CN106915723B - Beam-mass block structure preparation method based on laser combination anisotropic etch - Google Patents
Beam-mass block structure preparation method based on laser combination anisotropic etch Download PDFInfo
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- CN106915723B CN106915723B CN201510998013.7A CN201510998013A CN106915723B CN 106915723 B CN106915723 B CN 106915723B CN 201510998013 A CN201510998013 A CN 201510998013A CN 106915723 B CN106915723 B CN 106915723B
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
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Abstract
The present invention provides a kind of beam-mass block structure preparation method based on laser combination anisotropic etch, comprising the following steps: 1) provides (111) silicon wafer；2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology；3) the second deep trouth is formed in (111) front side of silicon wafer；4) the first oxide layer is formed in (111) silicon chip surface, first deep trouth and second deep trouth side and bottom；5) third deep trouth is formed in (111) front side of silicon wafer；6) the second oxide layer is formed in the side and bottom of the first oxidation layer surface and the third deep trouth；7) beam is discharged using reactive ion etching process and anisotropy rot etching technique.Beam-mass block structure is formed using laser processing technology association reaction ion etch process and anisotropy rot etching technique, the cost of entire technique can be reduced；The thickness of girder construction is determined that craft precision is high by the deep reaction ion etching carried out from (111) front side of silicon wafer.
Description
Technical field
The invention belongs to technical field of micro and nano fabrication, more particularly to a kind of based on laser combination anisotropic etch
Beam-mass block structure preparation method.
Background technique
Micro electro mechanical system (MEMS) technology (MEMS, Micro Electro Mechanical System) is using simultaneous with integrated circuit
The technique of appearance realizes the integrated of sensor and actuator on silicon wafer, is a branch of integrated circuit.Currently, MEMS
The pillar product of technical field includes acceleration transducer, micromechanical gyro, pressure sensor, microphone, digital projection core
Piece etc..Wherein acceleration transducer and micromechanical gyro etc. generally use beam-mass block structure, generally use surface micro or
The production of bulk silicon micromachining technology.Since the performance of the inertia devices such as acceleration transducer and micromechanical gyro is related to quality,
The more big then overall performance of the quality of run-of-the-mill block is higher, and high performance acceleration transducer and micromechanical gyro generally use body
Micromechanical process production.
Bulk silicon micromachining technology is developed from integrated circuit technology, and typical process flow is to be made by circulation
Corroded on silicon wafer with photoetching process and etching process and forms structure.Body micromechanical process has identical with integrated circuit technology
Feature is parallel fabrication technique, i.e., processes simultaneously to all chip units on silicon wafer, therefore be easy to implement mass system
It makes.But on the other hand, existing body micromechanics etching process type is few, especially for high-aspect-ratio (i.e. depth and width
The ratio of degree) structure, it is necessary to using deep reaction ion etching technique (Deep Reactive Ion Etching, DRIE) plus
Work.The etching depth-to-width ratio of deep reaction ion etching technique is up to 25:1, and the control precision of etching depth is higher, is that production is high
The critical process of performance inertial sensor, but the higher cost of the technique, have a significant impact to the cost of sensor.
Laser processing technology is a kind of serial processing technology, i.e., laser processing is chip ablation one by one.With laser plus
The continuous improvement of work machine power, the efficiency of laser processing can be comparable with parallel fabrication technique, and processing cost is significantly low
In deep reaction ion etching technique.Limitation laser processing it is widely applied in sensor manufacture view main reason is that, laser
The control precision and deep reaction ion etching technique of ablation depth have gap, it is difficult to keep higher while guaranteeing processing efficiency
Control precision.
Summary of the invention
In view of the foregoing deficiencies of prior art, the invention proposes a kind of deep reaction ion etchings, anisotropic wet
The technique that method corrosion is combined with laser processing, can make beam-mass block structure of thickness controllable precise on (111) silicon wafer,
High-precision, the low cost manufacturing of the devices such as acceleration transducer and micromechanical gyro can be achieved.
His related purpose to achieve the above object, the present invention provide a kind of based on laser combination anisotropic etch
Beam-mass block structure preparation method, the preparation method comprises the following steps:
1) (111) silicon wafer is provided；
2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is annular
Closed slots is surrounded on the subsequent area periphery that form mass block；
3) the second deep trouth being formed in (111) front side of silicon wafer, second deep trouth is corresponding up and down with first deep trouth,
And by the subsequent region segmentation that form beam be multistage；The sum of the depth of first deep trouth and second deep trouth is greater than or waits
In the thickness of (111) silicon wafer；
4) the first oxygen is formed in (111) silicon chip surface, first deep trouth and second deep trouth side and bottom
Change layer；
5) third deep trouth is formed in (111) front side of silicon wafer, the third deep trouth is located at the subsequent region that form beam
Two sides, and extend along the length direction in the subsequent region that form beam, and one end is connected with second deep trouth；
6) the second oxide layer is formed in the side and bottom of the first oxidation layer surface and the third deep trouth；
7) beam is discharged using reactive ion etching process and anisotropy rot etching technique.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Scheme is selected, the depth of first deep trouth formed in step 2) meets following relational expression:
hlt=H-hb-δ
In formula, hltFor the depth of first deep trouth, H is the thickness of described (111) silicon wafer, hbFor subsequent beam to be formed
Thickness, δ is safe clearance.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Scheme is selected, the width of second deep trouth formed in step 3) meets following relational expression:
wdt≤wlt-2ε
In formula, wdtFor the width of second deep trouth, wltFor the width of first deep trouth, the ε anti-lithography alignment that is positive is missed
Difference.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Scheme is selected, in step 4), using thermal oxidation technology in (111) silicon chip surface, first deep trouth and second deep trouth
First oxide layer is formed on side and bottom.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Scheme is selected, the length direction of the third deep trouth formed in step 5) is along<112>crystal orientation；The depth of the third deep trouth is equal to
The thickness of subsequent beam to be formed, the length of the third deep trouth are equal to the length of subsequent beam to be formed, want shape positioned at subsequent
The interval width of the third deep trouth of the region two sides of Cheng Liang is equal to the width of subsequent beam to be formed；It to be formed positioned at subsequent
The interval width of the third deep trouth of the region two sides of beam and the length of the third deep trouth meet following relational expression:
In formula, w1For positioned at the interval width of the third deep trouth of the subsequent region two sides that form beam, L1It is described
The length of three deep trouths.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Scheme is selected, in step 6), using thermal oxidation technology in the first oxidation layer surface and the side and bottom of the third deep trouth
Form second oxide layer.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Scheme is selected, the thickness of second oxide layer is less than the thickness of first oxide layer.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
It selects scheme, in step 7), is included the following steps: using reactive ion etching process and anisotropy rot etching technique release beam
71) second oxide layer of third deep trouth bottom is removed using reactive ion etching process；
72) (111) silicon wafer described in etching is continued from third deep trouth bottom using deep reaction ion etching technique；
73) continued described in the zonal corrosion of etching using anisotropic wet corrosive liquid from third deep trouth bottom
(111) silicon wafer, so that the region for continuing etching from third deep trouth bottom for being located at the subsequent region two sides that form beam connects
Lead to together, to ensure that beam is completely released.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Select scheme, in step 72), the depth for continuing etching from third deep trouth bottom meets following relational expression:
h2> H-hlt-hb
In formula, h2For the depth for continuing etching from third deep trouth bottom, H is the thickness of described (111) silicon wafer, hltFor
The depth of first deep trouth, hbFor the depth of the third deep trouth.
One kind as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch is excellent
Select scheme, in step 73), the anisotropic wet corrosive liquid includes potassium hydroxide solution or tetramethyl ammonium hydroxide solution.
As described above, beam-mass block structure preparation method of the invention based on laser combination anisotropic etch, tool
Have following the utility model has the advantages that forming beam-using laser processing technology association reaction ion etch process and anisotropy rot etching technique
Mass block structure can reduce the cost of entire technique using the lower cost of laser processing technology；The thickness of girder construction by from
(111) deep reaction ion etching that front side of silicon wafer carries out determines, craft precision is high；It is accurate thickness can be made on (111) silicon wafer
Controllable beam-mass block structure, it can be achieved that the devices such as acceleration transducer and micromechanical gyro high-precision, low cost manufacturing.
Detailed description of the invention
Fig. 1 is shown as beam-mass block structure preparation method of the invention based on laser combination anisotropic etch
Flow chart.
Fig. 2 to Figure 20 is shown as beam-mass block structure preparation of the invention based on laser combination anisotropic etch
The structural schematic diagram of each step in method.
Component label instructions
1 (111) silicon wafer
2 first deep trouths
3 second deep trouths
4 third deep trouths
5 continue the region of etching from third deep trouth bottom
6 release cavitys
7 mass blocks
8 beams
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 to Figure 20 is please referred to it should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Referring to Fig. 1, the present invention also provides a kind of beam-mass block structure systems based on laser combination anisotropic etch
Preparation Method, beam-mass block structure preparation method based on laser combination anisotropic etch the following steps are included:
1) (111) silicon wafer is provided；
2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is annular
Closed slots is surrounded on the subsequent area periphery that form mass block；
3) the second deep trouth being formed in (111) front side of silicon wafer, second deep trouth is corresponding up and down with first deep trouth,
And by the subsequent region segmentation that form beam be multistage；The sum of the depth of first deep trouth and second deep trouth is greater than or waits
In the thickness of (111) silicon wafer；
4) the first oxygen is formed in (111) silicon chip surface, first deep trouth and second deep trouth side and bottom
Change layer；
5) third deep trouth is formed in (111) front side of silicon wafer, the third deep trouth is located at the subsequent region that form beam
Two sides, and extend along the length direction in the subsequent region that form beam, and one end is connected with second deep trouth；
6) the second oxide layer is formed in the side and bottom of the first oxidation layer surface and the third deep trouth；
7) beam is discharged using reactive ion etching process and anisotropy rot etching technique.
In step 1), S1 step and Fig. 2 in Fig. 1 are please referred to, (111) silicon wafer 1 is provided.
As an example, (111) the silicon wafer 1 as angle of upper and lower surface and monocrystalline silicon (111) crystal face is in ± 1 ° of range
Interior monocrystalline silicon piece.
In step 2), the S2 step and Fig. 3 to Fig. 4 in Fig. 1 are please referred to, wherein Fig. 3 is the corresponding three-dimensional knot of the step
Structure schematic diagram, Fig. 4 is the corresponding cross section structure schematic diagram of the step, using laser processing technology at 1 back side of (111) silicon wafer
The first deep trouth 2 is formed, first deep trouth 2 is annular closed slots, is surrounded on the subsequent area periphery that form mass block, i.e. institute
Stating the circular interior zone of the first deep trouth 2 is subsequent mass block to be formed.
As an example, the depth of first deep trouth 2 meets following relational expression:
hlt=H-hb-δ
In formula, hltFor the depth of first deep trouth 2, H is the thickness of described (111) silicon wafer 1, hbIt is subsequent to be formed
The thickness of beam, δ are safe clearance, and safe clearance δ can be but be not limited only to 3 times of laser processing technology error.
As an example, can be processed using nanosecond laser or picosecond laser to the back side of (111) silicon wafer 1
To form first deep trouth 2.
Since cost is relatively low for laser processing technology, formed using laser processing technology at the back side of (111) silicon wafer 1
First deep trouth 2, can reduce the cost of entire technique.
It should be noted that (111) silicon wafer described in Fig. 31 are opaque structure, this time for the ease of display described first
Deliberately (111) silicon wafer 1 by described in is depicted as transparent configuration to deep trouth 2.
In step 3), the S3 step and Fig. 5 to Fig. 7 in Fig. 1 are please referred to, forms second in 1 front of (111) silicon wafer
Deep trouth 3, second deep trouth 3 is corresponding with about 2 first deep trouth, and is multistage by the subsequent region segmentation that form beam；
The sum of first deep trouth 2 and the depth of second deep trouth 3 are greater than or equal to the thickness of described (111) silicon wafer 1.
As an example, forming the second deep trouth 3 in 1 front of (111) silicon wafer method particularly includes: firstly, described
(111) 1 front surface coated photoresist layer (not shown) of silicon wafer；Secondly, defining institute in the photoresist layer using photoetching process
State the figure of the second deep trouth 3；Then, according to the patterned photoresist layer using described in deep reaction ion etching technique etching
(111) silicon wafer 1 is to form second deep trouth 3；Finally, removing the photoresist layer.
As an example, the position of second deep trouth 3 and first deep trouth 2 use double-sided alignment lithography alignment, with true
It protects second deep trouth 3 and about 2 first deep trouth is accurate corresponding.
As an example, the width of second deep trouth 3 meets following relational expression:
wdt≤wlt-2ε
In formula, wdtFor the width of second deep trouth 3, wltFor the width of first deep trouth 2, ε is positive anti-lithography alignment
Error.
The depth of second deep trouth 3 meets following relational expression:
hdt> H-hlt
In formula, hdtFor the depth of second deep trouth 3, H is the thickness of described (111) silicon wafer 1, hltIt is deep for described first
The depth of slot 2.The thickness that the depth of i.e. described second deep trouth 3 should be greater than (111) silicon wafer 1 subtracts first deep trouth 2
Depth forms the deep trouth of (111) silicon wafer 1 described in perforation to ensure that second deep trouth 3 can be connected to first deep trouth 2,
Mass block 7 to be discharged.
As an example, second deep trouth 3 is divided into multistage by the subsequent region that form beam, i.e., beam is formed subsequent
Region do not etch to form second deep trouth 3 so that second deep trouth 3 is not closed, subsequent to form beam corresponding to
Region forms opening, and after ensuring to be subsequently formed beam, one end of the beam of formation can be connected with the mass block 7, to play
Support the effect of the mass block 7.The quantity in the subsequent region that form beam can be set according to actual needs, i.e., subsequent
The quantity for forming beam can be set according to actual needs, herein without limitation.
In one example, Fig. 5 and Fig. 6 is please referred to, the quantity in the region of subsequent beam to be formed is 4, that is, is subsequently formed
The quantity of beam is 4, to form four beams-mass block structure after the completion of preparation；The region of 4 subsequent beams to be formed is symmetrically
It is distributed in the two sides of the mass block 7.Fig. 5 is the schematic perspective view that four beams-mass block structure corresponds to the step, and Fig. 6 is
The cross section structure schematic diagram of Fig. 5.
In another example, referring to Fig. 7, the quantity in the region of subsequent beam to be formed is 2, i.e., subsequent to form beam
Quantity be 2, with after the completion of preparation formed twin beams-mass block structure；2 subsequent region parallelly distribute ons that form beam in
The same side of the mass block 7, but be not limited thereto in specific example, 2 subsequent regions that form beam can also be symmetrical
Ground is distributed in the two sides of the mass block 7.Fig. 7 is the schematic perspective view that twin beams-mass block structure corresponds to the step.
In step 4), the S4 step in Fig. 1 is please referred to, in 1 surface of (111) silicon wafer, first deep trouth 2 and institute
It states 3 side of the second deep trouth and bottom and forms the first oxide layer.
As an example, can be by thermal oxidation technology in 1 surface of (111) silicon wafer, first deep trouth 2 and described
The first oxide layer (not shown) is formed on two deep trouths, 3 side and bottom.
As an example, the thickness of first oxide layer can select according to actual needs, herein with no restrictions.
In step 5), the S5 step and Fig. 8 to Figure 11 in Fig. 1 are please referred to, forms the in 1 front of (111) silicon wafer
Three deep trouths 4, the third deep trouth 4 are located at the subsequent region two sides that form beam, and the length along the subsequent region that form beam
Direction extends, and one end is connected with second deep trouth 3.
As an example, forming third deep trouth 4 in 1 front of (111) silicon wafer method particularly includes: firstly, described
(111) 1 front surface coated photoresist layer (not shown) of silicon wafer；Secondly, being defined as institute in the photoresist layer using photoetching process
The figure of third deep trouth 4 is stated, the figure of the third deep trouth 4 is located at the subsequent region two sides that form beam, and wants shape along subsequent
The length direction in the region of Cheng Liang extends, and one end partly overlaps with second deep trouth 3, and encirclement beam-mass block is collectively formed
The deep slot pattern of structure；Then, according to the institute in 4 figure of third deep trouth described in the patterned photoresist layer elder generation erosion removal
The first oxide layer is stated, then the third deep trouth 4 is formed using (111) silicon wafer 1 described in deep reaction ion etching technique etching；Most
Afterwards, the photoresist layer is removed.
As an example, the length direction of the third deep trouth 4 is along<112>crystal orientation；After the depth of the third deep trouth 4 is equal to
Continue the thickness of beam to be formed, the length of the third deep trouth 4 is equal to the length of subsequent beam to be formed, to be formed positioned at subsequent
The interval width of the third deep trouth 4 of the region two sides of beam is equal to the width of subsequent beam to be formed；It to be formed positioned at subsequent
The length of the interval width of the third deep trouth 4 of the region two sides of beam and the third deep trouth 4 be (i.e. subsequent beam to be formed
The length of width and beam) meet following relational expression:
In formula, w1For positioned at the interval width of the third deep trouth of the subsequent region two sides that form beam, L1It is described
The length of three deep trouths.
As an example, Fig. 8 is the schematic perspective view that four beams-mass block structure corresponds to the step, Fig. 9 is cutting for Fig. 8
Face structural schematic diagram, Figure 10 are the overlooking structure diagram of Fig. 8.
As an example, Figure 11 is the schematic perspective view that twin beams-mass block structure corresponds to the step.
In step 6), the S6 step in Fig. 1 is please referred to, in the first oxidation layer surface and the third deep trouth 4
Second oxide layer is formed on side and bottom.
As an example, can be using thermal oxidation technology in the first oxidation layer surface and the side of the third deep trouth 4
And second oxide layer is formed on bottom.
As an example, the thickness of second oxide layer can select according to actual needs, it is preferred that in originally implementing,
The thickness of second oxide layer is less than the thickness of first oxide layer.
In step 7), please refer to the S7 step and Figure 12 to Figure 20 in Fig. 1, using reactive ion etching process and respectively to
Isomerism erosion process discharges beam 8.
As an example, discharging the beam 8 using reactive ion etching process and anisotropy rot etching technique includes following step
It is rapid:
71) second oxide layer of 4 bottom of third deep trouth is removed using reactive ion etching process；Due to reaction
The sideetching rate of ion etching is much smaller than downward corrosion rate, is removing the third using reactive ion etching process
When second oxide layer of 4 bottom of deep trouth, second oxide layer of 4 side wall of third deep trouth is retained；Again by institute
Thickness of the thickness less than first oxide layer for stating the second oxide layer can be made by controlling the time of reactive ion etching
It obtains first oxide layer and retains certain thickness；
72) (111) silicon wafer 1 described in etching is continued from 4 bottom of third deep trouth using deep reaction ion etching technique,
4 bottom part down of third deep trouth forms the region 5 for continuing etching from third deep trouth bottom, as shown in Figure 12 to Figure 14, wherein
Figure 12 is the schematic perspective view that four beams-mass block structure corresponds to the step, and Figure 13 is the cross section structure schematic diagram of Figure 12, figure
14 correspond to the schematic perspective view of the step for twin beams-mass block structure；Since only 4 bottom of third deep trouth is no described
The protection of second oxide layer, the third deep trouth 4 continue to corrode downwards；Continue the depth of etching from 4 bottom of third deep trouth
Meet following relational expression:
h2> H-hlt-hb
In formula, h2Depth for the region 5 for continuing to etch from third deep trouth bottom, H are described (111) silicon wafer 1
Thickness, hltFor the depth of first deep trouth 2, hbFor the depth of the third deep trouth 3, i.e., described 4 twice etching of third deep trouth
Total depth should be greater than the thickness of (111) silicon wafer 1 and subtract the depth of first deep trouth 2；
73) corroded using anisotropic wet corrosive liquid from the region 5 that etching is continued in third deep trouth bottom described
(111) silicon wafer 1, so that being located at the region 5 for continuing etching from third deep trouth bottom of the subsequent region two sides that form beam
It is connected together, to ensure that beam 8 is completely released, as shown in Figure 15 to Figure 20, wherein Figure 15 is four beams-mass block structure pair
Should step schematic perspective view, Figure 16 be Figure 15 cross section structure schematic diagram, Figure 17 be Figure 15 plan structure illustrate
Figure, Figure 19 are the schematic perspective view that twin beams-mass block structure corresponds to the step；The anisotropic wet corrosive liquid includes
Potassium hydroxide solution or tetramethyl ammonium hydroxide solution.Since there are self-stopping technology characteristics for anisotropic etch, when etching time omits
When the time required to being longer than, structure is smaller by being influenced.Corrosion speed of the anisotropic wet corrosive liquid to monocrystalline silicon (111) crystal face
Rate is extremely low, only the 0.01 of (100) crystal face corrosion rate, can be neglected.The side wall of the third deep trouth 4 has second oxygen
Change layer protection, therefore will not be corroded；The side wall for continuing the region 5 of etching from third deep trouth bottom does not have second oxygen
Change layer protection, corrosion can be anisotropically etched, but the bottom of the third deep trouth 4 is (111) crystal face, therefore will not be certainly
Continue corrosion downwards in the bottom that the region 5 of etching is continued in third deep trouth bottom.The short side of the third deep trouth 4 is along<110>
Crystal orientation, anisotropic etchant corrosion under will form with upper surface (111) crystal orientation at 70.53 ° (11) crystal face (is all
{ 111 } family of crystal planes), corrosion can be automatically stopped；Anisotropic etchant is to the region 5 for continuing etching from third deep trouth bottom
Corrosion only along perpendicular to 4 longitudinal direction of third deep trouth carry out, i.e., along<110>crystal orientation carry out so that the beam 8 is released
It puts；The lower surface of the beam 8 is that anisotropic wet corrodes to form (111) face, the corrosion speed in anisotropic etchant
Rate is negligible, and therefore, the thickness of the beam 8 is approximately equal to the depth h of the third deep trouth 4b.When corrosion is in the beam 8
Lower section formed release cavity 6 when, it is described release cavity 6 each face be (111) crystal face, all directions corrosion rate is approximate
It is 0, corrosion is automatically stopped.
After the completion of step 73), the schematic perspective view of finally formed four beams-mass block structure is as shown in figure 18, most
End form at twin beams-mass block structure schematic perspective view it is as shown in figure 20；By Figure 18 and Figure 20 it is found that the beam 8 one
End is connected with the mass block 7, and the other end is connected with (111) silicon wafer 1, and the length direction of the beam 8 is brilliant along<112>
To, perpendicular to<110>crystal orientation.Pattern after being completed due to step 73) is complex, for the ease of display, Figure 18 and Figure 20
In, for being not illustrated to the negligible appearance structure of beam-mass block structure mechanical characteristic influence.
In conclusion the present invention provides a kind of beam-mass block structure preparation based on laser combination anisotropic etch
Method, 1) beam-mass block structure preparation method based on laser combination anisotropic etch is the following steps are included: provide
(111) silicon wafer；2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is ring
Shape closed slots is surrounded on the subsequent area periphery that form mass block；3) the second deep trouth is formed in (111) front side of silicon wafer,
Second deep trouth is corresponding up and down with first deep trouth, and is multistage by the subsequent region segmentation that form beam；Described first
The sum of depth of deep trouth and second deep trouth is greater than or equal to the thickness of described (111) silicon wafer；4) in (111) the silicon wafer table
First oxide layer is formed on face, first deep trouth and second deep trouth side and bottom；5) in (111) the front side of silicon wafer shape
At third deep trouth, the third deep trouth is located at the subsequent region two sides that form beam, and the length along the subsequent region that form beam
It spends direction to extend, and one end is connected with second deep trouth；6) in the first oxidation layer surface and the third deep trouth
Second oxide layer is formed on side and bottom；7) beam is discharged using reactive ion etching process and anisotropy rot etching technique.Using
Laser processing technology association reaction ion etch process and anisotropy rot etching technique form beam-mass block structure, utilize laser
The lower cost of processing technology, can reduce the cost of entire technique；The thickness of girder construction is by the depth that carries out from (111) front side of silicon wafer
Reactive ion etching determines that craft precision is high；Beam-mass block structure that thickness controllable precise can be made on (111) silicon wafer, can
Realize high-precision, the low cost manufacturing of the devices such as acceleration transducer and micromechanical gyro.
The effect of the principle of the present invention is only illustrated in above-described embodiment, and is not intended to limit the present invention.It is any to be familiar with
The personage of this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Therefore,
Such as those of ordinary skill in the art is completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of beam-mass block structure preparation method based on laser combination anisotropic etch, which is characterized in that the system
Preparation Method the following steps are included:
1) (111) silicon wafer is provided；
2) the first deep trouth is formed in (111) silicon chip back side using laser processing technology, first deep trouth is annular closure
Slot is surrounded on the subsequent area periphery that form mass block；
3) the second deep trouth is formed in (111) front side of silicon wafer, the width of second deep trouth is less than the width of first deep trouth
Degree, second deep trouth is corresponding up and down with first deep trouth, and is multistage by the subsequent region segmentation that form beam；Described
The sum of depth of one deep trouth and second deep trouth is greater than or equal to the thickness of described (111) silicon wafer；
4) the first oxide layer is formed in (111) silicon chip surface, first deep trouth and second deep trouth side and bottom；
5) third deep trouth being formed in (111) front side of silicon wafer, the third deep trouth is located at the subsequent region two sides that form beam,
And extend along the length direction in the subsequent region that form beam, and one end is connected with second deep trouth；
6) the second oxide layer is formed in the side and bottom of the first oxidation layer surface and the third deep trouth；
7) beam is discharged using reactive ion etching process and anisotropic wet corrosive liquid.
2. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
Be characterized in that: the depth of first deep trouth formed in step 2) meets following relational expression:
hlt=H-hb-δ
In formula, hltFor the depth of first deep trouth, H is the thickness of described (111) silicon wafer, hbFor the thickness of subsequent beam to be formed
Degree, δ is safe clearance.
3. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
Be characterized in that: the width of second deep trouth formed in step 3) meets following relational expression:
wdt≤wlt-2ε
In formula, wdtFor the width of second deep trouth, wltFor the width of first deep trouth, ε is positive reflective quarter alignment error.
4. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
It is characterized in that: in step 4), using thermal oxidation technology in (111) silicon chip surface, first deep trouth and second depth
First oxide layer is formed on slot side and bottom.
5. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
Be characterized in that: the length direction of the third deep trouth formed in step 5) is along<112>crystal orientation；The depth etc. of the third deep trouth
In the thickness of subsequent beam to be formed, the length of the third deep trouth is equal to the length of subsequent beam to be formed, wants positioned at subsequent
The interval width for forming the third deep trouth of the region two sides of beam is equal to the width of subsequent beam to be formed；Shape is wanted positioned at subsequent
The interval width of the third deep trouth of the region two sides of Cheng Liang and the length of the third deep trouth meet following relational expression:
In formula, w1For positioned at the interval width of the third deep trouth of the subsequent region two sides that form beam, L1It is deep for the third
The length of slot.
6. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
It is characterized in that: in step 6), using thermal oxidation technology in the first oxidation layer surface and the side and bottom of the third deep trouth
Portion forms second oxide layer.
7. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
Be characterized in that: the thickness of second oxide layer is less than the thickness of first oxide layer.
8. beam-mass block structure preparation method according to claim 1 based on laser combination anisotropic etch,
It is characterized in that: in step 7), being included the following steps: using reactive ion etching process and anisotropic wet corrosive liquid release beam
71) second oxide layer of third deep trouth bottom is removed using reactive ion etching process；
72) (111) silicon wafer described in etching is continued from third deep trouth bottom using deep reaction ion etching technique；
73) (111) silicon described in the zonal corrosion of etching is continued from third deep trouth bottom using anisotropic wet corrosive liquid
Piece, so that being located at the regional connectivity for continuing to etch from third deep trouth bottom of the subsequent region two sides that form beam one
It rises, to ensure that beam is completely released.
9. beam-mass block structure preparation method according to claim 8 based on laser combination anisotropic etch,
Be characterized in that: in step 72), the depth for continuing etching from third deep trouth bottom meets following relational expression:
h2> H-hlt-hb
In formula, h2For the depth for continuing etching from third deep trouth bottom, H is the thickness of described (111) silicon wafer, hltIt is described
The depth of first deep trouth, hbFor the depth of the third deep trouth.
10. beam-mass block structure preparation method according to claim 8 based on laser combination anisotropic etch,
It is characterized by: the anisotropic wet corrosive liquid includes that potassium hydroxide solution or tetramethylammonium hydroxide are molten in step 73)
Liquid.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7180144B2 (en) * | 2002-03-05 | 2007-02-20 | Walsin Lihwa Corp. | Corner compensation method for fabricating MEMS and structure thereof |
| CN102190284A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | MEMS sensor and methods for manufacturing MEMS sensor, film, mass block and cantilever beam |
| CN103439032A (en) * | 2013-09-11 | 2013-12-11 | 中国电子科技集团公司第四十九研究所 | Processing method of silicon micro resonator |
| CN105181011A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof |
| CN105731360A (en) * | 2014-12-09 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | MEMS sensor and preparation method of MEMS sensor |
-
2015
- 2015-12-25 CN CN201510998013.7A patent/CN106915723B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7180144B2 (en) * | 2002-03-05 | 2007-02-20 | Walsin Lihwa Corp. | Corner compensation method for fabricating MEMS and structure thereof |
| CN102190284A (en) * | 2010-03-11 | 2011-09-21 | 苏州敏芯微电子技术有限公司 | MEMS sensor and methods for manufacturing MEMS sensor, film, mass block and cantilever beam |
| CN103439032A (en) * | 2013-09-11 | 2013-12-11 | 中国电子科技集团公司第四十九研究所 | Processing method of silicon micro resonator |
| CN105731360A (en) * | 2014-12-09 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | MEMS sensor and preparation method of MEMS sensor |
| CN105181011A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof |
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