CN106597770A - 一种阵列基板及其制作方法、显示装置 - Google Patents

一种阵列基板及其制作方法、显示装置 Download PDF

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CN106597770A
CN106597770A CN201611238390.1A CN201611238390A CN106597770A CN 106597770 A CN106597770 A CN 106597770A CN 201611238390 A CN201611238390 A CN 201611238390A CN 106597770 A CN106597770 A CN 106597770A
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layer
light resistance
color light
resistance layer
electrode
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CN106597770B (zh
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郭志轩
王凤国
武新国
刘弘
王子峰
李元博
李峰
马波
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US15/747,687 priority patent/US10424669B2/en
Priority to PCT/CN2017/090363 priority patent/WO2018120691A1/zh
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Abstract

本发明公开了一种阵列基板及其制作方法、显示装置，用以省去现有技术的树脂层，节约成本，简化工艺流程。阵列基板的制作方法包括：通过构图工艺在衬底基板上制作源极和漏极；在所述源极和所述漏极上制作若干阵列排列的彩色光阻层，每一所述彩色光阻层与阵列基板的亚像素单元对应，相邻两所述彩色光阻层之间邻接且无间隙；对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，在与所述漏极对应位置处暴露出部分漏极。

Description

一种阵列基板及其制作方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法、显示装置。
背景技术
薄膜晶体管液晶显示面板(Thin Film Transistor Liquid Crystal Display，TFT-LCD)是目前常用的平板显示器，液晶显示面板以其体积小、功耗低、无辐射、分辨率高等优点，被广泛地应用于现代数字信息化设备中。
如图1所示，现有技术的薄膜晶体管液晶显示面板中的低温多晶硅(LowTemperature Poly-Silicon,LTPS)产品包括相对设置的阵列基板100和彩膜基板101，以及位于阵列基板100和彩膜基板101之间的液晶层111，其中，阵列基板100包括位于衬底基板102上的数据线103、位于数据线103上的树脂层107、位于树脂层107上的公共电极104、位于公共电极104上的绝缘层105、位于绝缘层105上的像素电极106；彩膜基板101包括位于衬底基板102上的彩色光阻层108，以及位于相邻的彩色光阻层108之间的黑矩阵109。
综上所述，现有技术阵列基板中用树脂层充当平坦层，阻隔数据线金属层和公共电极之间的信号串扰，并在彩膜基板侧涂布彩色光阻层，这样制作不但增加显示面板厚度，而且浪费材料，造成工艺流程复杂。
发明内容
本发明实施例提供了一种阵列基板及其制作方法、显示装置，用以省去现有技术的树脂层，节约成本，简化工艺流程。
本发明实施例提供的一种阵列基板的制作方法，包括：
通过构图工艺在衬底基板上制作源极和漏极；
在所述源极和所述漏极上制作若干阵列排列的彩色光阻层，每一所述彩色光阻层与阵列基板的亚像素单元对应，相邻两所述彩色光阻层之间邻接且无间隙；
对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，在与所述漏极对应位置处暴露出部分漏极。
由本发明实施例提供的阵列基板的制作方法，由于该方法在源极和漏极上制作有若干阵列排列的彩色光阻层，相邻两彩色光阻层之间邻接且无间隙，因此，通过本发明具体实施例制作形成的彩色光阻层能够起到平坦作用，并且能够阻隔源极和漏极金属层和后续制作的公共电极之间的信号串扰，因此，本发明具体实施例能够省去现有技术的树脂层，节约成本，简化工艺流程；另外，由于本发明具体实施例对相邻两彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，因此能够将不同颜色的光阻分隔开，能够避免彩色光阻层之间的混色发生，本发明具体实施例将彩色光阻层制作在阵列基板侧，能够减小显示面板的厚度。
较佳地，所述彩色光阻层包括红色光阻层、绿色光阻层和蓝色光阻层。
较佳地，所述在所述源极和所述漏极上制作若干阵列排列的彩色光阻层，包括：
在所述源极和所述漏极上制作一层红色树脂层，对所述红色树脂层进行曝光和显影，形成与所述亚像素单元对应的红色光阻层；
在完成上述步骤的衬底基板上制作一层绿色树脂层，对所述绿色树脂层进行曝光和显影，形成与所述亚像素单元对应的绿色光阻层，所述绿色光阻层与所述红色光阻层之间邻接且无间隙；
在完成上述步骤的衬底基板上制作一层蓝色树脂层，对所述蓝色树脂层进行曝光和显影，形成与所述亚像素单元对应的蓝色光阻层，所述蓝色光阻层与所述绿色光阻层之间邻接且无间隙。
较佳地，所述对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影之后，还包括：
对经过曝光和显影后的彩色光阻层在预设温度范围内进行烘烤。
较佳地，所述通过构图工艺在衬底基板上制作源极和漏极之前，具体包括：
在衬底基板上通过构图工艺制作遮光层；
在所述遮光层上制作缓冲层，在所述缓冲层上通过构图工艺制作半导体有源层；
在所述半导体有源层上制作第一绝缘层；
在所述第一绝缘层上通过构图工艺制作栅极，在所述栅极上通过构图工艺制作第二绝缘层；或，
在衬底基板上通过构图工艺制作栅极；
在所述栅极上制作第一绝缘层，在所述第一绝缘层上通过构图工艺制作半导体有源层；
在所述半导体有源层上通过构图工艺制作第二绝缘层。
较佳地，所述对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影之后，具体包括：
在所述彩色光阻层上通过构图工艺制作公共电极，在所述公共电极上通过构图工艺制作钝化层；
在所述钝化层上通过构图工艺制作像素电极，所述像素电极与暴露出来的所述漏极电连接；或，
在所述彩色光阻层上通过构图工艺制作像素电极，所述像素电极与暴露出来的所述漏极电连接；
在所述像素电极上通过构图工艺制作钝化层，在所述钝化层上通过构图工艺制作公共电极。
本发明实施例还提供了一种阵列基板，包括位于衬底基板上的源极和漏极，位于所述源极和所述漏极上的若干阵列排列的彩色光阻层，每一所述彩色光阻层与阵列基板的亚像素单元对应；
相邻两所述彩色光阻层之间的预设区域内存在贯穿所述彩色光阻层的间隙，与所述漏极位置对应的间隙位置处暴露出部分所述漏极。
较佳地，所述阵列基板具体包括：依次位于所述衬底基板上的遮光层、缓冲层、半导体有源层、第一绝缘层、栅极、第二绝缘层、源极和漏极、彩色光阻层、公共电极、钝化层和像素电极；或，
依次位于所述衬底基板上的遮光层、缓冲层、半导体有源层、第一绝缘层、栅极、第二绝缘层、源极和漏极、彩色光阻层、像素电极、钝化层和公共电极。
较佳地，所述阵列基板具体包括：依次位于所述衬底基板上的栅极、第一绝缘层、半导体有源层、第二绝缘层、源极和漏极、彩色光阻层、公共电极、钝化层和像素电极；或，
依次位于所述衬底基板上的栅极、第一绝缘层、半导体有源层、第二绝缘层、源极和漏极、彩色光阻层、像素电极、钝化层和公共电极。
本发明实施例还提供了一种显示装置，该显示装置包括上述的阵列基板。
附图说明
图1为现有技术的显示面板结构示意图；
图2为本发明实施例提供的一种阵列基板的制作方法流程图；
图3-图9为本发明实施例一提供的一种阵列基板的制作过程的不同阶段的结构图；
图10为本发明实施例提供的显示面板的结构示意图；
图11为本发明实施例二提供的一种阵列基板的结构示意图。
具体实施方式
本发明实施例提供了一种阵列基板及其制作方法、显示装置，用以省去现有技术的树脂层，节约成本，简化工艺流程。
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
如图2所示，本发明具体实施例提供了一种阵列基板的制作方法，包括：
S201、通过构图工艺在衬底基板上制作源极和漏极；
S202、在所述源极和所述漏极上制作若干阵列排列的彩色光阻层，每一所述彩色光阻层与阵列基板的亚像素单元对应，相邻两所述彩色光阻层之间邻接且无间隙；
S203、对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，在与所述漏极对应位置处暴露出部分漏极。
具体地，本发明具体实施例的彩色光阻层包括红色光阻层、绿色光阻层和蓝色光阻层，当然，在实际生产过程中，彩色光阻层还可以包括其它颜色的光阻层，如：还可以包括黄色光阻层。本发明以下的具体实施例仅以彩色光阻层包括红色光阻层、绿色光阻层和蓝色光阻层为例介绍。
由本发明具体实施例提供的阵列基板的制作方法，由于该方法在源极和漏极上制作有若干阵列排列的彩色光阻层，相邻两彩色光阻层之间邻接且无间隙，因此，通过本发明具体实施例制作形成的彩色光阻层能够起到平坦作用，并且能够阻隔源极和漏极金属层与后续制作的公共电极之间的信号串扰，因此，本发明具体实施例能够省去现有技术的树脂层，节约成本，简化工艺流程；另外，由于本发明具体实施例对相邻两彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，因此能够将不同颜色的光阻分隔开，能够避免彩色光阻层之间的混色发生，本发明具体实施例将彩色光阻层制作在阵列基板侧，能够减小显示面板的厚度。
下面结合附图详细介绍本发明具体实施例提供的阵列基板的制作方法，附图中各膜层厚度和区域大小、形状不反应各膜层的真实比例，目的只是示意说明本发明内容。
具体地，本发明具体实施例的阵列基板包括的薄膜晶体管可以为底栅型的薄膜晶体管，也可以为顶栅型的薄膜晶体管，当然，在实际生产过程中，还可以为其它类型的薄膜晶体管，如：薄膜晶体管可以为侧栅型的薄膜晶体管，本发明具体实施例主要以顶栅型的薄膜晶体管和底栅型的薄膜晶体管为例进行介绍。
实施例一：
本发明具体实施例一以阵列基板包括的薄膜晶体管为顶栅型的薄膜晶体管为例进行介绍。
如图3所示，本发明具体实施例通过构图工艺在衬底基板上制作源极和漏极之前，还包括：在衬底基板102上通过构图工艺制作遮光层301，本发明具体实施例中的构图工艺包括光刻胶的涂覆、曝光、显影、去除光刻胶的部分或全部过程。具体实施时，在衬底基板102上沉积一层金属层，然后对金属层进行曝光、显影，形成遮光层的图形，之后再对金属层进行湿法刻蚀，最后去除剩余的光刻胶，形成遮光层301。本发明具体实施例的衬底基板102可以为玻璃基板，也可以为石英基板，还可以为柔性基板，本发明具体实施例沉积的金属层可以为钼(Mo)、铝(Al)、镍(Ni)等的任一单层金属层，也可以为任意金属组合形成的复合金属层。
如图3所示，接着，在遮光层301上制作缓冲层302，在缓冲层302上通过构图工艺制作半导体有源层304，优选地，本发明具体实施例中的半导体有源层304为低温多晶硅半导体有源层。具体实施时，在缓冲层302上沉积一层非晶硅层，然后对非晶硅层进行曝光、显影，形成半导体有源层的图形，之后再对非晶硅层进行干法刻蚀，最后去除剩余的光刻胶，并对形成的非晶硅层进行准分子激光退火处理，形成半导体有源层304。
如图3所示，接着，在半导体有源层304上制作第一绝缘层303，在第一绝缘层303上通过构图工艺制作栅极305。具体实施时，在第一绝缘层303上沉积一层金属层，然后对金属层进行曝光、显影，形成栅极的图形，之后再对金属层进行湿法刻蚀，最后去除剩余的光刻胶，形成栅极305，本发明具体实施例沉积的金属层可以为钼(Mo)、铝(Al)、镍(Ni)等的任一单层金属层，也可以为任意金属组合形成的复合金属层。
如图3所示，接着，在栅极305上通过构图工艺制作第二绝缘层306，本发明具体实施例第二绝缘层306的材料可以与第一绝缘层303的材料相同，也可以不相同，第二绝缘层306可以为氧化硅或氮化硅，也可以为氧化硅和氮化硅的组合材料。具体实施时，在栅极305上沉积一层绝缘膜层，然后对绝缘膜层进行曝光、显影，形成第二绝缘层的图形，之后再对绝缘膜层进行干法刻蚀，最后去除剩余的光刻胶，形成第二绝缘层306。
如图3所示，接着，在第二绝缘层306上通过构图工艺制作源极307和漏极308，本发明具体实施例源极307和漏极308的材料可以与栅极305采用相同的材料，当然也可以采用不同的材料，本发明具体实施例为了节省材料成本，优选源极307和漏极308的材料与栅极305的材料相同。具体实施时，在第二绝缘层306上沉积一层金属层，然后对金属层进行曝光、显影，形成源极307和漏极308的图形，之后再对金属层进行湿法或干法刻蚀，最后去除剩余的光刻胶，形成源极307和漏极308。
如图4所示，接着，在源极307和漏极308上制作一层红色树脂层400，具体可以采用旋涂等方式制作红色树脂层400，对红色树脂层400进行曝光和显影，图中黑色箭头方向表示曝光过程中光线的传播方向，本发明具体实施例红色树脂层400的材料特性采用与现有技术树脂层107的材料特性相同的树脂材料，并且红色树脂层400的旋涂厚度可以与现有技术的树脂层107的厚度相同，显影后形成与亚像素单元对应的红色光阻层401，如图5所示。
如图6所示，接着，采用同样的方法在源极307和漏极308上形成绿色光阻层402和蓝色光阻层403，红色光阻层401、绿色光阻层402和蓝色光阻层403之间无间隙，红色光阻层401、绿色光阻层402和蓝色光阻层403的交界处形成在漏极308的上方。
具体地，在形成有红色光阻层401的衬底基板上旋涂一层绿色树脂层，对绿色树脂层进行曝光和显影，形成与亚像素单元对应的绿色光阻层402，绿色光阻层402与红色光阻层401之间邻接且无间隙；在形成有绿色光阻层402的衬底基板上旋涂一层蓝色树脂层，对蓝色树脂层进行曝光和显影，形成与亚像素单元对应的蓝色光阻层403，蓝色光阻层403与绿色光阻层402之间邻接且无间隙。
如图7所示，接着，对红色光阻层401和绿色光阻层402交界面处预设区域内的红色光阻层401和绿色光阻层402进行曝光和显影，对绿色光阻层402和蓝色光阻层403交界面处预设区域内的绿色光阻层402和蓝色光阻层403进行曝光和显影，图中黑色箭头方向表示曝光过程中光线的传播方向。本发明具体实施例中的预设区域根据实际生产需要设定，只要能够使得显影后形成的孔洞能够确保后续制作的像素电极能够与漏极连接，并且使彩色光阻层之间产生一定的间距，避免串色的发生即可。
如图8所示，显影后在相邻的红色光阻层401和绿色光阻层402之间形成贯穿红色光阻层401和绿色光阻层402的孔洞，孔洞位置处暴露出部分漏极308，在相邻的绿色光阻层402和蓝色光阻层403之间形成贯穿绿色光阻层402和蓝色光阻层403的孔洞，孔洞位置处暴露出部分漏极308。
优选地，本发明具体实施例在对相邻两彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影之后，还包括：对经过曝光和显影后的彩色光阻层在预设温度范围内进行烘烤，达到固化的作用，本发明具体实施例的预设温度根据实际生产需要设定。如：对图8所示的红色光阻层401、绿色光阻层402和蓝色光阻层403在240℃的情况下烘烤40分钟。
本发明具体实施例彩色光阻层的介电常数非常接近有机绝缘膜的介电常数，使源极307和漏极308与后续制作的像素电极的串扰也很小，不会影响阵列基板原有性能；孔洞使彩色光阻层之间产生一定间距，暴露出来的下部漏极也会起到挡光作用。本发明具体实施例有效利用源极307和漏极308金属层布线较密和挡光的特定，使源极307和漏极308金属层的布线起到遮挡作用。
如图9所示，接着，在红色光阻层401、绿色光阻层402和蓝色光阻层403上通过构图工艺制作公共电极901，在公共电极901上通过构图工艺制作钝化层902，在钝化层902上通过构图工艺制作像素电极903，像素电极903与暴露出来的漏极308电连接。本发明具体实施例公共电极901、钝化层902和像素电极903的具体制作方法与现有技术相同，这里不再赘述。本发明具体实施例公共电极的材料可以与像素电极的材料相同，也可以不相同，实际生产过程中优选公共电极的材料与像素电极的材料相同，具体可以为氧化铟锡或氧化铟锌的单层膜层，也可以为氧化铟锡和氧化铟锌的复合膜层。
当然，实际生产过程中本发明具体实施例还可以在红色光阻层401、绿色光阻层402和蓝色光阻层403上先通过构图工艺制作像素电极903，然后在像素电极903上通过构图工艺制作钝化层902，在钝化层902上通过构图工艺制作公共电极901，这种情况下公共电极901、钝化层902和像素电极903的具体制作方法也与现有技术相同，这里不再赘述。
另外，如图10所示，由本发明具体实施例提供的阵列基板的制作方法制作形成的阵列基板构成的显示面板包括：与该阵列基板100相对设置的对向基板1000，在图7和图8的步骤过程中也在数据线103上方相邻的彩色光阻层108的交界面处形成孔洞1001，本发明具体实施例中的数据线除了能够传输数据信号和触控信号外，还能够遮挡背光源，起到与现有技术的黑矩阵相同的挡光作用。
本发明具体实施例的彩色光阻层108位于阵列基板上，显示面板不受上下基板对位误差的影响，减小了漏光和串色不良的产生，另外，本发明具体实施例通过图7和图8的步骤形成的孔洞比现有技术形成的黑矩阵的尺寸小，因此，本发明具体实施例还能够提升显示面板的开口率。
实施例二：
本发明具体实施例二以阵列基板包括的薄膜晶体管为底栅型的薄膜晶体管为例进行介绍。
如图11所示，本发明具体实施例通过构图工艺在衬底基板102上制作源极307和漏极308之前，还包括：在衬底基板102上通过构图工艺制作栅极305；在栅极305上制作第一绝缘层303，在第一绝缘层303上通过构图工艺制作半导体有源层304；在半导体有源层304上通过构图工艺制作第二绝缘层306。本发明具体实施例栅极305、第一绝缘层303、半导体有源层304和第二绝缘层306的具体制作方法与现有技术相同，这里不再赘述。
如图11所示，接着，在第二绝缘层306上通过构图工艺制作源极307和漏极308，源极307和漏极308的具体制作方法与本发明具体实施例一相同，这里不再赘述。接着，在源极307和漏极308上制作红色光阻层401、绿色光阻层402和蓝色光阻层403，红色光阻层401、绿色光阻层402和蓝色光阻层403的具体制作方法与本发明具体实施例一相同，这里不再赘述。
如图11所示，接着，在红色光阻层401、绿色光阻层402和蓝色光阻层403上通过构图工艺制作公共电极901，在公共电极901上通过构图工艺制作钝化层902，在钝化层902上通过构图工艺制作像素电极903，本发明具体实施例公共电极901、钝化层902和像素电极903的具体制作方法与现有技术相同，这里不再赘述。
当然，实际生产过程中本发明具体实施例还可以在红色光阻层401、绿色光阻层402和蓝色光阻层403上先通过构图工艺制作像素电极903，然后在像素电极903上通过构图工艺制作钝化层902，在钝化层902上通过构图工艺制作公共电极901，这种情况下公共电极901、钝化层902和像素电极903的具体制作方法也与现有技术相同，这里不再赘述。
基于同样的发明构思，如图9和图11所示，本发明具体实施例还提供了一种阵列基板，包括位于衬底基板102上的源极307和漏极308，位于源极307和漏极308上的若干阵列排列的彩色光阻层(红色光阻层401、绿色光阻层402和蓝色光阻层403)，每一彩色光阻层与阵列基板的亚像素单元对应；相邻两彩色光阻层之间的预设区域内存在贯穿彩色光阻层的间隙，与漏极308位置对应的间隙位置处暴露出部分漏极308。
具体地，如图9所示，本发明具体实施例的阵列基板具体包括：依次位于衬底基板102上的遮光层301、缓冲层302、半导体有源层304、第一绝缘层303、栅极305、第二绝缘层306、源极307和漏极308、彩色光阻层(红色光阻层401、绿色光阻层402和蓝色光阻层403)、公共电极901、钝化层902和像素电极903。当然，本发明具体实施例的阵列基板还可以包括：依次位于衬底基板上的遮光层301、缓冲层302、半导体有源层304、第一绝缘层303、栅极305、第二绝缘层306、源极307和漏极308、彩色光阻层(红色光阻层401、绿色光阻层402和蓝色光阻层403)、像素电极903、钝化层902和公共电极901。
具体地，如图11所示，本发明具体实施例的阵列基板具体包括：依次位于衬底基板102上的栅极305、第一绝缘层303、半导体有源层304、第二绝缘层306、源极307和漏极308、彩色光阻层(红色光阻层401、绿色光阻层402和蓝色光阻层403)、公共电极901、钝化层902和像素电极903。当然，本发明具体实施例的阵列基板还可以包括：依次位于衬底基板102上的栅极305、第一绝缘层303、半导体有源层304、第二绝缘层306、源极307和漏极308、彩色光阻层(红色光阻层401、绿色光阻层402和蓝色光阻层403)、像素电极903、钝化层902和公共电极901。
基于同样的发明构思，本发明具体实施例还提供了一种显示装置，该显示装置包括本发明具体实施例提供的上述阵列基板，该显示装置可以为液晶面板、液晶显示器、液晶电视、有机发光二极管(Organic Light Emitting Diode，OLED)面板、OLED显示器、OLED电视或电子纸等显示装置。
综上所述，本发明具体实施例提供一种阵列基板的制作方法，包括：通过构图工艺在衬底基板上制作源极和漏极；在源极和漏极上制作若干阵列排列的彩色光阻层，每一彩色光阻层与阵列基板的亚像素单元对应，相邻两彩色光阻层之间邻接且无间隙；对相邻两彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，在与漏极对应位置处暴露出部分漏极。由于该方法在源极和漏极上制作有若干阵列排列的彩色光阻层，相邻两彩色光阻层之间邻接且无间隙，因此，通过本发明具体实施例制作形成的彩色光阻层能够起到平坦作用，并且能够阻隔源极和漏极金属层和后续制作的公共电极之间的信号串扰，因此，本发明具体实施例能够省去现有技术的树脂层，节约成本，简化工艺流程；另外，由于本发明具体实施例对相邻两彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，因此能够将不同颜色的光阻分隔开，能够避免彩色光阻层之间的混色发生，本发明具体实施例将彩色光阻层制作在阵列基板侧，能够减小显示面板的厚度。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种阵列基板的制作方法，其特征在于，包括：
通过构图工艺在衬底基板上制作源极和漏极；
在所述源极和所述漏极上制作若干阵列排列的彩色光阻层，每一所述彩色光阻层与阵列基板的亚像素单元对应，相邻两所述彩色光阻层之间邻接且无间隙；
对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影，去除该预设区域内的彩色光阻层，在与所述漏极对应位置处暴露出部分漏极。
2.根据权利要求1所述的制作方法，其特征在于，所述彩色光阻层包括红色光阻层、绿色光阻层和蓝色光阻层。
3.根据权利要求2所述的制作方法，其特征在于，所述在所述源极和所述漏极上制作若干阵列排列的彩色光阻层，包括：
在所述源极和所述漏极上制作一层红色树脂层，对所述红色树脂层进行曝光和显影，形成与所述亚像素单元对应的红色光阻层；
在完成上述步骤的衬底基板上制作一层绿色树脂层，对所述绿色树脂层进行曝光和显影，形成与所述亚像素单元对应的绿色光阻层，所述绿色光阻层与所述红色光阻层之间邻接且无间隙；
在完成上述步骤的衬底基板上制作一层蓝色树脂层，对所述蓝色树脂层进行曝光和显影，形成与所述亚像素单元对应的蓝色光阻层，所述蓝色光阻层与所述绿色光阻层之间邻接且无间隙。
4.根据权利要求1所述的制作方法，其特征在于，所述对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影之后，还包括：
对经过曝光和显影后的彩色光阻层在预设温度范围内进行烘烤。
5.根据权利要求1所述的制作方法，其特征在于，所述通过构图工艺在衬底基板上制作源极和漏极之前，具体包括：
在衬底基板上通过构图工艺制作遮光层；
在所述遮光层上制作缓冲层，在所述缓冲层上通过构图工艺制作半导体有源层；
在所述半导体有源层上制作第一绝缘层；
在所述第一绝缘层上通过构图工艺制作栅极，在所述栅极上通过构图工艺制作第二绝缘层；或，
在衬底基板上通过构图工艺制作栅极；
在所述栅极上制作第一绝缘层，在所述第一绝缘层上通过构图工艺制作半导体有源层；
在所述半导体有源层上通过构图工艺制作第二绝缘层。
6.根据权利要求1所述的制作方法，其特征在于，所述对相邻两所述彩色光阻层交界面处预设区域内的彩色光阻层进行曝光和显影之后，具体包括：
在所述彩色光阻层上通过构图工艺制作公共电极，在所述公共电极上通过构图工艺制作钝化层；
在所述钝化层上通过构图工艺制作像素电极，所述像素电极与暴露出来的所述漏极电连接；或，
在所述彩色光阻层上通过构图工艺制作像素电极，所述像素电极与暴露出来的所述漏极电连接；
在所述像素电极上通过构图工艺制作钝化层，在所述钝化层上通过构图工艺制作公共电极。
7.一种阵列基板，其特征在于，包括位于衬底基板上的源极和漏极，位于所述源极和所述漏极上的若干阵列排列的彩色光阻层，每一所述彩色光阻层与阵列基板的亚像素单元对应；
相邻两所述彩色光阻层之间的预设区域内存在贯穿所述彩色光阻层的间隙，与所述漏极位置对应的间隙位置处暴露出部分所述漏极。
8.根据权利要求7所述的阵列基板，其特征在于，具体包括：依次位于所述衬底基板上的遮光层、缓冲层、半导体有源层、第一绝缘层、栅极、第二绝缘层、源极和漏极、彩色光阻层、公共电极、钝化层和像素电极；或，
依次位于所述衬底基板上的遮光层、缓冲层、半导体有源层、第一绝缘层、栅极、第二绝缘层、源极和漏极、彩色光阻层、像素电极、钝化层和公共电极。
9.根据权利要求7所述的阵列基板，其特征在于，具体包括：依次位于所述衬底基板上的栅极、第一绝缘层、半导体有源层、第二绝缘层、源极和漏极、彩色光阻层、公共电极、钝化层和像素电极；或，
依次位于所述衬底基板上的栅极、第一绝缘层、半导体有源层、第二绝缘层、源极和漏极、彩色光阻层、像素电极、钝化层和公共电极。
10.一种显示装置，其特征在于，包括权利要求7-9任一项所述的阵列基板。
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CN110911446A (zh) * 2018-09-18 2020-03-24 乐金显示有限公司 有机发光显示装置
CN110911446B (zh) * 2018-09-18 2023-11-14 乐金显示有限公司 有机发光显示装置
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