CN100462199C - Method of polishing normal pressure plasma - Google Patents
Method of polishing normal pressure plasma Download PDFInfo
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- CN100462199C CN100462199C CNB2007100720229A CN200710072022A CN100462199C CN 100462199 C CN100462199 C CN 100462199C CN B2007100720229 A CNB2007100720229 A CN B2007100720229A CN 200710072022 A CN200710072022 A CN 200710072022A CN 100462199 C CN100462199 C CN 100462199C
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Abstract
The normal pressure plasma polishing method is provided. The normal pressure plasma polishing method includes providing plasma gas and reaction gas in the volume ratio of 4-1000; and starting RF power source and increasing power gradually while controlling the reflected power to zero, with the initial effective power being 180-240 W, normal power being 400-1200 W, and maximum power being 1500 W. The present invention realizes super smooth surface machining by means of plasma chemical reaction at normal pressure, and has no need of vacuum chamber, low cost, wide application range, high machining efficiency, no surface damage and contamination, and high surface smoothness up to 1nm Ra.
Description
Technical field
The present invention relates to a kind of finishing method.
Background technology
The development of modern shortwave optics, high light optics, electronics and membrane science is very harsh to the requirement on surface, and its obvious characteristic is that surface roughness is less than 1nm Ra.This class surface is during as optical element, for obtaining high reflectance, low scattering properties in lay special stress on surface or utmost point low roughness value; During as function element,, for surface roughness, more pay attention to the character integrality on surface because of mostly being crystalline material.We are referred to as this two classes surface and are super-smooth surface.The root-mean-square value of super-smooth surface microfluctuation is the size of several atoms, and the key that therefore realizes super-smooth surface processing is to realize the removal of surfacing atom magnitude.The object of super-smooth surface processing is hard brittle materials such as crystal, glass and pottery, in general, most of hard brittle material can not be processed by the method for metalloid casting or plastic working, has only the employing ultraprecise processing method, just can obtain super-smooth surface preferably.Ultraprecise optical element processing many employings diamond super precision machining or various traditional grinding, polishing processing.The cutting of ultraprecise diamond itself can reach high machining accuracy, but be not suitable for processing hard brittle materials such as carborundum, optical glass, simultaneously, diamond super precision Machine Tool design complexity, cost an arm and a leg, requirement to aspects such as material, measurement, control, environment is all very harsh, and this has all limited being extensive use of of it.At present, the most frequently used processing method is to carry out traditional polishing processing on the basis of accurate grinding in the optical element processing, as the polishing of bath method, float glass process polishing etc.This type of processing method no doubt can obtain high surface roughness, but its material removing rate is too low, and promptly working (machining) efficiency is low excessively, requires to reach 2 as the surface roughness of laser gyro speculum
R
qAbout, its glossing is consuming time generally more than seven days, and, the processing that it is not suitable for the aspheric curve part, the correction of the piece surface form error that the lot of materials that is difficult to satisfy the demand is removed.Particularly when utmost point difficult to machine materials such as optical element employing carborundum, because the high rigidity of carbofrax material, when it is polished, when polish pressure is the polished glass pottery at least four times, this may cause catastrophic consequence when processing extremely thin light reflection mirror eyeglass.In addition, regardless of being cutting of ultraprecise diamond or various grinding, polishing processing, all there is the intrinsic defective of traditional mechanical contact processing inevitably.For example, contact machining all can cause the surface breakdown of material to some extent, forms micro-crack or causes the lattice disturbance of material, thereby have influence on the surface quality of speculum, reduces its surface breakdown threshold value.Sometimes, even can obtain the minute surface that surface roughness meets the demands, but the sub-surface damage under still can't avoiding covering on the top layer.All these all can finally influence the optical property of speculum.The another one problem that mechanical polishing technology is brought is the cleaning problem of polishing back super-smooth surface, the residue that is difficult to clean that the surface exists will directly have influence on quality of forming film or the live width of microelectronic component, integrated level and the reliability of follow-up nanoscale film.
Summary of the invention
The objective of the invention is weak point at mechanical type polishing method existence in large-scale light reflection mirror processing of routine, and the efficient that in the super-smooth surface processing of hard fragility difficult-to-machine material such as carborundum, exists low, be easy to generate problems such as top layer and subsurface stratum damage, surface clean difficulty, a kind of method of polishing normal pressure plasma is provided.The present invention utilizes the high density high energy active particle in the atmospheric plasma and atom generation physics, the chemical action of material surface, realize efficiently, the material of atom level removes, can not produce top layer or subsurface stratum damage again simultaneously at surface of the work, can effectively overcome the problems referred to above that exist in the super-smooth surface process, have mechanical processing tools incomparable advantage.And, adopt the plasma generation technique under the condition of normal pressure, avoid the vacuum system of the complexity that common plasma process device all requires, realized atmospheric pressure evenly discharge down more cheaply, can significantly reduce the investment of industrial quarters on vacuum equipment.Device of the present invention is by airtight work chamber 51, first linked system 52, plasma torch 53, workbench 56, second linked system 57, radio-frequency power supply 58, radio frequency adaptation 59, first flow controller 60, reacting gas bottle 61, plasma gas bottle 62, gas recycling and processing device 63, negative pressure pump 64, second flow controller 65, water inlet pipe 68 and outlet pipe 69 are formed, first linked system 52 is fixed on the common pedestal 54 that is positioned on airtight work chamber 51 bottom interior wall with second linked system 57, plasma torch 53 is installed on first linked system 52, and can on first linked system 52, realize rectilinear motion and gyration, first linked system 52 mainly act as the distance of adjusting 55 of plasma torch 53 and workpiece, and the axis direction that guarantees plasma torch 53 overlaps with the normal direction of workpiece 55 surfaces to be machined, workbench 56 is installed on second linked system 57 and can realizes rectilinear motion and gyration on second linked system 57, second linked system 57 mainly act as the location of realizing workpiece 55 by rectilinear motion and gyration, the specific relative movement orbit that first linked system 52 and second linked system, 57 cooperation realization plasma torch 53 and workpiece are 55, finish the plane, sphere, aspheric surface and more complex-curved polishing processing, radio-frequency power supply 58 is electrically connected with radio frequency adaptation 59, reacting gas bottle 61 is connected by the inlet of pipeline with second flow controller 65, the outlet of second flow controller 65 is connected with plasma torch 53 via the pipeline interface 66 on the airtight work chamber 51 by pipeline, plasma gas bottle 62 is connected by the inlet of pipeline with first flow controller 60, the outlet of first flow controller 60 is connected with plasma torch 53 via the pipeline interface 66 on the airtight work chamber 51 by pipeline, water inlet pipe 68 is connected with plasma torch 53 via the pipeline interface 66 on the airtight work chamber 51 respectively with outlet pipe 69, the inlet of gas recycling and processing device 63 is connected with the outlet of negative pressure pump 64, and the inlet of negative pressure pump 64 is connected with the gas outlet 67 of airtight work chamber 51 by pipeline; The step of polishing is: one, open cooling water pump, make water inlet pipe 68 and outlet pipe 69 water flowings; Two, preheating radio-frequency power supply 58, first flow controller 60 and second flow controller 65, be 5～20 minutes preheating time; Three, open gas recycling and processing device 63 (negative pressure pump 64 is optional accessory, can connect and open when needing negative pressure); Four, open reacting gas bottle 61 and plasma gas bottle 62, plasma gas is He or Ar, and reacting gas is CF
4, NF
3Or SF
6, the volume ratio of plasma gas and reacting gas is 4:1～1000:1; The range of flow of plasma gas be 5～25SLM liter/minute; Five, start radio-frequency power supply 58, progressively apply power, the control reflection power is zero, and initial effective power (promptly beginning to produce the power of plasma) is approximately 200 watts, and normal power is 400～1200 watts, and power is the highest to add to 1500 watts; Six, the plasma flame of maintenance plasma torch 53 is stable, implements the operation of computer regulating machining locus; Seven, after polishing is finished, close radio-frequency power supply 58, off-response gas bottle 61 and plasma gas bottle 62, close gas recycling and processing device 63 and negative pressure pump 64 (if any being equipped with), close cooling water pump; Eight, take out polishing workpiece.The invention has the beneficial effects as follows: can under condition of normal pressure, realize efficient, the high-precision polishing processing of super-smooth surface, avoid in the conventional mechanical type polishing method problem, simultaneously the problem includes: problems such as top layer or subsurface stratum damages; Simultaneously, can under an atmospheric pressure, produce the uniform low temperature plasma of large tracts of land, not need vacuum chamber, can reduce equipment cost greatly and enlarge its scope of application; Atmospheric plasma has very high plasma density, and its electron density is the highest can to reach 1 * 10
14-1 * 10
15Cm
-3Between, than the high 4-6 of a vacuum plasma order of magnitude.Under the normal condition, active particle density is than high 1 to 2 order of magnitude of plasma density in the plasma, therefore adopt atmospheric plasma can guarantee very high chemical reaction velocity, working (machining) efficiency is 10 times of traditional finishing method, and the surface roughness of polishing workpiece is less than 1nm Ra.
Description of drawings
Fig. 1 is the overall structure schematic diagram of the burnishing device that adopts of method of polishing normal pressure plasma of the present invention, and Fig. 2 is the overall structure schematic diagram of plasma torch 53.
The specific embodiment
The specific embodiment one: (referring to Fig. 1, Fig. 2) device of present embodiment is by airtight work chamber 51, first linked system 52, plasma torch 53, workbench 56, second linked system 57, radio-frequency power supply 58, radio frequency adaptation 59, first flow controller 60, reacting gas bottle 61, plasma gas bottle 62, gas recycling and processing device 63, negative pressure pump 64 (optional accessory), second flow controller 65, water inlet pipe 68 and outlet pipe 69 are formed, first linked system 52 is fixed on the common pedestal 54 that is positioned on airtight work chamber 51 bottom interior wall with second linked system 57, plasma torch 53 is installed on first linked system 52 and can realizes rectilinear motion and gyration on first linked system 52, first linked system 52 mainly act as the distance of adjusting 55 of plasma torch 53 and workpiece, the axis direction that guarantees plasma torch 53 overlaps with the normal direction of workpiece 55 surfaces to be machined, workbench 56 is arranged on second linked system 57 and can realizes rectilinear motion and gyration on second linked system 57, second linked system 57 mainly act as the location of realizing workpiece 55 by rectilinear motion and gyration, the specific relative movement orbit that first linked system 52 and second linked system, 57 cooperation realization plasma torch 53 and workpiece are 55, finish the plane, sphere, aspheric surface and more complex-curved polishing processing, radio-frequency power supply 58 is electrically connected with radio frequency adaptation 59, reacting gas bottle 61 is connected by the inlet of pipeline with second flow controller 65, the outlet of second flow controller 65 is connected with plasma torch 53 via the pipeline interface 66 on the airtight work chamber 51 by pipeline, plasma gas bottle 62 is connected by the inlet of pipeline with first flow controller 60, the outlet of first flow controller 60 is connected with plasma torch 53 via the pipeline interface 66 on the airtight work chamber 51 by pipeline, water inlet pipe 68 is connected with plasma torch 53 via the pipeline interface 66 on the airtight work chamber 51 respectively with outlet pipe 69, the inlet of gas recycling and processing device 63 is connected with the outlet of negative pressure pump 64, and the inlet of negative pressure pump 64 is connected with the gas outlet 67 of airtight work chamber 51 by pipeline; The step of polishing is: one, open cooling water pump, make water inlet pipe 68 and outlet pipe 69 water flowings; Two, preheating radio-frequency power supply 58, first flow controller 60 and second flow controller 65, be 5～20 minutes preheating time; Three, open gas recycling and processing device 63 and negative pressure pump 64 (, then not connecting negative pressure pump) as not needing negative pressure; Four, open reacting gas bottle 61 and plasma gas bottle 62, plasma gas is He or Ar, and reacting gas is CF
4, NF
3Or SF
6, the volume ratio of plasma gas and reacting gas is 4:1～1000:1, the range of flow of plasma gas be 5～25SLM liter/minute; Five, start radio-frequency power supply 58, progressively apply power, the control reflection power is zero, and initial effective power (beginning to produce the power of plasma) is 185 watts, and normal power is 400～1200 watts, and peak power can add to 1500 watts; Six, keep the stable of plasma torch 53 plasma flames, computer regulating is finished the machining locus operation; Seven, after polishing is finished, close radio-frequency power supply 58, off-response gas bottle 61 and plasma gas bottle 62, close gas recycling and processing device 63 and negative pressure pump 64 (as being equipped with), close cooling water pump; Eight, take out polishing workpiece.Present embodiment is applicable to the plasma polishing processing of super-smooth surface, and critical piece comprises: the airtight work chamber 51 that, is used to put plasma torch 53 (capacitance coupling type normal-pressure radio-frequency plasma source) and workpiece 55; Two, plasma generating system comprises: plasma torch 53, radio-frequency power supply 58 and radio frequency adaptation 59.Finish the processing of the ultraprecise plasma polishing of surface of the work by operate plasma torch 53; Three, multi-shaft interlocked ultra precise workbench body and kinetic control system thereof, it can realize the gyration of one or more frees degree and the rectilinear motion of one or more frees degree, this workbench 56 works in the airtight work chamber 51.Workbench 56 is realized the straight reciprocating motion of one or more frees degree and rotatablely moving of one or more frees degree, and plasma torch 53 is realized the straight reciprocating motion of one or more frees degree and rotatablely moving of one or more frees degree.The straight-line motion mechanism of this linked system adopts servomotor directly to drag ball-screw, and realize gyration and straight-line conversion by the screw pair of ball-screw, and by grating chi realization position feedback, thereby constitute full cut-off ring line motion control system.The gyration of this linked system drags the turbine and worm pair by servomotor and realizes, and by the angular displacement of photoelectric code disk feedback, thereby realize full cut-off ring angle Position Control.Four, reacting gas feedway, this device is responsible for the reacting gas that plasma producing apparatus provides proper formulation.Therefore, the ratio of all gases can be accurately adjusted, and the high stability of reacting gas flow velocity can be guaranteed.This is the important prerequisite that generates stable plasma discharge.This part mainly comprises gas bomb, pressure-reducing valve, mass flowmenter.Gases at high pressure are accurately controlled the gas flow that flows into plasma torch 53 by mass flowmenter after the pressure-reducing valve decompression.Five, the gas recycling and processing device 63.Chemical principle according to normal pressure, low temperature plasma polishing may include in the elaboration products and poison gas, must carry out harmless treatment.
The specific embodiment two: the plasma torch 53 of (referring to Fig. 2) present embodiment is by anode water-cooled conduit 1, inlet suction port 3, negative electrode water-cooled joint 1, anode 5, negative electrode 6, negative electrode water-cooled joint 28, overcoat 9, ceramic nut 10, connector 11, attaching nut 12 forms, negative electrode 6 is fixedlyed connected with overcoat 9, form water-cooled annular space 13 between the inwall of the outer wall of negative electrode 6 and overcoat 9, negative electrode water-cooled joint 1 is fixed on the outer wall of overcoat 9 one sides and with water-cooled annular space 13 and is connected, negative electrode water-cooled joint 28 is fixed on the outer wall of overcoat 9 opposite sides and with water-cooled annular space 13 and is connected, the right-hand member of ceramic nut 10 is fixedlyed connected with the left end of negative electrode 6, the right-hand member of connector 11 is fixedlyed connected with the left end of ceramic nut 10, the left end of anode 5 is fixed in connector 11 and the ceramic nut 10 by the shoulder in the middle of screw thread and the anode 5, the right-hand member of anode 5 is arranged in the negative electrode 6, form working chamber 15 between the inwall of the outer wall of anode 5 and negative electrode 6, the right-hand member of negative electrode 6 is provided with outlet 7, inlet suction port 3 is fixed on the outer wall of ceramic nut 10 and is connected with inlet channel 14 in the ceramic nut 10, inlet channel 14 in the ceramic nut 10 is connected with the working chamber 15 between anode 5 and the negative electrode 6, anode water-cooled conduit 1 is arranged in the inner chamber 16 of anode 5, attaching nut 12 is fixed in the left port of anode 5, the left end of anode water-cooled conduit 1 is fixed on attaching nut 12 center and communicates with outside feed pipe, be provided with cooling-water duct 2 in the connector 11, the inner end of cooling-water duct 2 is connected with the inner chamber 16 of anode 5, and the outer end of cooling-water duct 2 communicates with extraneous return pipe.The matrix material of negative electrode 6 and anode 5 is aluminium, and oxidation has one deck Al on the outer surface of anode 5
2O
3Film.
The specific embodiment three: in the step 4 of present embodiment, the volume ratio of plasma gas and reacting gas is 5:1～950:1.Other method and step are identical with the specific embodiment one.
The specific embodiment four: in the step 4 of present embodiment, the volume ratio of plasma gas and reacting gas is 50:1～550:1.Other method and step are identical with the specific embodiment one.
The specific embodiment five: in the step 4 of present embodiment, the volume ratio of plasma gas and reacting gas is 400:1.Other method and step are identical with the specific embodiment one.
The specific embodiment six: in the step 5 of present embodiment, initial effective power is 190～220 watts, and normal power is 400～1200 watts.Other method and step are identical with the specific embodiment one.
The specific embodiment seven: in the step 5 of present embodiment, initial effective power is 195～210 watts, and normal power is 400～1200 watts.Other method and step are identical with the specific embodiment one.
The specific embodiment eight: in the step 5 of present embodiment, initial effective power is 200 watts, and normal power is 600 watts.Other method and step are identical with the specific embodiment one.
Operation principle: under normal pressure, plasma gas (as helium, argon gas etc.) is ionized under the effect of rf electric field, forms nonthermal plasma, and under the effect of plasma, reacting gas is (as CF
4, NF
3, SF
6Deng) dissociated, form a large amount of highly active excited state particles.In polishing process, active particle will be by the optical element surface atom adsorbed and reaction with it, thereby the material of realizing atom level remove, can not produce top layer or subsurface stratum damage again simultaneously at surface of the work.To adopt CF
4As reacting gas, processing SiC is an example, and relevant chemical equation is as follows:
Or employing CF
4As reacting gas, the relevant chemical equation of processing Si is as follows:
Utilize the high density and activity excitation state F in the atmospheric plasma that radio frequency discharge produces
*Atom, with surface of the work SiC atomic layer generation chemical reaction, the material that reaches atom level is removed, and generates the SiF that reclaims easily
4And CO
2Gas.Characteristics: (1) this capacitive coupling radio frequency normal pressure plasma torch is applicable to the plasma polishing processing of super-smooth surface, adopted coaxial electrode torch body structure based on the Capacitance Coupled principle, interior (anode) outer (negative electrode) electrode all adopts water-cooled, wherein, interior electrode connects radio-frequency power supply, external electrode ground connection.Adopt insulating materials good isolation structure between the internal and external electrode.The plasma torch of this structure has overcome the rotation electrode plasma source in the CVM method and the shortcoming of the induction coupled plasma torch in the RAP method, and plasma shape is easy to control, and is non-maintaining.The gas input adopts flowmeter accurately to control, and multipath gas can be imported simultaneously.(2) working chamber 15 is a plasma generation area, exports to plasma and draws the zone.By optimizing the structure of plasma torch, can obtain the plasma profile of stable and controllable.Adopt truncated cone, the straight degree of lip-rounding or flaring outlet shape, utilize air current flow to drive plasma motion, blow out, obtain the plasma flame of given shape by outlet.(3) anode water-cooled conduit 1 and cooling-water duct 2 are the entrance and exit of anode water cooling system, and cold water enters the cavity 16 of anode interior from anode water-cooled conduit 1, are flowed out by cooling-water duct 2, take away heat.Negative electrode water-cooled joint 1 and negative electrode water-cooled joint 28 are the entrance and exit of negative electrode water-cooling system, and cold water is taken away heat by wherein flowing into flatly in the outer cavity 13 of negative electrode, is flowed out by other a bite.The capacitance coupling plasma torch adopts the recirculated water cooling structure, has guaranteed the stability of atmospheric plasma in process.Above water cooling plant also can replace with oil cooling or gas cooled.(4) matrix material of negative electrode anode is aluminium, installs on the location at it, the nut that has adopted processable ceramic to make, and it is good insulating not only, and high pressure resistant.Simultaneously, the method by differential arc oxidation also is formed with one deck Al at the outer surface of anode 5
2O
3Film has suppressed interelectrode arcing phenomenon effectively, has greatly improved the overall performance of plasma torch.(5) adopt radio-frequency power supply and supporting radio frequency adaptation.The structures shape of this capacitance coupling type normal pressure plasma torch by radio-frequency power supply discharge generation thermal nonequilibrium atmospheric plasma, be preferred plan thereby inspire the high energy active particle.By radio-frequency power supply discharge generation thermal nonequilibrium atmospheric plasma (Non-thermalatmospheric pressure plasma).At Si, the processing of materials such as SiC, reacting gas is selected according to the principle of chemical reaction thermodynamics.When guaranteeing that chemical reaction can carry out, reaction product should be easy to discharge, and can not cause new pollution to finished surface.In this example, working gas mainly comprises He and a spot of reacting gas, as CF
4Deng.Reacting gas composition and ratio, active particle density and energy all have considerable influence in the parameter article on plasma bodies such as reacting gas flow velocity, the minor variations of reacting gas proportioning all can article on plasma body discharge condition produce appreciable impact, even may cause the termination of plasma discharge process, therefore should accurately control.Working gas enters two interelectrode cavitys (working chamber 15) by inlet suction port 3.Realize the accurate proportioning of each gas componant of participation reaction by flow controller in working order down.Under the effect of plasma, these reacting gas form a large amount of highly active excited state particles, and blow to surface of the work by outlet.Material removal amount with resident between, a plurality of technological parameters such as power, gas mixing ratio are relevant, at different processing requests, can formulate different trajectory planning schemes, realize predetermined machining locus by computer programming.In polishing process, active particle will be by the optical element surface atom adsorbed and reaction with it, product is drained with the atmospheric plasma that constantly flows, thus the material of realizing atom level is removed.
Claims (5)
1. method of polishing normal pressure plasma, the device of method of polishing normal pressure plasma is by airtight work chamber (51), first linked system (52), plasma torch (53), workbench (56), second linked system (57), radio-frequency power supply (58), radio frequency adaptation (59), first flow controller (60), reacting gas bottle (61), plasma gas bottle (62), gas recycling and processing device (63), negative pressure pump (64), second flow controller (65), water inlet pipe (68) and outlet pipe (69) are formed, first linked system (52) is fixed on the common pedestal (54) that is positioned on airtight work chamber (51) bottom interior wall with second linked system (57), first linked system (52) that is installed in plasma torch (53) goes up and goes up realization rectilinear motion and gyration in first linked system (52), second linked system (57) that is arranged on workbench (56) goes up and goes up realization rectilinear motion and gyration in second linked system (57), radio-frequency power supply (58) is electrically connected with radio frequency adaptation (59), reacting gas bottle (61) is connected by the inlet of pipeline with second flow controller (65), the outlet of second flow controller (65) is connected with plasma torch (53) via the pipeline interface (66) on the airtight work chamber (51) by pipeline, plasma gas bottle (62) is connected by the inlet of pipeline with first flow controller (60), the outlet of first flow controller (60) is connected with plasma torch (53) via the pipeline interface (66) on the airtight work chamber (51) by pipeline, water inlet pipe (68) is connected with plasma torch (53) via the pipeline interface (66) on the airtight work chamber (51) respectively with outlet pipe (69), the inlet of gas recycling and processing device (63) is connected with the outlet of negative pressure pump (64), and the inlet of negative pressure pump (64) is connected with the gas outlet (67) of airtight work chamber (51) by pipeline; It is characterized in that the step of polishing is: one, open cooling water pump, make water inlet pipe (68) and outlet pipe (69) water flowing; Two, preheating radio-frequency power supply (58), first flow controller (60) and second flow controller (65), be 5～20 minutes preheating time; Three, open gas recycling and processing device (63); Four, open reacting gas bottle (61) and plasma gas bottle (62), plasma gas is He or Ar, and reacting gas is CF
4, NF
3Or SF
6, the volume ratio of plasma gas and reacting gas is 4:1～1000:1, the range of flow of plasma gas be 5～25SLM liter/minute; Five, start radio-frequency power supply (58), progressively apply power, the control reflection power is zero, and initial effective power is 185 watts, and normal power is 400～1200 watts; Six, keep the stable of plasma torch (53) plasma flame, computer regulating is finished the machining locus operation; Seven, after polishing is finished, close radio-frequency power supply (58), off-response gas bottle (61) and plasma gas bottle (62), close gas recycling and processing device (63), close cooling water pump; Eight, take out polishing workpiece.
2. method of polishing normal pressure plasma according to claim 1, it is characterized in that plasma torch (53) is by anode water-cooled conduit (1), inlet suction port (3), negative electrode water-cooled joint one (4), anode (5), negative electrode (6), negative electrode water-cooled joint two (8), overcoat (9), ceramic nut (10), connector (11) and attaching nut (12) form, it is characterized in that negative electrode (6) fixedlys connected with overcoat (9), form water-cooled annular space (13) between the inwall of the outer wall of negative electrode (6) and overcoat (9), negative electrode water-cooled joint one (4) is fixed on the outer wall of overcoat (9) one sides and with water-cooled annular space (13) and is connected, negative electrode water-cooled joint two (8) is fixed on the outer wall of overcoat (9) opposite side and with water-cooled annular space (13) and is connected, the right-hand member of ceramic nut (10) is fixedlyed connected with the left end of negative electrode (6), the right-hand member of connector (11) is fixedlyed connected with the left end of ceramic nut (10), the left end of anode (5) is fixed in connector (11) and the ceramic nut (10) by the shoulder in the middle of screw thread and the anode (5), the right-hand member of anode (5) is arranged in the negative electrode (6), form working chamber (15) between the inwall of the outer wall of anode (5) and negative electrode (6), the right-hand member of negative electrode (6) is provided with outlet (7), inlet suction port (3) is fixed on the outer wall of ceramic nut (10) and is connected with inlet channel (14) in the ceramic nut (10), inlet channel (14) in the ceramic nut (10) is connected with the working chamber (15) between anode (5) and the negative electrode (6), anode water-cooled conduit (1) is arranged in the inner chamber (16) of anode (5), attaching nut (12) is fixed in the left port of anode (5), the left end of anode water-cooled conduit (1) is fixed on attaching nut's (12) center and communicates with extraneous water inlet pipe, be provided with cooling-water duct (2) in the connector (11), the inner end of cooling-water duct (2) is connected with the inner chamber (16) of anode (5), and the outer end of cooling-water duct (2) communicates with extraneous outlet pipe.
3. method of polishing normal pressure plasma according to claim 2 is characterized in that in the step 4, and the volume ratio of plasma gas and reacting gas is 5:1～950:1.
4. method of polishing normal pressure plasma according to claim 2 is characterized in that in the step 4, and the volume ratio of plasma gas and reacting gas is 50:1～550:1.
5. method of polishing normal pressure plasma according to claim 2 is characterized in that in the step 4, and the volume ratio of plasma gas and reacting gas is 400:1.
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