication date |
---|---|
TW201819906A (zh) | 2018-06-01 |
TWI634329B (zh) | 2018-09-01 |
TW201725385A (zh) | 2017-07-16 |
US10520363B2 (en) | 2019-12-31 |
US20180245981A1 (en) | 2018-08-30 |
US20170191938A1 (en) | 2017-07-06 |
CN109813696A (zh) | 2019-05-28 |
CN109813696B (zh) | 2021-08-31 |
US10012625B2 (en) | 2018-07-03 |
CN106940309A (zh) | 2017-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106940309B (zh) | 具有薄层层析的拉曼检测芯片及分离检测分析物的方法 | |
US8902420B2 (en) | Sensor chip for biomedical and micro-nano structured substances and method for manufacturing the same | |
EP2771658B1 (en) | Apparatus for use in a sensing application having a destructible cover | |
Berduque et al. | Voltammetric characterisation of silicon-based microelectrode arrays and their application to mercury-free stripping voltammetry of copper ions | |
US9915614B2 (en) | Microfluidic systems and devices for molecular capture, manipulation, and analysis | |
Convertino et al. | Disordered array of Au covered Silicon nanowires for SERS biosensing combined with electrochemical detection | |
JP5969711B2 (ja) | 化学センサデバイス | |
CN103926231B (zh) | 光学感测芯片 | |
KR101412420B1 (ko) | 표면증강 라만 산란 센서 및 그 센싱방법 | |
JP2016509675A (ja) | 化学的な検知器 | |
Ngan et al. | Improvement of Raman enhancement factor due to the use of silver nanoparticles coated obliquely aligned silicon nanowire arrays in SERS measurements | |
US20220091041A1 (en) | Nanowire array for use with raman spectroscopy | |
Kleps et al. | New micro-and nanoelectrode arrays for biomedical applications | |
WO2006134376A2 (en) | Flag free chemical capture detection | |
KR102132624B1 (ko) | 라만 분광 기판, 이의 제조 방법, 이를 포함하는 분석 장치 및 분석 방법 | |
JP2005249546A (ja) | ウエハ表面の金属元素の分析方法 | |
US20230349763A1 (en) | Raman detecting chip, method of fabricating the same and raman spetroscopy detecting system using such raman detecting chip | |
RU2821168C1 (ru) | Чувствительный элемент датчика для определения концентрации кислот и щелочей в жидкости или газе и способ его изготовления | |
US20210198663A1 (en) | Nanowires/Microscale Pyramids (NWs/MPs) Complex Structure, Method for manufacturing the Same and Its Applications to Isolation of Circulating tumor cells (CTCs) and Detection of Epstein-Barr virus (EBV) DNA | |
JP3612245B2 (ja) | 基板の不純物濃度分析方法 | |
US20220268683A1 (en) | Label-free, on-chip detection of opioids through surface-enhanced raman spectroscopy | |
US10900906B2 (en) | Surface enhanced Raman scattering substrate | |
Thien et al. | Ag-Coated Si nanowire arrays: A new route for the precise detection of fungicides by surface enhanced Raman scattering | |
KR20170057497A (ko) | 표면증강 라만산란 기판, 이의 제조방법 및 이를 이용한 분석 방법 | |
US20210116383A1 (en) | Staircase surface-enhanced raman scattering substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |