CN106816498A - 一种太阳能电池金属栅线制备过程中去除掩膜层的方法 - Google Patents
一种太阳能电池金属栅线制备过程中去除掩膜层的方法 Download PDFInfo
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Abstract
本发明公开了一种太阳能电池金属栅线制备过程中去除掩膜层的方法,包括步骤如下:在n型硅衬底一面沉积本征非晶硅层及n型非晶硅层,另一面沉积本征非晶硅层及p型非晶硅层,并在n型非晶硅层和p型非晶硅层上沉积透明导电氧化物薄膜,在所述透明导电氧化物层上沉积阻挡层;在所述阻挡层上沉积种子层;在种子层上覆一层掩膜层,将掩膜层经过曝光显影后形成金属栅线图案;采用电镀方式,对图案区域进行电镀铜、电镀锡,形成金属栅线;通过工装携带电池片,进入去膜室,去除栅线外的掩膜层,接着进入蚀刻室,腐蚀去除其覆盖位置的种子层和阻挡层,暴露出电池表面。
Description
技术领域
本发明涉及太阳能电池领域,尤其涉及一种太阳能电池金属栅线制备过程中去除掩膜层的方法。
背景技术
异质结太阳能电池是硅衬底上生长非晶硅薄层的太阳能电池,具有结构简单、工艺温度低、转换效率高,温度特性好的特点,是适合于大规模推广应用的高效电池之一,具有很好的发展前景。
以n型硅衬底为例,如图1所示异质结太阳能电池的主要结构为:在n型硅衬底受光面上先后沉积薄膜本征非晶硅层及P型非晶硅发射极层,形成带有薄膜本征非晶硅夹层的异质PN结;在俩面掺杂的非晶硅薄层上用溅射法沉积透明导电氧化物薄膜,最后在透明导电氧化物薄膜形成栅状金属电极。
当前制作栅状金属电极,常规方法是:借助工装进行电镀,将电池片从工装上取出,转移到水平设备上进行去除光阻膜,再转移到“电池片花篮”进行腐蚀去除金属叠层。此过程,由于电池片需多次转移,电池片薄且脆,因此生产过程中常发生电池片破裂。
发明内容
针对上述问题,本发明提供了一种太阳能电池金属栅线制备过程中去除掩膜层的方法,解决了生产过程中,因电池片多次转移而造成的电池片破裂。
为解决上述技术问题,本发明所采用的技术方案是:一种太阳能电池金属栅线制备过程中去除掩膜层的方法,包括步骤如下:在n型硅衬底一面沉积本征非晶硅层及n型非晶硅层,另一面沉积本征非晶硅层及p型非晶硅层,并在n型非晶硅层和p型非晶硅层上沉积透明导电氧化物薄膜,在所述透明导电氧化物层上沉积阻挡层;在所述阻挡层上沉积种子层;在种子层上覆一层掩膜层,将掩膜层经过曝光显影后形成金属栅线图案;其中所述方法还包括去除掩膜层步骤:将太阳能电池装入工装中,在金属栅线图案中暴露出种子层,在种子层表面电镀栅线叠层,完成电镀栅线叠层后将工装移至去除感光干膜室,将掩膜层去除,再移至蚀刻室,用化学腐蚀液去除其覆盖位置的种子层和阻挡层,暴露出电池表面。
优选的,所述将掩膜层去除采用对太阳能电池表面喷淋氢氧化钠或氢氧化钾碱性溶液。
优选的,所述掩膜层为光阻材料的感光干膜。
优选的,所述阻挡层为Ti类金属层、Ta类金属层,所述Ti类金属层为Ti、TiNx金属层、TiW金属层,所述Ta类金属层为Ta、TaNx金属层,其厚度在1-50nm之间。
优选的,所述种子层为铜种子层、镍种子层、银种子层、铝种子层中的一种,采用PVD溅射法、蒸镀法或化学电镀法生成,其厚度在10-1000nm之间。
优选的,所述栅线叠层由第一栅线叠层、第二栅线叠层组成;所述第一栅线叠层为电镀铜层,作为金属栅线主体导电层,其厚度在5-40um之间;第二栅线叠层为电镀锡层,作为金属栅线的助焊层和铜叠层的保护层,其 厚度在1-20um之间。
优选的,所述将掩膜层经过曝光显影后形成金属栅线图案包括采用贴干膜、曝光、显影制作栅线图案或丝网印刷制作栅线图案。
由上述对本发明的描述可知,和现有技术相比,本发明具有如下优点:过程连续进行,去除掩膜层无需将电池片从工装中取出,减少了电池片的取放次数,大大降低了电池片破片。
附图说明
构成本申请的一部分的附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:
图1为n型硅衬底异质结太阳能电池的结构示意图;
图2为本发明的制作栅状金属电极的流程示意图;
图3为本发明沉积本征层、非晶硅薄膜层、导电氧化物层、阻挡层后的结构示意图;
图4为本发明掩膜层经过曝光、显影后形成金属栅线图案后的结构示意图;
图5为本发明在种子层表面电镀栅线叠层后的结构域示意图;
图6为本发明去除掩膜层后的结构示意图;
图7为本发明腐蚀去除金属叠层后的金属栅线结构示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图 及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
本发明一种太阳能电池金属栅线制备过程中去除掩膜层的方法,包括步骤如下:在n型硅衬底一面沉积本征非晶硅层及n型非晶硅层,另一面沉积本征非晶硅层及p型非晶硅层,并在n型非晶硅层和p型非晶硅层上沉积透明导电氧化物薄膜,在所述透明导电氧化物层上沉积阻挡层;在所述阻挡层上沉积种子层;在种子层上覆一层掩膜层,将掩膜层经过曝光显影后形成金属栅线图案;采用电镀方式,对图案区域进行电镀铜、电镀锡,形成金属栅线;通过工装携带电池片,进入去膜室,去除栅线外的掩膜层,接着进入蚀刻室,腐蚀去除其覆盖位置的种子层和阻挡层,暴露出电池表面。
如图2所示为本发明的制作栅状金属电极的流程示意图,电池片12装入工装13中,工装13携带电池片12进入喷淋去膜室14进行去膜,去除完掩膜层后工装13携带电池片12进入漂洗室15进行冲洗,冲洗后将工装13携带电池片12进入蚀刻室16,用化学腐蚀液去除其覆盖位置的种子层和阻挡层,暴露出电池表面,最后将工装13携带电池片12进入再次进入漂洗室15进行冲洗。本发明通过工装夹带着太阳能电池片进入电镀室进行电镀铜和电镀锡加工,再进入去膜室,去膜室装有喷淋去膜溶液装置,通过对电池片表面喷洒去膜溶液,使光阻膜脱离电池表面,完成移除掩膜层;加工后冲洗干净;进入蚀刻室,蚀刻室装有蚀刻溶液,工装夹带电池片浸入蚀刻溶液中,蚀刻去除金属叠层后,用清水冲洗干净并吹干。
具体实施例中,包括以下步骤:
步骤1、通过在经过碱性或酸性溶液腐蚀在n型硅衬底1一面沉积本征非晶硅层2及采用CVD法制作n型非晶硅层3,另一面沉积本征非晶硅层2及p型非晶硅层4,其中n型硅衬底1的表面反射率在300-1100nm波长范围内小于5%,再采用PVD溅射法,在n型非晶硅层3和p型非晶硅层4上沉积透明导电氧化物薄膜5,其中透明导电氧化物薄膜5采用ITO(氧化铟锡)层,或者其他元素掺杂的氧化铟层,其特性是光通过100纳米厚度的材料,其透过率至少要大于90%,透明导电氧化物薄膜5的电阻率通常要小于3.5×10-4ohm-cm,其厚度50-120nm之间,通过PVD溅射法在透明导电氧化物层5上沉积阻挡层6;阻挡层6采用Ti类金属层,其厚度在1-50nm之间;再通过化学电镀或者PVD溅射法在阻挡层6上同时沉积种子层7,种子层7为铜种子层,其厚度在10-1000nm之间,如图3所示。
步骤2、在种子层7上覆一层掩膜层8,所述掩膜层8为光阻材料感光干膜,然后将掩膜层8经过曝光显影后形成金属栅线图案9,如图4所示。所述将掩膜层8经过曝光显影后形成金属栅线图案9包括采用贴干膜、曝光、显影制作栅线图案或丝网印刷制作栅线图案。
步骤3、将太阳能电池装入工装中,在金属栅线图案9中暴露出种子层7,然后在种子层7表面电镀栅线叠层。其中栅线叠层由第一栅线叠层10和第二栅线叠层11组成,所述第一栅线叠层10为电镀铜层,作为金属栅线主体导电层,其厚度在5-40um之间;第二栅线叠层11为电镀锡层,作为金属栅线的助焊层和电镀铜层的保护层,其厚度在1-20um之间,如图5所示。
步骤4、电完成电镀栅线叠层后将工装移至去除感光干膜室,将掩膜层 8去除,如图6所示。所述将掩膜层8去除采用对太阳能电池表面喷淋氢氧化钠或氢氧化钾碱性溶液。
步骤5、再将去除掩膜层8后的太阳能电池移至蚀刻室,用化学腐蚀液去除其覆盖位置的种子层7和阻挡层6,暴露出电池表面。至此,整个栅线的制作完成,最后电池片表面金属栅线,如图7所示。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。
Claims (7)
1.一种太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:包括步骤如下:
在n型硅衬底一面沉积本征非晶硅层及n型非晶硅层,另一面沉积本征非晶硅层及p型非晶硅层,并在n型非晶硅层和p型非晶硅层上沉积透明导电氧化物薄膜,在所述透明导电氧化物层上沉积阻挡层;在所述阻挡层上沉积种子层;在种子层上覆一层掩膜层,将掩膜层经过曝光显影后形成金属栅线图案;其中所述方法还包括去除掩膜层步骤:将太阳能电池装入工装中,在金属栅线图案中暴露出种子层,在种子层表面电镀栅线叠层,完成电镀栅线叠层后将工装移至去除感光干膜室,将掩膜层去除,再移至蚀刻室,用化学腐蚀液去除其覆盖位置的种子层和阻挡层,暴露出电池表面。
2.根据权利要求1所述太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:所述将掩膜层去除采用对太阳能电池表面喷淋氢氧化钠或氢氧化钾碱性溶液。
3.根据权利要求1所述太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:所述掩膜层为光阻材料的感光干膜。
4.根据权利要求1所述太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:所述阻挡层为Ti类金属层、Ta类金属层,所述Ti类金属层为Ti、TiNx金属层、TiW金属层,所述Ta类金属层为Ta、TaNx金属层,其厚度在1-50nm之间。
5.根据权利要求1所述太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:所述种子层为铜种子层、镍种子层、银种子层、铝种子层中的一种,采用PVD溅射法、蒸镀法或化学电镀法生成,其厚度在10-1000nm之间。
6.根据权利要求1所述太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:所述栅线叠层由第一栅线叠层、第二栅线叠层组成;所述第一栅线叠层为电镀铜层,作为金属栅线主体导电层,其厚度在5-40um之间;第二栅线叠层为电镀锡层,作为金属栅线的助焊层和铜叠层的保护层,其厚度在1-20um之间。
7.根据权利要求1所述太阳能电池金属栅线制备过程中去除掩膜层的方法,其特征在于:所述将掩膜层经过曝光显影后形成金属栅线图案包括采用贴干膜、曝光、显影制作栅线图案或丝网印刷制作栅线图案。
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109148614A (zh) * | 2017-06-16 | 2019-01-04 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池及其制备方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020113236A1 (en) * | 2000-09-09 | 2002-08-22 | Lg Philips Lcd Co., Ltd. | Thin film transistor and fabrication method thereof |
CN103137791A (zh) * | 2013-03-13 | 2013-06-05 | 中国科学院上海微***与信息技术研究所 | 湿法沉积和低温热处理相结合制备异质结太阳电池方法 |
CN104701410A (zh) * | 2013-12-10 | 2015-06-10 | 泉州市博泰半导体科技有限公司 | 一种硅基异质结电池片上金属栅线的制作方法 |
CN104810428A (zh) * | 2014-01-25 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种用于制作硅基异质结电池片时结合层的处理方法 |
-
2015
- 2015-12-02 CN CN201510872715.0A patent/CN106816498A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020113236A1 (en) * | 2000-09-09 | 2002-08-22 | Lg Philips Lcd Co., Ltd. | Thin film transistor and fabrication method thereof |
CN103137791A (zh) * | 2013-03-13 | 2013-06-05 | 中国科学院上海微***与信息技术研究所 | 湿法沉积和低温热处理相结合制备异质结太阳电池方法 |
CN104701410A (zh) * | 2013-12-10 | 2015-06-10 | 泉州市博泰半导体科技有限公司 | 一种硅基异质结电池片上金属栅线的制作方法 |
CN104810428A (zh) * | 2014-01-25 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | 一种用于制作硅基异质结电池片时结合层的处理方法 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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