CN102891235B - High-output low-attenuation white light LED (light emitting diode) and manufacturing method thereof - Google Patents
High-output low-attenuation white light LED (light emitting diode) and manufacturing method thereof Download PDFInfo
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- CN102891235B CN102891235B CN201110203854.6A CN201110203854A CN102891235B CN 102891235 B CN102891235 B CN 102891235B CN 201110203854 A CN201110203854 A CN 201110203854A CN 102891235 B CN102891235 B CN 102891235B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The invention relates to a high-output low-attenuation white light LED (light emitting diode) and a manufacturing method of the white light LED. The white light LED comprises a chip, a lead, a base provided with a circuit and a bracket bowl cup, wherein the base is arranged inside the bracket bowl cup; the chip is fixed on the base; a circular thin film prepared by the mixture of fluorescent powder and silicon gel is arranged at the upper edge of the base; and the part between the chip and the circular thin film is filled with silicon gel. According to the cut circular thin film, the primarily screened fluorescent powder of large particles in the mixture of the fluorescent powder and the silicon gel are uniformly mixed, so that the light emission efficiency of the LED is increased, and the quality of the white light LED is improved.
Description
Technical field
The present invention relates to a kind of high output low-attenuation white light LED and preparation method thereof, belong to optoelectronic applications technical field.
Background technology
Semiconductor industry, as the novel industry of one, is fabricated into middle reaches LED from upstream chip, and last application has defined the process route of a comparative maturity.White light LEDs manufacture method is also divided multiple, excite in the technique of yellow fluorescent powder at the blue chip generally used, conventional method is directly coated on chip by fluorescent material, this way easily cause fluorescent material by heat fade, light efficiency is caused to reduce, color displacement, by the impact of fluorescent powder grain degree, white light efficiency is lower.CN101807659A (CN201019063026.X) provides a kind of method for packaging white LED of locally sprayed with fluorescent powder, and LED chip after die bond, bonding wire, is placed LED support in a mould, exposed chip and fringe region on power-type support; Be atomized by sprayed fluorescent powder colloid with the atomizer of automatic dispensing machine, phosphor gel tiny on chip surface and sidewall drips connection film forming; By the heat sink surface of support described in plasma treatment, glue drips and mainly converges in chip circumference; Form the uniform phosphor gel body thin film of one deck at chip circumference, after hot curing or ultra-violet curing, form the local coating of LED fluorescent powder.The method is form uniform overlay by surface tension at chip surface and side due to phosphor powder layer, make the fluorescence excitation in all directions and chip emission light ratio example almost equal, make evenly photochromic.
In order to reduce the impact of chip on fluorescent material, that avoids fluorescent material is subject to heat fade, CN101661987A (200910192377.0) provides a kind of white-light LED structure setting up heat-barrier material between chip and phosphor powder layer, comprise support and be located at the LED chip on support, LED chip is coated with heat-insulation transparent material layer, heat-insulation transparent material layer is also coated with phosphor powder layer, and the exiting surface of this heat-insulation transparent material layer and phosphor powder layer directly form lens arrangement or on phosphor powder layer, arrange a lens arrangement.The quantity of this LED chip is multiple, and each LED chip independently applies heat-insulation transparent material layer and phosphor powder layer successively, or by each LED chip entirety coating heat-insulation transparent material layer and phosphor powder layer.The present invention can improve the heat dissipation problem of large power white light LED, reduces light decay, makes photochromic more stable.The application quotes this patent documentation in full as prior art.CN101872829A (201010204991.7) discloses a kind of high-luminous-efficiency white light LEDs, comprises wafer, wire, pedestal and reflector, also comprises lens, the first layer of silica gel, the second layer of silica gel and fluorescent material; Lens comprise the translucent cover of an arc-shaped, and the first layer of silica gel is positioned at translucent cover, and wafer is positioned at the bottom of reflector and is positioned at described translucent cover; Described fluorescent material mixes with the second layer of silica gel and forms fluorescence silica gel layer, and it is outer and fill up described reflector that described fluorescence silica gel layer is positioned at lens; The both positive and negative polarity of LED wafer is electrically connected with external positive and negative electrode respectively by wire.The fluorescent material subject wafer impact when lighting of this white light LEDs is little, improves luminous efficiency.The application quotes this patent documentation in full as prior art.
The deficiencies in the prior art part is fluorescent material to be directly coated on chip and fringe region easily cause fluorescent material by heat fade, cause light efficiency to reduce, color displacement, owing to being subject to the impact of fluorescent powder grain degree, white light efficiency is lower.If first use heat-insulation transparent material to apply phosphor powder layer more thereon to grasp not easily for the thickness of heat-insulation transparent material, cause the white light LEDs consistency made bad.Another scheme, the first layer of silica gel is injected in translucent cover, the second layer of silica gel and fluorescent material is filled up outside translucent cover, its used silica gel difference causes trouble, and silica gel translucent cover outside and phosphor powder layer higher to the requirement of translucent cover easily come off, phosphor powder layer is exposed easily contact with air outside aging.
Summary of the invention
The present invention is directed to the deficiency of existing white-light LED structure and packaging technology existence, white-light LED structure and the manufacture method of the low decay of a kind of high output are provided.
Term illustrates: LED is the abbreviation of light-emitting diode.
Technical scheme of the present invention is as follows:
A kind of white light emitting diode, comprises chip, wire, the pedestal being shaped with circuit, support bowl cup, and base shape is suitable with support bowl cup, and fit and be placed in support bowl cup, chip die bond is on pedestal, and chip both positive and negative polarity is welded on the circuit of pedestal; The circular membrane that fluorescent material and silica-gel mixture are made buckles into edge on pedestal, and described circular membrane and chip upper surface distance are 2-4 millimeter; Described circular membrane there is silica gel hand-hole, between chip and circular membrane, fill silica gel.
Described fluorescent material and the circular membrane of silica-gel mixture are in mass ratio (0.1-0.2): fluorescent material and silica gel mix by 0.8, this mixture is carried out vacuumizing and defoaming to be placed in container at 160-180 DEG C, to toast solidification in 15-20 minute, cut the fluorescent material after solidification and silica-gel mixture the latter half, cut into according to the diameter on edge on pedestal circular obtained.
Silica gel hand-hole on described circular membrane is 2 or 4, is located at circular membrane symmetrically and keeps to the side place.
Silica gel hand-hole on described circular membrane is 3, with the circular membrane center of circle equidistant and 3 be arranged on circular membrane equally spacedly and keep to the side and locate.
Height of the present invention exports the manufacture method of low-attenuation white light light-emitting diode, comprises the following steps:
(1) by fluorescent material and silica gel in mass ratio (0.1-0.2): 0.8 mixing and stirring, pour into after vacuumizing and defoaming in a container, put into baking box baking-curing, baking temperature is 160-180 DEG C, and baking time is 15-20 minute; The fluorescent material that must solidify and silica-gel mixture.
(2) fluorescent material of solidification and silica-gel mixture are carried out cutting with the half of thickness, the latter half of the mixture of the fluorescent material after cutting and silica gel is cut into circle according to the diameter on edge on pedestal, obtain circular membrane, be provided with silica gel hand-hole at the circular membrane place of keeping to the side.
(3) chip die bond is on the pedestal being shaped with circuit, chip both positive and negative polarity bonding wire connects the circuit on pedestal, pedestal is put into support bowl cup, the circular membrane that step (2) is obtained is fastened on edge on pedestal, circular membrane distance chip upper surface 2-4 millimeter, then silica gel is injected, until fill silica gel between chip and circular membrane by the silica gel hand-hole on circular membrane.
(4) semi-finished product obtained for step (3) are toasted 10-15 minute in 100 DEG C, select lens or mould bar to carry out encapsulated moulding.
According to the present invention, described hole for injecting glue diameter is 1-3 millimeter; When hand-hole be 2 or 4 time be symmetrical arranged; When silica gel hand-hole is 3, with the circular membrane center of circle equidistant and 3 arrange equally spacedly.
According to the present invention, the thickness of mixture in container of described fluorescent material and silica gel can regulate and control according to white light colour temperature demand, is generally advisable with thickness 4-8 millimeter;
According to the present invention, the wavelength model adapted with LED die wavelength selected by described fluorescent material, and described silica gel is LED.With reference to prior art.
In said method, after the mixture of step (2) fluorescent material and silica gel toasts, the bulky grain of fluorescent material is sunken to bottom, fine particle is positioned at upper strata, therefore the fluorescent material of solidification and silica-gel mixture are carried out cutting with the half of thickness, leave the many half of lower floor's fluorescent material bulky grain and make circular membrane, avoid upper strata fluorescent material fine powder to affect the light efficiency of LED.
In said method, the mixture baking temperature of step (2) fluorescent material and silica gel specifies baking temperature 30-50 DEG C higher than silica gel.Reduce and rapid solidification to make under its high temperature moment viscosity.
Feature of the present invention is: 1, use the fluorescent material of solidification and the latter half of silica-gel mixture to make circular membrane, utilize the physical property under silica gel different temperatures, moment viscosity reduction also rapid solidification under high temperature, fluorescent material bulky grain can precipitate at short notice, and the fine powder powder affecting light efficiency is then cured in the upper strata of mixture; 2, this fluorescent material and silica-gel mixture circular membrane have 2-4 millimeter distance from chip, its gap transparent silica gel is filled up, solve heat radiation and fluorescent material attenuation problem, can prevent fluorescent material from affecting the decay caused by chip temperature, thus improve the quality of white light LEDs; 3, design a kind of white light LEDs pedestal carrying out circuit simultaneously, the requirement of tube core bonding wire and support fluorescent material and silica-gel mixture circular membrane can be met.Fluorescent material contacts with edge on pedestal with the circular membrane edge of the mixture of silica gel, is convenient to shedding of heat.
In circular membrane after cutting of the present invention, in fluorescent material and silica-gel mixture, bulky grain fluorescent material is main, greatly reduce upper strata fluorescent material fine powder to the adverse effect of the light efficiency of LED, and the bulky grain fluorescent material of screening mixes, improve the light extraction efficiency of LED, thus improve the quality of white light LEDs.
Accompanying drawing explanation
Fig. 1 is LED structure schematic diagram of the present invention, and Fig. 2 is the shaping LED schematic diagram of covering.Wherein, 1 is circular membrane, and 2 is silica gel hand-holes, and 3 is the white light LEDs pedestals being shaped with circuit, and 4 is blue chips, and 5 is support bowl cups, and 6 is bonding wire spun gold (wires), and 7 is silica gel, and 8 is lens.
Fig. 3 is the LED product luminescent spectrum figure of the embodiment of the present invention 1.Abscissa is wavelength (nm), and ordinate is spectrum.
Fig. 4 is the LED product of the embodiment of the present invention 1 and the aging comparison diagram of comparative example LED product.Abscissa is time (hour), and ordinate is the percentage (%) with aging front ratio.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
Embodiment 1, white-light LED structure, as shown in Figure 1-2.
A kind of white light LEDs, comprise chip 4, wire 6, the pedestal 3 being shaped with circuit, support bowl cup 5, base shape and support bowl cup suitable, laminating is placed in support bowl cup 5, chip 4 die bond is on pedestal 3, and chip 4 both positive and negative polarity is welded on the circuit of pedestal 3 by bonding wire spun gold 6 (wire); The circular membrane 1 that fluorescent material and silica-gel mixture are made buckles into edge on pedestal 3, and described circular membrane 1 is 3 millimeters with chip 4 upper surface distance; Described circular membrane there is silica gel hand-hole 2 two, diameter 2 millimeters, be located at circular membrane symmetrically and keep to the side place; Silica gel 7 is filled between chip 4 and circular membrane 1.Described chip 4 is high-power Sapphire Substrate gallium-nitride blue LED die.
Fluorescent material model used is 00902 (yellow green), grand Trading Co., Ltd; Silica gel model is OE-6550A/B, Dow Corning Corporation's product.
Manufacture method, comprises the following steps:
(1) by fluorescent material and silica gel 0.1: 0.8 mixing and stirring in mass ratio, pour into after vacuumizing and defoaming in a container, put into baking box baking-curing, baking temperature is 165 DEG C, and baking time is 20 minutes; Obtained thickness is 8 millimeters, the fluorescent material of solidification and silica-gel mixture.
(2) fluorescent material of solidification and silica-gel mixture are carried out cutting with the half of thickness, the latter half of the mixture of the fluorescent material after cutting and silica gel is cut into circle according to the diameter on edge on pedestal, obtaining thickness is 4 millimeters of circular membranes 1, silica gel hand-hole 2 two is beaten symmetrically, diameter 2 millimeters at the circular membrane place of keeping to the side.
(3) chip elargol die bond at the bottom of the pedestal being shaped with circuit in the middle of, chip both positive and negative polarity bonding wire connects the circuit on pedestal, pedestal is put into support bowl cup, the circular membrane that step (2) is obtained is fastened on edge on pedestal, circular membrane distance chip upper surface 3 millimeters, then by the silica gel hand-hole 2 of two on circular membrane, transparent silica gel is injected, until fill silica gel between chip and circular membrane.
(4) toasted 12 minutes in 100 DEG C by semi-finished product obtained for step (3), select lens 8 to encapsulate, covering is shaping.
The LED product luminescent spectrum figure of embodiment 1 is see Fig. 3.With the aging comparison diagram of comparative example LED product see Fig. 4.
Adopt the method for embodiment 1 to make 10 white light LEDs and become pipe, carry out performance measurement, average and list in table 1.
Comparative example: use Normal practice, get 10 the tube core direct die bonds identical with embodiment 1 in bowl cup, identical phosphor material powder and silica-gel mixture are directly coated on die surfaces, carry out encapsulation and obtain 10 white light LEDs one-tenth pipes, carry out performance measurement, average and list in table 1.
Table 1, LED die performance
| Mean value | Electric current | Voltage | Luminous flux | Luminous power | Light efficiency | Dominant wavelength |
| Embodiment 1 | 350 | 3.28 | 95.22 | 278.3 | 82.9 | 500.2 |
| Comparative example | 350 | 3.28 | 88.37 | 271.6 | 77.0 | 500 |
As can be seen from experimental result, the present invention improves 7.7% than comparative example luminous flux, light efficiency.
Embodiment 2, as described in Example 1 LED structure, difference is:
Described circular membrane 1 is 4 millimeters with chip 4 upper surface distance; Described circular membrane there are 3 silica gel hand-holes 2, diameter 1.5 millimeters, put centered by the circular membrane center of circle and arrange equally spacedly.
Embodiment 3, as described in Example 1 LED structure, the preparation method that difference is is as follows:
Fluorescent material and silica-gel mixture 0.2: 0.8 mixing in mass ratio in step (1), baking temperature is 175 DEG C, and baking time is 15 minutes; Step (4) selects mould bar to encapsulate, and covering is shaping.
Claims (4)
1. a white light emitting diode, comprise chip, wire, the pedestal being shaped with circuit, support bowl cup, it is characterized in that base shape and support bowl cup suitable, laminating is placed in support bowl cup (5), chip (4) die bond is on pedestal (3), and chip both positive and negative polarity is welded on the circuit of pedestal (3); The circular membrane (1) that fluorescent material and silica-gel mixture are made buckles into the upper edge of pedestal (3), and described circular membrane (1) is 2-4 millimeter with chip (4) upper surface distance; Described circular membrane there is silica gel hand-hole (2), between chip and circular membrane, fill silica gel;
Described circular membrane is in mass ratio (0.1-0.2): fluorescent material and silica gel mix by 0.8, this mixture is carried out vacuumizing and defoaming to be placed in container at 160-180 DEG C, to toast solidification in 15-20 minute, cut the fluorescent material after solidification and silica-gel mixture the latter half, cut into according to the diameter on edge on pedestal circular obtained;
The thickness of mixture in container of described fluorescent material and silica gel is 4-8 millimeter.
2. white light emitting diode as claimed in claim 1, is characterized in that the silica gel hand-hole on described circular membrane is 2 or 4, is located at circular membrane symmetrically and keeps to the side place.
3. white light emitting diode as claimed in claim 1, is characterized in that the silica gel hand-hole on described circular membrane is 3, with the circular membrane center of circle equidistant and 3 be arranged on circular membrane equally spacedly and keep to the side and locate.
4. a manufacture method for white light emitting diode, comprises the following steps:
(1) by fluorescent material and silica gel in mass ratio (0.1-0.2): 0.8 mixing and stirring, pour into after vacuumizing and defoaming in a container, put into baking box baking-curing, baking temperature is 160-180 DEG C, and baking time is 15-20 minute; The fluorescent material that must solidify and silica-gel mixture;
(2) fluorescent material of solidification and silica-gel mixture are carried out cutting with the half of thickness, the latter half of the mixture of the fluorescent material after cutting and silica gel is cut into circle according to the diameter on edge on pedestal, obtain circular membrane, beat silica gel hand-hole at the circular membrane place of keeping to the side;
(3) chip die bond is on the pedestal being shaped with circuit, chip both positive and negative polarity bonding wire connects the circuit on pedestal, pedestal is put into support bowl cup, the circular membrane that step (2) is obtained is fastened on edge on pedestal, circular membrane distance chip upper surface 2-4 millimeter, then silica gel is injected, until fill silica gel between chip and circular membrane by the silica gel hand-hole on circular membrane;
(4) semi-finished product obtained for step (3) are toasted 10-15 minute in 100 DEG C, select lens or mould bar to encapsulate, covering is shaping.
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| CN105336835A (en) * | 2015-11-27 | 2016-02-17 | 宏齐光电子(深圳)有限公司 | LED packaging structure and packaging method thereof |
| CN105514248A (en) * | 2016-01-06 | 2016-04-20 | 宏齐光电子(深圳)有限公司 | High white light and low light decay LED and preparation method thereof |
| CN106992260A (en) * | 2017-03-10 | 2017-07-28 | 上海小糸车灯有限公司 | A kind of OLED car lights and its OLED screen mounting structure and installation method |
| CN108511430A (en) * | 2018-04-28 | 2018-09-07 | 中国人民大学 | A kind of crystallo-luminescence paster LED lamp bead and preparation method thereof |
| CN109166957B (en) * | 2018-08-03 | 2020-05-22 | 湖南华特光电科技有限公司 | LED lamp packaging process |
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Effective date of registration: 20151111 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee after: Shandong Inspur Huaguang Optoelectronics Co., Ltd. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee before: Shandong Huaguang Photoelectronic Co., Ltd. |
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Effective date of registration: 20200918 Address after: Song Ling Zhen Development Zone of Wujiang District of Suzhou city in Jiangsu province 215200 Jia Pu Bridge Patentee after: WUJIANG CITY MINFU CABLE ACCESSORIES FACTORY Address before: 261061 No. 9, Golden Road, hi tech Zone, Shandong, Weifang Patentee before: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd. |
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