CN105914286A - Multi-tube core LED package and packaging method thereof - Google Patents
Multi-tube core LED package and packaging method thereof Download PDFInfo
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- CN105914286A CN105914286A CN201610525614.0A CN201610525614A CN105914286A CN 105914286 A CN105914286 A CN 105914286A CN 201610525614 A CN201610525614 A CN 201610525614A CN 105914286 A CN105914286 A CN 105914286A
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 78
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims description 51
- 238000000576 coating method Methods 0.000 claims description 51
- 238000005538 encapsulation Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 13
- 239000002002 slurry Substances 0.000 claims description 13
- 239000007888 film coating Substances 0.000 claims description 7
- 238000009501 film coating Methods 0.000 claims description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
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- 239000000203 mixture Substances 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 241000218202 Coptis Species 0.000 claims description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
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- 230000003287 optical effect Effects 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
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- 238000005516 engineering process Methods 0.000 description 4
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- 238000002156 mixing Methods 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED package and a packaging method thereof. The LED package comprises an anode electrode, a cathode electrode, a plurality of light-emitting tube cores, a fluorescent layer, a resin lens layer, electric connection lines, a reflecting film and conductive silver paste, wherein the plurality of light-emitting tube cores are arranged at the upper part of the substrate and are fixed on the upper part of the substrate through the conductive silver paste; the anode electrode and the cathode electrode are arranged at two sides of the substrate respectively; one side of the anode electrode is connected with the plurality of light-emitting tube cores through the electric connection lines; one side of the cathode electrode is connected with the substrate through the conductive silver paste; the LED package is characterized in that the reflecting film is arranged at the upper part of the substrate; and a bowl-shaped space for accommodating the light-emitting tube cores is formed in the cathode electrode; and the reflecting film covers the inner wall of the bowl-shaped space formed by the cathode electrode.
Description
Technical field
The invention belongs to field of semiconductor package, relate to light emitting diode (LED), particularly to one, there is good heat radiating knot
The LED encapsulation structure of the Multi-core of structure and mechanism and method for packing.
Background technology
Light emitting diode (LED) is a kind of circulating current in quasiconductor, thus sends the diode of light.Wherein, according to sending out
The difference of light, including using GaAs, (GaAs sends ultrared light emitting diode, uses arsenic gallium aluminum (GaAIAs) to send
Infrared ray or the light emitting diode of HONGGUANG, use gallium arsenide phosphide (GaAsP) to send redness, the orange or luminescence two of yellow
Pole is managed, and uses gallium phosphide (GaP) to send the light emitting diode of redness, green or yellow, uses gallium nitride (GaN) to send out
Go out the light emitting diode of white.
It is now widely used for the surface mounting LED in the various fields such as technicolo tabula rasa and illuminator, is by pottery or print
The substrate that circuit board processed is formed welds LED chip, and at an upper portion thereof with resin plastic-sealed, thus form lens, improving
While brightness, it is easier to give out in heat produced by LED chip.
Light emitting diode (LED:light emitting diode) belongs to a kind of specific type of diode, is to be turned by electric energy
Turn to the solid-state semiconductor device of luminous energy, when electric current is by the PN junction of LED, photon can be inspired.LED light energy simultaneously
Transformation efficiency is higher, and therefore LED is widely used in instruction, display, illuminating lamp field, particularly at light source lighting field, LED
Getting more and more of application, single emitting led power is increasing.
In recent years, along with the gradually exploitation of high-power LED chip, in order to be effectively discharged out in LED chip produced heat
Technology is developed the most therewith, to improve the radiating efficiency of LED chip, it has been developed that substrate is made by metal material
LED chip, wherein for preventing from producing short circuit when installing LED chip, on metal basal board after formation insulating barrier, passes through
LED chip installed by the circuit board being formed on insulating barrier, and realizes electrical connection by lead-in wire joint etc..
White light LEDs is little with volume, life-span length, environmental protection, and can meet various adverse circumstances require advantage and obtain greatly development,
And power type white light LED has become one of important solid light source, its encapsulation technology have also been obtained unprecedented development.
A kind of high-power white light LED packaging method as open in Chinese patent CN101404317A, by LED wafer die bond at base
In seat, after baking bonding wire, in pedestal, put transparent silica gel so that transparent silica gel covers LED wafer, then covers whole with lens
Individual pedestal, then in the cavity that lens and pedestal bonding are formed, fill fluorescent glue at the aperture of picking up the ears of rims of the lens.Final raising
The concordance of LED light color, but this patent is to improving light efficiency DeGrain.
And for example Chinese patent CN101369623A provides the technique of coating fluorescent powder in a kind of LED chip, by fluorescent material and glue
According to a certain percentage after mixing, through repeatedly applying baking-curing, until the glue in bowl and the liquid after phosphor mixture solidification
Face is concordant with bowl top edge, occurs without indenture.Effectively solve the fluorescent material precipitation in the solidification of fluorescent material primary coating and assemble existing
As.
A kind of method of layering and precipitating fluorescent powder during and for example Chinese patent CN101714598A discloses packaging process of white LED,
Additive, yellow fluorescent powder, silica gel are the most uniformly mixed and does deaeration process, this material is filled into white light LEDs big
In power support bowl, after keeping 2 hours, carry out segmentation baking, through 70 DEG C, 90 DEG C, 110 DEG C, then keep respectively to 150 DEG C
1～2 hour, make white light LEDs finished product.This invention specially uses the mode of layering and precipitating so that fluorescent material precipitation is uniform,
The problem being effectively improved homogeneity of product difference.Carry out toasting to a certain extent can through repeatedly coating baking or segmentation by fluorescent material
Play the effect improving aperture, strengthening product uniformity, but usually can introduce fluorescent material lamination simultaneously, still can not obtain height
Light efficiency, the white light LEDs of high uniformity.
And for example the open a kind of high-power LED encapsulation structure of Chinese patent CN102185087A, uses a kind of bulky grain in its structure
Mixing small size salt, makes the fluorescent glue of coating more than sides of chip position, forms the arc consistent with the lens radian covered.
The fluorescent glue of its coating is to be mixed into little granule in bulky grain, and the radius of large and small granule, consumption are each meets certain proportionate relationship.
Bulky grain mixes little granule and can play certain effect improving photochromic quality, but owing to once completing coating, coating height
More than sides of chip position, sides of chip is thus made still to have deposited a large amount of fluorescent material, it is to avoid not going out again of yellow circle phenomenon
Existing.
And for example Chinese patent CN103178194A discloses a kind of large power white light LED encapsulating structure and preparation method thereof, logical
Cross rotary coating for the first time, LED chip upper surface and sidewall coat one layer of internal layer mixed by small size salt
Fluorescent glue, after drying, recycles automatic dispensing machine specking, local corresponding above internal layer fluorescent glue upper surface, LED chip
One layer of outer layer fluorescent glue mixed by large granule fluorescent material of position coating.Outer layer fluorescent glue is utilized to be difficult to infiltrate and dried
The characteristic of internal layer fluorescent glue so that the outer layer fluorescent glue local location that only Founder is corresponding in LED chip forms a convex closure.Carry
High light efficiency, avoid fluorescent material to be deposited in LED chip lateral location in a large number to a certain extent and produce the technology of yellow circle phenomenon not
Foot.But the program the most thoroughly solves this technical problem.
At present LED photovoltaic transformation efficiency only about 35～50%, other electric energy are converted to heat energy, and the power of LED constantly carries
Rising, the heat dissipation problem how solving LED becomes increasingly to highlight.If the heat radiation of LED can not be solved in time, can be because dissipating
Heat makes wavelength change, thus the transformation efficiency producing yellowing phenomenon or light diminishes.Before actual LED uses, it is necessary to
Luminous die is packaged.General finished product LED mainly comprises LED die, heat sink, electrical connection, fluorescence coating, resin
The parts such as lens.The heat that LED generates finally discharges device and encapsulation, it is necessary to through encapsulation, heat sink, circuit board and each layer rank
Connect layer.Traditional LED is limited to the factors such as its encapsulating structure, heat sink material, light path setting, connecting layer heat conduction and technique, nothing
Method solves heat dissipation problem very well, limits further genralrlization and the application of LED, and especially on great power LED, problem is convex
Seem and become apparent from.
For solving this technical problem.The present inventor, through concentrating on studies, proposes a kind of scheme solving this technical problem.
Summary of the invention
It is an object of the invention to provide a kind of LED encapsulation with great heat radiation effect and method for packing.
The present invention provides a kind of LED encapsulation, contains anode electrode, cathode electrode, substrate, luminous die, fluorescence coating, tree
Fat lens jacket, is electrically connected line, reflectance coating, conductive silver paste；Plurality of described luminous die is arranged on the top of described substrate,
And it is fixed on surface by described conductive silver paste；Described anode electrode, cathode electrode are separately positioned on described substrate both sides,
Described anode electrode side is electrically connected line and is connected with multiple described luminous dies described in passing through, and institute is passed through in described cathode electrode side
State conductive silver paste to be connected with described substrate；It is characterized in that: described reflectance coating is arranged on the top of described substrate, described negative electrode electricity
Pole is internally formed the bowl shaped space accommodating described luminous die, and the formation of the described reflectance coating described cathode electrode of covering is bowl-shape
The inwall in space；And the bottom of described substrate is pressed into the internal shape protruded of bowl shaped space.
Described reflectance coating is arranged on the top of described substrate, and described cathode electrode is internally formed and accommodates the bowl-shape of described luminous die
Space, and the inwall of the formation bowl shaped space of the described reflectance coating described cathode electrode of covering.
Preferably, described reflectance coating is W metal film, and thickness is 8nm；Described fluorescence coating, resin lens layer are arranged on described sending out
Above light tube core, and present elliptical lenses shape.
Preferably, described substrate material is SiAl alloy, and the bowl shaped space that described substrate is formed is inverted round table shape；Described conduction
Silver slurry is Ag and Sn mixture.
The present invention provides the method for packing that LED encapsulates, it is characterised in that:
Substrate manufacture: carry out anode electrode, cathode electrode and substrate cutting by lathe, and use punching press bedding at cathode electrode
On suppress the inverted round table shape with holonmic space, and the bottom of substrate is pressed into the internal shape protruded of bowl shaped space
Shape；
Substrate film coating: carry out realizing substrate film coating by vacuum coating, concrete operations are to placing by the substrate manufactured in step 1
In film plating frame, open vacuum pump and coater indoor are evacuated to 10-5 Pascal, power-on energising plated film, be heated to
Ni fusing point 5 seconds, fast shut-off power supply, to be cooled, inflate in vacuum chamber, open vacuum chamber, take out substrate, from
And obtain the reflectance coating on substrate；
Silver slurry is laid: is fixed on substrate by multiple luminous dies by the silver slurry modulated, and is preheated to 100 DEG C, silver on brush
Slurry, fixing luminous die；
Gold thread welds: will be electrically connected line and be connected with luminous die；
Fluorescence coating is laid: transparent silica gel adds appropriate fluorescent material, covers LED wafer, forms fluorescence coating；
Form resin lens layer: use epoxy resin cure outside fluorescence coating, and be formed as the shape of lens, with optical lens
One-body molded.Obtain LED encapsulation.
The novel LED encapsulation structure of the present invention, can improve the radiating effect of LED encapsulation；
The heat conduction silver slurry of the present invention, has radiating effect and adhesion strength；
The reflectance coating of the present invention has good optical reflecting properties, can effectively reflect visible ray and infrared light so that in LED encapsulation
Luminous energy effectively reflect, improve light emission rate, with reduce encapsulation in material heat absorption cause LED temperature higher, degradation problem.
As preferably, New LED encapsulation includes that anode electrode, cathode electrode, substrate, luminous die, fluorescence coating, resin are saturating
Mirror layer.
As preferably, luminous die is positioned at directly over substrate；
As preferably, anode electrode, cathode electrode are positioned at substrate both sides, and cathode electrode also can be one-body molded with substrate.
As preferably, substrate is inverted round table shape, and round platform sideline and base plane angle are 30～60 °；
As preferably, SiAl alloy selected by substrate, and wherein the content of Si is 3～10%；
As preferably, substrate can arrange one or more tube core；
As preferably, can be bondd by conductive silver paste between substrate and luminous die, conductive silver paste is Ag and Sn mixture, Ag
Content be 15～28%.
As preferably, substrate being provided with layer of Ni reflecting layer, thickness is 5～15nm；
Present invention also offers a kind of LED encapsulation method for packing:
1, electrode, substrate cutting, round platform compacting are carried out by press machine；
2, carry out realizing substrate film coating by vacuum coating or electro-plating method；
3, luminous die is fixed on substrate by the silver slurry by modulating, and thickness is 0.05～0.1mm；
4, gold thread welding；
5, fluorescence coating is laid；
6, epoxy resin cure and optical lens are one-body molded；
7, electrical testing.
The invention have the advantages that
1, the present invention has great heat radiation effect, and tube core is long for service life, and light emission rate and conversion ratio are higher, is suitable for shining
Bright field LED encapsulates use.
2, process links of the present invention is more succinct, is suitable for industrialization and produces.
Accompanying drawing explanation
Fig. 1 is the Multi-core LED encapsulation structure schematic diagram of the present invention；
Fig. 2 is the Multi-core LED encapsulation structure schematic diagram of another embodiment of the present invention；
The Multi-core LED encapsulation structure schematic diagram of Fig. 3 another embodiment of the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is further described, but does not limit the invention to these and be embodied as
Mode.One skilled in the art would recognize that and present invention encompasses potentially included in Claims scope all alternative
Scheme, improvement project and equivalents.
Embodiment 1
Below in conjunction with accompanying drawing, the present invention is described in further detail.With reference to Fig. 1, this embodiment provides a kind of Multi-core LED
Encapsulation contains anode electrode 05, cathode electrode 04, substrate 03, luminous die 01, fluorescence coating 06, resin lens layer 07,
It is electrically connected line 09, reflectance coating 08, conductive silver paste 02.
Plurality of described luminous die 01 is arranged on the top of substrate 03, and is fixed on substrate 03 by conductive silver paste 02
Top；Anode electrode 05, cathode electrode 04 are separately positioned on substrate 03 both sides, and anode electrode 05 side is by being electrically connected
Line 09 is connected in parallel with multiple luminous dies 01, and cathode electrode 04 side is connected with substrate by conductive silver paste 02.
Alternatively, anode electrode 05, cathode electrode 04 also can be connected with luminous die 01 by being electrically connected line 09 both sides.
As shown in Figure 1；Reflectance coating 08 is arranged on above substrate 03, and cathode electrode 04 is formed with the bowl accommodating luminous die 01
Shape space, and the inwall of the formation bowl shaped space of reflectance coating 08 covered cathode electrode 04.
Further, reflectance coating 08 is W metal film, and thickness is 8nm；Fluorescence coating 06, resin lens layer 07 are arranged on to be sent out
Above light tube core 01, and present elliptical lenses shape.
In this embodiment, substrate material is SiAl alloy, and wherein the content of Si is 3%, and the content of Al is 95%；Base
The bowl shaped space that plate 03 is formed is inverted round table shape, and round platform sideline and substrate 03 base plane angle are 45 °, on substrate 03
Place a luminous die 01；Conductive silver paste 02 is Ag and Sn mixture, and the content of preferred Ag is 18%, and Sn contains
Amount is 82%.
It is as follows that the present embodiment also provides for a kind of concrete method for packing:
1) substrate manufacture: carry out anode electrode, cathode electrode and substrate cutting by lathe, and use punching press bedding at the moon
The inverted round table shape with holonmic space is suppressed on the electrode of pole；
2) substrate film coating: carry out realizing substrate film coating by vacuum coating, concrete operations are the substrate that will manufacture in step 1
To being placed in film plating frame, open vacuum pump and coater indoor are evacuated to 10-5Pascal, power-on
Energising plated film, is heated to Ni fusing point 5 seconds, and fast shut-off power supply is to be cooled, inflates in vacuum chamber,
Open vacuum chamber, take out substrate, thus obtain the reflectance coating on substrate；
3) silver slurry is laid: is fixed on substrate by multiple luminous dies by the silver slurry modulated, and is preheated to 100 DEG C,
Silver slurry on brush, fixing luminous die, silver slurry thickness is 0.08mm；
4) gold thread welding: line will be electrically connected and be connected with luminous die；
5) fluorescence coating is laid: transparent silica gel adds appropriate fluorescent material, covers LED wafer, forms fluorescence coating；
6) resin lens layer is formed: use epoxy resin cure outside fluorescence coating, and be formed as the shape of lens, with light
Lens are one-body molded.Obtain LED encapsulation.
Embodiment 2
With reference to Fig. 2, this embodiment provides a kind of Multi-core LED encapsulation to contain anode electrode 05, cathode electrode 04, base
Plate 03, luminous die 01, fluorescence coating 06, resin lens layer 07, be electrically connected line 09, reflectance coating 08, conductive silver paste 02.
Plurality of described luminous die 01 is arranged on the top of substrate 03, and is fixed on substrate 03 by conductive silver paste 02
Top；Anode electrode 05, cathode electrode 04 are separately positioned on substrate 03 both sides, and anode electrode 05 side is by being electrically connected
Line 09 is connected in series with multiple luminous dies 01, and cathode electrode 04 side is connected with substrate by conductive silver paste 02.
Alternatively, anode electrode 05, cathode electrode 04 also can be connected with luminous die 01 by being electrically connected line 09 both sides.
As shown in Figure 1；Reflectance coating 08 is arranged on above substrate 03, and cathode electrode 04 is formed with the bowl accommodating luminous die 01
Shape space, and the inwall of the formation bowl shaped space of reflectance coating 08 covered cathode electrode 04.
Further, reflectance coating 08 is W metal film, and thickness is 8nm；Fluorescence coating 06, resin lens layer 07 are arranged on to be sent out
Above light tube core 01, and present elliptical lenses shape.
Embodiment 3,
Different from embodiment 1, the bottom of substrate 03 is pressed into the internal shape protruded of bowl shaped space, so that substrate
The bottom of 03 has bigger cooling surface area, improves the radiating effect of substrate.
Present invention is simply schematically illustrated by above-mentioned specific embodiment, does not represent the restriction to present invention.This area
Technical staff it is envisioned that in the present invention concrete structure can have a lot of versions, but the master of the used technical solution
Want technical characteristic same or similar with the present invention, all should be covered by scope.
Claims (4)
1. a LED encapsulation, contains anode electrode, cathode electrode, substrate, luminous die, fluorescence coating, resin lens layer,
It is electrically connected line, reflectance coating, conductive silver paste；Plurality of described luminous die is arranged on the top of described substrate, and
It is fixed on surface by described conductive silver paste；Described anode electrode, cathode electrode are separately positioned on described substrate both sides,
Described anode electrode side is electrically connected line and is connected with multiple described luminous dies described in passing through, and described cathode electrode side leads to
Cross described conductive silver paste to be connected with described substrate；It is characterized in that:
Described reflectance coating is arranged on the top of described substrate, and described cathode electrode is internally formed and accommodates described luminous die
Bowl shaped space, and the inwall of the formation bowl shaped space of the described reflectance coating described cathode electrode of covering；And described substrate
Bottom is pressed into the internal shape protruded of bowl shaped space.
2. LED encapsulation as claimed in claim 1, it is characterised in that: described reflectance coating is W metal film, and thickness is 8nm；
Described fluorescence coating, resin lens layer are arranged on above described luminous die, and present elliptical lenses shape.
3. LED encapsulation as claimed in claim 1, it is characterised in that: described substrate material is SiAl alloy, and described substrate is formed
Bowl shaped space be inverted round table shape；Described conductive silver paste is Ag and Sn mixture.
4. the method for packing of the LED encapsulation as described in one of claim 1-3, it is characterised in that:
1) substrate manufacture: carry out anode electrode, cathode electrode and substrate cutting by lathe, and use punching press bedding at negative electrode electricity
Suppress the inverted round table shape with holonmic space on extremely, and the bottom of substrate is pressed into inside bowl shaped space
The shape protruded；
2) substrate film coating: carry out realizing substrate film coating by vacuum coating, concrete operations are to putting by the substrate of manufacture in step 1
Put in film plating frame, through plated film, thus obtain the reflectance coating on substrate；
3) silver slurry is laid: is fixed on substrate by multiple luminous dies by the silver slurry modulated, and is preheated to 100 DEG C, on brush
Silver slurry, fixing luminous die；
4) gold thread welding: line will be electrically connected and be connected with luminous die；
5) fluorescence coating is laid: transparent silica gel adds appropriate fluorescent material, covers LED wafer, forms fluorescence coating；
6) resin lens layer is formed: use epoxy resin cure outside fluorescence coating, and be formed as the shape of lens, with optical lens
Mirror is one-body molded.Obtain LED encapsulation.
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| CN201610525614.0A CN105914286A (en) | 2016-06-30 | 2016-06-30 | Multi-tube core LED package and packaging method thereof |
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| CN201610525614.0A CN105914286A (en) | 2016-06-30 | 2016-06-30 | Multi-tube core LED package and packaging method thereof |
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| JP2000058924A (en) * | 1998-08-06 | 2000-02-25 | Shichizun Denshi:Kk | Surface mounting-type light emitting diode and its manufacture |
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Application publication date: 20160831 |