CN101659568B - Atmospheric plasma chemical processing method of WC and SiC optical molding molds - Google Patents
Atmospheric plasma chemical processing method of WC and SiC optical molding molds Download PDFInfo
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- CN101659568B CN101659568B CN2009100729631A CN200910072963A CN101659568B CN 101659568 B CN101659568 B CN 101659568B CN 2009100729631 A CN2009100729631 A CN 2009100729631A CN 200910072963 A CN200910072963 A CN 200910072963A CN 101659568 B CN101659568 B CN 101659568B
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Abstract
The invention relates to an atmospheric plasma chemical processing method of WC and SiC optical molding molds, which belongs to the atmospheric plasma chemical processing methods of the optical molding molds. The atmospheric plasma chemical processing method can solve the problems that the grinding and polishing technology which is used for processing after processing and forming of the optical molding molds made of SiC and WC materials has the disadvantages of low processing efficiency, poor surface quality, damage of a sub-surface layer and short service life of the molds. The method comprises the steps of: introducing a mixture of plasma gas, reaction gas and oxygen into space between a cathode and an anode of a plasma generator, imposing radio frequency power signals on the cathode and the anode, producing the plasma discharge between the two electrodes, then placing the surface to be processed of the WC or SiC optical molding mold in a plasma jet region for carrying out chemical reaction and realizing the optical surface processing of the optical molding molds made of the SiC and WC materials. The method is used for carrying out the optical processing on the surfaces of the WC and SiC optical molding molds.
Description
Technical field
The present invention relates to the atmosphere plasma chemical process method of a kind of WC, SiC optics molding die.
Background technology
Compare with various glass lens, the optical mirror slip of glass material obtains application more and more widely owing to optical properties such as having high index of refraction, low thermal coefficient of expansion.It can be used for making various lens, prism and the optical filter that dual-use optical instrument uses; The fiber coupler that the manufacturing optic communication is used is used lens; Make the optically focused non-spherical lens that CD is used; Make the camera lens of digital camera, DV, mobile phone etc.; Various aspheric surfaces that the manufacturing view finder is used or even diffraction optical lens etc.; The annual demand to this type optical element in the whole world reaches more than one hundred million, adopts the technology of traditional grinding, polishing can't satisfy the production and processing of glass optical element so in enormous quantities.The optical glass lens compression molding technology is adopted in the processing of duplicating of high-precision optical element at present; It is to put into high-precision mould to softening glass; Under the condition of warming and pressurizing and anaerobic, disposable direct compression molding goes out to reach the optical element of instructions for use.1., the no defect in surface this making to molding die has proposed very high requirement, and it requires mold materials to possess following characteristic:, can grind to form pore-free, smooth optical mirror plane; 2., under high ambient conditions, have a very high oxidation resistent susceptibility, surface quality is stable, and structure do not change, surface figure accuracy and fineness remain unchanged; 3., do not react with glass, the phenomenon that can not stick together, demolding performace is good; 4., have very high hardness and intensity etc. under the hot conditions.In sum, SiC (carborundum), WC (tungsten carbide) material become the preferred material of making optical mould.
SiC, WC material are because hard crisp very difficult processing; For guaranteeing the precision of processing mold; Adopt the high-resolution ultraprecise computer numerical control (CNC) machining tool below high rigidity, the resolution ratio 0.01 μ m to process at present; Carry out the form accuracy of grinding with diamond-impregnated wheel after the machine-shaping, and then polishing is finish-machined to optical mirror plane to obtain to be expected; To of the processing of micro lens die mould with mould, require strictness more, need further to improve precision and alleviate the vestige of grinding.Because the grinding of adopting after WC, the machine-shaping of SiC optics the molding die at present and glossing working (machining) efficiency is low, surface quality is poor, roughness generally is difficult to be lower than 10nm, and the subsurface stratum damage in the ubiquity processing make reduce the service life of mould.
Summary of the invention
The objective of the invention is for after the optics molding die machine-shaping that solves present SiC, WC material; Adopt grinding and glossing to process the problem that working (machining) efficiency is low, surface quality is poor, the damage of meeting generation subsurface stratum make the reduction in service life of mould of existence, the atmosphere plasma chemical process method of a kind of WC, SiC optics molding die is provided.
The device of realization the inventive method is made up of plasma generator, radio-frequency power supply, impedance matching box, cooling water pump, plasma gas bottle, reacting gas bottle, first flow controller, second flow controller, gas mixer chamber, appendix, oxygen cylinder and the 3rd flow controller
Plasma generator comprises and being parallel to each other or the negative electrode and the anode of coaxial package; The outer surface of negative electrode and anode is coated with dielectric film respectively; The internal cavities of negative electrode and anode passes through an outlet of pipeline connection cooling water pump respectively; Negative electrode and corresponding respectively negative pole and the positive pole that is connected the radio-frequency power supply after the impedance matching box impedance matching of anode, the port of export of the appendix that is communicated with gas mixer chamber is positioned at negative electrode and the formed relatively zone of anode, and the plasma gas bottle is communicated with gas mixer chamber through second flow controller; The reacting gas bottle is communicated with gas mixer chamber through the first flow controller, and oxygen cylinder is communicated with gas mixer chamber through the 3rd flow controller; Processing steps is:
Step 1, open cooling water pump, make the negative electrode of plasma generator and the internal cavities of anode feed recirculated cooling water;
Step 2, preheating radio-frequency power supply, first flow controller, second flow controller and the 3rd flow controller, be 5-10 minute preheating time;
After step 3, the completion preheating; Open plasma gas bottle, reacting gas bottle and oxygen cylinder; Plasma gas bottle ionic medium body gas is He or Ar; Reacting gas is a fluoro-gas in the reacting gas bottle; Regulate the flow of plasma gas, reacting gas and oxygen respectively through first flow controller, second flow controller and the 3rd flow controller, the flow of plasma gas is 1 liter/minute～40 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 10～1: 1000;
Step 4, after being full of the mist of plasma gas, reacting gas and oxygen between the negative electrode of plasma generator and the anode; Start radio-frequency power supply; Progressively increase the power output of radio-frequency power supply, make power output reach 200W～800W, controlling reflection power simultaneously is zero; Continual and steady feeding mist in the process of radio-frequency power supply work; Making has a stable plasma gas region of discharge between negative electrode and the anode, be the feeding of the plasma gas of discharge condition along with mist, forms plasma jet in the exit of plasma generator;
The surface to be machined of WC or SiC optics molding die placed let it that chemical reaction takes place in the plasma jet zone, the die surface of formation has accurate Gauss's curve form, and cross section curve has following form:
Gauss's toroidal function of the mould that the unit interval processes is:
X in the formula: the vertical line of Mould Machining cross section minimum point and the intersection point of mould original plane are the abscissa of initial point;
Y: the vertical line of Mould Machining cross section minimum point and the intersection point of mould original plane are the ordinate of initial point;
A, c: Gauss's curved surface parameter;
Original shape according to mould reaches the removal amount that the shape need that finally will reach calculates the die surface material, relies on convolution theorem to resolve the residence time function, and the removal amount of die surface material satisfies following formula 1:
G in the formula (x, y): the residence time function;
U, v: be the amount of introducing when in mathematics, doing convolution;
Formula 1 is carried out Fourier transformation obtains formula 2:
H(ω
x，ω
y)＝F(ω
x，ω
y)·G(ω
x，ω
y)， 2
Formula 2 distortion are obtained formula 3:G (ω
x, ω
y)=H (ω
x, ω
y)/F (ω
x, ω
y), 3
Formula 3 is carried out inverse Fourier transform, obtain residence time function g (x, y);
By residence time function g (x; Y) confirm the time that WC or SiC optics molding die are resident in plasma jet zone, accomplish face type processing WC or SiC optics molding die by the requirement selection of thick processing and forming, precise forming processing, the finishing of ultraprecise face type or the processing of ultraphotic sliding surface type of WC or SiC optics molding die or staged repeating step three and step 4.
Advantage of the present invention is:
The present invention realizes the fine finishining to the surface of the SiC after the machine-shaping, WC optics molding die with the mode of chemical reaction; Can realize efficient removal,, can realize that the material of isotropic atom level is removed owing to be contactless chemical reaction to the die surface material; Form the optical surface of ultraprecise, ultra-smooth; Surface roughness is reached below the 1nm, and can not cause the damage of top layer and subsurface stratum, effectively improve the durability of mould; Adopt the present invention can realize that it can replace ultraprecise grinding machine and super-precision grinding casting machine tool simultaneously to the whole technical process of the SiC after the machine-shaping, WC optics molding die Surface Finishing, and realize high-precision processing mould through the control technological parameter; Processing method of the present invention is the pure chemistry process, does not have the effect of operating force, therefore, greatly reduces the requirement to the precision and the rigidity of mechanical system, has reduced system cost; The present invention's method through oxidation reaction under the effect of plasma gas realizes the fine finishining to the surface of SiC, WC optics molding die; The chemical reaction that feasible script need be able to carry out under the temperature conditions of thousands of degree just can be realized at normal temperatures; The course of reaction stable and controllable; And plasma produces under open atmospheric conditions, has avoided employing vacuum reaction container, greatly reduces cost.
Description of drawings
Fig. 1 is an overall structure sketch map of realizing the device of the inventive method; Fig. 2 is the cutaway view of A-A among Fig. 1; Fig. 3 is the structural representation of the plasma generator of employing in the embodiment eight; Fig. 4 is the cutaway view of B-B among Fig. 3; Fig. 5 is the structural representation of the plasma generator of employing in the embodiment nine; Fig. 6 is the section of outline figure that surfacing is removed in the Mould Machining process, and abscissa is represented the position of surface of the work, and ordinate is represented the processing removal degree of depth; Fig. 7 is the technical process flow process figure that the present invention is used for Mould Machining.
The specific embodiment
The specific embodiment one: this embodiment is described below in conjunction with Fig. 1, Fig. 6; The device of realizing the inventive method is made up of plasma generator 1, radio-frequency power supply 2, impedance matching box 3, cooling water pump 4, plasma gas bottle 5, reacting gas bottle 6, first flow controller 7, second flow controller 8, gas mixer chamber 9, appendix 10, oxygen cylinder 11 and the 3rd flow controller 12
Plasma generator 1 comprises and being parallel to each other or the negative electrode 1-1 and the anode 1-2 of coaxial package; The outer surface of negative electrode 1-1 and anode 1-2 is coated with dielectric film respectively; The internal cavities of negative electrode 1-1 and anode 1-2 passes through an outlet of pipeline connection cooling water pump 4 respectively; Negative electrode 1-1 and corresponding respectively negative pole and the positive pole that is connected the radio-frequency power supply 2 after impedance matching box 3 impedance matchings of anode 1-2; The port of export of the appendix 10 that is communicated with gas mixer chamber 9 is positioned at negative electrode 1-1 and the formed relatively zone of anode 1-2; Plasma gas bottle 5 is communicated with gas mixer chamber 9 through second flow controller 8, and reacting gas bottle 6 is communicated with gas mixer chamber 9 through first flow controller 7, and oxygen cylinder 11 is communicated with gas mixer chamber 9 through the 3rd flow controller 12; It is characterized in that processing steps is:
Step 1, open cooling water pump 4, make the negative electrode 1-1 of plasma generator 1 and the internal cavities of anode 1-2 feed recirculated cooling water;
Step 2, preheating radio-frequency power supply 2, first flow controller 7, second flow controller 8 and the 3rd flow controller 12, be 5-10 minute preheating time;
After step 3, the completion preheating; Open plasma gas bottle 5, reacting gas bottle 6 and oxygen cylinder 11; Plasma gas bottle 5 ionic medium body gases are He or Ar; Reacting gas is a fluoro-gas in the reacting gas bottle 6; Regulate the flow of plasma gas, reacting gas and oxygen respectively through first flow controller 7, second flow controller 8 and the 3rd flow controller 12, the flow of plasma gas is 1 liter/minute～40 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 10～1: 1000;
Step 4, after being full of the mist of plasma gas, reacting gas and oxygen between the negative electrode 1-1 of plasma generator 1 and the anode 1-2; Start radio-frequency power supply 2; Progressively increase the power output of radio-frequency power supply 2, make power output reach 200W～800W, controlling reflection power simultaneously is zero; Continual and steady feeding mist in the process of radio-frequency power supply 2 work; Making has a stable plasma gas region of discharge between negative electrode 1-1 and the anode 1-2, be the feeding of the plasma gas of discharge condition along with mist, forms plasma jet in the exit of plasma generator 1;
The surface to be machined of WC or SiC optics molding die placed let it that chemical reaction takes place in the plasma jet zone, the die surface of formation has accurate Gauss's curve form, and cross section curve has following form:
Gauss's toroidal function of the mould that the unit interval processes is:
X in the formula: the vertical line of Mould Machining cross section minimum point and the intersection point of mould original plane are the abscissa of initial point;
Y: the vertical line of Mould Machining cross section minimum point and the intersection point of mould original plane are the ordinate of initial point;
A, c: Gauss's curved surface parameter;
Original shape according to mould reaches the removal amount that the shape need that finally will reach calculates the die surface material, relies on convolution theorem to resolve the residence time function, and the removal amount of die surface material satisfies following formula 1:
G in the formula (x, y): the residence time function;
U, v: be the amount of introducing when in mathematics, doing convolution;
Formula 1 is carried out Fourier transformation obtains formula 2:
H(ω
x，ω
y)＝F(ω
x，ω
y)·G(ω
x，ω
y)， 2
Formula 2 distortion are obtained formula 3:G (ω
x, ω
y)=H (ω
x, ω
y)/F (ω
x, ω
y), 3
Formula 3 is carried out inverse Fourier transform, obtain residence time function g (x, y);
By residence time function g (x; Y) confirm the time that WC or SiC optics molding die are resident in plasma jet zone, accomplish face type processing WC or SiC optics molding die by the requirement selection of thick processing and forming, precise forming processing, the finishing of ultraprecise face type or the processing of ultraphotic sliding surface type of WC or SiC optics molding die or staged repeating step three and step 4.
Mould Machining is closed radio-frequency power supply 2, plasma gas bottle 5, reacting gas bottle 6, oxygen cylinder 11, first flow controller 7, second flow controller 8 and the 3rd flow controller 12 after accomplishing, and takes off the mould that has machined then.
Oxygen purity in this embodiment in the oxygen cylinder 11 is 99.9%, and reacting gas can be CF in the reacting gas bottle 6
4, NF
3Or SF
6Deng fluoro-gas; The parameter a that relates in Gauss's toroidal function, c can draw through the some machined parameters computing that experimental fit provides.
Operation principle:
The present invention is based on dielectric impedance Capacitance Coupled radio frequency plasma discharge principle, the electrode outer surface of plasma generator 1 is coated with dielectric film respectively, feeds suitable reacting gas therein, like CF
4, O
2Deng, excite the method that forms dielectric barrier discharge to obtain stable plasma jet through radio-frequency power supply, reacting gas is generated a large amount of excitation state fluorine atoms by plasma ionization.Shape, flow rate of reactive gas, jet through control jet come processing mold in the parameters such as residence time of die surface, have realized efficient, ultraprecise, ultra-smooth processing to the optics molding die of materials such as SiC, WC.
The removal of material generates SiF mainly based on excitation state fluorine atom in the plasma jet and surface of the work atom generation chemical reaction
4, WF
4Deng the material that is gaseous state at normal temperatures, and successfully remove from surface of the work.Because whole process is in open atmospheric environment, to carry out, the electronics in the plasma, charged ion are because gas density is very high, and its kinetic energy under electric field quickens will soon have been balanced out by mutual collision.Therefore, this process is an isotropic chemical reaction process, thereby has guaranteed the even removal of surface of the work material.
Ionization can take place in oxygen under the effect of plasma gas, produce the oxygen atom of excitation state, with reacting gas SF
6Be example, SF
6Under the effect of plasma gas, can be decomposed, produce the F of excitation state
*Atom, F
*Atom contacts with the surface of the work of SiC material with WC, produces following chemical reaction:
0
2+e-＞O
＊+O
＊+e
SF
6+e-＞F
*++e
WC+F
*+O
＊--＞WF
6↑+CO
2↑
SiC+F
*+O
＊--＞SiF
4↑+CO
2↑
Die face type generating principle:
Stable plasma jet contacts concurrent biochemical reaction with die surface, the surface of the work of formation has accurate Gauss's curve form, and cross section curve has
Form, mold sections is as shown in Figure 6.Utilize computer control plasma generator 1, make it stop different time, just can realize the processing of complex surface pattern at diverse location.This data block that is made up of the planar point time of staying is exactly resident function, the note do g (x, y).
The specific embodiment two: this embodiment is in the step 3 that with the difference of embodiment one selecting the flow of plasma gas is 20 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 10; In the step 4, make the power of radio-frequency power supply 2 reach 800W, WC or SiC optics molding die are carried out thick processing and forming.Other composition and annexation are identical with embodiment one.
The specific embodiment three: this embodiment is repeating step three with the difference of embodiment two, and selecting the flow of plasma gas is 20 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 20; In the step 4, make the power of radio-frequency power supply 2 reach 500W, WC or SiC optics molding die are carried out precise forming processing.Other composition and annexation are identical with embodiment two.
The specific embodiment four: this embodiment is repeating step three with the difference of embodiment three again, and selecting the flow of plasma gas is 10 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 40; In the step 4, make the power of radio-frequency power supply 2 reach 400W, WC or SiC optics molding die are carried out the finishing of ultraprecise face type.Other composition and annexation are identical with embodiment three.
The specific embodiment five: this embodiment is described below in conjunction with Fig. 7; This embodiment is repeating step three with the difference of embodiment four again; Selecting the flow of plasma gas is 5 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 100; In the step 4, make the power of radio-frequency power supply 2 reach 200W, the control plasma jet at the uniform velocity passes through with the speed of 2mm/s-6mm/s at die surface, and WC or SiC optics molding die are carried out the processing of ultraphotic sliding surface type.Other composition and annexation are identical with embodiment four.
Provide the technical process of a complete Mould Machining below: 1, that the die blank clamping is good; 2, thick processing and forming: according to the original shape of blank and final shape need; Calculate required material removal amount; Confirm that technological parameter is: 20 liters/minute of plasma gas flow amounts; The flow-rate ratio of reacting gas, oxygen and plasma gas is 1: 10; The power output of radio-frequency power supply 2 is got 800W, and confirms the residence time of plasma jet at die surface according to the residence time function, and machine tool numerical control system is according to residence time functions control lathe mold time and the completion processing resident in the plasma jet zone; 3, precise forming processing: according to the error between thick processing and forming face type and the net shape requirement; Calculate required material removal amount; Confirm that technological parameter is: 20 liters/minute of plasma gas flow amounts; The flow-rate ratio of reacting gas, oxygen and plasma gas is 1: 20; The power output of radio-frequency power supply 2 is got 500W, and confirms the residence time of plasma jet at die surface according to the residence time function, and machine tool numerical control system is according to residence time functions control lathe mold time and the completion processing resident in the plasma jet zone; 4, ultraprecise face type finishing: according to the error between precise forming machined surface type and the net shape requirement; Calculate required material removal amount; Confirm that technological parameter does; 10 liters/minute of the flows of plasma gas, the flow-rate ratio of reacting gas, oxygen and plasma gas are 1: 40, and the power output of radio-frequency power supply 2 is got 400W; And confirm the residence time of plasma jet at die surface according to the residence time function, machine tool numerical control system is according to residence time functions control lathe mold time resident in the plasma jet zone and accomplish processing; Detect surface precision then,, then repeat this stage process as not meeting the demands; 5, ultraphotic sliding surface type processing: the technological parameter in this stage is got: 5 liters/minute of the flows of plasma gas; The flow-rate ratio of reacting gas, oxygen and plasma gas is 1: 100; The power output of radio-frequency power supply 2 is got 200W, and plasma jet at the uniform velocity passes through at die surface; At last surface precision and surface quality are detected packing.
The specific embodiment six: this embodiment is that with the difference of embodiment five speed that plasma jet at the uniform velocity passes through at die surface is 4mm/s.Other composition and annexation are identical with embodiment five.
When plasma jet at the uniform velocity passed through die surface with the speed of 4mm/s, it is better relatively that speed is removed in processing, and the processing cross sectional shape meets Gauss's curved surface.
The specific embodiment seven: this embodiment is described below in conjunction with Fig. 1 and Fig. 2; This embodiment is that with embodiment one, two, three, four, five or six difference the negative electrode 1-1 of said plasma generator 1 and anode 1-2 are the cylinder of two coaxial packages; Inner core is as anode 1-2, and urceolus is as negative electrode 1-1.Other composition and annexation and embodiment one, two, three, four, five or six phase are together.
In this embodiment; The negative electrode 1-1 of plasma generator 1 and anode 1-2 adopt coaxial manner; Through between coaxial electrode, feeding the mixture of plasma gas, oxygen and reacting gas, and on coaxial electrode, apply rf power signal, plasma discharge promptly produces between coaxial electrode; Plasma is drawn coaxial electrode with the mobile quilt of plasma gas, thereby forms plasma jet.
The specific embodiment eight: this embodiment is described below in conjunction with Fig. 3 and Fig. 4; This embodiment is that with embodiment one, two, three, four, five or six difference said plasma generator 1 also comprises dielectric 1-3; Negative electrode 1-1 and the anode 1-2 placement that is parallel to each other; Form airtight space by dielectric 1-3 sealing between negative electrode 1-1 and the anode 1-2, it is the outlet of the circular hole of 1mm～5mm as plasma jet that the center of negative electrode 1-1 is processed with diameter.Other composition and annexation and embodiment one, two, three, four, five or six phase are together.
In this embodiment; Through between parallel pole, feeding the mixture of plasma gas, oxygen and reacting gas; And on parallel pole, apply rf power signal, and plasma discharge promptly produces between two electrodes, and plasma flows with plasma gas; Drawn region of discharge through the circular hole on the negative electrode 1-1, thereby formed plasma jet.
The specific embodiment nine: this embodiment is described below in conjunction with Fig. 5; This embodiment is that with embodiment one, two, three, four, five or six difference said plasma generator 1 also comprises insulating ceramics pipe 1-4; Negative electrode 1-1 and anode 1-2 parallel sleeve are connected on the outer surface of insulating ceramics pipe 1-4, and the distance between negative electrode 1-1 and the anode 1-2 is 5mm～15mm.Other composition and annexation and embodiment one, two, three, four, five or six phase are together.
In this embodiment, the negative electrode 1-1 of plasma generator 1 is two parallel ring electrodes with anode 1-2.The mixture of plasma gas and reacting gas is fed the arrival end of insulating ceramics pipe 1-4; Simultaneously on two electrodes, apply radiofrequency signal; In insulating ceramics pipe 1-4, produce the plasma that contains active particle, the plasma jet that it is formed for processing after the port of export ejection of insulating ceramics pipe 1-4.
Adopt three kinds of different plasma generators 1 in the embodiment seven, eight, nine, it is to combine discharge principle to select to use with the different of practical application condition.
The specific embodiment ten: the difference of this embodiment and embodiment nine is that the distance between said negative electrode 1-1 and the anode 1-2 is 10mm.Other composition and annexation are identical with embodiment nine.
The distance of two electrodes is 10mm in this embodiment, and this makes plasma discharge stable apart from meeting, through the surface roughness value of measuring institute processing work be improve maximum.
Claims (8)
1. the atmosphere plasma chemical process method of a WC, SiC optics molding die; The device of realization this method is made up of plasma generator (1), radio-frequency power supply (2), impedance matching box (3), cooling water pump (4), plasma gas bottle (5), reacting gas bottle (6), first flow controller (7), second flow controller (8), gas mixer chamber (9), appendix (10), oxygen cylinder (11) and the 3rd flow controller (12)
Plasma generator (1) comprises and being parallel to each other or the negative electrode (1-1) and the anode (1-2) of coaxial package; The outer surface of negative electrode (1-1) and anode (1-2) is coated with dielectric film respectively; The internal cavities of negative electrode (1-1) and anode (1-2) passes through an outlet of pipeline connection cooling water pump (4) respectively; Negative electrode (1-1) and corresponding respectively negative pole and the positive pole that is connected the radio-frequency power supply (2) after impedance matching box (3) impedance matching of anode (1-2); The port of export of the appendix (10) that is communicated with gas mixer chamber (9) is positioned at negative electrode (1-1) and the formed relatively zone of anode (1-2); Plasma gas bottle (5) is communicated with gas mixer chamber (9) through second flow controller (8), and reacting gas bottle (6) is communicated with gas mixer chamber (9) through first flow controller (7), and oxygen cylinder (11) is communicated with gas mixer chamber (9) through the 3rd flow controller (12); Processing steps is:
Step 1, open cooling water pump (4), make the negative electrode (1-1) of plasma generator (1) and the internal cavities of anode (1-2) feed recirculated cooling water;
Step 2, preheating radio-frequency power supply (2), first flow controller (7), second flow controller (8) and the 3rd flow controller (12), be 5-10 minute preheating time;
After step 3, the completion preheating; Open plasma gas bottle (5), reacting gas bottle (6) and oxygen cylinder (11); Plasma gas bottle (5) ionic medium body gas is He or Ar; Reacting gas is a fluoro-gas in the reacting gas bottle (6); Regulate the flow of plasma gas, reacting gas and oxygen respectively through first flow controller (7), second flow controller (8) and the 3rd flow controller (12), the flow of plasma gas is 1 liter/minute～40 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 10～1: 1000;
Step 4, after being full of the mist of plasma gas, reacting gas and oxygen between the negative electrode (1-1) of plasma generator (1) and the anode (1-2); Start radio-frequency power supply (2); Progressively increase the power output of radio-frequency power supply (2), make power output reach 200W～800W, controlling reflection power simultaneously is zero; Continual and steady feeding mist in the process of radio-frequency power supply (2) work; Making has a stable plasma gas region of discharge between negative electrode (1-1) and the anode (1-2), be the feeding of the plasma gas of discharge condition along with mist, forms plasma jet in the exit of plasma generator (1);
The surface to be machined of WC or SiC optics molding die placed let it that chemical reaction takes place in the plasma jet zone, the die surface of formation has accurate Gauss's curve form, and cross section curve has following form:
Gauss's toroidal function of the mould that the unit interval processes is:
X in the formula: with the vertical line of Mould Machining cross section lowest part and the intersection point of mould original plane is the abscissa of initial point;
Y: with the vertical line of Mould Machining cross section lowest part and the intersection point of mould original plane is the ordinate of initial point;
A, c: Gauss's curved surface parameter;
Original shape according to mould reaches the removal amount that the shape need that finally will reach calculates the die surface material, relies on convolution theorem to resolve the residence time function, and the removal amount of die surface material satisfies following formula 1:
G in the formula (x, y): the residence time function;
U, v: be the amount of introducing when in mathematics, doing convolution;
Formula 1 is carried out Fourier transformation obtains formula 2:
H(ω
x，ω
y)＝F(ω
x，ω
y)·G(ω
x，ω
y)，2
Formula 2 distortion are obtained formula 3:G (ω
x, ω
y)=H (ω
x, ω
y)/F (ω
x, ω
y), 3
Formula 3 is carried out inverse Fourier transform, obtain residence time function g (x, y);
By residence time function g (x; Y) confirm the time that WC or SiC optics molding die are resident in plasma jet zone, accomplish face type processing WC or SiC optics molding die by the requirement selection of thick processing and forming, precise forming processing, the finishing of ultraprecise face type or the processing of ultraphotic sliding surface type of WC or SiC optics molding die or staged repeating step three and step 4;
In the step 3, selecting the flow of plasma gas is 20 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 10; In the step 4, make the power of radio-frequency power supply (2) reach 800W, WC or SiC optics molding die are carried out thick processing and forming;
It is characterized in that: repeating step three, selecting the flow of plasma gas is 20 liters/minute, the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 20; In the step 4, make the power of radio-frequency power supply (2) reach 500W, WC or SiC optics molding die are carried out precise forming processing.
2. the atmosphere plasma chemical process method of WC according to claim 1, SiC optics molding die; It is characterized in that: repeating step three again; Selecting the flow of plasma gas is 10 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 40; In the step 4, make the power of radio-frequency power supply (2) reach 400W, WC or SiC optics molding die are carried out the finishing of ultraprecise face type.
3. the atmosphere plasma chemical process method of WC according to claim 2, SiC optics molding die; It is characterized in that: repeating step three again; Selecting the flow of plasma gas is 5 liters/minute, and the flow-rate ratio of reacting gas and oxygen and plasma gas is 1: 100; In the step 4, make the power of radio-frequency power supply (2) reach 200W, the control plasma jet at the uniform velocity passes through with the speed of 2mm/s-6mm/s at die surface, and WC or SiC optics molding die are carried out the processing of ultraphotic sliding surface type.
4. the atmosphere plasma chemical process method of WC according to claim 3, SiC optics molding die is characterized in that: the speed that plasma jet at the uniform velocity passes through at die surface is 4mm/s.
5. according to the atmosphere plasma chemical process method of claim 1,2,3 or 4 described WC, SiC optics molding die; It is characterized in that: the negative electrode (1-1) and the anode (1-2) of said plasma generator (1) are the cylinder of two coaxial packages; Inner core is as anode (1-2), and urceolus is as negative electrode (1-1).
6. according to the atmosphere plasma chemical process method of claim 1,2,3 or 4 described WC, SiC optics molding die; It is characterized in that: said plasma generator (1) also comprises dielectric (1-3); The placement that is parallel to each other of negative electrode (1-1) and anode (1-2); Form airtight space by dielectric (1-3) sealing between negative electrode (1-1) and the anode (1-2), it is the outlet of the circular hole of 1mm～5mm as plasma jet that the center of negative electrode (1-1) is processed with diameter.
7. according to the atmosphere plasma chemical process method of claim 1,2,3 or 4 described WC, SiC optics molding die; It is characterized in that: said plasma generator (1) also comprises insulating ceramics pipe (1-4); Negative electrode (1-1) and anode (1-2) parallel sleeve are connected on the outer surface of insulating ceramics pipe (1-4), and the distance between negative electrode (1-1) and the anode (1-2) is 5mm～15mm.
8. the atmosphere plasma chemical process method of WC according to claim 7, SiC optics molding die is characterized in that: the distance between said negative electrode (1-1) and the anode (1-2) is 10mm.
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