CN105914258B - Semiconductor structure and the method for preparing semiconductor structure - Google Patents
Semiconductor structure and the method for preparing semiconductor structure Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 78
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention proposes semiconductor structure and the method for preparing semiconductor structure.Specifically, this method includes：(1) substrate is provided；(2) surface sets graphene layer over the substrate；And (3) in the upper surface of the graphene layer by sputtering sedimentation, form the first nitride semiconductor layer, to obtain the semiconductor structure, first nitride semiconductor layer has crystal preferred orientation.Thus, it is possible to reduce manufacturing cost, simplify preparation process, and obtain the first nitride semiconductor layer with crystal preferred orientation.
Description
Technical field
The present invention relates to semiconductor technology and field of semiconductor manufacture, specifically, the present invention relates to semiconductor structures
And the method for preparing semiconductor structure.
Background technology
In technical field of semiconductors, the substrate of solar cell either light emitting diode (LED) is mostly glass or metal.
Using glass as substrate, using the translucency of glass, and it is of low cost therefore have a good application prospect；Using metal
As substrate, then the good feature of metallic conduction performance can be utilized to improve device performance or served as a contrast using flexible metal film
Bottom prepares flexible semiconductor device.However, for the solar cell or LED of better performances, semiconductor material therein
The general requirement of material has preferred orientation for monocrystalline or the good polycrystalline of crystal orientation consistency, i.e., crystal therein.It can adopt at present
With the method for epitaxial growth or sputtering sedimentation semiconductive thin film, semiconductive thin film prepared by these methods are obtained in glass surface
Or it is non-crystalline material or the polycrystalline material for no crystal preferred orientation, it is difficult to obtain the good semiconductor of crystal preferred orientation
Film, it is difficult to meet the requirement of high performance solar cells or light emitting diode.
Therefore, the semiconductor technology that nitride semi-conductor material is prepared currently based on glass or metal substrate still needs to be changed
Into.
Invention content
A kind of two-dimensional layer material of the graphene as unique properties, is widely used in such as solar cell in recent years
It waits in semiconductor devices or semiconductor structure.Inventor passes through further investigation and many experiments are found, in the semiconductor structure
Graphene layer is introduced, the characteristic using graphene with two-dimensional layered structure, meanwhile, pass through suitable sputter deposition craft, energy
Enough nitride semiconductor layer of the induction production with crystal preferred orientation.Can be prepared on glass or metal substrate has
The nitride film of crystal preferred orientation is partly led so as to be used to prepare high performance solar cell, light emitting diode etc.
Body device.In addition, the lattice constant by controlling element nitride crystal, makes it have between common semiconductor crystalline material preferable
Lattice Matching degree, the crystal that thereby may be ensured that the semiconductor layer being grown on the element nitride crystal layer has had preferentially takes
To.
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, the present invention
One purpose is to propose a kind of method for preparing semiconductor structure, the method that this method uses sputtering sedimentation, by introducing stone
Black alkene layer and the control to sputtering condition, can form the nitride semiconductor layer with crystal preferred orientation.It is solid with utilizing
Phase epitaxy growing technology and metal organic chemical vapor deposition technology are compared, and sputtering sedimentation has of low cost, easy to operate
The advantages that.
In one aspect of the invention, the present invention proposes a kind of method for preparing semiconductor structure.This method includes：
(1) substrate is provided；(2) surface sets graphene layer over the substrate；And (3) pass through in the upper surface of the graphene layer
Sputtering sedimentation forms the first nitride semiconductor layer, to obtain the semiconductor structure, first nitride semiconductor layer
With crystal preferred orientation.Thus, it is possible to reduce manufacturing cost, simplify preparation process, and obtain with crystal preferred orientation
Nitride semiconductor layer.Graphene layer and appropriate sputtering condition can induce the first nitride semiconductor layer to form crystal
Preferred orientation, also, the first nitride semiconductor layer with crystal preferred orientation being capable of remaining of induced synthesis on it half
The formation of conductor layer makes the lattice arrangement in the semiconductor layer to be formed also have preferred orientation.Meanwhile first nitride partly lead
Body layer can also stop in substrate in impurity diffusion to remaining semiconductor layer, so as to be effectively improved the property of semiconductor structure
Energy.
According to an embodiment of the invention, step (3) further comprises：By sputtering sedimentation the graphene layer upper table
Face forms nitride-based semiconductor mixture, the first annealing is carried out to the nitride-based semiconductor mixture, to obtain
State the first nitride semiconductor layer.Thus, it is possible to be further simplified the preparation process of sputter deposition process, reduce to depositing device
Requirement, so as to further reduce production cost.
According to an embodiment of the invention, this method further comprises：(4) in first nitride semiconductor layer far from institute
The side for stating graphene layer forms the second nitride semiconductor layer, and there is second nitride semiconductor layer crystal preferentially to take
To.Thus, it is possible to using the crystal preferred orientation of the first nitride semiconductor layer, the matter of the second nitride semiconductor layer is improved
Amount.
According to an embodiment of the invention, this method further comprises；(5) to the substrate, the graphene layer, described
Mononitride semiconductor layer and second nitride semiconductor layer carry out the second annealing.Thus, it is possible to pass through second
Annealing further improves the crystalline quality of the first nitride semiconductor layer and the second nitride semiconductor layer.
According to an embodiment of the invention, first nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one of.Those skilled in the art can select above-mentioned material to form the first nitride semiconductor layer according to actual demand,
Thus, it is possible to further improve the performance of the semiconductor structure.
According to an embodiment of the invention, second nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one, the composition of the second nitride semiconductor layer composition and first nitride semiconductor layer differs.As a result,
The performance of the semiconductor structure can be further improved.
According to an embodiment of the invention, the substrate is formed by glass or metal.According to embodiments of the present invention half
Glass or metal may be used as substrate material in conductor structure, has light transmission so as to be prepared using glass substrate
Semiconductor structure or obtain the good semiconductor structure of electric property using the preferable electric conductivity of metal substrate.
According to an embodiment of the invention, the glass top surface has the coat of metal.Thus, it is possible to directly in the coat of metal
The upper method by chemical vapor deposition forms graphene layer, so as to be conducive to improve between graphene layer and glass substrate
Bond quality, and then the performance of the semiconductor structure can be improved.
According to an embodiment of the invention, the metal includes high temperature alloy.On the one hand it can prevent metal substrate from existing as a result,
The fusing of subsequent pyroprocess, on the other hand can alleviate the diffusion of substrate metal element in the high temperature environment, and then can be to prevent
Only the metallic element in substrate spreads and the performance of the semiconductor structure is adversely affected.
According to an embodiment of the invention, the upper surface of the metal or the coat of metal is contained in Ni, Co, Cu, Fe
At least one.Above-mentioned metal has preferable catalytic action to forming graphene, is conducive to raising as a result, and utilizes chemical vapor deposition
The quality of graphene layer that product is formed on.
According to an embodiment of the invention, the upper surface of the metal or the coat of metal has texture structure.As a result, may be used
The texture structure of random distribution is deviated considerably from the crystal orientation distribution using crystal grain on metal or coat of metal upper surface, is lured
Leading the graphene layer being formed thereon also has more orderly structure, and then can improve the quality of graphene layer, to obtain
Obtain the first nitride semiconductor layer and the second nitride semiconductor layer with more preferable crystalline quality.
According to an embodiment of the invention, the graphene layer contains 1~10 layer graphene individual layer.It is thin and ordered arrangement
Graphene layer can effectively induce the first nitride semiconductor layer to form more orderly crystal preferred orientation, graphene individual layer
The graphene layer of the number of plies within the above range can further improve the adjustment effect to the performance of semiconductor structure.
According to an embodiment of the invention, the sputtering sedimentation is magnetron sputtering deposition or ion beam sputter depositing.Utilize magnetic
Control sputtering or ion beam sputtering can preferably control the crystal structure that deposition rate and deposition are formed, so as to be conducive to shape
Into the first nitride semiconductor layer with crystal preferred orientation.
According to an embodiment of the invention, the sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.
Thus, it is possible to using pulsed sputtering sedimentation or the rate of ion beam aided sputtering deposition control deposition, the first of acquisition is improved
The crystalline quality of nitride semiconductor layer.
According to an embodiment of the invention, the sputter rate of the sputtering sedimentation is less than 100nm/ hours.When sputter rate is small
When above-mentioned numerical value, the crystalline quality of the first nitride semiconductor layer of sputtering sedimentation acquisition can be significantly improved, and then can be with
Further improve the performance of the semiconductor structure.
According to an embodiment of the invention, underlayer temperature is not less than 300 degrees Celsius during the sputtering sedimentation.It is thus, it is possible to simple
Just by being heated to substrate, the structure with crystal preferred orientation is obtained, so as to reduce deposition step to equipment
Requirement, simplify preparation process, reduce production cost.
According to an embodiment of the invention, the temperature of first annealing and the second annealing is separately
600~1200 degrees Celsius.Thus, it is possible to further improve crystalline quality.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.It according to an embodiment of the invention, should be partly
Conductor structure includes：Substrate；Graphene layer, the graphene layer are arranged on the upper surface of the substrate；With the first nitride
Semiconductor layer, first nitride semiconductor layer are formed in the upper surface of the graphene layer, and first nitride
Semiconductor layer has crystal preferred orientation.Graphene layer can induce the first nitride semiconductor layer to form preferentially taking for crystal
To, also, the first nitride semiconductor layer with crystal preferred orientation can be in remaining structure of induced synthesis on it
Lattice arrangement also has preferred orientation, meanwhile, the first nitride semiconductor layer can also stop the diffusion of impurity in substrate, can
To be effectively improved the performance of the semiconductor structure, so as to be conducive to later use semiconductor structure composition solar cell or hair
The structures such as optical diode.
According to an embodiment of the invention, the substrate is formed by glass or metal.According to embodiments of the present invention half
Glass or metal may be used as substrate material in conductor structure, has light transmission so as to be prepared using glass substrate
Semiconductor structure or obtain the good semiconductor structure of electric property using the preferable electric conductivity of metal substrate.
According to an embodiment of the invention, the metal includes high temperature alloy.On the one hand it can prevent metal substrate from existing as a result,
The fusing of subsequent pyroprocess, on the other hand can alleviate the diffusion of substrate metal element in the high temperature environment, and then can be to prevent
Only the metallic element in substrate spreads and the performance of the semiconductor structure is adversely affected.
According to an embodiment of the invention, the glass top surface has the coat of metal.Thus, it is possible to directly in the coat of metal
The upper method by chemical vapor deposition forms graphene layer, so as to be conducive to improve between graphene layer and glass substrate
Bond quality, and then the performance of the semiconductor structure can be improved.
According to an embodiment of the invention, the upper surface of the metal and the coat of metal is contained in Ni, Co, Cu, Fe
At least one.Above-mentioned metal has preferable catalytic action to forming graphene, is conducive to raising as a result, and utilizes chemical vapor deposition
The quality of graphene layer that product is formed on.
According to an embodiment of the invention, the upper epidermis of the metal and the coat of metal has texture structure.As a result,
The crystal orientation distribution of crystal grain on metal or coat of metal upper surface can be utilized to deviate considerably from the texture structure of random distribution,
The graphene layer of induced synthesis on it also has more orderly structure, and then can improve the quality of graphene layer, so as to
Obtain the first nitride semiconductor layer and the second nitride semiconductor layer with more preferable crystalline quality.
According to an embodiment of the invention, first nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one.Those skilled in the art can select the specific material of the first nitride semiconductor layer according to actual demand, as a result,
The performance of the semiconductor structure can be further improved.
According to an embodiment of the invention, the semiconductor structure further comprises：Second nitride semiconductor layer, described
Diammine semiconductor layer is formed in the side of first nitride semiconductor layer far from the graphene layer, the nitride
Semiconductor layer has crystal preferred orientation.Thus, it is possible to it is lured using the first nitride semiconductor layer with crystal preferred orientation
The formation of the second nitride semiconductor layer is led, so as to improve the crystalline quality of the second nitride semiconductor layer.
According to an embodiment of the invention, second nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one, the composition of the second nitride semiconductor layer composition and first nitride semiconductor layer differs.As a result,
The performance of the semiconductor devices can be further improved.
According to an embodiment of the invention, the half of the XRD diffraction maximums of the first nitride semiconductor layer (0002) crystal face is high
It is wide to be less than 5 degree.The halfwidth of control XRD diffraction maximums is conducive to improve the crystalline quality of the first nitride semiconductor layer.
According to an embodiment of the invention, first nitride semiconductor layer is formed by sputtering sedimentation.As a result, may be used
While the first nitride semiconductor layer quality is ensured, to reduce manufacturing cost, simplify preparation process.
According to an embodiment of the invention, first nitride semiconductor layer is formed by sputtering sedimentation and annealing
's.Thus, it is possible to be further simplified the preparation process of sputter deposition process, reduce the requirement to depositing device, so as into
One step reduces production cost.
According to an embodiment of the invention, second nitride semiconductor layer is formed by sputtering sedimentation.As a result, may be used
While the second nitride semiconductor layer quality is ensured, to reduce manufacturing cost, simplify preparation process.
According to an embodiment of the invention, the second nitride semiconductor layer is formed by sputtering sedimentation and annealing.
Thus, it is possible to be further simplified the preparation process of sputter deposition process, the requirement to depositing device is reduced, so as to further
Reduce production cost.
According to an embodiment of the invention, the sputtering sedimentation is magnetron sputtering deposition or ion beam sputter depositing.Utilize magnetic
Control sputtering or ion beam sputtering can preferably control the crystal structure that deposition rate and deposition are formed, so as to be conducive to shape
Into the structure with crystal preferred orientation.
According to an embodiment of the invention, the sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.
Thus, it is possible to using pulsed sputtering sedimentation or the rate of ion beam aided sputtering deposition control deposition, crystalline quality is improved.
According to an embodiment of the invention, underlayer temperature is more than 300 degrees Celsius during the sputtering sedimentation.Simplify as a result, and prepare
Technique reduces production cost.
According to an embodiment of the invention, the sputter rate of the sputtering sedimentation is less than 100nm/ hours.When sputter rate is small
When above-mentioned numerical value, the crystalline quality of sputtering sedimentation acquisition can be significantly improved, and then the semiconductor junction can be further improved
The performance of structure.
Description of the drawings
Fig. 1 is the flow chart of the method according to an embodiment of the invention for preparing semiconductor structure；
Fig. 2 is the flow chart of the method in accordance with another embodiment of the present invention for preparing semiconductor structure；
Fig. 3 is the structure diagram of semiconductor structure according to an embodiment of the invention；And
Fig. 4 is the structure diagram of semiconductor structure in accordance with another embodiment of the present invention.
Reference sign：
100：Substrate；200：Graphene layer；300：First nitride semiconductor layer；400：Second nitride semiconductor layer.
Specific embodiment
The embodiment of the present invention is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
In the description of the present invention, it is to be understood that the orientation or position relationship of the instructions such as term " on ", " under " are base
In orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description rather than instruction or imply
Signified device or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that this
The limitation of invention.
In one aspect of the invention, the present invention proposes a kind of method for preparing semiconductor structure.In general, using sputtering
Method be hardly formed crystal preferred orientation, general multiform is into polycrystalline or impalpable structure.Inventor by further investigation and
Many experiments are found, by being served as a contrast when substrate is firstly introduced into graphene layer structure and reduces sputter rate, raising sputtering
The modes such as bottom temperature are handled by subsequent anneal, improve the crystalline quality for the nitride-based semiconductor that sputtering is formed, Ke Yishi
Now crystal preferred orientation is obtained using sputtering.The two-dimensional structure of graphene layer is utilized during this, it can be to nitride-based semiconductor
Growth form inducing action, and the anisotropy of nitride semiconductor crystal speed of growth in epitaxial growth is utilized, i.e.,
For nitride semiconductor thin film in deposition, the deposition growth rate of certain crystal orientation is significantly faster than that other crystal faces, and sputter in high temperature
Nitride-based semiconductor has apparent crystal recrystallization in deposition and annealing process, and the big crystal grain with preferred orientation is constantly long
Greatly so that the little crystal grain of non-preferred orientation is fewer and fewer to be even disappeared completely.In the present invention, " preferred orientation of crystal " refers to crystalline substance
Body has preferred orientation, i.e. a certain range of crystal in the first nitride semiconductor layer and the second nitride semiconductor layer
Orientation reaches unanimity, wherein also including monocrystalline (being orientated everywhere in crystal completely the same).Specifically, implementation according to the present invention
Example, with reference to figure 1, this method includes：
S100：Substrate is provided
According to an embodiment of the invention, in this step, substrate is provided to form semiconductor structure.Specifically, substrate
Can be formed by glass or metal.Glass or metal conduct may be used in semiconductor structure according to embodiments of the present invention
Substrate material, so as to using glass substrate prepare with light transmission semiconductor structure or using metal substrate compared with
Good electric conductivity obtains the good semiconductor structure of electric property.
Specifically, when using glass as substrate, glass top surface can have the coat of metal.Thus, it is possible to directly
Graphene layer is formed by the method for chemical vapor deposition on the coat of metal, so as to be conducive to improve graphene layer and glass
Bond quality between substrate, and then the performance of the semiconductor structure can be improved.According to an embodiment of the invention, using metal
During as substrate, high temperature alloy can be selected to form above-mentioned substrate.Metal substrate on the one hand can be prevented in subsequent height as a result,
On the other hand warm process melt can alleviate the diffusion of substrate metal element in the high temperature environment, and then can prevent in substrate
Metallic element diffusion and the performance of the semiconductor structure is adversely affected.
According to an embodiment of the invention, the upper surface of above-mentioned metal or the coat of metal can be containing in Ni, Co, Cu, Fe
At least one.For example, the upper surface of metal or the coat of metal can be the alloy formed by containing above-mentioned one or more elements
It forms.Alloy containing above-mentioned metallic element has catalytic action to forming graphene layer, is conducive to improve utilizationization as a result,
Learn the quality of graphene layer that vapor deposition is formed on.
According to an embodiment of the invention, the upper surface of above-mentioned metal or the coat of metal can have texture structure.As a result, may be used
To deviate considerably from the texture structure of random distribution using polycrystal distribution of orientations on metal or coat of metal upper surface, shape is induced
Also there is more orderly structure, and then the quality of graphene layer can be improved into graphene layer on it, to be had
There is the first nitride semiconductor layer of more preferable crystalline quality.It should be noted that form the specific method of above-mentioned texture structure not
It is particularly limited, those skilled in the art can select known method, the gold in metal substrate or glass substrate upper surface
Belong to and form texture structure on coating.For example, according to an embodiment of the invention, can by deformation texture, i.e., plastic deformation and
The method of annealing, forming upper surface has the metal substrate of texture structure.It specifically, can be first to the metal material of composition substrate
Material carries out plastic deformation, for example, metal material rolled flakiness, then by recrystallization annealing, surface forms texture on it
Structure.Alternatively, surface the coat of metal can be formed, such as auxiliary by ion beam by the method for sputtering sedimentation on a glass substrate
Deposition technique is helped, by adjusting the condition of sputtering sedimentation, using the anisotropy of coat of metal growth during sputtering sedimentation, by slow
Slow deposition rate or the methods of to silicon, forms the coat of metal with texture structure.
It will be appreciated to those of skill in the art that in order to improve the quality of the semiconductor structure of preparation, carrying out subsequently
Before step, substrate can be cleaned, to remove the impurity such as the grease of substrate surface, dust, after improving
The deposition effect of continuous step.
S200：Graphene layer is set
According to an embodiment of the invention, in this step, graphene layer is set in the upper surface of substrate.Specifically, graphite
Alkene layer can be formed directly into the upper surface of substrate by the method for chemical vapor deposition；Alternatively, graphene can be utilized to shift
The graphene layer formed in other substrate material surfaces is transferred to the upper surface of substrate according to embodiments of the present invention by technology
On.Specifically, can metal substrate or with the coat of metal glass substrate upper surface, it is direct by chemical vapor deposition
Form graphene layer.At this point, it is preferred that the upper surface of metal substrate or the coat of metal has texture structure.It is taken with certain crystal
To texture structure be conducive to improve the order degree of graphene layer that is formed thereon, and then follow-up first nitridation can be improved
The crystalline quality of object semiconductor layer and semiconductor layer.Other embodiments according to the present invention can also be served as a contrast at other in advance
Bottom surface forms graphene layer, then using transfer techniques, transfers them to substrate surface according to embodiments of the present invention.This
When, substrate can be the glass without the coat of metal.
According to an embodiment of the invention, graphene layer can have 1~10 layer of graphene individual layer.It is thin and ordered arrangement
Graphene layer can effectively induce the first nitride semiconductor layer to form more orderly crystal preferred orientation, realize to semiconductor
The performance of structure is adjusted.It should be noted that in the present invention, term " graphene individual layer " refers in particular to monoatomic layer graphite
Graphite-structure in alkene, i.e. graphene only containing one layer of ordered arrangement, and term " graphene layer " can be graphene individual layer,
It can be the multi-layer graphene of multiple graphene monoatomic layers composition.
S300：First nitride semiconductor layer is set
According to an embodiment of the invention, in this step, in the upper surface of graphene layer first is formed by sputtering sedimentation
Nitride semiconductor layer.Thus, it is possible to reduce manufacturing cost, simplify preparation process, and obtain dilute with crystal preferred orientation
Native oxide structure.
Sputter deposition process is described in detail below according to specific embodiments of the present invention.
According to an embodiment of the invention, the first nitride semiconductor layer can contain AlN, GaN, AlGaN and InGaN
At least one.Above-mentioned nitride semi-conductor material has good physical and chemical performance, suitable for preparing semiconductor photoelectric device.For example,
According to an embodiment of the invention, AlN may be used and form the first nitride semiconductor layer.The first nitride formed using AlN
Semiconductor layer can not only utilize the property such as broad-band gap, good uv transmittance and the high breakdown field strength that AlN materials have
Can, the performance of the semiconductor structure of formation is improved, is also used as subsequent growth other nitride semi-conductor materials (second nitridations
Object semiconductor layer) good substrate because compared with the substrate of the materials such as metal, AlN has with remaining nitride semi-conductor material
There is better lattice matching property.
Specifically, according to an embodiment of the invention, magnetron sputtering deposition or ion beam sputter depositing may be used and form the
Mononitride semiconductor layer.Inventor has found that not only graphene layer can induce the first nitride-based semiconductor by many experiments
Layer forms the preferred orientation of crystal, and the rate of sputtering sedimentation also has the crystal structure of the first nitride semiconductor layer of formation
Great influence.Sputtering sedimentation speed advantageously forms the first nitride semiconductor layer with crystal preferred orientation slowly.Utilize magnetic
Control sputtering or ion beam sputtering can preferably control deposition rate, so as to control the crystalline substance of the nitride-based semiconductor of deposition
Body structure is formed with crystal preferred orientation and the first nitride semiconductor layer of polycrystalline of non-confusion arrangement.Preferably, according to
The embodiment of the present invention, sputtering sedimentation can also be pulsed sputtering sedimentation or ion beam aided sputtering deposition.Pulsed sputters
Deposition replaces DC power supply to carry out sputtering sedimentation as a result of the pulse power, can effectively control deposition velocity, enhanced deposition
The migration of atom promotes the formation of crystal preferred orientation；Using ion beam aided sputtering deposition, it is heavy to be bombarded using Assisted by Ion Beam
Product substrate (i.e. metal or glass substrate), can improve the energy and stability of deposition aggregated particle, while eliminate deposition table
The defects of face and the crystal grain of non-preferred orientation are conducive to improve the quality for the first nitride semiconductor layer that deposition is formed, are formed
The first nitride semiconductor layer with preferred orientation.Specifically, according to an embodiment of the invention, sputtering sedimentation can be controlled
Sputter rate is less than 100nm/ hours；Other embodiments according to the present invention, the sputter rate that can control sputtering sedimentation are small
In 30nm/ hours.Inventor has found by many experiments, when sputter rate is less than above-mentioned numerical value, can form crystalline quality
The first higher nitride semiconductor layer, deposition rate is lower, then the preferred orientation of the crystal obtained is better.Under these conditions
The halfwidth of the XRD diffraction maximums of the first nitride semiconductor layer (0002) crystal face formed can be less than 5 degree.It is thus, it is possible to sharp
The crystalline quality of the first nitride semiconductor layer obtained is improved with pulsed sputtering sedimentation or ion beam aided sputtering deposition.
Inventor has found by many experiments, for conventional magnetron sputtering, its deposition speed when depositing the first nitride-based semiconductor
Rate easily reach 1000nm/ hours it is even higher, at this time be difficult obtain with preferred orientation the first nitride semiconductor layer,
It generally requires, using pulsed magnetron sputtering or ion beam aided sputtering deposition technique, its deposition rate to be greatly reduced to
100nm/ hours hereinafter, can then obtain the first nitride semiconductor layer with preferred orientation.
According to an embodiment of the invention, in this step, it can be formed by being heated in sputtering process to substrate
The first nitride semiconductor layer with crystal preferred orientation.Inventor is by many experiments discovery, the substrate temperature of sputtering sedimentation
Degree is higher, then the preferred orientation of crystal is better.Specifically, it can be not less than underlayer temperature when sputtering sedimentation by heating
300 degrees Celsius.Inventor has found by further investigation and many experiments, for the first nitrogen of nitride semi-conductor material formation
Compound semiconductor layer, when underlayer temperature is less than 300 degrees Celsius when deposited, the first nitride semiconductor layer of formation is mostly polycrystalline
Structure.When underlayer temperature is increased to 300~500 degrees Celsius, be conducive to make the crystal to be formed that there is preferred orientation.Also,
Sputtering sedimentation is carried out under above-mentioned heating temperature, metal or glass substrate will not be impacted.And the heating of above-mentioned temperature
The graphene layer of substrate will not only be impacted, but also it is organic miscellaneous to remove the part adsorbed among graphene layer
Matter or the impalpable structure formed in chemical vapor deposition processes, so as to further improve the orderly of graphene layer
Degree.Thus, it is possible to easily by being heated to substrate, the first nitride semiconductor layer of acquisition is heavy so as to reduce
Requirement of the product step to equipment, simplifies preparation process, reduces production cost.
Other embodiments according to the present invention, in this step, can also be by normal temperatures sputtering target
Deposition, for example, carrying out magnetron sputtering, substrate does not heat, deposits to be formed with polycrystalline or amorphous knot in the upper surface of graphene layer
The nitride mixture of structure.It will be appreciated to those of skill in the art that foregoing " silicon ", be to substrate into
Row heat treatment, and since the graphene layer being formed thereon contains only~10 layers of single-layer graphene, and graphene is the good of heat
Conductor, therefore substrate is heated, i.e., it also includes and graphene layer formed on the upper surface of the substrate is heated.It needs to illustrate
, in the present invention, term " nitride mixture " refers in particular to carry out target under room temperature or low temperature sputtering sedimentation formation, tool
There is polycrystalline structure, but without preferable preferred orientation, i.e. crystal lattice orientation tends not to consistent structure.Then, to the rare earth oxygen of formation
Compound mixture carries out the first annealing, it is made to be converted into the crystal structure with preferred orientation, so as to improve rare earth
The crystalline quality of oxide mixture obtains the first nitride semiconductor layer according to embodiments of the present invention.Inventor is through excessive
Amount experiment finds that the time of annealing is longer, then the crystal quality of the first nitride semiconductor layer is better.Thus, it is possible to easily
First nitride semiconductor layer is obtained by annealing, is conducive to further reduce requirement of the deposition step to equipment, simplifies and prepare
Technique reduces production cost.Still other embodiments according to the present invention, in this step, can also be by high temperature to target
Material carries out sputtering sedimentation, for example, underlayer temperature can be made Celsius for 300-500 silicon during magnetron sputtering
Degree left and right, deposits to form the first nitride semiconductor layer with crystal preferred orientation in the upper surface of graphene layer, then right
The first nitride semiconductor layer formed carries out the first annealing, so as to further improve the first nitride semiconductor layer
Crystalline quality, obtain high quality have crystal preferred orientation even high quality mono-crystalline structures.It is more according to the present invention
Embodiment, the temperature of the first annealing can be 600~1200 degrees Celsius.Other embodiments according to the present invention, first
The temperature of annealing can also be 800~1000 degrees Celsius.Thus, it is possible to further improve the first nitride semiconductor layer
Crystalline quality.It will be appreciated to those of skill in the art that when needing to make annealing treatment the first nitride semiconductor layer,
Need to use heat safe metal as substrate.
According to an embodiment of the invention, in order to further improve the performance for the semiconductor structure that the above method is utilized to prepare,
According to an embodiment of the invention, with reference to figure 2, this method can further include：
S400：Second nitride semiconductor layer is set
According to an embodiment of the invention, in this step, the second nitrogen is formed in the upper surface of the first nitride semiconductor layer
Compound semiconductor layer.In other words, in the first nitride semiconductor layer second is formed far from the side of substrate and graphene layer
Nitride semiconductor layer.Specifically, the second nitride semiconductor layer can be containing AlN, GaN, AlGaN and InGaN at least
One of.Second nitride semiconductor layer is formed to be differed with the composition of first nitride semiconductor layer.Due to the first nitridation
Object semiconductor layer has preferable crystal preferred orientation, therefore forms the second nitride on the first nitride semiconductor layer and partly lead
During body layer, inducing action can be played to the second nitride semiconductor layer, make the crystalline substance in the second nitride semiconductor layer to be formed
Grillages row also have preferred orientation.Also, since the first nitride semiconductor layer and the second nitride semiconductor layer are nitrogen
What compound semi-conducting material was formed, therefore the second nitride semiconductor layer is formed on the first nitride semiconductor layer, it is and straight
It connects and forms the second nitride semiconductor layer on the metallic substrate and compare, the Lattice Matching degree between double-layer structure is more preferable, as a result,
The semiconductor structure of this method formation can be optimized.
It should be noted that in this step, the specific method for forming the second nitride semiconductor layer is not particularly limited.
For example, sputtering sedimentation and annealing formation, which may be used, to be had the second nitride semiconductor layer of preferred orientation or directly passes through
High temperature sputtering sedimentation is formed, and can also be formed using mocvd process.
In order to further improve the crystal preferred orientation of each layer in the semiconductor structure, this method may further include
Two annealing.It according to some embodiments of the present invention, can after formation of the second nitride semiconductor layer, to substrate, graphene
Layer, the first nitride semiconductor layer and the second nitride semiconductor layer carry out the second annealing.Specifically, according to the present invention
Embodiment, second annealing temperature can be 600~1200 degrees Celsius.Other embodiments according to the present invention, the
The temperature of two annealings can also be 800~1000 degrees Celsius.Thus, it is possible to further improve the first nitride semiconductor layer
With the crystalline quality of the second nitride semiconductor layer, improve its crystal preferred orientation.Inventor has found by many experiments, when long
Between annealing can recrystallize the first nitride semiconductor layer and the second nitride semiconductor layer, form crystal preferentially
Orientation.Therefore, the crystalline that the second annealing is conducive to improve nitride semi-conductor material is carried out to above-mentioned semiconductor structure
Amount.It will be appreciated by persons skilled in the art that the method that can also utilize sputtering forms do not have preferentially first on substrate
The first nitride semiconductor layer and the second nitride semiconductor layer of orientation recycle prolonged second annealing to make
First nitride semiconductor layer and the second nitride semiconductor layer form the preferred orientation of crystal, and such situation is also the present invention's
Among protection domain.It should be noted that in the present invention, in " prolonged second annealing ", the second annealing
The specific time is not particularly limited, as long as the first nitride semiconductor layer and the second nitrogen with crystal preferred orientation can be formed
Compound semiconductor layer or the crystal structure quality that above structure can be improved.According to a particular embodiment of the invention,
The specific time of two annealings can be 1~20 hour.Annealing temperature is higher, then annealing time can suitably shorten.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to an embodiment of the invention, it refers to
Fig. 3, the semiconductor structure include：Substrate 100,200 and first nitride semiconductor layer 300 of graphene layer.Wherein, graphene
Layer 200 is formed on the upper surface of substrate 100, and the first nitride semiconductor layer 300 is formed in the upper surface of graphene layer 200,
And first nitride semiconductor layer 300 have crystal preferred orientation.The first nitride semiconductor layer with crystal preferred orientation
Be conducive to the electronic devices such as later use semiconductor structure composition solar cell, light emitting diode.
Specifically, substrate 100 can be formed by glass or metal.Specifically, when use glass is as substrate 100
When, glass top surface can have the coat of metal.Thus, it is possible to pass through the method for chemical vapor deposition directly on the coat of metal
Graphene layer 200 is formed, so as to be conducive to improve the bond quality between graphene layer 200 and glass substrate, and then can be with
Improve the performance of the semiconductor structure.According to an embodiment of the invention, during using metal as substrate 100, high temperature can be selected
Alloy forms above-mentioned substrate.On the one hand it can prevent metal substrate from being melted in subsequent pyroprocess as a result, it on the other hand can be with
Alleviate the diffusion of substrate metal element in the high temperature environment, and then can prevent the metallic element in substrate from spreading and partly being led to this
The performance of body structure adversely affects.According to an embodiment of the invention, the upper surface of above-mentioned metal or the coat of metal can contain
There are at least one of Ni, Co, Cu, Fe.Specifically, the upper surface of metal or the coat of metal can be to contain Ni, Co, Cu, Fe
In one or more formation alloy.Alloy containing above-mentioned metallic element has catalytic action to forming graphene layer, by
This, is conducive to improve the quality of graphene layer 200 being formed on using chemical vapor deposition.Implementation according to the present invention
The upper surface of example, above-mentioned metal or the coat of metal can have texture structure.Thus, it is possible to using on metal or the coat of metal
Polycrystal distribution of orientations deviates considerably from the texture structure of random distribution, the graphene layer 200 of induced synthesis on it on surface
With more orderly structure, and then the quality of graphene layer 200 can be improved, to obtain with more preferable crystalline quality
Mononitride semiconductor layer 300.The method for forming above-mentioned texture structure can be with the previously described side for preparing semiconductor structure
In method formed texture structure method have the advantages that identical feature and, details are not described herein.
It should be noted that graphene layer 200 can have in the previously described method for preparing semiconductor structure
Graphene layer identical feature and advantage, details are not described herein.Thus, it is possible to the orderly knot having using graphene layer 200
Structure, the first nitride semiconductor layer 300 of induced synthesis on it forms the structure with crystal preferred orientation, so as to carry
The performance of the high semiconductor structure.
According to an embodiment of the invention, the concrete composition of the first nitride semiconductor layer 300 can have with it is previously mentioned
The method for preparing semiconductor structure in the identical feature and advantage of the first nitride semiconductor layer, details are not described herein.
For example, the first nitride semiconductor layer 300 can contain at least one of AlN, GaN, AlGaN and InGaN.According to the present invention
Specific embodiment, may be used AlN formed the first nitride semiconductor layer.First nitride semiconductor layer 300 can be logical
Cross sputtering sedimentation formation.In general, be hardly formed crystal preferred orientation structure using the method for sputtering, general multiform into polycrystalline or
Impalpable structure.Inventor by further investigation and many experiments find, by reduce sputter rate, improve sputter when substrate
The modes such as temperature are handled by subsequent anneal, are improved the crystalline quality for the nitride-based semiconductor that sputtering is formed, can be realized
Obtain crystal preferred orientation structure on the metallic substrate using sputtering sedimentation.Thus, it is possible to ensureing nitride semiconductor layer matter
While amount, manufacturing cost is reduced, simplifies preparation process.Specifically, the first nitridation can be formed by pulsed sputtering sedimentation
Object semiconductor layer 300.For example, magnetron sputtering deposition or ion beam sputter depositing the first nitride semiconductor layer of formation may be used
300.Inventor has found that the rate of sputtering sedimentation has weight to the crystal structure of the nitride-based semiconductor of formation by many experiments
It influences.Sputtering sedimentation speed advantageously forms the first nitride semiconductor layer 300 slowly.It is splashed using magnetron sputtering or ion beam
Deposition rate can preferably be controlled by penetrating, and so as to control the crystal structure of the nitride-based semiconductor of deposition, form the first nitrogen
Compound semiconductor layer.Specifically, according to an embodiment of the invention, the sputter rate that can control sputtering sedimentation is small less than 100nm/
When；Other embodiments according to the present invention can control the sputter rate of sputtering sedimentation to be less than 30nm/ hours.Inventor passes through
Many experiments discovery is crossed, when sputter rate is less than above-mentioned numerical value, the first higher nitride of crystalline quality can be formed and partly led
Body layer, deposition rate is lower, then the preferred orientation of the crystal obtained is better.According to an embodiment of the invention, sputtering sedimentation may be used also
Think pulsed sputtering sedimentation or ion beam aided sputtering deposition.Pulsed sputtering sedimentation replaces straight as a result of the pulse power
Galvanic electricity source carries out sputtering sedimentation, can effectively control deposition velocity, and the migration of enhanced deposition atom promotes crystal preferred orientation
It is formed；Using ion beam aided sputtering deposition, using Assisted by Ion Beam bombardment deposition substrate (i.e. substrate 100), it is heavy to improve
The defects of accumulating the energy and stability of aggregated particle, while eliminating deposition surface and the crystal grain of non-preferred orientation, are conducive to carry
The quality of the first nitride semiconductor layer 300 that high deposition is formed.Thus, it is possible to utilize pulsed sputtering sedimentation or ion beam
Sputtering sedimentation is assisted to improve the crystalline quality of the first nitride semiconductor layer 300 obtained.Inventor by many experiments find,
For conventional magnetron sputtering, its deposition rate easily reaches 1000nm/ hours when depositing the first nitride-based semiconductor
It is even higher, it is difficult to obtain the first nitride semiconductor layer with preferred orientation at this time, generally requires to splash using impulse magnetron
It penetrates or ion beam aided sputtering deposition technique, its deposition rate is greatly reduced to 100nm/ hours hereinafter, can then obtain
Obtain the first nitride semiconductor layer with preferred orientation.
According to an embodiment of the invention, substrate can be heated in sputtering sedimentation, is more than the temperature of substrate 100
300 degrees Celsius.Thus, it is possible to improve the crystalline quality of the first nitride semiconductor layer 300.The temperature of substrate 100 is with before herein
The temperature heated in the method for preparing semiconductor structure of face description to substrate is identical, during about sputtering sedimentation to substrate into
Row heating temperature, before detailed description has been carried out, details are not described herein.Alternatively, other realities according to the present invention
Example is applied, what the first nitride semiconductor layer 300 can be formed by sputtering sedimentation and annealing.It specifically, can be in room temperature
Lower completion sputtering process forms nitride mixture, then by the first annealing, improves the crystalline of nitride mixture
Amount, it is hereby achieved that the first nitride semiconductor layer 300.According to some embodiments of the present invention, the temperature of the first annealing
Degree can be 600~1200 degrees Celsius.Other embodiments according to the present invention, the temperature of the first annealing can also be
800~1000 degrees Celsius.Thus, it is possible to further improve the crystalline quality of the first nitride semiconductor layer.
According to an embodiment of the invention, the half of the XRD diffraction maximums of (0002) crystal face of the first nitride semiconductor layer 300 is high
It is wide to be less than 5 degree.Thus, it is possible to ensure that the first nitride semiconductor layer 300 has preferable crystalline quality, so as to reduce shape
Into the defects of the first nitride semiconductor layer 300, be conducive to improve the classes of semiconductors prepared using the semiconductor structure
The use function of device.
According to an embodiment of the invention, with reference to figure 4, which can further include：Second nitride half
Conductor layer 400.Specifically, the second nitride semiconductor layer 400 is formed in the upper surface of the first nitride semiconductor layer 300.
I other words the second nitride is formed far from the side of substrate 100 and graphene layer 200 in the first nitride semiconductor layer 300
Semiconductor layer 400.According to a particular embodiment of the invention, the second nitride semiconductor layer 400 can contain AlN, GaN, AlGaN
And at least one of InGaN.The composition of the composition and the first nitride semiconductor layer 300 of second nitride semiconductor layer 400
It differs.Those skilled in the art can select appropriate nitride partly to lead according to the concrete application demand of the semiconductor structure
Body material forms the second nitride semiconductor layer 400, as long as the second nitride semiconductor layer composition and the first nitride-based semiconductor
The composition of layer differs.Since the first nitride semiconductor layer 300 has preferable crystal preferred orientation, first
When forming the second nitride semiconductor layer 400 on nitride semiconductor layer 300, the first nitride semiconductor layer 300 can be utilized
Preferred orientation induce the second nitride semiconductor layer 400 formation, make the crystalline substance in the second nitride semiconductor layer 400 to be formed
Grillages row also have preferred orientation.In addition, compared with the substrate 100 that metal is formed, the second nitride semiconductor layer 400 with
Lattice Matching degree between first nitride semiconductor layer 300 is more preferable, therefore the shape on the first nitride semiconductor layer 300
Into the second nitride semiconductor layer, be conducive to improve the crystalline quality of the second nitride semiconductor layer 400.Thus, it is possible to it obtains
The second nitride semiconductor layer 400 with preferred orientation.The specific forming method of second nitride semiconductor layer 400 and front
The method that the second nitride semiconductor layer is formed in the method for preparing semiconductor structure of description has identical feature and excellent
Point, details are not described herein.
It should be noted that the previously described semiconductor structure of the present invention can be applied to prepare electronic device.Due to this
Containing previously described semiconductor structure in electronic device, therefore the electronic device has the complete of previously described semiconductor structure
Portion's feature and advantage, details are not described herein.In simple terms, the electronic device have preparation method it is easy, it is of low cost, need not
The advantages that high equipment.Also, there is the nitride containing crystal preferred orientation half in the semiconductor structure of the electronic device
Conductor layer, so as to improve the integral device performance of the electronic device.It should be noted that in the present invention, electronic device
Specific type be not particularly limited, those skilled in the art can be selected according to the concrete composition in semiconductor structure.
For example, containing nitride multilayer object Quantum Well (including GaN/InGaN/GaN, AlGaN/InGaN/ in the second nitride semiconductor layer
AlGaN when) when, both can be used as luminescent material be applied to LED structure can also be used as light absorbing layer be applied to solar cell.
Below by specific embodiment, the present invention will be described, it should be noted that specific embodiment below is only
It is to be for the purpose of illustration, without limiting the scope of the invention in any way, in addition, unless otherwise specified, then it is not specific to remember
The method of carrier strip part or step is conventional method, and used reagent and material commercially obtain.Wherein, it is raw
Long equipment is used as LAB18 magnetic control sputtering devices.
Embodiment 1：Nickel base superalloy Grown graphene, the first nitride-based semiconductor (AlN) layer
It is small by annealing 2 under rolling and 1000 degrees Celsius of nitrogen atmosphere using nickel base superalloy (GH3536) as substrate
When, form the high temperature alloy thin slice with texture.It is dried after being cleaned to the thin slice.
Graphene layer is prepared first：The high temperature alloy thin slice is put into chemical gas-phase deposition system, 1000 is heated to and takes the photograph
Then family name's degree, air pressure 200Torr, methane flow 50ml/min, argon flow amount 500ml/min cool to rapidly room temperature, during cooling
Argon flow amount 2000ml/min, hydrogen flowing quantity 500ml/min, 10 degrees second of cooling rate.In high temperature alloy sheet surface after cooling
Obtain graphene layer.
Then be sputtering target material using the first nitride semiconductor layer of magnetron sputtering deposition AlN, Al, in a nitrogen atmosphere into
Row deposition.Substrate is cleaned in advance before deposition.
Strobe pulse magnetron sputtering, sputtering power 300W, the duty ratio of the pulse power is 0.05, vacuum degree 1E-7Torr splashes
Penetrate Ar Pressure 10mtorr, 450 degrees Celsius of underlayer temperature, control speed of growth 30nm/h or so.It is thick to obtain nitride semiconductor layer
It spends for 30nm.Then, the film that sputtering obtains make annealing treatment under nitrogen atmosphere, 1000 degrees Celsius of annealing temperature, during annealing
Between 2 hours.
Show that the halfwidth at its (0002) peak is 1.2 degree by the XRD analysis of the AlN to acquisition, illustrate AlN with compared with
Good crystal preferred orientation.
Embodiment 2：Growth regulation mononitride semiconductor (AlN) layer and the second nitride-based semiconductor in metal substrate
(GaN) layer
The step of the first nitride semiconductor layer of growing AIN with embodiment 1, the difference is that obtaining the using sputtering
After mononitride semiconductor layer, continue with pulsed magnetron sputtering technique, GaN is sputtering target material, in a nitrogen atmosphere into
Row deposition.Sputtering power 300W, the duty ratio of the pulse power is 0.05, vacuum degree 1E-7Torr, Sputtering Ar Pressure 10mtorr, lining
600 degrees Celsius of bottom temperature, control speed of growth 30nm/h or so.It is 30nm to obtain nitride semiconductor layer thickness.Then, to splashing
The film for penetrating acquisition made annealing treatment under nitrogen atmosphere, 1000 degrees Celsius of annealing temperature, annealing time 2 hours.
Show that the halfwidth at its (0002) peak is 1.8 degree by the XRD analysis of the GaN to acquisition, illustrate GaN with compared with
Good crystal preferred orientation.
In the description of this specification, reference term " one embodiment ", " example ", " is specifically shown " some embodiments "
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment of the present invention or example.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It is combined in an appropriate manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the different embodiments or examples described in this specification and the feature of different embodiments or examples
It closes and combines.
In addition, in the present invention, term " first ", " second " are only used for description purpose, and it is not intended that instruction or dark
Show relative importance or the implicit quantity for indicating indicated technical characteristic.The feature of " first ", " second " is defined as a result,
It can express or implicitly include at least one this feature.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (37)
- A kind of 1. method for preparing semiconductor structure, which is characterized in that including：(1) substrate is provided；(2) surface sets graphene layer over the substrate；And(3) the first nitride semiconductor layer is formed, described in obtaining by sputtering sedimentation in the upper surface of the graphene layer Semiconductor structure, first nitride semiconductor layer have crystal preferred orientation,Wherein, the sputter rate of the sputtering sedimentation is less than 100nm/ hours.
- 2. according to the method described in claim 1, it is characterized in that, step (3) further comprises：Nitride-based semiconductor mixture is formed in the upper surface of the graphene layer by sputtering sedimentation, the nitride is partly led Body mixture carries out the first annealing, to obtain first nitride semiconductor layer.
- 3. method according to claim 1 or 2, which is characterized in that further comprise：(4) the second nitride semiconductor layer is formed in side of first nitride semiconductor layer far from the graphene layer, Second nitride semiconductor layer has crystal preferred orientation.
- 4. according to the method described in claim 3, it is characterized in that, further comprise：(5) to the substrate, the graphene layer, first nitride semiconductor layer and second nitride-based semiconductor Layer carries out the second annealing.
- 5. according to the method described in claim 1, it is characterized in that, first nitride semiconductor layer contain AlN, GaN, At least one of AlGaN and InGaN.
- 6. according to the method described in claim 3, it is characterized in that, second nitride semiconductor layer contain AlN, GaN, At least one of AlGaN and InGaN, the second nitride semiconductor layer composition and first nitride semiconductor layer Composition differs.
- 7. according to the method described in claim 1, it is characterized in that, the substrate is formed by glass or metal.
- 8. the method according to the description of claim 7 is characterized in that the glass top surface has the coat of metal.
- 9. according to the method described in claim 8, it is characterized in that, the metal includes high temperature alloy.
- 10. the method according to the description of claim 7 is characterized in that Ni, Co, Cu and Fe are contained in the upper surface of the metal At least one of.
- 11. according to the method described in claim 8, it is characterized in that, the upper surface of the coat of metal contain Ni, Co, Cu with And at least one of Fe.
- 12. the method according to the description of claim 7 is characterized in that the upper epidermis of the metal has texture structure.
- 13. according to the method described in claim 8, it is characterized in that, the upper epidermis of the coat of metal has texture structure.
- 14. according to the method described in claim 1, it is characterized in that, the graphene layer contains 1~10 layer graphene individual layer.
- 15. according to the method described in claim 1, it is characterized in that, the sputtering sedimentation is magnetron sputtering deposition or ion beam Sputtering sedimentation.
- 16. according to the method described in claim 1, it is characterized in that, the sputtering sedimentation is pulsed sputtering sedimentation or ion Beam assists sputtering sedimentation.
- 17. according to the method described in claim 1, it is characterized in that, underlayer temperature is Celsius not less than 300 during the sputtering sedimentation Degree.
- 18. according to the method described in claim 2, it is characterized in that, the temperature of first annealing is taken the photograph for 600~1200 Family name's degree.
- 19. according to the method described in claim 4, it is characterized in that, the temperature of second annealing is taken the photograph for 600~1200 Family name's degree.
- 20. a kind of semiconductor structure, which is characterized in that including：Substrate；Graphene layer, the graphene layer are arranged on the upper surface of the substrate；WithFirst nitride semiconductor layer, first nitride semiconductor layer are formed in the upper surface of the graphene layer, and First nitride semiconductor layer has crystal preferred orientation,First nitride semiconductor layer is formed by sputtering sedimentation, and the sputter rate of the sputtering sedimentation is less than 100nm/ hours.
- 21. semiconductor structure according to claim 20, which is characterized in that the substrate is formed by glass or metal 's.
- 22. semiconductor structure according to claim 21, which is characterized in that the metal includes high temperature alloy.
- 23. semiconductor structure according to claim 21, which is characterized in that the glass top surface has the coat of metal.
- 24. semiconductor structure according to claim 21, which is characterized in that the upper surface of the metal contain Ni, Co, At least one of Cu, Fe.
- 25. semiconductor structure according to claim 23, which is characterized in that the upper surface of the coat of metal contain Ni, At least one of Co, Cu, Fe.
- 26. semiconductor structure according to claim 21, which is characterized in that the upper epidermis of the metal has texture knot Structure.
- 27. semiconductor structure according to claim 23, which is characterized in that the upper epidermis of the coat of metal has texture Structure.
- 28. semiconductor structure according to claim 20, which is characterized in that first nitride semiconductor layer contains At least one of AlN, GaN, AlGaN and InGaN.
- 29. semiconductor structure according to claim 20, which is characterized in that further comprise：Second nitride semiconductor layer, it is separate that second nitride semiconductor layer is formed in first nitride semiconductor layer The side of the graphene layer, the nitride semiconductor layer have crystal preferred orientation.
- 30. semiconductor structure according to claim 29, which is characterized in that second nitride semiconductor layer contains At least one of AlN, GaN, AlGaN and InGaN, the second nitride semiconductor layer composition and first nitride half The composition of conductor layer differs.
- 31. semiconductor structure according to claim 20, which is characterized in that first nitride semiconductor layer (0002) The halfwidth of the XRD diffraction maximums of crystal face is less than 5 degree.
- 32. semiconductor structure according to claim 20, which is characterized in that first nitride semiconductor layer is to pass through What sputtering sedimentation and annealing were formed.
- 33. semiconductor structure according to claim 29, which is characterized in that second nitride semiconductor layer is to pass through What sputtering sedimentation was formed.
- 34. semiconductor structure according to claim 33, which is characterized in that second nitride semiconductor layer is to pass through What sputtering sedimentation and annealing were formed.
- 35. according to claim 32-34 any one of them semiconductor structures, which is characterized in that the sputtering sedimentation is magnetic control Sputtering sedimentation or ion beam sputter depositing.
- 36. semiconductor structure according to claim 35, which is characterized in that the sputtering sedimentation is pulsed sputtering sedimentation Or ion beam aided sputtering deposition.
- 37. semiconductor structure according to claim 35, which is characterized in that underlayer temperature is more than during the sputtering sedimentation 300 degrees Celsius.
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