CN106252191A - Exchangeable nozzle ICP generating means in plasma chemistry etching apparatus - Google Patents
Exchangeable nozzle ICP generating means in plasma chemistry etching apparatus Download PDFInfo
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- CN106252191A CN106252191A CN201610623985.2A CN201610623985A CN106252191A CN 106252191 A CN106252191 A CN 106252191A CN 201610623985 A CN201610623985 A CN 201610623985A CN 106252191 A CN106252191 A CN 106252191A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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Abstract
The invention discloses the exchangeable nozzle ICP generating means in a kind of plasma chemistry etching apparatus, belong to optical surface mirror processing precise processing unit (plant) technical field.This ICP generating means includes nozzle, plasma torch pipe, the induction coil being sheathed on outside plasma torch pipe, high pressure tesla ignition coil, radio-frequency power supply and adapter, radio-frequency power supply and adapter are that induction coil is powered, and high pressure tesla ignition coil is powered by external power source；Nozzle and the front end of ICP generating means plasma quarter bend are dismountable fixing be connected, and the size realized removing function by changing the nozzle of different inner diameters is adjusted.The ICP generating means using the present invention can obtain the removal function of ideal dimensions to optical element processing, it is achieved full frequency band face shape error is restrained.
Description
Technical field
The present invention relates to a kind of plasma chemistry etching device for heavy caliber complex surface machining, be specifically related to
ICP generating means in gas ions chemical etching device, belongs to optical element processing precise processing unit (plant) technical field.
Background technology
Aspherical optical element can improve Performance of Optical System, simplied system structure, and increasing optical system is selected
Select use aspherics reflecting mirror.Large telescope construction, automobile and space flight production in enormous quantities, micro-electronic manufacturing, electronics lead to
The demand of optical super-precision surface is constantly increased by letter, imaging of medical and other various large-scale science plans etc., complexity
It is continuously increased, causes the requirement to optical process more and more higher.
Conventional non-spherical reflector processing method is CCOS (computer controlled optical surfacing) technology.In traditional handicraft,
Adopt the processing of the being determined property of small abrasive nose of the asphalt material that computerizeds control.Owing to applying positive pressure, meeting at surface of the work
Workpiece is made to produce sub-surface damage.For the reflecting mirror of complicated face shape, the change of curvature will result in bistrique and misfits with minute surface, from
And affect face shape convergence.Magnetorheological processing technique is also conventional processing method, but owing to its single-point machining area is less, leads
Cause working (machining) efficiency is relatively low, and is readily incorporated medium-high frequency error.
In addition with the processing method that some are contactless.Compared to the processing method of contact, contactless method
Do not result in sub-surface damage, and without surface contamination.Wherein, ion beam processing technical maturity, it is widely used for heavy caliber non-
Sphere is processed.Its application stage is similar with magnetorheological technique, is all to apply surface figure accuracy is higher when.Ion beam technology is
Big advantage is exactly that it has stable removal function.But the restrictive condition of maximum must use exactly under vacuo, to electromechanics
The design of system, maintenance and operation have the highest requirement；In addition ion beam processing technique clearance is too low, limits answering of it
Use scope.Except simple ion beam physical sputtering material is removed, use for reference wide variety of RIE in semi-conductor industry (react from
Son etching) technology, create some and complete, by chemical reaction mode, the method that material is removed.PACE (throw by plasmaassisted
Light technology) it is exactly a kind of contactless chemical processes improved based on RIE method, produce active group and work by ionization
Part has reacted material and has removed, and removal efficiency is the highest.But the thickness of the method requirement workpiece to be machined is less than 10mm, and still
Old work under vacuo.
For the deficiency of above-mentioned noncontact processing mode, Osaka, Japan university and U.S. Lawrence Livermore country
Laboratory proposes different method of polishing normal pressure plasma respectively.Remove principle and be same as PACE technology, but equipment all exists
Operated at atmospheric pressure, active group density significantly increases, thus clearance is the biggest.But the PCVM technology stability of Osaka University is not
Good, machining reproducibility is low, is not suitable for the requirement of definitiveness processing.The RAP skill of Lawrence Livermore National Laboratory
Art then limits due to quarter bend specification, removes function size single；In addition motion is also had the highest requirement.
Tradition small abrasive nose processing technique is for the face shape error of different frequency range, it is necessary to the bistrique changing different-diameter is disappeared
Remove.To this end, the quick bistrique switching device of traditional machining tool all specialized designs.Want to improve plasma processing method
The scope of application, it is also desirable to similar function.A kind of feasible mode is to change ICP quarter bend, but is because maintaining plasma
Induction coil makes to change ICP quarter bend and is inconvenient for.ICP quarter bend and coil cooling, institute to be disconnected must be waited until before replacing
There are power supply, trachea and water cooling plant and reconnect after new ICP quarter bend switches.For various sizes of ICP quarter bend, it is necessary to
Consider whether induction coil size mates.After all assembling is complete, needs test can produce stable plasma, remove
Function is the most suitable, therefore, uses the form changing ICP quarter bend to realize the replacing of different-diameter bistrique in the actual course of processing
In there is sizable limitation.
Summary of the invention
In view of this, the invention provides the exchangeable nozzle ICP generating means of a kind of plasma chemistry etching apparatus,
The replacing of different-diameter bistrique is realized, it is thus achieved that the removal function of ideal dimensions, it is achieved complete by changing the nozzle of different-diameter
Frequency range face shape error is restrained.
Exchangeable nozzle ICP generating means in a kind of plasma chemistry etching apparatus, this ICP generating means includes spray
Mouth, plasma torch pipe, the induction coil being sheathed on outside plasma torch pipe, high pressure tesla ignition coil, radio-frequency power supply and
Adapter, radio-frequency power supply and adapter are that induction coil is powered, and high pressure tesla ignition coil is powered by external power source；Spray
Mouth and the front end of ICP generating means plasma quarter bend are dismountable fixing be connected, by changing the nozzle of different inner diameters
Realize the size to removing function to be adjusted.
Further, the nozzle on described ICP generating means uses water-cooling structure.
Further, described nozzle includes nozzle inner core, water cooled housing top cover, water cooled housing and guiding gutter, nozzle inner core,
Forming a cavity closed after water cooled housing top cover and water cooled housing assembling, guiding gutter is fixedly connected on nozzle inner core correspondence
The outer surface of chamber portion, the correspondence of two ends up and down of water cooled housing correspondence cavity is machined with water-cooled liquid entrance and the outlet of water-cooled liquid,
Nozzle is connected by water cooled housing top cover is fixing with the installing plate of plasma torch pipe lower end.
Further, also including a radome, plasma torch pipe and induction coil are sleeved on it by described radome
Internal.
Further, the external diameter of described plasma torch pipe is 20mm, the external diameter of described nozzle inner core and plasma torch
The external diameter of pipe is consistent, and in nozzle, core inner is made up of cylindrical section, contraction section and expansion segment, and the total length of nozzle inner core is 35mm,
The a length of 10mm of cylindrical section, a length of 8mm of contraction section, expansion segment length 17mm, cylindrical section is used for and plasma quarter bend lower end
Installing plate realize coordinate and install, the minimum diameter needed for a diameter of processing between contraction section and expansion segment, expansion segment expand
A diameter of 15mm after Zhang.
Further, described plasma chemistry etching apparatus includes ICP generating means, motion, gas supply dress
Put and exhaust gas processing device；Described ICP generating means integral erection is above motion, and gas supply device is via gas matter
Amount flow controller is connected with plasma torch pipe, and gas supply device provides the gas needed for reaction for plasma torch pipe,
ICP generating means is by radio-frequency power supply and the firing power of adapter regulation setting and is carried on induction coil, is also turned on
High pressure tesla ignition coil makes its generation high-voltage spark that discharges, and high-voltage spark generates electronics also inside quartz torch pipe
Puncture the high-purity argon gas in intervalve and outer tube, under the electromagnetic field excitation that radio-frequency coil produces, puncture high-purity argon gas further,
Finally light plasma and form stable plasma torch flame；Motion drives ICP generating means certain at surface of the work
Distance moves according to the movement locus determined, active group is ejected into surface of the work by air-flow, occurs chemical reaction to generate and waves
The property sent out gaseous material, it is achieved ad-hoc location quantitatively removes the purpose of material；Exhaust gas processing device is to tail reacted in Processing Room
Gas processes.
Further, described motion uses 5-shaft linkage numerical control center, and this numer centre includes x-axis, y-axis, z-axis, u
Axle and v axle, wherein x-axis and y-axis use linear electric motors to drive, and linear electric motors drive bigger the speed of service than servomotor acceleration
Faster, appointment Working position can be arrived in time, be suitable for processing large aperture workpiece.
Further, the material of described nozzle inner core is copper, silver, platinum or pottery, nozzle inner core and radome UNICOM and
Ground connection, plasma torch pipe is in contact with it does not has secondary discharge phenomenon.
Beneficial effect:
1, the etching apparatus simple in construction, with low cost of the present invention, uses atmospheric plasma process technology, and based on change
Learn reaction and realize optical material removal, do not produce sub-surface damage, produce without residual stress layer.
2, the present invention is by using the form changing different size nozzle to realize the replacing of different-diameter bistrique, can be to going
Except the size of function is adjusted, it is thus achieved that the removal function of ideal dimensions, it is achieved full frequency band face shape error is restrained.
3, the present invention uses CFD (Fluid Mechanics Computation) numerical simulation, is optimized the parameter of nozzle inner core, in nozzle
The contraction section of core can limit plasma, and function is removed in regulation；Line is compressed into after nozzle inner core lowest calibre
Closely, but if now losing constraint and will again expanding, beam diameter becomes big again, causes removing function size unpredictable.
And if nozzle rear portion is always maintained at the diameter at lowest calibre, due to space continued compression, press close to the cooling gas beam of outer wall
Stream can disturb the high-temperature plasma at center, causes flame-out phenomenon.Expansion segment after contraction section prevents the quick expansion of beam diameter
, will not stop working because of the interference of cooling gas again.
4, x-axis and the y-axis of the motion in present device uses linear electric motors, and movement velocity is fast, is suitable to processing big
Bore workpiece, can realize trace and remove when face shape has degree of precision, can reduce heat deposition simultaneously.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention；
Fig. 2 is the usual plasma quarter bend structural representation of the PCET in the present invention；
Fig. 3 is to increase the plasma torch tubular construction schematic diagram of PCET after nozzle and radome in the present invention；
Fig. 4 is the structural representation of nozzle in the present invention.
Wherein, 1-radio-frequency power supply, 2-adapter, 3-radio-frequency coil, 4-plasma torch pipe, 5-coolant circulation pump, 6-gas
Body feeding, 61-cooling and auxiliary source of the gas, 62-work source of the gas, 63-source of oxygen, 7-cooling gas entrance, 8-auxiliary gas entrance,
9-work gas entrance, 10-Processing Room, 11-nozzle, 11-1-nozzle inner core, 11-2-water cooled housing top cover, 11-3-water cooled housing,
The outlet of 11-4-guiding gutter, 11-5-water-cooled liquid entrance, 11-6-water-cooled liquid, 12-high pressure tesla ignition coil, 13-radome,
14-motion, 15-exhaust gas processing device.
Detailed description of the invention
Develop simultaneously embodiment below in conjunction with the accompanying drawings, describes the present invention.
As shown in Figure 1, the invention provides the exchangeable nozzle ICP in a kind of plasma chemistry etching apparatus to occur
Device, this ICP generating means includes nozzle 11, plasma torch pipe 4, the induction coil 3 being sheathed on outside plasma torch pipe, height
Pressure tesla ignition coil 12, radome 13, radio-frequency power supply 1 and adapter 2, radio-frequency power supply 1 and adapter 2 coordinate for the line of induction
Circle 3 power supply, high pressure tesla ignition coil 12 is powered by external power source, and described radome 13 is by plasma torch pipe 4 He
Induction coil 3 is set with therein；Nozzle 11 and the front end of ICP generating means plasma quarter bend 4 are dismountable fixing
Connecting, the size realized removing function by changing the nozzle 11 of different inner diameters is adjusted.
As shown in Figure 2, usual plasma quarter bend is provided with the cooling gas entrance 7, auxiliary being connected with gas supply device
Help gas entrance 8 and work gas entrance 9, but the shapes and sizes of this structure uncontrollable plasma torch flame.
As shown in Figure 3, the change of ICP generating means nozzle diameter realizes by changing water-cooled nozzle 11, it is not necessary to consider
Quarter bend and the matching problem of coil.
As shown in Figure 4, nozzle 11 includes nozzle inner core 11-1, water cooled housing top cover 11-2, water cooled housing 11-3 and leads
A cavity closed is formed after chute 11-4, nozzle inner core 11-1, water cooled housing top cover 11-2 and water cooled housing 11-3 assembling,
Guiding gutter 11-4 is fixedly connected on nozzle inner core 11-1 the outer surface of corresponding chamber portion, water cooled housing 11-3 correspondence cavity
Up and down two ends correspondence is machined with water-cooled liquid entrance 11-5 and water-cooled liquid outlet 11-6, nozzle 11 by water cooled housing top cover 11-2 with
The installing plate of plasma torch pipe 4 lower end is fixing to be connected；
The material of nozzle inner core 11 is copper, silver, platinum or pottery, nozzle inner core 11 and radome 13 UNICOM and ground connection, etc.
Gas ions torch pipe is in contact with it does not has secondary discharge phenomenon.
The external diameter of plasma torch pipe 4 is 20mm, the external diameter of nozzle inner core 11-1 and the external diameter one of plasma torch pipe 4
Causing, be made up of cylindrical section, contraction section and expansion segment inside nozzle inner core 11-1, the total length of nozzle inner core 11-1 is 35mm, circle
Cylindrical length is 10mm, a length of 8mm of contraction section, expansion segment length 17mm, and cylindrical section is used for and plasma quarter bend 4 lower end
Installing plate realizes coordinating and installing, the minimum diameter needed for a diameter of processing between contraction section and expansion segment, and expansion segment is expanded
After a diameter of 15mm.
As shown in Figure 1, plasma chemistry etching apparatus includes ICP generating means, motion 14, gas supply dress
Putting 6 and exhaust gas processing device 15, ICP generating means integral erection is above digital control platform 14, and gas supply device 6 is via gas
Mass flow controller is connected with plasma torch pipe 4, needed for gas supply device 6 provides reaction for plasma torch pipe 4
Gas, ICP generating means is adjusted to the firing power of 800～1200W by radio-frequency power supply 1 and adapter 2 and is carried in sensing
On coil 3, being also turned on high pressure tesla ignition coil 12 and make its generation high-voltage spark that discharges, high-voltage spark is at quartz torch
Pipe 4 is internal to be generated electronics and punctures the high-purity argon gas in intervalve and outer tube, and the electromagnetic field simultaneously produced at radio-frequency coil 3 swashs
Encourage the lower high-purity argon gas that punctures further, finally light plasma and form stable plasma torch flame；Motion 14 according to
The movement locus determined moves, and drives ICP generating means to move at a certain distance from surface of the work, and active group is sprayed by air-flow
To surface of the work, chemical reaction is occurred to generate volatile gaseous material, it is achieved ad-hoc location quantitatively removes the purpose of material；Tail gas
Tail gas reacted in Processing Room 10 is processed by processing means 15；Gas supply device 6 comprises cooling and auxiliary source of the gas
61, work source of the gas 62 and source of oxygen 63, three of the above source of the gas connects the cooling gas entrance 7 in plasma torch pipe 4, auxiliary respectively
Gas entrance 8 and work gas entrance 9.
Motion 14 uses 5-shaft linkage numerical control center, and this numer centre includes x-axis, y-axis, z-axis, u axle and v axle, its
Middle x-axis and y-axis use linear electric motors to drive, and linear electric motors drive the speed of service bigger than servomotor acceleration faster, can and
Time arrive specify Working position, be suitable for processing large aperture workpiece.
In embodiment, working gas is Ar, reacting gas CF4, process SiC material workpiece.In plasma producing apparatus
CF4Be excited, produce excited state F atom, and with in SiC Si occur following chemical reaction:
Si+4F*→SiF4↑
Reaction product is gas, departs from and absorbs into exhaust gas processing device, it is achieved material is removed.
In the present embodiment, plasma quarter bend 4 is installed on the fitness machine at 5-shaft linkage numerical control center together with radome 13
On structure 14, motion 14 is connected communication with host computer, is accurately controlled motor movement.
In the present embodiment, motion 14 uses linear electric motors to drive.Linear electric motors have bigger acceleration and the highest operation
Speed, coordinates efficient PCET processing unit (plant), can realize trace when face shape has degree of precision and remove, can reduce heat simultaneously
Amount deposition.
The present embodiment plasma quarter bend 4 front end adds water-cooled nozzle 11, can limit isoionic beam diameter, it is thus achieved that no
With the removal function of size, take away partial heat simultaneously, decrease heat and deposit on workpiece.
The concrete operation step of the present invention is:
Step one, according to this surface equation, utilize processing algorithm to generate machining control file, i.e. generate 5-shaft linkage numerical control
The movement locus at center and processing residence time.
Step 2, unlatching coolant circulation pump 5 are passed through cooling water in radio-frequency coil 3 and water-cooled nozzle 11, then open cold
But and the valve of auxiliary source of the gas 6, a high-purity argon gas environment can be set up in plasma quarter bend 4 after a few minutes, convenient
The generation of plasma.
Step 3, after above-mentioned preparation completes, by the power adjustments of radio-frequency power supply 1 to igniting power demand that is 800
～1200W, it is carried on radio-frequency coil 3 simultaneously, prepares for plasma igniting.
Step 4, connection high pressure tesla ignition coil 12 make its generation high-voltage spark that discharges, and high-voltage spark is waiting
Gas ions quarter bend 4 is internal to be generated electronics and punctures the high-purity argon gas in intervalve and outer tube, produces at radio-frequency coil 3 simultaneously
Puncture high-purity argon gas under electromagnetic field excitation further, finally light plasma and form stable plasma torch flame.
Step 5, formed high temperature and after stable plasma torch flame, open the valve of work source of the gas 62, to central canal
It is passed through working gas such as carbon tetrafluoride (CF4), sulfur hexafluoride (SF6), Nitrogen trifluoride (NF3) etc., forms active group, through 5
～it is stable after 10 minutes.
Step 6, the machining control document control motion generated in step one is utilized to move according to the movement locus that determines
Dynamic, drive ICP generating means to move at a certain distance from surface of the work, active group is ejected into surface of the work by air-flow, occurs
Chemical reaction generates volatile gaseous material, it is achieved ad-hoc location quantitatively removes the purpose of material, completes processing.
Step 7, as the nozzle 11 of different bore need to be changed, first stop-motion 14, close radio-frequency power supply 2, turn off
Source of the gas 6 and water cooling plant 5.Nozzle 11 is fastened by screw thread with radome 13, can be with fast assembling-disassembling.After backing out, change suitably
Nozzle inner core 11-1, then repeats above step.
In sum, these are only presently preferred embodiments of the present invention, be not intended to limit protection scope of the present invention.
All within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included in the present invention's
Within protection domain.
Claims (8)
1. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus, this ICP generating means include nozzle, etc.
Gas ions torch pipe, the induction coil being sheathed on outside plasma torch pipe, high pressure tesla ignition coil, radio-frequency power supply and coupling
Device, radio-frequency power supply and adapter are that induction coil is powered, and high pressure tesla ignition coil is powered by external power source；Its feature
Being, described nozzle and the front end of ICP generating means plasma quarter bend are dismountable fixing be connected, by changing difference
The size that the nozzle of internal diameter realizes removing function is adjusted.
2. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 1, its feature exists
In, the nozzle on described ICP generating means uses water-cooling structure.
3. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 1 or 2, it is special
Levying and be, described nozzle includes nozzle inner core, water cooled housing top cover, water cooled housing and guiding gutter, nozzle inner core, water cooled housing top
Lid and water cooled housing form a cavity closed after assembling, guiding gutter is fixedly connected on nozzle inner core corresponding chamber portion
Outer surface, the correspondence of two ends up and down of water cooled housing correspondence cavity is machined with water-cooled liquid entrance and the outlet of water-cooled liquid, and nozzle passes through water
Cold closure head is fixing with the installing plate of plasma torch pipe lower end to be connected.
4. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 3, its feature exists
In, also including a radome, plasma torch pipe and induction coil are set with therein by described radome.
5. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 3, its feature exists
In, the external diameter of described plasma torch pipe is 20mm, and the external diameter of described nozzle inner core is consistent with the external diameter of plasma torch pipe, spray
In mouth, core inner is made up of cylindrical section, contraction section and expansion segment, and the total length of nozzle inner core is 35mm, and cylindrical section is a length of
10mm, a length of 8mm of contraction section, expansion segment length 17mm, cylindrical section realizes for the installing plate with plasma quarter bend lower end
Coordinate and install, the minimum diameter needed for a diameter of processing between contraction section and expansion segment, expansion segment expansion after a diameter of
15mm。
6. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 1, its feature exists
In, described plasma chemistry etching apparatus includes ICP generating means, motion, gas supply device and vent gas treatment dress
Put；Described ICP generating means integral erection above motion, gas supply device via gas mass flow controller with
Plasma torch pipe is connected, and gas supply device provides the gas needed for reaction for plasma torch pipe, and ICP generating means passes through
Radio-frequency power supply and adapter regulate the firing power set and are carried on induction coil, are also turned on high pressure tesla ignition lead
Circle makes its generation high-voltage spark that discharges, and high-voltage spark generates electronics and punctures intervalve and outer tube inside quartz torch pipe
In high-purity argon gas, radio-frequency coil produce electromagnetic field excitation under puncture high-purity argon gas further, finally light plasma
Form stable plasma torch flame；Motion drives ICP generating means according to determining at a certain distance from surface of the work
Movement locus moves, and active group is ejected into surface of the work by air-flow, occurs chemical reaction to generate volatile gaseous material, it is achieved
Ad-hoc location quantitatively removes the purpose of material；Tail gas reacted in Processing Room is processed by exhaust gas processing device.
7. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 6, its feature exists
In, described motion uses 5-shaft linkage numerical control center, and this numer centre includes x-axis, y-axis, z-axis, u axle and v axle, wherein x
Axle and y-axis use linear electric motors to drive, and linear electric motors drive the speed of service bigger than servomotor acceleration faster, can arrive in time
Reach appointment Working position, be suitable for processing large aperture workpiece.
8. the exchangeable nozzle ICP generating means in plasma chemistry etching apparatus as claimed in claim 3, its feature exists
In, the material of described nozzle inner core is copper, silver, platinum or pottery, nozzle inner core and radome UNICOM and ground connection.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107969061A (en) * | 2017-12-23 | 2018-04-27 | 四川大学 | A kind of air inductively coupled plasma generator for processing silica-base material |
| CN108181374A (en) * | 2018-02-08 | 2018-06-19 | 聚光科技(杭州)股份有限公司 | The method of work of plasma-mass spectrometry system |
| CN108972163A (en) * | 2018-09-07 | 2018-12-11 | 中国工程物理研究院激光聚变研究中心 | Processing method and aspherical optical element |
| CN109087845A (en) * | 2018-09-25 | 2018-12-25 | 南方科技大学 | Monocrystal material burnishing device and polishing method based on inductively coupled plasma body |
| CN109451644A (en) * | 2018-12-24 | 2019-03-08 | 四川大学青岛研究院 | Plasma jet, spray head switching method and low temperature plasma equipment |
| CN110501326A (en) * | 2018-07-16 | 2019-11-26 | 成都艾立本科技有限公司 | The method and its implementing device directly analyzed based on plasma jet solid ablation |
| CN113365402A (en) * | 2020-03-06 | 2021-09-07 | 上海宏澎能源科技有限公司 | Apparatus for confining a plasma beam |
| CN114040559A (en) * | 2021-11-09 | 2022-02-11 | 广东电网有限责任公司电力科学研究院 | GIL three-binding-point surface plasma processing device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4140892A (en) * | 1976-02-16 | 1979-02-20 | Niklaus Muller | Plasma-arc spraying torch |
| US20050109738A1 (en) * | 2003-11-21 | 2005-05-26 | Hewett Roger W. | Color coding of plasma arc torch parts and part sets |
| JP2008212969A (en) * | 2007-03-02 | 2008-09-18 | Nippon Steel & Sumikin Welding Co Ltd | Plasma torch |
| CN103353763A (en) * | 2013-06-08 | 2013-10-16 | 中国地质大学（武汉） | Three-dimensional mobile platform and ICP torch tube positioning device applied therewith |
| CN203530432U (en) * | 2013-09-26 | 2014-04-09 | 韦学运 | Plasma cladding device |
| CN104386922A (en) * | 2014-09-28 | 2015-03-04 | 中国科学院长春光学精密机械与物理研究所 | Vertical type processing method and apparatus for large-aperture high-gradient space optical aspheric reflector |
| CN105792496A (en) * | 2016-02-26 | 2016-07-20 | 苏州工业职业技术学院 | Atmospheric pressure plasma spraying gun |
-
2016
- 2016-08-02 CN CN201610623985.2A patent/CN106252191B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4140892A (en) * | 1976-02-16 | 1979-02-20 | Niklaus Muller | Plasma-arc spraying torch |
| US20050109738A1 (en) * | 2003-11-21 | 2005-05-26 | Hewett Roger W. | Color coding of plasma arc torch parts and part sets |
| JP2008212969A (en) * | 2007-03-02 | 2008-09-18 | Nippon Steel & Sumikin Welding Co Ltd | Plasma torch |
| CN103353763A (en) * | 2013-06-08 | 2013-10-16 | 中国地质大学（武汉） | Three-dimensional mobile platform and ICP torch tube positioning device applied therewith |
| CN203530432U (en) * | 2013-09-26 | 2014-04-09 | 韦学运 | Plasma cladding device |
| CN104386922A (en) * | 2014-09-28 | 2015-03-04 | 中国科学院长春光学精密机械与物理研究所 | Vertical type processing method and apparatus for large-aperture high-gradient space optical aspheric reflector |
| CN105792496A (en) * | 2016-02-26 | 2016-07-20 | 苏州工业职业技术学院 | Atmospheric pressure plasma spraying gun |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107969061A (en) * | 2017-12-23 | 2018-04-27 | 四川大学 | A kind of air inductively coupled plasma generator for processing silica-base material |
| CN107969061B (en) * | 2017-12-23 | 2023-09-19 | 四川大学 | Atmospheric inductively coupled plasma generator for processing silicon-based materials |
| CN108181374A (en) * | 2018-02-08 | 2018-06-19 | 聚光科技(杭州)股份有限公司 | The method of work of plasma-mass spectrometry system |
| CN110501326A (en) * | 2018-07-16 | 2019-11-26 | 成都艾立本科技有限公司 | The method and its implementing device directly analyzed based on plasma jet solid ablation |
| CN108972163A (en) * | 2018-09-07 | 2018-12-11 | 中国工程物理研究院激光聚变研究中心 | Processing method and aspherical optical element |
| CN109087845A (en) * | 2018-09-25 | 2018-12-25 | 南方科技大学 | Monocrystal material burnishing device and polishing method based on inductively coupled plasma body |
| CN109087845B (en) * | 2018-09-25 | 2024-03-26 | 南方科技大学 | Monocrystalline material polishing device and method based on inductively coupled plasma |
| CN109451644A (en) * | 2018-12-24 | 2019-03-08 | 四川大学青岛研究院 | Plasma jet, spray head switching method and low temperature plasma equipment |
| CN113365402A (en) * | 2020-03-06 | 2021-09-07 | 上海宏澎能源科技有限公司 | Apparatus for confining a plasma beam |
| CN113365402B (en) * | 2020-03-06 | 2023-04-07 | 上海宏澎能源科技有限公司 | Apparatus for confining a plasma beam |
| CN114040559A (en) * | 2021-11-09 | 2022-02-11 | 广东电网有限责任公司电力科学研究院 | GIL three-binding-point surface plasma processing device |
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