CN106256923A - Film formation device, film build method and substrate-placing platform - Google Patents
Film formation device, film build method and substrate-placing platform Download PDFInfo
- Publication number
- CN106256923A CN106256923A CN201610425922.6A CN201610425922A CN106256923A CN 106256923 A CN106256923 A CN 106256923A CN 201610425922 A CN201610425922 A CN 201610425922A CN 106256923 A CN106256923 A CN 106256923A
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- Prior art keywords
- substrate
- temperature
- mounting portion
- film
- peripheral ring
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 100
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 239000007789 gas Substances 0.000 claims abstract description 61
- 230000033228 biological regulation Effects 0.000 claims abstract description 31
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims description 23
- 238000001704 evaporation Methods 0.000 claims description 23
- 239000011159 matrix material Substances 0.000 claims description 18
- 229920002396 Polyurea Polymers 0.000 claims description 13
- 238000006116 polymerization reaction Methods 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 3
- 208000032825 Ring chromosome 2 syndrome Diseases 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 description 61
- 208000033641 Ring chromosome 5 syndrome Diseases 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 3
- 125000005442 diisocyanate group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000028016 temperature homeostasis Effects 0.000 description 2
- 239000006091 Macor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Abstract
The present invention provides a kind of film formation device, film build method and substrate-placing platform.Uniform film can be formed, and only can form film on substrate.Film formation device has substrate-placing platform, substrate is implemented process chamber and process gas supply mechanism that film forming processes.Substrate-placing platform includes: its upper surface becomes the mounting portion of the mounting surface of mounting substrate；The peripheral ring arranged in the way of surrounding the periphery of mounting portion；The temperature of mounting portion is adjusted to process gases at utilization and carries out the 1st temperature regulation section of the 1st temperature of film forming；Can be adjusted to the temperature of peripheral ring the place's of utilization process gases cannot carry out the 2nd temperature regulation section of the 2nd temperature of film forming, between mounting portion and peripheral ring, it is provided with the gap as insulation function complete cycle, mounting surface is formed less than substrate, gap by the substrate when substrate is placed into mounting surface beyond part complete cycle take in peripheral ring in the way of formed.
Description
Technical field
The present invention relates to process gases at substrate supply and form the film formation device of film, film build method and for film forming
The substrate-placing platform of device.
Background technology
Sealant for organic EL display etc. employ organic material film.It is known to following method: manufacturing
During such organic material film, utilize gasifier etc. to make Organic Ingredients evaporation supply in film forming room, make them on substrate
Evaporation is polymerized and forms organic membrane (such as patent documentation 1).
Prior art literature
Patent documentation
Patent documentation 1: No. 4283910 publications of Japanese Patent
Summary of the invention
The problem that invention is to be solved
But, in the case of utilizing evaporation to be aggregated on large-area substrate formation organic material film, it is difficult to equably
Carry out film forming.It addition, form film in the part in addition to substrate in process chamber, accordingly, there exist maintenance period shorter so
Problem.
Such problem is not limited to the situation utilizing evaporation polymerization to form organic material film, is processing to process chamber supply
Gas exists in the case of carrying out film forming process the most in a large number.
Thus, it is an object of the invention to, it is provided that a kind of film formation device, film build method and for such film formation device
Substrate-placing platform, wherein, process gases at supply and when carrying out film forming on substrate, it is possible to form uniform film, and can
On substrate, only form film.
For solving the scheme of problem
In order to solve the problems referred to above, the present invention provides a kind of film formation device, comprising: substrate-placing platform, it is used for loading
Substrate；Process chamber, it processes for the substrate being placed on described substrate-placing platform is implemented film forming；Process gas supply member,
It is for the place's process gases processed to described process chamber supply film forming, and this film formation device is to the substrate on described substrate-placing platform
Implement film forming to process, it is characterised in that described substrate-placing platform includes: mounting portion, and its upper surface becomes for loading substrate
Mounting surface；Peripheral ring, it is arranged in the way of surrounding the periphery of described mounting portion；1st temperature regulation section, it is for by described load
Put the 1st temperature that the temperature in portion is adjusted to utilize described place process gases to carry out film forming；2nd temperature regulation section, it is used for will
The temperature of described peripheral ring is adjusted to the 2nd temperature that described place process gases cannot be utilized to carry out film forming, in described mounting portion and institute
State between peripheral ring, be provided with as the insulation for suppressing the heat exchange between described mounting portion and described peripheral ring complete cycle
The gap of function, the described mounting surface of described mounting portion is formed less than described substrate, and described gap is with at described substrate
When being placed on described mounting surface, described substrate takes in described peripheral ring beyond part complete cycle from what described mounting surface exceeded
Mode is formed.
It addition, the present invention provides a kind of substrate-placing platform, it is used for supplying place's process gases and substrate being implemented film forming and processes
Film formation device, it is characterised in that this substrate-placing platform includes: mounting portion, and its upper surface becomes the mounting for loading substrate
Face；Peripheral ring, it is arranged in the way of surrounding the periphery of described mounting portion；1st temperature regulation section, it is by the temperature of described mounting portion
Degree is adjusted to the 1st temperature utilizing described place process gases to carry out film forming；2nd temperature regulation section, it is by described peripheral ring
Temperature is adjusted to the 2nd temperature that described place process gases cannot be utilized to carry out film forming, between described mounting portion and described peripheral ring,
It is provided with as suppressing between the insulation function of the heat exchange between described mounting portion and described peripheral ring complete cycle
Gap, the described mounting surface of described mounting portion is formed less than described substrate, described gap with at described substrate-placing to described load
When putting face, described substrate takes the mode in described peripheral ring from what described mounting surface exceeded formed beyond part complete cycle.
And, the present invention provides a kind of film build method, uses film formation device at substrate-placing to carrying in this film build method
Under the state putting portion at process chamber supply process gases and to substrate implement film forming process, this film formation device is in described process chamber
Being configured with substrate-placing platform, this substrate-placing platform includes: described mounting portion, and its upper surface becomes the mounting for loading substrate
Face；Peripheral ring, it is using across the gap of the insulation function as the heat exchange suppressed between itself and described mounting portion bag
Arranging with enclosing the mode complete cycle of the periphery of described mounting portion, this film build method is characterised by, this film build method has following work
Sequence: described substrate is covered described gap taking is placed in the work of described mounting surface in the way of described peripheral ring by complete cycle
Sequence；The temperature of described mounting portion is adjusted to utilize the operation of the 1st temperature that described place process gases carries out film forming；By described
The temperature of peripheral ring is adjusted to utilize the operation of the 2nd temperature that described place process gases carries out film forming.
Following structure can be set to: described substrate-placing platform has matrix, and described mounting portion is from the central part of described matrix
Being protrusively provided upward, described peripheral ring is arranged at described matrix across adiabator.
Preferably, the width beyond part of the described substrate when described substrate-placing to described mounting surface is unused
Below the width in the region making product.In this case, it is possible to be set to the described width beyond part less than 10mm, described gap
Width be 1mm～9mm.Preferably, the described width beyond part is that 5mm is less than 10mm, the width in described gap
Degree is 3mm～5mm.
Can also be, also have: upper lid, it be arranged in the way of covering described substrate-placing platform, is used for dividing formation
Described process chamber；3rd temperature regulation section, the temperature of described upper lid is adjusted to utilize described place process gases to become by it
3rd temperature of film.
Can be set to, also there is the spraying component arranged in the way of relative with described mounting surface, will regulate the flow of vital energy from described
Place's process gases that the supply of body supply part comes sprays from described spraying component.
Use organic system gas as described place process gases, it is possible to be polymerized by evaporation formed on the substrate organic
Film.In this case, it is possible to be set to, described organic membrane is polyurea film, utilizes described 1st temperature regulation section to carry out temperature regulation,
So that described 1st temperature of described mounting portion becomes less than 100 DEG C, described 2nd temperature regulation section is utilized to carry out temperature regulation, with
Described 2nd temperature making described peripheral ring becomes more than 150 DEG C.
The effect of invention
According to the present invention, the temperature of mounting portion is adjusted to process gases at utilization and carries out the 1st temperature of film forming, will outward
The temperature of chow ring is adjusted to the place's of utilization process gases to carry out the 2nd temperature of film forming, therefore, it is possible to only form film on substrate.
It addition, between mounting portion and peripheral ring, it is provided with as suppressing heat exchange between mounting portion and peripheral ring complete cycle
The gap of insulation function, therefore, it is possible to prevent directly from periphery hoop mounting portion heat transfer.Therefore, it is possible to will mounting
The temperature in portion controls the state in the heat affecting inhibiting peripheral ring, but can make the homogeneous temperature of substrate and be formed uniform
Film.It addition, make the upper surface of peripheral ring concordant with mounting surface, mounting surface is made to be configured less than substrate, and, gap is set to
Substrate-placing is taken in size as the upper surface of peripheral ring to during mounting surface the peripheral part complete cycle of substrate, therefore, and gap quilt
Substrate covers, it is possible to prevents locating process gases and enters in gap.
Accompanying drawing explanation
Fig. 1 is the sectional view of the film formation device representing one embodiment of the present invention.
Fig. 2 is the top view of the thermoregulation mechanism of the film formation device schematically showing Fig. 1.
Fig. 3 is the sectional view that represents of the partial enlargement of the substrate-placing platform by the film formation device of Fig. 1 ground.
Description of reference numerals
1, substrate-placing platform；2, upper lid；3, matrix；4, mounting portion；5, peripheral ring；6, gap；7, adiabator；8, empty
Between；9, shower plate；10, process chamber；13, gas supply mechanism is processed；16, exhaust gear；17,18,19, temperature regulating medium stream
Road；20, temperature regulating medium feed unit；25, control portion；100, film formation device；G, substrate.
Detailed description of the invention
Hereinafter, referring to the drawings embodiments of the present invention are illustrated.
Fig. 1 is the sectional view of the film formation device representing one embodiment of the present invention, and Fig. 2 schematically shows Fig. 1
The top view of the thermoregulation mechanism of film formation device.
Film formation device 100 has: substrate-placing platform 1, and it is used for loading substrate G；Upper lid 2, it is used for dividing formation and uses
In the process chamber that the substrate G being placed on substrate-placing platform 1 is carried out film forming process.
Substrate-placing platform 1 has: plate-shaped matrix 3；It is arranged in the way of the central part from matrix 3 highlights upward
Column and its upper surface become the mounting portion 4 of mounting surface 4a for loading substrate G；It is arranged at matrix 3 across adiabator 7
The peripheral ring 5 of the surrounding of mounting portion 4.Mounting surface 4a of the upper surface forming mounting portion 4 is formed less than substrate G.In this example,
Substrate G and mounting surface 4a rectangular shaped.
Peripheral ring 5 is arranged in the way of to surround the periphery of mounting portion 4 across gap 6, in the shape of a frame.Outside gap 6 is as suppression
The insulation function of the heat exchange between chow ring 5 and mounting portion 4.The upper surface of peripheral ring 5 is concordant with mounting surface 4a.
When substrate G is placed on mounting surface 4a, its peripheral part with becoming complete cycle from mounting surface 4a exceed beyond part,
The size of gap 6 becomes the crossing gap 6 beyond part and arrive the upper surface of peripheral ring 5, take in peripheral ring 5 complete cycle of substrate G
Upper surface as size.Thus, when substrate G is placed on mounting surface 4a, gap 6 is covered by substrate G.
Adiabator 7 is in the frame-shaped corresponding with peripheral ring 5, and inner peripheral surface is placed in contact with the periphery of mounting portion 4.Adiabatic
Material 7 is arranged to make adiabatic between peripheral ring 5 and matrix 3, it is possible to Talcum, MACOR (registered trade mark) are preferably used
The ceramic material that such heat conductivity is relatively low.Additionally, the periphery of peripheral ring 5 and adiabator 7 has reached the periphery of matrix 3
Position.
As shown in the enlarged drawing of Fig. 3, the width D 1 beyond part exceeded from mounting surface 4a of substrate G is set to technology ensuring
Below the outer and width in the region that is not used as product.The width in the region outside this technology ensuring is typically about 10mm, therefore,
In the case of Gai, the preferably width beyond part be less than 10mm.It addition, the width beyond part of the width D 2 and substrate G in gap 6
D1 correspondingly changes, and in the case of the width D 1 beyond part is less than 10mm, the width D 2 in gap 6 is about 1mm～9mm.
Preferably, substrate G beyond part width D 1 be 5mm less than 10mm, the width D 2 in gap is 3mm～5mm.
Upper lid 2 has sidewall 2a and roof 2b, and sidewall 2a is supported on air-tight state across containment member (not shown)
The upper surface of peripheral ring 5.In the lower section of roof 2b, space 8 is provided with shower plate 9, sidewall 2a and shower plate 9 surrounds
Part becomes process chamber 10.In addition it is also possible to be set to directly be supported the structure of upper lid 2 by matrix 3.In this case, periphery
Ring 5 and adiabator 7 are formed in the way of in the inner part than the periphery of matrix 3 by their periphery.
Reach the gas introducing port 11 in space 8 being centrally formed of roof 2b, gas introducing port 11 via pipe arrangement 12 with
Process gas supply mechanism 13 to connect.Further, reach empty from the place's process gases processing gas supply mechanism 13 via pipe arrangement 12
Between 8, spray in process chamber 10 from many gas squit hole 9a being arranged at shower plate 9.Gas squit hole 9a both can be equal
It is configured at the region relative with substrate G of shower plate 9, it is also possible to configure with describing specific pattern evenly.
By so process gases at supply in process chamber 10, substrate G forms predetermined film.Now, by from from
Process gases feed mechanism 13 uses predetermined organic system gas as place's process gases, it is possible to utilize evaporation to be aggregated in shape on substrate G
Become organic membrane.As the organic membrane utilizing evaporation polymerization to be formed, as representative, it is possible to list polyurea film.Forming polyureas
During film, to utilize gasifier etc. to make process gases at the state supply of diisocyanate and diamine gasification.Thereby, it is possible to make them
On substrate G, evaporation is polymerized and forms polyurea film.
Be formed with air vent 14 in the bottom of the sidewall 2a of upper lid 2, air vent 14 is connected with aerofluxus pipe arrangement 15.In aerofluxus
The exhaust gear 16 being made up of vacuum pump and pressure-control valve etc. it is provided with, it is possible to be kept in process chamber 10 on pipe arrangement 15
Predetermined vacuum atmosphere.In the case of being formed polyurea film by diisocyanate and diamine, by the pressure control in process chamber 10
Make 10Torr (1333Pa) below, be controlled preferably to 0.2Torr～2.0Torr (26.7Pa～266Pa).
It addition, although not shown, but it is formed with the input/output port for input and output substrate G at the sidewall 2a of upper lid 2,
This input/output port can be by switching mechanism opening and closings such as gate valves.
It is internally provided with the 1st temperature regulating medium stream 17, by making the 1st temperature regulating medium to this in mounting portion 4
1st temperature regulating medium stream 17 circulates, and is adjusted the temperature of mounting portion 4.The 1st temperature regulating medium is utilized to carry out
Temperature regulates so that the substrate G being placed on mounting surface 4a become can the 1st temperature T1 of film forming.Formed utilizing evaporation polymerization
In the case of organic membrane, it is low to carrying out the temperature of degree that is deposited with for needing the 1st temperature T1, is utilizing evaporation polymerization formation
In the case of polyurea film, the 1st temperature T1 is controlled so as to carry out less than 100 DEG C, preferably 50 DEG C～100 of evaporation polymerization
℃。
It is internally provided with the 2nd temperature regulating medium stream 18, by making the 2nd temperature regulating medium to this at peripheral ring 5
2nd temperature regulating medium stream 18 circulates, and is adjusted the temperature of peripheral ring 5.Utilize the 2nd temperature regulating medium will outward
The temperature of chow ring 5 is adjusted to be formed the 2nd temperature T2 of film on its surface.In the situation utilizing evaporation polymerization to form organic membrane
Under, need the 2nd temperature T2 to be up to the temperature of the degree that cannot be deposited with, enter in the case of utilizing evaporation polymerization to form polyurea film
Trip temperature regulate so that the temperature of peripheral ring 5 become cannot be carried out evaporation polymerization more than 150 DEG C, preferably 150 DEG C～
180℃。
The roof 2b of upper lid 2 is provided with the 3rd temperature regulating medium stream 19, by making the 3rd temperature regulating medium
Circulate to the 3rd temperature regulating medium stream 19, the temperature of upper lid 2 is adjusted.Utilize the 3rd temperature regulating medium
Carry out temperature regulation so that upper lid 2 become cannot within it wall formed film the 3rd temperature T3.Formed utilizing evaporation polymerization
In the case of organic membrane, the 3rd temperature T3 needs the temperature being up to cannot be carried out the degree of evaporation, is formed utilizing evaporation polymerization
In the case of polyurea film, the temperature of upper lid 2 is controlled so as to cannot form more than 150 DEG C of film, preferably 150 DEG C effectively
～180 DEG C.
From temperature regulating medium feed unit 20 respectively to the 1st～the 3rd temperature regulating medium stream 17～19 supply the 1st～
3rd temperature regulating medium.Temperature regulating medium feed unit 20 has the 1st temperature regulating medium to the 1st temperature regulating medium
Stream 17 supply the 1st temperature regulating medium supply unit (CH1) 20a, by the 2nd temperature regulating medium to the 2nd temperature regulating medium
Stream 18 supply the 2nd temperature regulating medium supply unit (CH2) 20b, by the 3rd temperature regulating medium to the 3rd temperature regulating medium
3rd temperature regulating medium supply unit (CH3) 20c of stream 19 supply.
1st temperature regulating medium supply unit (CH1) 20a supplies the 1st temperature regulation with to the 1st temperature regulating medium stream 17
Supplying tubing 21a of medium, return the return pipe arrangement 21b (figure of the 1st temperature regulating medium from the 1st temperature regulating medium stream 17
2) connect, so that the 1st temperature regulating medium is circulated supply to the 1st temperature regulating medium stream 17.It addition, the 1st temperature regulation is situated between
The temperature of the 1st temperature regulating medium is controlled into the 1st temperature T1 by matter supply unit (CH1) 20a.
2nd temperature regulating medium supply unit (CH2) 20b supplies the 2nd temperature regulation with to the 2nd temperature regulating medium stream 18
Supplying tubing 22a of medium, return the return pipe arrangement 22b (figure of the 2nd temperature regulating medium from the 2nd temperature regulating medium stream 18
2) connect, so that the 2nd temperature regulating medium is circulated supply to the 2nd temperature regulating medium stream 18.It addition, the 2nd temperature regulation is situated between
The temperature of the 2nd temperature regulating medium is controlled into the 2nd temperature T2 by matter supply unit (CH2) 20b.
3rd temperature regulating medium supply unit (CH3) 20c supplies the 3rd temperature regulation with to the 3rd temperature regulating medium stream 19
Supplying tubing 23a of medium, return the return pipe arrangement 23b (figure of the 3rd temperature regulating medium from the 3rd temperature regulating medium stream 19
2) connect, so that the 3rd temperature regulating medium is circulated supply to the 3rd temperature regulating medium stream 19.It addition, the 3rd temperature regulation is situated between
The temperature of the 3rd temperature regulating medium is controlled into the 3rd temperature T3 by matter supply unit (CH3) 20c.
Additionally, temperature regulating medium feed unit 20 can also be to the 2nd temperature regulating medium stream the 18 and the 3rd temperature
The temperature regulating medium of regulation medium stream 19 supply carries out temperature controlled unit in the lump.It addition, at Fig. 1, in 2, schematically
The the 1st～the 3rd temperature regulating medium stream 17～19 is described on ground, actually so that their temperature to be adjusted to the side of predetermined temperature
Formula is configured to suitable shape.
Film formation device 100 has the control portion 25 for being controlled each constituting portion of film formation device 100.Control portion 25
There is microprocessor (computer), to processing gas supply mechanism 13, exhaust gear 16, temperature regulating medium feed unit 20
Etc. being controlled.Control portion 25 performs predetermined process processing procedure, has the control stored needed for the process processing procedure that promising execution is predetermined
Parameter processed, the process storage part of processing procedure, input block and display etc..
In the film formation device 100 so constituted, will be transported in process chamber 10 from substrate input/output port (not shown)
Substrate G to take mounting surface 4a being placed in mounting portion 4 in the way of external rings 5 with covering gap 6 complete cycle, utilize exhauster
Structure 16 is kept into predetermined vacuum state by process chamber 10.Then, by warm to the 1st from temperature regulating medium feed unit 20
Degree regulation medium stream the 17, the 2nd temperature regulating medium stream the 18, the 3rd temperature regulating medium stream 19 is supplied respectively to the 1st temperature and adjusts
Joint medium, the 2nd temperature regulating medium, the 3rd temperature regulating medium, be adjusted to the 1st temperature of film forming by the temperature of mounting portion 4
T1, the temperature of peripheral ring 5 and upper lid 2 being adjusted to respectively cannot the 2nd temperature T2 of film forming and the 3rd temperature T3.Additionally,
2nd temperature T2 and the 3rd temperature T3 can also be identical.
In this condition, supply in process chamber 10 via pipe arrangement 12 and shower plate 9 from process gas supply mechanism 13
Place's process gases, forms predetermined film on the surface of substrate G.
Such as, as place's process gases, predetermined organic system gas is used, it is possible to utilize evaporation to be aggregated on substrate and be formed with
Machine film.In the case of utilizing evaporation polymerization formation polyurea film as organic membrane, by the Stress control in process chamber 10 it is
10Torr (1333Pa) below, is preferably controlled to 0.2Torr～2.0Torr (26.7Pa～266Pa), as locating process gases,
Utilize and supply to process chamber 10 under the state that gasifier etc. makes diisocyanate and diamine gasify, make them on substrate G
Evaporation polymerization.
In this case, the 1st temperature T1 as the temperature of mounting portion 4 is low to carrying out the temperature of degree that is deposited with
Degree, in the case of forming polyurea film, utilizes the 1st temperature regulating medium that the temperature of mounting portion 4 is adjusted to less than 100 DEG C, excellent
Select 50 DEG C～100 DEG C.On the other hand, as the 2nd temperature T2 and the 3rd of the temperature as upper lid 2 the of temperature of peripheral ring 5
Temperature T3 is up to cannot be carried out the temperature of the degree of evaporation, in the case of forming polyurea film, is utilized respectively the 2nd temperature regulation
The temperature of peripheral ring 5 and upper lid 2 is adjusted to more than 150 DEG C by medium and the 3rd temperature regulating medium, preferably 150 DEG C～
180℃。
Thereby, it is possible to only carry out film forming on the surface of substrate G, it is possible to suppress the periphery in the periphery being arranged at mounting portion 4
The surface of ring 5, the inwall of upper lid 2 form film.
But, the situation of the most different temperature it is adjusted to respectively in the mounting portion 4 that so will abut against and peripheral ring 5 temperature
Under, if mounting portion 4 contacts with peripheral ring 5, then mounting portion 4 is easily and peripheral ring 5 carries out heat exchange, the temperature control of mounting portion 4
Reduce, it is difficult on substrate G, form uniform film.Especially, if substrate G maximizes, then its tendency becomes apparent.
In contrast, in the present embodiment, it is provided with work between the mounting portion 4 of mounting surface 4a and peripheral ring 5 including
For the gap 6 of insulation, it is therefore possible to prevent directly carry out heat transfer from peripheral ring 5 to mounting portion 4.Especially, gap 6 reaches
Top, makes the upper surface of mounting surface 4a and peripheral ring 5 completely cut off effectively, and temperature the most each other will not produce dry between which
Relate to.And, available adiabator 7 suppresses from peripheral ring 5 via the matrix 3 of substrate-placing platform 1 to the heat transfer of mounting portion 4.
Therefore, it is possible to control the temperature of mounting portion 4 when inhibiting the heat affecting from peripheral ring 5, it is possible to make the temperature of substrate G
Degree uniformly forms uniform film.
It addition, in the case of being provided with such gap 6, if place's process gases enters gap 6, then there are following bad feelings
Condition: become and cannot be obtained insulation effect in the reason of microgranule or gap 6 by film forming, but in the present embodiment, make peripheral ring
The upper surface of 5 is concordant with mounting surface 4a, and it is less than substrate G to make mounting surface 4a of the upper surface as mounting portion 4 be configured, and
And, the size in gap 6 is set to the substrate G when substrate G is placed on mounting surface 4a from mounting surface 4a exceed beyond part
Take in size as the upper surface of peripheral ring 5, therefore, it is possible to prevent such unfavorable condition complete cycle.I.e., on by being set to
State such structure, when substrate G is placed on mounting surface 4a, substrate G mounting surface 4a complete cycle exist beyond part
Take in peripheral ring 5, thus gap 6 is shielded, it is possible to prevent locating process gases and enter in gap 6.
And, there is outside technology ensuring and be not used as the region of product in the outer peripheral portion at substrate G, therefore, as long as will be super
The width D 1 going out part is set to below the width in this region, then the yield rate of product will not be made to reduce.
The width in the region outside technology ensuring is typically about 10mm, it is therefore preferable that the width D 1 beyond part is less than
10mm.It addition, the width D 1 beyond part of the width D 2 in gap 6 and substrate G correspondingly changes, in the width D 1 beyond part
In the case of 10mm, the width D 2 in gap 6 is about 1mm～9mm.It addition, between mounting table 4 and peripheral ring 5
From the viewpoint of insulation effect, the width D 2 in gap 6 there is also preferred scope, comprehensively these, then preferable substrate G beyond portion
Point width D 1 be 5mm less than 10mm, the width D 2 in gap is 3mm～5mm.
Additionally, the present invention is not limited to above-mentioned embodiment, it is possible to carry out various deformation.Such as, above-mentioned embodiment party
In formula, it is shown that following situation: by using predetermined organic system gas to utilize evaporation to be aggregated in substrate as place's process gases
The situation of upper formation organic membrane, particularly forms the situation of polyurea film, but is not limited to this, it is possible to is applied to such as CVD etc. and makes
Use process gases carries out the whole circumstances of film forming.
It addition, in the above-described embodiment, it is shown that utilize temperature regulating medium that mounting portion, peripheral ring etc. are carried out temperature
The situation of regulation, but self-evident, it is possible to use other temperature controlling units such as resistance type heater.
And, in the above-described embodiment, the situation being shaped as rectangular shape to the mounting surface of substrate and mounting portion
It is illustrated, but is certainly not limited to this.
Claims (15)
1. a film formation device, comprising:
Substrate-placing platform, it is used for loading substrate；
Process chamber, it processes for the substrate being placed on described substrate-placing platform is implemented film forming；
Processing gas supply member, it is for the place's process gases processed to described process chamber supply film forming, this film formation device pair
Substrate on described substrate-placing platform is implemented film forming and is processed, it is characterised in that
Described substrate-placing platform includes:
Mounting portion, its upper surface becomes the mounting surface for loading substrate；
Peripheral ring, it is arranged in the way of surrounding the periphery of described mounting portion；
1st temperature regulation section, it is for being adjusted to utilize described place process gases to carry out film forming by the temperature of described mounting portion
The 1st temperature；
2nd temperature regulation section, it is for being adjusted to utilize described place process gases to carry out film forming by the temperature of described peripheral ring
The 2nd temperature,
Between described mounting portion and described peripheral ring, it is provided with as suppressing described mounting portion and described periphery complete cycle
The gap of the insulation function of the heat exchange between ring,
The described mounting surface of described mounting portion is formed less than described substrate, described gap with at described substrate-placing to described load
When putting face, described substrate takes the mode in described peripheral ring from what described mounting surface exceeded formed beyond part complete cycle.
Film formation device the most according to claim 1, it is characterised in that
Described substrate-placing platform has matrix, and described mounting portion is protrusively provided upward from the central part of described matrix, described
Peripheral ring is arranged at described matrix across adiabator.
Film formation device the most according to claim 1 and 2, it is characterised in that
The width beyond part of the described substrate when described substrate-placing to described mounting surface is the region being not used as product
Width below.
Film formation device the most according to claim 3, it is characterised in that
The described width beyond part is less than 10mm, and the width in described gap is 1mm～9mm.
Film formation device the most according to claim 4, it is characterised in that
Described beyond part width be 5mm be 3mm～5mm less than 10mm, the width in described gap.
6. according to the film formation device according to any one of Claims 1 to 5, it is characterised in that
This film formation device also has: upper lid, and it is arranged in the way of covering described substrate-placing platform, is used for dividing formation described
Process chamber；3rd temperature regulation section, it is for being adjusted to utilize described place process gases to become by the temperature of described upper lid
3rd temperature of film.
7. according to the film formation device according to any one of claim 1～6, it is characterised in that
This film formation device also has the spraying component arranged in the way of relative with described substrate-placing face, will regulate the flow of vital energy from described
Place's process gases that the supply of body supply part comes sprays from described spraying component.
8. according to the film formation device according to any one of claim 1～7, it is characterised in that
As described place process gases, use organic system gas, utilize evaporation polymerization to form organic membrane on the substrate.
Film formation device the most according to claim 8, it is characterised in that
Described organic membrane is polyurea film, utilizes described 1st temperature regulation section to carry out temperature regulation, so that described mounting portion is described
1st temperature becomes less than 100 DEG C, utilizes described 2nd temperature regulation section to carry out temperature regulation, so that described the of described peripheral ring
2 temperature become more than 150 DEG C.
10. a substrate-placing platform, its film formation device substrate enforcement film forming processed for supplying place's process gases, its feature
It is,
This substrate-placing platform includes:
Mounting portion, its upper surface becomes the mounting surface for loading substrate；
Peripheral ring, it is arranged in the way of surrounding the periphery of described mounting portion；
1st temperature regulation section, the temperature of described mounting portion is adjusted to utilize described place process gases to carry out the 1st of film forming by it
Temperature；
2nd temperature regulation section, the temperature of described peripheral ring is adjusted to utilize described place process gases to carry out the 2nd of film forming by it
Temperature,
Between described mounting portion and described peripheral ring, it is provided with as suppressing described mounting portion and described periphery complete cycle
The gap of the insulation function of the heat exchange between ring,
The described mounting surface of described mounting portion is formed less than described substrate, described gap with at described substrate-placing to described load
When putting face, described substrate takes the mode in described peripheral ring from what described mounting surface exceeded formed beyond part complete cycle.
11. substrate-placing platforms according to claim 10, it is characterised in that
This substrate-placing platform also has matrix, and described mounting portion is protrusively provided upward from the central part of described matrix, described
Peripheral ring is arranged at described matrix across adiabator.
12. according to the substrate-placing platform described in claim 10 or 11, it is characterised in that
The width beyond part of the described substrate when described substrate-placing to described mounting surface is the region being not used as product
Width below.
13. substrate-placing platforms according to claim 12, it is characterised in that
The described width beyond part is less than 10mm, and the width in described gap is 1mm～9mm.
14. substrate-placing platforms according to claim 13, it is characterised in that
Described beyond part width be 5mm be 3mm～5mm less than 10mm, the width in described gap.
15. 1 kinds of film build methods, in this film build method, use film formation device when substrate-placing to mounting portion to place
Managing process gases at the supply of room and substrate is implemented film forming and processes, this film formation device is configured with substrate-placing in described process chamber
Platform, this substrate-placing platform includes: described mounting portion, and its upper surface becomes the mounting surface for loading substrate；Peripheral ring, its with every
The gap the insulation function as the heat exchange suppressed between itself and described mounting portion surrounds outside described mounting portion
The mode complete cycle ground in week is arranged, and this film build method is characterised by,
This film build method has a following operation:
Described substrate is covered described gap taking is placed in the work of described mounting surface in the way of described peripheral ring by complete cycle
Sequence；
The temperature of described mounting portion is adjusted to utilize the operation of the 1st temperature that described place process gases carries out film forming；
The temperature of described peripheral ring is adjusted to utilize the operation of the 2nd temperature that described place process gases carries out film forming.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015120811A JP6478828B2 (en) | 2015-06-16 | 2015-06-16 | Film forming apparatus, film forming method, and substrate mounting table |
| JP2015-120811 | 2015-06-16 |
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| Publication Number | Publication Date |
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| CN106256923A true CN106256923A (en) | 2016-12-28 |
| CN106256923B CN106256923B (en) | 2018-09-28 |
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| CN201610425922.6A Active CN106256923B (en) | 2015-06-16 | 2016-06-16 | Film formation device, film build method and substrate-placing platform |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6478828B2 (en) |
| KR (1) | KR101848145B1 (en) |
| CN (1) | CN106256923B (en) |
| TW (1) | TWI690994B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112334595A (en) * | 2018-12-03 | 2021-02-05 | 株式会社爱发科 | Film forming apparatus and film forming method |
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| JP7008497B2 (en) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | Substrate processing equipment and temperature control method |
| JP2019220497A (en) | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
| JP7008602B2 (en) * | 2018-09-27 | 2022-01-25 | 東京エレクトロン株式会社 | Film forming equipment and temperature control method |
| JP7236953B2 (en) * | 2019-08-05 | 2023-03-10 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
| WO2021221886A1 (en) | 2020-04-29 | 2021-11-04 | Applied Materials, Inc. | Heater cover plate for uniformity improvement |
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| JP2011192661A (en) * | 2009-03-03 | 2011-09-29 | Tokyo Electron Ltd | Placing table structure, film forming apparatus, and raw material recovery method |
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| Publication number | Publication date |
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| TW201703137A (en) | 2017-01-16 |
| TWI690994B (en) | 2020-04-11 |
| KR101848145B1 (en) | 2018-04-11 |
| CN106256923B (en) | 2018-09-28 |
| JP6478828B2 (en) | 2019-03-06 |
| JP2017002385A (en) | 2017-01-05 |
| KR20160148471A (en) | 2016-12-26 |
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