CN207016494U - A kind of electric controllable efficient polycrystalline silicon reduction furnace - Google Patents
A kind of electric controllable efficient polycrystalline silicon reduction furnace Download PDFInfo
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- CN207016494U CN207016494U CN201720516530.0U CN201720516530U CN207016494U CN 207016494 U CN207016494 U CN 207016494U CN 201720516530 U CN201720516530 U CN 201720516530U CN 207016494 U CN207016494 U CN 207016494U
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- reduction furnace
- concentric circles
- polycrystalline silicon
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Abstract
The utility model discloses a kind of electric controllable efficient polycrystalline silicon reduction furnace, including chassis and body of heater, body of heater is connected on chassis and reactor inner chamber is limited between body of heater and chassis, multiple electrodes are provided with the reactor inner chamber, the electrode is arranged in the electrode hole on the chassis, the chassis is provided with multiple air inlets and at least one gas outlet, the 1st layer~n-th layer concentric circles is outwards sequentially provided with centered on the polycrystalline silicon reduction furnace base plate center, wherein n >=4, 3*n is evenly distributed with every layer of concentric circles to electrode hole, gas outlet is combined on outermost concentric circles at least 3* (n 1) is set to electrode hole, each pair electrode hole silicon core realizes overlap joint, electrode on same layer concentric circles is divided into three groups and is connected with three-phase alternating-current supply, at least two groups of the three-phase alternating-current supply；On the premise of polysilicon quality is ensured, polysilicon yield is improved, reduces the production cost and energy consumption of polysilicon.
Description
Technical field
It the utility model is related to field of polysilicon production, more particularly to a kind of electric controllable efficient polycrystalline silicon reduction furnace.
Background technology
At present both at home and abroad production of polysilicon corporate boss use " improved Siemens ", its production procedure be using chlorine with
Hydrogen synthesising hydrogen (or outsourcing hydrogen chloride), hydrogen chloride and silica flour synthesizing trichlorosilane at a certain temperature, then purify three
After being mixed by a certain percentage with hydrogen after chlorine hydrogen silicon, enter under certain temperature, pressure from the air inlet on the chassis of reduction furnace
In body of heater, deposition generation polysilicon, reaction end gas are discharged through the gas outlet on chassis on the high temperature silicon rod of energization.Core reaction
The design particularly method for arranging of chassis electrode of device polycrystalline silicon reducing furnace directly affects polysilicon with electric control method
The key of Yield and quality and production cost.
The deisgn approach maximization of polycrystalline silicon reducing furnace, or volume increase is realized under same physical dimension, i.e., by increasing silicon core
To improve the yield of single stove and reduce energy consumption.The electrode arrangements of the polycrystalline silicon reducing furnace of actual motion and connected mode are with circle at present
Week or hexagon are uniformly arranged, and whether gas field and thermal field are rationally by chassis Top electrode, air inlet and gas outlet in reduction furnace
What arrangement determined, while Top electrode arrangement in chassis decides on chassis and the connection of electrode group and power control system are to electrode group
Control.Heat system in reduction furnace contains the heat radiation, the heat radiation with furnace wall and body of heater of silicon rod and silicon rod
Interior airflow convection heat transfer, the convection heat transfer' heat-transfer by convection etc. of cooling water.Silicon core quantity increase from inside to outside in body of heater, in order to maintain polysilicon
Deposition velocity is uniform, it is necessary to makes inside and outside offer thermal source different (i.e. power is different), this requires the electric current of inside and outside silicon rod is realized to divide
Layer control, ensure the independent control of each layer electric current, the final growth morphology for controlling silicon rod, improve the percentage of A-class goods.
It there is no optimal chassis of reducing furnace electrode to arrange at present and connection method be next while solves growth yield, the matter of silicon rod
Amount and energy consumption problem.
Utility model content
In view of the above-mentioned deficiency that presently, there are, the utility model provides a kind of electric controllable efficient polycrystalline silicon reduction furnace,
The power load of power-supply device can be made full use of, and can realizes that the uniform arrangement of electrode and the electric current of each layer electrode are independently controlled
System.
To reach above-mentioned purpose, embodiment of the present utility model adopts the following technical scheme that：
A kind of electric controllable efficient polycrystalline silicon reduction furnace, the reduction furnace include chassis and body of heater, and body of heater is connected to bottom
Reactor inner chamber is limited on disk and between body of heater and chassis, multiple electrodes, the electrode are provided with the reactor inner chamber
It is arranged in the electrode hole on the chassis, the chassis is provided with multiple air inlets and at least one gas outlet, with described more
Outwards be sequentially provided with centered on crystal silicon chassis of reducing furnace center the 1st layer~n-th layer concentric circles, wherein n >=4, on every layer of concentric circles
3*n is evenly distributed with to electrode hole, gas outlet is combined on outermost concentric circles at least 3* (n-1) is set to electrode hole, each pair
Electrode hole silicon core, which is realized, to be overlapped, and the electrode on same layer concentric circles is divided into three groups and is connected with three-phase alternating-current supply, the three-phase
At least two groups of AC power.
According to one side of the present utility model, the chassis has double-deck a gas handling system and gas extraction system, it is described enter
Gas port is provided with nozzle of air supply, the double-deck gas handling system include double-deck air inlet endless tube and be connected with double-deck air inlet endless tube it is multiple enter
Tracheae, the air inlet pipe connect one to one with nozzle of air supply respectively, the gas extraction system include gas coil pipe and with outlet disk
The connected at least one escape pipe of pipe, the escape pipe connect one to one with gas outlet respectively.
According to one side of the present utility model, the nozzle of air supply is evenly distributed on the spacing away from adjacent two layers concentric circles
From on an equal concentric circles.
According to one side of the present utility model, between the spacing and concentric circles Top electrode hole between adjacent two layers concentric circles
Spacing it is equal.
According to one side of the present utility model, the center on the chassis is provided with gas outlet.
According to one side of the present utility model, the gas outlet is 3~6, is distributed on outermost layer concentric circles.
According to one side of the present utility model, high-temperature water cooling chamber is provided with the body of heater, the High-temperature cooling chamber connects
High-temperature cooling water inlet and High-temperature cooling water out are connected to, the High-temperature cooling water inlet is located at the bottom of the body of heater, described
High-temperature cooling water out is located at the top of the body of heater.
According to one side of the present utility model, the high-temperature water cooling intracavitary is surround from the bottom to top forms helical form cooling
Runner.
According to one side of the present utility model, the gas outlet is connected with sub-cooled offgas duct.
The advantages of the utility model is implemented：Electric controllable efficient polycrystalline silicon reduction furnace described in the utility model, including
Chassis and body of heater, body of heater are connected on chassis and reactor inner chamber are limited between body of heater and chassis, the reactor inner chamber
In be provided with multiple electrodes, the electrode is arranged in the electrode hole on the chassis, the chassis be provided with multiple air inlets and
At least one gas outlet, the 1st layer~n-th layer is outwards sequentially provided with centered on the polycrystalline silicon reduction furnace base plate center with one heart
Circle (n >=4), 3*n is evenly distributed with every layer of concentric circles to electrode hole, combining gas outlet on outermost concentric circles is set at least
3* (n-1) is to electrode hole, and each pair electrode hole silicon core, which is realized, to be overlapped, and the electrode on same layer concentric circles is divided into three groups and intersected with three
Flow power supply connection, at least two groups of the three-phase alternating-current supply；Take full advantage of the space in reduction furnace, realize it is more dense and
Uniform electrode arrangements, using the uniform individual-phase control of interior external power, can make full use of the power load of power-supply device, and and can is real
The now power independent control of each layer electrode, so as on the premise of polysilicon quality is ensured, improve polysilicon yield, reduce polycrystalline
The production cost and energy consumption of silicon.
Brief description of the drawings
In order to illustrate more clearly of the technical scheme in the embodiment of the utility model, will make below to required in embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the utility model,
For those of ordinary skill in the art, on the premise of not paying creative work, can also be obtained according to these accompanying drawings
Other accompanying drawings.
Fig. 1 is a kind of structural representation of electric controllable efficient polycrystalline silicon reduction furnace described in the utility model；
Fig. 2 is a kind of chassis distribution schematic diagram of electric controllable efficient polycrystalline silicon reduction furnace described in the utility model；
Fig. 3 is a kind of chassis electrode packet signal of electric controllable efficient polycrystalline silicon reduction furnace described in the utility model
Figure；
Fig. 4 is packet electrode described in the utility model and three phase mains connection diagram.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, a kind of electric controllable efficient polycrystalline silicon reduction furnace, the reduction furnace include
Chassis 1 and body of heater 2, body of heater 2 is connected on chassis 1 and reactor inner chamber 101 is limited between body of heater 2 and chassis 1, described
Multiple electrodes 3 are provided with reactor inner chamber, the electrode 3 is arranged in the One On The Chassis electrode hole 31, on the chassis 1
Provided with multiple air inlets 11 and at least one gas outlet 12, outwards set successively centered on the polycrystalline silicon reduction furnace base plate center
There is the 1st layer~n-th layer concentric circles (n >=4), 3*n is evenly distributed with every layer of concentric circles to electrode hole, on outermost concentric circles
At least 3* (n-1) is set to electrode hole with reference to gas outlet, each pair electrode hole silicon core, which is realized, to be overlapped, the electricity on same layer concentric circles
Pole is divided into three groups and is connected with three-phase alternating-current supply, at least two groups of the three-phase alternating-current supply.
In actual applications, the electrode logarithm 3n (n+1)/2 pair, wherein, n is the number of plies of distribution of electrodes, and n >=4, institute
State 3n (n+1)/2 pair electrode and be divided into n-layer arrangement, every layer by 3 pairs, 6 pairs, 9 pairs ..., 3n is to circumferential arrangement, wherein most peripheral knot
Close gas outlet to realize built in gas outlet, at least arrange 3 (n-1) to electrode.The chassis is provided with multiple air inlets, and at least one
Individual gas outlet.The electrode is electrically controlled using three-phase alternating current, controls phase packet classification, n-layer electrode is using at least two-stage six
Phase control.The reactor takes full advantage of the space in reduction furnace, more dense and uniform electrode arrangements is realized, using inside and outside
The uniform individual-phase control of power, can make full use of the power load of power-supply device, and and can realizes that the power of each layer electrode is independently controlled
System, so as on the premise of polysilicon quality is ensured, improve polysilicon yield, reduce the production cost and energy consumption of polysilicon.
After HIGH-PURITY SILICON core on the electrode can use top preheating preheating, apply 6~12kV or so high-voltage breakdown
Conduction is simultaneously heated；Or directly apply high-voltage breakdown conduction and be heated.
The power of the n-layer electrode is homogeneously classified multiphase layer independent control, silicon rod power in growth course inside and outside guarantee
It is independently adjustable, so as to reach the adjustable purpose of every layer of temperature.
In actual applications, the n-layer is 5 layers, and electrode 42 is right altogether, and 5 layers of electrode is divided into Nei Sanquan and outer two circle
Concentric circles.Three circle concentric circles are one-level three phase mains Power Control in described, and outer two circles concentric circles is two level three phase mains power
Control.Realize independent control.
In actual applications, the chassis 1 has double-deck gas handling system 4 and gas extraction system 5, and the air inlet 11 is provided with
Nozzle of air supply, the double-deck gas handling system 4 include double-deck air inlet endless tube 41 and the multiple air inlet pipe being connected with double-deck air inlet endless tube
42, the air inlet pipe connects one to one with nozzle of air supply respectively, the gas extraction system 5 include gas coil pipe 51 and with outlet disk
The connected at least one escape pipe 52 of pipe, the escape pipe connect one to one with gas outlet respectively.The chassis is by metal material
Material is made, the relatively low material such as metal material, optional stainless steel, alloy, gold, silver with medium contact portion preferred emission rate.
In actual applications, the nozzle of air supply be evenly distributed on away between adjacent two layers concentric circles it is equidistant together
On heart circle.The uniform arranged in concentric circles of the enterprising gas port in chassis, air inlet is by 4 layers of sky for being uniformly distributed in five layers of electrode and surrounding
In, formation is arranged symmetrically, and at least one air inlet is located at the center on chassis.
In actual applications, the spacing between the spacing between adjacent two layers concentric circles and concentric circles Top electrode hole is equal.
The n-layer electrode presses concentric circles storied placement on chassis, and spacing is equal between the n-layer electrode adjacent two layers,
Distance is equal between two neighboring electrode in the same layer electrode.
In actual applications, the gas outlet can be 1, positioned at the center on the chassis.
In actual applications, the gas outlet can be 3~6, be distributed on outermost layer concentric circles.
In actual applications, high-temperature water cooling chamber 21 is provided with the body of heater, the High-temperature cooling chamber 21 is connected with high temperature
Cooling water inlet 22 and High-temperature cooling water out 23, the High-temperature cooling water inlet are located at the bottom of the body of heater, the high temperature
Coolant outlet is located at the top of the body of heater.The body of heater furnace tube is made up of metal material, is preferably sent out with medium contact portion
Penetrate the materials such as the relatively low metal material of rate, optional stainless steel, alloy, gold, silver.
In actual applications, the high-temperature water cooling intracavitary is surround from the bottom to top forms helical form coolant flow channel.
In actual applications, the gas outlet is connected with sub-cooled offgas duct.
The advantages of the utility model is implemented：Electric controllable efficient polycrystalline silicon reduction furnace described in the utility model, including
Chassis and body of heater, body of heater are connected on chassis and reactor inner chamber are limited between body of heater and chassis, the reactor inner chamber
In be provided with multiple electrodes, the electrode is arranged in the electrode hole on the chassis, the chassis be provided with multiple air inlets and
At least one gas outlet, the 1st layer~n-th layer is outwards sequentially provided with centered on the polycrystalline silicon reduction furnace base plate center with one heart
Circle (n >=4), 3*n is evenly distributed with every layer of concentric circles to electrode hole, combining gas outlet on outermost concentric circles is set at least
3* (n-1) is to electrode hole, and each pair electrode hole silicon core, which is realized, to be overlapped, and the electrode on same layer concentric circles is divided into three groups and intersected with three
Flow power supply connection, at least two groups of the three-phase alternating-current supply；Take full advantage of the space in reduction furnace, realize it is more dense and
Uniform electrode arrangements, using the uniform individual-phase control of interior external power, can make full use of the power load of power-supply device, and and can is real
The now power independent control of each layer electrode, so as on the premise of polysilicon quality is ensured, improve polysilicon yield, reduce polycrystalline
The production cost and energy consumption of silicon.
It is described above, only specific embodiment of the present utility model, but the scope of protection of the utility model is not limited to
In this, any those skilled in the art is in the change that in technical scope, can be readily occurred in disclosed in the utility model
Change or replace, should all cover within the scope of protection of the utility model.Therefore, the scope of protection of the utility model should be with described
Scope of the claims is defined.
Claims (9)
1. a kind of electric controllable efficient polycrystalline silicon reduction furnace, the reduction furnace include chassis and body of heater, body of heater is connected to chassis
Above and between body of heater and chassis limit reactor inner chamber, it is characterised in that multiple electrodes are provided with the reactor inner chamber,
The electrode is arranged in the electrode hole on the chassis, and the chassis is provided with multiple air inlets and at least one gas outlet,
Outwards be sequentially provided with centered on the polycrystalline silicon reduction furnace base plate center the 1st layer~n-th layer concentric circles, wherein n >=4, every layer
3*n is evenly distributed with concentric circles to electrode hole, gas outlet is combined on outermost concentric circles at least 3* (n-1) is set to electrode
Hole, each pair electrode hole silicon core, which is realized, to be overlapped, and the electrode on same layer concentric circles is divided into three groups and is connected with three-phase alternating-current supply, institute
State at least two groups of three-phase alternating-current supply.
2. electric controllable efficient polycrystalline silicon reduction furnace according to claim 1, it is characterised in that the chassis has
Double-deck gas handling system and gas extraction system, the air inlet are provided with nozzle of air supply, and the double-deck gas handling system enters compression ring comprising bilayer
Pipe and the multiple air inlet pipe being connected with double-deck air inlet endless tube, the air inlet pipe connects one to one with nozzle of air supply respectively, described
At least one escape pipe that gas extraction system includes gas coil pipe and is connected with going out gas coil pipe, the escape pipe respectively with gas outlet one
One corresponding connection.
3. electric controllable efficient polycrystalline silicon reduction furnace according to claim 2, it is characterised in that the nozzle of air supply is equal
It is even to be distributed in away between adjacent two layers concentric circles on an equidistant concentric circles.
4. electric controllable efficient polycrystalline silicon reduction furnace according to claim 1, it is characterised in that adjacent two layers concentric circles
Between spacing it is equal with the spacing between concentric circles Top electrode hole.
5. electric controllable efficient polycrystalline silicon reduction furnace according to claim 1, it is characterised in that the center on the chassis
Provided with gas outlet.
6. electric controllable efficient polycrystalline silicon reduction furnace according to claim 1, it is characterised in that the gas outlet is 3
~6, it is distributed on outermost layer concentric circles.
7. electric controllable efficient polycrystalline silicon reduction furnace according to claim 1, it is characterised in that be provided with the body of heater
High-temperature water cooling chamber, the High-temperature cooling chamber are connected with High-temperature cooling water inlet and High-temperature cooling water out, the High-temperature cooling
Water inlet is located at the bottom of the body of heater, and the High-temperature cooling water out is located at the top of the body of heater.
8. electric controllable efficient polycrystalline silicon reduction furnace according to claim 7, it is characterised in that the high-temperature water cooling
Intracavitary surround form helical form coolant flow channel from the bottom to top.
9. the electric controllable efficient polycrystalline silicon reduction furnace according to one of claim 1 to 8, it is characterised in that it is described go out
Gas port is connected with sub-cooled offgas duct.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720516530.0U CN207016494U (en) | 2017-05-10 | 2017-05-10 | A kind of electric controllable efficient polycrystalline silicon reduction furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720516530.0U CN207016494U (en) | 2017-05-10 | 2017-05-10 | A kind of electric controllable efficient polycrystalline silicon reduction furnace |
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| CN207016494U true CN207016494U (en) | 2018-02-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108773846A (en) * | 2018-08-31 | 2018-11-09 | 内蒙古通威高纯晶硅有限公司 | A kind of energy-efficient chassis of reducing furnace and polycrystalline silicon reducing furnace |
| CN109133066A (en) * | 2018-10-23 | 2019-01-04 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of electronic-grade polycrystalline silicon chassis of reducing furnace and reduction furnace |
-
2017
- 2017-05-10 CN CN201720516530.0U patent/CN207016494U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108773846A (en) * | 2018-08-31 | 2018-11-09 | 内蒙古通威高纯晶硅有限公司 | A kind of energy-efficient chassis of reducing furnace and polycrystalline silicon reducing furnace |
| CN109133066A (en) * | 2018-10-23 | 2019-01-04 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of electronic-grade polycrystalline silicon chassis of reducing furnace and reduction furnace |
| CN109133066B (en) * | 2018-10-23 | 2023-12-19 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Electronic grade polycrystalline silicon reduction furnace chassis and reduction furnace |
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