CN106816498A - A kind of method that mask layer is removed in solar cell metal grid lines preparation process - Google Patents
A kind of method that mask layer is removed in solar cell metal grid lines preparation process Download PDFInfo
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- CN106816498A CN106816498A CN201510872715.0A CN201510872715A CN106816498A CN 106816498 A CN106816498 A CN 106816498A CN 201510872715 A CN201510872715 A CN 201510872715A CN 106816498 A CN106816498 A CN 106816498A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000003384 imaging method Methods 0.000 claims abstract description 8
- 210000004027 cell Anatomy 0.000 claims description 39
- 238000003475 lamination Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 238000009713 electroplating Methods 0.000 claims description 9
- 229910052752 metalloid Inorganic materials 0.000 claims description 8
- 150000002738 metalloids Chemical class 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003637 basic solution Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910004156 TaNx Inorganic materials 0.000 claims description 2
- 229910010421 TiNx Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- AIMMVWOEOZMVMS-UHFFFAOYSA-N cyclopropanecarboxamide Chemical compound NC(=O)C1CC1 AIMMVWOEOZMVMS-UHFFFAOYSA-N 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 94
- 239000010408 film Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Life Sciences & Earth Sciences (AREA)
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Abstract
A kind of method the invention discloses mask layer is removed in solar cell metal grid lines preparation process, including step is as follows：In the face deposition intrinsic amorphous silicon layer of n-type silicon substrate one and N-shaped amorphous silicon layer, another side deposition intrinsic amorphous silicon layer and p-type amorphous silicon layer, and transparent conductive oxide film is deposited on N-shaped amorphous silicon layer and p-type amorphous silicon layer, deposit barrier layer on the including transparent conducting oxide layer；The deposited seed layer on the barrier layer；One layer of mask layer is covered on the seed layer, by mask layer by forming metal grid lines pattern after exposure imaging；Using plating mode, electro-coppering, electrotinning are carried out to area of the pattern, form metal grid lines；Cell piece is carried by frock, into striping room, the mask layer outside removal grid line subsequently enters etching chamber, the Seed Layer of its covering position of erosion removal and barrier layer, exposes battery surface.
Description
Technical field
A kind of method the present invention relates to remove mask layer in area of solar cell, more particularly to solar cell metal grid lines preparation process.
Background technology
Heterojunction solar battery is the solar cell that thin amorphous silicon layer is grown on silicon substrate, with simple structure, technological temperature be low, high conversion efficiency, the characteristics of good temp characteristic, one of high-efficiency battery of large-scale promotion application is suitable for, with good development prospect.
By taking n-type silicon substrate as an example, the primary structure of heterojunction solar battery as shown in Figure 1 is：Priority deposition film intrinsic amorphous silicon layer and P-type non-crystalline silicon emitter layer on n-type silicon substrate smooth surface, form the PN heterojunction with film intrinsic amorphous silicon interlayer；Transparent conductive oxide film is deposited with sputtering method on the thin amorphous silicon layer of two faces doping, finally metal electrode of the grating is formed in transparent conductive oxide film.
Current to make metal electrode of the grating, conventional method is：Electroplated by frock, cell piece is taken out from frock, be transferred to and photoresistance film is removed in horizontal plants, being then transferred to " the cell piece gaily decorated basket ", to carry out erosion removal metal laminated.This process, because cell piece need to be shifted repeatedly, cell piece thin and fragile, therefore often there is cell piece rupture in production process.
The content of the invention
Regarding to the issue above, the invention provides a kind of method that mask layer is removed in solar cell metal grid lines preparation process, in solving production process, because cell piece is repeatedly shifted and caused by cell piece rupture.
In order to solve the above technical problems, the technical solution adopted in the present invention is：A kind of method that mask layer is removed in solar cell metal grid lines preparation process, including step is as follows：In the face deposition intrinsic amorphous silicon layer of n-type silicon substrate one and N-shaped amorphous silicon layer, another side deposition intrinsic amorphous silicon layer and p-type amorphous silicon layer, and transparent conductive oxide film is deposited on N-shaped amorphous silicon layer and p-type amorphous silicon layer, deposit barrier layer on the including transparent conducting oxide layer；The deposited seed layer on the barrier layer；One layer of mask layer is covered on the seed layer, by mask layer by forming metal grid lines pattern after exposure imaging；Wherein methods described also includes removal mask layer step：Solar cell is fitted into frock, Seed Layer is exposed in metal grid lines pattern, in Seed Layer electroplating surface grid line lamination, frock is moved into removal photosensitive dry film room after completing plating grid line lamination, mask layer is removed, etching chamber is then moved to, Seed Layer and the barrier layer of its covering position are removed with chemical corrosion liquid, expose battery surface.
Preferably, described remove mask layer sprays NaOH or potassium hydroxide basic solution using to solar cell surface.
Preferably, the mask layer is the photosensitive dry film of photoresist.
Preferably, the barrier layer is Ti metalloids layer, Ta metalloids layer, and the Ti metalloids layer is Ti, TiNx metal level, TiW metal levels, and the Ta metalloids layer is Ta, TaNx metal level, and its thickness is between 1-50nm.
Preferably, the Seed Layer is the one kind in copper seed layer, nickel Seed Layer, silver-colored Seed Layer, aluminium Seed Layer, is generated using PVD sputtering methods, vapour deposition method or chemical-electrical plating method, and its thickness is between 10-1000nm.
Preferably, the grid line lamination is made up of the first grid line lamination, the second grid line lamination；The first grid line lamination is copper electroplating layer, and used as metal grid lines host conductive layer, its thickness is between 5-40um；Second grid line lamination is plating tin layers, and used as the protective layer for helping layer and copper lamination of metal grid lines, its thickness is between 1-20um.
It is preferably, described that by mask layer, by being formed after exposure imaging, metal grid lines pattern includes making grid line pattern using patch dry film, exposure, development or silk-screen printing makes grid line pattern.
From the above-mentioned description of this invention, compared to the prior art, the invention has the advantages that：Process is carried out continuously, and without cell piece is taken out from frock, reduce cell piece picks and places number of times to removal mask layer, greatly reduces cell piece fragmentation.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, and schematic description and description of the invention is used to explain the present invention, does not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is the structural representation of n-type silicon substrate heterojunction solar battery；
Fig. 2 is the schematic flow sheet of making metal electrode of the grating of the invention；
Fig. 3 is the structural representation behind deposition intrinsic layer of the present invention, amorphous thin Film layers, conductive oxide layer, barrier layer；
Fig. 4 is that mask layer of the present invention forms the structural representation after metal grid lines pattern after overexposure, development；
Fig. 5 is domain schematic diagram of the present invention after Seed Layer electroplating surface grid line lamination；
Fig. 6 is the structural representation after present invention removal mask layer；
Fig. 7 be erosion removal of the present invention it is metal laminated after metal grid lines structural representation.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with drawings and Examples, the present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
The method that mask layer is removed in a kind of solar cell metal grid lines preparation process of the present invention, including step is as follows：In the face deposition intrinsic amorphous silicon layer of n-type silicon substrate one and N-shaped amorphous silicon layer, another side deposition intrinsic amorphous silicon layer and p-type amorphous silicon layer, and transparent conductive oxide film is deposited on N-shaped amorphous silicon layer and p-type amorphous silicon layer, deposit barrier layer on the including transparent conducting oxide layer；The deposited seed layer on the barrier layer；One layer of mask layer is covered on the seed layer, by mask layer by forming metal grid lines pattern after exposure imaging；Using plating mode, electro-coppering, electrotinning are carried out to area of the pattern, form metal grid lines；Cell piece is carried by frock, into striping room, the mask layer outside removal grid line subsequently enters etching chamber, the Seed Layer of its covering position of erosion removal and barrier layer, exposes battery surface.
It is illustrated in figure 2 the schematic flow sheet of making metal electrode of the grating of the invention, cell piece 12 is fitted into frock 13, frock 13 carries cell piece 12 and carries out striping into spray striping room 14, the carrying cell piece 12 of frock 13 is rinsed into rinsing room 15 after having removed mask layer, frock 13 is carried into cell piece 12 after flushing and enters etching chamber 16, Seed Layer and the barrier layer of its covering position are removed with chemical corrosion liquid, battery surface is exposed, frock 13 finally is carried into cell piece 12 is rinsed into rinsing room 15 is again introduced into.The present invention carries out electro-coppering into electroplating chamber entrainment of solar battery sheet by frock and electrotinning is processed, striping room is entered back into, stripping solution is sprayed in striping room equipped with spray stripping solution device by cell piece surface, photoresistance film is departed from battery surface, complete to remove mask layer；Rinsed well after processing；Into etching chamber, etching chamber is equipped with etching solution, in frock entrainment cell piece immersion etching solution, after etching removal is metal laminated, is rinsed well with clear water and dried up.
In specific embodiment, comprise the following steps：
Step 1,By corroding in the face deposition intrinsic amorphous silicon layer 2 of n-type silicon substrate 1 one through parlkaline or acid solution and making N-shaped amorphous silicon layer 3 using CVD,Another side deposition intrinsic amorphous silicon layer 2 and p-type amorphous silicon layer 4,Wherein the surface reflectivity of n-type silicon substrate 1 is less than 5% in 300-1100nm wave-length coverages,PVD sputtering methods are used again,Transparent conductive oxide film 5 is deposited on N-shaped amorphous silicon layer 3 and p-type amorphous silicon layer 4,Wherein transparent conductive oxide film 5 uses ITO (tin indium oxide) layer,Or the indium oxide layer of other elements doping,Its characteristic is material of the light by 100 nano thickness,Its transmitance is at least greater than 90%,The resistivity of transparent conductive oxide film 5 is generally less than 3.5 × 10-4ohm-cm,Between its thickness 50-120nm,Barrier layer 6 is deposited on including transparent conducting oxide layer 5 by PVD sputtering methods；Using Ti metalloids layer, its thickness is between 1-50nm on barrier layer 6；Again by electroless plating or PVD sputtering methods on barrier layer 6 deposited seed layer 7 simultaneously, Seed Layer 7 is copper seed layer, its thickness between 10-1000nm, as shown in Figure 3.
Step 2, in Seed Layer 7 overlying, one layer of mask layer 8, the mask layer 8 is photoresist photosensitive dry film, then by mask layer 8 by forming metal grid lines pattern 9 after exposure imaging, as shown in Figure 4.It is described that by mask layer 8, by being formed after exposure imaging, metal grid lines pattern 9 includes making grid line pattern using patch dry film, exposure, development or silk-screen printing makes grid line pattern.
Step 3, solar cell is fitted into frock, Seed Layer 7 is exposed in metal grid lines pattern 9, then in the electroplating surface grid line lamination of Seed Layer 7.Wherein grid line lamination is made up of the first grid line lamination 10 and the second grid line lamination 11, and the first grid line lamination 10 is copper electroplating layer, and used as metal grid lines host conductive layer, its thickness is between 5-40um；Second grid line lamination 11 is plating tin layers, as the protective layer for helping layer and copper electroplating layer of metal grid lines, its thickness between 1-20um, as shown in Figure 5.
Frock is moved to removal photosensitive dry film room by step 4, electricity after completing plating grid line lamination, mask layer 8 is removed, as shown in Figure 6.Described remove mask layer 8 sprays NaOH or potassium hydroxide basic solution using to solar cell surface.
Step 5, again by remove mask layer 8 after solar cell move to etching chamber, Seed Layer 7 and the barrier layer 6 of its covering position are removed with chemical corrosion liquid, expose battery surface.So far, whole grid line completes, last battery slice surface metal grid line, as shown in Figure 7.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, all any modification, equivalent and improvement made within the spirit and principles in the present invention etc. should be included within the scope of the present invention.
Claims (7)
1. a kind of method that mask layer is removed in solar cell metal grid lines preparation process, it is characterised in that：
It is as follows including step：
In the face deposition intrinsic amorphous silicon layer of n-type silicon substrate one and N-shaped amorphous silicon layer, another side deposition is originally
Amorphous silicon layer and p-type amorphous silicon layer are levied, and is deposited on N-shaped amorphous silicon layer and p-type amorphous silicon layer saturating
Bright conductive oxide film, barrier layer is deposited on the including transparent conducting oxide layer；In the stop
Deposited seed layer on layer；One layer of mask layer is covered on the seed layer, by mask layer by shape after exposure imaging
Into metal grid lines pattern；Wherein methods described also includes removal mask layer step：Solar cell is filled
Enter in frock, Seed Layer is exposed in metal grid lines pattern, in Seed Layer electroplating surface grid line lamination,
Frock is moved into removal photosensitive dry film room after completing plating grid line lamination, mask layer is removed, then moved to
Etching chamber, Seed Layer and the barrier layer of its covering position are removed with chemical corrosion liquid, expose battery table
Face.
2. the side of mask layer is removed in solar cell metal grid lines preparation process according to claim 1
Method, it is characterised in that：Described remove mask layer sprays NaOH using to solar cell surface
Or potassium hydroxide basic solution.
3. the side of mask layer is removed in solar cell metal grid lines preparation process according to claim 1
Method, it is characterised in that：The mask layer is the photosensitive dry film of photoresist.
4. the side of mask layer is removed in solar cell metal grid lines preparation process according to claim 1
Method, it is characterised in that：The barrier layer is Ti metalloids layer, Ta metalloids layer, the Ti eka-golds
Category layer is Ti, TiNx metal level, TiW metal levels, and the Ta metalloids layer is Ta, TaNx metal
Layer, its thickness is between 1-50nm.
5. the side of mask layer is removed in solar cell metal grid lines preparation process according to claim 1
Method, it is characterised in that：The Seed Layer is copper seed layer, nickel Seed Layer, silver-colored Seed Layer, aluminium seed
One kind in layer, is generated using PVD sputtering methods, vapour deposition method or chemical-electrical plating method, and its thickness exists
Between 10-1000nm.
6. the side of mask layer is removed in solar cell metal grid lines preparation process according to claim 1
Method, it is characterised in that：The grid line lamination is made up of the first grid line lamination, the second grid line lamination；Institute
The first grid line lamination is stated for copper electroplating layer, used as metal grid lines host conductive layer, its thickness is in 5-40um
Between；Second grid line lamination is plating tin layers, used as the protection for helping layer and copper lamination of metal grid lines
Layer, its thickness is between 1-20um.
7. the side of mask layer is removed in solar cell metal grid lines preparation process according to claim 1
Method, it is characterised in that：It is described to include adopting by forming metal grid lines pattern after exposure imaging by mask layer
Grid line pattern is made with patch dry film, exposure, development or silk-screen printing makes grid line pattern.
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| CN201510872715.0A CN106816498A (en) | 2015-12-02 | 2015-12-02 | A kind of method that mask layer is removed in solar cell metal grid lines preparation process |
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Cited By (12)
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| CN109148614A (en) * | 2017-06-16 | 2019-01-04 | 国家电投集团科学技术研究院有限公司 | Silicon heterojunction solar battery and preparation method thereof |
| CN110931600A (en) * | 2019-11-16 | 2020-03-27 | 江西昌大高新能源材料技术有限公司 | Preparation method of HACL solar cell |
| CN113394303A (en) * | 2021-05-20 | 2021-09-14 | 无锡爱尔华光电科技有限公司 | Solar cell electrode manufacturing method |
| CN113488549A (en) * | 2021-07-07 | 2021-10-08 | 安徽华晟新能源科技有限公司 | Preparation method of heterojunction solar cell |
| CN113937188A (en) * | 2021-09-28 | 2022-01-14 | 中国华能集团清洁能源技术研究院有限公司 | Method for manufacturing zigzag grid line |
| CN113943955A (en) * | 2021-11-26 | 2022-01-18 | 苏州昶明微电子科技合伙企业(有限合伙) | Copper electroplating equipment and method |
| CN114361297A (en) * | 2022-02-11 | 2022-04-15 | 安徽华晟新能源科技有限公司 | Preparation method of solar cell |
| CN114695592A (en) * | 2020-12-30 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Method for reducing solar cell lobe damage, solar cell and preparation method |
| CN115498050A (en) * | 2022-09-23 | 2022-12-20 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN115799399A (en) * | 2022-12-22 | 2023-03-14 | 通威太阳能（成都）有限公司 | Preparation method of solar cell |
| WO2023071168A1 (en) * | 2021-10-26 | 2023-05-04 | 西安隆基乐叶光伏科技有限公司 | Solar cell and preparation method therefor |
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| WO2024045807A1 (en) * | 2022-08-29 | 2024-03-07 | 通威太阳能（成都）有限公司 | Solar cell and manufacturing process therefor |
| CN115498050A (en) * | 2022-09-23 | 2022-12-20 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN115498050B (en) * | 2022-09-23 | 2024-03-29 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN115799399A (en) * | 2022-12-22 | 2023-03-14 | 通威太阳能（成都）有限公司 | Preparation method of solar cell |
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