JP7190985B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7190985B2 JP7190985B2 JP2019143546A JP2019143546A JP7190985B2 JP 7190985 B2 JP7190985 B2 JP 7190985B2 JP 2019143546 A JP2019143546 A JP 2019143546A JP 2019143546 A JP2019143546 A JP 2019143546A JP 7190985 B2 JP7190985 B2 JP 7190985B2
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- electrode terminal
- semiconductor element
- semiconductor device
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- main electrode
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Description
図1は、実施の形態1における半導体装置の構成を示す断面図である。半導体装置は、ベース部1、半導体素子5、ケース8、主電極端子7、内部電極6および絶縁ブロック10を含む。
実施の形態2における半導体装置を説明する。実施の形態2は実施の形態1の下位概念であり、実施の形態2における半導体装置は、実施の形態1における半導体装置の各構成を含む。なお、実施の形態1と同様の構成および動作については説明を省略する。
実施の形態3における半導体装置を説明する。実施の形態3は実施の形態1の下位概念であり、実施の形態3における半導体装置は、実施の形態1における半導体装置の各構成を含む。なお、実施の形態1または2と同様の構成および動作については説明を省略する。
実施の形態4における半導体装置を説明する。実施の形態4は実施の形態1の下位概念であり、実施の形態4における半導体装置は、実施の形態1における半導体装置の各構成を含む。なお、実施の形態1から3のいずれかと同様の構成および動作については説明を省略する。
Claims (6)
- ベース部と、
前記ベース部に搭載された半導体素子と、
前記半導体素子の外周を囲うケースに保持され、かつ、端部が前記ケースの内側に向かって突出する電極端子と、
絶縁性を有し、前記半導体素子と前記ケースとの間における前記ベース部上に設けられた絶縁ブロックと、
一端が前記絶縁ブロック上で前記電極端子の前記端部に接合され、かつ、前記一端から他端に延在する領域のうち一部が前記半導体素子に接合される内部配線と、を備え、
前記絶縁ブロックの構成材料は、窒化アルミニウム及び窒化珪素のうち少なくとも一つである、
半導体装置。 - 前記内部配線の前記一端と前記電極端子の前記端部とは、はんだによって、接合されている、請求項1に記載の半導体装置。
- ベース部と、
前記ベース部に搭載された半導体素子と、
前記半導体素子の外周を囲うケースに保持され、かつ、端部が前記ケースの内側に向かって突出する電極端子と、
絶縁性を有し、前記半導体素子と前記ケースとの間における前記ベース部上に設けられた絶縁ブロックと、
一端が前記絶縁ブロック上で前記電極端子の前記端部に接合され、かつ、前記一端から他端に延在する領域のうち一部が前記半導体素子に接合される内部配線と、を備え、
前記内部配線の前記一端と前記電極端子の前記端部とは、平面視において、櫛歯形状をそれぞれ有し、
前記内部配線の前記櫛歯形状は、前記電極端子の前記櫛歯形状に嵌合し、
前記内部配線の前記櫛歯形状の側面と前記電極端子の前記櫛歯形状の側面とが互いに接合されている、半導体装置。 - 前記内部配線の前記一端と前記電極端子の前記端部とは、金属ワイヤによって、接合されている、請求項1に記載の半導体装置。
- 前記内部配線の前記一端は、突起部を含み、
前記絶縁ブロックは、前記内部配線の前記突起部に嵌合する窪み部を含む、請求項4に記載の半導体装置。 - 前記電極端子の前記端部は、板形状を有し、
前記内部配線は、板形状を有し、かつ、前記電極端子の前記端部と前記半導体素子との間を電気的に接続している、請求項1から請求項5のいずれか一項に記載の半導体装置。
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JP2008235651A (ja) | 2007-03-22 | 2008-10-02 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP2012043956A (ja) | 2010-08-18 | 2012-03-01 | Toshiba Corp | 半導体装置及び電力用半導体装置 |
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