CN106783897A - A kind of wide spectrum flexible infrared detector array and preparation method thereof - Google Patents
A kind of wide spectrum flexible infrared detector array and preparation method thereof Download PDFInfo
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- CN106783897A CN106783897A CN201710018828.3A CN201710018828A CN106783897A CN 106783897 A CN106783897 A CN 106783897A CN 201710018828 A CN201710018828 A CN 201710018828A CN 106783897 A CN106783897 A CN 106783897A
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
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- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- PQIOSYKVBBWRRI-UHFFFAOYSA-N methylphosphonyl difluoride Chemical group CP(F)(F)=O PQIOSYKVBBWRRI-UHFFFAOYSA-N 0.000 description 1
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- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of wide spectrum flexible infrared detector array, including flexible substrate layer, supporting silicon chip layer and the sensitive thin film layer for setting gradually from the bottom up；There is layer of metal film on the upper and lower surface of sensitive thin film layer as upper and lower electrode respectively, and the overlapping region of upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer is released electric polymer and is constituted by flexible thermal；The preparation method for also disclosing above-mentioned wide spectrum flexible infrared detector array simultaneously.Structure of the present invention can plastic deformation, its deflection can be as needed adjusted, so that its visual range is adjusted, and sensitive thin film has spectral response range very wide, detecting light spectrum scope is larger, therefore the Infrared Detectors based on this array has the more rich imaging effect of higher quality, details.
Description
Technical field
The present invention relates to Infrared Detectors, belong to micro-electronic mechanical skill field, it is more particularly related to a kind of
Wide spectrum flexible infrared detector array and preparation method thereof.
Background technology
Infrared Detectors (Infrared Detector) is that incident infrared radiation signal is transformed into electric signal output
Device.Infra-red radiation is electromagnetic wave of the wavelength between visible ray and microwave, and human eye is detectable.Discover this radiation
In the presence of and to measure its strong and weak, it is necessary to it is transformed into other physical quantitys that can be discovered and measure.It is, in general, that infra-red radiation shines
Any effect caused by object is penetrated, as long as effect can be measured and sensitive enough, can be used to measure the strong of infra-red radiation
It is weak.Mainly thermo-effect of infrared radiation and photoelectric effect that modern Infrared Detectors is utilized.The output of these effects is mostly electricity,
Or can use appropriate method to be transformed into electricity.
Electronic component flexibility is a main trend of future electronic technology development, and particularly emerging Intelligent hardware is produced
Industry, the flexible electronic component with flexible screen, flexible printed circuit board as representative, has liberated us to product form
Imagination, has overturned the form and experience mode of existing product.
Equally, for Infrared Detectors field, current infrared detector array is all based on semiconductor temperature-sensitive or photosensitive
Material is processed, and structural rigidity, shape immobilizes；Meanwhile, the detectable spectral region based on these materials is smaller, typically
It is near-infrared, middle infra-red range, and the far infrared partial radiation that nature object is launched is wasted, if these are wasted
The infra-red radiation for falling is used, then the axis information of thermal infrared imager is more rich, and image quality will be improved further.
The content of the invention
Based on above technical problem, the invention provides a kind of wide spectrum flexible infrared detector array, so as to solve
Conventional infrared detector structure is fixed, cannot adjust form and visual range, the less technical problem of detecting light spectrum scope
To solve above technical problem, the technical solution adopted by the present invention is as follows：
A kind of wide spectrum flexible infrared detector array, including flexible substrate layer, the support silicon for setting gradually from the bottom up
Lamella and sensitive thin film layer；
Wherein,
There is layer of metal film on the upper and lower surface of sensitive thin film layer as upper and lower electrode, the overlap of upper and lower electrode respectively
Region constitutes effective sensing unit；
The sensitive thin film layer is released electric polymer and is constituted by flexible thermal.
Preferably, it is Kynoar, Kynoar-hexafluoropropene, poly- inclined difluoro that the flexible thermal releases electric polymer
Ethylene-trifluoroethylene, odd nylonses, polyvinyl chloride or polypropylene.
Preferably, the flexible thermal releases electric polymer doped with inorganic piezoelectric ceramics, the oxidation of inorganic piezoelectric crystal, metal
One or more in thing, CNT, Graphene.
Preferably, the sensitive thin film layer uses curtain coating casting, hot pressing, is coated with or electrostatic spraying mode film forming.
Preferably, the flexible substrate layer, supporting silicon chip layer and sensitive thin film layer are connected using bonding mode.
Preferably, the metallic film is aluminium film.
In sum, by adopting the above-described technical solution, the beneficial effects of the invention are as follows：Structure of the present invention flexible can become
Shape, can as needed adjust its deflection, so that its visual range is adjusted, and sensitive thin film has spectral response model very wide
Enclose, detecting light spectrum scope is larger, therefore there is the Infrared Detectors based on this array the more rich imaging of higher quality, details to imitate
Really.
Meanwhile, present invention also offers the preparation method of above-mentioned wide spectrum flexible infrared detector array, including following step
Suddenly：
1) flexible thermal is released into electric polymer fully to dissolve to form solution, solution be coated in polishing substrate on and high-temperature baking extremely
Solvent volatilizees to form sensitive thin film completely, and sensitive thin film forms sensitive thin film layer after peeling off；
2) the upper and lower surface of sensitive thin film layer deposits the metallic film of same thickness using magnetron sputtering mode, is formed upper and lower
Electrode, the overlapping region of upper and lower electrode constitutes effective sensing unit；
3) sensitive thin film layer opens up the through hole that bottom electrode is led to sensitive thin film layer upper surface, metal is filled in through hole and is schemed
Shape；
4) choose and accumulated and shape identical thin silicon wafer with sensitive thin film aspect, and strip through-hole is prepared in thin silicon wafer；
5) sensitive thin film layer is glued in thin silicon wafer, with effective sensing unit and strip through-hole center be correspondingly arranged for
It is accurate；
6) thin silicon wafer is corroded the support column arrangement to form separation using anisotropic etch mode, supporting silicon chip is constituted
Layer；
7) supporting silicon chip layer is glued in flexible substrate layer, completes to make.
Preparation method of the invention is simple to operate, with different levels can prepare each array structure and form array, and quick
Sense thin film layer thickness is uniform, and upper and lower thickness of electrode is certain and controllable, and effective sensing unit is correspondingly arranged also with strip through-hole center
Improve effective pixel of array.
Brief description of the drawings
Fig. 1 is structural representation of the invention；
Fig. 2 is the structural representation of sensitive thin film of the present invention；
Fig. 3 is the front view of sensitive thin film of the present invention；
Fig. 4 is the rear view of sensitive thin film of the present invention；
Fig. 5 is the through hole schematic diagram of sensitive thin film of the present invention；
Fig. 6 is the structural representation of thin silicon wafer of the present invention；
Fig. 7 is the laminating schematic diagram of thin silicon wafer of the present invention and sensitive thin film；
Fig. 8 is the structural representation of supporting silicon chip layer of the present invention；
Marked in figure：1st, flexible substrate layer；2nd, supporting silicon chip layer；3rd, sensitive thin film layer.
Specific embodiment
The present invention is further illustrated below in conjunction with the accompanying drawings.Embodiments of the present invention include but is not limited to following reality
Apply example.
A kind of wide spectrum flexible infrared detector array as shown in Figure 1, including the flexible liner for setting gradually from the bottom up
Bottom 1, supporting silicon chip layer 2 and sensitive thin film layer 3；Wherein, there is layer of metal film on the upper and lower surface of sensitive thin film layer 3 respectively
Used as upper and lower electrode, the overlapping region of upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer 3 is by flexible pyroelectricity
Polymer is constituted.
The present embodiment flexible substrate layer 1, supporting silicon chip layer 2 and sensitive thin film layer 3 can plastic deformation so that can basis
Need to adjust its deflection and visual range, and sensitive thin film layer 3 is released electric polymer and is constituted by flexible thermal, so that sensitive thin film
Layer 3 has spectral response range very wide and detecting light spectrum scope, such that it is able to improve the image quality and effect of Infrared Detectors
Really, and axis information more enrich.
Electric polymer is released for PVDF (Kynoar), PVDF-HFP (Kynoar-hexafluoro in the present embodiment flexible thermal
Propylene), PVDF-TrFE (polyvinylidene fluoride-trifluoro-ethylene), odd nylonses, in PVC (polyvinyl chloride) or PPP (polypropylene)
One or more.
In the present embodiment, the flexible thermal releases electric polymer doped with inorganic piezoelectric ceramics, inorganic piezoelectric crystal, metal
One or more in oxide, CNT, Graphene.Inorganic piezoelectric ceramics such as lead zirconate titanate, barium titanate, inorganic piezoelectric are brilliant
Body such as quartz, lithium tantalate, metal oxide such as titanium oxide, zinc oxide, CNT, Graphene release electric polymer in flexible thermal
The performance of material can be further improved after middle addition, increases its sensitiveness and intensity, it is to avoid cause to damage after deformation.
The sensitive thin film layer 3 of the present embodiment uses curtain coating casting, hot pressing, is coated with or electrostatic spraying mode film forming.It is sensitive thin
Film layer 3 uses aforesaid way, it is ensured that its integral thickness is uniform, and controllable thickness size, and the film of preparation can expire
Sufficient imaging requirements.
Flexible substrate layer 1, the supporting silicon chip layer 2 and sensitive thin film layer 3 of the present embodiment are connected using bonding mode.Pass through
Bonding mode is easy to array to install, debugging and safeguard, and to itself using not impacting.
The metallic film of the present embodiment is aluminium film.
Meanwhile, the present embodiment additionally provides a kind of manufacture method of wide spectrum flexible infrared detector array, including following
Step：
1) flexible thermal is released into electric polymer fully to dissolve to form solution, solution be coated in polishing substrate on and high-temperature baking extremely
Solvent volatilizees to form sensitive thin film completely, and sensitive thin film forms sensitive thin film layer 4 after peeling off；
2) the upper and lower surface of sensitive thin film layer deposits the metallic film of same thickness using magnetron sputtering mode, is formed upper and lower
Electrode, the overlapping region of upper and lower electrode constitutes effective sensing unit；
3) sensitive thin film layer opens up the through hole that bottom electrode is led to sensitive thin film layer upper surface, metal is filled in through hole and is schemed
Shape；The purpose for manufacturing through hole is convenient follow-up extraction electric signal to reading circuit；
4) choose and accumulated and shape identical thin silicon wafer with sensitive thin film aspect, and strip through-hole is prepared in thin silicon wafer；Should
Thin silicon wafer is played a supporting role to sensitive thin film layer；
5) sensitive thin film layer is glued in thin silicon wafer, with effective sensing unit and strip through-hole center be correspondingly arranged for
It is accurate；Will sensitive thin film fit with the thin silicon wafer contraposition with strip through-hole, cause that every a line pixel center and bar shaped are logical during laminating
Hole center is aligned.
6) thin silicon wafer is corroded the support column arrangement to form separation using anisotropic etch mode, supporting silicon chip layer is constituted
2；
7) supporting silicon chip layer is glued in flexible substrate layer 1, completes to make.
It is the complete present invention, the present invention is done in detail below with specific embodiment and with reference to concrete structure, data and step
Describe in detail bright.
Specific embodiment
As shown in figure 1, a kind of wide spectrum flexible infrared detector array, including the flexible substrate being glued successively from the bottom up
Layer, supporting silicon chip layer and sensitive thin film layer；Wherein, there is layer of metal aluminium film conduct on the upper and lower surface of sensitive thin film layer respectively
Upper and lower electrode, the overlapping region of upper and lower electrode constitutes effective sensing unit；The sensitive thin film layer releases electropolymerization by flexible thermal
Thing is constituted；The flexible thermal releases electric polymer for Kynoar-hexafluoropropene；
The specific preparation method of the wide spectrum flexible infrared detector array of the present embodiment is as follows：
1st, it is 85 by mass ratio:15 PVDF (Kynoar) and PHFP (polyhexafluoropropylene) powder mixing；Will mixing
Thing is dissolved in dimethylformamide (DMF) solution, and solute is 10 with solvent quality ratio:90；Solution is applied after after fully dissolving
Overlay on polished glass substrate, then toasted at 110 DEG C；Film is peeled off into shape from glass substrate after solvent volatilizees completely
Into Kynoar-hexafluoropropylene copolymer (PVDF-HFP) sensitive thin film, as shown in Figure 2；
2nd, using magnetron sputtering technique deposit thickness be respectively the metallic aluminium of 50nm as the Top electrode of sensitive thin film and under
Electrode layer, and it is graphical to upper/lower electrode using photoetching or etching technics, and upper/lower electrode overlapping region is effective pixel, its area
It is 200 μm of 200 μ m, as a result as shown in Figure 3, Figure 4；
3rd, through hole is formed on sensitive thin film surface using photoetching, oxygen plasma etching technics, it is heavy using magnetron sputtering technique
Product thickness is simultaneously graphical for the metallic aluminium filling through hole of 500nm, bottom electrode is led into upper surface, as a result as shown in Figure 5；
4th, thin silicon wafer will be formed with sensitive thin film area identical wafer thinning to 100 μm using reduction process；Again with
500nm thermal oxidation silicons are masking layer, form strip through-hole using silicon isotropic etch technique, as a result as shown in Figure 6；
5th, the contraposition of thin silicon wafer and sensitive thin film fit using epoxide-resin glue, caused during laminating every a line pixel center and
Strip through-hole center is aligned, as a result as shown in Figure 7；
6th, with 500nm thermal oxidation silicons as masking layer, it is corrosive liquid to use KOH (potassium hydroxide), with anisotropic etch work
Skill by the further corrosion composition of thin silicon wafer from support column arrangement, formed supporting silicon chip layer, as a result as shown in Figure 8；
7th, use epoxide-resin glue that supporting silicon chip layer is bonded in into the polymethyl methacrylate (PMMA) that thickness is for 500 μm
Flexible substrate, so far technique completion, the array effect for machining is as shown in Figure 1.
Embodiments of the invention are as described above.Described previously is each preferred embodiment of the invention, and each is preferred
Preferred embodiment in embodiment is if not substantially contradictory or premised on a certain preferred embodiment, and each is preferred
Implementation method can arbitrarily stack combinations use, the design parameter in the embodiment and embodiment is merely to understand table
The invention verification process of inventor is stated, and is not used to limit scope of patent protection of the invention, scope of patent protection of the invention
Still it is defined by its claims, every equivalent structure change made with specification of the invention and accompanying drawing content, together
Reason should be included within the scope of the present invention.
Claims (7)
1. a kind of wide spectrum flexible infrared detector array, it is characterised in that including the flexible substrate for setting gradually from the bottom up
Layer, supporting silicon chip layer and sensitive thin film layer；
Wherein,
There is layer of metal film on the upper and lower surface of sensitive thin film layer as upper and lower electrode, the overlapping region of upper and lower electrode respectively
Constitute effective sensing unit；
The sensitive thin film layer is released electric polymer and is constituted by flexible thermal.
2. a kind of wide spectrum flexible infrared detector array according to claim 1, it is characterised in that the flexible thermal is released
Electric polymer is Kynoar, Kynoar-hexafluoropropene, polyvinylidene fluoride-trifluoro-ethylene, odd nylonses, polychlorostyrene
Ethene or polypropylene.
3. a kind of wide spectrum flexible infrared detector array according to claim 1 and 2, it is characterised in that the flexibility
Pyroelectricity is polymer-doped have in inorganic piezoelectric ceramics, inorganic piezoelectric crystal, metal oxide, CNT, Graphene one
Plant or various.
4. a kind of wide spectrum flexible infrared detector array according to claim 1, it is characterised in that the sensitive thin film
Layer uses curtain coating casting, hot pressing, is coated with or electrostatic spraying mode film forming.
5. a kind of wide spectrum flexible infrared detector array according to claim 1, it is characterised in that the flexible substrate
Layer, supporting silicon chip layer and sensitive thin film layer are connected using bonding mode.
6. a kind of wide spectrum flexible infrared detector array according to claim 1, it is characterised in that the metallic film
It is aluminium film.
7. a kind of preparation method of wide spectrum flexible infrared detector array, it is characterised in that comprise the following steps：
1) flexible thermal is released into electric polymer fully to dissolve to form solution, solution is coated on polishing substrate and high-temperature baking is to solvent
Volatilization completely forms sensitive thin film, and sensitive thin film forms sensitive thin film layer after peeling off；
2) the upper and lower surface of sensitive thin film layer deposits the metallic film of same thickness using magnetron sputtering mode, forms upper and lower electricity
Pole, the overlapping region of upper and lower electrode constitutes effective sensing unit；
3) sensitive thin film layer opens up the through hole that bottom electrode is led to sensitive thin film layer upper surface, filling metal and figure in through hole
Change；
4) choose and accumulated and shape identical thin silicon wafer with sensitive thin film aspect, and strip through-hole is prepared in thin silicon wafer；
5) sensitive thin film layer is glued in thin silicon wafer, is correspondingly arranged with strip through-hole center by effective sensing unit and be defined；
6) thin silicon wafer is corroded the support column arrangement to form separation using anisotropic etch mode, supporting silicon chip layer is constituted；
7) supporting silicon chip layer is glued in flexible substrate layer, completes to make.
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| CN201710018828.3A CN106783897B (en) | 2017-01-10 | 2017-01-10 | A kind of wide spectrum flexible infrared detector array and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107479760A (en) * | 2017-09-22 | 2017-12-15 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display panel and display system |
| CN108645520A (en) * | 2018-05-08 | 2018-10-12 | 电子科技大学 | A kind of flexible pyroelectric infrared detector sensing unit of low pressure electrical interference |
| CN108871592A (en) * | 2018-05-08 | 2018-11-23 | 电子科技大学 | A kind of flexible pyroelectricity thermal infrared imager pixel array of low tension and temperature interference |
| WO2020181790A1 (en) * | 2019-03-08 | 2020-09-17 | 吉林大学 | Bionic flexible actuator having real-time feedback function and preparation method therefor |
| CN113432729A (en) * | 2021-06-21 | 2021-09-24 | 华南理工大学 | Flexible pyroelectric detector and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202534698U (en) * | 2012-03-19 | 2012-11-14 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room temperature infrared detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Non-refrigeration infrared imaging focal plane array detector |
-
2017
- 2017-01-10 CN CN201710018828.3A patent/CN106783897B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202534698U (en) * | 2012-03-19 | 2012-11-14 | 中国科学院上海技术物理研究所 | Ferroelectric tunnel junction room temperature infrared detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Non-refrigeration infrared imaging focal plane array detector |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107479760A (en) * | 2017-09-22 | 2017-12-15 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display panel and display system |
| US10719154B2 (en) | 2017-09-22 | 2020-07-21 | Boe Technology Group Co., Ltd. | Display substrate and fabrication method thereof, display panel and display system |
| CN107479760B (en) * | 2017-09-22 | 2021-09-24 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display system |
| CN108645520A (en) * | 2018-05-08 | 2018-10-12 | 电子科技大学 | A kind of flexible pyroelectric infrared detector sensing unit of low pressure electrical interference |
| CN108871592A (en) * | 2018-05-08 | 2018-11-23 | 电子科技大学 | A kind of flexible pyroelectricity thermal infrared imager pixel array of low tension and temperature interference |
| CN108871592B (en) * | 2018-05-08 | 2020-07-03 | 电子科技大学 | Flexible pyroelectric thermal infrared imager pixel array with low voltage and temperature interference |
| CN108645520B (en) * | 2018-05-08 | 2020-08-21 | 电子科技大学 | Flexible pyroelectric infrared detector sensitive unit with low-voltage electric interference |
| WO2020181790A1 (en) * | 2019-03-08 | 2020-09-17 | 吉林大学 | Bionic flexible actuator having real-time feedback function and preparation method therefor |
| US11472157B2 (en) | 2019-03-08 | 2022-10-18 | Jilin University | Bionic flexible actuator with real-time feedback function and preparation method thereof |
| CN113432729A (en) * | 2021-06-21 | 2021-09-24 | 华南理工大学 | Flexible pyroelectric detector and manufacturing method thereof |
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