CN105181011A - Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof - Google Patents
Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a pressure and acceleration two-in-one sensor of a packaging structure and a preparation method thereof. One end of a cantilever beam is fixed to the back side of a silicon wafer, and the other end is suspended. A mass block is arranged on the suspended end of the cantilever beam. The cantilever beam is disposed on the bottom of a first concave area, and the first concave area is communicated with a corresponding first groove on an upper cover plate. Multiple acceleration piezoresistive strips and pressure piezoresistive strips are prepared by doping on the front side of the silicon wafer. The acceleration piezoresistive strips are arranged on the cantilever beam and/or the mass block. A pressure sensing film is formed between the bottom of a second concave area and the pressure piezoresistive strips, and a second groove directly faces the pressure piezoresistive strips. An insulating layer covers the front side of the silicon wafer. A metal lead is arranged on the insulating layer, and connects the piezoresistive strips. By employing a secondary mask etching technology, both an acceleration sensor and a pressure sensor can be made at the same time in the same MEMS chip, and the degree of chip integration of the traditional tire pressure sensor is improved.
Description
Technical field
The present invention relates to a kind of MEMS sensor chip, in particular a kind of pressure, the two-in-one sensor of acceleration and preparation method thereof of encapsulating structure.
Background technology
Automobile tire pressure monitoring system (English abbreviation TPMS), is mainly used in Real-Time Monitoring tire pressure in vehicle traveling process, and to having a flat tire, infrabar and super pressure report to the police, with guarantee driving safety.According to statistics, the traffic hazard occurred on a highway about has 70% to be cause owing to blowing out.Preventing from blowing out is an important topic of safe driving, and the tyre pressure maintained the standard travels and Timeliness coverage tire leaks gas is the key preventing from blowing out.TPMS is a kind of desirable solution.
Tire pressure sensor chip (hereinafter referred to as tyre pressure sensor) is the core of whole TPMS system, mainly comprises the monitoring pressure transducer of tyre inner pressure and the acceleration transducer as trigger switch.Tyre pressure sensor combines peripheral circuit, MCU processor, RF radio-frequency module, and tyre inner pressure signal wireless just can be realized to be transferred to display terminal, allows driver can the pressure condition of real time inspection tire, and gives the alarm when exception occurs tire pressure.Tyre pressure sensor specific works process is: when tire is static, and without the need to carrying out tire pressure monitoring, pressure transducer is in closed condition; When tire starts to rotate, acceleration transducer detects the centrifugal acceleration of tire, will send signal and by MCU, pressure transducer be opened, and pressure transducer detects tire pressure in real time and data are transferred to display terminal by RF chip.
At present, had the technology of some tyre pressure sensors to produce in China, the representative patents corresponding to its product has: (1) Chinese invention patent CN200910053308.1, surface transverse fluctuation mode tire pressure sensor; (2) Chinese utility model patent CN201420199177.4, tyre pressure sensor; (3) Chinese invention patent CN201010534154.0, external automobile tire pressure sensor; (4) Chinese utility model patent CN201120269839.7, tyre pressure sensor; (5) Chinese utility model patent CN201320326069.4, a kind of tyre pressure sensor; (6) Chinese invention patent CN201110185860.3, composite integrated sensor structure and manufacture method thereof.Its Patent (1), the tyre pressure sensor that (2) and (3) are introduced only comprises pressure transducer, and not as the acceleration transducer of trigger switch.The integral module of tire pressure sensor-based system is then introduced in patent (4) and (5), comprises sensor, transmitter module, treatment circuit, MCU etc., and does not deeply introduce wherein as the sensor chip technology of core.Patent (6) then describes the two-in-one integrated MEMS chip of a kind of pressure, acceleration transducer and method for making, this chip can be used for tire pressure and detects, but this patent does not relate to the wafer-level package of sensor, all sensing arrangements are all exposed to chip upper surface, make it be difficult to bear the mal-condition of doughnut, thus reliability is poor.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of pressure of encapsulating structure, the two-in-one sensor of acceleration and preparation method thereof, pressure transducer and acceleration transducer are integrated on a sensor chip.
The present invention is achieved by the following technical solutions, the present invention includes upper cover plate, lower cover, silicon chip, semi-girder, mass, multiple pressure drag bar, insulation course, metal lead wire, middle layer;
Described upper cover plate is offered the first groove and the second groove, the reverse side of described silicon chip offers the first depressed area and the second depressed area respectively, one end of described semi-girder is fixed on the reverse side of silicon chip, the other end is unsettled, described mass is arranged on the free end of semi-girder, described semi-girder is positioned at the bottom of the first depressed area, and the first depressed area is communicated with the first groove corresponding on upper cover plate; Adulterate obtained multiple acceleration pressure drag bar and pressure pressure drag bar respectively for the front of described silicon chip, described acceleration pressure drag bar is arranged on semi-girder and/or mass, mineralization pressure sense film between the bottom of described second depressed area and pressure pressure drag bar, the second groove is just to pressure pressure drag bar; Described insulation course covers the front of silicon chip, and metal lead wire is arranged on insulation course, and metal lead wire is communicated with each pressure drag bar respectively; Described upper cover plate is by the front of Intermediate Layer Bonding at silicon chip, and described lower cover is bonded in the reverse side of silicon chip, and described lower cover just offers gas port to the one side of pressure sensitive film.
The contact area of described pressure drag bar and metal lead wire is provided with heavily doped region by heavy doping.
Described pressure pressure drag bar forms Hui Sitong full bridge structure, and described acceleration pressure drag bar forms Hui Sitong full bridge structure.
A preparation method for the two-in-one sensor of the pressure of encapsulating structure, acceleration, comprises the following steps:
(1) a slice substrate monocrystal silicon chip is prepared;
(2) doping process is utilized to form pressure drag bar, ohmic contact regions and heavily doped region at front side of silicon wafer;
(3) in the reverse side deposition dielectric layers of silicon chip, a layer insulating is deposited in the front of silicon chip, graphical and etch electricity contact hole on the insulation course of front side of silicon wafer;
(4) on the insulation course of front side of silicon wafer, deposit metal level, and by etching by metallic layer graphic, draw metal lead wire, metal lead wire is formed with pressure drag bar by the electricity contact hole of insulation course and is electrically connected;
(5) carry out graphical and etching successively to the insulation course of silicon chip reverse side, respectively as the mask of first time with corrosion for the second time, outermost insulation course is as the mask of second time corrosion, and the insulation course of internal layer is as the mask corroded for the first time;
(6) by wet corrosion technique, first time corrosion is carried out to silicon chip, anisotropic etch is carried out to silicon chip, obtained first depressed area and the second depressed area;
(7) etching technics is passed through, using the outermost insulation course of silicon chip reverse side as the insulation course of mask etching nexine, make the corrosion window of nexine insulation course and outer insulation completely the same, form second time etching mask, then second time anisotropic etch is carried out, the final structure forming mass and semi-girder on acceleration transducer, and the pressure sensitive membrane structure that on pressure transducer, formation one is smooth;
(8) utilize etching technics, remove the dielectric layers of silicon chip reverse side;
(9) at the reverse side bonding lower cover of silicon chip;
(10) utilize graphical and etching technics, mass and semi-girder etching are discharged;
(11) at the front depositing inter-layer of silicon chip, then bonding upper cover plate on the intermediate layer.
Described patterning process is selected from any one in photoetching process, focused-ion-beam lithography, laser scanning etching technics.
Described doping process is selected from any one in ion implantation doping, painting source diffusing, doping.In described step (3), the depositing operation of insulation course is selected from any one in oxidation, low-pressure chemical vapor deposition, plasma reinforced chemical vapour deposition, sputter deposition craft, sol gel process, organic material coating curing process; Any one in the material selection silicon dioxide of deposition, silicon nitride, silicon dioxide and silicon nitride composite membrane, organic film, the thickness range of obtained insulation course is 1nm ~ 100 μm.
In described step (4), the depositing operation of metal level is selected from any one in sputtering sedimentation, electron-beam evaporation, heating evaporation deposition, electroplating deposition, electroless deposition, chemogenic deposit, and the thickness range of the metal level deposited is 1nm ~ 100 μm.
Insulation mask etching technique in described step (3), (5), (7), (8) is selected from any one in dry ionic etching, XeF, HF gas attack, wet anisotropic burn into wet method isotropic etch, focused-ion-beam lithography, laser ablation.
Etching process in described step (6), (7) is selected from any one in KOH solution corrosion, TMAH solution corrosion.
The present invention is made in pressure transducer and acceleration transducer on single sensor chip, and utilizes MEMS micro Process mass preparation technology to make sensor, not only increases the integrated level of tyre pressure sensor, and can also realize cost degradation, high finished product rate etc.; Adopt distinctive sandwich encapsulating structure, the Vacuum Package of chip-scale can not only be realized, and all acceleration, pressure sensing structure can also be protected not by the impact of outside rugged surroundings, there are very high reliability and stability.
The present invention has the following advantages compared to existing technology: the present invention utilizes secondary mask method etching process technology, realizes producing acceleration transducer and pressure transducer in same MEMS chip simultaneously, improves the chip integration of traditional tyre pressure sensor; The single-crystal silicon device layer between upper and lower cover plate centering is utilized to carry out bonding; thus form the encapsulating structure of sandwich; so not only ensure that the vacuum tightness of device inside; but also farthest protection is realized to the sensing arrangement of device inside, circuit structure; thus make device still can keep high reliability and stability in the middle of the rugged environments such as high temperature, high pressure, many dirt, corrosive gas, be applicable to the application scenario of monitoring automobile tyre pressure completely.
Accompanying drawing explanation
Fig. 1 is front view figure of the present invention;
Fig. 2 is cut-open view of the present invention;
Fig. 3 is the equivalent circuit diagram of favour stone full-bridge of the present invention;
Fig. 4 is process chart of the present invention.
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 4, the present embodiment comprises the following steps:
(1) a slice substrate monocrystal silicon chip 1 is prepared;
(2) doping process is utilized to form pressure drag bar 8, ohmic contact regions and heavily doped region in silicon chip 1 front;
(3) in the reverse side deposition dielectric layers 9 of silicon chip 1, a layer insulating 9 is deposited in the front of silicon chip 1, graphical and etch electricity contact hole on the insulation course 9 in silicon chip 1 front;
(4) on the insulation course 9 in silicon chip 1 front, deposit metal level, and by etching by metallic layer graphic, draw metal lead wire 10, metal lead wire 10 is formed with pressure drag bar 8 by the electricity contact hole of insulation course 9 and is electrically connected;
(5) carry out graphical and etching successively to the insulation course 9 of silicon chip 1 reverse side, respectively as the mask of first time with corrosion for the second time, outermost insulation course 9 is as the mask of second time corrosion, and the insulation course 9 of internal layer is as the mask corroded for the first time;
(6) by wet corrosion technique, first time corrosion is carried out to silicon chip 1, anisotropic etch is carried out to silicon chip 1, obtained first depressed area and the second depressed area;
(7) etching technics is passed through, using the outermost insulation course 9 of silicon chip 1 reverse side as the insulation course 9 of mask etching nexine, make the corrosion window of nexine insulation course 9 and outer insulation 9 completely the same, form second time etching mask, then second time anisotropic etch is carried out, the final structure forming mass 4 and semi-girder 5 on acceleration transducer, and pressure sensitive film 6 structure that on pressure transducer, formation one is smooth;
(8) utilize etching technics, remove the dielectric layers 9 of silicon chip 1 reverse side;
(9) at the reverse side bonding lower cover 3 of silicon chip 1;
(10) utilize graphical and etching technics, mass 4 and semi-girder 5 etching are discharged;
(11) at the front depositing inter-layer of silicon chip 1, then bonding upper cover plate 2 on the intermediate layer.
In the present embodiment, patterning process is photoetching process, can select any one in focused-ion-beam lithography, laser scanning etching technics in other embodiments.
The doping process of the present embodiment is ion implantation doping, can select painting source doping in other embodiments.
In the step (3) of the present embodiment, the depositing operation of insulation course 9 is low-pressure chemical vapor deposition, and plasma reinforced chemical vapour deposition, sputter deposition craft, sol gel process, organic material can be selected in other embodiments to apply any one in curing process; Any one in the material selection silicon dioxide of deposition, silicon nitride, silicon dioxide and silicon nitride composite membrane, organic film, the thickness range of obtained insulation course 9 is 1nm ~ 100 μm.
In the step (4) of the present embodiment, the depositing operation of metal level is sputtering sedimentation, can select any one in electron-beam evaporation, heating evaporation deposition, electroplating deposition, electroless deposition, chemogenic deposit in other embodiments, the thickness range of the metal level deposited is 1nm ~ 100 μm.
Insulation mask etching technique in the step (3) of the present embodiment, (5), (7), (8) is dry ionic etching, can select any one in XeF, HF gas attack, wet anisotropic burn into wet method isotropic etch, focused-ion-beam lithography, laser ablation in other embodiments.
Etching process in the step (6) of the present embodiment, (7) is KOH solution corrosion, can select TMAH solution corrosion in other embodiments.
Bonding technology mentioned in the step (9) of the present embodiment, (11) is silicon silicon thermal bonding, can select the bonding techniques between the various different materials such as painting source bonding, organic gel bonding, inter-metallic bond, glass paste bonding in other embodiments.
Lithographic technique in the step (10) of the present embodiment can be ion coupling reflection ion etching (ICP), can select the various lithographic techniques to single crystal silicon material such as reactive ion etching (RIE), ion beam etching, XeF gaseous corrosion, wet etching in other embodiments.
In the step (11) of the present embodiment, the middle layer of bonding is indefinite form silicon, can select in other embodiments that polysilicon, silicon dioxide, silicon nitride, organic film, metal film, glass paste etc. are various can as the film of bonding material, and thickness can be 1nm ~ 100 μm.
The present invention is made in pressure transducer and acceleration transducer on single sensor chip, and utilizes MEMS micro Process mass preparation technology to make sensor, not only increases the integrated level of tyre pressure sensor, and can also realize cost degradation, high finished product rate etc.; Adopt distinctive sandwich encapsulating structure, the Vacuum Package of chip-scale can not only be realized, and all acceleration, pressure sensing structure can also be protected not by the impact of outside rugged surroundings, there are very high reliability and stability.
As depicted in figs. 1 and 2, the present embodiment comprises upper cover plate 2, lower cover 3, silicon chip 1, semi-girder 5, mass 4, multiple pressure drag bar 8, insulation course 9, metal lead wire 10, middle layer 12; Described upper cover plate 2 is offered the first groove and the second groove, the reverse side of described silicon chip 1 offers the first depressed area and the second depressed area respectively, one end of described semi-girder 5 is fixed on the reverse side of silicon chip 1, the other end is unsettled, described mass 4 is arranged on the free end of semi-girder 5, described semi-girder 5 is positioned at the bottom of the first depressed area, and the first depressed area is communicated with the first groove corresponding on upper cover plate 2; Adulterate obtained multiple acceleration pressure drag bar 8 and pressure pressure drag bar 8 respectively for the front of described silicon chip 1, described acceleration pressure drag bar 8 is arranged on semi-girder 5 and/or mass 4, between the bottom of described second depressed area and pressure pressure drag bar 8, mineralization pressure sense film 6, second groove is just to pressure pressure drag bar 8; Described insulation course 9 covers the front of silicon chip 1, and metal lead wire 10 is arranged on insulation course 9, and metal lead wire 10 is communicated with each pressure drag bar 8 respectively; Described upper cover plate 2 is bonded in the front of silicon chip 1 by middle layer 12, described lower cover 3 is bonded in the reverse side of silicon chip 1, and described lower cover 3 just offers gas port 7 to the one side of pressure sensitive film 6.The contact area of pressure drag bar 8 and metal lead wire 10 is provided with heavily doped region 11 by heavy doping.Pressure pressure drag bar 8 forms Hui Sitong full bridge structure, and described acceleration pressure drag bar 8 forms Hui Sitong full bridge structure.
As shown in Figure 3, when external pressure by gas port 7 be passed to pressure sensitive film 6 or mass 4 cause it that deformation occurs time, Wheatstone bridge produces unbalance voltage, and is exported by metal lead wire 10, thus realizes pressure sensing.Four pressure drag bars 8 are interconnected to constitute Wheatstone bridge by wire ,-V
dDand+V
dDfor input voltage source ,+V
outand-V
outbe output voltage signal.
The electrode be made up of contact conductor several outside upper cover plate 2, on monocrystalline silicon piece 1, the electric signal for whole sensing chip inputs, exports.
Acceleration transducer and pressure transducer are all utilize the piezoresistive effect ultimate principle of single crystal silicon material to carry out work.In acceleration transducer, the effect that mass 4 is subject to acceleration makes semi-girder 5 bend, and the bending stress of semi-girder 5 is returned and caused the resistance value of pressure drag bar 8 above to change, thus produces electrical signal output.The degree that semi-girder 5 is bending is higher, and the stress of generation is larger, and the change in resistance of pressure drag bar 8 is more obvious.Therefore the resistance of pressure drag bar 8 just directly can reflect the size of acceleration.In pressure sensor, outside gaseous tension is applied on pressure sensitive film 6 by gas introducing port.Because the upper surface of pressure sensitive film 6 is in vacuum, therefore can there is arching upward upwards in pressure sensitive film 6.With acceleration transducer in like manner, the stress that pressure sensitive film 6 upper surface produces can cause the resistance of pressure drag bar 8 to change, thus produces the electrical signal corresponding with external pressure size.In the actual motion of whole tyre pressure sensor, in order to save energy consumption, pressure transducer is generally in dormant state, also namely exports without electric signal.Once doughnut rotates, its centrifugal acceleration produced can be responded to by degree of being accelerated sensor, thus by Single Chip Microcomputer (SCM) program activation pressure sensor, makes its output pressure signal.This mechanism make whole tyre pressure sensor only tyre in operation time monitoring tire pressure, energy-conservation and effectively.
The present invention adopts secondary mask method etching process and sandwich bonding packaging structure, thus solves the subject matter in above-mentioned traditional tyre pressure sensor, effectively improves the stability of tyre pressure sensor, reliability and integrated level.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. pressure, the two-in-one sensor of acceleration of encapsulating structure, is characterized in that, comprises upper cover plate, lower cover, silicon chip, semi-girder, mass, multiple pressure drag bar, insulation course, metal lead wire, middle layer;
Described upper cover plate is offered the first groove and the second groove, the reverse side of described silicon chip offers the first depressed area and the second depressed area respectively, one end of described semi-girder is fixed on the reverse side of silicon chip, the other end is unsettled, described mass is arranged on the free end of semi-girder, described semi-girder is positioned at the bottom of the first depressed area, and the first depressed area is communicated with the first groove corresponding on upper cover plate; Adulterate obtained multiple acceleration pressure drag bar and pressure pressure drag bar respectively for the front of described silicon chip, described acceleration pressure drag bar is arranged on semi-girder and/or mass, mineralization pressure sense film between the bottom of described second depressed area and pressure pressure drag bar, the second groove is just to pressure pressure drag bar; Described insulation course covers the front of silicon chip, and metal lead wire is arranged on insulation course, and metal lead wire is communicated with each pressure drag bar respectively; Described upper cover plate is by the front of Intermediate Layer Bonding at silicon chip, and described lower cover is bonded in the reverse side of silicon chip, and described lower cover just offers gas port to the one side of pressure sensitive film.
2. pressure, the two-in-one sensor of acceleration of a kind of encapsulating structure according to claim 1, it is characterized in that, the contact area of described pressure drag bar and metal lead wire is provided with heavily doped region by heavy doping.
3. pressure, the two-in-one sensor of acceleration of a kind of encapsulating structure according to claim 1, is characterized in that, described pressure pressure drag bar forms Hui Sitong full bridge structure, and described acceleration pressure drag bar forms Hui Sitong full bridge structure.
4. the pressure of encapsulating structure as claimed in claim 1, a preparation method for the two-in-one sensor of acceleration, is characterized in that, comprise the following steps:
(1) a slice substrate monocrystal silicon chip is prepared;
(2) doping process is utilized to form pressure drag bar, ohmic contact regions and heavily doped region at front side of silicon wafer;
(3) in the reverse side deposition dielectric layers of silicon chip, a layer insulating is deposited in the front of silicon chip, graphical and etch electricity contact hole on the insulation course of front side of silicon wafer;
(4) on the insulation course of front side of silicon wafer, deposit metal level, and by etching by metallic layer graphic, draw metal lead wire, metal lead wire is formed with pressure drag bar by the electricity contact hole of insulation course and is electrically connected;
(5) carry out graphical and etching successively to the insulation course of silicon chip reverse side, respectively as the mask of first time with corrosion for the second time, outermost insulation course is as the mask of second time corrosion, and the insulation course of internal layer is as the mask corroded for the first time;
(6) by wet corrosion technique, first time corrosion is carried out to silicon chip, anisotropic etch is carried out to silicon chip, obtained first depressed area and the second depressed area;
(7) etching technics is passed through, using the outermost insulation course of silicon chip reverse side as the insulation course of mask etching nexine, make the corrosion window of nexine insulation course and outer insulation completely the same, form second time etching mask, then second time anisotropic etch is carried out, the final structure forming mass and semi-girder on acceleration transducer, and the pressure sensitive membrane structure that on pressure transducer, formation one is smooth;
(8) utilize etching technics, remove the dielectric layers of silicon chip reverse side;
(9) at the reverse side bonding lower cover of silicon chip;
(10) utilize graphical and etching technics, mass and semi-girder etching are discharged;
(11) at the front depositing inter-layer of silicon chip, then bonding upper cover plate on the intermediate layer.
5. the pressure of a kind of encapsulating structure according to claim 4, the preparation method of the two-in-one sensor of acceleration, it is characterized in that, described patterning process is selected from any one in photoetching process, focused-ion-beam lithography, laser scanning etching technics.
6. the pressure of a kind of encapsulating structure according to claim 4, the preparation method of the two-in-one sensor of acceleration, is characterized in that, described doping process is selected from any one in ion implantation doping, painting source diffusing, doping.
7. the pressure of a kind of encapsulating structure according to claim 4, the preparation method of the two-in-one sensor of acceleration, it is characterized in that, in described step (3), the depositing operation of insulation course is selected from any one in oxidation, low-pressure chemical vapor deposition, plasma reinforced chemical vapour deposition, sputter deposition craft, sol gel process, organic material coating curing process; Any one in the material selection silicon dioxide of deposition, silicon nitride, silicon dioxide and silicon nitride composite membrane, organic film, the thickness range of obtained insulation course is 1nm ~ 100 μm.
8. the pressure of a kind of encapsulating structure according to claim 4, the preparation method of the two-in-one sensor of acceleration, it is characterized in that, in described step (4), the depositing operation of metal level is selected from any one in sputtering sedimentation, electron-beam evaporation, heating evaporation deposition, electroplating deposition, electroless deposition, chemogenic deposit, and the thickness range of the metal level deposited is 1nm ~ 100 μm.
9. the pressure of a kind of encapsulating structure according to claim 4, the preparation method of the two-in-one sensor of acceleration, it is characterized in that, the insulation mask etching technique in described step (3), (5), (7), (8) is selected from any one in dry ionic etching, XeF, HF gas attack, wet anisotropic burn into wet method isotropic etch, focused-ion-beam lithography, laser ablation.
10. the pressure of a kind of encapsulating structure according to claim 4, the preparation method of the two-in-one sensor of acceleration, it is characterized in that, the etching process in described step (6), (7) is selected from any one in KOH solution corrosion, TMAH solution corrosion.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105783998A (en) * | 2016-04-15 | 2016-07-20 | 广东合微集成电路技术有限公司 | Composite sensor |
| CN106526232A (en) * | 2016-11-14 | 2017-03-22 | 广东合微集成电路技术有限公司 | Composite sensor and manufacture method thereof |
| CN106915723B (en) * | 2015-12-25 | 2019-02-22 | 中国科学院上海微***与信息技术研究所 | Beam-mass block structure preparation method based on laser combination anisotropic etch |
| CN110887977A (en) * | 2019-11-28 | 2020-03-17 | 上海应用技术大学 | Nanoscale piezoresistive acceleration sensor and preparation method thereof |
| CN111099556A (en) * | 2018-10-29 | 2020-05-05 | 上海途擎微电子有限公司 | MEMS sensor and preparation method thereof |
| CN115979500A (en) * | 2023-03-17 | 2023-04-18 | 成都凯天电子股份有限公司 | Double-air-pressure-cavity core body, pressure scanning valve and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1561724A1 (en) * | 2004-02-06 | 2005-08-10 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| CN102476786A (en) * | 2010-11-22 | 2012-05-30 | 中国科学院上海微***与信息技术研究所 | Single silicon chip integrated chip combining acceleration sensor and pressure sensor and manufacturing method of single silicon chip integrated chip |
| CN103674112A (en) * | 2013-12-05 | 2014-03-26 | 上海天沐自动化仪表有限公司 | Method for preparing integrated silicon piezoresistive type sensor chip preparing and sensor chip |
| CN103792036A (en) * | 2014-03-05 | 2014-05-14 | 中国电子科技集团公司第三十八研究所 | MEMS chip with air pressure sensor and acceleration sensor integrated and manufacturing method thereof |
| CN104089642A (en) * | 2014-06-13 | 2014-10-08 | 浙江工业大学 | Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor |
-
2015
- 2015-08-12 CN CN201510492727.0A patent/CN105181011A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1561724A1 (en) * | 2004-02-06 | 2005-08-10 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
| CN102476786A (en) * | 2010-11-22 | 2012-05-30 | 中国科学院上海微***与信息技术研究所 | Single silicon chip integrated chip combining acceleration sensor and pressure sensor and manufacturing method of single silicon chip integrated chip |
| CN103674112A (en) * | 2013-12-05 | 2014-03-26 | 上海天沐自动化仪表有限公司 | Method for preparing integrated silicon piezoresistive type sensor chip preparing and sensor chip |
| CN103792036A (en) * | 2014-03-05 | 2014-05-14 | 中国电子科技集团公司第三十八研究所 | MEMS chip with air pressure sensor and acceleration sensor integrated and manufacturing method thereof |
| CN104089642A (en) * | 2014-06-13 | 2014-10-08 | 浙江工业大学 | Piezoresistive acceleration and pressure integrated sensor and method for manufacturing piezoresistive acceleration and pressure integrated sensor |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106915723B (en) * | 2015-12-25 | 2019-02-22 | 中国科学院上海微***与信息技术研究所 | Beam-mass block structure preparation method based on laser combination anisotropic etch |
| CN105783998A (en) * | 2016-04-15 | 2016-07-20 | 广东合微集成电路技术有限公司 | Composite sensor |
| CN106526232A (en) * | 2016-11-14 | 2017-03-22 | 广东合微集成电路技术有限公司 | Composite sensor and manufacture method thereof |
| CN111099556A (en) * | 2018-10-29 | 2020-05-05 | 上海途擎微电子有限公司 | MEMS sensor and preparation method thereof |
| CN110887977A (en) * | 2019-11-28 | 2020-03-17 | 上海应用技术大学 | Nanoscale piezoresistive acceleration sensor and preparation method thereof |
| CN110887977B (en) * | 2019-11-28 | 2021-12-07 | 上海应用技术大学 | Nanoscale piezoresistive acceleration sensor and preparation method thereof |
| CN115979500A (en) * | 2023-03-17 | 2023-04-18 | 成都凯天电子股份有限公司 | Double-air-pressure-cavity core body, pressure scanning valve and preparation method |
| CN115979500B (en) * | 2023-03-17 | 2023-06-13 | 成都凯天电子股份有限公司 | Double-air-pressure cavity core, pressure scanning valve and preparation method |
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