CN106783897B - A kind of wide spectrum flexible infrared detector array and preparation method thereof - Google Patents
A kind of wide spectrum flexible infrared detector array and preparation method thereof Download PDFInfo
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- CN106783897B CN106783897B CN201710018828.3A CN201710018828A CN106783897B CN 106783897 B CN106783897 B CN 106783897B CN 201710018828 A CN201710018828 A CN 201710018828A CN 106783897 B CN106783897 B CN 106783897B
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- 238000001228 spectrum Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title description 4
- 239000010409 thin film Substances 0.000 claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
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- 239000004743 Polypropylene Substances 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
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- 229910021389 graphene Inorganic materials 0.000 description 3
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- 239000002033 PVDF binder Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
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- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 229920000131 polyvinylidene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of wide spectrum flexible infrared detector arrays, including flexible substrate layer, supporting silicon chip layer and the sensitive thin film layer set gradually from the bottom up；The upper and lower surfaces of sensitive thin film layer have one layer of metallic film as upper and lower electrode respectively, and the overlapping region of upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer is released electric polymer by flexible thermal and is constituted；The production method of above-mentioned wide spectrum flexible infrared detector array is also disclosed simultaneously.Structure of the invention can plastic deformation, its deflection can be adjusted as needed, and so as to adjust its visual range, and sensitive thin film has very wide spectral response range, detecting light spectrum range is larger, therefore the imaging effect that the infrared detector based on this array has higher quality, details richer.
Description
Technical field
The present invention relates to infrared detectors, belong to micro-electronic mechanical skill field, it is more particularly related to a kind of
Wide spectrum flexible infrared detector array and preparation method thereof.
Background technique
Infrared detector (Infrared Detector) is that incident infrared radiation signal is transformed into what electric signal exported
Device.Infra-red radiation is electromagnetic wave of the wavelength between visible light and microwave, and human eye is detectable.Discover this radiation
In the presence of and measure its power, it is necessary to it is transformed into other physical quantitys that can be discovered and measure.It is, in general, that infra-red radiation shines
Any effect caused by object is penetrated, as long as effect can measure and sensitive enough, can be used to measure the strong of infra-red radiation
It is weak.Mainly thermo-effect of infrared radiation and the photoelectric effect that modern infrared detector is utilized.The output of these effects is mostly electricity,
Or method appropriate can be used to be transformed into electricity.
Electronic component flexibility is a main trend of future electronic technology development, is especially produced to emerging Intelligent hardware
Industry has liberated us to product form using flexible screen, flexible printed circuit board as the flexible electronic component of representative
Imagination has overturned the form and experience mode of existing product.
Equally, for infrared detector field, current infrared detector array is all based on semiconductor temperature-sensitive or photosensitive
Material is process, and structural rigidity, shape immobilizes；Meanwhile the detectable spectral region based on these materials is smaller, generally
For near-infrared, middle infra-red range, and the far infrared partial radiation that nature object is emitted wastes, if these are wasted
The infra-red radiation fallen uses, then the axis information of thermal infrared imager is richer, and image quality will further increase.
Summary of the invention
Based on the above technical problem, the present invention provides a kind of wide spectrum flexible infrared detector arrays, to solve
Previous infrared detector structure is fixed, can not adjust form and visual range, the lesser technical problem of detecting light spectrum range
In order to solve the above technical problems, The technical solution adopted by the invention is as follows:
A kind of wide spectrum flexible infrared detector array, including set gradually from the bottom up flexible substrate layer, support silicon
Lamella and sensitive thin film layer；
Wherein,
The upper and lower surfaces of sensitive thin film layer have one layer of metallic film as upper and lower electrode, the overlapping of upper and lower electrode respectively
Region constitutes effective sensing unit；
The sensitive thin film layer is released electric polymer by flexible thermal and is constituted.
Preferably, the flexible thermal releases electric polymer and is Kynoar, Kynoar-hexafluoropropene, gathers inclined difluoro
Ethylene-trifluoroethylene, odd nylons, polyvinyl chloride or polypropylene.
Preferably, the flexible thermal is released electric polymer and is aoxidized doped with inorganic piezoelectric ceramics, inorganic piezoelectric crystal, metal
One of object, carbon nanotube, graphene are a variety of.
Preferably, the sensitive thin film layer uses and is cast casting, hot pressing, is coated with or electrostatic spraying mode forms a film.
Preferably, the flexible substrate layer, supporting silicon chip layer and sensitive thin film layer are all made of bonding mode connection.
Preferably, the metallic film is aluminium film.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are: structure of the invention flexible can become
Shape can adjust its deflection as needed, and so as to adjust its visual range, and sensitive thin film has very wide spectral response model
It encloses, detecting light spectrum range is larger, therefore the imaging effect that the infrared detector based on this array has higher quality, details richer
Fruit.
Meanwhile the present invention also provides the production methods of above-mentioned wide spectrum flexible infrared detector array, including following step
It is rapid:
1) flexible thermal released into electric polymer sufficiently dissolve and form solution, solution be coated on polishing substrate and high-temperature baking extremely
Solvent volatilizees completely forms sensitive thin film, forms sensitive thin film layer after sensitive thin film removing；
2) sensitive thin film layer upper and lower surfaces deposit the metallic film of same thickness using magnetron sputtering mode, are formed upper and lower
The overlapping region of electrode, upper and lower electrode constitutes effective sensing unit；
3) sensitive thin film layer opens up the through-hole that lower electrode is led to sensitive thin film layer upper surface, and metal is filled in through-hole and is schemed
Shape；
4) thin silicon wafer identical with sensitive thin film level product and shape is chosen, and prepares strip through-hole in thin silicon wafer；
5) sensitive thin film layer is glued in thin silicon wafer, with effective sensing unit and strip through-hole center be correspondingly arranged for
It is quasi-；
6) thin silicon wafer is corroded using anisotropic etch mode by the support column arrangement to form separation, constitutes supporting silicon chip
Layer；
7) supporting silicon chip layer is glued in flexible substrate layer, is completed the production.
Production method of the invention is easy to operate, with different levels can prepare each array structure and form array, and is quick
It is uniform to feel thin film layer thickness, upper and lower thickness of electrode is certain and controllable, and effective sensing unit and strip through-hole center are correspondingly arranged also
Improve effective pixel of array.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the structural schematic diagram of sensitive thin film of the present invention；
Fig. 3 is the front view of sensitive thin film of the present invention；
Fig. 4 is the rear view of sensitive thin film of the present invention；
Fig. 5 is the through-hole schematic diagram of sensitive thin film of the present invention；
Fig. 6 is the structural schematic diagram of thin silicon wafer of the present invention；
Fig. 7 is the fitting schematic diagram of thin silicon wafer of the present invention and sensitive thin film；
Fig. 8 is the structural schematic diagram of supporting silicon chip layer of the present invention；
Marked in the figure: 1, flexible substrate layer；2, supporting silicon chip layer；3, sensitive thin film layer.
Specific embodiment
The present invention will be further described below with reference to the drawings.Embodiments of the present invention include but is not limited to following reality
Apply example.
A kind of wide spectrum flexible infrared detector array as shown in Figure 1, including the flexible liner set gradually from the bottom up
Bottom 1, supporting silicon chip layer 2 and sensitive thin film layer 3；Wherein, the upper and lower surfaces of sensitive thin film layer 3 have one layer of metallic film respectively
As upper and lower electrode, the overlapping region of upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer 3 is by flexible pyroelectricity
Polymer is constituted.
The flexible substrate layer 1, supporting silicon chip layer 2 and sensitive thin film layer 3 of the present embodiment can plastic deformation, so as to basis
Need to adjust its deflection and visual range, and sensitive thin film layer 3 is released electric polymer by flexible thermal and constituted, thus sensitive thin film
Layer 3 has very wide spectral response range and detecting light spectrum range, so as to improve the image quality and effect of infrared detector
Fruit, and axis information is more abundant.
Releasing electric polymer in the present embodiment flexible thermal is PVDF (Kynoar), PVDF-HFP (Kynoar-hexafluoro
Propylene), PVDF-TrFE (polyvinylidene fluoride-trifluoro-ethylene), odd nylons, in PVC (polyvinyl chloride) or PPP (polypropylene)
It is one or more.
In the present embodiment, the flexible thermal releases electric polymer doped with inorganic piezoelectric ceramics, inorganic piezoelectric crystal, metal
One of oxide, carbon nanotube, graphene are a variety of.Inorganic piezoelectric ceramics such as lead zirconate titanate, barium titanate, inorganic piezoelectric are brilliant
Body such as quartz, lithium tantalate, metal oxide such as titanium oxide, zinc oxide, carbon nanotube, graphene release electric polymer in flexible thermal
The performance that can be further improved material after middle addition increases its sensibility and intensity, damages after avoiding deformation.
The sensitive thin film layer 3 of the present embodiment uses and is cast casting, hot pressing, is coated with or electrostatic spraying mode forms a film.It is sensitive thin
Film layer 3 uses aforesaid way, it is ensured that its integral thickness is uniform, and controllable thickness size, the film of preparation can expire
Sufficient imaging requirements.
The flexible substrate layer 1, supporting silicon chip layer 2 and sensitive thin film layer 3 of the present embodiment are all made of bonding mode connection.Pass through
Bonding mode uses itself and does not impact convenient for array installation, debugging and maintenance.
The metallic film of the present embodiment is aluminium film.
Meanwhile the present embodiment additionally provides a kind of manufacturing method of wide spectrum flexible infrared detector array, including following
Step:
1) flexible thermal released into electric polymer sufficiently dissolve and form solution, solution be coated on polishing substrate and high-temperature baking extremely
Solvent volatilizees completely forms sensitive thin film, forms sensitive thin film layer 4 after sensitive thin film removing；
2) sensitive thin film layer upper and lower surfaces deposit the metallic film of same thickness using magnetron sputtering mode, are formed upper and lower
The overlapping region of electrode, upper and lower electrode constitutes effective sensing unit；
3) sensitive thin film layer opens up the through-hole that lower electrode is led to sensitive thin film layer upper surface, and metal is filled in through-hole and is schemed
Shape；The purpose of manufacture through-hole is to facilitate subsequent extraction electric signal to reading circuit；
4) thin silicon wafer identical with sensitive thin film level product and shape is chosen, and prepares strip through-hole in thin silicon wafer；It should
Thin silicon wafer plays a supporting role to sensitive thin film layer；
5) sensitive thin film layer is glued in thin silicon wafer, with effective sensing unit and strip through-hole center be correspondingly arranged for
It is quasi-；Sensitive thin film be bonded with the thin silicon wafer contraposition with strip through-hole, when fitting leads to every a line pixel center and bar shaped
The alignment of hole center.
6) thin silicon wafer is corroded using anisotropic etch mode by the support column arrangement to form separation, constitutes supporting silicon chip layer
2；
7) supporting silicon chip layer is glued in flexible substrate layer 1, is completed the production.
For the complete present invention, below with specific embodiment and specific structure, data and step is combined to do in detail the present invention
It describes in detail bright.
Specific embodiment
As shown in Figure 1, a kind of wide spectrum flexible infrared detector array, including the flexible substrate being successively glued from the bottom up
Layer, supporting silicon chip layer and sensitive thin film layer；Wherein, the upper and lower surfaces of sensitive thin film layer have one layer of metal aluminium film conduct respectively
The overlapping region of upper and lower electrode, upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer releases electropolymerization by flexible thermal
Object is constituted；It is Kynoar-hexafluoropropene that the flexible thermal, which releases electric polymer,；
The wide spectrum flexible infrared detector array of the present embodiment it is specific the production method is as follows:
1, PVDF (Kynoar) and PHFP (polyhexafluoropropylene) powder that mass ratio is 85:15 are mixed；It will mixing
Object is dissolved in dimethylformamide (DMF) solution, and solute and solvent quality ratio are 10:90；To which solution is applied after completely dissolution
It overlays on polished glass substrate, is then toasted at 110 DEG C；Film is removed into shape from glass substrate after solvent volatilizees completely
At Kynoar-hexafluoropropylene copolymer (PVDF-HFP) sensitive thin film, as shown in Figure 2；
2, using magnetron sputtering technique deposition thickness be respectively 50nm metallic aluminium as sensitive thin film top electrode and under
Electrode layer, and it is graphical to upper/lower electrode using photoetching or etching technics, and upper/lower electrode overlapping region is effective pixel, area
For 200 μm of 200 μ m, as a result as shown in Figure 3, Figure 4；
3, through-hole is formed on sensitive thin film surface using photoetching, oxygen plasma etching technics, it is heavy using magnetron sputtering technique
Product fills through-hole and graphical with a thickness of the metallic aluminium of 500nm, lower electrode is led to upper surface, as a result as shown in Figure 5；
4, using reduction process will wafer thinning identical with sensitive thin film area to 100 μm, formed thin silicon wafer；Again with
500nm thermal oxidation silicon is masking layer, forms strip through-hole using silicon isotropic etch technique, as a result as shown in Figure 6；
5, the contraposition of thin silicon wafer and sensitive thin film be bonded using epoxide-resin glue, when fitting make every a line pixel center and
The alignment of strip through-hole center, as a result as shown in Figure 7；
6, using 500nm thermal oxidation silicon as masking layer, use KOH (potassium hydroxide) for corrosive liquid, with anisotropic etch work
Skill by thin silicon wafer further corrode ingredient from support column arrangement, formed supporting silicon chip layer, as a result as shown in Figure 8；
7, supporting silicon chip layer is bonded in the polymethyl methacrylate (PMMA) with a thickness of 500 μm using epoxide-resin glue
Flexible substrate, so far technique is completed, and the array effect completed the process is as shown in Figure 1.
It is as described above the embodiment of the present invention.Described previously is each preferred embodiment of the invention, each preferred
Preferred embodiment in embodiment if not obvious contradictory or premised on a certain preferred embodiment, it is each preferably
Embodiment can arbitrarily stack combinations use, and the design parameter in the embodiment and embodiment is merely to understand table
State the invention verification process of inventor, the scope of patent protection being not intended to limit the invention, scope of patent protection of the invention
Still it is subject to the claims, it is all to change with equivalent structure made by specification and accompanying drawing content of the invention, together
Reason should be included within the scope of the present invention.
Claims (1)
1. a kind of production method of wide spectrum flexible infrared detector array, which comprises the following steps:
1) it flexible thermal is released into electric polymer sufficiently dissolves and form solution, solution is coated on polishing substrate and high-temperature baking is to solvent
Volatilization forms sensitive thin film completely, forms sensitive thin film layer after sensitive thin film removing；
2) sensitive thin film layer upper and lower surfaces deposit the metallic film of same thickness using magnetron sputtering mode, form upper and lower electricity
The overlapping region of pole, upper and lower electrode constitutes effective sensing unit；
3) sensitive thin film layer opens up the through-hole that lower electrode is led to sensitive thin film layer upper surface, filling metal and figure in through-hole
Change；
4) thin silicon wafer identical with sensitive thin film level product and shape is chosen, and prepares strip through-hole in thin silicon wafer；
5) sensitive thin film layer is glued in thin silicon wafer, effective sensing unit of being subject to is correspondingly arranged with strip through-hole center；
6) thin silicon wafer is corroded using anisotropic etch mode by the support column arrangement to form separation, constitutes supporting silicon chip layer；
7) supporting silicon chip layer is glued in flexible substrate layer, is completed the production.
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| CN107479760B (en) | 2017-09-22 | 2021-09-24 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display system |
| CN108871592B (en) * | 2018-05-08 | 2020-07-03 | 电子科技大学 | Flexible pyroelectric thermal infrared imager pixel array with low voltage and temperature interference |
| CN108645520B (en) * | 2018-05-08 | 2020-08-21 | 电子科技大学 | Flexible pyroelectric infrared detector sensitive unit with low-voltage electric interference |
| CN109921679B (en) * | 2019-03-08 | 2020-03-10 | 吉林大学 | Bionic flexible actuator with real-time feedback function and preparation method thereof |
| CN113432729A (en) * | 2021-06-21 | 2021-09-24 | 华南理工大学 | Flexible pyroelectric detector and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202534698U (en) * | 2012-03-19 | 2012-11-14 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room temperature infrared detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Non-refrigeration infrared imaging focal plane array detector |
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2017
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202534698U (en) * | 2012-03-19 | 2012-11-14 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room temperature infrared detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Non-refrigeration infrared imaging focal plane array detector |
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