CN103456610A - SiC optical material processing device - Google Patents
SiC optical material processing device Download PDFInfo
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- CN103456610A CN103456610A CN2013103667417A CN201310366741A CN103456610A CN 103456610 A CN103456610 A CN 103456610A CN 2013103667417 A CN2013103667417 A CN 2013103667417A CN 201310366741 A CN201310366741 A CN 201310366741A CN 103456610 A CN103456610 A CN 103456610A
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- optical material
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Abstract
The invention discloses an SiC optical material processing device which comprises an inductive coupling plasma generation device, a working gas supply source (8) and a reaction gas supply source (9). Reaction gas which can have chemical reaction with SiC after being stimulated by the inductive coupling plasma generation device is placed in the reaction gas supply source (9), the inductive coupling plasma generation device comprises a plasma torch pipe (34) and an induction coil (35), the plasma torch pipe (34) is sleeved with the induction coil (35), the working gas supply source (8) and the reaction gas supply source (9) are connected with the plasma torch pipe (34), one end of the induction coil (35) is connected with a radio-frequency power source (4), and the other end of the induction coil (35) is grounded through an adjustable resistor R1. The SiC optical material processing device has the advantages of being simple in structure and low in cost, producing no subsurface damage or residual stress in a processing procedure, having high processing efficiency and the like.
Description
Technical field
The present invention relates generally to optical material process equipment field, refers in particular to a kind of SiC optical material process equipment.
Background technology
Fast development along with space astronomy optics, satellite remote sensing technology and large-scale ground based optical systems, the requirement of the indexs such as the service band of optical system, imaging resolution, thermal stability and system weight is more and more stricter, therefore, optical system is just along reflective, heavy caliber, lightweight trend development.In Optical System Design, select suitable reflecting mirror material significant to meeting These parameters.Because Space Optical System exists that manufacture difficulty is large, emission and the restraining factors such as operating cost is high and operational environment is special, the following aspects must be considered with the selection of reflecting mirror material in space: (1) isotropism, dimensionally stable.(2) but polishability.But good polishability is the basic demand of reflecting mirror material, but good polishability is the important indicator that determines mirror performance.(3) can carry out the high reflectance plated film.(4) radioresistance, guarantee that the face shape of speculum under the space radiation condition remains unchanged.Due under the Space-Work environment, the mirror body is after the radiation that is subject to the universe high-energy ray, and shape and physical property aspect must keep stable, and preferential selective radiation stability is material preferably.(5) specific stiffness is large, and thermal deformation coefficient is little.Specific stiffness is large, can reduce the quality of mirror body and framework, increases weight reduction rate, improves the stability of surface figure accuracy; Thermal deformation coefficient is little, can reduce the requirement of heat control system.In sum, the SiC optical material is the optimal material of making spacing reflection mirror and large-scale ground base reflecting mirror.
Because the hardness of SiC optical material is high, therefore, its working (machining) efficiency is low, often lower than 1/10th of glass.In addition, most of SiC optical materials exist various ingredients, make it be difficult to realize the Subnano-class super smooth surface processing.
At present, the processing method of SiC optical material mainly comprises traditional polishing method, method for grinding and computer control certainty finishing method.
The tradition polishing method is applicable to smallclothes and the single-piece work of SiC optical material, and in conjunction with repairing throwing can also solve the aspheric processing problems of part by hand, but its working (machining) efficiency is lower, and the precision convergence is slower, and product quality and process-cycle are difficult for guaranteeing.
Method for grinding has higher material removing rate, but can produce sub-surface damage in grinding process, simultaneously, at surface of the work, forms the residual stress layer.
Computer control certainty finishing method is the key technology that processing obtains higher surface precision, can mainly contain for the method for processing the SiC optical material birotor small tool finishing method, ion beam correction method and magnetic rheological polishing method, but the said method working (machining) efficiency is lower.
Summary of the invention
The technical problem to be solved in the present invention is: the deficiency existed for prior art, provide a kind of simple in structure, with low cost, and the course of processing is without sub-surface damage, without the generation of residual stress layer, the process equipment of the SiC optical material that working (machining) efficiency is high.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of SiC optical material process equipment, comprise inductive coupling plasma generator, working gas supply source and reacting gas supply source, in described reacting gas supply source, be equipped with after exciting by inductive coupling plasma generator and the reacting gas of SiC generation chemical reaction, described inductive coupling plasma generator comprises the plasma torch pipe and is sheathed on the outer induction coil of plasma torch pipe, described working gas supply source is connected with the plasma torch pipe with the reacting gas supply source, one end of described induction coil is connected with radio-frequency power supply, the other end of described induction coil is by adjustable resistor R1 ground connection.
As a further improvement on the present invention:
Be provided with the shielded metal plate between described induction coil and plasma torch pipe outer wall, described shielded metal plate is by tunable capacitor C3 ground connection.
One end of described induction coil is connected with radio-frequency power supply by impedance matching box.
The connection line of described reacting gas supply source and working gas supply source and plasma torch pipe is provided with mass flow controller.
Described plasma torch pipe is installed on one to have on the numerical control motion platform of three-shaft linkage function at least.
Described numerical control motion platform is arranged in a sealing Processing Room, and described sealing Processing Room connects an exhaust gas processing device.
The connection line of described working gas supply source and plasma torch pipe is provided with igniter.
Described induction coil connects a water cooling unit.
Described working gas supply source is connected with outer tube with the middle pipe of plasma torch pipe, and described reacting gas supply source is connected with the inner tube of plasma torch pipe; Perhaps, described working gas supply source is connected with the outer tube of plasma torch pipe, and described reacting gas supply source is connected with the middle pipe of plasma torch pipe.
Described reacting gas supply source is SF
6gas cylinder or NF
3gas cylinder or CF
4gas cylinder.
Compared with prior art, the invention has the advantages that:
1, SiC optical material process equipment of the present invention, simple in structure, with low cost, the using plasma process technology, and realize the removal of SiC optical material based on chemical reaction, surface of the work, without sub-surface damage, produces without the residual stress layer;
2, SiC optical material process equipment of the present invention, its inductive coupling plasma generator adopts plasma torch pipe commonly used in spectrometer equipment, can produce stable plasma, and technology maturation, with low cost;
3, SiC optical material process equipment of the present invention, induction coil is by adjustable resistor ground connection, can regulate the voltage of induction coil earth terminal, by suitably heightening the voltage of earth terminal, just can improve induction coil electromotive force at work, thereby improve the electromotive force of plasma, by high potential plasma strike SiC optical material, can easily destroy the Si-C key in the SiC optical material, and the effect of impact of high potential plasma, make the course of processing of SiC optical material become the course of reaction that physics combines with chemistry, processing speed improves greatly.
The accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
The partial structurtes schematic diagram that Fig. 2 is Fig. 1.
Structural representation when Fig. 3 is applying plasma torch pipe generation plasma torch of the present invention.
Fig. 4 is equivalent circuit diagram when in the present invention, inductive coupling plasma generator is worked.
Fig. 5 realizes SiC optical material flow process chart based on the CCOS forming principle in the present invention.
Marginal data: 1, Processing Room; 2, numerical control motion platform; 4, radio-frequency power supply; 5, impedance matching box; 6, igniter; 7, water cooling unit; 8, working gas supply source; 9, reacting gas supply source; 10, mass flow controller; 11, exhaust gas processing device; 31, Z axis keyset; 32, mount pad; 33, torch pipe installation sleeve; 34, plasma torch pipe; 35, induction coil; 36, shielded metal plate; 37, plasma torch.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
As shown in Figure 1, SiC optical material process equipment of the present invention, comprise inductive coupling plasma generator, working gas supply source 8 and reacting gas supply source 9, in reacting gas supply source 9, be equipped with after exciting by inductive coupling plasma generator and the reacting gas of SiC generation chemical reaction, as SF
6or NF
3or CF
4.Inductive coupling plasma generator comprises plasma torch pipe 34 and is sheathed on the outer induction coil 35 of plasma torch pipe 34, plasma torch pipe 34 is used for producing plasma torch 37(referring to Fig. 3), plasma torch pipe 34 adopts Fassel torch pipe, it is widely used in the ICP-OES spectrometer equipment, cost is low, technology maturation, can be used for producing stable plasma, and provocative reaction gas.Wherein, working gas supply source 8 is connected with outer tube with the middle pipe of plasma torch pipe 34, and reacting gas supply source 9 is connected with the inner tube of plasma torch pipe 34.Certainly, in other embodiments, also can make working gas supply source 8 be connected with the outer tube of plasma torch pipe 34, reacting gas supply source 9 is connected with the middle pipe of plasma torch pipe 34.One end of induction coil 35 is connected with radio-frequency power supply 4, and the other end of induction coil 35 is by adjustable resistor R1 ground connection (referring to Fig. 4).Because Si-C key extremely strong in the SiC material is difficult to destroyed, therefore induction coil 35 is passed through to adjustable resistor R1 ground connection, adjustable resistor R1 can regulate the voltage of induction coil 35 earth terminals, by suitably heightening the voltage of earth terminal, just can improve induction coil 35 electromotive force at work, thereby improve the electromotive force of plasma.By high potential plasma strike SiC optical material, just can easily destroy the Si-C key in the SiC optical material, and the effect of impact of high potential plasma, make the course of processing of SiC optical material become the course of reaction that physics combines with chemistry, processing speed improves greatly.
The present embodiment be take working gas as Ar, and reacting gas is SF
6for example, SF
6gas is excited in plasma producing apparatus, produces the F of excitation state
*, F
*atom contacts with the SiC optical material surface, and with the Si in SiC, following chemical reaction occurs mutually:
Si+4F*→SiF
4↑
The material SiF that reaction produces
4for gas, will break away from and to enter in atmosphere with the SiC optical material surface, thereby realize the removal of material.The present invention relies on chemical reaction to realize the material removal, therefore, in material removal process, without sub-surface damage, without the residual stress layer, produces.
In addition, for increasing the removal speed of SiC optical material, O can be set
2the gas supply source, for passing into a small amount of O when working
2gas, chemical reaction occurs and is in it:
SiC+4F*+O
2→SiF
4↑+CO
2↑
In the present embodiment, too high for preventing plasma potential, affect the stability of course of processing applying plasma, be provided with shielded metal plate 36 between induction coil 35 and plasma torch pipe 34 outer walls, shielded metal plate 36 is by tunable capacitor C3 ground connection (referring to Fig. 4), to reduce when course of processing applying plasma torch 37 contacts the SiC optical material with semiconductor property the secondary discharge phenomenon occurred, improve processing stability.Tunable capacitor C3 is used for regulating the plasma potential height, improves plasma stability.
In the present embodiment, induction coil 35 is connected with radio-frequency power supply 4 by impedance matching box 5, to realize the radio-frequency (RF) energy high-efficiency transfer.
In the present embodiment, plasma torch 37 models can be equivalent to the model that the inductor L2 in equivalent electric circuit shown in Fig. 4 and resistor R2 form, induction coil 35 can be equivalent to inductor L1 in Fig. 4, induction coil 35 is according to being connected with impedance matching box 5 shown in Fig. 4 equivalent electrical diagram, regulating capacitor C1 and C2 carry out impedance matching, and shielded metal plate 36 is according to passing through tunable capacitor C3 ground connection shown in Fig. 4 equivalent electrical diagram.
In the present embodiment, reacting gas supply source 9 and working gas supply source 8 are provided with mass flow controller 10 with the connection line of plasma torch pipe 34, are used for gas flow is controlled.
In the present embodiment, plasma torch pipe 34 is installed on one to have on the numerical control motion platform 2 of three-shaft linkage function at least, can complete at least XYZ three-shaft linkage, to realize plane, sphere and the processing of aspheric SiC optical material; The workpiece clamping table of use numerical control motion platform 2 realizes the installation of workpiece, can improve the stability of machining accuracy and the course of processing; On numerical control motion platform 2 based on CCOS(computer controlled optical surfacing forming technique) forming principle realizes SiC optical material processing can improving machining accuracy and working (machining) efficiency.Particularly, referring to Fig. 2, connect a mount pad 32 on the Z axis keyset 31 of numerical control motion platform 2, plasma torch pipe 34 is installed on mount pad 32 by a torch pipe installation sleeve 33.
In the present embodiment, numerical control motion platform 2 is arranged in a sealing Processing Room 1, and sealing Processing Room 1 connects an exhaust gas processing device 11.Sealing Processing Room 1 separates machining area and the external world, can improve SiC optical material processing stability, and by the extraction of the waste gas that produces in the course of processing, sends in exhaust gas processing device 11 after being processed and enters in atmosphere again, prevents contaminated environment.
In the present embodiment, working gas supply source 8 is provided with igniter 6 with the connection line of plasma torch pipe 34, be used for working gas is discharged, make it carry a small amount of free electron and enter the electromagnetic field zone and accelerated and collide, to produce stable plasma.
In the present embodiment, induction coil 35 connects water cooling units 7, can carry out the heat produced in the course of processing coolingly, improves processing stability and fail safe.
Concrete operation step of the present invention is:
Step 1: start water cooling unit 7;
Step 2: preheating radio-frequency power supply 4 and mass flow controller 10, be 5 minutes warm-up time;
Step 3: open working gas supply source 8 and reacting gas supply source 9, and quality of regulation flow controller 10, control gas Ar and SF
6flow, pass into gas approximately 5 minutes before processing;
Step 4: start radio-frequency power supply 4;
Step 5: starting ignition device 6, and regulate gradually radio-frequency power supply 4 to the power maximum, after forming, plasma torch 37 regulates gradually radio-frequency power supply 4 power to processing desired value;
Step 6: start numerical control motion platform 2, processed according to the numerical control code generated in flow chart shown in Fig. 5.
Be only below the preferred embodiment of the present invention, protection scope of the present invention also not only is confined to above-described embodiment, and all technical schemes belonged under thinking of the present invention all belong to protection scope of the present invention.It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, should be considered as protection scope of the present invention.
Claims (10)
1. a SiC optical material process equipment, it is characterized in that: comprise inductive coupling plasma generator, working gas supply source (8) and reacting gas supply source (9), in described reacting gas supply source (9), be equipped with after exciting by inductive coupling plasma generator and the reacting gas of SiC generation chemical reaction, described inductive coupling plasma generator comprises plasma torch pipe (34) and is sheathed on the outer induction coil (35) of plasma torch pipe (34), described working gas supply source (8) is connected with plasma torch pipe (34) with reacting gas supply source (9), one end of described induction coil (35) is connected with radio-frequency power supply (4), the other end of described induction coil (35) is by adjustable resistor R1 ground connection.
2. SiC optical material process equipment according to claim 1, it is characterized in that: be provided with shielded metal plate (36) between described induction coil (35) and plasma torch pipe (34) outer wall, described shielded metal plate (36) is by tunable capacitor C3 ground connection.
3. SiC optical material process equipment according to claim 1 and 2 is characterized in that: an end of described induction coil (35) is connected with radio-frequency power supply (4) by impedance matching box (5).
4. SiC optical material process equipment according to claim 1 and 2 is characterized in that: described reacting gas supply source (9) and working gas supply source (8) are provided with mass flow controller (10) with the connection line of plasma torch pipe (34).
5. SiC optical material process equipment according to claim 1 and 2 is characterized in that: described plasma torch pipe (34) is installed on one to have on the numerical control motion platform (2) of three-shaft linkage function at least.
6. SiC optical material process equipment according to claim 5, it is characterized in that: described numerical control motion platform (2) is arranged in a sealing Processing Room (1), and described sealing Processing Room (1) connects an exhaust gas processing device (11).
7. SiC optical material process equipment according to claim 1 and 2 is characterized in that: described working gas supply source (8) is provided with igniter (6) with the connection line of plasma torch pipe (34).
8. SiC optical material process equipment according to claim 1 and 2, it is characterized in that: described induction coil (35) connects a water cooling unit (7).
9. SiC optical material process equipment according to claim 1 and 2, it is characterized in that: described working gas supply source (8) is connected with outer tube with the middle pipe of plasma torch pipe (34), and described reacting gas supply source (9) is connected with the inner tube of plasma torch pipe (34); Perhaps, described working gas supply source (8) is connected with the outer tube of plasma torch pipe (34), and described reacting gas supply source (9) is connected with the middle pipe of plasma torch pipe (34).
10. SiC optical material process equipment according to claim 1 and 2, it is characterized in that: described reacting gas supply source (9) is SF
6gas cylinder or NF
3gas cylinder or CF
4gas cylinder.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310366741.7A CN103456610B (en) | 2013-08-21 | 2013-08-21 | A kind of SiC optical material process equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310366741.7A CN103456610B (en) | 2013-08-21 | 2013-08-21 | A kind of SiC optical material process equipment |
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| CN103456610A true CN103456610A (en) | 2013-12-18 |
| CN103456610B CN103456610B (en) | 2016-12-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104797072A (en) * | 2015-04-16 | 2015-07-22 | 大连交通大学 | Inductive coupling type radio frequency plasma source |
| CN108152358A (en) * | 2017-12-30 | 2018-06-12 | 杭州谱育科技发展有限公司 | Plasma-mass spectrometry system and its method of work |
| CN114619296A (en) * | 2022-03-24 | 2022-06-14 | 哈尔滨理工大学 | Silicon carbide atmospheric plasma polishing equipment and polishing method thereof |
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| CN1864921A (en) * | 2006-06-14 | 2006-11-22 | 哈尔滨工业大学 | Capacitive coupling radio frequency normal pressure plasma torch for machining ultra-smooth surface |
| CN101659568A (en) * | 2009-09-23 | 2010-03-03 | 哈尔滨工业大学 | Atmospheric plasma chemical processing method of WC and SiC optical molding molds |
| CN102027577A (en) * | 2008-05-15 | 2011-04-20 | 朗姆研究公司 | Selective inductive double patterning |
| CN201869431U (en) * | 2010-11-26 | 2011-06-15 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma processor |
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2013
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1864921A (en) * | 2006-06-14 | 2006-11-22 | 哈尔滨工业大学 | Capacitive coupling radio frequency normal pressure plasma torch for machining ultra-smooth surface |
| CN102027577A (en) * | 2008-05-15 | 2011-04-20 | 朗姆研究公司 | Selective inductive double patterning |
| CN101659568A (en) * | 2009-09-23 | 2010-03-03 | 哈尔滨工业大学 | Atmospheric plasma chemical processing method of WC and SiC optical molding molds |
| CN201869431U (en) * | 2010-11-26 | 2011-06-15 | 中微半导体设备(上海)有限公司 | Inductively coupled plasma processor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104797072A (en) * | 2015-04-16 | 2015-07-22 | 大连交通大学 | Inductive coupling type radio frequency plasma source |
| CN104797072B (en) * | 2015-04-16 | 2018-06-19 | 大连交通大学 | A kind of inductive coupling radio frequency plasma source |
| CN108152358A (en) * | 2017-12-30 | 2018-06-12 | 杭州谱育科技发展有限公司 | Plasma-mass spectrometry system and its method of work |
| CN108152358B (en) * | 2017-12-30 | 2024-02-02 | 杭州谱育科技发展有限公司 | Plasma-mass spectrometry system and working method thereof |
| CN114619296A (en) * | 2022-03-24 | 2022-06-14 | 哈尔滨理工大学 | Silicon carbide atmospheric plasma polishing equipment and polishing method thereof |
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| Publication number | Publication date |
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| CN103456610B (en) | 2016-12-28 |
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