CN105977136A - Semiconductor structure and method for preparing the same - Google Patents
Semiconductor structure and method for preparing the same Download PDFInfo
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- CN105977136A CN105977136A CN201610366326.5A CN201610366326A CN105977136A CN 105977136 A CN105977136 A CN 105977136A CN 201610366326 A CN201610366326 A CN 201610366326A CN 105977136 A CN105977136 A CN 105977136A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 303
- 238000000034 method Methods 0.000 title claims abstract description 52
- 150000004767 nitrides Chemical class 0.000 claims abstract description 237
- 238000004544 sputter deposition Methods 0.000 claims abstract description 106
- 239000013078 crystal Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 238000000151 deposition Methods 0.000 claims abstract description 53
- 230000008021 deposition Effects 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 31
- 238000004062 sedimentation Methods 0.000 claims description 79
- 238000000137 annealing Methods 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 24
- 238000010884 ion-beam technique Methods 0.000 claims description 20
- 229910002704 AlGaN Inorganic materials 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 abstract description 18
- 230000006698 induction Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 20
- 229910017083 AlN Inorganic materials 0.000 description 19
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 19
- 229910002601 GaN Inorganic materials 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000001659 ion-beam spectroscopy Methods 0.000 description 5
- 238000011835 investigation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
- 150000002830 nitrogen compounds Chemical class 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 nitrogen nitride Chemical class 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
The invention puts forward a semiconductor structure and a method for preparing the same. To be specific, the method comprises: (1), providing a substrate made of glass; and (2), carrying out sputtering deposition on the upper surface of the substrate to form a first nitride semiconductor layer, thereby obtaining the semiconductor structure. And the first nitride semiconductor layer has a crystal preferred orientation. Therefore, the preparation cost can be reduced and the preparation process can be simplified; and the nitride semiconductor structure having the crystal preferred orientation is obtained on the glass substrate. With the nitride semiconductor structure having the crystal preferred orientation, induction of other nitride structures formed subsequently can be realized smoothly, so that the other nitride structures also can have the crystal preferred orientations.
Description
Technical field
The present invention relates to semiconductor technology and field of semiconductor manufacture, specifically, the present invention relates to semiconductor structure and
The method preparing semiconductor structure.
Background technology
In technical field of semiconductors, the nitride semi-conductor material such as aluminium nitride, gallium nitride owing to having more excellent performance,
It is widely used in the preparation of photoelectric device.For the devices such as solaode or light emitting diode (LED), as
Utilize glass as backing material, both may utilize the light transmission of glass, may utilize again the low cost feature of glass substrate, therefore
Have a good application prospect.But, for the solaode or LED of better performances, nitride therein half
Conductor material typically requires that into the polycrystalline that monocrystalline or crystal orientation concordance are good, crystal the most therein has preferred orientation.
But, it is currently based on glass substrate and prepares the semiconductor technology of nitride semi-conductor material and still have much room for improvement.
Summary of the invention
Inventor finds through further investigation, for the semiconductor junction containing the nitride semi-conductor material such as aluminium nitride or gallium nitride
Structure, in order to make nitride semi-conductor material form certain crystal preferred orientation, it usually needs uses and has certain crystal preferentially
The substrate of orientation, such as silicon substrate.And silicon substrate can not take into account the requirement for light transmission of solaode or light emitting diode,
And compared with glass, relatively costly.Inventor finds through great many of experiments, by suitable sputter deposition craft, Ke Yi
The nitride semiconductor thin film with crystal preferred orientation is prepared on glass.Such that it is able to reduce being prepared as of semiconductor structure
This, and use it for preparing the semiconductor device such as high performance solaode, light emitting diode.
It is contemplated that one of technical problem solved the most to a certain extent in correlation technique.To this end, the one of the present invention
Purpose is to propose a kind of method preparing semiconductor structure, and the method uses the method for sputtering sedimentation, by sputtering condition
Control, it is possible to formed and there is the nitride semiconductor layer of crystal preferred orientation.With utilize molecular beam epitaxial growth technology and
Metal organic chemical vapor deposition technology is compared, and sputtering sedimentation has with low cost, simple operation and other advantages.
In one aspect of the invention, the present invention proposes a kind of method preparing semiconductor structure.The method includes: (1)
Thering is provided substrate, described substrate is formed by glass；And (2) at the upper surface of described substrate by sputtering sedimentation, formed
First nitride semiconductor layer, in order to obtaining described semiconductor structure, wherein, described first nitride semiconductor layer has crystalline substance
Body preferred orientation.Thus, it is possible to reduction preparation cost, simplify preparation technology, and obtain on a glass substrate and there is crystal select
The nitride semiconductor structure of excellent orientation.Have the nitride semiconductor layer of crystal preferred orientation be conducive to inducing follow-up thereon
Other nitride structures formed so that it is also there is crystal preferred orientation.
According to embodiments of the invention, step (2) farther includes: formed at the upper surface of described substrate by sputtering sedimentation
Nitride mixture, carries out the first annealing to described nitride mixture, in order to obtain described first nitride-based semiconductor
Layer.Thus, it is possible to simplify the preparation technology of sputter deposition process further, reduce the requirement to depositing device, such that it is able to
Reduce production cost further.
According to embodiments of the invention, the method farther includes: (3) at described first nitride semiconductor layer away from described
The second nitride semiconductor layer that the side of substrate is formed, described second nitride semiconductor layer has crystal preferred orientation.By
This, it is possible to use the crystal preferred orientation of the first nitride semiconductor layer, improves the quality of the second nitride semiconductor layer.
According to embodiments of the invention, (4) are to described substrate, described first nitride semiconductor layer and described second nitridation
Thing semiconductor layer carries out the second annealing.Thus, it is possible to by the second annealing, improve the first nitride half further
Conductor layer and/or the crystalline quality of the second nitride semiconductor layer.
According to embodiments of the invention, described first nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one.Those skilled in the art can select above-mentioned material to form the first nitride semiconductor layer according to the actual requirements,
Thus, it is possible to improve the performance of this semiconductor structure further.
According to embodiments of the invention, described second nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one, described second nitride semiconductor layer composition differs with the composition of described first nitride semiconductor layer.By
This, can improve the performance of this semiconductor structure further.
According to embodiments of the invention, described sputtering sedimentation is magnetron sputtering deposition or ion beam sputter depositing.Magnetic control is utilized to spatter
Penetrate or ion beam sputtering can preferably control the crystal structure of the first nitride semiconductor layer of sedimentation rate and deposition,
Thus advantageously form the nitride semiconductor layer with crystal preferred orientation.
According to embodiments of the invention, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.Thus,
Pulsed sputtering sedimentation or ion beam aided sputtering deposition can be utilized to control the speed of deposition, improve the first nitride obtained
The crystalline quality of semiconductor layer.
According to embodiments of the invention, the sputter rate of described sputtering sedimentation is less than 100nm/ hour.When sputter rate is less than upper
When stating numerical value, it is possible to significantly improve the crystalline quality of the first nitride semiconductor layer that sputtering sedimentation obtains, and then one can be entered
Step improves the performance of this semiconductor structure.
According to embodiments of the invention, the temperature of described first annealing and the second annealing is separately
600～1200 degrees Celsius.Thus, it is possible to improve further the first nitride semiconductor layer and the second nitride semiconductor layer
Crystalline quality.
According to embodiments of the invention, in step (2), during described sputtering sedimentation, underlayer temperature is not less than 300 degrees Celsius.By
This, can be easily by heating substrate, it is thus achieved that have the first nitride semiconductor layer of crystal preferred orientation, from
And the deposition step requirement to equipment can be reduced, simplify preparation technology, reduce production cost.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to embodiments of the invention, this is partly led
Body structure includes: substrate, and described substrate is formed by glass；With the first nitride semiconductor layer, described first nitride
Semiconductor layer is formed at the upper surface of described substrate and has crystal preferred orientation.There is the first nitride of crystal preferred orientation
Semiconductor layer is conducive to improving the performance of this semiconductor structure, and can induce the crystallization situation of the structure of formation on it, makes
It also has the preferred orientation of crystal, thus beneficially this semiconductor structure of later use constitutes solaode or light-emitting diodes
The structures such as pipe.
According to embodiments of the invention, the halfwidth of the XRD diffraction maximum of described first nitride semiconductor layer (0002) crystal face
Less than 5 degree.The halfwidth controlling XRD diffraction maximum is conducive to improving the crystalline quality of this first nitride semiconductor layer.
According to embodiments of the invention, described first nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one.Those skilled in the art can select the concrete material of the first nitride semiconductor layer according to the actual requirements, by
This, can improve the performance of this semiconductor structure further.
According to embodiments of the invention, described semiconductor structure farther includes: the second nitride semiconductor layer, and described second
Nitride semiconductor layer is formed at described first nitride semiconductor layer side away from described substrate.Thus, it is possible to utilize tool
The first nitride semiconductor layer having crystal preferred orientation induces the formation of the second nitride semiconductor layer, such that it is able to improve the
The crystalline quality of diammine semiconductor layer.
According to embodiments of the invention, described second nitride semiconductor layer contains AlN, GaN, AlGaN and InGaN
At least one, described second nitride semiconductor layer composition differs with the composition of described first nitride semiconductor layer.By
This, can improve the performance of this semiconductor device further.
According to embodiments of the invention, described first nitride semiconductor layer is formed by sputtering sedimentation.Thus, it is possible to
While ensureing the first nitride semiconductor layer quality, reduce preparation cost, simplify preparation technology.
According to embodiments of the invention, the first nitride semiconductor layer and the second nitride semiconductor layer at least one be logical
Cross sputtering sedimentation and make annealing treatment formation.Thus, it is possible to simplify the preparation technology of sputter deposition process further, it is right to reduce
The requirement of depositing device, such that it is able to reduce production cost further.
According to embodiments of the invention, described sputtering sedimentation is magnetron sputtering deposition or ion beam sputter depositing.Magnetic control is utilized to spatter
Penetrate or ion beam sputtering can preferably control the crystal structure of sedimentation rate and formation of deposits, thus advantageously form tool
There is the first nitride semiconductor layer of crystal preferred orientation.
According to embodiments of the invention, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.Thus,
Pulsed sputtering sedimentation or ion beam aided sputtering deposition can be utilized to control the speed of deposition, improve the first nitridation obtained
The crystalline quality of thing semiconductor layer.
According to embodiments of the invention, during described sputtering sedimentation, underlayer temperature is more than 300 degrees Celsius.Thus, it is possible to improve the
The crystalline quality of mononitride semiconductor layer.
According to embodiments of the invention, the sputter rate of described sputtering sedimentation is less than 100nm/ hour.When sputter rate is less than upper
When stating numerical value, it is possible to significantly improve the crystalline quality of the first nitride semiconductor layer that sputtering sedimentation obtains, and then one can be entered
Step improves the performance of this semiconductor structure.
Accompanying drawing explanation
Fig. 1 is the flow chart of the method preparing semiconductor structure according to an embodiment of the invention；
Fig. 2 is the flow chart of the method preparing semiconductor structure in accordance with another embodiment of the present invention；
Fig. 3 is the structural representation of semiconductor structure according to an embodiment of the invention；And
Fig. 4 is the structural representation of semiconductor structure in accordance with another embodiment of the present invention.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, the most identical
Or similar label represents same or similar element or has the element of same or like function.Retouch below with reference to accompanying drawing
The embodiment stated is exemplary, it is intended to is used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it is to be understood that term " on ", the orientation of the instruction such as D score or position relationship be based on
Orientation shown in the drawings or position relationship, be for only for ease of the description present invention and simplify description rather than instruction or hint institute
The device that refers to or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that to this
Bright restriction.
In one aspect of the invention, the present invention proposes a kind of method preparing semiconductor structure.Generally, sputtering is used
Method is hardly formed crystal preferred orientation, the most on a glass substrate, general many formation polycrystalline or impalpable structure.Invention
People finds through further investigation and great many of experiments, by modes such as underlayer temperatures when reduction sputter rate, raising sputtering, or
Person is processed by subsequent anneal, can be effectively improved the crystalline quality of the nitride-based semiconductor that sputtering is formed, thus realize utilizing
Sputtering obtains crystal preferred orientation.Make use of during this nitride semiconductor crystal when epitaxial growth the speed of growth each to
The opposite sex, i.e. nitride semiconductor thin film are when deposition, and the deposition growth rate in some crystal orientation is significantly faster than that other crystal face, and
In high temperature sputtering sedimentation and annealing process, nitride semi-conductor material has obvious crystal recrystallization, has preferred orientation
Big crystal grain is constantly grown up so that the little crystal grain of non-preferred orientation is fewer and feweri to be even disappeared completely.In the present invention, " selecting of crystal
Excellent orientation " refer to that crystal has preferred orientation, in the i.e. first nitride semiconductor layer and the second nitride semiconductor layer one
Crystal orientation in the range of Ding reaches unanimity, and the most also includes monocrystalline (being orientated completely the same in crystal everywhere).Specifically, root
According to embodiments of the invention, with reference to Fig. 1, the method includes:
S100: substrate is provided
According to embodiments of the invention, substrate can be formed by glass.Such as, according to embodiments of the invention, substrate
Can be formed by conventional non-quartz glass, it is also possible to formed by quartz glass.The substrate formed by glass is easy to process, material
Material wide material sources and with low cost, advantageously reduce the cost utilizing the method to prepare semiconductor structure, and, glass substrate
There is light transmission, prepare the biography of the semiconductor structure such as solaode or light emitting diode, beneficially light on a glass substrate
Defeated.Such as, substrate can be corning glass or quartz glass, and cuts into suitable size.Those skilled in the art's energy
Enough it is understood by, in order to improve the quality of the semiconductor structure of preparation, before carrying out subsequent step, substrate can be carried out
Clean, in order to remove the impurity such as the oils and fats of substrate surface, dust, such that it is able to improve the deposition effect of subsequent step.
S200: form the first nitride semiconductor layer
According to embodiments of the invention, in this step, the upper surface at substrate passes through sputtering sedimentation, forms the first nitride
Semiconductor layer.Thus, it is possible to reduction preparation cost, simplify preparation technology, and obtain the nitride with crystal preferred orientation
Semiconductor layer structure.
Sputter deposition process is described in detail by the specific embodiment below according to the present invention.
According to embodiments of the invention, the first nitride semiconductor layer can contain AlN, GaN, AlGaN and InGaN
At least one.Above-mentioned nitride semi-conductor material has good physical and chemical performance, is suitable to prepare semiconductor photoelectric device.Example
As, according to embodiments of the invention, AlN can be used to form the first nitride semiconductor layer.Use the first of AlN formation
Nitride semiconductor layer, is possible not only to the broad-band gap utilizing AlN material to have, good uv transmittance and height and punctures
The performances such as field intensity, improve the performance of the semiconductor structure formed, it is also possible to as other nitride semi-conductor materials of subsequent growth
The good substrate of (the second nitride semiconductor layer), because compared with the substrate of the material such as glass, AlN and remaining nitride
Semi-conducting material has good lattice matching property.
Specifically, according to embodiments of the invention, magnetron sputtering deposition or ion beam sputter depositing can be used to form the first nitrogen
Compound semiconductor layer.Inventor finds through great many of experiments, the speed of sputtering sedimentation the first nitride semiconductor layer to being formed
Crystal structure there is material impact.Sputtering sedimentation speed advantageously forms first nitride half with crystal preferred orientation slowly
Conductor layer.Magnetron sputtering or ion beam sputtering is utilized can preferably to control sedimentation rate, such that it is able to control the nitrogen of deposition
The crystal structure of compound quasiconductor, is formed and has a crystal preferred orientation and the first nitride-based semiconductor of the polycrystalline of non-confusion arrangement
Layer.Preferably, according to embodiments of the invention, sputtering sedimentation can also be pulsed sputtering sedimentation or Assisted by Ion Beam sputtering
Deposition.Pulsed sputtering sedimentation replaces DC source to carry out sputtering sedimentation owing to have employed the pulse power, can effectively control to sink
Long-pending speed, the migration of enhanced deposition atom, promote the formation of crystal preferred orientation；Use ion beam aided sputtering deposition, profit
Bombard deposition substrate (i.e. corning glass or quartz substrate) by Assisted by Ion Beam, can improve deposition aggregated particle energy with
And stability, eliminate defect and the crystal grain of non-preferred orientation of deposition surface simultaneously, be conducive to improving the nitride of formation of deposits
The quality of semiconductor layer, forms first nitride semiconductor layer with preferred orientation.Specifically, according to the enforcement of the present invention
Example, can control the sputter rate of sputtering sedimentation less than 100nm/ hour, it is preferable that the sputter rate controlling sputtering sedimentation is little
In 30nm/ hour.Inventor finds through great many of experiments, when sputter rate is less than above-mentioned numerical value, it is possible to form crystalline
Measuring the first higher nitride semiconductor layer, sedimentation rate is the lowest, then the preferred orientation of the crystal obtained is the best.At above-mentioned bar
The halfwidth of the XRD diffraction maximum of the first nitride semiconductor layer (0002) crystal face formed under part can be less than 5 degree.Thus,
Pulsed sputtering sedimentation or ion beam aided sputtering deposition can be utilized to improve the crystalline of the nitride semiconductor layer obtained
Amount.Inventor finds through great many of experiments, and for conventional magnetron sputtering, when depositing the first nitride-based semiconductor, it sinks
Long-pending speed easily reach 1000nm/ hour the highest, be now difficult to obtain and there is the first nitride of preferred orientation partly lead
Body layer, generally requires and utilizes pulsed magnetron sputtering or ion beam aided sputtering deposition technique, its sedimentation rate significantly dropped
As little as less than 100nm/ hour, then it is obtained in that first nitride semiconductor layer with preferred orientation.
According to embodiments of the invention, in this step, tool can be formed by substrate being heated in sputter procedure
There is the first nitride semiconductor layer of crystal preferred orientation.Inventor finds through great many of experiments, the underlayer temperature of sputtering sedimentation
The crystal structure of the first nitride semiconductor layer formed is had material impact, and underlayer temperature is the highest, then preferentially the taking of crystal
Tropism is the best.Specifically, when can make sputtering sedimentation by heating, underlayer temperature is not less than 300 degrees Celsius.Inventor passes through
Further investigation and great many of experiments find that the first nitride semiconductor layer formed for nitride semi-conductor material works as deposition
Time underlayer temperature less than 300 degrees Celsius time, the first nitride semiconductor layer of formation mostly is polycrystalline structure.When underlayer temperature liter
When up to 300～500 degrees Celsius, the crystal making formation is conducive to have preferred orientation.Further, enter under above-mentioned heating-up temperature
Row sputtering sedimentation, also will not impact glass substrate.Thus, it is possible to easily by substrate is heated, it is thus achieved that
Nitride semiconductor layer, such that it is able to reduce the deposition step requirement to equipment, simplifies preparation technology, reduces production cost.
According to other embodiments of the present invention, in this step, it is also possible to by normal temperatures target being carried out sputtering sedimentation,
Such as, carrying out magnetron sputtering, substrate does not heats, and the upper surface formation of deposits at substrate has the nitridation of polycrystalline or non crystalline structure
Thing mixture.It should be noted that in the present invention, term " nitride mixture " refers in particular under room temperature or low temperature target
Carry out sputtering sedimentation formation, there is polycrystalline structure, but tend not to consistent knot without preferable preferred orientation, i.e. crystal lattice orientation
Structure.Then, the nitride mixture formed is carried out the first annealing so that it is be converted into the crystal knot with preferred orientation
Structure, such that it is able to improve the crystalline quality of nitride mixture, it is thus achieved that nitride semiconductor layer.Inventor is through great many of experiments
Finding, the time of annealing is the longest, then the crystal mass of nitride semiconductor layer is the best.Thus, it is possible to easily by annealing
Obtain nitride semiconductor layer, be conducive to reducing further the deposition step requirement to equipment, simplify preparation technology, reduce raw
Produce cost.According to the still other embodiments of the present invention, in this step, it is also possible to by high temperature target being sputtered
Deposition, such as, to silicon during magnetron sputtering, can make underlayer temperature is 300-500 degrees centigrade,
Upper surface formation of deposits at substrate has the first nitride semiconductor layer of crystal preferred orientation, subsequently to the first nitrogen formed
Compound semiconductor layer carries out the first annealing, such that it is able to improve the crystalline quality of the first nitride semiconductor layer further,
Obtain and high-quality there is the most high-quality mono-crystalline structures of crystal preferred orientation.According to some embodiments of the present invention, first
The temperature of annealing can be 600～1200 degrees Celsius.According to other embodiments of the present invention, the temperature of the first annealing
Degree can also be 800～1000 degrees Celsius.Thus, it is possible to improve the crystalline quality of the first nitride semiconductor layer further.This
Skilled person it is understood that when the first nitride semiconductor layer is made annealing treatment by needs, needs to use resistance to
The glass of high temperature is as substrate.
According to embodiments of the invention, in order to improve the performance of the semiconductor structure utilizing said method to prepare further, according to
Embodiments of the invention, with reference to Fig. 2, the method can further include:
S300: form the second nitride semiconductor layer
According to embodiments of the invention, in this step, the upper surface at the first nitride semiconductor layer forms the second nitride
Semiconductor layer.In other words, the second nitride semiconductor layer is formed at the first nitride semiconductor layer away from the side of substrate.
Concrete, the second nitride semiconductor layer can containing AlN, GaN, AlGaN and InGaN at least one.Second
Nitride semiconductor layer composition differs with the composition of the first nitride semiconductor layer.Owing to the first nitride semiconductor layer has
Therefore preferably crystal preferred orientation, when forming the second nitride semiconductor layer, it is possible to right on the first nitride semiconductor layer
Second nitride semiconductor layer plays inducing action, makes the lattice arrangement in the second nitride semiconductor layer of formation also have and selects
Excellent orientation.Further, it is nitride semi-conductor material due to the first nitride semiconductor layer and the second nitride semiconductor layer
Formed, on the first nitride semiconductor layer, therefore form the second nitride semiconductor layer, and directly the most on a glass substrate
Forming the second nitride semiconductor layer to compare, the Lattice Matching degree between double-layer structure is more preferable, thus, it is possible to optimize the party
The semiconductor structure that method is formed.
It should be noted that in this step, the concrete grammar forming the second nitride semiconductor layer is not particularly limited.Example
As, sputtering sedimentation and annealing can be used to form second nitride semiconductor layer with preferred orientation, or directly by height
Temperature sputtering sedimentation is formed, it is also possible to utilize mocvd process to be formed.
In order to improve the crystal preferred orientation of each layer in this semiconductor structure further, with reference to Fig. 2, the method can be wrapped further
Include:
S400: the second annealing
According to some embodiments of the present invention, it is also possible to after formation of the second nitride semiconductor layer, to substrate, the first nitrogen
Compound semiconductor layer and the second nitride semiconductor layer carry out the second annealing.Specifically, according to embodiments of the invention,
The temperature of the second annealing can be 600～1200 degrees Celsius.According to other embodiments of the present invention, the second annealing
Temperature can also be 800～1000 degrees Celsius.Thus, it is possible to improve the first nitride semiconductor layer and the second nitridation further
The crystalline quality of thing semiconductor layer, improves its crystal preferred orientation.It will be appreciated to those of skill in the art that when need into
During above-mentioned second annealing of row, need to use resistant to elevated temperatures glass as substrate.Inventor finds through great many of experiments, long
The annealing of time can make the first nitride semiconductor layer and semiconductor layer recrystallization, forms the preferred orientation of crystal.Cause
This, carry out the second annealing and be conducive to improving the crystalline quality of nitride semi-conductor material above-mentioned semiconductor structure.Ability
Field technique personnel do not have preferred orientation it is understood that the method for sputtering can also be utilized to be formed the most on a glass substrate
The first nitride semiconductor layer and the second nitride semiconductor layer, recycle long second annealing make first
Nitride semiconductor layer and the second nitride semiconductor layer form the preferred orientation of crystal, and this kind of situation is also in the protection of the present invention
Among scope.It should be noted that in the present invention, in " long second annealing ", the tool of the second annealing
The body time is not particularly limited, as long as the first nitride semiconductor layer and second nitridation with crystal preferred orientation can be formed
Thing semiconductor layer, or the crystal structure quality of said structure can be improved.According to a particular embodiment of the invention,
The concrete time of two annealings can be 1～20 hour.Annealing temperature is the highest, then annealing time can suitably shorten.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to embodiments of the invention, with reference to Fig. 3,
This semiconductor structure includes: substrate 100 and the first nitride semiconductor layer 200, the first nitride semiconductor layer 200 shape
Become on the upper surface of substrate 100 and there is crystal preferred orientation.Wherein, substrate 100 can be glass.There is crystal select
The nitride semiconductor layer of excellent orientation can improve the performance of this semiconductor structure, and can be follow-up be formed on other
Nitride semiconductor structure provides has the substrate of preferable Lattice Matching degree, thus beneficially this semiconductor structure of later use
Constitute the electronic device such as solaode, light emitting diode.
Specifically, substrate 100 can be formed by conventional non-quartz glass, it is also possible to is formed by quartz glass.Above-mentioned material
The substrate 100 constituted is easy to process and with low cost, advantageously reduces the production cost of this semiconductor structure.Such as, substrate
Can be corning glass or quartz glass, and cut into suitable size.
According to embodiments of the invention, the first nitride semiconductor layer 200 is formed by sputtering sedimentation.First nitride
The particular make-up of semiconductor layer 200 can have and the first nitride in the previously described method preparing semiconductor structure half
Feature that conductor layer is identical and advantage, do not repeat them here.Such as, the first nitride semiconductor layer 200 can contain AlN,
At least one GaN, AlGaN and InGaN.According to a particular embodiment of the invention, AlN can be used to form first
Nitride semiconductor layer.Generally, use the method for sputtering to be hardly formed crystal preferred orientation structure, much more general formed polycrystalline or
Impalpable structure.Inventor finds through further investigation and great many of experiments, lining during by reducing sputter rate, improving sputtering
The modes such as end temperature, or processed by subsequent anneal, improve the crystalline quality of the nitride-based semiconductor that sputtering is formed, permissible
Realization utilizes sputtering sedimentation to obtain crystal preferred orientation structure on a glass substrate.Thus, it is possible to ensureing nitride-based semiconductor
While layer quality, reduce preparation cost, simplify preparation technology.Specifically, the can be formed by pulsed sputtering sedimentation
Mononitride semiconductor layer 200.Specifically, magnetron sputtering deposition or ion beam sputter depositing can be used to form the first nitridation
Thing semiconductor layer 200.Inventor finds through great many of experiments, the crystalline substance of the speed of the sputtering sedimentation nitride-based semiconductor to being formed
Body structure has material impact.Sputtering sedimentation speed advantageously forms the first nitride semiconductor layer 200 slowly.Magnetic control is utilized to spatter
Penetrate or ion beam sputtering can preferably control sedimentation rate, such that it is able to control the crystal knot of the nitride-based semiconductor of deposition
Structure, forms the first nitride semiconductor layer.Specifically, according to embodiments of the invention, the sputtering of sputtering sedimentation can be controlled
Speed is less than 100nm/ hour, it is preferable that control the sputter rate of sputtering sedimentation less than 30nm/ hour.Inventor is through excessive
Amount experiment finds, when sputter rate is less than above-mentioned numerical value, it is possible to form the first nitride semiconductor layer that crystalline quality is higher,
Sedimentation rate is the lowest, then the preferred orientation of the crystal obtained is the best.According to embodiments of the invention, sputtering sedimentation can also be
Pulsed sputtering sedimentation or ion beam aided sputtering deposition.Pulsed sputtering sedimentation replaces unidirectional current owing to have employed the pulse power
Source carries out sputtering sedimentation, can effectively control deposition velocity, the migration of enhanced deposition atom, promote the shape of crystal preferred orientation
Become；Using ion beam aided sputtering deposition, utilize Assisted by Ion Beam bombardment deposition substrate (i.e. substrate 100), it is heavy to improve
The energy of long-pending aggregated particle and stability, eliminate defect and the crystal grain of non-preferred orientation of deposition surface simultaneously, be conducive to carrying
The quality of the first nitride semiconductor layer 200 of high formation of deposits.Thus, it is possible to utilize pulsed sputtering sedimentation or ion
Bundle auxiliary sputtering sedimentation improves the crystalline quality of the first nitride semiconductor layer 200 obtained.Inventor sends out through great many of experiments
Existing, for conventional magnetron sputtering, when depositing the first nitride-based semiconductor, its sedimentation rate easily reaches 1000nm/
Hour the highest, now it is difficult to obtain first nitride semiconductor layer with preferred orientation, generally requires and utilize pulsed magnetic
Control sputtering or ion beam aided sputtering deposition technique, be greatly reduced to its sedimentation rate less than 100nm/ hour, then can
Enough acquisitions have the first nitride semiconductor layer of preferred orientation.
According to embodiments of the invention, when sputtering sedimentation, substrate can be heated, make the temperature of substrate 100 more than 300
Degree Celsius.Inventor finds through great many of experiments, the underlayer temperature of sputtering sedimentation the first nitride semiconductor layer to being formed
Crystal structure has material impact, and underlayer temperature is the highest, then the preferred orientation of crystal is the best.Thus, it is possible to improve first
The crystalline quality of nitride semiconductor layer 200.The temperature of substrate 100 and the previously described side preparing semiconductor structure herein
The temperature in method heated substrate is identical, about temperature during sputtering sedimentation, substrate heated, before carried out
Detailed description, does not repeats them here.Or, according to other embodiments of the present invention, the first nitride semiconductor layer
200 can be by sputtering sedimentation and annealing formation.Specifically, can at room temperature complete sputter procedure, form nitrogen
Compound mixture, then by the first annealing, improves the crystalline quality of nitride mixture, it is hereby achieved that have
First nitride semiconductor layer 200 of crystal preferred orientation.According to some embodiments of the present invention, the temperature of the first annealing
Degree can be 600～1200 degrees Celsius.According to other embodiments of the present invention, the temperature of the first annealing can also be
800～1000 degrees Celsius.Thus, it is possible to improve the crystalline quality of the first nitride semiconductor layer further.
According to embodiments of the invention, the half of the XRD diffraction maximum of (0002) crystal face of the first nitride semiconductor layer 200 is high
Wide it is less than 5 degree.Thus, it is possible to ensure that the first nitride semiconductor layer 200 has preferable crystalline quality, such that it is able to fall
Defect in the first nitride semiconductor layer 200 that low nitrogen nitride semi-conducting material is formed, beneficially raising utilizes this quasiconductor
The use function of classes of semiconductors device prepared by structure.
According to embodiments of the invention, with reference to Fig. 4, this semiconductor structure can further include: the second nitride-based semiconductor
Layer 300.Specifically, the second nitride semiconductor layer 300 is formed at the upper surface of the first nitride semiconductor layer 200.Also
I other words, form the second nitride semiconductor layer 300 at the first nitride semiconductor layer 200 away from the side of substrate 100.
According to a particular embodiment of the invention, the second nitride semiconductor layer 300 can contain AlN, GaN, AlGaN and InGaN
At least one.Second nitride semiconductor layer composition differs with the composition of the first nitride semiconductor layer.Art technology
Personnel can select suitable nitride semi-conductor material to form the second nitridation according to the concrete application demand of this semiconductor structure
Thing semiconductor layer 300, as long as the composition of the second nitride semiconductor layer composition and the first nitride semiconductor layer differs.
Owing to the first nitride semiconductor layer 200 has preferable crystal preferred orientation, therefore at the first nitride semiconductor layer 200
During upper formation the second nitride semiconductor layer 300, it is possible to utilize the preferred orientation induction the of the first nitride semiconductor layer 200
The formation of diammine semiconductor layer 300, makes the lattice arrangement in the second nitride semiconductor layer 300 of formation also have and selects
Excellent orientation.Additionally, compared with glass substrate, the second nitride semiconductor layer 300 and the first nitride semiconductor layer 200
Between Lattice Matching degree more preferable, therefore on the first nitride semiconductor layer 200, form the second nitride semiconductor layer,
Be conducive to improving the crystalline quality of the second nitride semiconductor layer 300.Thus, it is possible to obtain second nitrogen with preferred orientation
Compound semiconductor layer 300.The concrete forming method of the second nitride semiconductor layer 300 prepares semiconductor junction with previously described
The method forming the second nitride semiconductor layer 300 in the method for structure has identical feature and advantage, does not repeats them here.
According to some embodiments of the present invention, the second nitride semiconductor layer 300 can also be by sputtering sedimentation and annealing treatment
Reason is formed.Inventor finds through great many of experiments, and annealing can make nitride semi-conductor material recrystallization for a long time,
Form the preferred orientation of crystal.Therefore, it can after forming the second nitride semiconductor layer 300, to above-mentioned semiconductor junction
Structure carries out the second annealing, in order to improve the second nitride semiconductor layer 300 and the first nitride semiconductor layer 200
Crystalline quality.It will be appreciated by persons skilled in the art that in the present invention, it is also possible to utilize the method for sputtering first at glass
Forming the first nitride semiconductor layer and second nitride semiconductor layer without preferred orientation on glass substrate, recycling is long
Second annealing of time, improves the crystalline quality of nitride-based semiconductor, forms the first nitridation according to embodiments of the present invention
Thing semiconductor layer 200 and the second nitride semiconductor layer 300.It should be noted that in the present invention, " long second
Annealing " in, the concrete time of the second annealing is not particularly limited, and has crystal preferred orientation as long as can be formed
The first nitride semiconductor layer and the second nitride semiconductor layer, or the crystalline quality of its crystal can be improved.Root
According to the specific embodiment of the present invention, the concrete time of the second annealing can be 1～20 hour.Annealing temperature is the highest, then move back
The fire time can suitably shorten.
It should be noted that the previously described semiconductor structure of the present invention can apply to prepare electronic device.Due to this electronics
Containing previously described semiconductor structure in device, therefore this electronic device has the whole special of previously described semiconductor structure
Levy and advantage, do not repeat them here.In simple terms, this electronic device have preparation method easy, with low cost, without
The advantages such as high equipment.Further, the semiconductor structure of this electronic device has the nitride containing crystal preferred orientation half
Conductor layer, such that it is able to improve the integral device performance of this electronic device.It should be noted that in the present invention, electronics device
The concrete kind of part is not particularly limited, and those skilled in the art can select according to the particular make-up in semiconductor structure.
Such as, in the second nitride semiconductor layer containing nitride multilayer thing SQW (include GaN/InGaN/GaN,
AlGaN/InGaN/AlGaN etc.) time, both can be applied to LED structure as luminescent material can also be as light absorbing zone
It is applied to solaode.
Below by specific embodiment, the present invention will be described, it should be noted that following specific embodiment is only to use
In descriptive purpose, and limit the scope of the present invention never in any form, it addition, if no special instructions, the most specifically record
The method of condition or step is conventional method, and the reagent and the material that are used the most commercially obtain.Wherein, raw
Long equipment uses as LAB18 magnetic control sputtering device.
Embodiment 1: quartz glass Grown AlN the first nitride semiconductor layer
Using quartz glass is sputtering target material as substrate, Al, deposits in a nitrogen atmosphere.In advance to lining before deposition
The end, is carried out.
Strobe pulse magnetron sputtering, sputtering power 300W, the dutycycle of the pulse power is 0.05, vacuum 1E-7Torr, spatters
Penetrate Ar Pressure 10mtorr, underlayer temperature 450 degrees Celsius, control about speed of growth 30nm/h.Obtain nitride-based semiconductor
Layer thickness is 30nm.Subsequently, the thin film obtaining sputtering carries out making annealing treatment under blanket of nitrogen, annealing temperature 1000 degrees Celsius,
Annealing time 2 hours.
By showing the XRD analysis of the AlN obtained, the halfwidth at its (0002) peak is 0.5 degree, illustrates that AlN has
There is preferable crystal preferred orientation.
Embodiment 2: quartz glass Grown AlN the first nitride semiconductor layer and GaN the second nitride-based semiconductor
Layer
The step of growing AIN the first nitride semiconductor layer with embodiment 1, except that, utilize sputtering acquisition first
After nitride semiconductor layer, continuing with pulsed magnetron sputtering technique, GaN is sputtering target material, enters in a nitrogen atmosphere
Row deposition.Sputtering power 300W, the dutycycle of the pulse power is 0.05, vacuum 1E-7Torr, Sputtering Ar Pressure 10mtorr,
Underlayer temperature 600 degrees Celsius, controls about speed of growth 30nm/h.Obtaining nitride semiconductor layer thickness is 30nm.With
After, the thin film obtaining sputtering carries out making annealing treatment under blanket of nitrogen, annealing temperature 800 degrees Celsius, annealing time 2 hours.
By showing the XRD analysis of the GaN obtained, the halfwidth at its (0002) peak is 1.2 degree, illustrates that GaN has
There is preferable crystal preferred orientation.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " concrete example ",
Or specific features, structure, material or the feature bag that the description of " some examples " etc. means to combine this embodiment or example describes
It is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term necessarily
It is directed to identical embodiment or example.And, the specific features of description, structure, material or feature can be arbitrary
Individual or multiple embodiment or example combine in an appropriate manner.Additionally, in the case of the most conflicting, the skill of this area
The feature of the different embodiments described in this specification or example and different embodiment or example can be combined by art personnel
And combination.
Additionally, in the present invention, term " first ", " second " are only used for describing purpose, and it is not intended that indicate or dark
Show relative importance or the implicit quantity indicating indicated technical characteristic.Thus, " first ", " second " are defined
Feature can express or implicitly include at least one this feature.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is exemplary,
Being not considered as limiting the invention, those of ordinary skill in the art within the scope of the invention can be to above-described embodiment
It is changed, revises, replaces and modification.
Claims (16)
1. the method preparing semiconductor structure, it is characterised in that including:
(1) providing substrate, described substrate is formed by glass；And
(2) upper surface at described substrate passes through sputtering sedimentation, forms the first nitride semiconductor layer, in order to obtain described half
Conductor structure,
Wherein, described first nitride semiconductor layer has crystal preferred orientation.
Method the most according to claim 1, it is characterised in that step (2) farther includes:
Form nitride mixture by sputtering sedimentation at the upper surface of described substrate, described nitride mixture is carried out first
Annealing, in order to obtain described first nitride semiconductor layer.
Method the most according to claim 1, it is characterised in that farther include；
(3) described first nitride semiconductor layer away from described substrate side formed the second nitride semiconductor layer, institute
State the second nitride semiconductor layer and there is crystal preferred orientation.
Method the most according to claim 3, it is characterised in that farther include；
(4) described substrate, described first nitride semiconductor layer and described second nitride semiconductor layer are carried out second to move back
Fire processes.
Method the most according to claim 1, it is characterised in that described first nitride semiconductor layer contain AlN, GaN,
At least one AlGaN and InGaN.
Method the most according to claim 3, it is characterised in that described second nitride semiconductor layer contain AlN, GaN,
At least one AlGaN and InGaN, described second nitride semiconductor layer composition and described first nitride semiconductor layer
Composition differ.
7. according to the method described in any one of claim 1-4, it is characterised in that described sputtering sedimentation is magnetron sputtering deposition
Or ion beam sputter depositing；
Optionally, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition；
Optionally, the sputter rate of described sputtering sedimentation is less than 100nm/ hour.
8. the method stated according to claim 4, it is characterised in that described first annealing and described second annealing
Temperature be separately 600～1200 degrees Celsius.
9. according to the method described in any one of claim 1-4, it is characterised in that in step (2), described sputtering sedimentation
Time underlayer temperature not less than 300 degrees Celsius.
10. a semiconductor structure, it is characterised in that including:
Substrate, described substrate is formed by glass；With
First nitride semiconductor layer, described first nitride semiconductor layer is formed at the upper surface of described substrate and has crystal
Preferred orientation.
11. semiconductor structures according to claim 10, it is characterised in that described first nitride semiconductor layer (0002)
The halfwidth of the XRD diffraction maximum of crystal face is less than 5 degree.
12. semiconductor structures according to claim 10, it is characterised in that described first nitride semiconductor layer contains
At least one AlN, GaN, AlGaN and InGaN.
13. semiconductor structures according to claim 10, it is characterised in that described semiconductor structure farther includes:
Second nitride semiconductor layer, described second nitride semiconductor layer is formed at described first nitride semiconductor layer away from described
The side of substrate；
Optionally, described second nitride semiconductor layer contain AlN, GaN, AlGaN and InGaN at least one,
Described second nitride semiconductor layer composition differs with the composition of described first nitride semiconductor layer.
14. semiconductor structures according to claim 12, it is characterised in that described first nitride semiconductor layer is logical
Cross what sputtering sedimentation was formed.
15. semiconductor structures according to claim 13, it is characterised in that described first nitride semiconductor layer and
Second nitride semiconductor layer at least one by sputtering sedimentation and annealing formed.
16. according to the semiconductor structure described in claims 14 or 15, it is characterised in that described sputtering sedimentation is that magnetic control spatters
Penetrate deposition or ion beam sputter depositing；
Optionally, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition；
Optionally, during described sputtering sedimentation, underlayer temperature is more than 300 degrees Celsius；
Optionally, the sputter rate of described sputtering sedimentation is less than 100nm/ hour.
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