CN209232797U - Silica-based solar cell and photovoltaic module - Google Patents
Silica-based solar cell and photovoltaic module Download PDFInfo
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- CN209232797U CN209232797U CN201821681716.2U CN201821681716U CN209232797U CN 209232797 U CN209232797 U CN 209232797U CN 201821681716 U CN201821681716 U CN 201821681716U CN 209232797 U CN209232797 U CN 209232797U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The utility model discloses a kind of silica-based solar cell and photovoltaic modulies, belong to technical field of solar batteries.The silica-based solar cell includes: P-type crystal silicon matrix, the emitter layer of the P-type crystal silicon front side of matrix is set, positive tunnelling passivation layer on the emitter layer is set, the front doped silicon layer of group V element doping on the positive tunnelling passivation layer regional area is set, antireflection layer on the region of the front doped silicon layer and the not set front doped silicon layer of the positive tunnelling passivation layer is set, and the front electrode on the antireflection layer is set；Wherein, the front electrode passes through the antireflection layer and the front doped silicon layer Ohmic contact.The silica-based solar cell shell reduces absorption of the doped silicon layer to light under the premise of guaranteeing passivation effect, is conducive to the photoelectric conversion efficiency for improving silica-based solar cell.
Description
Technical field
The utility model relates to technical field of solar batteries, in particular to a kind of silica-based solar cell and photovoltaic group
Part.
Background technique
Photovoltaic power generation directly converts solar energy into electrical energy, be it is a kind of cleaning, sustainability and cost performance it is relatively high
Generation mode.Silica-based solar cell is the important component of photovoltaic generating system, and the photoelectricity of silica-based solar cell turns
Efficiency is changed to have a major impact the output power of photovoltaic power generation and the electric cost of degree.The photoelectric conversion performance of silica-based solar cell according to
It is bad that portion's minority carrier concentration, the compound of minority carrier bury in oblivion the stream that will cause solar array voltage and electric current in the inner
It loses, to reduce the photoelectric conversion efficiency of battery.In crystalline silicon matrix surface there are many defects, be very it is serious it is compound in
The heart.Passivating structure is set between crystalline silicon matrix surface and metal electrode to be passivated silicon chip surface, can reduce crystal silicon substrate
The probability of recombination of body surface face minority carrier is conducive to the incident photon-to-electron conversion efficiency for improving solar battery.
A kind of passivating structure of silica-based solar cell is provided in the related technology, including is arranged in crystalline silicon matrix surface
Tunnelling passivation layer, and the doped silicon layer being arranged on tunnelling passivation layer, electrode then with doped silicon layer Ohmic contact.
However, doped silicon layer is more serious to the absorptance of incident ray, the photoelectric conversion effect of silica-based solar cell is influenced
Rate.
Utility model content
Based on the above, the utility model embodiment provides a kind of silica-based solar cell, can reduce incident light
The absorption of line, improves the photoelectric conversion efficiency of silica-based solar cell, and the utility model embodiment is additionally provided using the silicon substrate
The photovoltaic module of solar battery.
Specifically, including technical solution below:
In a first aspect, the utility model embodiment provides a kind of silica-based solar cell, the silica-based solar cell
Include:
P-type crystal silicon matrix,
The emitter layer of the P-type crystal silicon front side of matrix is set,
Positive tunnelling passivation layer on the emitter layer is set,
The front doped silicon layer of group V element doping on the positive tunnelling passivation layer regional area is set,
The front doped silicon layer and the positive not set front doped silicon layer of tunnelling passivation layer are set
Antireflection layer on region, and,
Front electrode on the antireflection layer is set；
Wherein, the front electrode passes through the antireflection layer and the front doped silicon layer Ohmic contact.
In a possible embodiment, the front doped silicon layer is corresponding with the pattern of the front electrode.
In another possible embodiment, it is described front tunnelling passivation layer be selected from silicon oxide layer, silicon oxynitride layer, with
And at least one of hydrogenated amorphous silicon oxide layer.
In another possible embodiment, the front doped silicon layer is doped polysilicon layer or doped polycrystalline
Silicon/oxidative silicon mixed layer.
In another possible embodiment, in the front doped silicon layer group V element doping concentration be 5 ×
1018atoms/cm3~9 × 1020atoms/cm3。
In another possible embodiment, the antireflection layer is selected from silicon nitride layer, silicon oxynitride layer, silica
At least one of layer and silicon carbide layer.
In another possible embodiment, the silica-based solar cell further include: be arranged in the P-type crystal silicon
The alumina layer at the matrix back side is arranged in the coating on the alumina layer, and is arranged at the supratectal back side
Electrode；Wherein, the rear electrode passes through the coating and the alumina layer connects with described P-type crystal silicon matrix ohm
Touching.
In another possible embodiment, the rear electrode includes first electrode and second electrode, and described first
For electrode in linear, the second electrode is arranged in the region being located at other than the first electrode on the coating, and described the
Two electrodes are contacted with the first electrode；The alumina layer and the coating are provided with via hole, and the second electrode is logical
Cross the via hole and the P-type crystal silicon substrate contact.
In another possible embodiment, the second electrode covers all coatings or described second
Coating described in electrode-covering portions.
In another possible embodiment, the silica-based solar cell further include: be arranged in the P-type crystal silicon
The iii group element doping on the back side tunnelling passivation layer regional area is arranged in the back side tunnelling passivation layer at the matrix back side
Back side doped silicon layer, setting adulterates at the not set back side of the back side doped silicon layer and the back side tunnelling passivation layer
Alumina layer on the region of silicon layer is arranged in the coating on the alumina layer, and is arranged described supratectal
Rear electrode；Wherein, the rear electrode passes through the coating and the alumina layer and described back side doped silicon layer ohm
Contact.
In another possible embodiment, the back side doped silicon layer is corresponding with the pattern of the rear electrode.
In another possible embodiment, the back side tunnelling passivation layer is selected from silicon oxide layer, alumina layer, oxidation
At least one of vanadium layers, tungsten oxide layer, nickel oxide layer, molybdenum oxide layer and protochloride layers of copper.
In another possible embodiment, the back side doped silicon layer is doped polysilicon layer or doped polycrystalline
Silicon/oxidative silicon mixed layer.
In another possible embodiment, in the back side doped silicon layer iii group element doping concentration be 1 ×
1018atoms/cm3~8 × 1020atoms/cm3。
In another possible embodiment, the coating be selected from silicon nitride layer, silicon oxynitride layer, silicon oxide layer,
And at least one of silicon carbide layer.
Second aspect, the utility model embodiment provide another silica-based solar cell, the silica-based solar electricity
Pond includes:
P-type crystal silicon matrix,
The back side tunnelling passivation layer at the P-type crystal silicon matrix back side is set,
The back side doped silicon layer of iii group element doping on the back side tunnelling passivation layer regional area is set,
The back side doped silicon layer and the not set back side doped silicon layer of the back side tunnelling passivation layer are set
Alumina layer on region,
Coating on the alumina layer is set,
It is arranged in the supratectal rear electrode,
The emitter layer of the P-type crystal silicon front side of matrix is set,
Antireflection layer on the emitter layer is set, and,
Front electrode on the antireflection layer is set；
Wherein, the rear electrode passes through the coating and the alumina layer connects with described back side doped silicon layer ohm
Touching, the front electrode pass through the antireflection layer and the emitter layer Ohmic contact.
In a possible embodiment, the back side doped silicon layer is corresponding with the pattern of the rear electrode.
In another possible embodiment, the back side tunnelling passivation layer is selected from silicon oxide layer, alumina layer, oxidation
At least one of vanadium layers, tungsten oxide layer, nickel oxide layer, molybdenum oxide layer and protochloride layers of copper.
In another possible embodiment, the back side doped silicon layer is doped polysilicon layer or doped polycrystalline
Silicon/oxidative silicon mixed layer.
In another possible embodiment, in the back side doped silicon layer iii group element doping concentration be 1 ×
1018atoms/cm3~8 × 1020atoms/cm3。
In another possible embodiment, the coating be selected from silicon nitride layer, silicon oxynitride layer, silicon oxide layer,
And at least one of silicon carbide layer.
In another possible embodiment, the antireflection layer is selected from silicon nitride layer, silicon oxynitride layer, silica
At least one of layer and silicon carbide layer.
The third aspect, the utility model embodiment provide a kind of photovoltaic module, which includes setting gradually
Cover board, the first packaging adhesive film, battery strings, the second packaging adhesive film and backboard, the battery strings include multiple solar batteries,
In, the solar battery is above-mentioned silica-based solar cell.
The beneficial effect of technical solution provided by the embodiment of the utility model is:
In silica-based solar cell provided by the embodiment of the utility model, only in the part of positive (back side) tunnelling passivation layer
Front (back side) doped silicon layer ohm of positive (back side) doped silicon layer of region setting, positive (back side) electrode and local setting connects
Touching is conducive to improve silica-based solar electricity to reduce absorption of the doped silicon layer to light under the premise of guaranteeing passivation effect
The photoelectric conversion efficiency in pond.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described.
Fig. 1 is a kind of structural schematic diagram of crystal silicon solar energy battery provided by the embodiment of the utility model；
Fig. 2 is the structural schematic diagram of another crystal silicon solar energy battery provided by the embodiment of the utility model；
Fig. 3 is the structural schematic diagram of full Al-BSF rear electrode；
Fig. 4 is the structural schematic diagram of local Al-BSF rear electrode；
Fig. 5 is the structural schematic diagram of another crystal silicon solar energy battery provided by the embodiment of the utility model；
Fig. 6 is the structural schematic diagram of another crystal silicon solar energy battery provided by the embodiment of the utility model.
Appended drawing reference in figure respectively indicates:
1 P-type crystal silicon matrix；
2 emitter layers；
3 positive tunnelling passivation layers；
4 front doped silicon layers；
5 antireflection layers；
6 front electrodes；
7 alumina layers；
8 coatings；
9 rear electrodes；
91 first electrodes；
92 second electrodes；
10 back side tunnelling passivation layers；
11 back side doped silicon layers；
X via hole.
Specific embodiment
To keep the technical solution of the utility model and advantage clearer, the utility model is implemented below in conjunction with attached drawing
Mode is described in further detail.Unless otherwise defined, all technical terms used in the utility model embodiment all have
With the normally understood identical meaning of those skilled in the art.
As shown in Figure 1, Figure 2 or shown in Fig. 5, the utility model embodiment provides a kind of silica-based solar cell, and the silicon substrate is too
It is positive can battery include:
P-type crystal silicon matrix 1,
It is arranged in the positive emitter layer 2 of P-type crystal silicon matrix 1,
Positive tunnelling passivation layer 3 on emitter layer 2 is set,
The front doped silicon layer 4 of group V element doping on positive 3 regional area of tunnelling passivation layer is set,
Subtracting on the region of front doped silicon layer 4 and the not set front doped silicon layer 4 of positive tunnelling passivation layer 3 is set
Reflecting layer 5, and,
Front electrode 6 on antireflection layer 5 is set.
Wherein, front electrode 6 passes through antireflection layer 5 and 4 Ohmic contact of front doped silicon layer.
In silica-based solar cell provided by the embodiment of the utility model, only it is arranged just in the regional area of front tunnel layer
Face doped silicon layer 4,4 Ohmic contact of front doped silicon layer of front electrode 6 and local setting, thus before guaranteeing passivation effect
It puts, reduces absorption of the doped silicon layer to light, be conducive to the photoelectric conversion efficiency for improving silica-based solar cell.
In the utility model embodiment, front doped silicon layer 4 is corresponding with the pattern of front electrode 6, it is understood that is upper
The regional area for stating positive tunnelling passivation layer 3 is region corresponding with front electrode 6.
Front electrode 6 can be grid line structure, i.e. front electrode 6 may include a plurality of substantially parallel main gate line and a plurality of basic
Parallel secondary grid line, and main gate line and secondary grid line are substantially vertical.Correspondingly, front doped silicon layer 4 can be with grid-shaped structure.?
In possible implementation, the width of latticed front doped silicon layer 4 part corresponding with the main gate line of front electrode 6 is bigger
In the width of main gate line, the width of part corresponding with secondary grid line is slightly larger than the width of secondary grid line.
Further, in the embodiment of the present invention, positive tunnelling passivation layer 3 can be electronics tunnel passivation layer, at high temperature
There is expansion of the group V element in positive tunnel passivation layer under certain barrier effect namely high temperature to the diffusion of group V element
It dissipates rate and is much smaller than its diffusion rate in front doped silicon layer 4.Positive tunnelling passivation layer 3 can be silicon oxide layer, nitrogen oxygen
At least one of SiClx layer, hydrogenated amorphous silicon oxide layer.The thickness of positive tunnelling passivation layer 3 can be received for 1.2 nanometers~2.5
Rice, for example, 1.2 nanometers, 1.3 nanometers, 1.4 nanometers, 1.5 nanometers, 1.6 nanometers, 1.7 nanometers, 1.8 nanometers, 1.9 nanometers, 2.0 receive
Rice, 2.1 nanometers, 2.2 nanometers, 2.3 nanometers, 2.4 nanometers, 2.5 nanometers.
Front doped silicon layer 4 can be doped polysilicon layer or doped polycrystalline silicon/oxidative silicon mixed layer.Wherein, polysilicon/
Silica mixed layer is that polycrysalline silcon is evenly distributed in silicon oxide film or to be wrapped in silica thin on polycrysalline silcon surface
Film.The thickness of front doped silicon layer 4 can be 20 nanometers~1000 nanometers, for example, 20 nanometers, 50 nanometers, 100 nanometers, 150 receive
Rice, 200 nanometers, 250 nanometers, 300 nanometers, 350 nanometers, 400 nanometers, 450 nanometers, 500 nanometers, 550 nanometers, 600 nanometers,
750 nanometers, 800 nanometers, 850 nanometers, 900 nanometers, 950 nanometers, 1000 nanometers etc..
The element adulterated in front doped silicon layer 4 is specifically as follows phosphorus (Phosphorus, P), the doping of the element of doping
Concentration can be 5 × 1018atoms/cm3~9 × 1020atoms/cm3, such as 5 × 1018atoms/cm3、6×1018atoms/
cm3、7×1018atoms/cm3、8×1018atoms/cm3、9×1018atoms/cm3、1×1019atoms/cm3、2×
1019atoms/cm3、3×1019atoms/cm3、4×1019atoms/cm3、5×1019atoms/cm3、6×1019atoms/cm3、
7×1019atoms/cm3、8×1019atoms/cm3、9×1019atoms/cm3、1×1020atoms/cm3、2×1020atoms/
cm3、3×1020atoms/cm3、4×1020atoms/cm3、5×1020atoms/cm3、6×1020atoms/cm3、7×
1020atoms/cm3、8×1020atoms/cm3、9×1020atoms/cm3Deng.
In the embodiment of the present invention, emitter layer 2 is N-type silicon, can be by adulterating group V element to P-type crystal silicon matrix 1
(including but not limited to phosphorus) is formed.In the embodiment, the square resistance of the emitter layer 2 formed after doping can be 40
Ω/~200 Ω/ (such as 40 Ω/, 50 Ω/, 60 Ω/, 70 Ω/, 80 Ω/, 90 Ω/, 100 Ω/,
110Ω/□、120Ω/□、130Ω/□、140Ω/□、150Ω/□、160Ω/□、170Ω/□、180Ω/□、190
Ω/, 200 Ω/ etc.), the square resistance in the different region of emitter layer 2 may be the same or different.
Antireflection layer 5 may include at least one of silicon nitride layer, silicon oxynitride layer, silicon oxide layer, silicon carbide layer, i.e.,
It can be individual silicon nitride layer, individual silicon oxynitride layer, individual silicon oxide layer or individual silicon carbide layer can also be with
It is that two or more in silicon nitride layer, silicon oxynitride layer, silicon oxide layer and silicon carbide layer is stacked.Antireflection layer
5 thickness can be 68 nanometers~100 nanometers (such as 68 nanometers, 70 nanometers, 72 nanometers, 74 nanometers, 75 nanometers, 76 nanometers, 78
Nanometer, 80 nanometers, 82 nanometers, 84 nanometers, 85 nanometers, 86 nanometers, 88 nanometers, 90 nanometers, 92 nanometers, 94 nanometers, 95 nanometers, 96
Nanometer, 98 nanometers, 100 nanometers etc.).When antireflection layer 5 is laminated construction, each layer of thickness is not strict with, can be with
(such as needs of refractive index) are configured as needed, as long as meeting the requirements the thickness of the entirety of antireflection layer 5.
Further, for the structure at the silica-based solar cell back side provided by the embodiment of the utility model, can have with
Optional embodiment down.
Embodiment one
As shown in Figure 1 or 2, in the embodiment, silica-based solar cell further include:
The alumina layer 7 at 1 back side of P-type crystal silicon matrix is set,
Coating 8 on alumina layer 7 is set, and,
Rear electrode 9 on coating 8 is set.
Wherein, rear electrode 9 passes through coating 8 and alumina layer 7 and 1 Ohmic contact of P-type crystal silicon matrix.
Further, in the embodiment, coating 8 may include silicon nitride (SiNx) layer, silicon oxynitride (SiOxNy)
Layer, silica (SiOx) layer, silicon carbide (SiCxAt least one of), it can it is individual silicon nitride layer, individual nitrogen oxidation
Silicon layer or individual silicon oxide layer are also possible to silicon nitride layer, silicon oxynitride layer, silicon oxide layer, two kinds in silicon carbide layer
Or it two or more is stacked.The whole thickness of coating 8 can be 20 nanometers~200 nanometers, for example, 20 nanometers, 30 receive
Rice, 40 nanometers, 50 nanometers, 60 nanometers, 70 nanometers, 80 nanometers, 90 nanometers, 100 nanometers, 110 nanometers, 120 nanometers, 130 nanometers,
140 nanometers, 150 nanometers, 160 nanometers, 170 nanometers, 180 nanometers, 190 nanometers, 200 nanometers etc..When coating 8 is laminated construction
When, each layer of thickness is not strict with, and be can according to need and is configured, as long as meeting the thickness of the entirety of coating 8
It is required that.It should be noted that can also be not provided with coating 8 in the utility model embodiment, rear electrode 9 is directly arranged
On alumina layer 7.
In the embodiment, rear electrode 9 can use PERC (Passivated Emitter and Rear Cell)
9 structure of rear electrode of battery, specifically includes first electrode 91 and second electrode 92, wherein and first electrode 91 is in linear, and second
The region being located at other than first electrode 91 on coating 8 is arranged in electrode 92, and second electrode 92 is contacted with first electrode 91；Together
When, via hole X is provided on coating 8 and alumina layer 7, second electrode 92 passes through the via hole on coating 8 and alumina layer 7
X is contacted with P-type crystal silicon matrix 1.
Wherein, first electrode 91 is alternatively referred to as main electrode, solar energy when preparing for conductive confluence and photovoltaic module
The series welding of battery, first electrode 91 can be set a plurality of, such as 2~4, can be parallel to each other between a plurality of first electrode 91,
First electrode 91 can be set to discontinuous linear electrode.First electrode 91 can be formed by silver paste, can also be formed by silver-colored aluminium paste,
Second electrode 92 can be formed by aluminium paste.
It should be noted that the slurry of second electrode 92 will be used to form after via hole X is arranged in coating 8 and alumina layer 7
Material is printed on coating 8, and above-mentioned slurry can be with 1 surface of P-type crystal silicon matrix of exposing at via hole X in high-temperature sintering process
Occur to expand reaction formation back electric field (not shown), the slurry that diffusion reaction does not occur plays the role of conducting, forms the second electricity
Pole 92.By taking aluminium paste as an example, the P+ that diffusion reaction forms aluminium doping occurs for 1 surface of P-type crystal silicon matrix that aluminium paste and via hole X expose
Silicon layer and silico-aluminum, wherein P+ silicon layer (i.e. back electric field) can enable band and bend to repel few son in the distribution on surface, mention
High minority carrier life time acts the effect for passivation of showing up,
Second electrode 92 can cover whole coatings 8 (as shown in Figure 3), also covering part coating 8 (as shown in Figure 4).
For for the 92 covering part coating 8 of second electrode the case where, second electrode 92 can all be covered a via hole X,
The part of a via hole X can only be covered.It is understood that the P-type crystal silicon sun of 92 covering part coating 8 of second electrode
Light also can be absorbed in the back side of energy battery, realizes that transparent two sides, generating electricity on two sides have higher incident photon-to-electron conversion efficiency.
The cross sectional shape of via hole X can be it is round, linear (i.e. strip), square, triangle, number of edges are 5 or more
Polygon or other shapes.
For circular via hole X, diameter can be 10 microns~200 microns (such as 10 microns, 20 microns, 30
Micron, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, 110 microns, 120 microns, it is 130 micro-
Rice, 140 microns, 150 microns, 160 microns, 170 microns, 180 microns, 190 microns, 200 microns etc.), pitch of holes can be 100
Micron~1000 microns (such as 100 microns, 200 microns, 300 microns, 400 microns, 500 microns, 600 microns, 700 microns,
800 microns, 900 microns, 1000 microns etc.).In the utility model embodiment, the pitch of holes of circular vias X refers to two neighboring
The distance between center of circle via hole X.
For linear via hole X, width can be 20 microns~100 microns (such as 20 microns, 30 microns, 40
Micron, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns etc.), length can be slightly less than P-type crystal silicon
The side length of matrix 1 (P-type crystal silicon matrix 1 is generally square or has the square of chamfering).The length direction of linear via hole X
It can be vertical with the length direction of first electrode 91.Multiple, and phase between multiple linear via hole X has can be set in linear via hole X
Mutually parallel, the distance between two neighboring linear via hole X (the distance between two neighboring linear via hole X center line) can be
500 microns~2000 microns (such as 500 microns, 600 microns, 700 microns, 800 microns, 900 microns, 1000 microns, it is 1100 micro-
Rice, 1200 microns, 1300 microns, 1400 microns, 1500 microns, 1600 microns, 1700 microns, 1800 microns, 1900 microns,
2000 microns).In the utility model embodiment, linear via hole X can be set to the form of dotted line, i.e., linear via hole X is in length
It is discontinuous on direction.
For the via hole X of other cross sectional shapes, size can be determined according to the actual situation.
Embodiment two
As shown in figure 5, in the embodiment, silica-based solar cell further include:
The back side tunnelling passivation layer 10 at 1 back side of P-type crystal silicon matrix is set,
The back side doped silicon layer 11 of iii group element doping on overleaf 10 regional area of tunnelling passivation layer is set,
It is arranged on the region of overleaf doped silicon layer 11 and the not set back side doped silicon layer 11 of back side tunnelling passivation layer 10
Alumina layer 7,
Coating 8 on alumina layer 7 is set, and,
Rear electrode 9 on coating 8 is set.
Wherein, rear electrode 9 passes through coating 8 and alumina layer 7 and 11 Ohmic contact of back side doped silicon layer.
In the embodiment, the silica-based solar cell back side also uses local doped silicon layer structure, is guaranteeing passivation effect
While, the absorption to light is reduced, the photoelectric conversion efficiency of silica-based solar cell is promoted.
In one possible implementation, back side doped silicon layer 11 is corresponding with the pattern of rear electrode 9, it is understood that
Regional area for above-mentioned back side tunnelling passivation layer 10 is region corresponding with rear electrode 9.
Further, back side tunnelling passivation layer 10 can be tunneled holes passivation layer, i.e., back side tunnelling passivation layer 10 is in height
There is III-th family overleaf tunnelling passivation layer 10 under certain barrier effect namely high temperature to the diffusion of iii group element under temperature
For the rate of middle diffusion much smaller than the diffusion rate in its overleaf doped silicon layer 11, back side tunnelling passivation layer 10 can be silica
At least one of layer, alumina layer 7, vanadium oxide layer, tungsten oxide layer, nickel oxide layer, molybdenum oxide layer and protochloride layers of copper, back
The thickness of face tunnelling passivation layer 10 can be 1.2 nanometers~2.5 nanometers, for example, 1.2 nanometers, 1.3 nanometers, 1.4 nanometers, 1.5 receive
Rice, 1.6 nanometers, 1.7 nanometers, 1.8 nanometers, 1.9 nanometers, 2.0 nanometers, 2.1 nanometers, 2.2 nanometers, 2.3 nanometers, 2.4 nanometers,
2.5 nanometer.
Back side doped silicon layer 11 can be doped polysilicon layer or doped polycrystalline silicon/oxidative silicon mixed layer.Wherein, polycrystalline
Silicon/oxidative silicon mixed layer is that polycrysalline silcon is evenly distributed in silicon oxide film or polycrysalline silcon surface is wrapped in silica
Film.
The thickness of back side doped silicon layer 11 can be 20 nanometers~1000 nanometers, such as 20 nanometers, 50 nanometers, 100 nanometers,
150 nanometers, 200 nanometers, 250 nanometers, 300 nanometers, 350 nanometers, 400 nanometers, 450 nanometers, 500 nanometers, 550 nanometers, 600 receive
Rice, 750 nanometers, 800 nanometers, 850 nanometers, 900 nanometers, 950 nanometers, 1000 nanometers etc..
The element adulterated in back side doped silicon layer 11 is specifically as follows boron (Boron, B), the doping concentration of the element of doping
It can be 1 × 1018atoms/cm3~8 × 1020atoms/cm3, such as 1 × 1018atoms/cm3、2×1018atoms/cm3、3
×1018atoms/cm3、4×1018atoms/cm3、5×1018atoms/cm3、6×1018atoms/cm3、7×1018atoms/
cm3、8×1018atoms/cm3、9×1018atoms/cm3、1×1019atoms/cm3、2×1019atoms/cm3、3×
1019atoms/cm3、4×1019atoms/cm3、5×1019atoms/cm3、6×1019atoms/cm3、7×1019atoms/cm3、
8×1019atoms/cm3、9×1019atoms/cm3、1×1020atoms/cm3、2×1020atoms/cm3、3×1020atoms/
cm3、4×1020atoms/cm3、5×1020atoms/cm3、6×1020atoms/cm3、7×1020atoms/cm3、8×
1020atoms/cm3Deng.
In the embodiment, rear electrode 9 can be grid line structure, i.e. rear electrode 9 may include a plurality of substantially parallel master
Grid line and a plurality of substantially parallel secondary grid line, and main gate line and secondary grid line are substantially vertical.Correspondingly, back side doped silicon layer 11 can be with
Grid-shaped structure.In possible implementation, latticed front doped silicon layer 4 is corresponding with the main gate line of front electrode 6
The width of part be slightly larger than the width of main gate line, the width of part corresponding with secondary grid line is slightly larger than the width of secondary grid line.
As shown in fig. 6, the utility model embodiment provides another silica-based solar cell, the silica-based solar cell
Include:
P-type crystal silicon matrix 1,
The back side tunnelling passivation layer 10 at 1 back side of P-type crystal silicon matrix is set,
The back side doped silicon layer 11 of iii group element doping on overleaf 10 regional area of tunnelling passivation layer is set,
It is arranged on the region of overleaf doped silicon layer 11 and the not set back side doped silicon layer 11 of back side tunnelling passivation layer 10
Alumina layer 7,
Coating 8 on alumina layer 7 is set,
Rear electrode 9 on coating 8 is set,
It is arranged in the positive emitter layer 2 of P-type crystal silicon matrix 1,
Antireflection layer 5 on emitter layer 2 is set, and,
Front electrode 6 on antireflection layer 5 is set.
Wherein, rear electrode 9 passes through coating 8 and alumina layer 7 and 11 Ohmic contact of back side doped silicon layer, front electrode
6 pass through antireflection layer 5 and 2 Ohmic contact of emitter layer.
As described above, the back side of the silica-based solar cell is guaranteeing passivation effect using local doped layer structure
Meanwhile absorption of the reduction to light, promote the photoelectric conversion efficiency of silica-based solar cell.
The specific set-up mode of the silica-based solar cell each section can refer to description above, and details are not described herein.
In the following, being illustrated to the preparation method of above-mentioned silica-based solar cell.
The preparation method of above two silica-based solar cell is essentially identical, and main includes cleaning P-type crystal silicon matrix 1 simultaneously
Making herbs into wool forms smooth emitter layer 2, back surface, formation back side tunnelling passivation layer 10 and/or positive tunnelling passivation layer 3, forms back
Face doped polysilicon layer and/or front doped polysilicon layer form alumina layer 7, form antireflection layer 5 and coating 8, formation
Front electrode 6 and rear electrode 9 etc. below elaborate to each step of preparation method.
Step S1 cleans P-type crystal silicon matrix 1, and in the positive making herbs into wool of P-type crystal silicon matrix 1.
In the step, sodium hydroxide (NaOH) and hydrogen peroxide (H can be used2O2) mixed aqueous solution to P-type crystal silicon substrate
Body 1 is cleaned, to remove surface contaminant and damaging layer.
It can use alkaline corrosion liquid and carry out making herbs into wool, acid etching solution can also be used and carry out making herbs into wool, alkaline corrosion liquid can be with
For sodium hydrate aqueous solution.
After making herbs into wool, the reflectivity of monocrystalline silicon sheet surface can 10%~18% (such as 10%, 11%, 12%, 13%,
14%, 15%, 16%, 17%, 18% etc.), the reflectivity on polysilicon chip surface can 6%~20% (such as 6%, 7%,
8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20% etc.).
Step S2 is doped the front surface of P-type crystal silicon matrix 1 to form emitter layer 2 (P-N junction).
Boiler tube diffusion, deposition silica glass containing doped source can be passed through and annealed or Doped ions are injected and annealed etc. just
Formula is doped 1 front surface of P-type crystal silicon matrix.
Step S3 carries out the back surface of P-type crystal silicon matrix 1 smooth.
Can be smooth by back surface progress of the chemical solution to P-type crystal silicon matrix 1, suitably to reduce P-type crystal silicon substrate
The specific surface area of 1 back surface of body, and with hydrofluoric acid (aqueous solution of HF) cleaning silicon chip.
Wherein, carrying out smooth chemical solution to 1 back surface of P-type crystal silicon matrix can be aqueous slkali, including but unlimited
In tetramethylammonium hydroxide (TMAH) solution, sodium hydroxide (NaOH) solution, potassium hydroxide (KOH) etc., the concentration of aqueous slkali can
It is adjusted as needed；It may be acid solution, such as nitric acid (HNO3), hydrofluoric acid (HF) and sulfuric acid (H2SO4) mixing it is molten
Liquid, the proportion in mixed solution between the concentration and each acid solution of each acid solution can also be adjusted as needed.
Step S4 forms back side tunnelling passivation layer 10 in the back surface of P-type crystal silicon matrix 1 and/or in P-type crystal silicon substrate
Positive tunnelling passivation layer 3 is formed on the emitter layer 2 of body 1.
In the step, thermal oxidation technology, low temperature boiler tube oxidation technology, nitric acid oxidation process, UV/ozone oxidation can be used
Technique, hydrogen peroxide oxidation technique, atomic layer deposition (Aatomic Layer Deposition, ALD) technique or chemical gaseous phase
It deposits (Chemical Vapor Deposition, CVD) technique etc. and forms (the positive tunnelling passivation layer of back side tunnelling passivation layer 10
3), wherein chemical vapor deposition process concretely plasma enhanced chemical vapor deposition (Plasma Enhanced
Chemical Vapor Deposition, PECVD) technique, low-pressure chemical vapor deposition (Low Pressure Chemical
Vapor Deposition, LPCVD) technique.
Step S5 overleaf forms the back side doped silicon of iii group element doping on the regional area of tunnelling passivation layer 10
Layer 11 and/or the front doped silicon layer 4 that group V element doping is formed on the regional area of positive tunnelling passivation layer 3.
Specifically, it can first overleaf be formed on (front) tunnelling passivation layer and cover the whole back side (front) tunnellings and be passivated
The back side (front) intrinsic silicon layer of layer rearwardly adulterates III-th family (group V) element later and forms back in (front) intrinsic silicon layer
Face (front) doped silicon layer；The back side (front) protective layer is overleaf formed on the predeterminated position of (front) doped silicon layer later, it
The part that the removal back side (front) doped silicon layer is not covered by the back side (front) protective layer afterwards, so that overleaf (front) tunnelling is blunt
The regional area for changing layer forms the back side (front) doped silicon layer.
It is understood that the predeterminated position of the above-mentioned back side (front) doped silicon layer is and the back that needs to be arranged doped silicon layer
The corresponding position of regional area on face (front) tunnelling passivation layer specifically can be and the back side (front) electrode phase
Corresponding position.
In the utility model embodiment, it can carried on the back by the predeterminated position of the laser irradiation back side (front) doped silicon layer
The predeterminated position of face (front) doped silicon layer forms silicon oxide layer (such as phosphorosilicate glass PSG or Pyrex containing doped source
BSG), to contain the silicon oxide layer of doped source as protective layer.
Boiler tube diffusion, deposition silica glass containing doped source and annealing or Doped ions can be passed through and the modes such as inject and anneal
The back side (front) intrinsic silicon layer is doped.
It can not protected by the back side (front) by alkaline solution, such as the sodium hydroxide solution removal back side (front) doped silicon layer
The part of sheath covering.
According to the difference of protection composition of layer, if protective layer is smaller for the performance influence of silica-based solar cell, such as
It is above-mentioned using the silicon oxide layer containing doped source as protective layer the case where, the back side (front) protective layer can remove, and can not also go
It removes；If protective layer is affected for the performance of silica-based solar cell, need to remove the back side (front) protective layer.
It is understood that for only there is tunnelling passivation layer in 1 front of P-type crystal silicon matrix or the back side and adulterate more
For the solar battery of crystal silicon layer structure, corresponding step is executed in 1 front of P-type crystal silicon matrix or the back side.
Step S6 forms alumina layer 7.
The case where back side tunnelling passivation layer 10 and back side doped silicon layer 11 are provided with for the back side of P-type crystal silicon matrix 1
For, overleaf oxygen is formed on the region of the not set back side doped silicon layer 11 of on doped silicon layer 11 and back side tunnelling passivation layer 10
Change aluminium layer 7；The feelings of back side tunnelling passivation layer 10 and back side doped silicon layer 11 are not provided with for the back side of P-type crystal silicon matrix 1
For condition, then alumina layer 7 is formed in the back surface of P-type crystal silicon matrix 1.
Alumina layer 7 can be formed by Atomic layer deposition method (Atomic Layer Deposition, ALD).
Step S7 forms the coating 8 at positive antireflection layer 5 and the back side.
Coating 8 is formed on alumina layer 7.
The case where front of P-type crystal silicon matrix 1 is provided with positive tunnelling passivation layer 3 and front doped silicon layer 4 is come
It says, forms antireflection layer on the region of front doped silicon layer 4 and the not set front doped silicon layer 4 of positive tunnelling passivation layer 3
5；For the case where front of P-type crystal silicon matrix 1 is not provided with positive tunnelling passivation layer 3 and front doped silicon layer 4, then
Antireflection layer 5 is formed on the emitter layer 2 of P-type crystal silicon matrix 1.
If antireflection layer 5 and coating 8 use identical material, the formation of antireflection layer 5 and the formation of coating 8
It can carry out simultaneously.
Step S8, printing are used to form the rear electrode slurry of rear electrode 9.
Silk-screen printing technique can be used and carry out printed back electrode slurry.
For rear electrode 9 described above includes the case where first electrode 91 and second electrode 92, in printed back
It also needs to carry out before electrode slurry the step of forming via hole X on coating 8, laser or the method shape of chemical attack can be passed through
At via hole X.The printing process of rear electrode slurry then specifically includes the slurry that first printing is used to form first electrode 91, republishes
It is used to form the slurry of second electrode 92.
Step S9, printing are used to form the front electrode slurry of front electrode 6.
Silk-screen printing technique can be used to print front electrode slurry.
Step S10, high temperature sintering.
The temperature of sintering can for 600 DEG C~900 DEG C (such as 600 DEG C, 650 DEG C, 700 DEG C, 750 DEG C, 800 DEG C, 850 DEG C,
900 DEG C etc.), time of sintering can be 10 seconds to 3 minutes, such as 10 seconds, 20 seconds, 30 seconds, 40 seconds, 60 seconds, 70 seconds, 80 seconds,
90 seconds, 100 seconds, 110 seconds, 120 seconds, 130 seconds, 140 seconds, 150 seconds, 160 seconds, 170 seconds, 180 seconds etc..
Based on aforementioned p-type crystal silicon solar energy battery, the utility model embodiment provides a kind of photovoltaic module, the photovoltaic
Component includes the cover board set gradually, the first packaging adhesive film, battery strings, the second packaging adhesive film and backboard, and battery strings include multiple
Solar battery, wherein solar battery is above-mentioned silica-based solar cell provided by the embodiment of the utility model.
In the utility model embodiment, cover board is glass plate, and the material of the first packaging adhesive film and the second packaging adhesive film is EVA
(ethylene-acetate ethylene copolymer) or POE (ethylene-octene copolymer), backboard can be glass plate, or TPT
(PVF/PET/PVF) plate.Photovoltaic module provided by the embodiment of the utility model may also include frame, the also fillable sealant of frame
(such as silica gel).
The technical solution of the utility model is done by taking silica-based solar cell shown in Fig. 2 as an example below and is further said
It is bright.
As shown in Fig. 2, this should solar battery include P-type crystal silicon matrix 1, setting is in the front of P-type crystal silicon matrix 1
Emitter layer 2, the positive tunnelling passivation layer 3 on emitter layer 2 is set, is arranged on positive tunnelling passivation layer 3 and front
The front doped silicon layer 4 of the P elements doping of electrode corresponding region, is arranged on front doped silicon layer 4 and positive tunnelling is passivated
Antireflection layer 5 on 3 not set 4 region of front doped silicon layer of layer, is arranged in the front electrode 6 on antireflection layer 5, is arranged in P
The alumina layer 7 at 1 back side of type crystal silicon substrate, is arranged in the coating 8 on alumina layer 7, the back side on coating 8 is arranged in
Circular vias X is offered on electrode 9, alumina layer 7 and coating 8.
Wherein, P-type crystal silicon matrix 1 is p type single crystal silicon piece, and positive tunnelling passivation layer 3 is silicon oxide layer, front doped silicon
Layer 4 is doped polysilicon layer, and antireflection layer 5 is silicon nitride layer；
Front electrode is grid line structure, wherein main gate line 4,1.1 millimeters of width, secondary grid line 102, and 40 microns of width,
It 1.5 millimeters of spacing, is formed by silver paste；
Coating 8 is silicon nitride layer；
Via hole X is offered 142 × 142 (row 142 i.e. every, 142 row) totally altogether, and the aperture of via hole X is 50 μm, and adjacent two
The spacing (the distance between center of circle) of a via hole X is 1100 microns；
Rear electrode 9 includes first electrode 91 and second electrode 92, and wherein first electrode 91 is in linear, by silver paste shape
At for the series welding of conductive confluence and solar battery, quantity is 4, width 1.6mm；Second electrode 92 is by aluminum slurry
The aluminium electrode of formation is in line style, and totally 102, the width of every second electrode 92 is 70 microns, adjacent two second electrodes 92 it
Between distance be 1.1 millimeters, second electrode 92 with for it is conductive converge, the first electrode 91 of series welding it is vertical, and second electrode 92
It is contacted across via hole X with P-type crystal silicon matrix 1.
Silica-based solar cell shown in Fig. 2 the preparation method is as follows:
Step 101, NaOH and H are utilized2O2Mixed aqueous solution p type single crystal silicon piece is cleaned, later utilize hydroxide
Positive making herbs into wool of the sodium water solution in p type single crystal silicon piece.
Step 102, the front of the p type single crystal silicon piece by the method for boiler tube phosphorus diffusion after making herbs into wool carries out phosphorus doping preparation
Emitter layer 2 forms P-N junction.
Step 103, the p type single crystal silicon piece after diffusion is impregnated in TMAH solution, to p type single crystal silicon piece back surface
Carry out it is smooth, later use HF aqueous cleaning silicon wafer.
Step 104, positive tunnelling is used as in p type single crystal silicon piece front surface growing silicon oxide film using boiler tube thermal oxidation method
Passivation layer 3.
Step 105, intrinsic polysilicon film is grown on positive tunnelling passivation layer 3 with LPCVD method, and is infused with phosphonium ion
The mode entered carries out phosphorus doping to intrinsic polycrystal film, forms front doped polysilicon layer.
Step 106, using laser scanning irradiation front doped polysilicon layer region corresponding with front electrode, in front
Doped polysilicon layer region corresponding with front electrode forms PSG protective layer, wherein the pattern and front electrode of laser scanning
Pattern is identical.
Step 107, using the region that is not covered by PSG protective layer of aqueous slkali removal front doped polysilicon layer, formed with
The identical front doped polysilicon layer of front electrode pattern recycles hydrofluoric acid to remove PSG protective layer later.
Step 108, aluminum oxide film is grown on the back surface of P-type crystal silicon wafer.
Step 109, silicon nitride film is respectively formed on emitter layer 2 and aluminum oxide film.
Step 110, via hole X is opened up in the aluminium oxide/silicon nitride stack structure at the p type single crystal silicon piece back side using laser.
Step 111, silk-screen printing is used to form the slurry of the first electrode 91 in rear electrode 9.
Step 112, silk-screen printing is used to form the slurry of the second electrode 92 in rear electrode 9.
Step 113, silk-screen printing is used to form the slurry of front electrode.
Step 114, electrode slurry is sintered.
The above is merely for convenience of it will be understood by those skilled in the art that the technical solution of the utility model, not to
Limit the utility model.Within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on,
It should be included within the scope of protection of this utility model.
Claims (10)
1. a kind of silica-based solar cell, the silica-based solar cell include:
P-type crystal silicon matrix,
The emitter layer of the P-type crystal silicon front side of matrix is set,
Positive tunnelling passivation layer on the emitter layer is set,
The front doped silicon layer of group V element doping on the positive tunnelling passivation layer regional area is set,
The region of the front doped silicon layer and the not set front doped silicon layer of the positive tunnelling passivation layer is set
On antireflection layer, and,
Front electrode on the antireflection layer is set；
Wherein, the front electrode passes through the antireflection layer and the front doped silicon layer Ohmic contact.
2. silica-based solar cell according to claim 1, which is characterized in that the front doped silicon layer and the front
The pattern of electrode is corresponding.
3. silica-based solar cell according to claim 1, which is characterized in that the front tunnelling passivation layer is selected from oxidation
At least one of silicon layer, silicon oxynitride layer and hydrogenated amorphous silicon oxide layer.
4. described in any item silica-based solar cells according to claim 1~3, which is characterized in that the silica-based solar electricity
Pond further include: the alumina layer at the P-type crystal silicon matrix back side is set, the coating on the alumina layer is set,
And it is arranged in the supratectal rear electrode；Wherein, the rear electrode passes through the coating and the aluminium oxide
Layer and the P-type crystal silicon matrix Ohmic contact.
5. silica-based solar cell according to claim 4, which is characterized in that the rear electrode include first electrode and
Second electrode, the first electrode in linear, the second electrode be arranged on the coating be located at the first electrode with
Outer region, and the second electrode is contacted with the first electrode；
Described aluminium oxide etc. and the coating are provided with via hole, and the second electrode is brilliant by the via hole and the p-type
The contact of body silicon substrate.
6. described in any item silica-based solar cells according to claim 1~3, which is characterized in that the silica-based solar electricity
Pond further include: the back side tunnelling passivation layer at the P-type crystal silicon matrix back side is set, is arranged in the back side tunnelling passivation layer
The back side doped silicon layer of iii group element doping on regional area, is arranged at the back side doped silicon layer and the back side
Alumina layer on the region of the not set back side doped silicon layer of tunnelling passivation layer, is arranged in the covering on the alumina layer
Layer, and be arranged in the supratectal rear electrode；Wherein, the rear electrode passes through the coating and the oxidation
Aluminium layer and the back side doped silicon layer Ohmic contact.
7. silica-based solar cell according to claim 6, which is characterized in that the back side doped silicon layer and the back side
The pattern of electrode is corresponding.
8. silica-based solar cell according to claim 6, which is characterized in that the back side tunnelling passivation layer is selected from oxidation
At least one of silicon layer, alumina layer, vanadium oxide layer, tungsten oxide layer, nickel oxide layer, molybdenum oxide layer and protochloride layers of copper.
9. a kind of silica-based solar cell, the silica-based solar cell include:
P-type crystal silicon matrix,
The back side tunnelling passivation layer at the P-type crystal silicon matrix back side is set,
The back side doped silicon layer of iii group element doping on the back side tunnelling passivation layer regional area is set,
The region of the back side doped silicon layer and the not set back side doped silicon layer of the back side tunnelling passivation layer is set
On alumina layer,
Coating on the alumina layer is set,
It is arranged in the supratectal rear electrode,
The emitter layer of the P-type crystal silicon front side of matrix is set,
Antireflection layer on the emitter layer is set, and,
Front electrode on the antireflection layer is set；
Wherein, the rear electrode passes through the coating and the alumina layer and the back side doped silicon layer Ohmic contact,
The front electrode passes through the antireflection layer and the emitter layer Ohmic contact.
10. a kind of photovoltaic module, including cover board, the first packaging adhesive film set gradually, battery strings, the second packaging adhesive film and back
Plate, the battery strings include multiple solar batteries, which is characterized in that the solar battery is any one of claim 1~9
The silica-based solar cell.
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