CN106115711B - A kind of polycrystalline silicon reducing furnace - Google Patents
A kind of polycrystalline silicon reducing furnace Download PDFInfo
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- CN106115711B CN106115711B CN201610463754.XA CN201610463754A CN106115711B CN 106115711 B CN106115711 B CN 106115711B CN 201610463754 A CN201610463754 A CN 201610463754A CN 106115711 B CN106115711 B CN 106115711B
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- chassis
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Abstract
A kind of polycrystalline silicon reducing furnace, including chassis and furnace body, the furnace body is the top on chassis, and furnace body is cylindric plus spherical top reaction chamber；Chassis is discoid, and raw material gas inlet and offgas outlet are distributed on chassis, uniformly distributed 30 50 pairs of electrodes on chassis, half electrode homogeneous vertical on chassis is installed, the other half electrode is interspersed for vertically-mounted electrode on lifting electrode, with chassis, lifts the bottom end of electrode far from 3 10cm of chassis；The upper end position of electrode is lifted with cylindric concordant with spherical top intersection, raw material gas inlet is mounted on by the air inlet pipe of a height of 3 10cm on chassis.
Description
First, technical field
The present invention relates to a kind of structures of polycrystalline silicon reducing furnace.
2nd, background technology
The technique of production of polysilicon has in the world at present：Improved Siemens, silane thermal decomposition process and fluidized bed process.Wherein improvement west
Men Zifa is the main technique of current production of polysilicon, produces the 80% of the Liang Zhan worlds production of polysilicon total amount of polysilicon
[9,11], the most important equipment of the process is polycrystalline silicon reducing furnace, and reduction power consumption is more than that entire polysilicon production process is always electric
Consumption 60%.Therefore, in-depth study is carried out to the fluidal texture in reduction furnace, and then the novel reducing furnace for developing low energy consumption has
Important science and practical value.
In traditional polycrystalline-silicon reducing furnace structure, the import of unstripped gas and offgas outlet are distributed on chassis, this knot
In addition structure requirement setting nozzle of air supply must control induction air flow ratio to reach sufficiently large could realize and reduction furnace top area is mixed
The shortcomings that update of gas, the structure is maximum is to be easy to cause reduction furnace top area to generate dead zone, since top gas cannot
Effectively update, therefore top area can generate local high temperature zone, this local high temperature zone can lead to the generation of silica flour, and silica flour is very
Reduction furnace internal face is readily adhered to, reduces reduction furnace inner surface heat radiant reflectance, eventually leading to reduction power consumption increases.
Existing improved novel reducing furnace offgas outlet is distributed on top, and it is high to solve local temperature in traditional reduction furnace
Problem avoids and silica flour is generated in reduction furnace, tentatively solves the problems, such as that reduction power consumption is excessively high.But offgas outlet is distributed on top
Structure reduction control on need.
3 circumference of improved chassis of reducing furnace electrode point are arranged, and the silicon rod on each circumference is all in arranged in regular hexagon shape, from
There are 3 pairs, 3 pairs, 6 pairs of equally distributed electrodes in center successively outward；It is maximum between the every two neighboring electrode in novel reducing furnace chassis
Spacing is 220mm；A regular hexagon is all formed per adjacent three pairs of silicon rods, the central distribution of each regular hexagon an air inlet
Mouthful, air inlet sum is 13.
In novel polysilicon reduction furnace, gaseous mixture is essentially all to be flowed up along silicon rod surface, this is because more
Close to silicon rod surface, temperature is higher, and density is lower；In addition there is also temperature difference, this temperature on reduction furnace axial direction
But also reactor generates density contrast in the axial direction, polycrystalline silicon reducing furnace promotees degree difference in the density indexing difference of varying cross-section plane
Gaseous mixture is made to be flowed from chassis air inlet mouth to the flat push type of top plate gas outlet.
However the raw material gas inlet and offgas outlet of conventional multi-crystalline silicon reduction furnace are distributed on chassis, this structural requirement setting
In addition nozzle of air supply must control induction air flow ratio to reach the sufficiently large update that could be realized to reduction furnace top area gaseous mixture,
Therefore the flowing in reduction furnace is substantially complete mixing flow, is the flowing of forced convertion, axially and radially the density contrast on direction
Gaseous mixture is hindered instead to flow to the gas outlet on chassis.So that the Density Distribution newer type reduction furnace in traditional reduction furnace is more equal
It is even.Traditional reduction furnace into outlet mode is also easy to that raw material is caused to make short circuit leave with rage so that unstripped gas it is not sufficiently reactive just directly from
Gas outlet is discharged, and is caused the waste of unstripped gas, is influenced the deposition rate of polysilicon.New and old reduction furnace, novel reducing furnace
Temperature Distribution on the axial direction of reduction furnace there are more obvious temperature difference, this is because in novel polysilicon reduction furnace
Flow field is flat push type flowing, and this type of flow can control each position in reduction furnace by changing the operating condition of reduction furnace
The temperature put, controllable Temperature Distribution can control the generation of silica flour in reduction furnace, avoid silica flour because being attached to reduction furnace
The burnishing surface of reduction furnace inner wall is destroyed on internal face, the burnishing surface of reduction furnace internal face can be preserved for a long time, increase inner wall
In face of the reflection of high temperature silicon rod heat radiation, so as to reduce the reduction power consumption of reduction furnace；And the flow field in traditional reduction furnace is complete
Mixed flow, Temperature Distribution is more uniform, and this type of flow cannot efficiently control the temperature in reduction furnace, therefore in reduction furnace
Localized high temperature regions are easily generated, this localized high temperature regions can generate silica flour, and silica flour is readily adhered to reduction furnace inner wall
The surface in face, causes the generation of reduction furnace internal face localized hyperthermia point, and this localized hyperthermia's point can cause the attached of more silica flours again
It, finally destroys the burnishing surface of reduction furnace internal face, so as to increase the reduction power consumption of reduction furnace.
3rd, invention content
The present invention seeks to propose a kind of structure of polycrystalline silicon reducing furnace.Using the lifting electrode of cross-distribution, improve
The uniformity that material is distributed in stove is easy to control the temperature of each position in reduction furnace, reduces power consumption and ensures product quality.
The technical scheme is that a kind of polycrystalline silicon reducing furnace, it is characterized in that including：Chassis and furnace body, the furnace body
For the top on chassis, furnace body is cylindric plus spherical top reaction chamber；Chassis is discoid, raw material gas inlet and offgas outlet
It is distributed on chassis, it is characterized in that uniformly distributed 30-50 to electrode, install by half electrode homogeneous vertical on chassis on chassis,
The other half electrode is interspersed for vertically-mounted electrode on lifting electrode, with chassis, lifts the bottom end of electrode far from chassis 3-10cm；
The upper end position of electrode is lifted with cylindric concordant with spherical top intersection, the air inlet pipe that raw material gas inlet passes through a height of 3-10cm
On chassis.
Raw material gas inlet and offgas outlet are distributed on the circumference of the different radii on chassis, the cloth on the circumference of a radius
When putting raw material gas inlet, offgas outlet is arranged on the circumference of adjacent radius.
Furnace body is cylindric to clamp the stake body of the concordant lifting electrode of titanium gasket extraction with spherical top intersection, and titanium gasket is drawn
Titanium framework body is angle titanium-type material.
Advantageous effect, although it is old-fashioned reduction furnace structure that the present invention, which seems, the installation of lifting electrode significantly improves
The uniformity that material is distributed in stove, is easily easy to control the temperature of each position in reduction furnace by the application of unstripped gas etc., can
The Temperature Distribution of control can control the generation of silica flour in reduction furnace, and it is broken because on the internal face for being attached to reduction furnace due to avoid silica flour
The burnishing surface of bad reduction furnace inner wall can preserve the burnishing surface of reduction furnace internal face for a long time, increase internal face (it is be silver-plated,
Especially hemispheric dome is conducive to growth and the uniform balance of tail gas stream) reflection to high temperature silicon rod heat radiation, so as to drop
The low reduction power consumption of reduction furnace；Temperature Distribution is more uniform, and this type of flow of the present invention can be efficiently controlled in reduction furnace
Temperature, localized high temperature regions will not be generated, the reduction power consumption of reduction furnace is lower than the prior art.The especially growth quality of silicon rod
It is more easy to control.Due to lifting electrode be alternately distributed and into the alternatively distributed effect of outlet it is more preferable, more improve material in stove
The uniformity of distribution.
4th, it illustrates
Fig. 1 is schematic structural view of the invention.
Fig. 2 is the chassis top view of stove of the present invention.
5th, specific embodiment
As shown in the figure, furnace bottom 1, electrode support 2, stove foot 3, furnace wall 4, gas outlet 5, air inlet pipe 6, peephole 7,9, stove in figure
The spare gas outlet 8 of wall, air inlet pipe mounting disc 10, electrode 11, lifting electrode 12, lifting electrode installation site 13, lifting electrode peace
Fill stent 14, hemisphere top furnace chamber 15.
The present invention includes：Chassis and furnace body, the furnace body are the top on chassis, and furnace body is cylindric plus spherical top reaction
Chamber；Chassis is discoid, and raw material gas inlet and offgas outlet are distributed on chassis, and 30-50 is evenly distributed on chassis to electrode (depending on stove
The size of body also includes lifting electrode), half electrode homogeneous vertical on chassis is installed, the other half electrode is lifting electricity
Vertically-mounted electrode is interspersed on pole, with chassis, lifts the bottom end of electrode far from chassis 3-10cm, especially 5-6cm；Lifting electricity
For the upper end position of pole with cylindric concordant with spherical top intersection, raw material gas inlet passes through a height of 3-10cm, especially 5-6cm
Air inlet pipe is mounted on chassis.The distance of adjacent raw material gas inlet be 8-12cm, raw material gas inlet installation air inlet pipe 6 it is straight
Diameter is 4-6mm；
Furnace wall internal face is silver-plated, the reflection to high temperature silicon rod heat radiation, and electrode 11, lifting electrode 12 are pairs of peace
Dress；
Raw material gas inlet and offgas outlet are distributed on the circumference of the different radii on chassis, the cloth on the circumference of a radius
When putting raw material gas inlet, offgas outlet is arranged on the circumference of adjacent radius.The increased interval of radius of adjacent circumferential can be with
It is identical or radius is bigger, the increased interval of radius is smaller.
Furnace body is cylindric to clamp the stake body of the concordant lifting electrode of titanium gasket extraction with spherical top intersection, and titanium gasket is drawn
Titanium framework body is angle titanium-type material.
Claims (2)
1. a kind of polycrystalline silicon reducing furnace, it is characterized in that including：Chassis and furnace body, the furnace body are the top on chassis, and furnace body is circle
Column adds the reaction chamber of spherical top；Chassis is discoid, and raw material gas inlet and offgas outlet are distributed on chassis, it is characterized in that
Uniformly distributed 30-50 to electrode, install by half electrode homogeneous vertical on chassis on chassis, the other half electrode is lifting electrode,
It is interspersed with electrode vertically-mounted on chassis, lifts the bottom end of electrode far from chassis 3-10cm；Lift electrode upper end position with
Cylindric concordant with spherical top intersection, raw material gas inlet is mounted on by the air inlet pipe of a height of 3-10cm on chassis；In furnace wall
Wall surface is silver-plated；
Raw material gas inlet and offgas outlet are distributed on the circumference of the different radii on chassis, are arranged on the circumference of a radius former
When expecting gas import, offgas outlet is arranged on the circumference of adjacent radius.
2. polycrystalline silicon reducing furnace according to claim 1, it is characterized in that furnace body is cylindric to clamp titanium with spherical top intersection
Gasket draws the stake body of concordant lifting electrode, and it is angle titanium-type material that titanium gasket, which draws titanium framework body,.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610463754.XA CN106115711B (en) | 2016-06-23 | 2016-06-23 | A kind of polycrystalline silicon reducing furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610463754.XA CN106115711B (en) | 2016-06-23 | 2016-06-23 | A kind of polycrystalline silicon reducing furnace |
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| CN106115711A CN106115711A (en) | 2016-11-16 |
| CN106115711B true CN106115711B (en) | 2018-06-29 |
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| CN107720756A (en) * | 2017-11-03 | 2018-02-23 | 亚洲硅业（青海）有限公司 | A kind of polycrystalline silicon reducing furnace |
| CN112624119A (en) * | 2020-12-30 | 2021-04-09 | 湖南三安半导体有限责任公司 | Silicon carbide powder, preparation method and application thereof, and reaction device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201105990Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201105991Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201473328U (en) * | 2009-08-10 | 2010-05-19 | 上海森和投资有限公司 | Tail gas outlet structure of polysilicon hydrogen reducing furnace |
| CN201512418U (en) * | 2009-09-24 | 2010-06-23 | 上海森松压力容器有限公司 | Polycrystalline silicon reducing furnace |
| CN104724705A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063370A (en) * | 1983-09-16 | 1985-04-11 | Hitachi Koki Co Ltd | Apparatus for manufacturing amorphous silicon hydride |
| JP3227549B2 (en) * | 1992-12-10 | 2001-11-12 | 三菱マテリアルポリシリコン株式会社 | Reactor for semiconductor grade polycrystalline silicon production |
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2016
- 2016-06-23 CN CN201610463754.XA patent/CN106115711B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201105990Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201105991Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace |
| CN201473328U (en) * | 2009-08-10 | 2010-05-19 | 上海森和投资有限公司 | Tail gas outlet structure of polysilicon hydrogen reducing furnace |
| CN201512418U (en) * | 2009-09-24 | 2010-06-23 | 上海森松压力容器有限公司 | Polycrystalline silicon reducing furnace |
| CN104724705A (en) * | 2015-03-27 | 2015-06-24 | 中国恩菲工程技术有限公司 | Chassis assembly for polycrystalline silicon reduction furnace |
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