CN105116804A - Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner - Google Patents
Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner Download PDFInfo
- Publication number
- CN105116804A CN105116804A CN201510520016.XA CN201510520016A CN105116804A CN 105116804 A CN105116804 A CN 105116804A CN 201510520016 A CN201510520016 A CN 201510520016A CN 105116804 A CN105116804 A CN 105116804A
- Authority
- CN
- China
- Prior art keywords
- transistor
- driving circuit
- electrically connected
- igbt
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/25—Pc structure of the system
- G05B2219/25314—Modular structure, modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/40—Minimising material used in manufacturing processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
The invention relates to a negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and an air conditioner. The negative-logical IGBT/MOSFET driving circuit comprises two stages of driving circuits, i.e., a first stage of driving circuit and a second stage of driving circuit; the first stage of driving circuit is used for converting the I/O driving level of a low voltage MCU into a specific driving level, and the second stage of driving circuit is used for ensuring the saturation conduction of a driving object IGBT/MOSFET. According to the invention, a cheap and general two-stage triode replaces a routine special-purpose integrated driving IC to control a high current IGBT/MOSFET, thereby reducing the manufacture cost and risk of a control circuit designer under the condition of not changing original performances; in addition, compared with a positive logic driving circuit, the negative-logical driving circuit can greatly reduce material costs and the dependence on a provider under the condition of not changing original performances, thereby enhancing the competitive power of a control circuit provider.
Description
Technical field
The present invention relates to airconditioning control field, particularly relate to a kind of antilogical IGBT/MOSFET driving circuit, drive system, driving method and air-conditioning.
Background technology
Traditional air-conditioner controller, because the I/O mouth output voltage of MCU is lower, load capacity is more weak, is not suitable for the IGBT/MOSFET of Direct driver big current, so have to pass through change-over circuit, to ensure that IGBT/MOSFET works in saturation region.Normal practice is: the I/O of MCU produces PWM and exports, be generally 3.3V or 5V drive level, through special integrated driving IC, be converted to 15V output level drive singal, drived control is carried out to IGBT/MOSFET, uses schematic diagram that special integrated driving IC drives IGBT/MOSFET as shown in Figure 1.
Because integrated driving IC is dedicated devices, for controller circuitry designer, the puzzlement that drive IC environment for use is single, be easily subject to the problems such as the supply of material limits, procurement price is high can be faced.In addition, if previous used drive IC is withdrawn from the market, then controller circuitry designer more has to again select substitute products and again research and develop, and can bring a series of loss that can not estimate thus.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of structure simple antilogical IGBT/MOSFET driving circuit, drive system, driving method and air-conditioning.
The first technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of antilogical IGBT/MOSFET driving circuit, comprises two-stage drive circuit, is respectively first order driving circuit and second level driving circuit; Described first order driving circuit is electrically connected with described second level driving circuit;
Described first order driving circuit is used for the I/O drive level of controller MCU to be converted to specific drive level;
Described second level driving circuit is used for guaranteeing to drive target IGBT/MOSFET saturation conduction.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described first order driving circuit comprises resistance R221, resistance R222, resistance R223, resistance R224 and transistor Q204; Described transistor Q204 is NPN type;
One end of described resistance R221 is electrically connected to pin pfc _ PWM, and described pin pfc _ PWM is the pin of prime controller MCU, and the other end of described resistance R221 is electrically connected to the base stage of described transistor Q204; One end of described resistance R222 is electrically connected to power supply, and the other end is electrically connected to the base stage of described transistor Q204; One end of described resistance R223 is electrically connected to the base stage of described transistor Q204, and the other end is electrically connected with described second level driving circuit; One end of described resistance R224 is electrically connected to power supply, and the other end is electrically connected to the collector of described transistor Q204; The grounded emitter of described transistor Q204.
Further, described second level driving circuit comprises resistance R225, resistance R226, transistor Q205, transistor Q206, transistor Q207, diode D201 and voltage stabilizing diode ZD201; Described transistor Q205 is positive-negative-positive, and described transistor Q206 is NPN type, and described transistor Q207 is IGBT pipe;
The base stage of described transistor Q206 is electrically connected to the collector of described transistor Q204, and the collector of described transistor Q206 is electrically connected to power supply, and the emitter of described transistor Q206 is electrically connected to the emitter of described transistor Q205; The base stage of described transistor Q205 is electrically connected to the collector of described transistor Q204, the grounded collector of described transistor Q205; One end of described resistance R225 is electrically connected to the emitter of described transistor Q206, and the other end is electrically connected to the gate pole of described transistor Q207; One end of described resistance R226 is electrically connected to the gate pole of described transistor Q207, and the other end is electrically connected to the emitter of described transistor Q207; The positive pole of described diode D201 is electrically connected to the gate pole of described transistor Q207, and the negative electricity of described diode D201 is connected to the emitter of described transistor Q206; The positive pole of described voltage stabilizing diode ZD201 is electrically connected to the emitter of described transistor Q207, and the positive pole of described voltage stabilizing diode ZD201 is electrically connected to the gate pole of described transistor Q207; The collector of described transistor Q207 is electrically connected to DC voltage, the grounded emitter of described transistor Q207.
Further, the other end of described resistance R223 is electrically connected with the described second level driving circuit collector that the other end being specially described resistance R223 is electrically connected to described transistor Q205.
Further, the span of described specific drive level is 15V-18V.
Further, that divides the voltage be pressed in described transistor Q204 base stage can not exceed described transistor Q204 opens threshold values.
Further, particular voltage range and specific currents scope that the magnitude of voltage of described pin pfc _ PWM and current value can not exceed described pin pfc _ PWM is flowed through.
The second technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of antilogical IGBT/MOSFET drive system, comprises described antilogical IGBT/MOSFET driving circuit, also comprises controller MCU and drives target IGBT/MOSFET; Described controller MCU, described antilogical IGBT/MOSFET driving circuit are connected successively with described driving target IGBT/MOSFET.
The third technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of driving method of described antilogical IGBT/MOSFET drive system, comprises the following steps:
Step S1, uses described first order driving circuit that the I/O drive level of the described controller MCU of low pressure is converted to specific drive level;
Step S2, uses described second level driving circuit to guarantee described driving target IGBT/MOSFET saturation conduction.
The 4th kind of technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of air-conditioning, comprises described antilogical IGBT/MOSFET drive system.
The invention has the beneficial effects as follows: first, the IGBT/MOSFET of special integrated driving IC to big current that the present invention uses cheap general diode & transistor driving circuit to substitute routine enters activity control, on the basis that original performance is constant, reduce manufacturing cost and the risk of design on control circuit business; Secondly, the circuit driven in the positive logic with other compares, and antilogical driving circuit is ensureing, on the basis that original performance is constant, to significantly reduce the material cost of driving circuit and the dependency degree to supplier, enhance the competitiveness of control circuit provider.
Accompanying drawing explanation
Fig. 1 is the schematic diagram in prior art, IGBT/MOSFET being carried out to drived control;
Fig. 2 is the structural drawing of antilogical IGBT/MOSFET driving circuit described in the embodiment of the present invention one;
Fig. 3 is the circuit theory diagrams of antilogical IGBT/MOSFET driving circuit described in the embodiment of the present invention one;
Fig. 4 is the structural drawing of antilogical IGBT/MOSFET driving circuit described in the embodiment of the present invention two;
Fig. 5 is the process flow diagram of the driving method of antilogical IGBT/MOSFET drive system described in the embodiment of the present invention three.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Fig. 2 is the structural drawing of antilogical IGBT/MOSFET driving circuit described in the embodiment of the present invention one.
As shown in Figure 2, a kind of antilogical IGBT/MOSFET driving circuit, is characterized in that, comprise two-stage drive circuit, is respectively first order driving circuit and second level driving circuit; First order driving circuit is electrically connected with second level driving circuit; First order driving circuit is used for the I/O drive level of controller MCU to be converted to specific drive level, and wherein the value of specific drive level can be determined as required, and preferred span is 15V-18V; Second level driving circuit is used for guaranteeing to drive target IGBT/MOSFET saturation conduction.
Fig. 3 is the circuit theory diagrams of antilogical IGBT/MOSFET driving circuit described in the embodiment of the present invention one.
As shown in Figure 3, described antilogical IGBT/MOSFET driving circuit, comprises resistance R221, resistance R222, resistance R223, resistance R224, resistance R225, resistance R226, transistor Q204, transistor Q205, transistor Q206, transistor Q207, diode D201 and voltage stabilizing diode ZD201; Wherein transistor Q204 and transistor Q206 is NPN type, and transistor Q205 is positive-negative-positive, and transistor Q207 is for driving target IGBT pipe.In Fig. 3 ,+15V represents the power supply used of diode & transistor driving circuit in the embodiment of the present invention one, and certain the present invention also can adopt the power supply of other numerical value as required, and GND represents earth terminal, and VDC represents DC voltage.
Wherein, one end of resistance R221 is electrically connected to pin pfc _ PWM, and pin pfc _ PWM is the pin of prime MCU, and the other end of resistance R221 is electrically connected to the base stage of transistor Q204; One end of resistance R222 is electrically connected to power supply, and the other end is electrically connected to the base stage of transistor Q204; One end of resistance R223 is electrically connected to the base stage of transistor Q204, and the other end is electrically connected to the collector of transistor Q205; One end of resistance R224 is electrically connected to power supply, and the other end is electrically connected to the collector of transistor Q204; The grounded emitter of transistor Q204; The base stage of transistor Q206 is electrically connected to the collector of transistor Q204, and the collector of transistor Q206 is electrically connected to power supply, and the emitter of transistor Q206 is electrically connected to the emitter of transistor Q205; The base stage of transistor Q205 is electrically connected to the collector of transistor Q204, the grounded collector of transistor Q205; One end of resistance R225 is electrically connected to the emitter of transistor Q206, and the other end is electrically connected to the gate pole of transistor Q207; One end of resistance R226 is electrically connected to the gate pole of transistor Q207, and the other end is electrically connected to the emitter of transistor Q207; The positive pole of diode D201 is electrically connected to the gate pole of transistor Q207, and the negative electricity of diode D201 is connected to the emitter of transistor Q206; The positive pole of voltage stabilizing diode ZD201 is electrically connected to the emitter of transistor Q207, and the positive pole of voltage stabilizing diode ZD201 is electrically connected to the gate pole of transistor Q207; The collector of transistor Q207 is electrically connected to DC voltage and VDC, the grounded emitter of transistor Q207.
Wherein, first order driving circuit comprises resistance R221, resistance R222, resistance R223, resistance R224 and transistor Q204; Resistance R222 plays metering function to transistor Q204, in order to avoid BE electrode current is excessive after transistor Q204 saturation conduction, causes transistor Q204 to damage.Resistance R221 and R223 plays dividing potential drop effect, guaranteeing when driving chip output low level can not by the excessive damage causing driving chip of the input voltage of resistance R221 to driving chip, when the pin of driving chip is in short-circuit condition, by resistance R223 and resistance R222 to the dividing potential drop of power supply, thus guarantee that the voltage of Q204 base stage is no more than its ratings, increase transistor Q204 cut-off by mistake when resistance R223 and pull-up power supply mainly prevent driving chip power-up initializing, the conducting of Q204 will be ensured when not working, during Q204 conducting Q206 base stage this be also be in low level, Q206 can not conducting, Q207 also can not conducting, the conducting of transistor Q207 would not be caused like this, thus damage components and parts.
Second level driving circuit comprises resistance R225, resistance R226, transistor Q205, transistor Q206, transistor Q207, diode D201 and voltage stabilizing diode ZD201; Transistor Q206 and transistor Q205 uses the big current triode composition push-pull driver circuit of a pair parameter symmetry, for transistor Q207 saturation conduction provides enough driving forces.Resistance R225 adds loop current when limiting transistor Q206, transistor Q207 conducting, and momentary spikes voltage when limit transistor Q207 opens.Resistance R226 guarantees that transistor Q207 can effective stopping.Voltage stabilizing diode ZD201 protective transistor Q207, prevents the fatal damage that it is brought by surge voltage; Diode D201 adds the speed effectively accelerating transistor Q207 cut-off.When the B node of Q206 is high level, transistor Q206 saturation conduction, transistor Q205, diode D201 end, transistor Q207 saturation conduction; Otherwise transistor Q205 conducting, diode D201 conducting, and the release of accelerated charge, make transistor Q207 fast and effeciently enter cut-off region.
In the present invention, the value of resistance R221, R222 and R223 is calculated by following three conditions to be determined:
First, when starting to power on, some chips need self-inspection, at this moment pin pfc _ PWM just has the self-inspection voltage output of a long-time 1.2V, export self-inspection voltage higher than triode open threshold values time, IGBT/MOSFET will burn out because of opening for a long time, and therefore the choosing value of R221 and R223 will calculate according to the size of electric current and determine.
The second, resistance R222 and R223 by Power supply, and transistor Q204 has and specifically opens threshold value, and therefore the value of resistance R222 and resistance R223 should meet and makes point voltage be pressed in transistor Q204 base stage can not exceed it to open threshold values.
3rd, at power supply, resistance R222, resistance R221 on the path of pin pfc _ PWM, pin pfc _ PWM has particular voltage range and specific currents scope, therefore the value of resistance R222 and resistance R221 should meet make pin pfc _ PWM magnitude of voltage and current value within the scope of its particular voltage range and specific currents.
Cheap two-stage transistor drive circuit is used to substitute conventional special integrated driving IC in the embodiment of the present invention, activity control is entered to the IGBT/MOSFET of big current, in two-stage transistor drive circuit, the first order is for realizing the conversion of driving voltage, the I/O drive level of low pressure MCU is converted to specific drive level, the second level is push-pull driver circuit, drives target IGBT pipe energy saturation conduction for guaranteeing.
Fig. 4 is the structural drawing of antilogical IGBT/MOSFET driving circuit described in the embodiment of the present invention two.
As shown in Figure 4, a kind of antilogical IGBT/MOSFET drive system, comprises antilogical IGBT/MOSFET driving circuit, also comprises controller MCU and drives target IGBT/MOSFET; Controller MCU, antilogical IGBT/MOSFET driving circuit are connected successively with driving target IGBT/MOSFET.
Fig. 5 is the process flow diagram of the driving method of antilogical IGBT/MOSFET drive system described in the embodiment of the present invention three.
As shown in Figure 5, a kind of driving method of antilogical IGBT/MOSFET drive system, comprises the following steps:
Step S1, uses first order driving circuit that the I/O drive level of the controller MCU of low pressure is converted to specific drive level;
Step S2, uses second level driving circuit to guarantee to drive target IGBT/MOSFET saturation conduction.
The embodiment of the present invention four is a kind of air-conditioning comprising described antilogical IGBT/MOSFET drive system.
In the description of this instructions, concrete grammar, device or feature that the description of reference term " embodiment one ", " embodiment two ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not must for be identical embodiment or example.And the specific features of description, method, device or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this instructions or example and different embodiment or example can carry out combining and combining by those skilled in the art.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an antilogical IGBT/MOSFET driving circuit, is characterized in that, comprises two-stage drive circuit, is respectively first order driving circuit and second level driving circuit; Described first order driving circuit is electrically connected with described second level driving circuit;
Described first order driving circuit is used for the I/O drive level of controller MCU to be converted to specific drive level;
Described second level driving circuit is used for guaranteeing to drive target IGBT/MOSFET saturation conduction.
2. antilogical IGBT/MOSFET driving circuit according to claim 1, is characterized in that, described first order driving circuit comprises resistance R221, resistance R222, resistance R223, resistance R224 and transistor Q204; Described transistor Q204 is NPN type;
One end of described resistance R221 is electrically connected to pin pfc _ PWM, and described pin pfc _ PWM is the pin of prime controller MCU, and the other end of described resistance R221 is electrically connected to the base stage of described transistor Q204; One end of described resistance R222 is electrically connected to power supply, and the other end is electrically connected to the base stage of described transistor Q204; One end of described resistance R223 is electrically connected to the base stage of described transistor Q204, and the other end is electrically connected with described second level driving circuit; One end of described resistance R224 is electrically connected to power supply, and the other end is electrically connected to the collector of described transistor Q204; The grounded emitter of described transistor Q204.
3. antilogical IGBT/MOSFET driving circuit according to claim 2, it is characterized in that, described second level driving circuit comprises resistance R225, resistance R226, transistor Q205, transistor Q206, transistor Q207, diode D201 and voltage stabilizing diode ZD201; Described transistor Q205 is positive-negative-positive, and described transistor Q206 is NPN type, and described transistor Q207 is IGBT pipe;
The base stage of described transistor Q206 is electrically connected to the collector of described transistor Q204, and the collector of described transistor Q206 is electrically connected to power supply, and the emitter of described transistor Q206 is electrically connected to the emitter of described transistor Q205; The base stage of described transistor Q205 is electrically connected to the collector of described transistor Q204, the grounded collector of described transistor Q205; One end of described resistance R225 is electrically connected to the emitter of described transistor Q206, and the other end is electrically connected to the gate pole of described transistor Q207; One end of described resistance R226 is electrically connected to the gate pole of described transistor Q207, and the other end is electrically connected to the emitter of described transistor Q207; The positive pole of described diode D201 is electrically connected to the gate pole of described transistor Q207, and the negative electricity of described diode D201 is connected to the emitter of described transistor Q206; The positive pole of described voltage stabilizing diode ZD201 is electrically connected to the emitter of described transistor Q207, and the positive pole of described voltage stabilizing diode ZD201 is electrically connected to the gate pole of described transistor Q207; The collector of described transistor Q207 is electrically connected to DC voltage, the grounded emitter of described transistor Q207.
4. antilogical IGBT/MOSFET driving circuit according to claim 3, it is characterized in that, the other end of described resistance R223 is electrically connected with the described second level driving circuit collector that the other end being specially described resistance R223 is electrically connected to described transistor Q205.
5. antilogical IGBT/MOSFET driving circuit according to claim 1, is characterized in that, the span of described specific drive level is 15V-18V.
6. antilogical IGBT/MOSFET driving circuit according to claim 2, is characterized in that, what point voltage be pressed in described transistor Q204 base stage can not exceed described transistor Q204 opens threshold values.
7. antilogical IGBT/MOSFET driving circuit according to claim 2, is characterized in that, flows through particular voltage range and specific currents scope that the magnitude of voltage of described pin pfc _ PWM and current value can not exceed described pin pfc _ PWM.
8. an antilogical IGBT/MOSFET drive system, comprises antilogical IGBT/MOSFET driving circuit described in any one of claim 1-7, also comprises controller MCU and drives target IGBT/MOSFET; Described controller MCU, described antilogical IGBT/MOSFET driving circuit are connected successively with described driving target IGBT/MOSFET.
9. a driving method for antilogical IGBT/MOSFET drive system described in claim 8, is characterized in that, comprise the following steps:
Step S1, uses described first order driving circuit that the I/O drive level of the described controller MCU of low pressure is converted to specific drive level;
Step S2, uses described second level driving circuit to guarantee described driving target IGBT/MOSFET saturation conduction.
10. an air-conditioning, is characterized in that, comprises antilogical IGBT/MOSFET drive system according to claim 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510520016.XA CN105116804A (en) | 2015-08-21 | 2015-08-21 | Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510520016.XA CN105116804A (en) | 2015-08-21 | 2015-08-21 | Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105116804A true CN105116804A (en) | 2015-12-02 |
Family
ID=54664822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510520016.XA Pending CN105116804A (en) | 2015-08-21 | 2015-08-21 | Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105116804A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106330057A (en) * | 2016-10-31 | 2017-01-11 | 上海螺趣科技有限公司 | Motor device, robot and method for controlling operation of motor device |
| CN106452024A (en) * | 2016-11-30 | 2017-02-22 | 深圳市能隙科技有限公司 | Switching power supply and single power supply-powered negative voltage driving circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1563864A (en) * | 2004-04-02 | 2005-01-12 | 海信集团有限公司 | Conversion refrigerator |
| CN101227161A (en) * | 2007-12-14 | 2008-07-23 | 南京航空航天大学 | Integrated circuit special for controlling switch reluctance motor |
| US20120086374A1 (en) * | 2009-04-15 | 2012-04-12 | Mitsubishi Electric Corporation | Inverter device, motor driving device, refrigerating air conditioner, and power generation system |
| CN203788258U (en) * | 2014-04-01 | 2014-08-20 | 佛山市顺德区和而泰电子科技有限公司 | Novel IGBT/MOSFET driving circuit |
-
2015
- 2015-08-21 CN CN201510520016.XA patent/CN105116804A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1563864A (en) * | 2004-04-02 | 2005-01-12 | 海信集团有限公司 | Conversion refrigerator |
| CN101227161A (en) * | 2007-12-14 | 2008-07-23 | 南京航空航天大学 | Integrated circuit special for controlling switch reluctance motor |
| US20120086374A1 (en) * | 2009-04-15 | 2012-04-12 | Mitsubishi Electric Corporation | Inverter device, motor driving device, refrigerating air conditioner, and power generation system |
| CN203788258U (en) * | 2014-04-01 | 2014-08-20 | 佛山市顺德区和而泰电子科技有限公司 | Novel IGBT/MOSFET driving circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106330057A (en) * | 2016-10-31 | 2017-01-11 | 上海螺趣科技有限公司 | Motor device, robot and method for controlling operation of motor device |
| CN106330057B (en) * | 2016-10-31 | 2019-04-26 | 上海螺趣科技有限公司 | A kind of method of electric machine, robot and control electric machine operation |
| CN106452024A (en) * | 2016-11-30 | 2017-02-22 | 深圳市能隙科技有限公司 | Switching power supply and single power supply-powered negative voltage driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106026621B (en) | A kind of band avoids the IGBT drive circuit and detection method of short-circuit protection blind area | |
| CN204967246U (en) | IGBT short circuit detects protection circuit and because IGBT's controllable rectifier circuit | |
| CN106357145B (en) | intelligent power module and air conditioner | |
| CN104348347A (en) | Starting circuit for auxiliary power supply of photovoltaic inverter | |
| CN103326315B (en) | A kind of under-voltage protecting circuit and high voltage integrated circuit | |
| CN203788258U (en) | Novel IGBT/MOSFET driving circuit | |
| CN105116804A (en) | Negative-logical IGBT/MOSFET driving circuit, driving system and driving method, and air conditioner | |
| CN205509647U (en) | Switch control device | |
| CN106533144A (en) | Reverse connection and current backfeed prevention circuit | |
| CN116545257A (en) | Control method of switching circuit and switching circuit | |
| CN209313809U (en) | The switching circuit structure of adjustable timing | |
| CN211267164U (en) | PFC voltage boost segmented circuit and LED driving power supply | |
| CN106067800A (en) | NMOS tube high voltage high-speed driving circuit | |
| CN204967263U (en) | Buffer circuit and dual power supply system | |
| CN208861199U (en) | A kind of multilevel decompression voltage regulator circuit with clamper function | |
| CN208849457U (en) | Power supply switch circuit and multiple-way feed system | |
| CN104837245B (en) | A kind of LED drive chip and BUCK type LED drive circuit | |
| CN206272334U (en) | Automatically switch and circuit is set in railway traffic vehicle source | |
| CN205792500U (en) | A kind of inductive load voltage PWM magnetic release circuit | |
| CN102480134B (en) | A kind of solar recharging system | |
| CN108923388A (en) | A kind of fault detection circuit powering on buffer cell and method | |
| CN204615626U (en) | Intelligent power module circuit and air conditioner | |
| CN204012647U (en) | IGBT under-voltage protection drive circuit based on PWM controller | |
| CN203023095U (en) | Driving protection circuit and device used for low-voltage direct-current fan of refrigerator | |
| CN204376382U (en) | For the protective circuit of LED high-voltage light bar |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151202 |
|
| RJ01 | Rejection of invention patent application after publication |