CN106531625B - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
- Publication number
- CN106531625B CN106531625B CN201610239950.9A CN201610239950A CN106531625B CN 106531625 B CN106531625 B CN 106531625B CN 201610239950 A CN201610239950 A CN 201610239950A CN 106531625 B CN106531625 B CN 106531625B
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- chip
- semiconductor device
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- peripheral part
- manufacturing
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000007767 bonding agent Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 abstract description 11
- 238000000227 grinding Methods 0.000 description 22
- 238000005520 cutting process Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 14
- 208000037656 Respiratory Sounds Diseases 0.000 description 10
- 239000000470 constituent Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 206010011376 Crepitations Diseases 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015180152A JP6410152B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置の製造方法 |
JP2015-180152 | 2015-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106531625A CN106531625A (zh) | 2017-03-22 |
CN106531625B true CN106531625B (zh) | 2019-07-12 |
Family
ID=58237058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610239950.9A Active CN106531625B (zh) | 2015-09-11 | 2016-04-18 | 半导体装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20170076969A1 (zh) |
JP (1) | JP6410152B2 (zh) |
CN (1) | CN106531625B (zh) |
TW (1) | TWI663024B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016109693B4 (de) * | 2016-05-25 | 2022-10-27 | Infineon Technologies Ag | Verfahren zum Trennen von Halbleiterdies von einem Halbleitersubstrat und Halbleitersubstratanordnung |
US9905466B2 (en) * | 2016-06-28 | 2018-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer partitioning method and device formed |
JP6893691B2 (ja) * | 2017-09-29 | 2021-06-23 | 三星ダイヤモンド工業株式会社 | 複層脆性材料基板の作製方法および作製システム |
CN108436604B (zh) * | 2018-04-23 | 2020-12-08 | 苏试宜特(上海)检测技术有限公司 | 应用于低介电材质覆晶芯片的防脱层研磨方法 |
JP7109537B2 (ja) * | 2018-04-27 | 2022-07-29 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
JP6934563B2 (ja) * | 2018-04-27 | 2021-09-15 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理方法 |
JP7237464B2 (ja) * | 2018-05-24 | 2023-03-13 | キオクシア株式会社 | 半導体装置の製造方法 |
JP7132042B2 (ja) * | 2018-09-10 | 2022-09-06 | 株式会社ディスコ | 加工装置 |
JP2020057709A (ja) * | 2018-10-03 | 2020-04-09 | 株式会社ディスコ | ウェーハの加工方法 |
JP7161923B2 (ja) * | 2018-11-21 | 2022-10-27 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP7460322B2 (ja) * | 2018-11-27 | 2024-04-02 | 株式会社ディスコ | ウェーハの加工方法 |
JP7412161B2 (ja) * | 2019-12-23 | 2024-01-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US11482506B2 (en) * | 2020-03-31 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Limited | Edge-trimming methods for wafer bonding and dicing |
JP2022046207A (ja) | 2020-09-10 | 2022-03-23 | キオクシア株式会社 | 半導体装置の製造方法、及び半導体装置 |
KR20230012637A (ko) | 2020-11-19 | 2023-01-26 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 반도체 웨이퍼 프로세싱 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135600A (ja) * | 1999-11-04 | 2001-05-18 | Rohm Co Ltd | 半導体装置の製造方法および研削装置 |
CN102398313A (zh) * | 2010-09-14 | 2012-04-04 | 株式会社迪思科 | 光器件晶片的加工方法 |
CN103594332A (zh) * | 2012-08-15 | 2014-02-19 | 格罗方德半导体公司 | 薄化及/或切粒具有集成电路产品形成于其上的半导体衬底的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005026413A (ja) * | 2003-07-01 | 2005-01-27 | Renesas Technology Corp | 半導体ウエハ、半導体素子およびその製造方法 |
JP5134928B2 (ja) * | 2007-11-30 | 2013-01-30 | 浜松ホトニクス株式会社 | 加工対象物研削方法 |
JP2009283802A (ja) * | 2008-05-26 | 2009-12-03 | Consortium For Advanced Semiconductor Materials & Related Technologies | 半導体装置の製造方法 |
JP5665511B2 (ja) * | 2010-12-10 | 2015-02-04 | 株式会社東芝 | 半導体装置の製造方法、製造プログラム、および製造装置 |
JP2013131652A (ja) * | 2011-12-21 | 2013-07-04 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法、半導体ウェハの加工方法、半導体ウェハ |
KR102072140B1 (ko) * | 2013-06-26 | 2020-02-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
JP6197422B2 (ja) * | 2013-07-11 | 2017-09-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および支持基板付きウェハ |
-
2015
- 2015-09-11 JP JP2015180152A patent/JP6410152B2/ja not_active Expired - Fee Related
-
2016
- 2016-03-01 TW TW105106191A patent/TWI663024B/zh active
- 2016-04-18 CN CN201610239950.9A patent/CN106531625B/zh active Active
- 2016-08-10 US US15/233,920 patent/US20170076969A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135600A (ja) * | 1999-11-04 | 2001-05-18 | Rohm Co Ltd | 半導体装置の製造方法および研削装置 |
CN102398313A (zh) * | 2010-09-14 | 2012-04-04 | 株式会社迪思科 | 光器件晶片的加工方法 |
CN103594332A (zh) * | 2012-08-15 | 2014-02-19 | 格罗方德半导体公司 | 薄化及/或切粒具有集成电路产品形成于其上的半导体衬底的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106531625A (zh) | 2017-03-22 |
US20170076969A1 (en) | 2017-03-16 |
JP2017055089A (ja) | 2017-03-16 |
JP6410152B2 (ja) | 2018-10-24 |
TW201710020A (zh) | 2017-03-16 |
TWI663024B (zh) | 2019-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170809 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220130 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |