CN106463370B - 保护膜形成用薄膜 - Google Patents

保护膜形成用薄膜 Download PDF

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Publication number
CN106463370B
CN106463370B CN201480078687.9A CN201480078687A CN106463370B CN 106463370 B CN106463370 B CN 106463370B CN 201480078687 A CN201480078687 A CN 201480078687A CN 106463370 B CN106463370 B CN 106463370B
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CN
China
Prior art keywords
protective film
film
film formation
formula
epoxy group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480078687.9A
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English (en)
Chinese (zh)
Other versions
CN106463370A (zh
Inventor
稻男洋一
佐伯尚哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Lintec Corp
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Filing date
Publication date
Application filed by Lintec Corp filed Critical Lintec Corp
Publication of CN106463370A publication Critical patent/CN106463370A/zh
Application granted granted Critical
Publication of CN106463370B publication Critical patent/CN106463370B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D303/00—Compounds containing three-membered rings having one oxygen atom as the only ring hetero atom
    • C07D303/02—Compounds containing oxirane rings
    • C07D303/04—Compounds containing oxirane rings containing only hydrogen and carbon atoms in addition to the ring oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Laminated Bodies (AREA)
CN201480078687.9A 2014-07-04 2014-07-04 保护膜形成用薄膜 Active CN106463370B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/067959 WO2016002079A1 (ja) 2014-07-04 2014-07-04 保護膜形成用フィルム

Publications (2)

Publication Number Publication Date
CN106463370A CN106463370A (zh) 2017-02-22
CN106463370B true CN106463370B (zh) 2019-06-21

Family

ID=54595906

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480078687.9A Active CN106463370B (zh) 2014-07-04 2014-07-04 保护膜形成用薄膜

Country Status (4)

Country Link
JP (1) JP5814487B1 (ko)
KR (1) KR102224972B1 (ko)
CN (1) CN106463370B (ko)
WO (1) WO2016002079A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109789666B (zh) * 2017-03-30 2024-06-04 琳得科株式会社 保护膜形成用复合片
CN111417513B (zh) * 2018-03-09 2022-06-03 琳得科株式会社 保护膜形成用复合片及带保护膜的半导体芯片的制造方法
JP7290989B2 (ja) * 2019-04-26 2023-06-14 リンテック株式会社 保護膜形成用複合シート

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102222634A (zh) * 2010-04-19 2011-10-19 日东电工株式会社 半导体背面用切割带集成膜
CN102318059A (zh) * 2009-02-12 2012-01-11 住友电木株式会社 带切割片的半导体保护膜形成用膜、使用该膜的半导体装置的制造方法及半导体装置
CN102981365A (zh) * 2007-09-28 2013-03-20 东京应化工业株式会社 共聚物、树脂组合物、显示板用隔片、平坦化膜、热固性保护膜、微型透镜、以及共聚物的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5180507B2 (ja) * 2007-03-30 2013-04-10 リンテック株式会社 チップ用保護膜形成用シートおよび保護膜付半導体チップ
JP4851434B2 (ja) * 2007-12-18 2012-01-11 古河電気工業株式会社 チップ保護用フィルム
JP5456440B2 (ja) 2009-01-30 2014-03-26 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
JP5666335B2 (ja) * 2011-02-15 2015-02-12 日東電工株式会社 保護層形成用フィルム
JP5792592B2 (ja) * 2011-11-02 2015-10-14 積水化学工業株式会社 半導体装置の製造方法、半導体装置、接着フィルム、及び、接着フィルムの貼り合わせ方法
JP4987161B1 (ja) * 2011-11-24 2012-07-25 積水化学工業株式会社 絶縁材料
JP6117547B2 (ja) * 2012-12-21 2017-04-19 新日鉄住金化学株式会社 熱硬化性組成物、硬化膜及びカラーフィルター
JP2014123743A (ja) * 2013-12-27 2014-07-03 Nitto Denko Corp ダイシングテープ一体型半導体裏面用フィルム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102981365A (zh) * 2007-09-28 2013-03-20 东京应化工业株式会社 共聚物、树脂组合物、显示板用隔片、平坦化膜、热固性保护膜、微型透镜、以及共聚物的制备方法
CN102318059A (zh) * 2009-02-12 2012-01-11 住友电木株式会社 带切割片的半导体保护膜形成用膜、使用该膜的半导体装置的制造方法及半导体装置
CN102222634A (zh) * 2010-04-19 2011-10-19 日东电工株式会社 半导体背面用切割带集成膜

Also Published As

Publication number Publication date
CN106463370A (zh) 2017-02-22
WO2016002079A1 (ja) 2016-01-07
JPWO2016002079A1 (ja) 2017-04-27
KR20170029417A (ko) 2017-03-15
JP5814487B1 (ja) 2015-11-17
KR102224972B1 (ko) 2021-03-08

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