CN107065454A - Eliminate develop in the photo-etching technological process method of residual and the preparation method of display panel - Google Patents
Eliminate develop in the photo-etching technological process method of residual and the preparation method of display panel Download PDFInfo
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- CN107065454A CN107065454A CN201710281256.8A CN201710281256A CN107065454A CN 107065454 A CN107065454 A CN 107065454A CN 201710281256 A CN201710281256 A CN 201710281256A CN 107065454 A CN107065454 A CN 107065454A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a kind of preparation method for the method and display panel for eliminating residual of developing in photo-etching technological process.Eliminating the method for residual of developing in photo-etching technological process includes：Vertical rotary remains the substrate of photoresist, rinses substrate to remove the photoresist remained on substrate by cleaning fluid.The method for residual of developing in the elimination photo-etching technological process that the present invention is provided, in flushing process, substrate carries out vertical rotary, with by causing the photoresist of residual to be completely rinsed in the presence of gravity and flushing ability, the photoresist of residual is not present in the exposure area on substrate after flushing, being normally carried out for subsequent etching processes is ensure that, and then ensure that the performance for the thin film transistor (TFT) being subsequently made, and does not interfere with yield, critical size and electric property.
Description
Technical field
Present document relates to but be not limited to lcd technology, it is espespecially a kind of to eliminate the method for residual of developing in photo-etching technological process
With a kind of preparation method of display panel.
Background technology
There is photoresist residual on development metacoxal plate in some special design structures (such as closed loop, aperture) (because of closed loop
Gap width or aperture bore are too small and cause photoresist to be cleaned in development and part photoetching glue residua occur
The problem of in closed loop or aperture), the photoresist of residual can influence follow-up etching technics (i.e.：Normal etches are unable to, in etching
During form the problems such as residual and short circuit), final influence TFT thin-film transistor performances are, it is necessary to carry out development cleaning (purpose
It is the photoresist for removing residual in the structure such as closed loop or aperture on substrate).
Current TFT-LCD developments cleaning way is divided into two kinds：Horizontal rotation pattern or horizontal spray model (the equal level of plate face
Arrangement), but both development cleaning ways for those special design structures (such as closed loop, aperture) on substrate not
It can get rid of the photoresist of its internal residual well, and with the continuous improvement of design requirement (such as resolution ratio), on substrate
Line width design it is more and more narrow, horizontal rotation and horizontal cleaning showers mode also be difficult to again the glass cleaning after development is clean,
In the presence of development metacoxal plate on exposure area photoetching glue residua the problem of.
The content of the invention
At least one of in order to solve the above-mentioned technical problem, eliminate in photo-etching technological process and develop there is provided herein one kind
The method of residual, the photoresist remained on substrate is rinsed well, it is to avoid photoresist is remained on substrate, and does not influence production
Amount, critical size and electric property.
In order to reach this paper purposes, the method for residual of developing in photo-etching technological process is eliminated the invention provides a kind of, directly
It is vertical to rotate the substrate for remaining photoresist, rinse the substrate to remove the photoresist remained on the substrate by cleaning fluid.
Alternatively, the step of vertical rotary remains the substrate of photoresist includes：It is arranged vertically and remains photoresist
The substrate, then the substrate is entered development rinsing unit, then substrate described in vertical rotary again.
Alternatively, it is described to be arranged vertically the substrate for remaining photoresist, then the substrate is entered development flushing list
The step of member includes：The vertical fixed substrate for remaining photoresist, the substrate is driven by the chuck on chuck
Into the development rinsing unit.
Alternatively, include described in the vertical rotary the step of substrate：The substrate is driven to carry out by motor upright even
Speed rotation.
Alternatively, it is described by cleaning fluid rinse the step of substrate is to remove the photoresist remained on the substrate it
Afterwards, in addition to：The substrate is removed in the development rinsing unit.
Alternatively, it is described the substrate is rinsed by cleaning fluid to be wrapped to remove the step of the photoresist remained on the substrate
Include：The cleaning fluid is sprayed in the oblique upper of the substrate to the substrate, to remove what is remained on the substrate
Photoresist.
Alternatively, the cleaning fluid is in the step of oblique upper of the substrate is sprayed to the substrate, punching
The oblique upper that nozzle inclination is arranged in the substrate is washed, the cleaning fluid sprays from the flooding nozzle and sprayed in the substrate
On.
Alternatively, the cleaning fluid is deionized water.
Alternatively, the substrate is glass substrate.
Present invention also offers a kind of preparation method of display panel, including the elimination photoetching described in any of the above-described embodiment
The method for residual of developing in technical process.
Compared with prior art, the method for residual of developing in the elimination photo-etching technological process that the present invention is provided, flushing process
In, substrate carry out vertical rotary, with by the presence of gravity and flushing ability cause residual photoresist be completely rinsed,
The photoresist of residual is not present in the exposure area on substrate after flushing, it is ensured that subsequent etching processes are normally carried out, and then
The performance for the thin film transistor (TFT) being subsequently made is ensure that, and does not interfere with yield, critical size and electric property.
This paper further feature and advantage will be illustrated in the following description, also, partly be become from specification
It is clear that or by implementing to understand herein.This paper purpose and other advantages can be by specification, claims
And specifically noted structure is realized and obtained in accompanying drawing.
Brief description of the drawings
Accompanying drawing is used for providing further understanding this paper technical schemes, and constitutes a part for specification, with this Shen
Embodiment please is used for the technical scheme for explaining this paper together, does not constitute the limitation to this paper technical schemes.
Fig. 1 is the main structure diagram of heretofore described substrate；
Fig. 2 rinses the structural representation of substrate for cleaning fluid in the present invention.
Wherein, the corresponding relation in Fig. 1 and Fig. 2 between reference and component names is：
1 substrate, 2 flooding nozzles, 3 cleaning fluids, 4 apertures.
Embodiment
For this paper purpose, technical scheme and advantage are more clearly understood, below in conjunction with reality of the accompanying drawing to this paper
Example is applied to be described in detail.It should be noted that in the case where not conflicting, the spy in embodiment and embodiment in the application
Levying mutually to be combined.
Many details are elaborated in the following description in order to fully understand herein, still, can also be adopted herein
It is different from mode described here to implement with other, therefore, this paper protection domain is not by following public specific implementation
The limitation of example.
The method for residual of developing in the elimination photo-etching technological process for describing some embodiments herein below in conjunction with the accompanying drawings and aobvious
Show the preparation method of panel.
The method for residual of developing in the elimination photo-etching technological process that the present invention is provided, (forward or backwards) vertical rotary residual
There is the substrate 1 (as shown in figure 1, arrow represents direction of rotation) of photoresist, the substrate 1 is rinsed to remove by cleaning fluid 3
State the photoresist remained on substrate 1.
In the method for residual of developing in the elimination photo-etching technological process that the present invention is provided, flushing process, substrate 1 is carried out uprightly
Rotation, with by the presence of gravity and flushing ability cause residual photoresist be completely rinsed, on the substrate 1 after flushing
Photoresist of residual is not present in (exposure area), it is ensured that subsequent etching processes are normally carried out, and then ensure that follow-up system
Into thin film transistor (TFT) performance, and do not interfere with yield, critical size and electric property.
Further, the step of vertical rotary remains substrate 1 of photoresist includes：It is arranged vertically and remains photoetching
The substrate 1 of glue, then the substrate 1 is entered development rinsing unit (such as uniform rectilinear or speed change straight line enter development and rinsed
Unit), then vertical rotary (the at the uniform velocity or speed-changing rotation) substrate 1 again, substrate 1 is rinsed in development rinsing unit.
Wherein, substrate 1 can be tilted slightly during arrangement with vertical direction, to meet the requirement of alignment error,
The purpose of the application can be achieved, its objective will not be repeated here without departing from the design philosophy of the present invention, should also belong to the application's
In protection domain.
Yet further, it is described to be arranged vertically the substrate 1 for remaining photoresist, then the substrate 1 is entered development
The step of rinsing unit, includes：The vertical fixed substrate 1 for remaining photoresist, institute is driven by the chuck on chuck
State substrate 1 and enter the development rinsing unit, to realize automation.
Wherein, substrate 1 can be vertically fixed on chuck or fixed manually by operator by manipulator
In the first-class mode of chuck, the purpose of the application can be achieved, its objective is no longer gone to live in the household of one's in-laws on getting married herein without departing from the design philosophy of the present invention
State, all should belong in the protection domain of the application.
Yet further, include described in the vertical rotary the step of substrate 1：The substrate 1 is driven to carry out by motor
Uprightly at the uniform velocity rotate, substrate 1 is uniformly cleaned, capable of washing cleaner of the photoresist of residual.
Can be that chuck is fixed on motor, the mode that motor drives chuck and substrate 1 rotate together etc. can be achieved
The purpose of application, will not be repeated here, and should also belong in protection scope of the present invention.
Alternatively, it is described to rinse the substrate 1 to remove the step of the photoresist remained on the substrate 1 by cleaning fluid 3
After rapid, in addition to：The substrate 1 is removed in the development rinsing unit, so that substrate 1 enters follow-up process (such as：Erosion
Carve etc.), realize continuous production.
Alternatively, it is described to rinse the substrate 1 to remove the step of the photoresist remained on the substrate 1 by cleaning fluid 3
Suddenly include：The cleaning fluid 3 is sprayed (as shown in Figure 2) in the oblique upper of the substrate 1 to the substrate 1, is made a return journey
Except the photoresist remained on the substrate 1, while also disposing the dirts such as the dust adhered on substrate 1.
Cleaning fluid 3 is sprayed in the oblique upper of the substrate 1 to substrate 1, makes cleaning fluid 3 and (such as Fig. 1 of aperture 4
It is shown) or the structure such as closed loop tangentially cleaned, preferably to flush out the photoresist of the inside residual, the photoresist of residual is removed
It is cleaner.
Alternatively, the cleaning fluid 3 is in the step of oblique upper of the substrate 1 is sprayed to the substrate 1,
Flooding nozzle 2 is in tilted layout in the oblique upper (as shown in Figure 2) of the substrate 1, and the cleaning fluid 3 sprays from the flooding nozzle 2
Go out and spray on the substrate 1.
Certainly, flooding nozzle 2 can also tilt the obliquely downward for being unlikely to substrate 1, or carry out vertical cleaning to substrate 1,
The elimination effect of the photoresist of residual is also preferable, can equally realize the purpose of the application, and its objective is set without departing from the present invention's
Thought is counted, will not be repeated here, all should belong in the protection domain of the application.
Preferably, the cleaning fluid 3 is deionized water etc., and the substrate 1 is glass substrate etc., and label 4 is aperture.
The preparation method for the display panel that the present invention is provided, including the elimination photoetching process mistake described in any of the above-described embodiment
The method for residual of developing in journey.
The preparation method for the display panel that the present invention is provided, including the elimination photoetching process mistake described in any of the above-described embodiment
The all advantages of the method for residual of developing in journey, will not be repeated here；And the physical dimension precision after etching is higher, follow-up system
Into thin film transistor (TFT) performance it is more preferable
In summary, in the method for residual of developing in the elimination photo-etching technological process that the present invention is provided, flushing process, substrate
Carry out vertical rotary, with by the presence of gravity and flushing ability cause residual photoresist be completely rinsed, after flushing
Substrate on exposure area the photoresist of residual is not present, it is ensured that subsequent etching processes are normally carried out, and then ensure that
The performance for the thin film transistor (TFT) being subsequently made, and do not interfere with yield, critical size and electric property.
In description herein, term " installation ", " connected ", " connection ", " fixation " etc. all should be interpreted broadly, for example,
" connection " can be fixedly connected or be detachably connected, or be integrally connected；Can be joined directly together, can also lead to
Intermediary is crossed to be indirectly connected to.For the ordinary skill in the art, above-mentioned term can be understood as the case may be
Concrete meaning herein.
In the description of this specification, the description of term " one embodiment ", " some embodiments ", " specific embodiment " etc.
Specific features, structure, material or the feature meant with reference to the embodiment or example description is contained in this paper at least one implementation
In example or example.In this manual, identical embodiment or example are not necessarily referring to the schematic representation of above-mentioned term.
Moreover, specific features, structure, material or the feature of description can be in any one or more embodiments or example with suitable
Mode combine.
Although embodiment disclosed herein is as above, described content is only the implementation for readily appreciating and using herein
Mode, is not limited to herein.Technical staff in any this paper arts, do not depart from spirit disclosed herein and
On the premise of scope, any modification and change, but this paper patent protection model can be carried out in the form and details of implementation
Enclose, still should be subject to the scope of the claims as defined in the appended claims.
Claims (10)
1. a kind of method for eliminating residual of developing in photo-etching technological process, it is characterised in that vertical rotary remains photoresist
Substrate, rinses the substrate to remove the photoresist remained on the substrate by cleaning fluid.
2. the method according to claim 1 for eliminating residual of developing in photo-etching technological process, it is characterised in that described upright
The step of rotation remains the substrate of photoresist includes：
The substrate for remaining photoresist is arranged vertically, then the substrate is entered development rinsing unit, then upright rotation again
Turn the substrate.
3. the method according to claim 2 for eliminating residual of developing in photo-etching technological process, it is characterised in that described vertical
Arrangement remains the substrate of photoresist, then includes the step of substrate is into development rinsing unit：
The vertical fixed substrate for remaining photoresist on chuck, drives the substrate to enter described aobvious by the chuck
Shadow rinsing unit.
4. the method according to claim 2 for eliminating residual of developing in photo-etching technological process, it is characterised in that described upright
The step of rotating the substrate includes：
The substrate is driven uprightly at the uniform velocity rotate by motor.
5. the method according to claim 2 for eliminating residual of developing in photo-etching technological process, it is characterised in that described to pass through
Cleaning fluid is rinsed after the step of substrate is to remove the photoresist remained on the substrate, in addition to：
The substrate is removed in the development rinsing unit.
6. the method according to claim 1 for eliminating residual of developing in photo-etching technological process, it is characterised in that described to pass through
Cleaning fluid rinses the substrate to be included to remove the step of the photoresist remained on the substrate：
The cleaning fluid is sprayed in the oblique upper of the substrate to the substrate, to remove what is remained on the substrate
Photoresist.
7. the method according to claim 6 for eliminating residual of developing in photo-etching technological process, it is characterised in that the cleaning
Liquid is in the step of oblique upper of the substrate is sprayed to the substrate, and flooding nozzle is in tilted layout in the substrate
Oblique upper, the cleaning fluid sprays from the flooding nozzle and sprays on the substrate.
8. the method according to any one of claim 1 to 7 for eliminating residual of developing in photo-etching technological process, its feature exists
In the cleaning fluid is deionized water.
9. the method according to any one of claim 1 to 7 for eliminating residual of developing in photo-etching technological process, its feature exists
In the substrate is glass substrate.
10. a kind of preparation method of display panel, it is characterised in that include and disappear as claimed in any one of claims 1-9 wherein
Except the method for residual of developing in photo-etching technological process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710281256.8A CN107065454A (en) | 2017-04-26 | 2017-04-26 | Eliminate develop in the photo-etching technological process method of residual and the preparation method of display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710281256.8A CN107065454A (en) | 2017-04-26 | 2017-04-26 | Eliminate develop in the photo-etching technological process method of residual and the preparation method of display panel |
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| Publication Number | Publication Date |
|---|---|
| CN107065454A true CN107065454A (en) | 2017-08-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710281256.8A Pending CN107065454A (en) | 2017-04-26 | 2017-04-26 | Eliminate develop in the photo-etching technological process method of residual and the preparation method of display panel |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110769608A (en) * | 2019-11-11 | 2020-02-07 | 江苏上达电子有限公司 | Method and equipment for quickly removing residual copper at two ends of COF substrate |
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|---|---|---|---|---|
| CN101928927A (en) * | 2009-06-18 | 2010-12-29 | 和舰科技(苏州)有限公司 | Device and method for implanting ions |
| CN204422971U (en) * | 2015-02-13 | 2015-06-24 | 河源西普电子有限公司 | A kind of without hydrops spraying development apparatus |
| WO2016181791A1 (en) * | 2015-05-11 | 2016-11-17 | 富士フイルム株式会社 | Image developing device, image developing method, pattern forming device, and pattern forming method |
-
2017
- 2017-04-26 CN CN201710281256.8A patent/CN107065454A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101928927A (en) * | 2009-06-18 | 2010-12-29 | 和舰科技(苏州)有限公司 | Device and method for implanting ions |
| CN204422971U (en) * | 2015-02-13 | 2015-06-24 | 河源西普电子有限公司 | A kind of without hydrops spraying development apparatus |
| WO2016181791A1 (en) * | 2015-05-11 | 2016-11-17 | 富士フイルム株式会社 | Image developing device, image developing method, pattern forming device, and pattern forming method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110769608A (en) * | 2019-11-11 | 2020-02-07 | 江苏上达电子有限公司 | Method and equipment for quickly removing residual copper at two ends of COF substrate |
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Application publication date: 20170818 |