CN106637089A - 一种紫外探测薄膜的制备方法 - Google Patents

一种紫外探测薄膜的制备方法 Download PDF

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CN106637089A
CN106637089A CN201611229334.1A CN201611229334A CN106637089A CN 106637089 A CN106637089 A CN 106637089A CN 201611229334 A CN201611229334 A CN 201611229334A CN 106637089 A CN106637089 A CN 106637089A
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Suzhou Sichuang Yuanbo Electronic Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Sampling And Sample Adjustment (AREA)

Abstract

本发明公开了一种紫外探测薄膜的制备方法，该方法包括如下步骤：（1）处理基片，（2）将一定量的三氧化钼粉末置于石英舟中，并在石英舟的正上方平放上述处理后的基片，将石英舟置于高温管式炉的石英管中并密封，（3）向石英管中通入氩气或氮气等惰性气体将管中的空气完全排净，热处理，得到产品。该制备方法普适性好、设备要求低、制备简单、重复性好，本发明的复合薄膜均匀性好、性能稳定，具有良好的具有很好的光电灵敏性。

Description

一种紫外探测薄膜的制备方法
技术领域
本发明涉及磁电复合功能材料领域，具体涉及一种紫外探测薄膜的制备方法。
背景技术
近些年透明导电氧化物薄膜一直是光电领域的热点，其中ITO薄膜是目前研究和应用最广泛的透明导电氧化物(TCO)薄膜，因其良好的光电特性而被广泛应用于各种光电器件，但因原材料价格昂贵、铟资源稀少且对环境造成污染，从而限制了它的发展和应用。
紫外探测器作为一种重要的光电器件，被广泛应用于军事、工业生产及日常生活等各个领域，例如臭氧监控、火灾监控及导弹防御***；评价探测器性能的主要参数有开关比及光响应速度，开关比越大、光响应速度越快说明探测器的性能越好，如今已经开发了多种材料基的紫外探测器，如ZnO基紫外探测器、GaN基紫外探测器、AlGaN基紫外探测器等，但高灵敏度的探测器是各个领域一直追求的目标。
发明内容
本发明提供一种紫外探测薄膜的制备方法，该制备方法普适性好、设备要求低、制备简单、重复性好，本发明的复合薄膜均匀性好、性能稳定，具有良好的具有很好的光电灵敏性。
为了实现上述目的，本发明提供了一种紫外探测薄膜的制备方法，该方法包括如下步骤：
（1）处理基片
研磨抛光并清硅基片，备用；所述研磨抛光，可将衬底先在600目的金刚石砂轮盘上进行粗磨10min，然后在1200目的金刚石砂轮盘上进行细磨10min，再用W2.5的金刚石抛光粉进行抛光至试样表面均匀光亮，所述超声清洗，可将研磨抛光后的衬底按以下顺序清洗，丙酮超声清洗5min→无水乙醇超声清洗5min→烘干待用，所述离子源清洗，可采用霍尔离子源对衬底进行清洗5min，压强为2×10-2Pa，衬底温度为300℃，氩气通量为10sccm，偏压为-100V，阴极电流为29.5A，阴极电压为19V，阳极电流为7A，阳极电压为80V，以清除衬底表面的吸附气体以及杂质；
（2）将一定量的三氧化钼粉末置于石英舟中，并在石英舟的正上方平放上述处理后的基片，将石英舟置于高温管式炉的石英管中并密封；
（3）向石英管中通入氩气或氮气等惰性气体将管中的空气完全排净；
设定高温管式炉以15-25℃/min的升温速率升温至850-900℃，其中在温度达到500℃后调小气流量，待温度达到850-900℃时保温10-15min，反应完全后自然降温；
待石英管的温度达到室温时取出样品，得到产品。
具体实施方式
实施例一
研磨抛光并清硅基片，备用；所述研磨抛光，可将衬底先在600目的金刚石砂轮盘上进行粗磨10min，然后在1200目的金刚石砂轮盘上进行细磨10min，再用W2.5的金刚石抛光粉进行抛光至试样表面均匀光亮，所述超声清洗，可将研磨抛光后的衬底按以下顺序清洗，丙酮超声清洗5min→无水乙醇超声清洗5min→烘干待用，所述离子源清洗，可采用霍尔离子源对衬底进行清洗5min，压强为2×10-2Pa，衬底温度为300℃，氩气通量为10sccm，偏压为-100V，阴极电流为29.5A，阴极电压为19V，阳极电流为7A，阳极电压为80V，以清除衬底表面的吸附气体以及杂质。
将一定量的三氧化钼粉末置于石英舟中，并在石英舟的正上方平放上述处理后的基片，将石英舟置于高温管式炉的石英管中并密封。
向石英管中通入氩气或氮气等惰性气体将管中的空气完全排净。
设定高温管式炉以15℃/min的升温速率升温至850℃，其中在温度达到500℃后调小气流量，待温度达到850℃时保温10min，反应完全后自然降温；待石英管的温度达到室温时取出样品，得到产品。
实施例二
研磨抛光并清硅基片，备用；所述研磨抛光，可将衬底先在600目的金刚石砂轮盘上进行粗磨10min，然后在1200目的金刚石砂轮盘上进行细磨10min，再用W2.5的金刚石抛光粉进行抛光至试样表面均匀光亮，所述超声清洗，可将研磨抛光后的衬底按以下顺序清洗，丙酮超声清洗5min→无水乙醇超声清洗5min→烘干待用，所述离子源清洗，可采用霍尔离子源对衬底进行清洗5min，压强为2×10-2Pa，衬底温度为300℃，氩气通量为10sccm，偏压为-100V，阴极电流为29.5A，阴极电压为19V，阳极电流为7A，阳极电压为80V，以清除衬底表面的吸附气体以及杂质。
将一定量的三氧化钼粉末置于石英舟中，并在石英舟的正上方平放上述处理后的基片，将石英舟置于高温管式炉的石英管中并密封。
向石英管中通入氩气或氮气等惰性气体将管中的空气完全排净。
设定高温管式炉以25℃/min的升温速率升温至900℃，其中在温度达到500℃后调小气流量，待温度达到900℃时保温15min，反应完全后自然降温；待石英管的温度达到室温时取出样品，得到产品。

Claims (1)

1.一种紫外探测薄膜的制备方法，该制备方法普适性好、设备要求低、制备简单、重复性好，本发明的复合薄膜均匀性好、性能稳定，具有良好的具有很好的光电灵敏性，为了实现上述目的，本发明提供了一种紫外探测薄膜的制备方法，该方法包括如下步骤：
（1）处理基片
研磨抛光并清硅基片，备用；所述研磨抛光，可将衬底先在600目的金刚石砂轮盘上进行粗磨10min，然后在1200目的金刚石砂轮盘上进行细磨10min，再用W2.5的金刚石抛光粉进行抛光至试样表面均匀光亮，所述超声清洗，可将研磨抛光后的衬底按以下顺序清洗，丙酮超声清洗5min→无水乙醇超声清洗5min→烘干待用，所述离子源清洗，可采用霍尔离子源对衬底进行清洗5min，压强为2×10-2Pa，衬底温度为300℃，氩气通量为10sccm，偏压为-100V，阴极电流为29.5A，阴极电压为19V，阳极电流为7A，阳极电压为80V，以清除衬底表面的吸附气体以及杂质；
（2）将一定量的三氧化钼粉末置于石英舟中，并在石英舟的正上方平放上述处理后的基片，将石英舟置于高温管式炉的石英管中并密封；
（3）向石英管中通入氩气或氮气等惰性气体将管中的空气完全排净；
设定高温管式炉以15-25℃/min的升温速率升温至850-900℃，其中在温度达到500℃后调小气流量，待温度达到850-900℃时保温10-15min，反应完全后自然降温；
待石英管的温度达到室温时取出样品，得到产品。
CN201611229334.1A 2016-12-27 2016-12-27 一种紫外探测薄膜的制备方法 Pending CN106637089A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101775585A (zh) * 2010-02-11 2010-07-14 厦门大学 一种高硬度氮化锆硬质涂层的制备方法
CN101820016A (zh) * 2010-04-16 2010-09-01 厦门大学 一种二氧化钛紫外光电探测器的制备方法
CN105621487A (zh) * 2016-03-03 2016-06-01 广东工业大学 一种三氧化钼薄膜的制备方法及制备的光电器件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101775585A (zh) * 2010-02-11 2010-07-14 厦门大学 一种高硬度氮化锆硬质涂层的制备方法
CN101820016A (zh) * 2010-04-16 2010-09-01 厦门大学 一种二氧化钛紫外光电探测器的制备方法
CN105621487A (zh) * 2016-03-03 2016-06-01 广东工业大学 一种三氧化钼薄膜的制备方法及制备的光电器件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
班冬梅 等: ""三氧化钼纳米带的电致变色机理研究"", 《海南师范大学学报(自然科学版)》 *

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