CN207010638U - On-off circuit - Google Patents
On-off circuit Download PDFInfo
- Publication number
- CN207010638U CN207010638U CN201720613058.2U CN201720613058U CN207010638U CN 207010638 U CN207010638 U CN 207010638U CN 201720613058 U CN201720613058 U CN 201720613058U CN 207010638 U CN207010638 U CN 207010638U
- Authority
- CN
- China
- Prior art keywords
- oxide
- semiconductor
- metal
- triode
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 269
- 238000004146 energy storage Methods 0.000 claims abstract description 114
- 230000005611 electricity Effects 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 238000007600 charging Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000005669 field effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
Abstract
A kind of on-off circuit is the utility model is related to, including：First metal-oxide-semiconductor, the second metal-oxide-semiconductor, energy-storage travelling wave tube and switching device；The source electrode of first metal-oxide-semiconductor connects the grid of the first external power supply and the second metal-oxide-semiconductor, the grounded drain of first metal-oxide-semiconductor, the grid incoming control signal of first metal-oxide-semiconductor respectively；The source electrode of second metal-oxide-semiconductor connects the first external power supply, and the drain electrode of second metal-oxide-semiconductor connects the second external power supply；The energy-storage travelling wave tube is connected across between the source electrode and grid of second metal-oxide-semiconductor, and described switching device one end connects the source electrode of first metal-oxide-semiconductor, and the other end connects the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively.
Description
Technical field
On-off circuit technical field is the utility model is related to, more particularly to a kind of on-off circuit.
Background technology
Transistor switching circuit and MOS (Metal Oxide Semiconductor, metal oxide semiconductor field-effect
Transistor) on-off circuit is on-off circuit that two kinds of fields are seen.By taking MOS switch circuit as an example, Fig. 1 shows MOS switch circuit
A kind of form, including two metal-oxide-semiconductors.When control signal is high level, metal-oxide-semiconductor Q1 conductings, metal-oxide-semiconductor Q2 grid is pulled low, MOS
Pipe Q2 is turned on, so as to whole MOS switch circuit turn-on.However, during the above-mentioned uncontrollable metal-oxide-semiconductor Q2 of MOS switch circuit conducting
Between, so as to the ON time of uncontrollable whole on-off circuit.
In summary, the ON time of the uncontrollable whole on-off circuit of traditional on-off circuit.
Utility model content
Based on this, it is necessary to for uncontrollable whole on-off circuit ON time the problem of, there is provided one kind switch electricity
Road.
A kind of on-off circuit, including：
First metal-oxide-semiconductor, the second metal-oxide-semiconductor, energy-storage travelling wave tube and switching device；
The drain electrode of first metal-oxide-semiconductor connects the grid of the first external power supply and the second metal-oxide-semiconductor, the first MOS respectively
The source ground of pipe, the grid incoming control signal of first metal-oxide-semiconductor；
The source electrode of second metal-oxide-semiconductor connects the first external power supply, and the drain electrode of second metal-oxide-semiconductor connects the second external electricity
Source；
The energy-storage travelling wave tube is connected across between the source electrode and grid of second metal-oxide-semiconductor, switching device one end connection
The drain electrode of first metal-oxide-semiconductor, the other end connect the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively；
Wherein, first metal-oxide-semiconductor is N-channel MOS pipe, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
A kind of on-off circuit, first metal-oxide-semiconductor replace with the first triode；
The source electrode of first metal-oxide-semiconductor corresponds to the emitter stage of first triode, and the grid of first metal-oxide-semiconductor is corresponding
The base stage of first triode, the colelctor electrode of corresponding first triode of drain electrode of first metal-oxide-semiconductor；
Wherein, first triode is NPN type triode, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
A kind of on-off circuit, second metal-oxide-semiconductor replace with the second triode；
The source electrode of second metal-oxide-semiconductor corresponds to the emitter stage of second triode, and the grid of second metal-oxide-semiconductor is corresponding
The base stage of second triode, the colelctor electrode of corresponding second triode of drain electrode of second metal-oxide-semiconductor；
Wherein, second triode is NPN type triode.
A kind of on-off circuit, including：
First metal-oxide-semiconductor, the second metal-oxide-semiconductor, energy-storage travelling wave tube and switching device；
The source electrode of first metal-oxide-semiconductor connects the grid of the first external power supply and the second metal-oxide-semiconductor, the first MOS respectively
The grounded drain of pipe, the grid incoming control signal of first metal-oxide-semiconductor；
The source electrode of second metal-oxide-semiconductor connects the first external power supply, and the drain electrode of second metal-oxide-semiconductor connects the second external electricity
Source；
The energy-storage travelling wave tube is connected across between the source electrode and grid of second metal-oxide-semiconductor, switching device one end connection
The source electrode of first metal-oxide-semiconductor, the other end connect the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively；
Wherein, first metal-oxide-semiconductor is P-channel metal-oxide-semiconductor, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
A kind of on-off circuit, first metal-oxide-semiconductor replace with the first triode；
The source electrode of first metal-oxide-semiconductor corresponds to the emitter stage of first triode, and the grid of first metal-oxide-semiconductor is corresponding
The base stage of first triode, the colelctor electrode of corresponding first triode of drain electrode of first metal-oxide-semiconductor；
Wherein, first triode is PNP type triode, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
A kind of on-off circuit, second metal-oxide-semiconductor replace with the second triode；
The source electrode of second metal-oxide-semiconductor corresponds to the emitter stage of second triode, and the grid of second metal-oxide-semiconductor is corresponding
The base stage of second triode, the colelctor electrode of corresponding second triode of drain electrode of second metal-oxide-semiconductor；
Wherein, second triode is PNP type triode.
Said switching circuit, when control signal is high level, the first metal-oxide-semiconductor or the first triode ON, switching device
Disconnect, energy-storage travelling wave tube charging, the base level of the grid level of the second metal-oxide-semiconductor or the second triode rises is joined by energy-storage travelling wave tube
Numerical control system, so as to control the ON time of the second metal-oxide-semiconductor or the second triode, and then control the conducting of whole on-off circuit
Time.
Brief description of the drawings
Fig. 1 is the schematic diagram of conventional switch circuit；
Fig. 2 is the circuit diagram of the on-off circuit of first embodiment；
Fig. 3 is the circuit diagram of the on-off circuit of second embodiment；
Fig. 4 is the circuit diagram of the on-off circuit of 3rd embodiment；
Fig. 5 is the circuit diagram of the on-off circuit of fourth embodiment.
Embodiment
Embodiment of the present utility model is illustrated below in conjunction with the accompanying drawings.
First embodiment
As shown in Fig. 2 the on-off circuit of the present embodiment may include：
First metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, energy-storage travelling wave tube C1 and switching device D1；
The drain electrode of the first metal-oxide-semiconductor Q1 connects the first external power supply VCC and the second metal-oxide-semiconductor Q2 grid respectively, described
First metal-oxide-semiconductor Q1 source ground, the grid incoming control signal PWR-ON/OFF of the first metal-oxide-semiconductor Q1；
The source electrode of the second metal-oxide-semiconductor Q2 connects the first external power supply VCC, the second metal-oxide-semiconductor Q2 drain electrode connection the
Two external power supply VDD；
The energy-storage travelling wave tube C1 is connected across between the source electrode and grid of the second metal-oxide-semiconductor Q2, the switching device D1 mono-
End connects the drain electrode of the first metal-oxide-semiconductor Q1, and the other end connects the energy-storage travelling wave tube C1 and the second metal-oxide-semiconductor Q2 grid respectively
Pole.
Said switching circuit, when control signal PWR-ON/OFF is high level, the first metal-oxide-semiconductor conducting, switching device breaks
Open, energy-storage travelling wave tube charging, the grid level of the second metal-oxide-semiconductor rises the state modulator by energy-storage travelling wave tube, so as to control second
The ON time of metal-oxide-semiconductor, and then control the ON time of whole on-off circuit.
Further, the first metal-oxide-semiconductor Q1 drain electrode passes through first resistor R1 the first external power supplys of connection.Further,
The grid that first metal-oxide-semiconductor Q1 drain electrode passes through second resistance R2 the second metal-oxide-semiconductors of connection Q2.
As one embodiment, the second metal-oxide-semiconductor Q2 is P-channel metal-oxide-semiconductor, and the first metal-oxide-semiconductor Q1 can be N-channel MOS pipe,
It can be P-channel metal-oxide-semiconductor.Below using the first metal-oxide-semiconductor Q1 as N-channel MOS pipe, and the second metal-oxide-semiconductor Q2 be P-channel metal-oxide-semiconductor exemplified by,
The control logic of the on-off circuit of the present embodiment is illustrated.The operation principle of said switching circuit is as follows：Work as control signal
When PWR-ON/OFF is high level, the first metal-oxide-semiconductor Q1 conductings, switching device D1 is disconnected, and energy-storage travelling wave tube C1 is filled by second resistance
Electricity, the second metal-oxide-semiconductor Q2 grid level rise by energy-storage travelling wave tube C1 and second resistance R2 state modulator, so as to control the
Two metal-oxide-semiconductor Q2 ON time, and then control the ON time of whole on-off circuit.When control signal PWR-ON/OFF is low electricity
Usually, the first metal-oxide-semiconductor Q1 disconnects, and switching device D1 closures, energy-storage travelling wave tube C1, switching device D1 and first resistor R1 form electric discharge
Loop, energy-storage travelling wave tube C1 are discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second metal-oxide-semiconductor of quick lift Q2 grid voltage, can make second by discharge loop repid discharge
Metal-oxide-semiconductor Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device D1 can be with
Using diode, the anode of diode connects the first metal-oxide-semiconductor Q1 drain electrode, and the negative electrode of diode connects the energy-storage travelling wave tube respectively
C1 and the second metal-oxide-semiconductor Q2 grid.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second metal-oxide-semiconductor Q2 grid
The voltage of pole is drawn high so that the second metal-oxide-semiconductor Q2 is rapidly switched off, and the characteristic control of certain time length using the capacitor charge and discharge time be present
Make the second metal-oxide-semiconductor Q2 opening time.
In the case where the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 are P-channel metal-oxide-semiconductor, the source electrode of first metal-oxide-semiconductor
Connect the grid of the first external power supply and the second metal-oxide-semiconductor respectively, the grounded drain of first metal-oxide-semiconductor, first metal-oxide-semiconductor
Grid incoming control signal；The source electrode of second metal-oxide-semiconductor connects the first external power supply, the drain electrode connection of second metal-oxide-semiconductor
Second external power supply；The energy-storage travelling wave tube is connected across between the source electrode and grid of second metal-oxide-semiconductor, described switching device one end
The source electrode of first metal-oxide-semiconductor is connected, the other end connects the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively.
Further, the first metal-oxide-semiconductor Q1 source electrode passes through first resistor R1 the first external power supplys of connection.Further,
The grid that first metal-oxide-semiconductor Q1 source electrode passes through second resistance R2 the second metal-oxide-semiconductors of connection Q2.The operation principle of said switching circuit is such as
Under：When control signal PWR-ON/OFF is low level, the first metal-oxide-semiconductor Q1 conductings, switching device D1 disconnects, and energy-storage travelling wave tube C1 leads to
Second resistance charging is crossed, the second metal-oxide-semiconductor Q2 grid level rises by energy-storage travelling wave tube C1 and second resistance R2 state modulator, from
And the second metal-oxide-semiconductor Q2 ON time can be controlled, and then control the ON time of whole on-off circuit.As control signal PWR-
When ON/OFF is high level, the first metal-oxide-semiconductor Q1 disconnects, switching device D1 closures, energy-storage travelling wave tube C1, switching device D1 and the first electricity
Hinder R1 and form discharge loop, energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second metal-oxide-semiconductor of quick lift Q2 grid voltage, can make second by discharge loop repid discharge
Metal-oxide-semiconductor Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device D1 can be with
Using diode, the anode of diode connects the first metal-oxide-semiconductor Q1 source electrode, and the negative electrode of diode connects the energy-storage travelling wave tube respectively
C1 and the second metal-oxide-semiconductor Q2 grid.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second metal-oxide-semiconductor Q2 grid
The voltage of pole is drawn high so that the second metal-oxide-semiconductor Q2 is rapidly switched off, and the characteristic control of certain time length using the capacitor charge and discharge time be present
Make the second metal-oxide-semiconductor Q2 opening time.
In the above-described embodiments, it can be the amount for differing two or more orders of magnitude " to be much smaller than ", for example, the first electricity
Hinder R1 and can use 1K Ω, second resistance R2 can use 100K Ω.
In one embodiment, the grid of the first metal-oxide-semiconductor Q1 passes through 3rd resistor R3 incoming control signals PWR-ON/
OFF.GND represents ground wire in figure.
Second embodiment
As shown in figure 3, the on-off circuit of the present embodiment may include：
First triode Q1, the second triode Q2, energy-storage travelling wave tube C1 and switching device D1；
The colelctor electrode of the first triode Q1 connects the first external power supply VCC and the second triode Q2 base stage respectively,
The grounded emitter of the first triode Q1, the base stage incoming control signal PWR-ON/OFF of the first triode Q1；
The emitter stage of the second triode Q2 connects the first external power supply VCC, the colelctor electrode of the second triode Q2
Connect the second external power supply VDD；
The energy-storage travelling wave tube C1 is connected across between emitter stage and the base stage of the second triode Q2, the switching device D1
One end connects the colelctor electrode of the first triode Q1, and the other end connects the energy-storage travelling wave tube C1 and second triode respectively
Q2 base stage.
Said switching circuit, when control signal PWR-ON/OFF is high level, the first triode ON, switching device breaks
Open, energy-storage travelling wave tube charging, the base level of the second triode rises the state modulator by energy-storage travelling wave tube, so as to control second
The ON time of triode, and then control the ON time of whole on-off circuit.
Further, the first triode Q1 emitter stage passes through first resistor R1 the first external power supplys of connection.Further
Ground, the base stage that the first triode Q1 emitter stage passes through second resistance R2 the second triodes of connection Q2.
As one embodiment, the second triode Q2 is PNP type triode, and the first triode Q1 can be the pole of NPN type three
Pipe or PNP type triode.Below using the first triode Q1 as NPN type triode, and the second triode Q2 is positive-negative-positive
Exemplified by triode, the control logic of the on-off circuit of the present embodiment is illustrated.The operation principle of said switching circuit is as follows：
When control signal PWR-ON/OFF is high level, the first triode Q1 conductings, switching device D1 disconnects, and energy-storage travelling wave tube C1 passes through
Second resistance R2 charges, and the second triode Q2 base level rises by energy-storage travelling wave tube C1 and second resistance R2 state modulator,
So as to control the second triode Q2 ON time, and then control the ON time of whole on-off circuit.Work as control signal
When PWR-ON/OFF is low level, the first triode Q1 disconnect, switching device D1 closure, energy-storage travelling wave tube C1, switching device D1 and
First resistor R1 forms discharge loop, and energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second triode of quick lift Q2 base voltage, can make second by discharge loop repid discharge
Triode Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device can be adopted
With diode, the anode of diode connects the first triode Q1 colelctor electrode, and the negative electrode of diode connects the energy storage member respectively
Part C1 and the second triode Q2 base stage.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second triode
The voltage of Q2 base stages is drawn high so that the second triode Q2 is rapidly switched off, and certain time length be present using the capacitor charge and discharge time
The second triode of Characteristics Control Q2 opening time.
In the case where the first triode Q1 and the second triode Q2 are PNP type triode, first triode
Emitter stage connects the base stage of the first external power supply and the second triode respectively, and the grounded collector of first triode is described
The base stage incoming control signal of first triode；Emitter stage the first external power supply of connection of second triode, described second
The colelctor electrode of triode connects the second external power supply；The energy-storage travelling wave tube is connected across the emitter stage and base stage of second triode
Between, described switching device one end connects the emitter stage of first triode, the other end connect respectively the energy-storage travelling wave tube and
The base stage of second triode.
Further, the first triode Q1 emitter stage passes through first resistor R1 the first external power supplys of connection.Further
Ground, the base stage that the first triode Q1 emitter stage passes through second resistance R2 the second triodes of connection Q2.The work of said switching circuit
It is as follows to make principle：When control signal PWR-ON/OFF is low level, the first triode Q1 conductings, switching device D1 disconnects, storage
Energy element C1 is charged by second resistance, and the second triode Q2 base level rises by energy-storage travelling wave tube C1's and second resistance R2
State modulator, so as to control the second triode Q2 ON time, and then control the ON time of whole on-off circuit.When
When control signal PWR-ON/OFF is high level, the first triode Q1 disconnects, switching device D1 closures, energy-storage travelling wave tube C1, switch
Device D1 and first resistor R1 forms discharge loop, and energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second triode of quick lift Q2 base voltage, can make second by discharge loop repid discharge
Triode Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device D1 can be with
Using diode, the anode of diode connects the first triode Q1 emitter stage, and the negative electrode of diode connects the energy storage respectively
Element C1 and the second triode Q2 base stage.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the two or three pole
The voltage of pipe Q2 base stages is drawn high so that the second triode Q2 is rapidly switched off, and certain time length be present using the capacitor charge and discharge time
The second triode of Characteristics Control Q2 opening time.
In the above-described embodiments, it can be the amount for differing two or more orders of magnitude " to be much smaller than ", for example, the first electricity
Hinder R1 and can use 1K Ω, second resistance R2 can use 100K Ω.
In one embodiment, the base stage of the first triode Q1 passes through 3rd resistor R3 incoming control signals PWR-
ON/OFF.GND represents ground wire in figure.
3rd embodiment
As shown in figure 4, the on-off circuit of the present embodiment may include：
First metal-oxide-semiconductor Q1, the second triode Q2, energy-storage travelling wave tube C1 and switching device D1；
The drain electrode of the first metal-oxide-semiconductor Q1 connects the first external power supply VCC and the second triode Q2 base stage respectively, described
First metal-oxide-semiconductor Q1 source ground, the grid incoming control signal PWR-ON/OFF of the first metal-oxide-semiconductor Q1；
The emitter stage of the second triode Q2 connects the first external power supply VCC, the colelctor electrode of the second triode Q2
Connect the second external power supply VDD；
The energy-storage travelling wave tube C1 is connected across between emitter stage and the base stage of the second triode Q2, the switching device D1
One end connects the drain electrode of the first metal-oxide-semiconductor Q1, and the other end connects the energy-storage travelling wave tube C1 and the second triode Q2 respectively
Base stage.
Said switching circuit, when control signal PWR-ON/OFF is high level, the first metal-oxide-semiconductor Q1 conductings, switching device
D1 disconnects, and energy-storage travelling wave tube C1 chargings, the second triode Q2 base level rises the state modulator by energy-storage travelling wave tube C1, so as to
The second triode Q2 ON time is enough controlled, and then controls the ON time of whole on-off circuit.
Further, the first metal-oxide-semiconductor Q1 drain electrode passes through first resistor R1 the first external power supplys of connection.Further,
The base stage that first metal-oxide-semiconductor Q1 drain electrode passes through second resistance R2 the second triodes of connection Q2.
As one embodiment, the second triode Q2 is PNP type triode, and the first metal-oxide-semiconductor Q1 can be N-channel MOS pipe,
It can also be P-channel metal-oxide-semiconductor.Below using the first metal-oxide-semiconductor Q1 as N-channel MOS pipe, and the second triode Q2 is PNP type triode
Exemplified by, the control logic of the on-off circuit of the present embodiment is illustrated.The operation principle of said switching circuit is as follows：Work as control
When signal PWR-ON/OFF is high level, the first metal-oxide-semiconductor Q1 conductings, switching device D1 disconnects, and energy-storage travelling wave tube C1 passes through the second electricity
R2 chargings are hindered, the second triode Q2 base level rises by energy-storage travelling wave tube C1 and second resistance R2 state modulator, so as to
The second triode Q2 ON time is enough controlled, and then controls the ON time of whole on-off circuit.As control signal PWR-ON/
When OFF is low level, the first metal-oxide-semiconductor Q1 disconnects, switching device D1 closures, energy-storage travelling wave tube C1, switching device D1 and first resistor
R1 forms discharge loop, and energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second triode of quick lift Q2 base voltage, can make second by discharge loop repid discharge
Triode Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device D1 can be with
Using diode, the anode of diode connects the first metal-oxide-semiconductor Q1 drain electrode, and the negative electrode of diode connects the energy-storage travelling wave tube respectively
C1 and the second triode Q2 base stage.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second triode Q2
The voltage of base stage is drawn high so that the second triode Q2 is rapidly switched off, and the spy of certain time length using the capacitor charge and discharge time be present
Property control the second triode Q2 opening time.
It is P-channel metal-oxide-semiconductor in the first metal-oxide-semiconductor Q1, and in the case that the second triode Q2 is PNP type triode, described the
One metal-oxide-semiconductor Q1 source electrode connects the base stage of the first external power supply and the second triode respectively, and the drain electrode of the first metal-oxide-semiconductor Q1 connects
Ground, the grid incoming control signal of the first metal-oxide-semiconductor Q1；The emitter stage of the second triode Q2 connects the first external power supply
VCC, the second triode Q2 colelctor electrode connect the second external power supply VDD；The energy-storage travelling wave tube C1 is connected across described second
Between triode Q2 emitter stage and base stage, described switching device D1 one end connects the source electrode of the first metal-oxide-semiconductor Q1, the other end
The energy-storage travelling wave tube C1 and the second triode Q2 base stage are connected respectively.
Further, the first metal-oxide-semiconductor Q1 source electrode passes through first resistor R1 the first external power supplys of connection.Further,
The base stage that first metal-oxide-semiconductor Q1 source electrode passes through second resistance R2 the second triodes of connection Q2.The operation principle of said switching circuit
It is as follows：When control signal PWR-ON/OFF is low level, the first metal-oxide-semiconductor Q1 conductings, switching device D1 disconnects, energy-storage travelling wave tube C1
Charged by second resistance, the second triode Q2 base level rises the parameter control by energy-storage travelling wave tube C1 and second resistance R2
System, so as to control the second triode Q2 ON time, and then control the ON time of whole on-off circuit.When control is believed
When number PWR-ON/OFF is high level, the first metal-oxide-semiconductor Q1 disconnects, switching device D1 closures, energy-storage travelling wave tube C1, switching device D1 and
First resistor R1 forms discharge loop, and energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second triode of quick lift Q2 base voltage, can make second by discharge loop repid discharge
Triode Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device D1 can be with
Using diode, the anode of diode connects the first metal-oxide-semiconductor Q1 source electrode, and the negative electrode of diode connects the energy-storage travelling wave tube respectively
C1 and the second triode Q2 base stage.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second triode Q2
The voltage of base stage is drawn high so that the second triode Q2 is rapidly switched off, and the spy of certain time length using the capacitor charge and discharge time be present
Property control the second triode Q2 opening time.
In the above-described embodiments, it can be the amount for differing two or more orders of magnitude " to be much smaller than ", for example, the first electricity
Hinder R1 and can use 1K Ω, second resistance R2 can use 100K Ω.
In one embodiment, the grid of the first metal-oxide-semiconductor Q1 passes through 3rd resistor R3 incoming control signals PWR-ON/
OFF.GND represents ground wire in figure.
Fourth embodiment
As shown in figure 5, the on-off circuit of the present embodiment may include：
First triode Q1, the second metal-oxide-semiconductor Q2, energy-storage travelling wave tube C1 and switching device D1；
The colelctor electrode of the first triode Q1 connects the first external power supply VCC and the second metal-oxide-semiconductor Q2 grid, institute respectively
State the first triode Q1 grounded emitter, the base stage incoming control signal PWR-ON/OFF of the first triode Q1；
The source electrode of the second metal-oxide-semiconductor Q2 connects the first external power supply VCC, the second metal-oxide-semiconductor Q2 drain electrode connection the
Two external power supply VDD；
The energy-storage travelling wave tube C1 is connected across between the source electrode and grid of the second metal-oxide-semiconductor Q2, the switching device D1 mono-
End connects the colelctor electrode of the first triode Q1, and the other end connects the energy-storage travelling wave tube C1 and the second metal-oxide-semiconductor Q2 respectively
Grid.
Said switching circuit, when control signal PWR-ON/OFF is high level, the first triode Q1 conductings, switching device
D1 disconnects, and energy-storage travelling wave tube C1 chargings, the second metal-oxide-semiconductor Q2 grid level rises the state modulator by energy-storage travelling wave tube C1, so as to
The second metal-oxide-semiconductor Q2 ON time is enough controlled, and then controls the ON time of whole on-off circuit.
Further, the first triode Q1 emitter stage passes through first resistor R1 the first external power supplys of connection.Further
Ground, the grid that the first triode Q1 emitter stage passes through second resistance R2 the second metal-oxide-semiconductors of connection Q2.
As one embodiment, the second metal-oxide-semiconductor Q2 is P-channel metal-oxide-semiconductor, and the first triode Q1 can be NPN type triode,
It can also be PNP type triode.Below using the first triode Q1 as NPN type triode, and the second metal-oxide-semiconductor Q2 is P-channel metal-oxide-semiconductor
Exemplified by, the control logic of the on-off circuit of the present embodiment is illustrated.The operation principle of said switching circuit is as follows：Work as control
When signal PWR-ON/OFF is high level, the first triode Q1 conductings, switching device D1 disconnects, and energy-storage travelling wave tube C1 passes through the second electricity
R2 chargings are hindered, the second metal-oxide-semiconductor Q2 grid level rises by energy-storage travelling wave tube C1 and second resistance R2 state modulator, so as to
The second metal-oxide-semiconductor Q2 ON time is controlled, and then controls the ON time of whole on-off circuit.As control signal PWR-ON/OFF
For low level when, the first triode Q1 disconnect, switching device D1 closure, energy-storage travelling wave tube C1, switching device D1 and first resistor R1
Discharge loop is formed, energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second metal-oxide-semiconductor of quick lift Q2 grid voltage, can make second by discharge loop repid discharge
Metal-oxide-semiconductor Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device can be adopted
With diode, the anode of diode connects the first triode Q1 colelctor electrode, and the negative electrode of diode connects the energy storage member respectively
Part C1 and the second metal-oxide-semiconductor Q2 grid.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second metal-oxide-semiconductor Q2
The voltage of grid is drawn high so that the second metal-oxide-semiconductor Q2 is rapidly switched off, and the characteristic of certain time length using the capacitor charge and discharge time be present
Control the second metal-oxide-semiconductor Q2 opening time.
It is PNP type triode in the first triode Q1, and in the case that the second metal-oxide-semiconductor Q2 is P-channel metal-oxide-semiconductor, described the
The emitter stage of one triode connects the grid of the first external power supply and the second metal-oxide-semiconductor, the colelctor electrode of first triode respectively
Ground connection, the base stage incoming control signal of first triode；The source electrode of second metal-oxide-semiconductor connects the first external power supply, institute
The drain electrode for stating the second metal-oxide-semiconductor connects the second external power supply；The energy-storage travelling wave tube is connected across the source electrode and grid of second metal-oxide-semiconductor
Between, described switching device one end connects the emitter stage of first triode, the other end connect respectively the energy-storage travelling wave tube and
The grid of second metal-oxide-semiconductor.
Further, the first triode Q1 emitter stage passes through first resistor R1 the first external power supplys of connection.Further
Ground, the grid that the first triode Q1 emitter stage passes through second resistance R2 the second metal-oxide-semiconductors of connection Q2.The work of said switching circuit
Principle is as follows：When control signal PWR-ON/OFF is low level, the first triode Q1 conductings, switching device D1 disconnects, energy storage
Element C1 is charged by second resistance, and the second metal-oxide-semiconductor Q2 grid level rises is joined by energy-storage travelling wave tube C1 and second resistance R2
Numerical control system, so as to control the second metal-oxide-semiconductor Q2 ON time, and then control the ON time of whole on-off circuit.Work as control
When signal PWR-ON/OFF processed is high level, the first triode Q1 disconnects, switching device D1 closures, energy-storage travelling wave tube C1, switch dress
Put D1 and first resistor R1 and form discharge loop, energy-storage travelling wave tube C1 is discharged by the discharge loop.
In the conventional technology, the power down time of on-off circuit is longer.To solve the problem, in a further embodiment
In, first resistor R1 resistance can be arranged to the resistance much smaller than the second resistance R2, so, in shut-off on-off circuit
When, energy-storage travelling wave tube C1, so as to the second metal-oxide-semiconductor of quick lift Q2 grid voltage, can make second by discharge loop repid discharge
Triode Q2 is rapidly switched off, so that on-off circuit rapidly switches off.
In one embodiment, energy-storage travelling wave tube C1 can use electric capacity；In another embodiment, switching device D1 can be with
Using diode, the anode of diode connects the first triode Q1 emitter stage, and the negative electrode of diode connects the energy storage respectively
Element C1 and the second metal-oxide-semiconductor Q2 grid.The present embodiment can utilize diode D1 one-way conduction characteristic, accelerate the second metal-oxide-semiconductor
The voltage of Q2 base stages is drawn high so that the second metal-oxide-semiconductor Q2 is rapidly switched off, and the spy of certain time length using the capacitor charge and discharge time be present
Property control the second metal-oxide-semiconductor Q2 opening time.
In the above-described embodiments, it can be the amount for differing two or more orders of magnitude " to be much smaller than ", for example, the first electricity
Hinder R1 and can use 1K Ω, second resistance R2 can use 100K Ω.
In one embodiment, the base stage of the first triode Q1 passes through 3rd resistor R3 incoming control signals PWR-
ON/OFF.GND represents ground wire in figure.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Necessarily refer to identical embodiment or example.Moreover, specific features, structure, material or the feature of description can be any
One or more embodiments or example in combine in an appropriate manner.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and its description is more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent scope.It should be pointed out that the common skill for this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (12)
- A kind of 1. on-off circuit, it is characterised in that including：First metal-oxide-semiconductor, the second metal-oxide-semiconductor, energy-storage travelling wave tube and switching device；The drain electrode of first metal-oxide-semiconductor connects the grid of the first external power supply and the second metal-oxide-semiconductor respectively, first metal-oxide-semiconductor Source ground, the grid incoming control signal of first metal-oxide-semiconductor；The source electrode of second metal-oxide-semiconductor connects the first external power supply, and the drain electrode of second metal-oxide-semiconductor connects the second external power supply；The energy-storage travelling wave tube is connected across between the source electrode and grid of second metal-oxide-semiconductor, described in switching device one end connection The drain electrode of first metal-oxide-semiconductor, the other end connect the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively；Wherein, first metal-oxide-semiconductor is N-channel MOS pipe, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
- 2. on-off circuit according to claim 1, it is characterised in that the drain electrode of first metal-oxide-semiconductor passes through first resistor Connecting the first external power supply, the drain electrode of first metal-oxide-semiconductor is by the grid of second resistance the second metal-oxide-semiconductor of connection, and described the The resistance of one resistance is much smaller than the resistance of the second resistance；And/orThe energy-storage travelling wave tube is electric capacity；And/orThe switching device is diode, and the anode of the diode connects the drain electrode of first metal-oxide-semiconductor, the diode Negative electrode connects the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively.
- 3. a kind of on-off circuit as claimed in claim 1 or 2, it is characterised in that first metal-oxide-semiconductor replaces with the one or three pole Pipe；The source electrode of first metal-oxide-semiconductor corresponds to the emitter stage of first triode, described in the grid of first metal-oxide-semiconductor is corresponding The base stage of first triode, the colelctor electrode of corresponding first triode of drain electrode of first metal-oxide-semiconductor；Wherein, first triode is NPN type triode, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
- A kind of 4. on-off circuit, it is characterised in that including：First metal-oxide-semiconductor, the second triode, energy-storage travelling wave tube and switching device；The drain electrode of first metal-oxide-semiconductor connects the base stage of the first external power supply and the second triode respectively, first metal-oxide-semiconductor Source ground, the grid incoming control signal of first metal-oxide-semiconductor；The emitter stage of second triode connects the first external power supply, and the colelctor electrode connection second of second triode is external Power supply；The energy-storage travelling wave tube is connected across between emitter stage and the base stage of second triode, and described switching device one end connects institute The drain electrode of the first metal-oxide-semiconductor is stated, the other end connects the base stage of the energy-storage travelling wave tube and second triode respectively；Wherein, first metal-oxide-semiconductor is N-channel MOS pipe, and second triode is NPN type triode.
- 5. on-off circuit according to claim 4, it is characterised in that the drain electrode of first metal-oxide-semiconductor passes through first resistor Connecting the first external power supply, the drain electrode of first metal-oxide-semiconductor is by the base stage of second resistance the second triode of connection, and described the The resistance of one resistance is much smaller than the resistance of the second resistance；And/orThe energy-storage travelling wave tube is electric capacity；And/orThe switching device is diode, and the anode of the diode connects the drain electrode of first metal-oxide-semiconductor, the diode Negative electrode connects the base stage of the energy-storage travelling wave tube and second triode respectively.
- 6. a kind of on-off circuit as described in claim 4 or 5, it is characterised in that first metal-oxide-semiconductor replaces with the one or three pole Pipe；The source electrode of first metal-oxide-semiconductor corresponds to the emitter stage of first triode, described in the grid of first metal-oxide-semiconductor is corresponding The base stage of first triode, the colelctor electrode of corresponding first triode of drain electrode of first metal-oxide-semiconductor；Wherein, first triode is NPN type triode, and second triode is NPN type triode.
- A kind of 7. on-off circuit, it is characterised in that including：First metal-oxide-semiconductor, the second metal-oxide-semiconductor, energy-storage travelling wave tube and switching device；The source electrode of first metal-oxide-semiconductor connects the grid of the first external power supply and the second metal-oxide-semiconductor respectively, first metal-oxide-semiconductor Grounded drain, the grid incoming control signal of first metal-oxide-semiconductor；The source electrode of second metal-oxide-semiconductor connects the first external power supply, and the drain electrode of second metal-oxide-semiconductor connects the second external power supply；The energy-storage travelling wave tube is connected across between the source electrode and grid of second metal-oxide-semiconductor, described in switching device one end connection The source electrode of first metal-oxide-semiconductor, the other end connect the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively；Wherein, first metal-oxide-semiconductor is P-channel metal-oxide-semiconductor, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
- 8. on-off circuit according to claim 7, it is characterised in that the drain electrode of first metal-oxide-semiconductor passes through first resistor Connecting the first external power supply, the drain electrode of first metal-oxide-semiconductor is by the grid of second resistance the second metal-oxide-semiconductor of connection, and described the The resistance of one resistance is much smaller than the resistance of the second resistance；And/orThe energy-storage travelling wave tube is electric capacity；And/orThe switching device is diode, and the anode of the diode connects the drain electrode of first metal-oxide-semiconductor, the diode Negative electrode connects the grid of the energy-storage travelling wave tube and second metal-oxide-semiconductor respectively.
- 9. a kind of on-off circuit as claimed in claim 7 or 8, it is characterised in that first metal-oxide-semiconductor replaces with the one or three pole Pipe；The source electrode of first metal-oxide-semiconductor corresponds to the emitter stage of first triode, described in the grid of first metal-oxide-semiconductor is corresponding The base stage of first triode, the colelctor electrode of corresponding first triode of drain electrode of first metal-oxide-semiconductor；Wherein, first triode is PNP type triode, and second metal-oxide-semiconductor is P-channel metal-oxide-semiconductor.
- A kind of 10. on-off circuit, it is characterised in that including：First metal-oxide-semiconductor, the second triode, energy-storage travelling wave tube and switching device；The source electrode of first metal-oxide-semiconductor connects the base stage of the first external power supply and the second triode respectively, first metal-oxide-semiconductor Grounded drain, the grid incoming control signal of first metal-oxide-semiconductor；The emitter stage of second triode connects the first external power supply, and the colelctor electrode connection second of second triode is external Power supply；The energy-storage travelling wave tube is connected across between emitter stage and the base stage of second triode, and described switching device one end connects institute The source electrode of the first metal-oxide-semiconductor is stated, the other end connects the base stage of the energy-storage travelling wave tube and second triode respectively；Wherein, first metal-oxide-semiconductor is P-channel metal-oxide-semiconductor, and second triode is PNP type triode.
- 11. on-off circuit according to claim 10, it is characterised in that the drain electrode of first metal-oxide-semiconductor passes through the first electricity Resistance the first external power supply of connection, the drain electrode of first metal-oxide-semiconductor connect the base stage of the second triode by second resistance, and described The resistance of first resistor is much smaller than the resistance of the second resistance；And/orThe energy-storage travelling wave tube is electric capacity；And/orThe switching device is diode, and the anode of the diode connects the drain electrode of first metal-oxide-semiconductor, the diode Negative electrode connects the base stage of the energy-storage travelling wave tube and second triode respectively.
- 12. a kind of on-off circuit as described in claim 10 or 11, it is characterised in that first metal-oxide-semiconductor replaces with first Triode；The source electrode of first metal-oxide-semiconductor corresponds to the emitter stage of first triode, described in the grid of first metal-oxide-semiconductor is corresponding The base stage of first triode, the colelctor electrode of corresponding first triode of drain electrode of first metal-oxide-semiconductor；Wherein, first triode is PNP type triode, and second triode is PNP type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720613058.2U CN207010638U (en) | 2017-05-25 | 2017-05-25 | On-off circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720613058.2U CN207010638U (en) | 2017-05-25 | 2017-05-25 | On-off circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207010638U true CN207010638U (en) | 2018-02-13 |
Family
ID=61443605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720613058.2U Active CN207010638U (en) | 2017-05-25 | 2017-05-25 | On-off circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207010638U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888734A (en) * | 2019-03-07 | 2019-06-14 | 湖南海博瑞德电智控制技术有限公司 | A kind of automobile power back door Overtemperature protection device of motor |
| CN109936350A (en) * | 2019-03-11 | 2019-06-25 | 北京汇能精电科技股份有限公司 | Electronic switching circuit |
| CN116455377A (en) * | 2023-04-12 | 2023-07-18 | 宁波阔野科技有限公司 | Switch array driving circuit |
-
2017
- 2017-05-25 CN CN201720613058.2U patent/CN207010638U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888734A (en) * | 2019-03-07 | 2019-06-14 | 湖南海博瑞德电智控制技术有限公司 | A kind of automobile power back door Overtemperature protection device of motor |
| CN109936350A (en) * | 2019-03-11 | 2019-06-25 | 北京汇能精电科技股份有限公司 | Electronic switching circuit |
| CN116455377A (en) * | 2023-04-12 | 2023-07-18 | 宁波阔野科技有限公司 | Switch array driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102324835B (en) | Insulated gate bipolar transistor (IGBT) driving circuit | |
| CN206790353U (en) | Isolation transformer driving circuit | |
| CN105281721B (en) | Semiconductor device | |
| CN207010638U (en) | On-off circuit | |
| CN206807279U (en) | A kind of bridge drive circuit | |
| CN204886403U (en) | External power and backup battery's seamless handover circuit | |
| CN106357145B (en) | intelligent power module and air conditioner | |
| CN103972949A (en) | Charge/discharge control circuit and battery device | |
| CN105048422A (en) | Switch transistor voltage drop holding circuit and application of switch transistor voltage drop holding circuit in lithium battery protection circuit | |
| CN105207512B (en) | SPM and air conditioner | |
| CN108599123A (en) | The short-circuit protection circuit and television set of power switch | |
| CN203859700U (en) | Intelligent power module | |
| CN105406845A (en) | P-channel metal oxide semiconductor (PMOS) switch-off control circuit and power supply device | |
| CN205584006U (en) | Prevent surge circuit, switching power supply and display device | |
| CN209134378U (en) | Low-cost and high-performance switch tube driving circuit | |
| CN107196633A (en) | Switch controlling device, ac control system and the refrigeration plant of AC load | |
| CN109167592A (en) | Low-cost and high-performance switch tube driving circuit | |
| CN105656468A (en) | Switch control device and method for electronic device, and electronic device | |
| CN206820461U (en) | Power supply protection circuit | |
| CN213402451U (en) | Power supply circuit and electronic equipment | |
| CN107123977B (en) | The driving circuit of transistor | |
| CN205792214U (en) | The SPM that a kind of self adaptation antistatic strengthens | |
| CN209787072U (en) | direct current power-on protection controller after external switch self-locking | |
| CN106849926A (en) | A kind of pressure nmos switch control circuit wide | |
| CN208738139U (en) | A kind of control relay circuit and relay control device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180312 Address after: Kezhu road high tech Industrial Development Zone, Guangzhou city Guangdong province 510530 No. 192 3 310 floor Co-patentee after: Guangzhou Shiyuan Electronic Technology Company Limited Patentee after: GUANGZHOU SHIKUN ELECTRONICS Co.,Ltd. Address before: Kezhu road high tech Industrial Development Zone, Guangzhou city Guangdong province 510530 No. 192 3 310 floor Patentee before: GUANGZHOU SHIKUN ELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right |