CN201785198U - 30-pair-rod polysilicon reduction furnace - Google Patents
30-pair-rod polysilicon reduction furnace Download PDFInfo
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- CN201785198U CN201785198U CN2010202156098U CN201020215609U CN201785198U CN 201785198 U CN201785198 U CN 201785198U CN 2010202156098 U CN2010202156098 U CN 2010202156098U CN 201020215609 U CN201020215609 U CN 201020215609U CN 201785198 U CN201785198 U CN 201785198U
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- heater
- polycrystalline silicon
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Abstract
A 30-pair-rod polysilicon reduction furnace is more uniform in feeding air distribution, more sufficient in reaction, larger in the number of polysilicon rods with larger lengths and diameters by adopting measures such as employing large-pair-number electrodes on the bottom plate of the furnace, arranging a smooth silver layer on the inner wall of the reduction furnace, evenly arranging a plurality of air inlet nozzles, increasing the height and the diameter of a furnace body and the like, accordingly remarkably improves reaction efficiency and yield of a single furnace, increases the yield of a single furnace to 5-6 tons, produces polysilicon products with higher purity by the aid of the chemical characteristics and excellent processability of silver and mirror effect of the silver after polishing, simultaneously reduces energy consumption, and consequently greatly reduces production cost of polysilicon.
Description
Technical field
The utility model relates to a kind of reduction furnace that polysilicon is used of producing, particularly a kind of with the output that improves single stove and cut down the consumption of energy into purpose greatly to excellent number polycrystalline silicon reducing furnace.
Background technology
Polycrystalline silicon reducing furnace is a key equipment of producing polycrystalline silicon raw material, is again the equipment of a highly energy-consuming simultaneously.Therefore, the design of reduction furnace and manufacturing directly have influence on output, quality and the production cost of product.Along with striving unexpectedly of polysilicon market is growing more intense, require production of polysilicon must accomplish to make full use of the production means, enhance productivity, reduce production costs.Therefore, exploitation greatly to excellent number reduction furnace for output, quality improve in production of polysilicon enterprise, reducing investment outlay seems particularly important.
Existing polycrystalline silicon reducing furnace structure is made up of chassis, body of heater, and the stove main body adopts stainless material.Electrode, inlet mouth and reduction tail gas venting port are set on the chassis.From saving energy and reduce the cost, enhance productivity, reduce production costs consideration, its single furnace output remains further to be improved.
Summary of the invention
The purpose of this utility model is for output that improves product and quality, structure and size to the cooling chamber of existing polycrystalline silicon reducing furnace chassis and body of heater are optimized design, design a kind of output that improves polysilicon and cut down the consumption of energy, reduce the high yield polycrystalline silicon reducing furnace of the cost of production of polysilicon.
Constructional feature of the present utility model has realized above-mentioned purpose of design.The utility model is a kind of 30 pairs of excellent polycrystalline silicon reducing furnaces, constitute by chassis and body of heater, on body of heater and chassis, be provided with cooling water cavity and cooling water intake and water outlet, be furnished with electrode, inlet mouth and venting port on the chassis, the chassis adopts fastening piece to be connected with body of heater, it is characterized in that: it is the slick silver layer of 2-3mm that the reduction furnace inwall has a layer thickness, and 30 pairs of electrodes that are used to generate silicon rod are arranged on the chassis.
30 counter electrode of above-mentioned setting are dividing three circles uniform on 360 ° on the chassis: inner ring is 5 counter electrode, and centre circle is 10 counter electrode, and the outer ring is 15 counter electrode, and from coil to coil increases by 5 pairs; The chassis is provided with 8 nozzles of air supply, divides two circles to distribute: be provided with 2 nozzles of air supply at a distance of 180 ° between inner ring and the centre circle electrode, between centre circle and the outer ring electrode on 360 ° 6 nozzles of air supply of uniform distribution, center chassis is provided with the air outlet of reduction tail gas.
In order to satisfy the production needs of high yield polycrystalline silicon reducing furnace, the body of heater height of polycrystalline silicon reducing furnace is provided with greater than 3.0 meters.
The utility model adopts big logarithm electrode, stove inwall that slick silver layer is set on the stove chassis owing to having adopted, a plurality of nozzles of air supply evenly are set, measures such as increase body of heater height and diameter have been taked, feed gas when reacting in the polycrystalline silicon reducing furnace is more evenly distributed, reacts more abundant, polycrystalline silicon rod is more, longer, diameter is bigger, thereby has significantly improved reaction efficiency and single furnace output, and single furnace output can reach the 5-6 ton; And utilize the chemical property of silver and good processibility, and the mirror effect after the polishing, when producing the higher polysilicon product of purity, reduce energy consumption significantly, thereby greatly reduced the production cost of polysilicon.
Description of drawings
Fig. 1 is the structural representation of these 30 pairs of excellent polycrystalline silicon reducing furnaces.
Fig. 2 is stove chassis electrode, nozzle of air supply and venting port distribution schematic diagram.
As shown in the figure, the utility model is 30 pairs of excellent polycrystalline silicon reducing furnaces of a kind of high yield, is made of chassis 9 and body of heater 5, and the chassis adopts ring flange 8 to be connected with body of heater.Body of heater 5 is provided with cooling water cavity chuck 7, also is provided with cooling water jecket on the chassis 9, and chuck is provided with cooling water intakeoutfall.Body of heater is provided with 9 windows 4 that are used to observe and measure temperature, divides 120 ° of upper, middle and lower-rankings uniform; The reduction furnace inwall has the slick silver layer 3 of one deck, thickness 2-3mm.The chassis is provided with 30 pairs 10 at electrode, and divide three circles to distribute on the chassis: inner ring is 5 counter electrode, and centre circle is 10 counter electrode, and the outer ring is 15 counter electrode, and from coil to coil increases by 5 counter electrode; Lower furnace has intake ducting 2 to be communicated with 8 nozzles of air supply 11 on the chassis, 8 nozzles of air supply are dividing two circles to distribute on the chassis: be provided with 2 nozzles of air supply at a distance of 180 ° between inner ring and the centre circle electrode, 6 nozzles of air supply of uniform distribution between centre circle and the outer ring electrode; Center chassis is provided with the air outlet 1 of reduction tail gas; The height of polycrystalline silicon rod is designed to 2500mm,, growth diameter is 150mm, therefore, the body of heater height of these 30 pairs of excellent polycrystalline silicon reducing furnaces is greater than 3.0 meters.
Claims (3)
1.30 to excellent polycrystalline silicon reducing furnace, comprise chassis and body of heater, on body of heater and chassis, be provided with cooling water cavity and be used for the import and export that water coolant passes in and out, be furnished with electrode, inlet mouth and venting port on the chassis, the chassis adopts fastening piece to be connected with body of heater, body of heater is provided with the window that is used to observe and measure temperature, it is characterized in that it is the slick silver layer of 2-3mm that the reduction furnace inwall has a layer thickness, has 30 pairs of electrodes that are used to generate silicon rod on the chassis.
2. 30 pairs of excellent polycrystalline silicon reducing furnaces according to claim 1, it is characterized in that 30 counter electrode are dividing three circles uniform on 360 ° on the chassis, inner ring is 5 counter electrode, centre circle is 10 counter electrode, the outer ring is 15 counter electrode, the chassis is provided with 8 nozzles of air supply: be provided with 2 nozzles of air supply at a distance of 180 ° between inner ring and the centre circle electrode, between centre circle and the outer ring electrode on 360 ° 6 nozzles of air supply of uniform distribution, center chassis is provided with the venting port of reduction tail gas.
3. polycrystalline silicon reducing furnace according to claim 2, the body of heater height that it is characterized in that polycrystalline silicon reducing furnace is greater than 3.0 meters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202156098U CN201785198U (en) | 2010-06-04 | 2010-06-04 | 30-pair-rod polysilicon reduction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202156098U CN201785198U (en) | 2010-06-04 | 2010-06-04 | 30-pair-rod polysilicon reduction furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201785198U true CN201785198U (en) | 2011-04-06 |
Family
ID=43817173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202156098U Expired - Fee Related CN201785198U (en) | 2010-06-04 | 2010-06-04 | 30-pair-rod polysilicon reduction furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201785198U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102211772A (en) * | 2011-04-18 | 2011-10-12 | 天津大学 | Polysilicon reduction furnace with concave mirror surfaces on inner wall and concave mirror surfaces for polysilicon reduction furnace |
| CN110114310A (en) * | 2016-12-29 | 2019-08-09 | 韩华化学株式会社 | Poly plant |
-
2010
- 2010-06-04 CN CN2010202156098U patent/CN201785198U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102211772A (en) * | 2011-04-18 | 2011-10-12 | 天津大学 | Polysilicon reduction furnace with concave mirror surfaces on inner wall and concave mirror surfaces for polysilicon reduction furnace |
| CN102211772B (en) * | 2011-04-18 | 2013-02-06 | 天津大学 | Polysilicon reduction furnace with concave mirror surfaces on inner wall and concave mirror surfaces for polysilicon reduction furnace |
| CN110114310A (en) * | 2016-12-29 | 2019-08-09 | 韩华化学株式会社 | Poly plant |
| CN110114310B (en) * | 2016-12-29 | 2023-03-21 | 韩华化学株式会社 | Polycrystalline silicon manufacturing apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110406 Termination date: 20190604 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |