CN105489711A - Preparation method of front surface field with ultralow surface concentration of interdigitated back contact cell - Google Patents
Preparation method of front surface field with ultralow surface concentration of interdigitated back contact cell Download PDFInfo
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- CN105489711A CN105489711A CN201610050185.6A CN201610050185A CN105489711A CN 105489711 A CN105489711 A CN 105489711A CN 201610050185 A CN201610050185 A CN 201610050185A CN 105489711 A CN105489711 A CN 105489711A
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- nitrogen
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- surface field
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 37
- 239000011574 phosphorus Substances 0.000 claims abstract description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 32
- 239000001301 oxygen Substances 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012298 atmosphere Substances 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 125000004437 phosphorous atom Chemical group 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000002775 capsule Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a front surface field with ultralow surface concentration of an interdigitated back contact cell. A front surface field and a passivated oxide layer are formed by means of a direct phosphorus source method. The preparation method includes the steps of arranging a silicon chip in a vessel in the atmosphere of nitrogen and oxygen at the temperature of 800 DEG C to 810 EDG C, conducting phosphorus source deposition in the atmosphere of nitrogen, oxygen and nitrogen carrying a phosphorus source at the temperature of 800 DEG C to 950 EDG C, conducting oxidation propulsion in the nitrogen plus oxygen atmosphere at the temperature of 800 DEG C to 950 EDG C, and then taking the silicon chip out of the vessel in the atmosphere of nitrogen at the temperature of 800 DEG C to 810 EDG C. The surface concentration of the obtained front surface field can reach 1E18cm<3> to 5E18cm<3>, and the junction depth is 0.1 [mu]m to 0.2[mu]m. According to the method, the internal quantum efficiency of a short-wave band of an IBC cell applying the front surface field with ultralow surface concentration can reach more than 95%.
Description
Technical field
The present invention relates to the preparation field of battery front-surface field, be specifically related to a kind of preparation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field.
Background technology
All back-contact electrodes solar cell, makes again IBC(Interdigitatedbackcontact refer to intersect back contacts) battery, refer to that battery front side is electrodeless, positive and negative polarities metal grid lines is that interdigitate is arranged in cell backside.The high efficiency brought because front is unobstructed makes IBC battery enjoy favor.Because P-N junction is positioned at the back side of battery, the generation of photo-generated carrier is mainly near front surface (i.e. front), and charge carrier needs the place arriving the back side through whole silicon wafer thickness just can be collected.If front passivation is bad, photo-generated carrier can be easy to just be lowered efficiency by compound before the arrival back side.Therefore, good front passivation seems particularly important.The means of common IBC battery front side passivation introduce the height knot of a N+N, is referred to as front-surface field.Front-surface field not only can realize better passivation, can improve the stability of battery simultaneously, make it have higher tolerance to UV irradiation.Front-surface field is generally formed by the method for diffusion, and at high temperature, by silicon chip surface sedimentary phosphor source, under the effect of little oxygen (low discharge oxygen), phosphorus source and oxygen react and generates P
2o
5, P
2o
5displace phosphorus atoms with pasc reaction again, phosphorus atoms enters the object reaching doping in silicon chip by High temperature diffusion.The doping content of front-surface field is higher, the dark saturation current density J after passivation
0also higher, compound is larger.Therefore, front-surface field is generally the shallow junction diffusion of low surface concentration.By spreading the surface concentration of the front-surface field obtained generally at 1E19cm in the mode in silicon chip surface sedimentary phosphor source in prior art
-3above, the shallow junction doping curve obtaining lower surface concentration is difficult to.
Summary of the invention
The invention provides a kind of preparation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field, adopt direct phosphorus source method to form front-surface field and passivating oxide layer, the surface concentration of gained front-surface field can reach 1E18cm
-3to 5E18cm
-3, junction depth is 0.1 μm-0.2 μm.Gained front-surface field covers the thermal oxidation silicon thin layer of one deck 5nm to 15nm simultaneously.
A preparation method for all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprises step:
In nitrogen and oxygen atmosphere, fill silicon chip at 800 DEG C-810 DEG C and enter boat, again 800 DEG C-950 DEG C in nitrogen, oxygen and carry phosphorus source nitrogen atmosphere in carry out phosphorus source deposition, then 800 DEG C-950 DEG C oxidation propellings in nitrogen oxygen atmosphere, then in nitrogen atmosphere, boat is gone out in 800 DEG C-810 DEG C.
In order to reach better invention effect, preferably:
In the deposition step of described phosphorus source, phosphorus source flux is less than oxygen flow.The inventive method coordinates the O of high flow capacity by the phosphorus source flux of low discharge
2flow, reaches the front-surface field doping of low surface concentration, grows thermal oxidation silicon simultaneously.
The flow carrying the nitrogen in phosphorus source in the deposition step of described phosphorus source is 50 standard milliliters/minute (sccm)-200sccm(more preferably 100sccm-150sccm), oxygen flow is 500sccm-2000sccm.
The time of described phosphorus source deposition is 10min-20min.
Described dress silicon chip enters the flow of flow much larger than oxygen of nitrogen in boat step, and this nitrogen and oxygen atmosphere are commonly referred to as large N
2add little oxygen atmosphere.
The time be oxidized in described oxidation forward step is 10min-50min, phosphorus atoms is diffused into inside silicon chip and forms N+ doped region, grows one deck thin silicon oxide layer at silicon chip surface simultaneously.
The ultra low surface concentration front-surface field that the inventive method is formed, can reach simultaneously form front-surface field and grow the object that thermal oxide layer carries out passivation.In order to reach better passivation effect, and the antireflective requirement of battery front surface, usually can before this invention surface field technique complete after employing state of the art cover silicon nitride (SiNx) film at silicon chip surface, the front-surface field that the inventive method is formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.
The preparation of applying the IBC battery of ultra low surface concentration front-surface field of the present invention adopts state of the art.
Beneficial effect of the present invention:
The front-surface field surface concentration that the inventive method is formed is at 1E18cm
-3to 5E18cm
-3, junction depth, at 0.1 μm-0.2 μm, grows the thin layer of silicon oxide passivation of 5nm-15nm while forming front-surface field, then after existing SiNx passivation, the J on matte
05fA/cm can be low to moderate
2-10fA/cm
2.Significantly reduce the compound of front surface, thus make the collection efficiency of charge carrier higher.Apply the IBC battery of ultra low surface concentration front-surface field of the present invention, the internal quantum efficiency of its short-wave band is up to more than 95%.
Accompanying drawing explanation
Fig. 1 is the doping content curve chart of the front-surface field that the inventive method obtains, and wherein abscissa Depth represents the degree of depth, ordinate Concentration phosphor atom doping content.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.
embodiment 1
The preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprises step:
(1) 800 DEG C, large nitrogen (N
2) add little oxygen atmosphere under fill silicon chip and enter boat;
(2) large N
2phosphorus source depositing temperature 870 DEG C is warming up under adding little oxygen atmosphere;
(3) 870 DEG C of phosphorus source depositions, little N
2carry phosphorus source, flow is 120sccm, and logical large oxygen and phosphorus source are reacted simultaneously, and large oxygen flow is 2000sccm, and regulates large N
2flow maintains the gas gross by boiler tube, sedimentation time 15min;
(4) purge, close phosphorus source valve, only logical little N
2purge phosphorus source capsule road, large N
2maintain boiler tube gas gross;
(5) oxidation and propelling, maintain 30min at 870 DEG C, phosphorus atoms diffused into inside silicon chip and forms N+ doped region under nitrogen oxygen atmosphere, simultaneously because the thin silicon oxide layer that grow one deck 10nm at silicon chip surface is understood in the existence of oxygen;
(6) large N
2under atmosphere, temperature is reduced to 800 DEG C, N
2boat is gone out in atmosphere.
The front-surface field surface concentration formed is at 3E18cm
-3, junction depth is at 0.15 μm.The front-surface field formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.The IBC battery of application gained ultra low surface concentration front-surface field, the internal quantum efficiency of its short-wave band is up to more than 95%.
embodiment 2
The preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprises step:
(1) 800 DEG C, large N
2fill silicon chip under adding little oxygen atmosphere and enter boat;
(2) 800 DEG C of phosphorus source depositions, little N
2carry phosphorus source, flow is 150sccm, and logical large oxygen and phosphorus source are reacted simultaneously, and large oxygen flow is 500sccm, and regulates large N
2flow maintains the gas gross by boiler tube, sedimentation time 20min;
(3) purge, close phosphorus source valve, only logical little N
2purge phosphorus source capsule road, large N
2maintain boiler tube gas gross;
(4) oxidation and propelling, maintain 50min at 800 DEG C, phosphorus atoms diffused into inside silicon chip and forms N+ doped region under nitrogen oxygen atmosphere, simultaneously because the thin silicon oxide layer that grow one deck 5nm at silicon chip surface is understood in the existence of oxygen;
(5) large N
2under atmosphere, temperature is reduced to 800 DEG C, N
2boat is gone out in atmosphere.
The front-surface field surface concentration formed is at 1E18cm
-3, junction depth is at 0.1 μm.The front-surface field formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.The IBC battery of application gained ultra low surface concentration front-surface field, the internal quantum efficiency of its short-wave band is up to more than 95%.
embodiment 3
The preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprises step:
(1) 810 DEG C, large N
2fill silicon chip under adding little oxygen atmosphere and enter boat;
(2) large N
2phosphorus source depositing temperature 950 DEG C is warming up under adding little oxygen atmosphere;
(3) 950 DEG C of phosphorus source depositions, little N
2carry phosphorus source, flow is 100sccm, and logical large oxygen and phosphorus source are reacted simultaneously, and large oxygen flow is 1000sccm, and regulates large N
2flow maintains the gas gross by boiler tube, sedimentation time 10min;
(4) purge, close phosphorus source valve, only logical little N
2purge phosphorus source capsule road, large N
2maintain boiler tube gas gross;
(5) oxidation and propelling, maintain 30min at 950 DEG C, phosphorus atoms diffused into inside silicon chip and forms N+ doped region under nitrogen oxygen atmosphere, simultaneously because the thin silicon oxide layer that grow one deck 15nm at silicon chip surface is understood in the existence of oxygen;
(6) large N
2under atmosphere, temperature is reduced to 810 DEG C, N
2boat is gone out in atmosphere.
The front-surface field surface concentration formed is at 5E18cm
-3, junction depth is at 0.2 μm.The front-surface field formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.The IBC battery of application gained ultra low surface concentration front-surface field, the internal quantum efficiency of its short-wave band is up to more than 95%.
In the preparation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field of the present invention, the change of parameter does not affect the preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, therefore in preparation method of the present invention, the combination of arbitrary parameter all can realize the preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, obtains surface concentration at 1E18cm
-3-5E18cm
-3, junction depth is the front-surface field of 0.1 μm-0.2 μm.Do not repeat them here.
Claims (6)
1. a preparation method for all back-contact electrodes solar cell ultra low surface concentration front-surface field, is characterized in that, comprise step:
In nitrogen and oxygen atmosphere, fill silicon chip at 800 DEG C-810 DEG C and enter boat, again 800 DEG C-950 DEG C in nitrogen, oxygen and carry phosphorus source nitrogen atmosphere in carry out phosphorus source deposition, then 800 DEG C-950 DEG C oxidation propellings in nitrogen oxygen atmosphere, then in nitrogen atmosphere, boat is gone out in 800 DEG C-810 DEG C.
2. preparation method according to claim 1, is characterized in that, in the deposition step of described phosphorus source, phosphorus source flux is less than oxygen flow.
3. preparation method according to claim 1, is characterized in that, the nitrogen flow carrying phosphorus source in the deposition step of described phosphorus source is 50sccm-200sccm, and oxygen flow is 500sccm-2000sccm.
4. preparation method according to claim 1, is characterized in that, the time of described phosphorus source deposition is 10min-20min.
5. preparation method according to claim 1, is characterized in that, described dress silicon chip enters the flow of flow much larger than oxygen of nitrogen in boat step.
6. preparation method according to claim 1, is characterized in that, the time be oxidized in described oxidation forward step is 10min-50min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610050185.6A CN105489711B (en) | 2016-01-26 | 2016-01-26 | A kind of preparation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field |
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|---|---|---|---|
| CN201610050185.6A CN105489711B (en) | 2016-01-26 | 2016-01-26 | A kind of preparation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field |
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| Publication Number | Publication Date |
|---|---|
| CN105489711A true CN105489711A (en) | 2016-04-13 |
| CN105489711B CN105489711B (en) | 2017-11-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
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| CN104752564A (en) * | 2015-04-02 | 2015-07-01 | 中建材浚鑫科技股份有限公司 | Novel diffusion process capable of increasing polysilicon open-circuit voltage |
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- 2016-01-26 CN CN201610050185.6A patent/CN105489711B/en active Active
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|---|---|---|---|---|
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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