CN106256923B - Film formation device, film build method and substrate-placing platform - Google Patents
Film formation device, film build method and substrate-placing platform Download PDFInfo
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- CN106256923B CN106256923B CN201610425922.6A CN201610425922A CN106256923B CN 106256923 B CN106256923 B CN 106256923B CN 201610425922 A CN201610425922 A CN 201610425922A CN 106256923 B CN106256923 B CN 106256923B
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- peripheral ring
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 42
- 230000033228 biological regulation Effects 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 238000007740 vapor deposition Methods 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 18
- 229920002396 Polyurea Polymers 0.000 claims description 13
- 238000006116 polymerization reaction Methods 0.000 claims description 13
- 230000002401 inhibitory effect Effects 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 4
- 230000005764 inhibitory process Effects 0.000 claims description 2
- 208000032825 Ring chromosome 2 syndrome Diseases 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 10
- 230000001105 regulatory effect Effects 0.000 description 61
- 239000007789 gas Substances 0.000 description 45
- 208000033641 Ring chromosome 5 syndrome Diseases 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 3
- 125000005442 diisocyanate group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000028016 temperature homeostasis Effects 0.000 description 2
- 239000006091 Macor Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Abstract
A kind of film formation device of present invention offer, film build method and substrate-placing platform.Uniform film can be formed, and can only form film on substrate.The process chamber and processing gas feed mechanism that film formation device has substrate-placing platform, implements film process to substrate.Substrate-placing platform includes：Its upper surface becomes the mounting portion of the mounting surface of mounting substrate；The peripheral ring being arranged in a manner of the periphery for surrounding mounting portion；1st temperature regulation section of the 1st temperature that the temperature of mounting portion is adjusted to form a film using processing gas；The temperature of peripheral ring can be adjusted to the 2nd temperature regulation section of the 2nd temperature that can not be formed a film using processing gas, between mounting portion and peripheral ring, complete cycle it is provided with the gap functioned as insulation, mounting surface forms smaller than substrate, and gap is formed in a manner of being taken in peripheral ring beyond part complete cycle of substrate when substrate is placed into mounting surface.
Description
Technical field
The film formation device of film, film build method are formed the present invention relates to processing gas is supplied to substrate and for forming a film
The substrate-placing platform of device.
Background technology
Organic material film has been used in sealant for organic EL display device etc..It is known that there are as below methods：It is manufacturing
When such organic material film, so that Organic Ingredients is evaporated using gasifier etc. and supplied into film forming room, make them on substrate
Vapor deposition polymerize and forms organic film (such as patent document 1).
Existing technical literature
Patent document
Patent document 1：No. 4283910 bulletins of Japanese Patent
Invention content
Problems to be solved by the invention
But, in the case where being aggregated in formation organic material film on the substrate of large area using vapor deposition, it is difficult to equably
It forms a film.In addition, forming film handling the indoor part other than substrate, it is shorter in this way that accordingly, there exist maintenance periods
The problem of.
This problem is not limited to the case where forming organic material film using vapor deposition polymerization, is handled to process chamber supply
Gas also largely exists in the case of carrying out film process.
Thus, the object of the present invention is to provide a kind of film formation device, film build method and it is used for such film formation device
Substrate-placing platform, wherein supply processing gas and when being formed a film on substrate, uniform film can be formed, and can
Film is only formed on substrate.
The solution to the problem
To solve the above-mentioned problems, the present invention provides a kind of film formation device comprising：Substrate-placing platform is used to load
Substrate；Process chamber is used to implement film process to the substrate for being placed on the substrate-placing platform；Processing gas supply part,
It is used to supply the processing gas of film process to the process chamber, and the film formation device is to the substrate on the substrate-placing platform
Implement film process, which is characterized in that the substrate-placing platform includes：Mounting portion, upper surface become for loading substrate
Mounting surface；Peripheral ring is arranged in a manner of surrounding the periphery of the mounting portion；1st temperature regulation section is used for the load
The temperature for setting portion is adjusted to the 1st temperature to form a film using the processing gas；2nd temperature regulation section, be used for by
The temperature of the peripheral ring is adjusted to the 2nd temperature that can not be formed a film using the processing gas, in the mounting portion and institute
Between stating peripheral ring, complete cycle it is provided with as the insulation for inhibiting the heat exchange between the mounting portion and the peripheral ring
The mounting surface in the gap functioned, the mounting portion forms smaller than the substrate, and the gap is in the substrate
When being placed on the mounting surface substrate exceed from the mounting surface taken in the peripheral ring beyond part complete cycle
Mode is formed.
In addition, the present invention provides a kind of substrate-placing platform, it is used to supply processing gas and film process is implemented to substrate
Film formation device, which is characterized in that the substrate-placing platform includes：Mounting portion, upper surface become the mounting for loading substrate
Face；Peripheral ring is arranged in a manner of surrounding the periphery of the mounting portion；1st temperature regulation section, by the temperature of the mounting portion
Degree is adjusted to the 1st temperature to form a film using the processing gas；2nd temperature regulation section, by the peripheral ring
Temperature is adjusted to the 2nd temperature that can not be formed a film using the processing gas, between the mounting portion and the peripheral ring,
It is provided with to complete cycle as between for inhibiting the insulation of the heat exchange between the mounting portion and the peripheral ring to function
The mounting surface of gap, the mounting portion forms smaller than the substrate, and the gap is in the substrate-placing to the load
The mode taken beyond part complete cycle in the peripheral ring of the substrate exceeded from the mounting surface is formed when setting face.
Moreover, the present invention provides a kind of film build method, using film formation device in substrate-placing to load in the film build method
It sets and supplies processing gas to process chamber and film process are implemented to substrate in the state of portion, the film formation device is in the process chamber
Configured with substrate-placing platform, which includes：The mounting portion, upper surface become the mounting for loading substrate
Face；Peripheral ring, to be wrapped across as the gap for inhibiting the insulation in its heat exchange between the mounting portion to function
It is arranged with enclosing the mode complete cycle of the periphery of the mounting portion, which is characterized in that, which has following work
Sequence：The substrate by complete cycle is covered to the gap and takes the work for being placed in the mounting surface in a manner of the peripheral ring
Sequence；The process for the 1st temperature that the temperature of the mounting portion is adjusted to form a film using the processing gas；It will be described
The temperature of peripheral ring is adjusted to can not be using the process for the 2nd temperature that the processing gas forms a film.
It can be set as such as lower structure：The substrate-placing platform has matrix, central portion of the mounting portion from described matrix
It is protrusively provided upward, the peripheral ring is set to described matrix across heat-insulating material.
Preferably, the width beyond part of the substrate when the substrate-placing is to the mounting surface is unused
Below the width for making the region of product.In this case, the width beyond part can be set as and be less than 10mm, the gap
Width be 1mm~9mm.Preferably, the width beyond part is 5mm less than 10mm, the width in the gap
Degree is 3mm~5mm.
Can also be also to have：Upper lid is arranged in a manner of covering the substrate-placing platform, is formed for dividing
The process chamber；3rd temperature regulation section, by the temperature of the upper lid be adjusted to can not using the processing gas carry out at
3rd temperature of film.
It can be set as, also there is the spraying component being arranged in a manner of opposite with the mounting surface, it will be from the processing gas
The processing gas that the supply of body supply part comes is sprayed from the spraying component.
Using organic system gas as the processing gas, can on the substrate be formed by vapor deposition polymerization organic
Film.In this case, it can be set as, the organic film is polyurea film, is adjusted into trip temperature using the 1st temperature regulation section,
So that the 1st temperature of the mounting portion become 100 DEG C hereinafter, using the 2nd temperature regulation section into trip temperature adjust, with
The 2nd temperature of the peripheral ring is set to become 150 DEG C or more.
The effect of invention
According to the present invention, the 1st temperature that the temperature of mounting portion is adjusted to form a film using processing gas will be outer
The temperature of chow ring is adjusted to the 2nd temperature that can not be formed a film using processing gas, therefore, it is possible to only form film on substrate.
In addition, between mounting portion and peripheral ring, it is provided with as inhibiting the heat exchange between mounting portion and peripheral ring to complete cycle
The gap that insulation functions, therefore, it is possible to prevent from directly transmitting from periphery circumferential direction mounting portion heat.Therefore, it is possible to load
The temperature in portion controls the state in the heat affecting for inhibiting peripheral ring, but the temperature of substrate can be made uniformly to be formed uniform
Film.In addition, keeping the upper surface of peripheral ring concordant with mounting surface, mounting surface is made to be configured smaller than substrate, moreover, gap is set as
Substrate-placing to substrate when mounting surface peripheral part complete cycle take the size as the upper surface of peripheral ring, therefore, gap quilt
Substrate covers, and can prevent processing gas from entering in gap.
Description of the drawings
Fig. 1 is the sectional view for the film formation device for indicating one embodiment of the present invention.
Fig. 2 is the vertical view of the thermoregulation mechanism for the film formation device for schematically showing Fig. 1.
Fig. 3 is the sectional view for indicating the partial enlargement of the substrate-placing platform of the film formation device of Fig. 1.
Reference sign
1, substrate-placing platform；2, upper lid；3, matrix；4, mounting portion；5, peripheral ring；6, gap；7, heat-insulating material；8, empty
Between；9, shower plate；10, process chamber；13, processing gas feed mechanism；16, exhaust gear；17,18,19, temperature regulating medium stream
Road；20, temperature regulating medium feed unit；25, control unit；100, film formation device；G, substrate.
Specific implementation mode
Hereinafter, the embodiments of the present invention will be described with reference to the drawings.
Fig. 1 is the sectional view for the film formation device for indicating one embodiment of the present invention, and Fig. 2 schematically shows Fig. 1
The vertical view of the thermoregulation mechanism of film formation device.
Film formation device 100 has：Substrate-placing platform 1 is used to load substrate G；Upper lid 2 is used to divide to be formed and use
In the process chamber for carrying out film process to the substrate G for being placed on substrate-placing platform 1.
Substrate-placing platform 1 has：Plate-like matrix 3；It is arranged in such a way that the central portion from matrix 3 is outstanding upward
Column and its upper surface become the mounting portion 4 of the mounting surface 4a for loading substrate G；It is set to matrix 3 across heat-insulating material 7
Peripheral ring 5 around mounting portion 4.The mounting surface 4a for forming the upper surface of mounting portion 4 forms smaller than substrate G.In this example,
Substrate G and mounting surface 4a rectangular shapeds.
Peripheral ring 5 is arranged in a manner of surrounding the periphery of mounting portion 4 across gap 6, in the shape of a frame.Gap 6 is outer as inhibition
The insulation of heat exchange between chow ring 5 and mounting portion 4 functions.The upper surface of peripheral ring 5 is concordant with mounting surface 4a.
When substrate G is placed on mounting surface 4a, what peripheral part as complete cycle exceeded from mounting surface 4a exceeds part,
The size of gap 6 crosses gap 6 beyond part as substrate G and reaches the upper surface of peripheral ring 5, takes to complete cycle in peripheral ring 5
Upper surface as size.Thus, when substrate G is placed on mounting surface 4a, gap 6 is covered by substrate G.
Heat-insulating material 7 is in frame-shaped corresponding with peripheral ring 5, and inner peripheral surface and the periphery of mounting portion 4 are placed in contact with.It is adiabatic
Material 7 is arranged to make between peripheral ring 5 and matrix 3 adiabatic, can it is preferable to use talcum, MACOR (registered trademark)
Such lower ceramic material of thermal coefficient.In addition, the periphery of peripheral ring 5 and heat-insulating material 7 has reached the periphery of matrix 3
Position.
As shown in the enlarged drawing of Fig. 3, the width D 1 beyond part exceeded from the mounting surface 4a of substrate G is set as technology ensuring
Outside and it is not used as the width in region of product or less.The width in the region outside the technology ensuring is typically 10mm or so, therefore,
In this case, it is preferred that the width beyond part is less than 10mm.In addition, the width beyond part of the width D 2 in gap 6 and substrate G
D1 correspondingly changes, and in the case where the width D 1 beyond part is less than 10mm, the width D 2 in gap 6 is 1mm~9mm or so.
Preferably, the width D 1 beyond part of substrate G is 5mm less than 10mm, and the width D 2 in gap is 3mm~5mm.
There is upper lid 2 side wall 2a and roof 2b, side wall 2a to be supported on air-tight state across containment member (not shown)
The upper surface of peripheral ring 5.Space 8 is provided with shower plate 9 in the lower section of roof 2b, is surrounded by side wall 2a and shower plate 9
Part becomes process chamber 10.In addition it is also possible to be set as directly supporting the construction of upper lid 2 by matrix 3.In this case, periphery
Ring 5 and heat-insulating material 7 are formed than the periphery of matrix 3 in a manner of in the inner part by their periphery.
Be formed with the gas introducing port 11 for reaching space 8 in the center of roof 2b, gas introducing port 11 via piping 12 with
Processing gas feed mechanism 13 connects.Also, the processing gas from processing gas feed mechanism 13 reaches empty via piping 12
Between 8, sprayed from many a gas ejection hole 9a for being set to shower plate 9 into process chamber 10.Gas ejection hole 9a both can be equal
It is configured at the region opposite with substrate G of shower plate 9 evenly, configures while specific pattern can also be described.
By so supplying processing gas into process chamber 10, scheduled film is formed on substrate G.At this point, by from
Process gases feed mechanism 13 uses scheduled organic system gas as processing gas, vapor deposition can be utilized to be aggregated in shape on substrate G
At organic film.It is formed by organic film as using vapor deposition polymerization, as representative, polyurea film can be enumerated.Forming polyureas
When film, processing gas is supplied with the state for making diisocyanate and diamine gasify using gasifier etc..Thereby, it is possible to make them
Vapor deposition polymerize and forms polyurea film on substrate G.
It is formed with exhaust outlet 14 in the lower part of the side wall 2a of upper lid 2, exhaust outlet 14 is connect with exhaust piping 15.It is being vented
It is provided with the exhaust gear 16 being made of vacuum pump and pressure-control valve etc. in piping 15, can will be kept into process chamber 10
Scheduled vacuum atmosphere.In the case where forming polyurea film by diisocyanate and diamine, by the pressure control in process chamber 10
10Torr (1333Pa) is made hereinafter, being controlled preferably to 0.2Torr~2.0Torr (26.7Pa~266Pa).
In addition, although not shown, but it is formed with the input/output port for input and output substrate G in the side wall 2a of upper lid 2,
The input/output port can be opened and closed by switching mechanisms such as gate valves.
Be internally provided with the 1st temperature regulating medium flow path 17 in mounting portion 4, by make the 1st temperature regulating medium to this
1st temperature regulating medium flow path 17 circulates, the temperature of mounting portion 4 to be adjusted.It is carried out using the 1st temperature regulating medium
Temperature is adjusted, so that the substrate G for being placed on mounting surface 4a becomes the 1st temperature T1 that can be formed a film.It is formed using vapor deposition polymerization
In the case of organic film, needing the 1st temperature T1 is formed using vapor deposition polymerization as low as the temperature for the degree that can be deposited
In the case of polyurea film, the 1st temperature T1 is controlled so as to that 100 DEG C or less of vapor deposition polymerization can be carried out, is preferably 50 DEG C~100
℃。
Be internally provided with the 2nd temperature regulating medium flow path 18 in peripheral ring 5, by make the 2nd temperature regulating medium to this
2nd temperature regulating medium flow path 18 circulates, the temperature of peripheral ring 5 to be adjusted.It will be outer using the 2nd temperature regulating medium
The temperature of chow ring 5 is adjusted to that the 2nd temperature T2 of film can not be formed on its surface.The case where forming organic film using vapor deposition polymerization
Under, need the 2nd temperature T2 to be up to the temperature for the degree that can not be deposited, using vapor deposition polymerization form polyurea film in the case of into
Trip temperature is adjusted so that the temperature of peripheral ring 5 become can not carry out vapor deposition 150 DEG C or more of polymerization, be preferably 150 DEG C~
180℃。
It is provided with the 3rd temperature regulating medium flow path 19 on the roof 2b of upper lid 2, by making the 3rd temperature regulating medium
It circulates to the 3rd temperature regulating medium flow path 19, the temperature of upper lid 2 to be adjusted.Utilize the 3rd temperature regulating medium
It is adjusted into trip temperature, so that upper lid 2 becomes the 3rd temperature T3 that can not form film in its inner wall.It is formed using vapor deposition polymerization
In the case of organic film, the 3rd temperature T3 needs the temperature for the degree for being up to not to be deposited, and is formed using vapor deposition polymerization
In the case of polyurea film, the temperature of upper lid 2 is controlled so as to effectively form 150 DEG C of film or more, preferably 150 DEG C
~180 DEG C.
From temperature regulating medium feed unit 20 respectively to the 1st~the 3rd temperature regulating medium flow path 17~19 supply the 1st~
3rd temperature regulating medium.Temperature regulating medium feed unit 20 has the 1st temperature regulating medium to the 1st temperature regulating medium
The 1st temperature regulating medium supply unit (CH1) 20a that flow path 17 supplies, by the 2nd temperature regulating medium to the 2nd temperature regulating medium
The 2nd temperature regulating medium supply unit (CH2) 20b that flow path 18 supplies, by the 3rd temperature regulating medium to the 3rd temperature regulating medium
The 3rd temperature regulating medium supply unit (CH3) 20c that flow path 19 supplies.
1st temperature regulating medium supply unit (CH1) 20a supplies the adjusting of the 1st temperature with to the 1st temperature regulating medium flow path 17
The supplying tubing 21a of medium, the return piping 21b (figures that the 1st temperature regulating medium is returned from the 1st temperature regulating medium flow path 17
2) it connects, the 1st temperature regulating medium is recycled to the 1st temperature regulating medium flow path 17 and is supplied.It is situated between in addition, the 1st temperature is adjusted
Matter supply unit (CH1) 20a controls the temperature of the 1st temperature regulating medium at the 1st temperature T1.
2nd temperature regulating medium supply unit (CH2) 20b supplies the adjusting of the 2nd temperature with to the 2nd temperature regulating medium flow path 18
The supplying tubing 22a of medium, the return piping 22b (figures that the 2nd temperature regulating medium is returned from the 2nd temperature regulating medium flow path 18
2) it connects, the 2nd temperature regulating medium is recycled to the 2nd temperature regulating medium flow path 18 and is supplied.It is situated between in addition, the 2nd temperature is adjusted
Matter supply unit (CH2) 20b controls the temperature of the 2nd temperature regulating medium at the 2nd temperature T2.
3rd temperature regulating medium supply unit (CH3) 20c supplies the adjusting of the 3rd temperature with to the 3rd temperature regulating medium flow path 19
The supplying tubing 23a of medium, the return piping 23b (figures that the 3rd temperature regulating medium is returned from the 3rd temperature regulating medium flow path 19
2) it connects, the 3rd temperature regulating medium is recycled to the 3rd temperature regulating medium flow path 19 and is supplied.It is situated between in addition, the 3rd temperature is adjusted
Matter supply unit (CH3) 20c controls the temperature of the 3rd temperature regulating medium at the 3rd temperature T3.
In addition, temperature regulating medium feed unit 20 can also be opposite 2nd temperature regulating medium flow path 18 and the 3rd temperature
The temperature regulating medium for adjusting 19 supply of medium flow path carries out temperature controlled unit together.In addition, in Fig. 1,2, schematically
The the 1st~the 3rd temperature regulating medium flow path 17~19 is described on ground, actually their temperature to be adjusted to the side of scheduled temperature
Formula is configured to proper shape.
Film formation device 100 has the control unit 25 controlled for each constituting portion to film formation device 100.Control unit 25
With microprocessor (computer), to processing gas feed mechanism 13, exhaust gear 16, temperature regulating medium feed unit 20
Etc. being controlled.Control unit 25 executes scheduled processing processing procedure, has and stores the promising control executed needed for scheduled processing processing procedure
Parameter processed, storage part, input part and the display etc. for handling processing procedure.
In thus configured film formation device 100, it will be transported in process chamber 10 from substrate input/output port (not shown)
Substrate G the mounting surface 4a of mounting portion 4 is placed in a manner of taking in external rings 5 with covering gap 6 and complete cycle, utilize air exhauster
Structure 16 will be kept into scheduled vacuum state in process chamber 10.Then, by from temperature regulating medium feed unit 20 to the 1st temperature
Degree adjusts medium flow path 17, the 2nd temperature regulating medium flow path 18, the 3rd temperature regulating medium flow path 19 and is supplied respectively to the 1st temperature tune
Medium, the 2nd temperature regulating medium, the 3rd temperature regulating medium are saved, the temperature of mounting portion 4 is adjusted to the 1st temperature of film forming
The temperature of peripheral ring 5 and upper lid 2 is adjusted to the 2nd temperature T2 and the 3rd temperature T3 that can not form a film by T1 respectively.In addition,
2nd temperature T2 and the 3rd temperature T3 can also be identical.
In this state, it is supplied into process chamber 10 from processing gas feed mechanism 13 via piping 12 and shower plate 9
Processing gas forms scheduled film on the surface of substrate G.
For example, as processing gas, using scheduled organic system gas, vapor deposition can be utilized to be aggregated on substrate and be formed with
Machine film.Polyurea film is formed as in the case of organic film polymerizeing using vapor deposition, is by the pressure control in process chamber 10
10Torr (1333Pa) is hereinafter, be preferably controlled to 0.2Torr~2.0Torr (26.7Pa~266Pa), as processing gas,
It is supplied to process chamber 10 in the state of so that diisocyanate and diamine has been gasified using gasifier etc., makes them on substrate G
Vapor deposition polymerization.
In this case, the 1st temperature T1 as the temperature of mounting portion 4 is the temperature as low as the degree that can be deposited
Degree, in the case where forming polyurea film, 100 DEG C are adjusted to hereinafter, excellent using the 1st temperature regulating medium by the temperature of mounting portion 4
Select 50 DEG C~100 DEG C.On the other hand, the 3rd of the temperature as the 2nd temperature T2 of the temperature of peripheral ring 5 and as upper lid 2
Temperature T3 is up to the temperature for the degree that can not be deposited, and in the case where forming polyurea film, is utilized respectively the adjusting of the 2nd temperature
The temperature of peripheral ring 5 and upper lid 2 is adjusted to 150 DEG C or more by medium and the 3rd temperature regulating medium, preferably 150 DEG C~
180℃。
Thereby, it is possible to only form a film on the surface of substrate G, the periphery in the periphery for being set to mounting portion 4 can be inhibited
The surface of ring 5, the inner wall of upper lid 2 form film.
But, the case where the mounting portion 4 and 5 temperature of peripheral ring that so will abut against are adjusted to respectively different temperature respectively
Under, if mounting portion 4 and peripheral ring 5 contact, mounting portion 4 is easy to exchange heat with peripheral ring 5, the temperature control of mounting portion 4
It reduces, it is difficult to uniform film is formed on substrate G.Especially, if substrate G enlargements, tendency become apparent.
In contrast, in the present embodiment, in the mounting portion 4 including mounting surface 4a and being provided with work between peripheral ring 5
For the gap 6 of insulation, it is therefore possible to prevent directly carrying out hot transmission from peripheral ring 5 to mounting portion 4.Especially, gap 6 reaches
Top makes mounting surface 4a and the upper surface of peripheral ring 5 effectively completely cut off, thus mutual temperature will not generate between them it is dry
It relates to.Moreover, inhibiting to transmit to the heat of mounting portion 4 from peripheral ring 5 via the matrix 3 of substrate-placing platform 1 using heat-insulating material 7.
Therefore, it is possible to control the temperature of mounting portion 4 in the state of inhibiting the heat affecting from peripheral ring 5, the temperature of substrate G can be made
Degree uniformly forms uniform film.
In addition, in the case where being provided with such gap 6, if processing gas enters gap 6, there are following bad feelings
Condition：Insulation effect can not be obtained by film forming as the reason of particle or gap 6 is interior, but in the present embodiment, make peripheral ring
5 upper surface is concordant with mounting surface 4a, and the mounting surface 4a as the upper surface of mounting portion 4 is made to be configured smaller than substrate G, and
And the slave mounting surface 4a that the size in gap 6 is set as to the substrate G when substrate G is placed on mounting surface 4a exceed exceed part
The size as the upper surface of peripheral ring 5 is taken to complete cycle, therefore, it is possible to prevent such unfavorable condition.I.e., on by being set as
Such structure is stated, when substrate G is placed on mounting surface 4a, part is exceeded existing for the complete cycle in mounting surface 4a of substrate G
It takes in peripheral ring 5, to which gap 6 is shielded, can prevent processing gas from entering in gap 6.
Moreover, substrate G outer peripheral portion there are technology ensuring outside and be not used as the region of product, therefore, as long as will surpass
The width D 1 for going out part is set as the width in the region hereinafter, the yield rate of product will not then reduced.
The width in the region outside technology ensuring is typically 10mm or so, it is therefore preferable that the width D 1 beyond part is less than
10mm.In addition, the width D 2 in gap 6 and the width D 1 beyond part of substrate G correspondingly change, in the width D 1 beyond part
In the case of 10mm, the width D 2 in gap 6 is 1mm~9mm or so.In addition, between mounting table 4 and peripheral ring 5
From the viewpoint of insulation effect, the width D 2 in gap 6 there is also preferred range, it is comprehensive these, then preferable substrate G exceeds portion
Point width D 1 be 5mm less than 10mm, the width D 2 in gap is 3mm~5mm.
In addition, the present invention is not limited to the above embodiment, various modifications can be carried out.For example, in above-mentioned embodiment party
In formula, following situation is shown：Substrate is aggregated in using vapor deposition as processing gas by using scheduled organic system gas
The case where upper formation organic film, the case where especially forming polyurea film, but it is not limited to this, can be applied to make such as CVD
The whole circumstances to be formed a film with processing gas.
In addition, in the above-described embodiment, show using temperature regulating medium to mounting portion, peripheral ring etc. into trip temperature
The case where adjusting, but it is self-evident, other temperature controlling units such as resistance type heater can also be used.
Moreover, in the above-described embodiment, the case where shape to the mounting surface of substrate and mounting portion is rectangular shape
It is illustrated, but is certainly not limited to this.
Claims (15)
1. a kind of film formation device comprising：
Substrate-placing platform is used to load substrate；
Process chamber is used to implement film process to the substrate for being placed on the substrate-placing platform；
Processing gas supply part is used to supply the processing gas of film process, the film formation device pair to the process chamber
Substrate on the substrate-placing platform implements film process, which is characterized in that
The substrate-placing platform includes：
Mounting portion, upper surface become the mounting surface for loading substrate；
Peripheral ring is arranged in a manner of surrounding the periphery of the mounting portion；
1st temperature regulation section is used to be adjusted to form a film using the processing gas by the temperature of the mounting portion
The 1st temperature；
2nd temperature regulation section is used to be adjusted to not form a film using the processing gas by the temperature of the peripheral ring
The 2nd temperature,
Between the mounting portion and the peripheral ring, it is provided with as inhibiting the mounting portion and the periphery to complete cycle
The gap that the insulation of heat exchange between ring functions,
The mounting surface of the mounting portion forms smaller than the substrate, and the gap is in the substrate-placing to the load
The mode taken beyond part complete cycle in the peripheral ring of the substrate exceeded from the mounting surface is formed when setting face.
2. film formation device according to claim 1, which is characterized in that
The substrate-placing platform has matrix, and the mounting portion is protrusively provided upward from the central portion of described matrix, described
Peripheral ring is set to described matrix across heat-insulating material.
3. film formation device according to claim 1 or 2, which is characterized in that
The width beyond part of the substrate when the substrate-placing is to the mounting surface is the region for being not used as product
Width below.
4. film formation device according to claim 3, which is characterized in that
The width beyond part is less than 10mm, and the width in the gap is 1mm~9mm.
5. film formation device according to claim 4, which is characterized in that
The width beyond part is 5mm less than 10mm, and the width in the gap is 3mm~5mm.
6. film formation device according to claim 1 or 2, which is characterized in that
The film formation device also has：Upper lid is arranged in a manner of covering the substrate-placing platform, for dividing described in formation
Process chamber；3rd temperature regulation section, be used for by the temperature of the upper lid be adjusted to can not using the processing gas carry out at
3rd temperature of film.
7. film formation device according to claim 1 or 2, which is characterized in that
The film formation device also has the spraying component being arranged in a manner of opposite with the substrate-placing face, will be from the processing gas
The processing gas that the supply of body supply part comes is sprayed from the spraying component.
8. film formation device according to claim 1 or 2, which is characterized in that
As the processing gas, using organic system gas, organic film is formed on the substrate using vapor deposition polymerization.
9. film formation device according to claim 8, which is characterized in that
The organic film is polyurea film, is adjusted into trip temperature using the 1st temperature regulation section, so that the mounting portion is described
1st temperature becomes 100 DEG C hereinafter, being adjusted into trip temperature using the 2nd temperature regulation section, so that described the of the peripheral ring
2 temperature become 150 DEG C or more.
10. a kind of substrate-placing platform, it is used to supply processing gas and implements the film formation devices of film process to substrate, feature
It is,
The substrate-placing platform includes：
Mounting portion, upper surface become the mounting surface for loading substrate；
Peripheral ring is arranged in a manner of surrounding the periphery of the mounting portion；
The temperature of the mounting portion is adjusted to the form a film using the processing gas the 1st by the 1st temperature regulation section
Temperature；
The temperature of the peripheral ring is adjusted to the can not form a film using the processing gas the 2nd by the 2nd temperature regulation section
Temperature,
Between the mounting portion and the peripheral ring, it is provided with as inhibiting the mounting portion and the periphery to complete cycle
The gap that the insulation of heat exchange between ring functions,
The mounting surface of the mounting portion forms smaller than the substrate, and the gap is in the substrate-placing to the load
The mode taken beyond part complete cycle in the peripheral ring of the substrate exceeded from the mounting surface is formed when setting face.
11. substrate-placing platform according to claim 10, which is characterized in that
The substrate-placing platform also has matrix, and the mounting portion is protrusively provided upward from the central portion of described matrix, described
Peripheral ring is set to described matrix across heat-insulating material.
12. the substrate-placing platform according to claim 10 or 11, which is characterized in that
The width beyond part of the substrate when the substrate-placing is to the mounting surface is the region for being not used as product
Width below.
13. substrate-placing platform according to claim 12, which is characterized in that
The width beyond part is less than 10mm, and the width in the gap is 1mm~9mm.
14. substrate-placing platform according to claim 13, which is characterized in that
The width beyond part is 5mm less than 10mm, and the width in the gap is 3mm~5mm.
15. a kind of film build method, in the film build method, using film formation device to place in the state that substrate-placing is to mounting portion
It manages room supply processing gas and film process is implemented to substrate, which is configured with substrate-placing in the process chamber
Platform, the substrate-placing platform include：The mounting portion, upper surface become the mounting surface for loading substrate；Peripheral ring, with every
It and surrounds the outer of the mounting portion in the gap that the insulation of its heat exchange between the mounting portion functions as inhibition
The mode complete cycle in week it is arranged, which is characterized in that,
The film build method has following process：
The substrate by complete cycle is covered to the gap and takes the work for being placed in the mounting surface in a manner of the peripheral ring
Sequence；
The process for the 1st temperature that the temperature of the mounting portion is adjusted to form a film using the processing gas；
The temperature of the peripheral ring is adjusted to can not be using the process for the 2nd temperature that the processing gas forms a film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015120811A JP6478828B2 (en) | 2015-06-16 | 2015-06-16 | Film forming apparatus, film forming method, and substrate mounting table |
| JP2015-120811 | 2015-06-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106256923A CN106256923A (en) | 2016-12-28 |
| CN106256923B true CN106256923B (en) | 2018-09-28 |
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| CN201610425922.6A Active CN106256923B (en) | 2015-06-16 | 2016-06-16 | Film formation device, film build method and substrate-placing platform |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6478828B2 (en) |
| KR (1) | KR101848145B1 (en) |
| CN (1) | CN106256923B (en) |
| TW (1) | TWI690994B (en) |
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| JP7008497B2 (en) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | Substrate processing equipment and temperature control method |
| JP2019220497A (en) | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
| JP7008602B2 (en) * | 2018-09-27 | 2022-01-25 | 東京エレクトロン株式会社 | Film forming equipment and temperature control method |
| WO2020115962A1 (en) * | 2018-12-03 | 2020-06-11 | 株式会社アルバック | Film forming apparatus and film forming method |
| JP7236953B2 (en) * | 2019-08-05 | 2023-03-10 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
| WO2021221886A1 (en) | 2020-04-29 | 2021-11-04 | Applied Materials, Inc. | Heater cover plate for uniformity improvement |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266924A (en) * | 2007-03-16 | 2008-09-17 | 东京毅力科创株式会社 | Substrate processing apparatus, substrate processing method and storage medium |
| JP3155802U (en) * | 2009-09-17 | 2009-12-03 | 日本碍子株式会社 | Wafer mounting device |
| CN102315151A (en) * | 2010-06-30 | 2012-01-11 | 东京毅力科创株式会社 | Substrate stage, substrate processing apparatus and substrate processing system |
| TW201413864A (en) * | 2012-06-13 | 2014-04-01 | Tokyo Electron Ltd | Substrate placing table and substrate processing apparatus |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2910277B2 (en) | 1991-03-13 | 1999-06-23 | 松下電器産業株式会社 | Converter transformer inspection equipment |
| JPH07273053A (en) * | 1994-03-31 | 1995-10-20 | Tokyo Electron Ltd | Treatment device and coating of aluminum-based member |
| JP2001140078A (en) * | 1999-11-12 | 2001-05-22 | Anelva Corp | Chemical vapor deposition system |
| US6795292B2 (en) * | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
| KR100443122B1 (en) * | 2001-10-19 | 2004-08-04 | 삼성전자주식회사 | Heater Assembly for Fabricating a Semiconductor Device |
| JP5482282B2 (en) * | 2009-03-03 | 2014-05-07 | 東京エレクトロン株式会社 | Mounting table structure and film forming apparatus |
| JP2014120658A (en) * | 2012-12-18 | 2014-06-30 | Sharp Corp | Film deposition apparatus for compound semiconductor |
-
2015
- 2015-06-16 JP JP2015120811A patent/JP6478828B2/en active Active
-
2016
- 2016-06-14 TW TW105118501A patent/TWI690994B/en active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266924A (en) * | 2007-03-16 | 2008-09-17 | 东京毅力科创株式会社 | Substrate processing apparatus, substrate processing method and storage medium |
| JP3155802U (en) * | 2009-09-17 | 2009-12-03 | 日本碍子株式会社 | Wafer mounting device |
| CN102315151A (en) * | 2010-06-30 | 2012-01-11 | 东京毅力科创株式会社 | Substrate stage, substrate processing apparatus and substrate processing system |
| TW201413864A (en) * | 2012-06-13 | 2014-04-01 | Tokyo Electron Ltd | Substrate placing table and substrate processing apparatus |
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| Publication number | Publication date |
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| TW201703137A (en) | 2017-01-16 |
| TWI690994B (en) | 2020-04-11 |
| KR101848145B1 (en) | 2018-04-11 |
| CN106256923A (en) | 2016-12-28 |
| JP6478828B2 (en) | 2019-03-06 |
| JP2017002385A (en) | 2017-01-05 |
| KR20160148471A (en) | 2016-12-26 |
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