CN102249176A - Micro electromechanical infrared imaging chip and manufacturing method thereof - Google Patents
Micro electromechanical infrared imaging chip and manufacturing method thereof Download PDFInfo
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- CN102249176A CN102249176A CN2011101294831A CN201110129483A CN102249176A CN 102249176 A CN102249176 A CN 102249176A CN 2011101294831 A CN2011101294831 A CN 2011101294831A CN 201110129483 A CN201110129483 A CN 201110129483A CN 102249176 A CN102249176 A CN 102249176A
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Abstract
The invention relates to a micro electromechanical infrared imaging chip. The micro electromechanical infrared imaging chip comprises a packaging shell, a wafer which is arranged in the packaging shell, and an infrared filter and is characterized in that: the wafer is formed by integrating a micro cantilever array layer and a micro-electronic circuit layer; and the packaging shell is formed by connecting a packaging outer shell and a packaging substrate through vacuum packaging and the infrared filter is fixed on the packaging shell and vacuum sealing is adopted by a joint part. Infrared radiation is subjected to high-sensitivity imaging according to a principle that the eigenvibration frequency of the mircro cantilever changes along with the temperature. From the structure, the data transmission speed in the chip is improved, the integrated level of the chip is improved, an external device and printed circuit board (PCB) space during use are saved, and the miniaturization of a final product is facilitated. A micro electromechanical part and a micro electronic part are both manufactured by the conventional semiconductor process, the process is simplified and manufacturing cost is reduced.
Description
Technical field
The present invention relates to a kind of infrared imaging chip, relate in particular to a kind of micro electronmechanical infrared imaging chip and manufacture method.
Background technology
For micro electronmechanical infrared imaging chip, after micro electronmechanical unit was subjected to infra-red radiation, the temperature of material or structure changed, thereby caused the variation of micro electronmechanical unit machine performance, obtained the signal of infra-red radiation and obtained infrared image with this.
CN 101229910A discloses a kind of infrared imaging focus plane array detector, and its core texture is the cantilever beam of one group of thermal deformation.During use, cantilever array one is carried out heat absorption in the face of infrared light, and another side reflects one group of parallel visible light, as shown in Figure 1.When cantilever beam is subjected to infra-red radiation and bends after the variations in temperature, correspondingly the visible light with parallel incident reflects away sideling and can't converge on the imageing sensor (as CCD), image to visible light carries out the inverse processing at last, obtains the image of infra-red radiation.The limitation of this infrared imaging method is partly to carry out the chip encapsulation to the focal plane arrays (FPA) that cantilever beam is formed, and needs to add many opticses in use, and it is integrated that whole system can't be carried out small size.In addition, in order to increase the amount of bow after micro mirror (or cantilever) is subjected to infra-red radiation, the size of micro mirror (or cantilever) can not be too small, and this has limited the spatial resolution of infrared imaging.
CN 101439841A discloses a kind of micro electronmechanical infrared image sensor, and each pixel cell in this sensor is made up of resilient suspension beam and infrared-sensitive resonant body, and wherein the material of hanging beam and resonance thin slice is silicon nitride or polysilicon.After pixel cell was subjected to infra-red radiation, the resonant frequency of resonant iris changed, thereby provided infrared radiation signal.There is the deficiency of two aspects in this method, and structures such as hanging beam, resonance thin slice need the way of series of physical and chemical vapour deposition (CVD) to obtain on the one hand, and manufacturing process is loaded down with trivial details relatively, and this has increased the manufacturing cost of chip inevitably; Microelectronic circuits such as resonance measurement and image processing are not integrated in this imageing sensor on the other hand, need add peripheral components such as phase-locked loop circuit and voltage controlled oscillator during use, this has limited the speed of transfer of data, and also this has increased the cost when using.
Summary of the invention
In order to remedy the shortcoming of prior art, the present invention discloses a kind of micro electronmechanical infrared imaging chip and manufacture method, utilizes micro-cantilever eigenvibration frequency to vary with temperature this principle and carries out infrared sensing and imaging.This chip is integrated is used for the micro mechanical structure of infrared sensing and is used for the microelectronic circuit of resonance measuring, adopts the MEMS and the manufacturing of CMOS standard technology of silicon materials to obtain.
The technical solution used in the present invention is: a kind of micro electronmechanical infrared imaging chip, comprise encapsulating shell, be built in the wafer and the infrared fileter of encapsulating shell, wafer is by the micro-cantilever array layer and the microelectronic circuit layer is integrated forms, encapsulating shell is connected to form by Vacuum Package and base plate for packaging by package casing, infrared fileter is fixed on the package casing, and joint adopts vacuum seal.
Described micro-cantilever array layer is made up of at least 64 micro-cantilever unit, described each micro-cantilever unit by cantilever, carriage, cover the metal level on the cantilever and the infrared absorption layer that covers on the metal level is formed, the length of described each micro-cantilever unit is 5 μ m ~ 200 μ m, and thickness is 50 nm ~ 400 nm.
Described cantilever is one or more in single anchor single armed, single anchor both arms, two anchor single armed or the two anchor both arms.
The part that each cantilever of described micro-cantilever array layer, carriage are continuous single piece of material.
Contain aluminium in the material of described metal level, metal layer thickness is 10 nm ~ 200 nm.
Described infrared absorption layer comprises that gold is black, silver is black, in carbon black, carbon nanotube powder or the graphene powder one or more.
Described infrared fileter is a bandpass filter, and the printing opacity wavelength is 3.5 μ m ~ 5 μ m or 8 μ m ~ 14 mu m wavebands.
Described microelectronic circuit layer comprises addressing electrode layer and measuring circuit layer, and described measuring circuit layer comprises addressing circuit, reference clock, phaselocked loop loop, memory cell and interface circuit.
The electrode of described addressing electrode layer matches with the micro-cantilever unit of micro-cantilever array layer, and each addressing electrode is positioned at the position of each below, micro-cantilever unit 5 μ m ~ 50 μ m.
Described micro-cantilever array layer is by part manufacturing individually, and low temperature is bonded on the residing wafer of microelectronic circuit layer then, finishes the manufacturing of entire wafer again.
Advantage of the present invention is: the present invention varies with temperature this principle with micro-cantilever eigenvibration frequency and realizes infrared imaging.Micromechanics layer and microelectronic layer all adopt the semiconductor technology of standard to make, and are integrated at last on the same wafer.Improve the data inside chips transmission speed from structure, improved the integrated level of chip, saved peripheral components and PCB space when using, helped the miniaturization of final products.Simplify technological process in the manufacturing greatly, reduced manufacturing cost.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 reads the structural representation that carries out infrared imaging for the micro-cantilever array focal plane with visible light.
Fig. 2 is a structural representation of the present invention.
Fig. 3 is the partial schematic diagram of micro-cantilever array layer among the present invention.
Fig. 4 is the structural representation of single micro-cantilever unit.
Fig. 5 is the generalized section of micro-cantilever unit.
Fig. 6 is the cantilever enlarged diagram of single armed list anchor structure.
Fig. 7 is the cantilever enlarged diagram of both arms list anchor structure.
Fig. 8 is the cantilever enlarged diagram of the two anchor structures of single armed.
Fig. 9 is the cantilever enlarged diagram of the two anchor structures of both arms.
Figure 10 is the schematic diagram of micro-cantilever resonant excitation.
Figure 11 briefly schemes for manufacturing process, has provided the critical workflow that the embodiment chips is made.
(a) ~ (f) at length provided six flow processs that the embodiment chips is made among Figure 12.
Wherein: 1, infrared fileter, 2, package casing, 3, the micro-cantilever array layer, 4, the addressing electrode layer, 5, the measuring circuit layer, 6, the microelectronic circuit layer, 7, base plate for packaging, 8, the micro-cantilever unit, 9, cantilever, 10, carriage, 11, metal level, 12, infrared absorption layer, 13, single armed list anchor structure, 14, both arms list anchor structure, 15, the two anchor structures of single armed, 16, the two anchor structures of both arms, 17, single addressing electrode, 18, the SOI substrate, 19, hole after the etching, 20, the wafer substrates that contains the microelectronic circuit layer, 21, the cantilever thin layer, 22, metal level and infrared absorption layer, 23, for discharging the slit that cantilever etches.
The specific embodiment
In order to deepen the understanding of the present invention, the invention will be further described below in conjunction with embodiment and accompanying drawing, and this embodiment only is used to explain the present invention, does not constitute the qualification to protection domain of the present invention.
With reference to Fig. 2 to Fig. 9, a kind of micro electronmechanical infrared imaging chip, comprise encapsulating shell, be built in the wafer and the infrared fileter (1) of encapsulating shell, micro-cantilever array layer (3) and microelectronic circuit layer (6) that wafer is made up of 16384 micro-cantilever unit (8) are integrated, the pixel of a micro-cantilever unit (8) during corresponding to infrared imaging, each micro-cantilever unit (8) is by the cantilever (9) of single anchor single armed structure (13), carriage (10), the golden dark red outer absorbed layer (12) that covers metal level on the cantilever (11) and cover on the metal level is formed, the length of micro-cantilever unit (8) is 5 μ m, thickness is 100 nm, microelectronic circuit (6) layer comprises addressing electrode layer (4) and measuring circuit layer (5), measuring circuit layer (5) comprises addressing circuit, reference clock, the phaselocked loop loop, memory cell and interface circuit, the electrode of addressing electrode layer (4) matches with the micro-cantilever unit (8) of micro-cantilever array layer (3), the electrode of addressing electrode layer (4) is positioned at the distance of below, micro-cantilever unit (8) 10 μ m, encapsulating shell is connected to form by Vacuum Package by package casing (2) and base plate for packaging (7), infrared fileter (1) is fixed on the package casing (2), joint adopts vacuum seal, infrared fileter (1) is a bandpass filter, and the printing opacity wavelength is selected in more weak 8 μ m ~ 14 mu m wavebands of Atmospheric Absorption.
Manufacturing, structure and application to the disclosed chip of the present invention is described further below: to shown in Figure 12, behind a SOI silicon wafer (18) mask lithography, carve support cavity (19) with reactive ion etching with reference to Figure 10, the degree of depth of cavity is 10 μ m.Another SOI silicon wafer (20) adopts the CMOS technology of standard, produces addressing electrode layer (4) and microelectronic circuit layer (5).The figure of above-mentioned two wafers is alignd, make the electrode pair of each addressing electrode layer (4) answer a micro-cantilever unit, with two wafer press weldings together, the temperature of pressure welding is lower than 500 then
oC is to guarantee the reliable and stable of microelectronic integrated circuit.Silicon wafer (20) to cantilever design carries out mechanical reduction, reactive ion etching, deoxidation layer and polishing, and gained cantilever thin layer (21) thickness is 100 nm.Go up the titanium film of evaporation sputter 5 nm behind the mask lithography successively at cantilever thin layer (21), the black film of the gold that aluminium film that 30 nm are thick and 10 nm are thick.Carry out mask lithography and reactive ion etching again, etch slit (23) to discharge micro-cantilever.Be the Vacuum Package of tube core separation and chip at last.
After finishing encapsulation, need carry out the initialization of parameter to each the micro-cantilever unit (9) in the chip, although the micro-cantilever unit (9) on the micro-cantilever array layer (3) all is to obtain by identical technology manufacturing, but the eigenvibration frequency of each micro-cantilever unit (9) is also incomplete same, has 10% with interior difference.As shown in figure 10, during initialization, addressing circuit control phaselocked loop loop is loaded into pumping signal on the single addressing electrode (17) one by one, and mechanical resonance takes place excitation cantilever arm (9), record the eigenvibration frequency of this cantilever then, and these data are kept at memory cell.Change the temperature of chip environment of living in, the above-mentioned measurement of repeated rows obtains the eigenvibration frequency of cantilever (9) and the relation of operating temperature, equally also these parameters is kept in the memory cell of circuit.So just finished initialization procedure to cantilever array layer (3).
The eigenvibration frequency of micro-cantilever is about 50 MHz under the room temperature, and the temperature coefficient of eigenvibration frequency is-0.6 PPM, i.e. the every variation 1 of temperature
oC, the eigenvibration frequency reduces 3000 Hz.The phaselocked loop loop of common performance is 2 Hz to the frequency resolution of 50 MHz signals, so the temperature resolution of micro-cantilever is up to 0.7 m
oC is far above ordinary hot electric material 50 m
oThe temperature resolution of C.This high temperature of micro-cantilever is differentiated and has been determined the high sensitivity of imager chip to infrared signal.
During work, light is by behind the infrared fileter (1), the infrared light of 8 μ m ~ 14 mu m wavebands sees through and is radiated on the micro-cantilever array layer (3), above-mentioned infrared light is absorbed by the infrared absorption layer (12) on micro-cantilever unit (8), cantilever (9) temperature raises, and the eigenvibration frequency correspondingly changes.Micro-cantilever unit (8) is encouraged in addressing circuit control phaselocked loop loop in the microelectronic circuit layer one by one, obtains the eigenvibration frequency of cantilever (9).In conjunction with the initialization data in the memory cell, obtain the temperature of cantilever (9), this temperature is corresponding to the intensity of infra-red radiation.All micro-cantilever unit (8) in the array are carried out also just having obtained the infrared intensity of each pixel position, thereby having obtained infrared image after above-mentioned resonant excitation measures.
The present invention varies with temperature this principle with micro-cantilever eigenvibration frequency and realizes infrared imaging.Micromechanics layer and microelectronic layer all adopt the semiconductor technology of standard to make, and are integrated at last on the same wafer.Improve the data inside chips transmission speed from structure, improved the integrated level of chip, saved peripheral components and PCB space when using, helped the miniaturization of final products.Simplify technological process in the manufacturing greatly, reduced manufacturing cost.
Claims (9)
1. micro electronmechanical infrared imaging chip, comprise encapsulating shell, be built in the wafer and the infrared fileter of encapsulating shell, it is characterized in that, wafer is by the micro-cantilever array layer and the microelectronic circuit layer is integrated forms, encapsulating shell is connected to form by Vacuum Package and base plate for packaging by package casing, infrared fileter is fixed on the package casing, and joint adopts vacuum seal.
2. a kind of micro electronmechanical infrared imaging chip according to claim 1, it is characterized in that, described micro-cantilever array layer is made up of at least 64 micro-cantilever unit, described each micro-cantilever unit by cantilever, carriage, cover the metal level on the cantilever and the infrared absorption layer that covers on the metal level is formed, the length of described each micro-cantilever unit is 5 μ m～200 μ m, thickness is 50 nm ~ 400 nm, and described cantilever is one or more in single anchor single armed, single anchor both arms, two anchor single armed or the two anchor both arms.
3. a kind of micro electronmechanical infrared imaging chip according to claim 1 is characterized in that, the part that each cantilever of described micro-cantilever array layer, carriage are continuous single piece of material.
4. a kind of micro electronmechanical infrared imaging chip according to claim 2 is characterized in that, contains aluminium in the material of described metal level, and metal layer thickness is 10 nm ~ 200 nm.
5. a kind of micro electronmechanical infrared imaging chip according to claim 2 is characterized in that, described infrared absorption layer comprises that gold is black, silver is black, in carbon black, carbon nanotube powder or the graphene powder one or more.
6. a kind of micro electronmechanical infrared imaging chip according to claim 2 is characterized in that described infrared fileter is a bandpass filter, and the printing opacity wavelength is 3.5 μ m ~ 5 μ m or 8 μ m ~ 14 mu m wavebands.
7. a kind of micro electronmechanical infrared imaging chip according to claim 1, it is characterized in that, described microelectronic circuit layer comprises addressing electrode layer and measuring circuit layer, and described measuring circuit layer comprises addressing circuit, reference clock, phaselocked loop loop, memory cell and interface circuit.
8. according to claim 2 or the described a kind of micro electronmechanical infrared imaging chip of claim 6, it is characterized in that, the electrode of described addressing electrode layer matches with the micro-cantilever unit of micro-cantilever array layer, and each addressing electrode is positioned at the position of each below, micro-cantilever unit 5 μ m ~ 50 μ m.
9. method that is used to make a kind of micro electronmechanical infrared imaging chip according to claim 1, it is characterized in that, described micro-cantilever array layer is by part manufacturing individually, and low temperature is bonded on the residing wafer of microelectronic circuit layer then, finishes the manufacturing of entire wafer again.
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Cited By (7)
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| CN102680112A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Unit thermistor detector reading-out circuit manufactured in PCB (Printed Circuit Board) circuit manner |
| CN105393097A (en) * | 2013-07-22 | 2016-03-09 | 诺基亚技术有限公司 | An apparatus for sensing |
| CN108196333A (en) * | 2017-12-19 | 2018-06-22 | 湖南宏动光电有限公司 | A kind of preparation method of Multichannel narrow with filtered pixel array |
| CN109387291A (en) * | 2017-08-10 | 2019-02-26 | 霍尼韦尔国际公司 | Device and method for MEMS resonant sensor array |
| JP2022094275A (en) * | 2020-12-14 | 2022-06-24 | ツィンファ ユニバーシティ | Infrared detector and infrared imager |
| US11613469B2 (en) | 2020-12-14 | 2023-03-28 | Tsinghua University | Light absorber preform solution and method for making the same |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102680112A (en) * | 2012-05-09 | 2012-09-19 | 中国科学院上海技术物理研究所 | Unit thermistor detector reading-out circuit manufactured in PCB (Printed Circuit Board) circuit manner |
| CN105393097A (en) * | 2013-07-22 | 2016-03-09 | 诺基亚技术有限公司 | An apparatus for sensing |
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| CN109387291A (en) * | 2017-08-10 | 2019-02-26 | 霍尼韦尔国际公司 | Device and method for MEMS resonant sensor array |
| CN109387291B (en) * | 2017-08-10 | 2023-07-04 | 霍尼韦尔国际公司 | Apparatus and method for MEMS resonant sensor array |
| CN108196333A (en) * | 2017-12-19 | 2018-06-22 | 湖南宏动光电有限公司 | A kind of preparation method of Multichannel narrow with filtered pixel array |
| CN108196333B (en) * | 2017-12-19 | 2020-07-03 | 湖南宏动光电有限公司 | Preparation method of multi-channel narrow-band filtering pixel array |
| JP2022094275A (en) * | 2020-12-14 | 2022-06-24 | ツィンファ ユニバーシティ | Infrared detector and infrared imager |
| JP7205837B2 (en) | 2020-12-14 | 2023-01-17 | ツィンファ ユニバーシティ | Infrared detector and infrared imager |
| US11613469B2 (en) | 2020-12-14 | 2023-03-28 | Tsinghua University | Light absorber preform solution and method for making the same |
| US11649987B2 (en) | 2020-12-14 | 2023-05-16 | Tsinghua University | Solar heat collector and solar water heater |
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