CN111448653B - 半导体装置及电力转换装置 - Google Patents

半导体装置及电力转换装置 Download PDF

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Publication number
CN111448653B
CN111448653B CN201780097547.XA CN201780097547A CN111448653B CN 111448653 B CN111448653 B CN 111448653B CN 201780097547 A CN201780097547 A CN 201780097547A CN 111448653 B CN111448653 B CN 111448653B
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metal electrode
circuit
electronic circuit
semiconductor device
semiconductor element
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CN111448653A (zh
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井本裕儿
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

目的在于提供一种能够抑制在树脂的不希望的部位产生裂纹的技术。半导体装置具有：电子电路(7)，其包含半导体元件(4)；金属电极(5)，其与电子电路(7)直接连接；以及封装树脂(6)。封装树脂(6)对电子电路(7)和金属电极(5)进行封装。金属电极(5)的与电子电路(7)相对侧的相反侧的面的端缘部分(5a)具有锐角形状，金属电极(5)的与电子电路(7)相对的面的端缘部分(5b)具有圆弧形状或者钝角形状。

Description

半导体装置及电力转换装置
技术领域
本发明涉及一种通过树脂对金属电极进行封装的半导体装置和具有该半导体装置的电力转换装置。
背景技术
就通过树脂对金属电极等进行封装的壳体型或者传递型的功率模块而言，为了应对高可靠性以及大电流，将半导体元件或者电路面与金属电极直接连接的构造成为趋势。就本构造而言，虽然半导体元件与金属电极的连接可靠性高，但由于半导体元件、搭载该半导体元件的电路面以及金属电极的线膨胀系数差，在冷热环境下会产生使可靠性降低的热应力。
提出有各种降低这样的热应力的影响的技术。例如在专利文献1的技术中，将金属电极的边缘部的形状设为C倒角形状、R形状。根据这样的结构，能够缓和容易在金属电极的侧部集中的热应力，减少树脂中的裂纹的产生。
专利文献1：日本特开平2-240955号公报
发明内容
就上述构造而言，为了进一步推进大电流化以及低电感化，需要进行将金属电极加厚以及向半导体元件靠近等变更。但是，由于半导体元件或者陶瓷等绝缘基板的线膨胀系数(例如4ppm/K)与金属电极的线膨胀系数(例如在铜的情况下为17ppm/K)之差比较大，因此，如果进行上述那样的变更，则树脂从金属电极承受的应力比较大。因此，即使如专利文献1的技术那样将边缘部的形状设为C倒角形状、R形状，也存在如下问题，即，有时不能抑制树脂中的裂纹的产生，甚至在不希望的部位产生该裂纹。
另外，如果使封装树脂的线膨胀系数接近金属电极的线膨胀系数，则虽然能够减少金属电极周围的树脂裂纹，但封装树脂与绝缘基板的线膨胀系数之差变大。因此，产生封装树脂从绝缘基板剥离，半导体装置的可靠性降低的问题。并且，如果在封装树脂中添加硅酮挠性材料，则虽然能够提高封装树脂相对于应力的耐性，但会产生封装树脂变得昂贵的问题。
因此，本发明是鉴于上述问题而提出的，其目的在于，提供一种能够抑制在树脂的不希望的部位产生裂纹的技术。
本发明所涉及的半导体装置具有：电子电路，其包含半导体元件；金属电极，其与所述电子电路直接连接；以及树脂，其对所述电子电路和所述金属电极进行封装，所述金属电极的与所述电子电路相对侧的相反侧的面的端缘部分具有锐角形状，所述金属电极的与所述电子电路相对的面的端缘部分具有圆弧形状或者钝角形状。
发明的效果
根据本发明，金属电极的与电子电路相对侧的相反侧的面的端缘部分具有锐角形状，金属电极的与电子电路相对的面的端缘部分具有圆弧形状或者钝角形状。根据这样的结构，能够抑制在树脂的不希望的部位产生裂纹。
本发明的目的、特征、方案以及优点通过下面的详细说明和附图而变得更加明确。
附图说明
图1是表示关联半导体装置的概略结构的剖面图。
图2是表示实施方式1所涉及的半导体装置的概略结构的剖面图。
图3是表示实施方式2所涉及的半导体装置的概略结构的剖面图。
图4是表示实施方式3所涉及的半导体装置的概略结构的剖面图。
图5是表示实施方式4所涉及的半导体装置的概略结构的平面图。
图6是表示实施方式5所涉及的半导体装置的概略结构的剖面图。
图7是表示实施方式5所涉及的半导体装置的概略结构的剖面图。
图8是表示电力转换***的结构的框图，该电力转换***应用了实施方式6所涉及的电力转换装置。
具体实施方式
＜关联半导体装置＞
首先，在说明本发明的实施方式所涉及的半导体装置之前，说明与其关联的半导体装置(下面，记为“关联半导体装置”)。
图1是表示关联半导体装置的概略结构的剖面图。如图1所示，在基座板1之上配置有绝缘基板2。在绝缘基板2设置有电路图案等金属部件2a。半导体元件4通过焊料3a等接合材料而与绝缘基板2的金属部件2a接合。金属电极5通过焊料3b等接合材料而与半导体元件4接合。封装树脂6对半导体元件4和金属电极5进行封装。
这里，金属电极5的上表面的端缘部分5a以及金属电极5的下表面的端缘部分5b均具有R形状。根据这样的结构，能够缓和金属电极5的侧面对封装树脂6赋予的应力的集中。
但是，就推进了大电流化以及低电感化的半导体装置而言，即使是图1的结构，有时也不能抑制封装树脂6中的裂纹的产生。而且，存在以下问题，即，有时会在不希望的部位、例如半导体元件4的周边部位等产生该裂纹，有时半导体装置的可靠性降低。与此相对，就本实施方式涉及的半导体装置而言，能够解决这样的问题。
＜实施方式1＞
图2是表示本发明的实施方式1所涉及的半导体装置的概略结构的剖面图。此外，在本实施方式1所涉及的结构要素中，针对与关联半导体装置的结构要素相同或者类似的结构要素，标注相同的参照标号进行说明。
图2的半导体装置具有基座板1、绝缘基板2、焊料3a、3b、半导体元件4、金属电极5、作为树脂的封装树脂6。该半导体装置例如用于对民用设备、电动汽车或者电车等的电动机进行控制的逆变器、或者再生用转换器等。
在基座板1之上配置有绝缘基板2。基座板1例如包含铜(Cu)，绝缘基板2例如包含陶瓷。绝缘基板2可以不与基座板1一体化而是搭载于基座板1，也可以与基座板1一体化。另外，基座板1的背面也可以不是平坦的面，而是与针翅片等冷却器一体化的面。
在绝缘基板2设置有电路图案等金属部件2a。半导体元件4通过焊料3a等接合材料而与绝缘基板2的金属部件2a接合。
另外，电子电路7是包含基座板1、绝缘基板2、焊料3a、3b以及半导体元件4的电路，该电子电路7与金属电极5直接连接。
金属电极5配置于半导体元件4的上方，经由焊料3b与半导体元件4电连接。金属电极5例如是电极端子，包含铜、铝、其他金属材料的至少一种。此外，电路图案与半导体元件4之间的接合以及半导体元件4与金属电极5之间的接合不限于焊料接合。例如，这些接合也可以是银(Ag)接合。
在本实施方式1中，金属电极5的上表面是与电子电路7相对侧的相反侧的面，金属电极5的下表面是与电子电路7相对的面。而且，金属电极5的上表面的端缘部分5a具有锐角形状，金属电极5的下表面的端缘部分5b具有钝角形状即C倒角形状。此外，金属电极5的端缘部分5b也可以取代C倒角形状而具有圆弧形状即R形状。
封装树脂6对电子电路7和金属电极5进行封装。由此，在半导体元件4以及金属电极5的周围填充封装树脂6。
<实施方式1的总结>
如果金属电极5因温度循环或者功率循环而加热或者发热，则金属电极5膨胀，但与线膨胀系数低的半导体元件4以及绝缘基板2相接的封装树脂6被它们约束。因此，封装树脂6从金属电极5承受应力。此时，封装树脂6难以从具有钝角形状的端缘部分5b集中地承受应力，容易从具有锐角形状的端缘部分5a集中地承受应力。
因此，即使在封装树脂6产生裂纹，也会优先产生以端缘部分5a为起点的距电子电路7比较远的裂纹8。在以端缘部分5a为起点的裂纹8产生之后，封装树脂6从金属电极5承受的应力减小，因此能够抑制在电子电路7的附近产生裂纹。
这样，根据本实施方式1所涉及的半导体装置，能够控制裂纹产生的部位，能够抑制在半导体元件4的周边部位等不希望的部位以及方向产生裂纹。
其结果，能够抑制半导体元件4的破裂等，能够提高冷热环境下的半导体装置的可靠性以及寿命。另外，不需要对封装树脂6进行特别的特性调整以及在金属电极5的端面追加以缓和应力为目的的涂层等，能够抑制成本上升。并且，金属电极5能够通过冲压加工而形成，该冲压加工能够通过变更级进模具的工作台的设计而容易地变更加工对象的形状，因此能够抑制产品的追加成本。此外，仅对可靠性所需的最小限度的部位采取以上那样的对策就足够，不需要严格地管理有可能影响可靠性的树脂物性、组装工序中的设计参数，因此还能够期待管理成本上升的抑制、不合格率的抑制。
此外，上述的半导体元件4可以由硅(Si)构成，也可以由碳化硅(SiC)以及氮化镓(GaN)等宽带隙半导体构成。特别是，由于宽带隙半导体具有耐高温性，因此在半导体装置的半导体元件4由宽带隙半导体构成的结构中，如上所述地提高冷热环境下的可靠性的效果特别有效。另外，半导体元件4例如也可以是MOSFET、IGBT、SBD、PN二极管等。
＜实施方式2＞
图3是表示本发明的实施方式2所涉及的半导体装置的概略结构的剖面图。下面，针对本实施方式2所涉及的结构要素中与以上的结构要素相同或者类似的结构要素标注相同的参照标号，主要对不同的结构要素进行说明。
图3的半导体装置具有基座板1、绝缘基板2、焊料3a、3b、半导体元件4、金属电极5、作为树脂的封装树脂6以及作为电路要素的导线9。
导线9例如是铝线，与半导体元件4连接。金属电极5配置于导线9的侧方且位于半导体元件4的上方，经由半导体元件4以及焊料3b与导线9电连接。
电子电路7是包含基座板1、绝缘基板2、焊料3a、3b、半导体元件4以及导线9的电路，该电子电路7与金属电极5直接连接。封装树脂6对电子电路7和金属电极5进行封装。
在本实施方式2中，金属电极5的与导线9相对侧的相反侧的部分即侧部5c具有锐角形状，金属电极5的与导线9相对的部分即侧部5d具有圆弧形状即R形状。此外，侧部5d也可以是C倒角形状，或者是如后述的实施方式3那样通过冲压时的弯曲加工而造型的大致R形状。另外，在图3中，侧部5c的厚度方向的中央部具有锐角形状，但也可以如实施方式1(图2)那样，金属电极5的上表面的端缘部分具有锐角形状。
<实施方式2的总结>
根据如上所述的本实施方式2所涉及的半导体装置，与实施方式1同样地，能够优先产生以侧部5c为起点的距导线9比较远的裂纹8。因此，能够抑制在导线9的周围部位等不希望的位置产生裂纹。其结果，能够抑制导线9的断线，能够提高半导体装置的可靠性以及寿命。
＜实施方式3＞
图4是表示本发明的实施方式3所涉及的半导体装置的概略结构的剖面图。下面，针对本实施方式3所涉及的结构要素中与以上的结构要素相同或者类似的结构要素标注相同的参照标号，主要对不同的结构要素进行说明。
就图4的半导体装置而言，金属电极5的端部5e侧的部分(端部5e附近的部分)具有向上方弯折的形状。即，金属电极5的端部5e附近的部分具有向上方***的形状。由此，下侧的端缘部分5b具有通过冲压时的弯曲加工而造型的大致R形状。此外，以上的形状例如能够通过利用冲压将平板的金属电极弯折而形成。但是，并不限于此，上述形状也可以通过切削加工等机械加工使金属电极的中央部5f变薄而形成。
<实施方式3的总结>
根据以上那样的本实施方式3所涉及的半导体装置，与实施方式1相比，能够使容易产生裂纹8的上侧的端缘部分5a远离半导体元件4，因此能够更有效地控制裂纹产生的部位，能够进一步提高半导体装置的可靠性以及寿命。另外，通常，由于在焊接工序等产品组装时产生的应力，有时会产生妨碍金属电极5的图4的进深方向的延伸的弯曲应力。与此相对，根据本实施方式3，通过图4的形状，能够提高针对该弯曲应力的强度，因此能够抑制金属电极5的变形，能够提高产品品质。
＜实施方式4＞
图5是表示本发明的实施方式4所涉及的半导体装置的金属电极5的概略结构的平面图。下面，针对本实施方式4所涉及的结构要素中与以上的结构要素相同或者类似的结构要素标注相同的参照标号，主要对不同的结构要素进行说明。
如图5所示，在本实施方式4中，金属电极5具有凸起部5g，在除了凸起部5g的前端朝向的方向以外的方向配置有包含半导体元件4以及导线9的电子电路7。此外，在图5中，凸起部5g的形状是大致三角形，但也可以是箭头形状等。另外，在图5中，凸起部5g的前端朝向金属电极5的平面方向，在俯视观察时，在夹着半导体元件4以及导线9的位置分别设置有凸起部5g，但不限于此。例如，凸起部5g只要设置于希望优先产生裂纹8的部位即可。
<实施方式4的总结>
根据以上那样的本实施方式4，能够更有效地控制产生裂纹的部位。另外，能够使裂纹的产生分散，能够减小各裂纹的尺寸。
＜实施方式5＞
图6是表示本发明的实施方式5所涉及的半导体装置的金属电极5的概略结构的剖面图。下面，针对本实施方式5所涉及的结构要素中与以上的结构要素相同或者类似的结构要素标注相同的参照标号，主要对不同的结构要素进行说明。
如图6所示，在本实施方式5中，金属电极5相对于半导体元件4倾斜，以使得金属电极5的与导线9相对侧的相反侧的部分即侧部5c比金属电极5的与导线9相对的部分即侧部5d更靠近半导体元件4。
<实施方式5的总结>
金属电极5的靠近半导体元件4的侧部5c受到金属电极5与半导体元件4的线膨胀系数之差的影响比较大，金属电极5的远离半导体元件4的侧部5d受到金属电极5与半导体元件4的线膨胀系数之差的影响比较小。因此，封装树脂6从金属电极5的侧部5c承受的应力大于封装树脂6从金属电极5的侧部5d承受的应力，因此能够优先产生以侧部5c为起点的距导线9比较远的裂纹8。因此，能够有效地控制产生裂纹的部位。
此外，以上说明了将本实施方式5应用于实施方式2的结构，但也可以应用于除此之外的实施方式1、3、4等，如图7所示，也可以应用于关联半导体装置。
＜实施方式6＞
本发明的实施方式6所涉及的电力转换装置是具有主转换电路的电力转换装置，该主转换电路具有实施方式1至5中任一个所涉及的半导体装置。以上说明的半导体装置并不限定于特定的电力转换装置，下面，作为本实施方式6，对在三相的逆变器中应用了实施方式1至5中任一个所涉及的半导体装置的情况进行说明。
图8是表示电力转换***的结构的框图，该电力转换***应用了本实施方式6所涉及的电力转换装置。
图8所示的电力转换***由电源100、电力转换装置200、负载300构成。电源100是直流电源，向电力转换装置200供给直流电力。电源100能够由各种电源构成，例如，可以由直流***、太阳能电池、蓄电池构成，也可以由与交流***连接的整流电路、AC/DC转换器构成。另外，电源100也可以由将从直流***输出的直流电力转换为规定的电力的DC/DC转换器构成。
电力转换装置200是连接于电源100与负载300之间的三相的逆变器，将从电源100供给的直流电力转换为交流电力，向负载300供给交流电力。如图8所示，电力转换装置200具有：主转换电路201，其将直流电力转换为交流电力而输出；以及控制电路203，其将对主转换电路201进行控制的控制信号输出至主转换电路201。
负载300是由从电力转换装置200供给的交流电力进行驱动的三相的电动机。此外，负载300不限于特定的用途，是搭载于各种电气设备的电动机，例如，用作面向混合动力汽车、电动汽车、铁路车辆、电梯或者空调设备的电动机。
下面，对电力转换装置200的详情进行说明。主转换电路201具有开关元件和续流二极管(未图示)，通过开关元件的通断，将从电源100供给的直流电力转换为交流电力，向负载300供给。主转换电路201的具体电路结构有各种结构，本实施方式6所涉及的主转换电路201是2电平的三相全桥电路，能够由6个开关元件和与各个开关元件反向并联的6个续流二极管构成。主转换电路201的各开关元件以及各续流二极管的至少任意一个由应用了上述实施方式1至5的任一个所涉及的半导体装置的半导体模块202构成。6个开关元件两个两个地串联连接而构成上下桥臂，各上下桥臂构成全桥电路的各相(U相、V相、W相)。而且，各上下桥臂的输出端子即主转换电路201的3个输出端子与负载300连接。
另外，主转换电路201具有驱动各开关元件的驱动电路(未图示)，但驱动电路可以内置于半导体模块202，也可以是与半导体模块202分开地具有驱动电路的结构。驱动电路生成对主转换电路201的开关元件进行驱动的驱动信号，供给至主转换电路201的开关元件的控制电极。具体而言，驱动电路按照来自后述的控制电路203的控制信号，将使开关元件成为导通状态的驱动信号和使开关元件成为截止状态的驱动信号输出至各开关元件的控制电极。在将开关元件维持为导通状态的情况下，驱动信号是大于或等于开关元件的阈值电压的电压信号(导通信号)，在将开关元件维持为截止状态的情况下，驱动信号是小于或等于开关元件的阈值电压的电压信号(截止信号)。
控制电路203对主转换电路201的开关元件进行控制，以向负载300供给期望的电力。具体地，控制电路203基于应向负载300供给的电力计算主转换电路201的各开关元件应成为导通状态的时间(导通时间)。例如，控制电路203能够通过与应输出的电压相应地对开关元件的导通时间进行调制的PWM(Pulse Width Modulation)控制来控制主转换电路201。然后，控制电路203向主转换电路201具有的驱动电路输出控制指令(控制信号)，以在各时间点向应成为导通状态的开关元件输出导通信号，向应成为截止状态的开关元件输出截止信号。驱动电路按照该控制信号，向各开关元件的控制电极输出导通信号或者截止信号作为驱动信号。
在以上的本实施方式6所涉及的电力转换装置中，应用实施方式1至5所涉及的半导体装置作为主转换电路201的开关元件以及续流二极管的至少任意一个，因此，能够抑制在树脂的不希望的部分产生裂纹。
在以上说明的本实施方式6中，说明了在2电平的三相逆变器中应用实施方式1至5中任一个所涉及的半导体装置的例子，但本实施方式6并不限定于此，能够应用于各种电力转换装置。在本实施方式6中，实施方式1至5的任一个所涉及的半导体装置设为2电平的电力转换装置，但也可以是3电平、多电平的电力转换装置，在向单相负载供给电力的情况下，也可以将上述半导体装置应用于单相的逆变器。另外，在向直流负载等供给电力的情况下，也能够将上述半导体装置应用于DC/DC转换器、AC/DC转换器。
另外，本实施方式6所涉及的电力转换装置不限定于上述负载为电动机的情况，例如，也能够用作放电加工机、激光加工机、或者感应加热烹调器、非接触器供电***的电源装置，还能够用作太阳能发电***、蓄电***等的功率调节器。
此外，本发明在其发明的范围内，能够自由地对各实施方式进行组合，或者适当地对各实施方式进行变形、省略。
虽然详细地说明了本发明，但上述说明在所有的方面都是例示，本发明并不限定于此。可以理解为在不脱离本发明的范围的情况下能够想到未例示的无数变形例。
标号的说明
4半导体元件，5金属电极，5a、5b端缘部分，5c、5d侧部，5e端部，5g凸起部，6封装树脂，7电子电路，9导线。

Claims (8)

1.一种半导体装置，其具有：
电子电路，其包含半导体元件；
金属电极，其与所述电子电路直接连接；以及
树脂，其对所述电子电路和所述金属电极进行封装，
所述金属电极的与所述电子电路相对侧的相反侧的面的端缘部分具有锐角形状，所述金属电极的与所述电子电路相对的面的端缘部分具有圆弧形状或者钝角形状，
所述金属电极具有在所述金属电极的上表面、下表面及所述金属电极的延伸方向的两端面之外的侧部设置的凸起部，
在除了所述凸起部的前端朝向的方向以外的方向配置有所述电子电路。
2.根据权利要求1所述的半导体装置，其中，
所述金属电极的端部侧的部分具有向上方弯折的形状。
3.一种半导体装置，其具有：
电子电路，其包含半导体元件以及电路要素；
金属电极，其与所述电子电路直接连接；以及
树脂，其对所述电子电路和所述金属电极进行封装，
所述金属电极的与所述电路要素相对侧的相反侧的部分具有锐角形状，所述金属电极的与所述电路要素相对的部分具有圆弧形状或者钝角形状，
所述电路要素包含导线。
4.一种半导体装置，其具有：
电子电路，其包含半导体元件以及电路要素；
金属电极，其与所述电子电路直接连接；以及
树脂，其对所述电子电路和所述金属电极进行封装，
所述金属电极的与所述电路要素相对侧的相反侧的部分具有锐角形状，所述金属电极的与所述电路要素相对的部分具有圆弧形状或者钝角形状，
所述金属电极具有在所述金属电极的上表面、下表面及所述金属电极的延伸方向的两端面之外的侧部设置的凸起部，
在除了所述凸起部的前端朝向的方向以外的方向配置有所述电子电路。
5.一种半导体装置，其具有：
电子电路，其包含半导体元件以及电路要素；
金属电极，其与所述电子电路直接连接；以及
树脂，其对所述电子电路和所述金属电极进行封装，
所述金属电极的与所述电路要素相对侧的相反侧的第1端部具有锐角形状，所述金属电极的与所述电路要素相对的第2端部具有圆弧形状或者钝角形状，
所述金属电极配置于所述电路要素的侧方且位于所述半导体元件的上方，
所述金属电极相对于所述半导体元件倾斜，以使得所述金属电极的与所述电路要素相对侧的相反侧的所述第1端部比所述金属电极的与所述电路要素相对的所述第2端部更靠近所述半导体元件，
所述第1端部与所述树脂接触。
6.根据权利要求1至5中任一项所述的半导体装置，其中，
所述半导体元件包含宽带隙半导体。
7.一种半导体装置，其使用半导体元件，
该半导体装置具有：
电子电路，其包含所述半导体元件以及电路要素；
金属电极，其与所述电子电路直接连接，配置于所述电子电路的侧方且位于所述半导体元件的上方；以及
树脂，其对所述电子电路和所述金属电极进行封装，
所述金属电极相对于所述半导体元件倾斜，以使得所述金属电极的与所述电路要素相对侧的相反侧的第1端部比所述金属电极的与所述电路要素相对的第2端部更靠近所述半导体元件，
所述第1端部与所述树脂接触，
所述第1端部处的所述金属电极与所述半导体元件的线膨胀系数之差的影响比所述第2端部处的所述金属电极与所述半导体元件的线膨胀系数之差的影响大。
8.一种电力转换装置，其具有：
主转换电路，其具有权利要求1至5中任一项所述的半导体装置，该主转换电路对被输入进来的电力进行转换而输出；以及
控制电路，其将控制所述主转换电路的控制信号输出至所述主转换电路。
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