CN106067800A - NMOS tube high voltage high-speed driving circuit - Google Patents
NMOS tube high voltage high-speed driving circuit Download PDFInfo
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- CN106067800A CN106067800A CN201610512303.0A CN201610512303A CN106067800A CN 106067800 A CN106067800 A CN 106067800A CN 201610512303 A CN201610512303 A CN 201610512303A CN 106067800 A CN106067800 A CN 106067800A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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Abstract
The invention discloses a kind of NMOS tube high voltage high-speed driving circuit.Including input protection rectification circuit, drive main circuit and main loop circuit.Input protection rectification circuit is by TVS pipe or bi-directional voltage stabilizing diode, four commutation diode compositions；Main circuit is driven to be changed audion Q1 by PNP, PNP release audion Q2, NPN amplifying triode Q3 (removable), current-limiting resistance R1, release resistance R2, divider resistance R3, divider resistance R4, current-limiting resistance R5, release resistance R6 (removable), rapidly switch off electric capacity C1, shunt diode D6, Zener diode D8 (removable)；Main loop circuit is made up of NMOS tube M1, sustained diode 7 and load L1.The present invention is that a kind of power consumption is little, low cost, and it is big to bear input voltage range, the drive circuit that switching speed is fast.
Description
Technical field
The present invention relates to NMOS tube drive circuit, especially relate to a kind of NMOS tube high voltage high-speed driving circuit.
Background technology
NMOS tube is owing to its input resistance is high, voltage driven type (between grid and source electrode, can lead higher than certain value by voltage
Logical), noise is little, low in energy consumption, dynamic range big, be easily integrated, do not have secondary-breakdown phenomenon, safety operation area field width, thermally-stabilised
Property the advantage such as good, the widest sending out is applied to electron trade, but because of the restriction of its manufacturing process, can three pins of NMOS tube it
Between produce parasitic capacitance, and parasitic capacitance can cause NMOS tube conducting to turn off slack-off, thus adds the switching loss of NMOS tube,
It is thus desirable to the impact that the circuit parasitic capacitance to be reduced of an energy high-speed driving NMOS tube is on switch metal-oxide-semiconductor.Presently, there are
NMOS tube drive circuit, has the disadvantage in that (1) power consumption is big, and cost is high.(2) input voltage amplitude range can be born little.(3)
Switching speed is slow.
Summary of the invention
In order to overcome, traditional NMOS tube drive circuit power consumption is big, cost is high, can bear input voltage amplitude range little, open
Close the shortcomings such as speed is slow, it is an object of the invention to provide a kind of NMOS tube high voltage high-speed driving circuit, be a kind of power consumption little,
Low cost, can bear input voltage range greatly, the drive circuit that switching speed is fast.
In order to achieve the above object, the technical solution used in the present invention is:
The present invention includes input protection rectification circuit, drives main circuit and main loop circuit；Input protection rectification circuit, including whole
Flowing four diode D2～D5 and two-way TVS pipe or bi-directional voltage stabilizing diode D1, main loop circuit, including NMOS tube M1, two poles
Pipe D7 and load L1, input protection rectification circuit is to driving main circuit and main loop circuit for unidirectional current.
Described driving main circuit, including audion Q1～Q3, resistance R1～R6, electric capacity C1, diode D6 and voltage stabilizing two pole
Pipe D8；The colelctor electrode of audion Q1 is divided into two-way after resistance R4 and resistance R3 meets the two ends shunt capacitance C1 of GND, resistance R1,
One tunnel connects the base stage of audion Q1, and another road connects the emitter stage of audion Q1, the colelctor electrode of audion Q3 respectively through resistance R2, bears
The negative pole of one end and diode D7 of carrying L1 is followed by two ends parallel resistance R3 of VCC, Zener diode D8, Zener diode D8's
One end of negative pole connecting resistance R6 and the base stage of audion Q3, another termination emitter stage of audion Q3, the diode D6 of resistance R6
Positive pole, the base stage of audion Q2 and one end of resistance R5, another termination colelctor electrode of audion Q2 and NMOS tube of resistance R5
The source electrode of M1 is followed by GND, and the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1.
Described driving main circuit, including audion Q1～Q3, resistance R1～R6, electric capacity C1 and diode D6；Audion Q1
Colelctor electrode after resistance R4 and resistance R3 meets the two ends shunt capacitance C1 of GND, resistance R1, be divided into two-way, a road meets audion Q1
Base stage, another road through resistance R2 connect respectively the emitter stage of audion Q1, the colelctor electrode of audion Q3, load L1 one end and two
The negative pole of pole pipe D7 is followed by VCC, resistance R3 and one end of resistance R4 junction point connecting resistance R6 and the base stage of audion Q3, resistance R6
Another termination emitter stage of audion Q3, the positive pole of diode D6, the base stage of audion Q2 and one end of resistance R5, resistance R5
Another termination colelctor electrode of audion Q2 and the source electrode of NMOS tube M1 be followed by GND, the negative pole of diode D6 connects audion Q2's
Emitter stage and the grid of NMOS tube M1.
Described driving main circuit, including audion Q1～Q2, resistance R1～R4, electric capacity C1, diode D6 and voltage stabilizing two pole
Pipe D8；The colelctor electrode of audion Q1 is divided into two-way after resistance R4 and resistance R3 meets the two ends shunt capacitance C1 of GND, resistance R1,
One tunnel connects the base stage of audion Q1, and another road connects the emitter stage of audion Q1, one end of load L1 and two poles respectively through resistance R2
The negative pole of pipe D7 is followed by two ends parallel resistance R3 of VCC, Zener diode D8, and the negative pole of Zener diode D8 connects audion respectively
The base stage of Q2 and the positive pole of diode D6, the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1 respectively
Pole, the colelctor electrode of audion Q2 connects the source electrode of NMOS tube M1 and is followed by GND.
Described driving main circuit, including audion Q1～Q2, resistance R1～R4, electric capacity C1 and diode D6；Audion Q1
The colelctor electrode two ends shunt capacitance C1 that meets GND, resistance R1 through resistance R4 and resistance R3 be divided into two-way, a road connects audion Q1's
Base stage, another road negative pole through one end and diode D7 that resistance R2 meets load L1 respectively is followed by VCC, resistance R3 and resistance R4 even
Contact connects base stage and the positive pole of diode D6 of audion Q2 respectively, and the negative pole of diode D6 connects the emitter stage of audion Q2 respectively
With the grid of NMOS tube M1, the colelctor electrode of audion Q2 connects the source electrode of NMOS tube M1 and is followed by GND.
The input signal of described input protection rectification circuit is direct current signal or AC signal, and the magnitude of voltage of direct current signal is
2-1000V；The voltage of AC signal is effectively 2-1000V, and frequency is 50Hz or 60Hz；The input class of described driving main circuit
Like square-wave signal by above-mentioned direct current signal or AC signal and high level signal be 0V, low level signal be-2V--15V,
Frequency is that the square-wave signal of 100-40000Hz is formed by stacking.
The invention have the advantages that:
Operating power consumption of the present invention is little, only the 50% of common driver circuit power consumption；Low cost, only common driver circuit price
20%；The present invention can regulate resistance parameter and drive NMOS tube according to the voltage magnitude of power supply, it is not necessary to beyond power supply
Additional power supply power, and the voltage range that can bear big (2-1000V), and common driver circuit is required for extra power supply and supplies
Electricity, and voltage range little (tens volts) can be born;The present invention drives NMOS tube speed fast, can reach 100k, and only commonly drives
50k can be reached.
Accompanying drawing explanation
Fig. 1 is NMOS tube high voltage high-speed driving circuit.
Fig. 2 is NMOS tube high voltage high-speed driving circuit (removes and drive main circuit Zener diode).
Fig. 3 is NMOS tube high voltage high-speed driving circuit (removes and drive one of them audion of main circuit).
Fig. 4 is that NMOS tube high voltage high-speed driving circuit (is removed and driven main circuit Zener diode and one of them two pole
Pipe).
Fig. 5 be NMOS tube high voltage high-speed driving circuit typical application circuit (circuit input 220V ac supply signal and
Class square wave driving signal).
Fig. 6 is input protection rectification circuit.
Fig. 7 is to drive main circuit.
Fig. 8 is main loop circuit.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
As shown in Fig. 1, Fig. 6～Fig. 8, the present invention includes input protection rectification circuit, drives main circuit and main loop circuit；
Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing diode D1, leads back
Road circuit, including NMOS tube M1, diode D7 and load L1, input protection rectification circuit is to driving main circuit and main loop circuit
For unidirectional current.
As shown in Figure 1 and Figure 5, it is NMOS tube high voltage high-speed driving circuit and the circuit typical application circuit of the present invention,
As it is shown in fig. 7, be the driving main circuit of the present invention.Described driving main circuit, including audion Q1～Q3, resistance R1～R6, electricity
Hold C1, diode D6 and Zener diode D8；The colelctor electrode of audion Q1 meets GND through resistance R4 and R3, and the two ends of resistance R1 are also
Connection electric capacity C1 be divided into two-way, a road connects the base stage of audion Q1, another road through resistance R2 connect respectively the emitter stage of audion Q1, three
The negative pole of the colelctor electrode of pole pipe Q3, one end of load L1 and diode D7 is followed by the two ends parallel resistance of VCC, Zener diode D8
One end of the negative pole connecting resistance R6 of R3, Zener diode D8 and the base stage of audion Q3, another termination audion Q3 of resistance R6
Emitter stage, the positive pole of diode D6, the base stage of audion Q2 and one end of resistance R5, resistance R5 another termination audion Q2
Colelctor electrode, the source electrode of NMOS tube M1 be followed by GND, the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1
Pole.
As in figure 2 it is shown, be NMOS tube high voltage high-speed driving circuit (remove drive main circuit Zener diode), described in drive
Dynamic main circuit, including audion Q1～Q3, resistance R1～R6, electric capacity C1 and diode D6；The colelctor electrode of audion Q1 is through resistance
R4 and R3 meets the two ends shunt capacitance C1 of GND, resistance R1 and is divided into two-way, and a road connects the base stage of audion Q1, and another road is through resistance
R2 connects the negative pole of the emitter stage of audion Q1, the colelctor electrode of audion Q3, one end of load L1 and diode D7 respectively and is followed by
One end of VCC, resistance R3 and R4 junction point connecting resistance R6 and the base stage of audion Q3, another termination audion Q3's of resistance R6
Emitter stage, the positive pole of diode D6, the base stage of audion Q2 and one end of resistance R5, another termination audion Q2's of resistance R5
Colelctor electrode, the source electrode of NMOS tube M1 are followed by GND, and the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1
Pole.
As it is shown on figure 3, be NMOS tube high voltage high-speed driving circuit (remove and drive one of them audion of main circuit), institute
State driving main circuit, including audion Q1～Q2, resistance R1～R4, electric capacity C1, diode D6 and Zener diode D8；Audion
The two ends shunt capacitance C1 that the colelctor electrode of Q1 meets GND, resistance R1 through resistance R4 and R3 is divided into two-way, and a road connects the base of audion Q1
Pole, the negative pole that another road meets the emitter stage of audion Q1, one end of load L1 and diode D7 respectively through resistance R2 is followed by VCC,
Two ends parallel resistance R3 of Zener diode D8, the negative pole of Zener diode D8 meets base stage and the diode D6 of audion Q2 respectively
Positive pole, the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1, the colelctor electrode of audion Q2 respectively
The source electrode connecing NMOS tube M1 is followed by GND.
As shown in Figure 4, it is that NMOS tube high voltage high-speed driving circuit (is removed and driven main circuit Zener diode and wherein
Individual diode), described driving main circuit, including audion Q1～Q2, resistance R1～R4, electric capacity C1 and diode D6；Audion
The two ends shunt capacitance C1 that the colelctor electrode of Q1 meets GND, resistance R1 through resistance R4 and R3 is divided into two-way, and a road connects the base of audion Q1
Pole, another road connects the negative pole of load one end of L1 and diode D7 respectively through resistance R2 and is followed by VCC, resistance R3 and R4 junction point divides
Not connecing base stage and the positive pole of diode D6 of audion Q2, the negative pole of diode D6 meets emitter stage and the NMOS of audion Q2 respectively
The grid of pipe M1, the colelctor electrode of audion Q2 connects the source electrode of NMOS tube M1 and is followed by GND.
The input signal of described input protection rectification circuit is direct current signal or AC signal, and the magnitude of voltage of direct current signal is
2-1000V；The voltage of AC signal is effectively 2-1000V, and frequency is 50Hz or 60Hz；The input class of described driving main circuit
Like square-wave signal by above-mentioned direct current signal or AC signal and high level signal be 0V, low level signal be-2V--15V,
Frequency is that the square-wave signal of 100-40000Hz is formed by stacking.
The input protection rectification circuit of the present invention is managed by D1(TVS or bi-directional voltage stabilizing diode), D2, D3, D4, D5(are whole
Stream diode) composition.By Q1 (PNP changes audion), Q2 (PNP discharges audion), Q3, (NPN amplifies described driving main circuit
Audion (removable)), R1 (current-limiting resistance), R2 (release resistance), R3 (divider resistance), R4 (divider resistance), R5 (current limliting electricity
Resistance), R6 (release resistance (removable)), C1 (rapidly switching off resistance), D6 (shunt diode), (Zener diode (can go D8
Remove)).Described main loop circuit is made up of M1 (NMOS tube), D7 (fly-wheel diode) and L1 (load).
Drive the amplifying triode in main circuit to be applied to open NMOS tube immediate current for amplification, shorten NMOS tube and lead
The logical time, and for some occasion, it is not necessary to amplifying triode amplifies electric current, also can meet NMOS tube ON time requirement, because of
This removable amplifying triode.Zener diode in described driving main circuit is used for providing overvoltage protection, and for some electricity
Pressure stablizes removable Zener diode.
Input protection rectification circuit provides the protection to control circuit and the rectification to input signal.Driving main circuit provides
Open needed for NMOS tube moment electric current and turn off NMOS tube moment required release electric charge provide loop (NMOS tube grid and source electrode it
Between there is parasitic capacitance, and the driving of metal-oxide-semiconductor, be actually the discharge and recharge to electric capacity.Charging to electric capacity needs an electricity
Stream, because can regard short circuit as electric capacity, so immediate current can be bigger to electric capacity charging transient.And electric capacity electric discharge is just needed
Want a loop, quickly electric charge on electric capacity is discharged).Main loop circuit provides and drives load capacity.
Shown in Fig. 5, the working method of typical application circuit explanation control circuit.
Inputting frequency 50Hz between Vin+ and Vin-in Figure 5, voltage effective value is that the alternating voltage of 220V swashs
Encouraging, pumping signal changes into, through input protection rectification circuit, the full-wave direct current signal (voltage that voltage effective value is 220V
Direct current biasing component is zero), driving main circuit Input end one similar square-wave signal of input, (square-wave signal is by Vin+ simultaneously
It is 0V, low with Vin-two ends input signal gained full-wave direct current signal and high level signal after bridge rectifier rectification
The square-wave signal that level signal is-15V, frequency is 20000Hz is formed by stacking), when the similar square-wave signal of input is low level,
Now at VCC, level is higher than resistance R2 and resistance R3 connection level, and resistance R2 and resistance R3 connection level is higher than
Level (i.e. there is voltage difference at electric capacity C1 two ends) at Input, the most now conversion triode ON is in saturation, the most above-mentioned whole
Stream gained 220V full-wave direct current signal loading is to above divider resistance, according to divider resistance resistance, and one of them divider resistance two
Terminal voltage be virtual value be the full-wave direct current signal of 14.47V, this signal is just loaded in the base stage amplified on diode, then
Amplifying triode is in magnifying state, the signal loading after simultaneously amplifying to shunt diode positive pole, and shunt diode
Cathode voltage is zero, then shunt diode conducting, the most now drives main circuit to parasitic capacitance between NMOS tube grid and source electrode
Charging, NMOS tube turns on rapidly, and it is essentially identical now to discharge voltage between three grades of pole pipe emitter stages and base stage, discharges diode
Cut-off.When the similar square-wave signal of input is high level, now at Input, level is identical with level at VCC, and electric capacity C1 two ends
Voltage can not suddenly change, and the most now resistance R2 is less than higher than level at level, i.e. VCC at Input with resistance R3 connection level
Resistance R2 and resistance R3 connection level, therefore conversion audion is turned off rapidly by the negative voltage between base stage and emitter stage,
Then conversion audion cut-off, now divider resistance both end voltage value is zero, and the base voltage therefore discharging audion is also zero, and
Now in the parasitic capacitance between NMOS tube grid and source electrode, voltage can not suddenly change, and therefore discharges the emitter voltage of audion not
Become, now discharge triode ON, by NMOS tube grid and source conduction, electric charge in parasitic capacitance is discharged, thus causes
NMOS tube turns off rapidly.
Above-mentioned detailed description of the invention is used for illustrating the present invention rather than limiting the invention, the present invention's
In spirit and scope of the claims, any modifications and changes that the present invention is made, both fall within the protection model of the present invention
Enclose.
Claims (6)
1. a NMOS tube high voltage high-speed driving circuit, it is characterised in that: include input protection rectification circuit, drive main circuit
And main loop circuit；Input protection rectification circuit, including four diode D2～D5 of rectification and two-way TVS pipe or bi-directional voltage stabilizing
Diode D1, main loop circuit, including NMOS tube M1, diode D7 and load L1, input protection rectification circuit is to driving main electricity
Road and main loop circuit are for unidirectional current.
A kind of NMOS tube high voltage high-speed driving circuit the most according to claim 1, it is characterised in that: the main electricity of described driving
Road, including audion Q1～Q3, resistance R1～R6, electric capacity C1, diode D6 and Zener diode D8；The colelctor electrode of audion Q1
Being divided into two-way after resistance R4 and resistance R3 meets the two ends shunt capacitance C1 of GND, resistance R1, a road connects the base stage of audion Q1,
Another road meets the emitter stage of audion Q1, the colelctor electrode of audion Q3, one end of load L1 and diode D7 respectively through resistance R2
Negative pole be followed by two ends parallel resistance R3 of VCC, Zener diode D8, one end of the negative pole connecting resistance R6 of Zener diode D8 and
The base stage of audion Q3, another termination emitter stage of audion Q3, the positive pole of diode D6, base stage of audion Q2 of resistance R6
With one end of resistance R5, the colelctor electrode of another termination audion Q2 and the source electrode of NMOS tube M1 of resistance R5 are followed by GND, diode
The negative pole of D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1.
A kind of NMOS tube high voltage high-speed driving circuit the most according to claim 1, it is characterised in that: the main electricity of described driving
Road, including audion Q1～Q3, resistance R1～R6, electric capacity C1 and diode D6；The colelctor electrode of audion Q1 is through resistance R4 and electricity
Resistance R3 is divided into two-way after meeting the two ends shunt capacitance C1 of GND, resistance R1, and a road connects the base stage of audion Q1, and another road is through resistance
R2 connects the negative pole of the emitter stage of audion Q1, the colelctor electrode of audion Q3, one end of load L1 and diode D7 respectively and is followed by
VCC, resistance R3 and one end of resistance R4 junction point connecting resistance R6 and the base stage of audion Q3, another termination audion of resistance R6
The emitter stage of Q3, the positive pole of diode D6, the base stage of audion Q2 and one end of resistance R5, another termination audion of resistance R5
The colelctor electrode of Q2 and the source electrode of NMOS tube M1 are followed by GND, and the negative pole of diode D6 connects emitter stage and NMOS tube M1 of audion Q2
Grid.
A kind of NMOS tube high voltage high-speed driving circuit the most according to claim 1, it is characterised in that: the main electricity of described driving
Road, including audion Q1～Q2, resistance R1～R4, electric capacity C1, diode D6 and Zener diode D8；The colelctor electrode of audion Q1
Being divided into two-way after resistance R4 and resistance R3 meets the two ends shunt capacitance C1 of GND, resistance R1, a road connects the base stage of audion Q1,
The negative pole that another road meets the emitter stage of audion Q1, one end of load L1 and diode D7 respectively through resistance R2 is followed by VCC, voltage stabilizing
Two ends parallel resistance R3 of diode D8, the negative pole of Zener diode D8 is just meeting the base stage of audion Q2 and diode D6 respectively
Pole, the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1 respectively, and the colelctor electrode of audion Q2 connects
The source electrode of NMOS tube M1 is followed by GND.
A kind of NMOS tube high voltage high-speed driving circuit the most according to claim 1, it is characterised in that: the main electricity of described driving
Road, including audion Q1～Q2, resistance R1～R4, electric capacity C1 and diode D6；The colelctor electrode of audion Q1 is through resistance R4 and electricity
Resistance R3 meets the two ends shunt capacitance C1 of GND, resistance R1 and is divided into two-way, and a road connects the base stage of audion Q1, and another road is through resistance R2
The negative pole of one end and diode D7 of meeting load L1 respectively is followed by VCC, resistance R3 and resistance R4 junction point meets audion Q2 respectively
Base stage and the positive pole of diode D6, the negative pole of diode D6 connects the emitter stage of audion Q2 and the grid of NMOS tube M1 respectively,
The colelctor electrode of audion Q2 connects the source electrode of NMOS tube M1 and is followed by GND.
6. according to a kind of NMOS tube high voltage high-speed driving circuit of any one described in claim 1-5, it is characterised in that:
The input signal of described input protection rectification circuit is direct current signal or AC signal, and the magnitude of voltage of direct current signal is 2-1000V；
The voltage of AC signal is effectively 2-1000V, and frequency is 50Hz or 60Hz；The input of described driving main circuit is similar to square wave letter
Number by above-mentioned direct current signal or AC signal and high level signal be 0V, low level signal be-2V--15V, frequency be
The square-wave signal of 100-40000Hz is formed by stacking.
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| CN201610512303.0A CN106067800A (en) | 2016-06-29 | 2016-06-29 | NMOS tube high voltage high-speed driving circuit |
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| CN201610512303.0A CN106067800A (en) | 2016-06-29 | 2016-06-29 | NMOS tube high voltage high-speed driving circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111030472A (en) * | 2019-12-26 | 2020-04-17 | 兰州空间技术物理研究所 | High-robustness self-starting isolation power supply circuit with adjustable output voltage |
| CN115800977A (en) * | 2023-02-08 | 2023-03-14 | 成都世源频控技术股份有限公司 | PMOS (P-channel metal oxide semiconductor) -based high-current high-speed power-on and power-off circuit and switching filter circuit for power supply thereof |
| CN117016965A (en) * | 2023-07-05 | 2023-11-10 | 湖南步升取暖科技股份有限公司 | Fault emergency safety protection heating tea table |
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| CN203374940U (en) * | 2013-08-06 | 2014-01-01 | 衢州昀睿工业设计有限公司 | Drive circuit of electromagnetic regulating valve |
| CN204316475U (en) * | 2014-03-18 | 2015-05-06 | 淄博舜泰电动汽车有限公司 | A kind of metal-oxide-semiconductor drive circuit |
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