CN106936385A - The crystal oscillating circuit of low-power consumption Width funtion - Google Patents
The crystal oscillating circuit of low-power consumption Width funtion Download PDFInfo
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- CN106936385A CN106936385A CN201511029368.1A CN201511029368A CN106936385A CN 106936385 A CN106936385 A CN 106936385A CN 201511029368 A CN201511029368 A CN 201511029368A CN 106936385 A CN106936385 A CN 106936385A
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- 239000013078 crystal Substances 0.000 title claims abstract description 44
- 230000010355 oscillation Effects 0.000 claims abstract description 27
- 238000007493 shaping process Methods 0.000 claims abstract description 13
- 230000006641 stabilisation Effects 0.000 claims abstract description 13
- 238000011105 stabilization Methods 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 53
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
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Abstract
The present invention relates to a kind of crystal oscillating circuit of low-power consumption Width funtion, including base modules, it is used to be provided for oscillation module the reference voltage of stabilization；Oscillation module, the frequency signal of wide-voltage range is obtained to the reference voltage described in basis；Shaping Module, is used to carry out the frequency signal of described wide-voltage range shaping and export.Using this kind of crystal oscillating circuit of the low-power consumption Width funtion of structure, there is described circuit the depletion type NMOS tube self-starting of low unlatching to produce the electric current of stabilization for micro-current source unit provides reference current, shunt capacitance is connected between the output of micro-current source unit and ground, realize the conversion between Current Voltage, change the power supply of direction amplifier in conventional surge module into reference voltage simultaneously, feedback resistance changes CMOS resistance units into, impregnable frequency signal is exported with that can obtain in relative wide-voltage range, range of application is relatively broad.
Description
Technical field
The present invention relates to field of circuit technology, more particularly to crystal oscillating circuit, a kind of crystal oscillating circuit of low-power consumption Width funtion is specifically referred to.
Background technology
With the development of electronic technology, RTC will be used in many digital integrated electronic circuits, and crystal oscillating circuit is to ensure that
The key component of RTC work accurate timings, is widely used in all kinds of oscillating circuits such as colour TV, computer, remote control, with
And be used for frequency generator in communication system, clock signal produced for data processing and for specific system provides reference signal.Pressure
Electrical oscillator is low due to frequency stability, small-size light-weight, price, is applied to the communication apparatus such as mobile phone and similar quartz clock
In the civil equipment of table.Wherein, the temperature-compensated piezoelectric oscillator of the frequency-temperature characteristic of piezoelectric vibrator is compensate for, is being needed
It is widely used in mobile phone of frequency stabilization type etc..
Fig. 1 is traditional oscillating circuit, feedback resistance Rf, and its effect is to stablize output amplitude and phase；Drive current-limiting resistance
R1, limits sign-changing amplifier output amplitude, while playing a part of to suppress EM1；Driving current-limiting resistance R1 can not be used,
But when chip power output is larger, or frequency of oscillation it is higher when, it is proposed that use driving current-limiting resistance R1, to prevent crystal
It is easily overdriven；Driving current-limiting resistance R1 can not be too big, and its resistance should be suitable with the reactance value of the second electric capacity C2；First electric capacity
C1, the second electric capacity C2 are load capacitance.Feedback resistance Rf provides biasing for phase inverter, is operated in metal-oxide-semiconductor therein full
With area obtaining larger gain.The frequency signal that the oscillating circuit is exported in wide-voltage range will be varied from.
Crystal oscillating circuit is traditional mainly for ensuring real-time clock (RTC, Real Time Clock) work accurate timing
There is no mu balanced circuit in crystal oscillating circuit, when supply voltage changes, the frequency signal that oscillating circuit is exported just has trickle
Change, although simply trickle change, can be brought by that after prolonged superposition, clock can be made to produce gross error
Large effect, while traditional crystal oscillating circuit is relatively stringent to technique and power consumption is big in the design process.
The content of the invention
The purpose of the present invention is at least one shortcoming for overcoming above-mentioned prior art, there is provided one kind can improve frequency-power supply electricity
The crystal oscillating circuit of the low-power consumption Width funtion of pressure stability, reduction volume, reduces cost and power consumption.
To achieve these goals, the crystal oscillating circuit of low-power consumption Width funtion of the invention has following composition：
The crystal oscillating circuit of the low-power consumption Width funtion, it is mainly characterized by, and described circuit includes：
Base modules, are used to be provided for oscillation module the reference voltage of stabilization；
Oscillation module, the frequency signal of wide-voltage range is obtained to the reference voltage described in basis；
Shaping Module, is used to carry out the frequency signal of described wide-voltage range shaping and export.
Further, described base modules include：
Depletion type NMOS tube, is used to provide reference current for micro-current source unit；
Micro-current source unit, its output end is grounded by shunt capacitance, to realize the conversion between Current Voltage.
Further, described micro-current source unit is image current source unit.
Further, described oscillation module includes stabilized power source unit, CMOS resistance units, crystal oscillator, the 3rd electric capacity, the
Four electric capacity and first resistor；The first end ground connection of the 3rd described electric capacity, the second end, the described crystalline substance of described the 3rd electric capacity
The first end shaken, the first end of described CMOS resistance units, the first end of described stabilized power source unit are connected, described
The 4th electric capacity first end ground connection, the second end, the second end of described crystal oscillator, the described CMOS of described the 4th electric capacity
Second end of resistance unit and the first end of described first resistor are connected, the second end of described first resistor, described
Second end of stabilized power source unit and the output end of described oscillation module are connected, the 3rd end of described stabilized power source unit
Ground connection, the 4th end of described stabilized power source unit is connected with the output end of described base modules, described CMOS resistance
The 3rd end ground connection of unit, the 4th end of described CMOS resistance units is connected with the output end of described base modules.
Further, described stabilized power source unit includes the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 4th described MOS
Second end of the grid of pipe, the grid of the 5th described metal-oxide-semiconductor and the 3rd described electric capacity is connected, the 4th described MOS
The source electrode of pipe is connected with the output end of described base modules, and the source electrode of the 5th described metal-oxide-semiconductor is connected to the ground, described
The drain electrode of the 4th metal-oxide-semiconductor, the described drain electrode of the 5th metal-oxide-semiconductor, the second end of described first resistor and described vibration
The output end of module is connected.
Further, described CMOS resistance units include the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 6th described MOS
The grounded-grid of pipe, the grid of the 7th described metal-oxide-semiconductor is connected with the output end of described base modules, and the described the 6th
The source electrode of metal-oxide-semiconductor, the source electrode of the 7th described metal-oxide-semiconductor are connected with the second end of the 3rd described electric capacity, and the described the 7th
The Substrate ground of metal-oxide-semiconductor, drain electrode, the drain electrode and described first of the 7th described metal-oxide-semiconductor of described the 6th metal-oxide-semiconductor
The first end of resistance is connected.
Further, described Shaping Module includes the 5th electric capacity, buffer cell and Schmidt trigger, the 5th described electricity
The output end of the oscillation module described in the first termination for holding, the second of the 5th described electric capacity terminates the input of described buffer cell
End, the input of the Schmidt trigger described in the output termination of described buffer cell, the output of described Schmidt trigger
It is the output end of described crystal oscillating circuit to hold.
The crystal oscillating circuit of the low-power consumption Width funtion in the invention is employed, compared with prior art, with following beneficial technology effect
Really：
The signal source of stabilization is produced as the power supply of inverting amplifier in oscillation module by base modules, while feedback resistance is utilized
Metal-oxide-semiconductor realization, makes it significantly improve influence of the voltage change to frequency.Chip area is reduced simultaneously, and power consumption is very low, it is right
Technological requirement is low, does not have specific components, using common CMOS logic it is achieved that be increased without extra technique into
This, range of application is relatively broad.
Brief description of the drawings
Fig. 1 is the circuit diagram of crystal oscillator of the prior art.
Fig. 2 is the structural representation of the crystal oscillating circuit of low-power consumption Width funtion of the invention.
Fig. 3 is the circuit diagram of base modules of the invention.
Fig. 4 is the circuit diagram of oscillation module of the invention.
Fig. 5 is the circuit diagram of Shaping Module of the invention.
Specific embodiment
In order to more clearly describe technology contents of the invention, conducted further description with reference to specific embodiment.
The crystal oscillating circuit of the low-power consumption Width funtion in the present invention is mainly realized by a reference circuit as the power supply of oscillating circuit
The purpose of (1.8V~5.5V) frequency stabilization in wide-voltage range.The advantage of this circuit is that the frequency of Width funtion is all steady
Fixed, other circuits can be supplied to use as the frequency source of stabilization, reduce influence of the frequency change to systematic function.Together
When reduce crystal oscillating circuit power consumption and to technological requirement.
Refer to shown in Fig. 2, the present invention provides a kind of crystalline substance that can reduce the low-power consumption Width funtion that power source change influences on crystal oscillator frequency
Shake circuit.Frequency-supply voltage stability is improved, reduces volume, reduces cost and power consumption, to crystal oscillator in raising practicality
Performance.In order to achieve this, the present invention is used to the base modules of voltage stabilizing by increasing the oscillation module in crystal circuit, drop
Low influence of the voltage change to frequency.The simple structure is easily achieved simultaneously, and reduces crystal oscillator Induction Peried, inexpensive and low
Power consumption.
The crystal oscillating circuit of low-power consumption Width funtion of the invention includes：
Base modules, are used to be provided for oscillation module the reference voltage of stabilization；
Oscillation module, the frequency signal of wide-voltage range is obtained to the reference voltage described in basis；
Shaping Module, is used to carry out the frequency signal of described wide-voltage range shaping and export.
On circuit after electricity, produce the voltage of stabilization as the power supply of oscillation module by core of base modules, realize that supply voltage changes
Become the influence to oscillation module no-voltage characteristic, eventually pass Shaping Module, the stability of output frequency.
Refer to shown in Fig. 3, described base modules include：
Depletion type NMOS tube M1 with low turn-on voltage, is used to provide reference current for micro-current source unit；
Micro-current source unit, its output end is grounded by shunt capacitance Cp, to realize the conversion between Current Voltage.
And, in a preferred embodiment, described micro-current source unit is image current source unit.
Referring to Fig. 3, in actual applications, the base modules include depletion type NMOS tube M1, and this pipe is in system
When making due in silicon dioxide insulating layer mixed with substantial amounts of cation, even if in Vgs=0, due to the effect of cation, can be
More negative electrical charge is induced in the middle P type substrate in source region and drain region, N-type channel is formed, source region is connected with drain region.
Under positive Vds effects, also there is larger drain current to flow to source electrode by draining.Depletion type NMOS tube can be positive or negative
Worked under gate source voltage, and substantially without grid current, and the more stable approximate ideal current source of drain current.The current source conduct
The micro-current source unit being made up of the second metal-oxide-semiconductor M2, the 3rd metal-oxide-semiconductor M3 provides reference current and passes through output current branch road
Obtain the image current of reference current.A shunt capacitance Cp is placed between the drain electrode of the 3rd metal-oxide-semiconductor M3 and ground simultaneously,
Effect is to produce high fdrequency component for by-pass switch over the ground.Because the absolute value of electric capacity typically can be controlled relatively accurately, and electric capacity
Temperature coefficient ratio resistance it is much smaller, so this technology provided in terms of bias current and mutual conductance preferably repeatability.By
Cause that the voltage of the output end of micro-current source is stablized relatively in the presence of shunt capacitance Cp, can be to shake below as reference voltage
Swing the voltage of circuit with stable.The base modules simple structure, output stabilization, and chip area is small, and it is low in energy consumption.
Refer to shown in Fig. 4, compared with traditional oscillating circuit, the oscillation module replaces the power supply of common sign-changing amplifier
On the basis of circuit produce burning voltage as power supply, overcome the frequency shift that power source change causes.Feedback resistance is replaced with
CMOS resistance units, opposed power changes this conducting resistance and stablizes relatively, and the relatively common resistance of area is smaller, reduces
Design cost.Specifically, described oscillation module includes stabilized power source unit, CMOS resistance units, crystal oscillator, the 3rd electric capacity
C3, the 4th electric capacity C4 and first resistor R1；The first end ground connection of the 3rd described electric capacity C3, the 3rd described electric capacity C3
The second end, the first end of described crystal oscillator, the first end of described CMOS resistance units, described stabilized power source unit
First end is connected, the first end ground connection of described the 4th electric capacity C4, the second end, the described crystalline substance of described the 4th electric capacity C4
The first end at the second end, the second end of described CMOS resistance units and described first resistor R1 that shake is connected, institute
The output end phase at second end of the first resistor R1 for stating, the second end of described stabilized power source unit and described oscillation module
Connection, the 3rd end ground connection of described stabilized power source unit, the 4th end of described stabilized power source unit and described base modules
Output end be connected, the 3rd end ground connection of described CMOS resistance units, the 4th end of described CMOS resistance units
Output end with described base modules is connected.
In a preferred embodiment, described stabilized power source unit includes the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5,
The grid of the 4th described metal-oxide-semiconductor M4, the grid of the 5th described metal-oxide-semiconductor M5 and the 3rd described electric capacity C3's
Second end is connected, and the source electrode of the 4th described metal-oxide-semiconductor M4 is connected with the output end of described base modules, and described
The source electrode of five metal-oxide-semiconductor M5 is connected to the ground, drain electrode, the 5th described metal-oxide-semiconductor M5 of described the 4th metal-oxide-semiconductor M4
Drain electrode, second end of described first resistor R1 and the output end of described oscillation module be connected.
In a preferred embodiment, described CMOS resistance units include the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor
The grounded-grid of M7, described the 6th metal-oxide-semiconductor M6, the grid and described base modules of described the 7th metal-oxide-semiconductor M7
Output end be connected, the source electrode of described the 6th metal-oxide-semiconductor M6, the source electrode of the 7th described metal-oxide-semiconductor M7 with it is described
Second end of the 3rd electric capacity C3 is connected, the Substrate ground of described the 7th metal-oxide-semiconductor M7, the 6th described metal-oxide-semiconductor M6
Drain electrode, the drain electrode of the 7th described metal-oxide-semiconductor M7 is connected with the first end of described first resistor R1.
Refer to shown in Fig. 5, described Shaping Module includes the 5th electric capacity C5, buffer cell BUFF and Schmidt trigger
The output end of the described oscillation module of first termination of SMT, described the 5th electric capacity C5, the second of described the 5th electric capacity C5
The input of the described buffer cell BUFF of termination, the schmidt trigger described in the output termination of described buffer cell BUFF
The input of device SMT, the output end of described Schmidt trigger SMT is the output end of described crystal oscillating circuit.
The crystal oscillating circuit of the low-power consumption Width funtion designed by the present invention not only can with simple RTC circuit, it is also possible to as one
Individual module is integrated in MCU or SOC.
The crystal oscillating circuit technological requirement of the low-power consumption Width funtion designed by the present invention is low, does not have specific components, using common
CMOS logic are it is achieved that be increased without extra process costs.
The crystal oscillating circuit of the low-power consumption Width funtion in the invention is employed, compared with prior art, with following beneficial technology effect
Really：
The signal source of stabilization is produced as the power supply of inverting amplifier in oscillation module by base modules, while feedback resistance is utilized
Metal-oxide-semiconductor realization, makes it significantly improve influence of the voltage change to frequency.Chip area is reduced simultaneously, and power consumption is very low, it is right
Technological requirement is low, does not have specific components, using common CMOS logic it is achieved that be increased without extra technique into
This, range of application is relatively broad.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that can still make various
Modification and conversion are without departing from the spirit and scope of the present invention.Therefore, specification and drawings are considered as illustrative rather than limit
Property processed.
Claims (7)
1. a kind of crystal oscillating circuit of low-power consumption Width funtion, it is characterised in that described circuit includes：
Base modules, are used to be provided for oscillation module the reference voltage of stabilization；
Oscillation module, the frequency signal of wide-voltage range is obtained to the reference voltage described in basis；
Shaping Module, is used to carry out the frequency signal of described wide-voltage range shaping and export.
2. the crystal oscillating circuit of low-power consumption Width funtion according to claim 1, it is characterised in that described base modules include：
Depletion type NMOS tube (M1), is used to provide reference current for micro-current source unit；
Micro-current source unit, its output end is grounded by shunt capacitance (Cp), to realize the conversion between Current Voltage.
3. the crystal oscillating circuit of low-power consumption Width funtion according to claim 2, it is characterised in that described micro-current source unit
It is image current source unit.
4. the crystal oscillating circuit of low-power consumption Width funtion according to claim 1, it is characterised in that described oscillation module includes
Stabilized power source unit, CMOS resistance units, crystal oscillator, the 3rd electric capacity (C3), the 4th electric capacity (C4) and first resistor (R1)；
The first end ground connection of the 3rd described electric capacity (C3), the second end, the first of described crystal oscillator of described the 3rd electric capacity (C3)
End, the first end of described CMOS resistance units, the first end of described stabilized power source unit are connected, the 4th described electricity
Hold the first end ground connection of (C4), it is the second end of described the 4th electric capacity (C4), the second end of described crystal oscillator, described
The first end of the second end of CMOS resistance units and described first resistor (R1) is connected, described first resistor (R1)
The second end, the second end of described stabilized power source unit and the output end of described oscillation module be connected, described stabilization
The 3rd end ground connection of power subsystem, the 4th end of described stabilized power source unit is connected with the output end of described base modules,
The 3rd end ground connection of described CMOS resistance units, the 4th end of described CMOS resistance units and described base modules
Output end be connected.
5. the crystal oscillating circuit of low-power consumption Width funtion according to claim 4, it is characterised in that described stabilized power source unit
It is the grid of described the 4th metal-oxide-semiconductor (M4), described including the 4th metal-oxide-semiconductor (M4), the 5th metal-oxide-semiconductor (M5)
Second end of the grid of the 5th metal-oxide-semiconductor (M5) and the 3rd described electric capacity (C3) is connected, the 4th described MOS
The source electrode for managing (M4) is connected with the output end of described base modules, source electrode and the ground of described the 5th metal-oxide-semiconductor (M5)
It is connected, drain electrode, the drain electrode of the 5th described metal-oxide-semiconductor (M5), described of described the 4th metal-oxide-semiconductor (M4)
Second end of one resistance (R1) and the output end of described oscillation module are connected.
6. the crystal oscillating circuit of low-power consumption Width funtion according to claim 4, it is characterised in that described CMOS resistance
Unit includes the 6th metal-oxide-semiconductor (M6), the 7th metal-oxide-semiconductor (M7), the grounded-grid of described the 6th metal-oxide-semiconductor (M6),
The grid of the 7th described metal-oxide-semiconductor (M7) is connected with the output end of described base modules, the 6th described metal-oxide-semiconductor
(M6) source electrode, the source electrode of the 7th described metal-oxide-semiconductor (M7) are connected with the second end of the 3rd described electric capacity (C3),
The Substrate ground of the 7th described metal-oxide-semiconductor (M7), drain electrode, the described the 7th of described the 6th metal-oxide-semiconductor (M6)
The drain electrode of metal-oxide-semiconductor (M7) is connected with the first end of described first resistor (R1).
7. the crystal oscillating circuit of low-power consumption Width funtion according to claim 1, it is characterised in that described Shaping Module includes
5th electric capacity (C5), buffer cell (BUFF) and Schmidt trigger (SMT), described the 5th electric capacity (C5)
The output end of the described oscillation module of the first termination, the second of the 5th described electric capacity (C5) terminates described buffer cell
(BUFF) input, Schmidt trigger (SMT) described in the output termination of described buffer cell (BUFF)
Input, the output end of described Schmidt trigger (SMT) is the output end of described crystal oscillating circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201511029368.1A CN106936385A (en) | 2015-12-31 | 2015-12-31 | The crystal oscillating circuit of low-power consumption Width funtion |
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| CN201511029368.1A CN106936385A (en) | 2015-12-31 | 2015-12-31 | The crystal oscillating circuit of low-power consumption Width funtion |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108718191A (en) * | 2018-08-14 | 2018-10-30 | 上海艾为电子技术股份有限公司 | A kind of pierce circuit |
| CN109714044A (en) * | 2018-12-11 | 2019-05-03 | 中山芯达电子科技有限公司 | A kind of crystal oscillator driving circuit of closed-loop feed-back type high reliablity |
| CN112886926A (en) * | 2019-11-29 | 2021-06-01 | 成都锐成芯微科技股份有限公司 | Low-power consumption oscillator |
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| CN108718191B (en) * | 2018-08-14 | 2023-09-19 | 上海艾为电子技术股份有限公司 | Oscillator circuit |
| CN109714044A (en) * | 2018-12-11 | 2019-05-03 | 中山芯达电子科技有限公司 | A kind of crystal oscillator driving circuit of closed-loop feed-back type high reliablity |
| CN109714044B (en) * | 2018-12-11 | 2023-03-24 | 中山芯达电子科技有限公司 | Closed-loop feedback type crystal oscillator driving circuit with high reliability |
| CN112886926A (en) * | 2019-11-29 | 2021-06-01 | 成都锐成芯微科技股份有限公司 | Low-power consumption oscillator |
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Application publication date: 20170707 |